Switch Patents (Class 333/262)
  • Patent number: 10784066
    Abstract: A microelectromechanical switch having improved isolation and insertion loss characteristics and reduced liability for stiction. The switch includes a signal line having an input port and an output port between first and second ground planes. The switch also includes a beam for controlling activation of the switch. In some embodiments, the switch further includes one or more defected ground structures formed in the first and second ground planes, and a corresponding secondary deflectable beam positioned over each defected ground structure. In some embodiments, the switch includes a metamaterial structure for generating a repulsive Casimir force.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: September 22, 2020
    Assignee: Synergy Microwave Corporation
    Inventors: Shiban K. Koul, Ajay Kumar Poddar, Ulrich L. Rohde
  • Patent number: 10584026
    Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
    Type: Grant
    Filed: May 8, 2018
    Date of Patent: March 10, 2020
    Assignee: International Business Machines Corporation
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Patent number: 10315913
    Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: June 11, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Patent number: 10308501
    Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: June 4, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Patent number: 10277188
    Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: April 30, 2019
    Assignee: SMARTSENS TECHNOLOGY (CAYMAN) CO., LTD.
    Inventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
  • Patent number: 10193207
    Abstract: The present invention relates to a substrate for supporting an antenna pattern. The substrate includes a porous anodic oxide layer having a plurality of pores formed by anodizing metal. A metallic material is filled in at least a part of the pores.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: January 29, 2019
    Assignee: Point Engineering Co., Ltd.
    Inventors: Bum Mo Ahn, Seung Ho Park, Tae Hwan Song
  • Patent number: 10011477
    Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: July 3, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Patent number: 10011480
    Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: July 3, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Patent number: 9926191
    Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: March 27, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Patent number: 9850127
    Abstract: In some embodiments, a microelectromechanical system may include a semiconductor substrate, a plurality of wiring layers, and a stop. The plurality of wiring layers may be coupled to a first surface of the semiconductor substrate. The stop may be coupled to the plurality of wiring layers. In some embodiments, at least a portion of the plurality of wiring layers between the stop and the first surface of the substrate comprises an insulating material. In some embodiments, at least the portion excludes wiring within. In some embodiments, a volume of the portion may be determined by a use of the microelectromechanical system. In some embodiments, the portion may inhibit, during use, electrical failures adjacent to the stop.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: December 26, 2017
    Assignee: Apple Inc.
    Inventors: Milind S. Bhagavat, Richard Yeh, Henry H. Yang
  • Patent number: 9691723
    Abstract: Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer with a pattern for a first portion of a connector. A first metal layer is plated through the patterned first photoresist layer to form the first portion of the connector which has a first width. A second photoresist layer is formed over the interconnect structure and the first portion of the connector. The second photoresist layer is patterned with a pattern for a second portion of the connector. A second metal layer is plated through the patterned second photoresist layer to form the second portion of the connector over the first portion of the connector. The second portion of the connector has a second width, the second width being less than the first width.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: June 27, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung Wei Cheng, Hai-Ming Chen, Chien-Hsun Lee, Hao-Cheng Hou, Hung-Jen Lin, Chun-Chih Chuang, Ming-Che Liu, Tsung-Ding Wang
  • Patent number: 9660555
    Abstract: The invention provides a MEMS device with enhanced structural strength. The MEMS device includes a plurality of metal layers, including a top metal layer with a plurality of metal segments. The metal segments are individually connected to an adjacent metal layer immediately under the top metal layer through at least one supporting pillar, and there is no dielectric layer between the metal segments and the adjacent metal layer immediately under the top metal layer. The metal layers except the top metal layer are respectively connected to their adjacent metal layers through at least one supporting pillar and a dielectric layer filling in between.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: May 23, 2017
    Assignee: PIXART IMAGING INCORPORATION
    Inventors: Chih-Ming Sun, Ming-Han Tsai, Hsin-Hui Hsu, WeiChung Wang
  • Patent number: 9593007
    Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. A wiring layer is formed on a substrate comprising actuator electrodes and a contact electrode. A MEMS beam is formed above the wiring layer and at least one spring is formed and attached to at least one end of the MEMS beam. At least one spring has a predetermined spring constant based on a coefficient of thermal expansion (CTE) mismatch between materials of the MEMS structure and the spring. Additionally, an array of mini-bumps is formed between the wiring layer and the MEMS beam. A size of a space between fixed actuator electrodes or dummy actuators is determined based on a lateral shift of the MEMS beam.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: March 14, 2017
    Assignee: International Business Machines Corporation
    Inventors: Christopher V. Jahnes, Anthony K. Stamper
  • Patent number: 9565717
    Abstract: Reconfigurable antennas in an ad-hoc network are provided where all nodes employ MIMO/SIMO/MISO communication techniques. Three types of reconfigurable antennas: Reconfigurable Printed Dipole Array (RPDA), Reconfigurable Circular Patch Antenna (RCPA) and Two-Port Reconfigurable CRLH Leaky Wave Antennas are used. The RPDA, RCPA and the CRLH Leaky Wave antennas have a different number of configurations as well as different degrees of pattern diversity between possible configurations. To effectively use these antennas in a network, the performance of centralized and decentralized antenna configuration selection schemes are quantified for reconfiguration at one or both link ends. The sum capacity of the network is used as a metric to quantify the performance of these antennas in measured and simulated network channels.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: February 7, 2017
    Assignees: Drexel University, Politecnico Di Milano
    Inventors: Daniele Piazza, John Kountouriotis, Michele D'Amico, Kapil R. Dandekar, Prathaban Mookiah
  • Patent number: 9550665
    Abstract: A MEMS device includes a bottom plate structure supporting a conductive electrode. A flexible conductive top plate movably supported by a flexure is affixed to a small peripheral portion of the top plate that is aligned with the electrode. Drive circuitry applies a high level of a drive voltage signal between the electrode and the top plate to produce an attracting electrostatic force between the top plate and the electrode sufficient to overcome the flexure and draw the top plate against the electrode. The drive circuitry later applies a low level of the drive voltage signal to remove the electrostatic force and allow the flexure to peel the peripheral portion away from the electrode. Additional drive voltage signals may be applied to additional electrodes to draw additional peripheral portions of the top plate against the additional electrodes and successively removed to allow peripheral portions of the top plate to be sequentially peeled away from the electrodes.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: January 24, 2017
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Paul G. Barker
  • Patent number: 9196429
    Abstract: The present disclosure discloses a contact structure for electromechanical switch. The contact structure is using the design including a PCB and a moving contact to allow the actuations and have great switch characteristics whose range is from DC to high frequency.
    Type: Grant
    Filed: October 8, 2014
    Date of Patent: November 24, 2015
    Assignee: INTAI TECHNOLOGY CORP.
    Inventor: Richard Loon Sun
  • Patent number: 9053874
    Abstract: Miniaturized devices such as MEMS switches (10) have encapsulating enclosures (100). The enclosure (100) and the remainder of the switch (10) are fabricated on a concurrent basis by depositing layers of an electrically-conductive material, such as copper, on a substrate (26).
    Type: Grant
    Filed: September 20, 2012
    Date of Patent: June 9, 2015
    Assignee: Harris Corporation
    Inventors: John E. Rogers, Michael R. Weatherspoon
  • Patent number: 8970323
    Abstract: Implementations are presented herein that include an antenna switch that includes a plurality of ports. A bandstop filter is coupled to at least one of the plurality of ports of the antenna switch and the bandstop filter is configured to attenuate a disturbing frequency. A transistor is configured to receive a control signal and to switch on the bandstop filter responsive to the control signal.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: March 3, 2015
    Assignee: Infineon Technologies AG
    Inventors: Winfried Bakalski, Nikolay Ilkov
  • Patent number: 8907745
    Abstract: Contrary to phase shifters which require complimentary polarity control voltages, a phase shifter may be driven with a single polarity control voltage. The phase shifter comprises an input node in communication with both a high pass network and a low pass network which are both in communication with an output node, where the phase shifter further comprises a first single pole double throw switch and a second single pole double throw switch configured to selectively pass an RF signal from the input node to the output node by way of one of said high pass network and said low pass network. Furthermore, the first and second single pole double throw switches are configured to select between the high pass network and the low pass network based on a single control signal having a voltage greater than or less than a reference voltage.
