Abstract: A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications.

Abstract: A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications.

Abstract: An active infrared induction instrument powered by a dry battery capable of reducing power consumption through the adjustment of the emitter pulse width. The infrared emitting LED emits infrared signals, which, after being reflected by an object, are received by the infrared photodiode. The infrared signals received by the infrared photodiode then enter an integrated circuit chip through a comparator. The pulse widths of the infrared emission pulse signals are dynamically adjusted after the width of the pulse series is received by the discrimination chip, thus reducing the emission power consumption to save energy.

Abstract: An image pick-up apparatus comprising an area sensor in which detecting elements are two-dimensionally arranged on a substrate, and a reference supply circuit, for supplying a reference voltage to the detecting elements, which comprises a regulator for regulating the reference voltage. A low-pass filter is arranged between the regulator and the detecting elements. The reference voltage is supplied through the low-pass filter from the reference supply circuit.

Abstract: An imaging system for deployment within a high-radiation environment. The imaging system has an imaging array of photosensitive pixels, each of which contains a sense gate for integrating photogenerated charge during the course of a frame and an amplifier transistor for sampling voltage on the sense gate. Each pixel also contains an inject gate and select and reset FETs, for operation as a charge injection device (CID). Moreover, a circuit including a monitor transistor on each polysilicon layer of the imaging array provides a threshold voltage monitor signal used to compensate a drive signal applied to the array on the basis of threshold voltage shifts induced by exposure to radiation. The array is contained within a remote head that may be evacuated and temperature-controlled and that may contain radiation-hardened drive electronics for generating drive signals upon receipt of a start pulse received from a camera control unit located at a significant distance from the remote head.

Abstract: In an imaging apparatus according to the present invention, the driving unit drives each of the pixels in the non-readout region in the first mode such that the setting unit sets the input unit to a third electric potential with the transfer unit being ready to transfer the electric charge to reset the photoelectric conversion unit in a first period and that the setting unit sets the input unit to a fourth electric potential for the pixel to be deselected in a second period later than the first period.

Abstract: The dynamic range of a pixel is increased by using selective photosensor resets during a frame time of image capture at a timing depending on the light intensity that the pixel will be exposed to during the frame time. Pixels that will be exposed to high light intensity are reset later in the frame than pixels that will be exposed to lower light intensity.

Abstract: The present invention relates to a sensor apparatus having a structure capable of obtaining digital values of signal components with a high accuracy using an A/D conversing circuit with the outputted digital value thereof having a small number of expressive bits. In the sensor apparatus, a voltage value corresponding to the amount of incident light to a photodiode is held by a holding circuit through an integrating circuit and a CDS circuit. Meanwhile, a voltage value corresponding to the amount of incident light to an adjacent photodiode is held by another holding circuit through an integrating circuit and a CDS circuit. The voltage values held by the respective different holding circuits are inputted to a subtracting circuit through different paths. The subtracting circuit outputs a voltage value corresponding to the difference between the two inputted voltage values. In an A/D converting section, the difference voltage outputted from the subtracting circuit is converted into a digital value.

Abstract: A sensor device includes sensor elements two-dimensionally arranged and a sensor driving section driving the sensor elements. Each of the sensor elements includes a photoelectric conversion element generating electric charge according to an amount of received light, a charge storage section connected to one end of the photoelectric conversion element and storing electric charge generated by the photoelectric conversion element, a readout section reading either a voltage value resulted from the electric charge in the charge storage section or the stored electric charge, to output the read voltage value or the read electric charge and a reset section resetting the electric charge in the charge storage section through supplying a predetermined reset voltage to the charge storage section. The sensor driving section controls the reset section so that the predetermined reset voltage is continuously or intermittently supplied to the charge storage section over a period exceeding one horizontal scan period.

