Resistance Element And/or Terminals Printed Or Marked On Base Patents (Class 338/307)
  • Patent number: 5521576
    Abstract: Electrical resistors and resistor networks are provided on an insulative substrate with designated conductive terminations by direct and continuous writing of resistive lines in fine-line patterns between and over each two of neighboring terminations from heterogeneous resistive thick film compositions. The resistive lines of line width w and total length l between conductive terminations can be directly written by suitable writing apparatus to have a high aspect ratio n=l/w, thereby providing resistors and resistor networks of high resistance values on an overall substrate area significantly smaller than required for conventional thick film resistors of comparable resistance value and comparable operational characteristics.
    Type: Grant
    Filed: October 6, 1993
    Date of Patent: May 28, 1996
    Inventor: Franklyn M. Collins
  • Patent number: 5485138
    Abstract: An inverted thin film resistor structure comprises a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads (e.g. Al 36) overlaying a supporting layer (e.g. SiO.sub.2 32), an interlevel dielectric layer (e.g. SiO.sub.2 40) overlaying the supporting layer, and planarized so as to expose a top contact portion of the metallic interconnect leads, and an inverted thin film resistor (e.g. TaN 44) overlaying a portion of the planarized interlevel dielectric layer and overlaying the exposed top contact portions of the metallic interconnect leads. The novel inverted thin film resistor structure does not require a protective metal layer and does not require any vias in direct contact with the resistor. In addition, both the thin film resistor and the metallic interconnect can be formed with pattern and etch techniques.
    Type: Grant
    Filed: June 9, 1994
    Date of Patent: January 16, 1996
    Assignee: Texas Instruments Incorporated
    Inventor: Frank J. Morris
  • Patent number: 5469131
    Abstract: A resistive body of a hybrid integrated circuit has a resistance pattern on a resin film. Bonding pads permit connection of current through the resistance pattern. The resistance pattern may form part of a detecting bridge for overcurrent detection. One embodiment of the invention uses a rectangular resistance pattern with an opening in the center to force current to flow on a perimeter path for minimizing maximum temperature. Another embodiment uses a serpentine resistance pattern. A face-down resistance patter reduces interference. A direct-connection bonding pad reduces the voltage generated in a parasitic capacitance to improve the resistance of the resin film to voltage breakdown.
    Type: Grant
    Filed: August 30, 1993
    Date of Patent: November 21, 1995
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Ryoichi Takahashi, Katsumi Okawa, Yusuke Igarashi
  • Patent number: 5464966
    Abstract: A design and fabrication methodology, for silicon micromachined micro-hotplates which are manufactured using commercial CMOS foundries techniques with additional post-fabrication processing. The micro-hotplates are adaptable for a host of applications. The methodology for the fabrication of the micro-hotplates is based on commercial CMOS compatible micromachining techniques. The novel aspects of the micro-hotplates are in the design, choice and layout of the materials layers, and the applications for the devices. The micro-hotplates have advantages over other similar devices in the manufacture by a standard CMOS process which include low-cost and easy integration of VLSI circuits for drive, communication, and control. The micro-hotplates can be easily incorporated into arrays of micro-hotplates each with individualized circuits for control and sensing for independent operation.
    Type: Grant
    Filed: October 26, 1992
    Date of Patent: November 7, 1995
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventors: Michael Gaitan, John S. Suehle, Stephen Semancik, Richard E. Cavicchi
  • Patent number: 5451920
    Abstract: A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.
    Type: Grant
    Filed: December 20, 1993
    Date of Patent: September 19, 1995
    Assignee: Martin Marietta Energy Systems, Inc.
    Inventors: Barbara S. Hoffheins, Robert J. Lauf
  • Patent number: 5451748
    Abstract: In an oxygen sensor of the type having an oxygen ion conductive tube of solid electrolyte, a ceramic heater disposed within the oxygen ion conductive tube for heating the same is in the form of a quadrangular prism or a bar of a rectangular cross section. The ceramic heater is formed by piling up ceramic green sheets with metallic thick-film patterns for heat generating resistors interposed between adjacent two of the ceramic green sheets. The ceramic heater is so shaped as to satisfy the relation of b/a=0.75.about.1 where "a" is the width and "b" is the thickness of the ceramic heater. The metallic thick films, which the metallic thick-film patterns are turned to by firing, are arranged so as to be parallel to the side surfaces opposed in the thickness direction of the ceramic heater.