    Type: Grant
    Filed: July 20, 2011
    Date of Patent: December 9, 2014
    Assignee: ViaSat, Inc.
    Inventors: Christopher D. Grondahl, Donald E. Crockett, III
  • Publication number: 20140340180
    Abstract: An impedance matching switch circuit module includes a first switch device connected to first and second high-frequency input/output terminals, a second switch device connected between the first high-frequency input/output terminal and a first matching terminal, and a third switch device connected between the second high-frequency input/output terminal and a second matching terminal. Impedance matching elements having appropriately set element values (inductances or capacitances) are connected to the first and second high-frequency input/output terminals and the first and second matching terminals, and on/off control is performed for the first, second, and third switch devices.
    Type: Application
    Filed: April 10, 2014
    Publication date: November 20, 2014
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventor: Tadashi WASHIMORI
  • Patent number: 8884726
    Abstract: A contact structure for electromechanical switch includes a static contact and a moving contact to allow many kinds of actuations and provide great switch characteristics, such as high isolation and low insertion loss, for using in the applicable range from DC to high frequency microwave. In the contact structure, there is a gap disposed between the static contact and the moving contact so that the static contact and the moving contact are parallel with each other.
    Type: Grant
    Filed: August 6, 2011
    Date of Patent: November 11, 2014
    Assignee: Intai Technology Corp.
    Inventor: Richard Loon Sun
  • Patent number: 8866363
    Abstract: According to one embodiment, an electrostatic actuator includes a substrate, an electrode unit, a film body unit, and an urging unit. The electrode unit is provided on the substrate. The film body unit is provided to oppose the electrode unit and is conductive. The urging unit is configured to support the film body unit and includes a connection unit connected to the substrate and an elastic unit provided between the connection unit and the film body unit. A contacting state and a separated state are possible for the electrode unit and the film body unit according to a voltage applied to the electrode unit. The elastic unit has a branch portion between one end of the elastic unit connected to the connection unit and multiple one other ends of the elastic unit connected to the film body unit.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: October 21, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Masunaga, Hiroaki Yamazaki
  • Publication number: 20140266517
    Abstract: Provided are radio frequency electromagnetic energy switches and processes of regulating the transmission of RF energy, that for the first time successfully employ a ChG PCM as a RF switching material.
    Type: Application
    Filed: March 12, 2014
    Publication date: September 18, 2014
    Applicant: The Penn State Research Foundation
    Inventors: Douglas H. Werner, Theresa S. Mayer, Peter E. Sieber
  • Patent number: 8760244
    Abstract: A variable resonator includes a first transmission line 101, a second transmission line 102 and a plurality of switch circuits 150. The electrical length of the first transmission line 101 is equal to the electrical length of the second transmission line 102. The characteristic impedance for the even mode of the first transmission line 101 is equal to the characteristic impedance for the even mode of the second transmission line 102. The characteristic impedance for the odd mode of the first transmission line 101 is equal to the characteristic impedance for the odd mode of the second transmission line 102. Each switch circuit 150 is connected to any of the first transmission line 101 and the second transmission line 102, and one of the switch circuits 150 is turned on.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: June 24, 2014
    Assignee: NTT DoCoMo, Inc.
    Inventors: Kunihiro Kawai, Hiroshi Okazaki, Shoichi Narahashi
  • Patent number: 8638159
    Abstract: Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.