Abstract: The present invention aims to provide an imaging apparatus capable of reducing image unevenness even if a protective layer including a polarized solvent is used. The imaging apparatus of the present invention includes a plurality of pixels each having a conversion element and a TFT connected to the conversion element, a protective layer disposed over the plurality of pixels, a plurality of bias lines each electrically connected to each of the conversion elements, and a plurality of signal lines each electrically connected to each of the TFT. Then, the plurality of bias lines and the plurality of signal lines are alternately disposed at a predetermined interval within a region in the protective layer. Then, the plurality of bias lines is commonly connected through a connecting wiring on the outside of the region in the protective layer, and the connecting wiring is disposed to cross the plurality of signal lines.

Abstract: A scintillator layer for converting an incident radiation into a light having a wavelength detectable with a photoelectric conversion element is provided on a sensor substrate on which plural photoelectric conversion elements and switching elements are disposed via a flattening layer.

Abstract: A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.

Abstract: Apparatus, systems and methods for display processing line buffers incorporating pipeline overlap are disclosed. For example, an apparatus is disclosed including processing logic to use pixel processing algorithms to process a pixel value of a first portion of an image, and line buffers coupled to the processing logic. The line buffers to hold at least some pixel values of other portions of the image adjacent to the first portion. Where the pixel values of the other portions of the image held by the line buffers correspond to pixel values of the adjacent portions of the image that are to be convolved by the pixel processing algorithms with the pixel value of the first portion. Other implementations are also disclosed.

Abstract: An I/F converter 10 includes a first comparator portion 111, a second comparator portion 112, a current mirror circuit 14, a reference voltage source 15, an SR-type flip-flop circuit 16, a buffer amplifier 18, a first capacitive element C1, a second capacitive element C2, a switch SW1, a switch SW2, a switch SW11, and a switch SW21. The respective operational characteristics of the first comparator portion 111 and the second comparator portion 112 are identical to each other. The respective capacitance values of the two capacitive elements C1 and C2 are equal to each other. The I/F converter 10 is connected at its input end 10a to a photodiode PD, such that a current generated in the photodiode PD is inputted to the input end 10a, allowing a signal at a frequency corresponding to the amplitude of the inputted current to be outputted from the buffer amplifier 18 to the counter portion 19.

Abstract: The present invention relates to a photo-detecting apparatus having a structure for enabling photodetection with high sensitivity and wide dynamic range. When light is incident on a pixel section of an active pixel-type within a photo-detecting section, a voltage value corresponding to the amount of an electric charge generated at a photodiode included in the pixel section is outputted from the pixel section by way of a selecting transistor. A first pixel data readout section outputs the output from the pixel section as a first voltage value. On the other hand, the electric charge generated at the photodiode including the pixel section is outputted from the pixel section by way of a discharging transistor. The electric charge flown in a second pixel data readout section via a switch is accumulated in a capacitive element, and a voltage value corresponding to the amount of the accumulated electric charge is outputted from the second pixel data readout section as a second voltage value.

Abstract: A circuit includes a compression sub-circuit having an input and an output for dumping excess current, a voltage bucket, and a current source. The voltage bucket, such as a capacitor, and the current source, such as a photodetector, are coupled in parallel to the input of the compression sub-circuit. Preferably, the compression sub-circuit is a single FET having a gate voltage selected to allow current to bleed off or be dumped through the FET as the capacitor approaches being full, and dumps excess photocurrent when the capacitor is full. The capacitor is nearly full when it is at least three quarters full, and is substantially full or approaching being full when it is at least 90% of capacity. In a photodetector embodiment, one plate of the capacitor is coupled to the FET and the opposed second plate is coupled to a ramping voltage circuit.

Abstract: Signals from an object in a field of view are detected by an array of directional sensors and “re-converged” to create a three-dimensional image as the object changes contrast or moves relative to the sensors. Each sensor is oriented along an axis toward the field of view. Sensor signals are converted to logarithms thereof and transients are detected and compared to background signals. Resulting signals are connected in overlapping groups to coincidence detectors in a matrix. Each point in the field of view where two or more sensor axes intersect is represented by a coincidence detector, which is connected to the corresponding group of sensors. If a threshold number of sensors in the group detects a transient, the corresponding point in the image is deemed to be “contrasty” and can be made visible or otherwise perceivable by a human or can be further processed by a computer or other circuit.