    Type: Grant
    Filed: July 22, 1994
    Date of Patent: September 19, 1995
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Hiroshi Matsuzaki, Yoshiaki Kuroki, Takao Kojima
  • Patent number: 5446437
    Abstract: An improved temperature sensor is designed for the sensitive detection of temperature changes. The temperature sensor includes a frame 9 of monocrystalline silicon and a dielectric diaphragm 13 stretched on it. A monocrystalline silicon structure 35 is disposed on or under the dielectric diaphragm which is used for measuring the temperature. In the course of this, the Seebeck effect, as well as the temperature dependence of the electrical resistance, can be used for detection of any temperature changes.
    Type: Grant
    Filed: December 30, 1992
    Date of Patent: August 29, 1995
    Assignee: Robert Bosch GmbH
    Inventors: Frank Bantien, Eckart Reihlen
  • Patent number: 5414404
    Abstract: A manufacturing method for a thin film resistor is disclosed. An insulating layer is formed on a substrate having a contact region. The insulating layer above the contact region is removed by etching to expose the contact region. A metal layer and an interlayer are then formed in sequence on the surface of the structure. The metal layer and the interlayer above the region where the resistor will be formed is next removed, and then a resistor layer is formed on the surface of the structure. The thin film resistor is completed by etching away the resistor layer except for the predetermined region where the resistor is to be formed.
    Type: Grant
    Filed: February 19, 1993
    Date of Patent: May 9, 1995
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang B. Jeong, Chang S. Song
  • Patent number: 5406246
    Abstract: A positive temperature coefficient temperature sensor for use in exhaust-gas systems of internal-combustion engines includes a sensor element having a multilayer laminate composite structure with a positive temperature coefficient thermistor, formed by at least two resistor tracks arranged one above another and electrically insulated from one another. One of the layers of the multilayer structure is an insulating ceramic base film, and a first one of the at least two resistor tracks, with a supply lead, is printed onto the insulating ceramic base film. A second one of the at least two resistor tracks is disposed separately on the insulating ceramic base film by means of at least one insulating layer printed above the first one of the at least two resistor tracks. The at least two resistor tracks disposed one above another are connected by a land guided through the at least one insulating layer.
    Type: Grant
    Filed: February 12, 1993
    Date of Patent: April 11, 1995
    Assignee: Robert Bosch GmbH
    Inventors: Karl-Hermann Friese, Harald Neumann
  • Patent number: 5367283
    Abstract: A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.
    Type: Grant
    Filed: October 6, 1992
    Date of Patent: November 22, 1994
    Assignee: Martin Marietta Energy Systems, Inc.
    Inventors: Robert J. Lauf, Barbara S. Hoffheins, Pamela H. Fleming
  • Patent number: 5367284
    Abstract: An inverted thin film resistor structure comprises a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads (e.g. Al 36) overlaying a supporting layer (e.g. SiO.sub.2 32), an interlevel dielectric layer (e.g. SiO.sub.2 40) overlaying the supporting layer, and planarized so as to expose a top contact portion of the metallic interconnect leads, and an inverted thin film resistor (e.g. TaN 44) overlaying a portion of the planarized interlevel dielectric layer and overlaying the exposed top contact portion of the metallic interconnect leads. The novel inverted thin film resistor structure does not require a protective metal layer and does not require any vias in direct contact with the resistor. In addition, both the thin film resistor and the metallic interconnect can be formed with pattern and etch techniques.
    Type: Grant
    Filed: May 10, 1993
    Date of Patent: November 22, 1994
    Assignee: Texas Instruments Incorporated
    Inventor: Frank J. Morris
  • Patent number: 5360140
    Abstract: A double sided primed circuit board is shown wherein one side is etched for receiving a plurality of surface mounted components constituting a control circuit. In one embodiment the control circuit provides for regulating the operation of a plurality to the beverage dispensing valves. An op-amp monitors the conductor for sensing the operation of the beverage dispensing valves as a function of a voltage drop there across. The conductor operates as a resistor, and any heating thereof that occurs as a result of the operation of the beverage dispensing valves is dissipated over the entire surface area of the circuit board. The control circuit also operates a dump valve for periodically dumping beverage if any of the valves have not been operated for a set period of time. The control circuit deactivates the operation of the dump valve during any sensed operation of one of the beverage dispense valves.