    Type: Grant
    Filed: June 18, 2010
    Date of Patent: January 28, 2014
    Assignee: Peregrine Semiconductor Corporation
    Inventors: Tero Tapio Ranta, Shawn Bawell, Robert W. Greene, Christopher N. Brindle, Robert Mark Englekirk
  • Publication number: 20130342289
    Abstract: A parallel capacitor varactor shunt switch device may include a shunt layer, a coplanar waveguide (CPW) layer, and a tunable thin film dielectric layer that is interposed between the shunt layer and the CPW layer. The tunable thin film dielectric layer electrically isolates the shunt layer from the CPW layer. The shunt layer includes a plurality of parallel shunt lines. The CPW layer includes a CPW signal transmission line with two CPW ground lines parallel to the CPW signal transmission line. A plurality of varactor areas equal in number to the plurality of parallel shunt lines are defined in the CPW signal transmission line, each varactor area corresponding to an overlap of the CPW signal transmission line with a respective shunt line and each respective parallel shunt line and its corresponding varactor area defines a capacitor.
    Type: Application
    Filed: June 26, 2012
    Publication date: December 26, 2013
    Applicant: University of Dayton
    Inventor: Guru Subramanyam
  • Patent number: 8506826
    Abstract: A method for manufacturing a micro electro-mechanical system (MEMS) switch system (600, 700) includes etching each of a plurality of base circuit layers (425) and a plurality of passive component substrate layers (412, 418, 42, 426). The method continues with laser milling of a first dielectric film (406) to create a spacer layer (405). A metal cladding (402, 403) formed on a flexible dielectric film layer 404 is etched so as to form a plurality of switch component features. Further laser milling is performed with respect to the flexible dielectric film layer to form at least one switch structure (448, 450). Thereafter, a stack (400) is assembled which is comprised of the spacer layer disposed between the flexible dielectric film layer and the plurality of base circuit layers. Additional layers can also be included in the stack. When the stack is completed, heat and pressure are applied to join the various layers forming the stack.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: August 13, 2013
    Assignee: Harris Corporation
    Inventor: John E. Rogers
  • Patent number: 8482465
    Abstract: Various embodiments provide materials and methods for an optically pumped switch device, an optically pumped reconfigurable antenna system (OPRAS), and their related antenna devices. In one embodiment, the switch devices and the antenna devices can have a photoconductive cell. The photoconductive cell can include a semiconductive substrate that is conductive to reflect a radio frequency (RF) signal in response to an optical signal.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: July 9, 2013
    Assignee: STC.UNM
    Inventors: Sameer D. Hemmady, Ganesh Balakrishnan, Christos G. Christodoulou, Youssef Tawk
  • Patent number: 8441328
    Abstract: An electrostatic switch for high frequency and a method for manufacturing the same are disclosed. The electrostatic switch for high frequency in accordance with an embodiment includes: a first substrate module including a first substrate, an electrode part and a pair of CoPlanar Waveguides (CPWs), the electrode part being installed on the first substrate, the pair of CPWs being formed on either side of the electrode part and guiding an RF signal to travel; and a second substrate module being joined to the first substrate module, the second substrate module including a membrane and a bias line, the membrane being installed on a second substrate and bent by bias voltage supplied to the electrode part and being coupled to the pair of CPWs across an upper area of the electrode part in order to be short-circuited to the electrode part, the bias line being connected to the electrode part.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: May 14, 2013
    Assignee: Mems Solution Inc.
    Inventor: Kwang-Jae Shin
  • Patent number: 8384500
    Abstract: Methods and systems for MEMS switches fabricated in an integrated circuit package are disclosed and may include controlling switching of RF components, and signals handled by the RF components, within an integrated circuit. One or more MEMS switch arrays embedded within a multi-layer package bonded to the integrated circuit may be utilized for the switching and signal control. The RF components and one or more MEMS switch arrays may be integrated in the multi-layer package. The RF components may be electrically coupled to the integrated circuit via the one or more MEMS switch arrays. The MEMS switch arrays may be electrostatically or magnetically activated. The RF components may be coupled to one or more capacitor arrays in the integrated circuit. The RF components may include transformers, inductors, transmission lines, microstrip and/or coplanar waveguide filters and/or surface mount devices. The integrated circuit may be coupled to the multiple-layer package utilizing a flip-chip bonding technique.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: February 26, 2013
    Assignee: Broadcom Corporation
    Inventors: Ahmadreza Rofougaran, Maryam Rofougaran
  • Publication number: 20130021113
    Abstract: Implementations are presented herein that include an antenna switch that includes a plurality of ports. A bandstop filter is coupled to at least one of the plurality of ports of the antenna switch and the bandstop filter is configured to attenuate a disturbing frequency. A transistor is configured to receive a control signal and to switch on the bandstop filter responsive to the control signal.