Abstract: A radiation reader including a conversion device, and a method of driving the radiation reader. The conversion device includes (a) a pixel including a conversion device for converting an incident radiation into an electric charge, and (b) a reading circuit including at least one field effect transistor for reading the electric charge from the pixel in an amplifying manner as a signal containing a noise. The reading circuit includes first storage means for storing the signal containing the noise, second storage means for storing the noise, and processing means for deriving an output signal not containing the noise based on a first output from the first storage means and a second output from the second storage means.

Abstract: An image-sensing device includes a driver and an array of pixels. The driver controls the array of pixels to output a combined image signal that is a combination of at least two image signals for at least two aligned pixels in at least two rows, for reducing vertical resolution in the sub-sampling mode. In addition, a mixing circuit further averages the resulting combined signals for M consecutive odd or even columns for reducing horizontal resolution in the sub-sampling mode.

Abstract: In a light sensing element having simplified structure, an array substrate having the light sensing element and an LCD apparatus having the light sensing element, the light sensing element includes a first electrode, a control electrode and a second electrode. An alternating bias voltage is applied to the first electrode. An off voltage is applied to the control electrode. The second electrode outputs a light-induced leakage current based on an externally provided light and the bias voltage. Therefore, the array substrate includes one light sensing switching element corresponding to one pixel so that structure of the array substrate is simplified and opening ratio is increased.

Abstract: A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications.

Abstract: An anti-eclipse circuit of an image pixel includes an output line for receiving a reset output signal from a pixel and a circuit coupled to the output line for detecting when a pixel reset voltage at a pixel output is below a predetermined level, and, in response, for increasing a reset voltage at the pixel output to a value above the predetermined level. The detecting and increasing circuit comprises a charge amplifier circuit for receiving the reset output signal at the output line and a voltage generating circuit coupled to the output line responsive to the output of the charge amplifier circuit.

Abstract: Provided is a photoelectric conversion device, including: a plurality of photoelectric conversion blocks each including a photoelectric conversion element, photoelectric conversion element resetting means for supplying an initialization potential to the photoelectric conversion element to reset the photoelectric conversion element, and transfer means for transferring a voltage of the photoelectric conversion element, in which the photoelectric conversion element resetting means resets the photoelectric conversion element every time the voltage of the photoelectric conversion element is transferred and for a standby period, during a reading period. Therefore, it is possible to perform accurate image reading by reducing the influence of a foreign matter adhered to a light receiving surface of a photoelectric conversion device.

Abstract: Provided are a CMOS image sensor (CIS) type image sensing device for averaging and sub-sampling analog image signals at a variable sub-sampling rate and a method of driving the same. The image sensing device includes: a two-dimensional active pixel sensor (APS) array including pixels arranged in rows and columns; an averaging unit averages reset signals and image signals alternately generated from each of pixels corresponding to odd- numbered and even-numbered rows and columns in based on a predetermined sub-sampling rate in a sub-sampling mode by repeating a method of accumulating, averaging, (and dumping) the reset signals and the image signals, and generating a comparison signal corresponding to a difference between the average of the reset signals and the average of the image signals; and a conventional digital signal output circuit that generates digital signals corresponding to the sub-sampled (averaged) image signals generated from the pixels represented by the comparison signal.

Abstract: A method, apparatus, and system providing a pixel having increased fill factor by removing the row select transistor. A reset transistor in the pixel is connected to a column line, and the column line is used alternatively as a pixel readout line and as a voltage supply line for resetting a storage region in the pixel through the resent transistor.

Abstract: There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

Abstract: A method, apparatus and system providing a pixel within an imaging device in which a separate power source is used for resetting a floating diffusion node from a power source used for pixel operating power.