    Type: Grant
    Filed: August 10, 1992
    Date of Patent: November 1, 1994
    Assignee: The Cornelius Company
    Inventor: Karl A. Senghaas
  • Patent number: 5349325
    Abstract: The material to be used in a semiconductor resistor is produced by successively depositing multiple layers of substantially intrinsic polycrystalline semiconductor material. The deposition process is stopped between layers to create an interruption of the polycrystalline structure of the semiconductor material. This interruption reduces the modulation experienced by the resistor when it is located above an underlying conductor in a semiconductor circuit. Such a configuration typically exists in a memory cell where the load resistor of a field-effect transistor is located over the gate of the transistor.
    Type: Grant
    Filed: May 18, 1993
    Date of Patent: September 20, 1994
    Assignee: Integrated Device Technology, Inc.
    Inventor: Kenneth McAllister
  • Patent number: 5345213
    Abstract: Planar forms of chemically-sensitive materials have been combined, under temperature control, with the pixels of a specially-designed micro-hotplate array to produce a miniature device capable of analyzing chemical mixtures. The device uses integrated multiple elements having different adsorption properties and temperatures to collectively achieve chemical selectivity in sensing. The method of making and using selectively in sensing. The device of the present invention is manufactured by standard CMOS foundry techniques which allow the production of a range of devices that have improved sensing performance.
    Type: Grant
    Filed: October 26, 1992
    Date of Patent: September 6, 1994
    Assignee: The United States of America, as represented by the Secretary of Commerce
    Inventors: Stephen Semancik, Richard E. Cavicchi, Michael Gaitan, John S. Suehle
  • Patent number: 5339066
    Abstract: A resistor bank consisting of a group of resistors formed on the surface of die, all electrically connected together in parallel. All of the resistors have identical individual resistances, but each has a unique energy dissipating capacity. When an event subjects the resistor bank to a surge of current, some of the resistors blow out, thereby changing the resistance of the bank. By measuring the resistance of the bank before and after an event the energy of the surge can be determined.
    Type: Grant
    Filed: March 30, 1993
    Date of Patent: August 16, 1994
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Anthony M. Marques, Paul R. Kelley, William K. Jones, Masatoshi Fukuda, Overton H. Manuel
  • Patent number: 5323138
    Abstract: A thin film resistor with an insulating layer disposed between a substrate material and a resistor material is disclosed. Also, disclosed is a technique for fabricating this thin film resistor. In accordance with the preferred embodiment, the thin film resistor employs an insulating layer of silicon nitride with a thickness of 2000 .ANG.. The insulating layer prevents the resistor layer from diffusing into the substrate material which, in turn, significantly reduces variations in the resistor value during accelerated life testing. Compared to thin film resistors with a resistor layer evaporated directly upon a substrate material, reliability is increased from a few hundred hours up to thousands of hours. Also, the maximum current handling capability is increased by greater than one order of magnitude, which results in a thin film resistor which requires less surface area of a wafer.
    Type: Grant
    Filed: September 4, 1992
    Date of Patent: June 21, 1994
    Assignee: TRW Inc.
    Inventors: Aaron K. Oki, Donald K. Umemoto, Frank M. Yamada, Dwight C. Streit
  • Patent number: 5304784
    Abstract: A heater for heating a moving sheet material by contact therewith is used, for example, in electrophotographic apparatus for fixing toner to printing paper. The heater comprises an insulating substrate formed with a striplike heating element on its upper surface, and a support plate for supporting the substrate. A higher heat preserving property is given to the opposite end portions of the heating element than to a longitudinal intermediate portion thereof to thereby compensate for a temperature reduction at the element end portions and make the heating element uniform in temperature over the entire length thereof.
    Type: Grant
    Filed: December 23, 1992
    Date of Patent: April 19, 1994
    Assignee: Rohm Co., Ltd.
    Inventors: Fumiaki Tagashira, Shigeo Ota, Shinya Yukawa, Shingo Ooyama
  • Patent number: 5291179
    Abstract: A printed circuit board includes a wiring pattern formed on an insulating board according to a predetermined electric circuit, and a cover member covering a portion of the wiring pattern used as a contact, the cover member being formed of an electrically conductive and non-solderable material. Due to the presence of the covering member, the wiring pattern portion is not covered with solder when the printed circuit board is subjected to dip soldering to attach various electric components to the printed circuit board. Since the covering member is electrically conductive, the wiring pattern portion can readily be used as a contact when the dip soldering is completed.
    Type: Grant
    Filed: May 20, 1992
    Date of Patent: March 1, 1994
    Assignee: West Electric Company, Ltd.