    Type: Application
    Filed: July 19, 2011
    Publication date: January 24, 2013
    Inventors: Winfried Bakalski, Nikolay Ilkov
  • Patent number: 8306428
    Abstract: An optoelectronic switch using millimeter wavelength (MMW) is provided. An r voltage pulse is applied to a device under test (DUT) for switching the photo-generated MMW power The DUT is operated under reverse bias. An optical light source with modulated MMW envelop is injected on to DUT for MMW power generation. Thus, based on change of the reverse bias, speed is violently changed and the MMW optoelectronic switch is thus obtained.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: November 6, 2012
    Assignee: National Central University
    Inventors: Jin-Wei Shi, Nan-Wei Chen, Feng-Ming Kuo, Hsuan-Ju Tsai
  • Patent number: 8228112
    Abstract: A circuit includes an amplifier having an input and an output; and at least one transistor comprising at least one terminal and at least one isolated well. The input of the amplifier is electrically connected to the at least one terminal of the transistor; and the output of the amplifier is electrically connected to the at least one isolated well of the at least one transistor.
    Type: Grant
    Filed: May 20, 2008
    Date of Patent: July 24, 2012
    Assignee: International Business Machines Corporation
    Inventor: Scott Kevin Reynolds
  • Patent number: 8193868
    Abstract: A switched capacitor circuit for use at at least one operating frequency is provided. The switched capacitor may include an inductive element having a first terminal coupled to a switching voltage and a second terminal. The switched capacitor circuit may further include a hetero-junction bipolar transistor (HBT) having a base terminal coupled to the second terminal of the inductive element, a first conducting terminal, and a second conducting terminal coupled to a voltage supply terminal.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: June 5, 2012
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Vishal P. Trivedi
  • Publication number: 20120119854
    Abstract: A segmented transmission signal circuit is provided with a parallel bus of data transmission. The bus includes a plurality of sections, each section transmits a corresponding parallel data of multiple bits, and the parallel data corresponding to different sections are in different bit orders.
    Type: Application
    Filed: August 2, 2011
    Publication date: May 17, 2012
    Applicant: RAYDIUM SEMICONDUCTOR CORPORATION
    Inventor: Chih-Chuan Huang
  • Patent number: 8174342
    Abstract: The invention relates to microelectromechanical systems (MEMS), and more particularly, to MEMS switches using magnetic actuation. The MEMS switch may be actuated with no internal power consumption. The switch is formed in an integrated solid state MEMS technology. The MEMS switch is micron and/or nanoscale, very reliable and accurate. The MEMS switch can be designed into various architectures, e.g., a cantilever architecture and torsion architecture. The torsion architecture is more efficient than a cantilever architecture.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: May 8, 2012
    Assignee: STMicroelectronics NV
    Inventors: Tang Min, Liao Ebin, Giuseppe Noviello, Francesco Italia
  • Patent number: 8138655
    Abstract: An electrostatic actuator includes first and second lower electrodes formed apart from each other above a substrate, an electrode portion formed above the first and second lower electrodes and first and second upper electrodes, a distance between the first upper electrode and the first lower electrode at a first portion being greater than that at a second portion, a distance between the second upper electrode and the second lower electrode at a third portion being greater than that at a fourth portion, a first boundary portion between the first and third upper electrodes having a convex shape, a second boundary portion between the second and third upper electrodes having a convex shape, and the electrode portion driving the third upper electrode, and first and second layers formed in the first and second boundary portions.