Abstract: A solid-state imaging device for preventing aging deterioration of image quality due to a thinning out reading mode in addition to a usual all pixel reading operation mode and maintaining a good image quality and a method for driving the same, including an imaging pixel portion 111 formed by arranging a plurality of pixels each including a photo-electric conversion element and a reading circuit of the photo-electric conversion element in a matrix, having an all pixel reading mode for reading pixel signals from all pixels of the imaging pixel portion 111 and a thinning out reading mode for intermittently selecting part of the pixels of the imaging pixel portion 111 for each pixel row or each pixel column or both of them to read out pixel signals, and having drive circuits 112 to 116 having a function of selecting the reading circuit of the imaging pixel portion 111 for each pixel row or each pixel column by a drive signal and receiving as input drive signals also with respect to the pixel rows or pixel columns

Abstract: The device for the acquisition and automatic processing of data obtained from optical codes comprises a CMOS optical sensor; an analog processing unit connected to the optical sensor; an analog/digital conversion unit connected to the analog processing unit; a logic control unit connected to the CMOS optical sensor, the analog processing unit and the analog/digital conversion unit; and a data-processing unit connected to the logic control unit and the analog/digital conversion unit. The CMOS optical sensor and at least one of the analog processing, analog/digital conversion, logic control and data processing units are integrated in a single chip. The data processing unit processes the digital signals corresponding to the image acquired by the CMOS sensor and extracts the optically coded data.

Abstract: Various embodiments comprise apparatus, methods, and systems that include an amplification apparatus comprising a first input, a second input, and an output, a first plurality of series-connected transistors including a first transistor having a first channel ratio and a first gate coupled to the first input, and a second plurality of series-connected transistors including a second transistor having a second channel ratio that is greater than the first channel ratio, the second transistor including a second gate coupled to the second input.

Abstract: An image pickup apparatus including: a plurality of photoelectric conversion elements for photoelectrically converting light from an object, a first output line to which signals from the plurality of photoelectric conversion elements are successively outputted, a plurality of first switches connected to the first output line to output the signals from the plurality of photoelectric conversion elements to the first output line, a second output line to which a reference signal is supplied, a plurality of second switches connected to the second output line to supply the reference signal to the second output line, a scanning circuit which controls the plurality of first switches and the plurality of second switches, and a differential circuit which obtains a difference between the signal from the first output line and the signal from the second output line.

Abstract: An image sensor pixel has variable conversion gain to prevent overexposure of the pixel without reducing the exposure period. Under dim lighting conditions, the pixel operates with high conversion gain and is highly sensitive to light. When the incident light is bright, the pixel switches into a low conversion gain, low-sensitivity mode. The variable conversion gain is implemented by connecting a variable capacitive load in parallel with the photodiode of the image sensor pixel. When the incident light intensity exceeds a certain threshold, the variable capacitive load is increased to allow the photodiode to absorb more light. Likewise, the variable capacitive load is decreased when the incident light intensity is below a certain threshold.

Abstract: There is provided a drive circuit of a solid-state image pickup device capable of generating pulse for vertical scanning the interval of which changes non-linearly and pulse other than the pulse for vertical scanning without increasing a circuit size and communication time for setting an electronic shutter. There is provided a drive circuit of a solid-state image pickup device including a polynomial arithmetic operation unit for carrying out an arithmetic operation of first or higher order of polynomial; an arithmetic operation controller of generating a variable of the polynomial to control an arithmetic operation in the polynomial arithmetic operation unit; and a pulse generator of generating a pulse based on a result of an arithmetic operation on a polynomial of the polynomial arithmetic operation unit.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: An image sensor such as the conventional CMOS image sensor, in which automatic controls including so-called automatic iris control and white balance adjustment for adjusting the sensor sensitivity, namely the charge accumulation time in each pixel, according to the brightness of the image sensing ambience are performed, involves the problem that, when the frame rate of the image sensor is slowed to save power consumption, the operation of the automatic control systems will also become slower and the image quality deteriorates. In the invented image sensor system using a CMOS image sensor, while a CMOS image sensor is operated at the full frame rate all the time, a circuit for processing image signals from the CMOS image sensor is operated at a speed close to that of full frame processing only when the power supply is turned on or when the image sensing ambience varies and switched to a lower frame processing speed when automatic controls, including iris control, have become stabilized.