    Inventors: Isao Ooe, Hisashi Ogura
  • Patent number: 5287082
    Abstract: A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.
    Type: Grant
    Filed: July 2, 1992
    Date of Patent: February 15, 1994
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Susanne C. Arney, Noel C. MacDonald, Jun J. Yao
  • Patent number: 5287081
    Abstract: Multilayer, thin film multijunction integrated micropotentiometers are formed in an integral multifilm membrane form over a through opening in a nonmagnetic, dielectric substrate. Through the use of conventional photolithographic and etching techniques, integrated structures are formed to include either single elongate heater elements, bifilar heater elements, or trifilar heater elements with multiple return paths. Multijunction thermopiles and resistors are formed with the heater. The individual layers of silicon oxide or silicon nitride, are formed with conventional chemical vapor deposition, sputtering and other known techniques.
    Type: Grant
    Filed: January 13, 1993
    Date of Patent: February 15, 1994
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventors: Joseph R. Kinard, De-xiang Huang, Donald B. Novotny
  • Patent number: 5285049
    Abstract: A heater comprises an insulating substrate which carries a pair of transversely conductor strips, a resistor line extending between the respective conductor strips. The respective conductor strips are connected to the resistor line by electrode teeth spaced longitudinally of the main resistor line and arranged in staggered relation on both sides of the resistor line.
    Type: Grant
    Filed: June 18, 1992
    Date of Patent: February 8, 1994
    Assignee: Rohm Co., Ltd.
    Inventors: Hiroshi Fukumoto, Shigeo Ota, Fumiaki Tagashira, Shingo Ooyama
  • Patent number: 5276423
    Abstract: A layer of ceramic material such as alumina is plasma-deposited on a sheet member such as molybdenum or a composite laminate of molybdenum and graphite or other material of low thermal expansion to form a circuit unit substrate having a thick, adherent, electrically-insulating coating on a light, rigid and thermally-conducting base. Thick and thin film materials are deposited and fired on the insulating coating to provide conductors, insulators or resistors or the like in a circuit unit. The materials of the sheet member and of the insulating coating are selected to have matching thermal expansion coefficients so that the substrate remains flat and free of bowing during the firing of the thick and thin film materials. The plasma-deposited electrically-insulating layer is sealed to prevent moisture absorption during use.
    Type: Grant
    Filed: November 12, 1991
    Date of Patent: January 4, 1994
    Assignee: Texas Instruments Incorporated
    Inventors: Henry F. Breit, James A. Forster
  • Patent number: 5274351
    Abstract: The present invention relates to a resistance unit for controlling a motor speed of driving a blower of an automobile air conditioner. The resistance unit includes a resistance circuit board printing a plurality of resistors in the form of double layers on both sides thereof, a supporting plate for mounting the board and a plurality of lead frames each of which is electrically connected to a corresponding terminal of the resistors, and a socket, combined with the supporting plate, taking a part of each lead frame therein.
    Type: Grant
    Filed: May 5, 1992
    Date of Patent: December 28, 1993
    Inventor: Woo Y. Lee
  • Patent number: 5274352
    Abstract: A thick film resistive element superior in moisture resistance characteristic is provided, which includes a pair of film-like conductors formed on an insulating substrate, a film-like resistor formed on the substrate so as to be partially laminated on the electrode portions of the pair of conductors thereby covering the surfaces of the electrode portions, and a first covering member formed of a material containing a crystal glass as a main ingredient thereof which covers the other portions of the pair of conductors than said electrode portions. As a result, there does not exist such an area that is covered with a porous amorphous glass film only, so that even if a protection film of an organic resin is not provided, there is no possibility that the moisture in the application environment affects on the conductors to degrade the insulation resistance therebetween.
    Type: Grant
    Filed: June 22, 1992
    Date of Patent: December 28, 1993
    Assignee: NEC Corporation
    Inventors: Toshiaki Nishikawa, Yoshiharu Yamashita
  • Patent number: 5258738
    Abstract: An SMD-resistor includes a ceramic substrate having two main faces, two side faces and two end faces which are intergranular fracture faces, two contact layers provided on two ends of a main face adjoining the end faces, a resistive layer situated on this main face and electrically contacting both contact layers are two end contacts, covering both end faces and electrically contacting the contact layers.