    Type: Grant
    Filed: April 24, 2008
    Date of Patent: March 20, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tamio Ikehashi, Hiroaki Yamazaki
  • Patent number: 8120443
    Abstract: A circulator with at least three ports (p1, p2, p3) comprises two identical electromechanical micro-switches of the series type (MEMS1, MEMS2) formed on the same substrate, a first micro-switch being disposed in order to allow the transmission of a radiofrequency or microwave signal from an input port (p1) to a port (p2) designed to be connected to an antenna, a second micro-switch being disposed in order to allow the signal transmission between the port (p2) designed to be connected to an antenna and said output port. Application to a radiofrequency or microwave telecommunications system.
    Type: Grant
    Filed: May 31, 2007
    Date of Patent: February 21, 2012
    Assignee: Thales
    Inventor: Afshin Ziaei
  • Patent number: 8067810
    Abstract: Systems and methods for controlling a micro electromechanical device using power actuation are disclosed. The disclosed micro electromechanical systems comprise at least one electrostatically actuatable micro electromechanical device and an actuation device. The micro electromechanical device comprises a first conductor and a second conductor having a moveable portion which in use may be attracted by the first conductor as a result of a predetermined actuation power. The actuation device comprises a high frequency signal generator for generating at least part of the actuation power by means of a predetermined high frequency signal with a frequency higher than the mechanical resonance frequency of the moveable portion of the micro electromechanical device.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: November 29, 2011
    Assignee: IMEC
    Inventors: Xavier Rottenberg, Stefan Pauwen
  • Patent number: 8067996
    Abstract: A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device.
    Type: Grant
    Filed: November 14, 2008
    Date of Patent: November 29, 2011
    Assignee: Teledyne Scientific & Imaging, LLC
    Inventors: Christopher E. Hillman, Jeffrey F. De Natale, Jonathan B. Hacker, J. Aiden Higgins, Paul H. Kobrin
  • Patent number: 8058957
    Abstract: According to one embodiment, a first magnetic coupling element is coupled to a first conductive element of a first electrical circuit. A second magnetic coupling element is coupled to a second conductive element of a second electrical circuit. The second magnetic coupling element is operable to attract the first magnetic coupling element using a magnetic force such that electrical contact is made between the first conductive element and the second conductive element.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: November 15, 2011
    Assignee: Raytheon Company
    Inventors: James M. Irion, II, Brian W. Johansen
  • Patent number: 8054147
    Abstract: Electrostatic devices, systems and methods are presented. One embodiment is an electrostatic device including a substrate, a first electrode disposed on the substrate, a movable element having a second electrode and a control electrode. The control electrode is disposed in electrostatic communication with the movable element. The control electrode includes a protection layer having resistivity in a range of from about 1 ohm-cm to about 10 kohm-cm.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: November 8, 2011
    Assignee: General Electric Company
    Inventors: David Cecil Hays, Christopher Fred Keimel, Marco Francesco Aimi
  • Patent number: 8044540
    Abstract: A SPDT or SPMT switch may include a transformer having a primary winding and a secondary winding, where a first end of the secondary winding is connected to a single pole port, where a first end of the primary winding is connected to a first throw port; a first switch having a first end and a second end, where the first end is connected to ground; and a second switch, where a second end of the secondary winding is connected to both a second end of the first switch and a first end of the second switch, where a second end of the second switch is connected to a second throw port, where the first switch controls a first communication path between the single pole port and the first throw port, and where the second switch controls a second communication path between the second throw port and the single pole port.
    Type: Grant
    Filed: September 23, 2009
    Date of Patent: October 25, 2011
    Assignees: Georgia Tech Research Corporation, Samsung Electro-Mechanics
    Inventors: Dong Ho Lee, Minsik Ahn, Kyu Hwan An, Wangmyong Woo, Chang-Ho Lee, Joy Laskar
  • Patent number: 8022794
    Abstract: A micromachine switch switches an electrical connection between signal electrodes in accordance with control signals. The micromachine switch includes a substrate, a rotating body provided on the substrate, and a movable electrode provided on the rotating body. The micromachine switch also includes a first signal electrode, one end of which is electrically connected to one end of the movable electrode, and a second signal electrode provided near the rotating body to be positioned such that a rotation of the rotating body causes the second signal electrode to be electrically connected to another end of the movable electrode. Further, a drive section causes, based on a first control signal, the rotating body to rotate until the movable electrode and the second signal electrode are electrically connected, and causes, based on a second control signal, the rotating body to rotate until the movable electrode and the second signal electrode are disconnected.