Abstract: An image pickup area including a plurality of pixels arranged in a two-dimensional matrix pattern, each pixel being an amplified MOS image sensor, is divided into a block A including odd-numbered columns of pixels and a block B including even-numbered columns of pixels. A horizontal signal line and an output amplifier are provided for each of the block A and the block B. Signal voltages on vertical signal lines are temporarily stored in a line memory. In the normal mode, the signal voltages of two pixels adjacent to each other in the horizontal direction are supplied from the line memory respectively to the output amplifiers. In the correction mode, a switch is closed to connect the horizontal signal lines with each other so that the signal voltage of the same pixel is supplied to the output amplifiers.

Abstract: An image sensor comprising a pixel sensor, a first transistor, a second transistor, a third transistor and a fourth transistor. The pixel sensor receives illumination to generate a photocurrent. The first transistor coupled to a voltage source and the pixel sensor, is controlled by a reset signal to activate or deactivate. A first node is coupled to the first transistor and the pixel sensor, and the voltage source provide a first potential. The second transistor coupled to a second node and the first node, receives a reference voltage. The third transistor, coupled to the voltage source, is controlled by the voltage on the second node. The fourth transistor coupled to the third transistor and the image sensor, is controlled by a selection signal to activate or deactivate.

Abstract: A scintillator layer for converting an incident radiation into a light having a wavelength detectable with a photoelectric conversion element is provided on a sensor substrate on which plural photoelectric conversion elements and switching elements are disposed via a flattening layer.

Abstract: The device for the acquisition and automatic processing of data obtained from optical codes comprises a CMOS optical sensor; an analog processing unit connected to the optical sensor; an analog/digital conversion unit connected to the analog processing unit; a logic control unit connected to the CMOS optical sensor, the analog processing unit and the analog/digital conversion unit; and a data-processing unit connected to the logic control unit and the analog/digital conversion unit. The CMOS optical sensor and at least one of the analog processing, analog/digital conversion, logic control and data processing units are integrated in a single chip. The data processing unit processes the digital signals corresponding to the image acquired by the CMOS sensor and e the optically coded data.

Abstract: In an image reading device of the present invention, the polarity of a driving voltage for a Cs electrode is reversed every reading cycle (frame). For example, the Cs electrode is driven by positively charging the capacitor in odd-numbered cycles (frames) and by negatively charging the capacitor in even-numbered cycles (frames). As a result, an image reading device is provided that does not readily change electrical characteristics of the capacitor or TFT, and therefore are reliable over extended periods of use.

Abstract: A readout circuit (29) for reading active pixels in a sensor (10) having at least one sensor segment (11) each containing addressable pixels (12) includes a respective sample and hold unit (28) for sampling and holding an analog value associated with a corresponding pixel, and an analog multiplexer (35) in each segment having an addressable channel coupled to each sample and hold unit for carrying the corresponding held value of the respective pixel. A lookup table (38) stores addresses of predefined neighboring pixels associated with the respective pixel. An encoder (36) is responsive to one or more trigger signals for generating an address in the lookup table, and a controller (37) feeds the address to the lookup table and successively feeds the addresses of the predefined neighboring pixels output by the lookup table to the analog multiplexer.

Abstract: An analog-to-digital converter in an active pixel sensor array includes on board memory elements for storing results. The stored results can be read out in a different order than the order in which they were converted.