    Type: Grant
    Filed: April 7, 1992
    Date of Patent: November 2, 1993
    Assignee: U.S. Philips Corporation
    Inventor: Bralt R. Schat
  • Patent number: 5257005
    Abstract: The effective parasitic end resistance of small-value precision integrated circuit resistors is reduced by providing N resistors connected in parallel and causing at least two of the resistors to share a terminal contact. The resulting integrated circuit resistor includes multiple terminal contacts of any number n greater than two. Of the n terminal contacts, N-1 terminal contacts are shared amongst said resistors. The parasitic end resistances are diminished by a factor equal to the number of resistors connected in parallel. By increasing the length of the active area of the N resistors by a factor equal to the number of the resistors, the desired resistance value remains undiminished. As a result, the parasitic end resistances may be made negligible compared to the desired resistance even for small value resistors.
    Type: Grant
    Filed: August 18, 1992
    Date of Patent: October 26, 1993
    Inventors: Alan R. Desroches, Domingo A. Figueredo
  • Patent number: 5242722
    Abstract: This is to introduce a strain sensor of high quality and excellent durability. This strain sensor is composed of a basic metal body, a crystallized glass layer formed over the surface of the basic metal body, and a resistance element that changes its resistance value by strain changes and is built on the glass layer surface. By this structure, where the crystallized glass layer fired at a high temperature is employed, both of the composition, the basic metal body and the glass layer, are fused with each other at the boundary plane, making their adhesion very strong. No peeling between the basic metal body and the glass layer will take place even under the severe environmental conditions such as high temperature and heavy load.
    Type: Grant
    Filed: October 29, 1991
    Date of Patent: September 7, 1993
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masahiro Hiraka, Haruhiko Handa, Masaki Ikeda, Akihiko Yoshida, Yoshihiro Watanabe, Masahiro Kawamura
  • Patent number: 5235312
    Abstract: A semiconductor processing method of forming a resistor device includes, a) providing a layer of conductively doped polysilicon atop a substrate to a selected thickness, the layer of polysilicon having an upper surface and a base, the layer of polysilicon having grain boundaries therewithin which extend from the upper surface to the base and define polysilicon grains; b) oxidizing the polysilicon layer at a temperature from about 850.degree. C. to about 1050.degree. C. for a selected period of time to form SiO.sub.x within the polysilicon layer along the grain boundaries and down to the base to separate individual grains of polysilicon within the layer; and c) patterning the oxidized polysilicon layer to form a resistor device within an integrated circuit.
    Type: Grant
    Filed: November 18, 1991
    Date of Patent: August 10, 1993
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Pierre C. Fazan
  • Patent number: 5216404
    Abstract: A thin-film thermistor element which has an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, and a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from the body portion. The electrode films are formed by the use of a firing process on the first surface of the substrate with the respective comb-shaped portions thereof confronting with each other. First and second electroconductive films are also formed on respective surrounding wall faces defining the corresponding through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films. A temperature sensitive resistance film is formed by the use of a high frequency sputtering process on the first surface of the substrate so as to overlay the electrode films.
    Type: Grant
    Filed: July 23, 1991
    Date of Patent: June 1, 1993
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takeshi Nagai, Shuji Itou, Kunihiro Tsuruda
  • Patent number: 5206623
    Abstract: An electrical resistor which is fabricated from traces of resistive material on a substrate of insulating material. The traces are interconnected electrically in series by first links and in parallel by second alternating links, which are connected to different terminals on the substrate. The second links are cut, preferably by laser trimming, so as to select the value of resistance of the resistor by reducing the number of traces connected in parallel and increasing the number of traces connected in series. Where the resistance of each trace is "R", the value of the resistance is adjustable by severing the second links from R/n to nR, where n is the number of traces.
    Type: Grant
    Filed: May 2, 1991
    Date of Patent: April 27, 1993
    Assignee: Vishay Intertechnology, Inc.
    Inventors: Michel Rochette, Paul R. Simon
  • Patent number: 5200733
    Abstract: A resistor in an integrated circuit having a conductive shield layer between the resistor and an insulative layer. The contacts of the resistor may also contact the conductive shield layer. The shield layer may be formed during a single or double level polysilicon bipolar transistor fabrication process.
    Type: Grant
    Filed: October 1, 1991
    Date of Patent: April 6, 1993
    Assignee: Harris Semiconductor Corporation
    Inventors: Christopher K. Davis, Thomas L. Carndell
  • Patent number: 5197329
    Abstract: A PTC resistive strip is mounted on a wall of a washer tub. Water in the tub carries away heat from the energized strip thereby reducing its resistance. The water level in the tub is measured by measuring the voltage drop across the strip. The resistance of the strip can be compared to the resistance across a variable resistance or resistor to indicate that the water has reached a desired level. A comparator output can be used to control the water level and washer motor operation via a control circuit which operates the water supply valves and motor switch. A second PTC resistive element is also provided for sensing overfill.