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: September 20, 2011
    Assignee: Panasonic Corporation
    Inventors: Hiroshi Nakatsuka, Takehiko Yamakawa, Keiji Onishi
  • Patent number: 7948070
    Abstract: A semiconductor package having an impedance matching device is disclosed, which is especially applicable to conventional system-in-package structures and system packaging design with high-density I/O design. The impedance matching device achieves impedance matching between a semiconductor chip and a signal transmission wiring on the substrate or between different systems integrated in the semiconductor package by employment of a vertical conductive line or combination of a vertical conductive line and a stub transmission line. The vertical conductive line is electrically connected with the signal transmission wiring on the substrate at one end thereof, and the stub transmission line may be further connected to the other end of the vertical conductive line. This impedance matching device helps to effectively reduce the wiring area of an impedance matching network of the semiconductor package and enhance the flexibility and interchangeability in layout of the wiring.
    Type: Grant
    Filed: February 13, 2008
    Date of Patent: May 24, 2011
    Assignee: Advanced Semiconductor Engineering, Inc.
    Inventors: Tseng-ying Chuang, Pao-nan Li
  • Patent number: 7928817
    Abstract: A switch circuit in which the cut-off characteristic is improved over a wide range of frequencies in the microwave band includes a first field-effect transistor functioning as a switch element, a second field-effect transistor and an inductor. A serially connected circuit composed of the inductor and second field-effect transistor is connected in parallel with the first field-effect transistor across the source and drain thereof. The second field-effect transistor is turned on when the first field-effect transistor operates normally and is turned off when the first field-effect transistor is inspected.
    Type: Grant
    Filed: August 18, 2008
    Date of Patent: April 19, 2011
    Assignee: Renesas Electronics Corporation
    Inventor: Takao Atsumo
  • Patent number: 7919903
    Abstract: A Micro Electro Mechanical System (MEMS) switch includes a substrate, a fixed signal line formed on the substrate, a movable signal line spaced apart from one of an upper surface and a lower surface of the fixed signal line, and at least one piezoelectric actuator connected to a first end of the movable signal line so as to bring or separate the movable signal line in contact with or from the fixed signal line. The piezoelectric actuator includes a first electrode, a piezoelectric layer formed on the first electrode, a second electrode formed on the piezoelectric layer, and a connecting layer formed on the second electrode and connected with the movable signal line.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: April 5, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-tack Hong, Dong-kyun Kim, In-sang Song, Sang-hun Lee, Sang-wook Kwon, Jong-seok Kim, Che-heung Kim
  • Patent number: 7898371
    Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: March 1, 2011
    Assignee: Intel Corporation
    Inventors: Hanan Bar, Tsung-Kuan Allen Chou
  • Patent number: 7859360
    Abstract: Methods and systems for controlling MEMS switches in an integrated circuit package are disclosed and may include controlling one or more arrays of MEMS switches utilizing a control chip. The arrays of MEMS switches and one or more circuit components may be integrated in and/or on a multi-layer package. The control chip may be bonded to the multi-layer package. The circuit components may be coupled to the arrays of MEMS switches via electrical traces embedded in and/or deposited on the multi-layer package. The control chip may be flip-chip bonded to the multi-layer package. The MEMS switches may be actuated electrostatically or magnetically. The circuit components may include integrated circuits, inductors, capacitors, surface mount devices, and/or transformers.
    Type: Grant
    Filed: December 13, 2007
    Date of Patent: December 28, 2010
    Assignee: Broadcom Corporation
    Inventors: Ahmadreza Rofougaran, Maryam Rofougaran
  • Patent number: RE45704
    Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.
    Type: Grant
    Filed: January 17, 2006
    Date of Patent: September 29, 2015
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Robert B. Stokes, Alvin M. Kong