Abstract: The image sensor includes a first group and a second group of column readout circuits for reading out pixel signals from said pixels. The total number of column readout circuits in each group is substantially less than the number of columns in the image sensor pixel array. Further included is a multiplexer bus system having selection switches for selectively switching pixel signals from a block of pixels in a column as input into the first group of column readout circuits. The multiplexer bus system also selectively switches pixel signals from another block of pixels in a column as input into a second group of column readout circuits. However, when the first group of column readout circuits is reading and storing said pixel signals, the second group of column readout circuits is transferring out the processed signals. Thus, the first and second groups work alternately.

Abstract: To read stable image information by making small in a short time the amount of change in potential at the time the potential of signal wires or sensor bias wires drops a moment, the device is, in the refresh mode of photoelectric conversion pixels, so driven that the timing at which two drive wires are driven overlaps which are sequentially and at least consecutively driven by the control means among drive wires while keeping the signal wires at a reset potential.

Abstract: A photo-detector generated signal is measured as a sample set comprising a long signal and a short signal. The short signal is scaled to the value of the long signal if the long signal exceeds a dynamic range associated with the photo detector. In one embodiment, the short signal is obtained during a short time interval that is at the approximate middle of a long time interval such that the short and long intervals share a common median time value. Given such symmetry, an approximately linear signal yields a proportionality parameter between the long and short signals thereby allowing the short signal to be scaled. The proportionality parameter facilitates determination of an integration independent component of the photo detector signal that should be removed from the measured long and short signals before scaling. A plurality of sample sets can also be processed such that each sample set overlaps with its neighboring sample set, thereby increasing the effective number of sample sets.

Abstract: A photosensitive device, such as would be found in a digital scanner or camera, includes at least two sets of photosensors, the video signals from which are multiplexed together. While the two video paths are separate, before the multiplexing step, an offset correction process is carried out on each video path. After multiplexing, a final offset correction process is carried out to the combined signals, to remove offsets associated with the combined video path.

Abstract: An amplification type solid-state imaging device includes a pixel region including a plurality of amplification type photo-electric conversion elements arranged in a matrix array, vertical signal lines for transmitting a pixel signal and a reference signal for each pixel, a plurality of horizontal signal lines, a horizontal scanning circuit for transmitting signal pairs each including the pixel signal and the reference signal to the plurality of horizontal signal lines, a selection switch for sequentially switching the plurality of horizontal signal lines and for leading the plurality of horizontal signal lines into a common signal line, and a differential signal detection circuit in the common signal line for providing a differential signal between the pixel signal and the reference signal.

Abstract: A circuit for a pixel site in an imaging array includes a light-detecting element to convert incident light to a photocurrent and a reset transistor, operatively connected to the light-detecting element, to reset a voltage associated with the light-detecting element. The reset transistor hard resets the voltage associated with the light-detecting element and soft resets the voltage associated with the light-detecting element after the generation of the hard reset of the voltage associated with the light-detecting element. A pixel voltage of a column or row line is also measured by hard resetting the column or row line voltage to a first predetermined voltage; soft resetting the column or row line voltage to a first pixel voltage; hard resetting the column or row line voltage to a second predetermined voltage; soft resetting the column or row line voltage to a second pixel voltage; and determining a difference between the first and second pixel voltages, the difference being the measured pixel voltage.

Abstract: A circuit for a pixel site in an imaging array includes a light-detecting element to convert incident light to a photocurrent and a reset transistor, operatively connected to the light-detecting element, to reset a voltage associated with the light-detecting element. The reset transistor hard resets the voltage associated with the light-detecting element and soft resets the voltage associated with the light-detecting element after the generation of the hard reset of the voltage associated with the light-detecting element. A pixel voltage of a column or row line is also measured by hard resetting the column or row line voltage to a first predetermined voltage; soft resetting the column or row line voltage to a first pixel voltage; hard resetting the column or row line voltage to a second predetermined voltage; soft resetting the column or row line voltage to a second pixel voltage; and determining a difference between the first and second pixel voltages, the difference being the measured pixel voltage.

Abstract: A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight. A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that use a common output transistor. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of an output transistor.