    Type: Grant
    Filed: May 22, 1992
    Date of Patent: March 30, 1993
    Assignee: White Consolidated Industries, Inc.
    Inventor: Andrew G. Grundy
  • Patent number: 5177341
    Abstract: In a thick film water track, irrespective of track thickness or the material of which the track is constructed, the optimum track width is found to be in the range of from 1.2 mm to 2.1 mm. Further, for a given resistance, the track is longer and may be conformed to a pattern to give improved temperature distribution. Additionally disclosed is a heating element having a number of thick film electrically resistive tracks applied to the surface of an electrically insulative substrate and a switch for selectively connecting one or more of the tracks to a power supply. The resistance and hence the operating temperature of the heating element may be varied by changing the track or tracks connected to the switch.
    Type: Grant
    Filed: February 24, 1988
    Date of Patent: January 5, 1993
    Assignee: Thorn EMI plc
    Inventor: Simon Balderson
  • Patent number: 5164699
    Abstract: Via resistor structures in a hybrid multilayer circuit having a plurality of insulating layers. One via resistor structure includes a plurality of resistive via fills in vias in respective adjacent insulating layers, a plurality of conductive elements for electrically contacting predetermined tops and bottoms of the resistive via fills, and conductive via fills for providing external electrical connection to selected ones of the conductive elements at locations on the outside the unitized multilayer circuit structure. A further via resistor structure includes a resistive via fill formed in a via in one of the insulating layers, and one or more thermally conductive via fills for thermally conducting heat from said resistive via fill to the outside of the unitized multilayer circuit structure.
    Type: Grant
    Filed: December 17, 1990
    Date of Patent: November 17, 1992
    Assignee: Hughes Aircraft Company
    Inventors: Hal D. Smith, Robert F. McClanahan, Andrew A. Shapiro, Raymond Brown
  • Patent number: 5164698
    Abstract: A printed circuit board includes both high and low resistive value thick film resistors interconnected by a copper film. To lower the contact resistance to the thick film resistors of high value, each is provided at its ends with a termination of a composition similar to that used for the low value resistors. This provides a relatively low resistance contact region which overcomes the difficulty that a copper thick film conductor has in making electrical connections to compositions generally used for making high value thick film resistors. The composition of high and low resistivities are adapted to permit firing of both compositions in a single firing step.
    Type: Grant
    Filed: July 1, 1991
    Date of Patent: November 17, 1992
    Assignee: Delco Electronics Corporation
    Inventor: Ponnusamy Palanisamy
  • Patent number: 5139858
    Abstract: R.F. sputtered nickel in silica films containing 64 to 70 atomic percent nickel are employed as electrical resistance elements in a resistance thermometer for measuring temperatures of 50.degree. K and less.
    Type: Grant
    Filed: November 5, 1990
    Date of Patent: August 18, 1992
    Assignee: University of Delaware
    Inventors: John R. Beamish, Norbert Mulders, Brian M. Patterson, Karl M. Unruh
  • Patent number: 5119272
    Abstract: A circuit board includes an insulative ceramic substrate, electrode portions and wiring portions formed on the ceramic substrate by selectively removing portions of a conductor layer plated on said ceramic substrate, a resistor layer formed on the ceramic substrate and connected to the electrode portions, and a pair of connecting thick film conductors for electrically connecting the thick film resistor and the conductor layer on both ends of the thick film resistor. The resistor layer includes a thick film resistor which is formed on the ceramic substrate. The conductor layer and the thick film resistor each have an end portion which is formed directly on the same connecting thick film conductor.
    Type: Grant
    Filed: December 16, 1988
    Date of Patent: June 2, 1992
    Assignee: Mitsumi Electric Co., Ltd.
    Inventors: Sadahiro Ohyama, Noriaki Sekine, Jiro Nakano, Tetsuya Takahashi, Yasumi Ushikubo, Masahiro Hirano
  • Patent number: 5118983
    Abstract: A high temperature low density operating element includes a porous high temperature operating element film formed into a predetermined configuration and disposed on one surface of an insulating member with good heat conductivity, a resistive film with a high melting point and good heat conductivity having a higher density than the high temperature operating element film, formed into a predetermined configuration on a second surface of the insulating member with good heat conductivity, a lead wire connected to the resistive film, an insulating protective film disposed on the insulating member covering the resistive film.
    Type: Grant
    Filed: March 19, 1990
    Date of Patent: June 2, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Noriko Morita, Susumu Hoshinouchi, Yoshihiko Kusakabe
  • Patent number: 5111068
    Abstract: A diffusion resistor circuit for reducing distortion caused in a diffusion resistor. The circuit includes the diffusion resistor having a substrate, an island area including an impurity of a first polarity diffused into the substrate and a resistor area including an impurity of a second polarity diffused into the island area, a circuit for supplying a current signal through the resistor area and another circuit connecting the island area to a generally central point of the resistor area for reducing distortion of the current signal.
    Type: Grant
    Filed: March 30, 1988
    Date of Patent: May 5, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Hiromi Kusakabe
  • Patent number: 5111179
    Abstract: The chip form electrical resistance is designed to be soldered notably on a printed circuit card or on an hybrid circuit substratum. It includes an electrically insulating substratum (1) of the ceramic type, to which is attached by a layer of adhesive organic resin (2) a sheet of metal or of resistive alloy (3) which is engraved to provide a sinuous resistance. The layer of resin (6) leaves in the area of the two opposite sides of the substratum (1), two free areas (5), at the extremities of the engraved resistive sheet (3).
    Type: Grant
    Filed: October 22, 1990
    Date of Patent: May 5, 1992
    Assignee: Sfernice Societe Francaise des l'Electro-Resistance
    Inventors: Claude Flassayer, Franklin Collins
  • Patent number: 5093647
    Abstract: A sliding electric part includes a set of two sliding members, wherein one of the sliding members is composed of a diamond substrate with an electric conductive portion formed by ion implanation or by the deposition of boron-doped p-type diamond on the sliding surface which slides along the other sliding member, and the other sliding member has an electric conductive portion formed on the sliding surface which slides along the one sliding member.
    Type: Grant
    Filed: October 5, 1990
    Date of Patent: March 3, 1992
    Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
    Inventors: Shoji Noda, Kazuo Higuchi, Masao Kohzaki
  • Patent number: 5068694
    Abstract: A Josephson integrated circuit comprises a substrate formed with a Josephson device, a resistance strip of zirconium provided on the substrate, a first refractory metal layer provided on a first region of the resistance strip; a second refractory metal layer provided on a second region of the resistance strip that is separated from said first region, a first superconductor interconnection pattern provided on the substrate so as to cover the first refractory metal layer, and a second superconductor interconnection pattern separated from the first superconductor interconnection pattern and provided on the substrate so as to cover the second refractory metal layer.
    Type: Grant
    Filed: December 28, 1990
    Date of Patent: November 26, 1991
    Assignee: Fujitsu Limited
    Inventor: Shiro Ohara
  • Patent number: 5065132
    Abstract: A programmable resistor 10 is provided having a resistive element 12. Resistive element 12 includes a substrate 26 formed by a layer of semiconductor of a first conductivity-type. A current path 32 is formed in substrate 26 by a layer of semiconductor of a second conductivity-type. An interface 36 having interfacial traps is formed between current path 32 and substrate 26. A backgate 24 is formed adjacent substrate 26. A first switch 14 selectively couples backgate 24 to a first voltage while a second switch 16 selectively couples backgate 24 to a second voltage.
    Type: Grant
    Filed: November 16, 1990
    Date of Patent: November 12, 1991
    Assignee: Texas Instruments Incorporated
    Inventors: Albert H. Taddiken, Han-Tzong Yuan, Hisashi Shichijo
  • Patent number: 5059941
    Abstract: A resistor device includes a thick-film resistor which includes a mixture of electrical conductive material and glass, and which has the electrical conductive material at a surface portion exposed; and electrodes which are deposited on the thick-film resistor to be connected to the exposed electrical conductive material.
    Type: Grant
    Filed: September 19, 1990
    Date of Patent: October 22, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Eishi Gofuku, Mitsuyuki Takada
  • Patent number: 5053743
    Abstract: A resistor constituted by a spiral region (4) of a second conductivity type and having a determined doping level, formed on a first surface of a semiconductor substrate (1) of the first conductivity type, having a first terminal on the first surface of the substrate and a second terminal electrically connected to the opposite surface of the substrate through an overdoped region of the same conductivity type as the substrate, more conductive areas (11) being formed at determined places of the spiral.
    Type: Grant
    Filed: April 13, 1990
    Date of Patent: October 1, 1991
    Assignee: SGS-Thomson Microelectronics S.A.
    Inventors: Jacques Mille, Daniel Quessada
  • Patent number: 5038132
    Abstract: A dual function circuit board substrate has a layer or sheet of ultrathin metal of relatively high electrical resistivity having a selected sheet resistivity characteristic bonded to a thin layer or sheet of metal of relatively high electrical conductivity. The layer of high electrical resistivity material is adhered to one side of a layer of organic electrically insulating material, and a heat-sink metal layer is adhered to an opposite side of the organic insulating layer to withdraw heat from the layer of high electrical resistivity material. The thin layers of high electrical resisivity and conductivity materials are selectively etched from the organic layer material to form a select circuit, and the layer of high electrical conductivity material is selectively etched from portions of the circuit to form one or more resistor elements having selected electrical resistances in the circuit.
    Type: Grant
    Filed: December 22, 1989
    Date of Patent: August 6, 1991
    Assignee: Texas Instruments Incorporated
    Inventors: Scott H. Lindblom, Wray E. Johnson
  • Patent number: 5021867
    Abstract: This is a structure of, and method for preparation of, molybdenum resistors in a superconductor integrated circxuit. It utilizes a pattern superconductor film; applying a titanium film on the patterned superconductor film; and then applying a molybdenum film on the titanium film to provide a titanium-molybdenum, etch-stop interface; applying a patterned resist film on the molybdenum film; etching the exposed molybdenum film to expose a portion of the titanium-molybdenum, etch-stop interface; and oxidizing the exposed titanium-molybdenum, etch-stop interface. The titanium-molybdenum etch stop interface protects the patterned superconductor film and the support (including any other underlayers) and increases processing margins for the etch time.
    Type: Grant
    Filed: May 30, 1989
    Date of Patent: June 4, 1991
    Assignee: Westinghouse Electric Corp.
    Inventor: John X. Przybysz
  • Patent number: 4979019
    Abstract: A printed circuit board has a base made from fibers (e.g., ceramic) and an inorganic coating (e.g., silicon carbide) covering the fibers to provide the base with inorganic properties. The base may have a particular coefficient of thermal expansion (CTE) as by providing the fibers with particular characteristics in the plane of, and perpendicular to, the base. The base may be isotropic thermally as by disposing the fibers in two adjacent transverse layers. An inorganic material (e.g. copper) on the base provides a radio frequency barrier. An inorganic material (e.g., silicon dioxide) on the RF barrier constitutes a dielectric insulator. An electrically conductive layer (eg. copper) partially covers the dielectric layer in a pattern defining an electrical circuit. A dielectric material (eg., silicon dioxide) fills the remaining space in this layer in a flush relationship with the conductive layer.
    Type: Grant
    Filed: May 11, 1988
    Date of Patent: December 18, 1990
    Assignee: Refractory Composites, Inc.
    Inventors: Edward L. Paquette, William C. Riley, Paul A. Taparauskas, James W. Warren
  • Patent number: 4968964
    Abstract: A thin film thermistor which includes an insulating substrate (21A), a Au-Pt fired electrode film (22A) in a particular comb-shaped pattern on the insulating substrate, with a little amount of oxide being added in the electrode film (22A), and a SiC thin film (23A) which is formed by sputtering on the substrate (21A) on which the electrode film (22A) is previously formed.
    Type: Grant
    Filed: April 20, 1989
    Date of Patent: November 6, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Takeshi Nagai, Masahiko Itoh
  • Patent number: 4962365
    Abstract: A resistor (10) includes a resistive filling (28) formed within a trench (12) and separated therefrom by an insulating layer (26). Resistive filling (28) is of the same type of semiconductor material as that of second layer (22), but of an opposite extreme of dopant concentration. A head region (32) may be formed below interface (30) within second layer (22) to more clearly delineate the edge of resistive filling (28) from second layer (22). Where resistive filling (28) is of a low dopant concentration, low resistance contact region (34) is formed of a high dopant concentration in order to provide a minimum resistance contact to resistive filling (28).
    Type: Grant
    Filed: March 30, 1989
    Date of Patent: October 9, 1990
    Assignee: Texas Instruments Incorporated
    Inventors: Robert H. Havemann, Robert H. Eklund