Abstract: A sense node voltage relating to light intensity incident upon a light-detecting element is measured. To realize this measurement, a first integration reset pulse is generated to enable a resetting of the sense node voltage to a voltage value substantially equal to a reset voltage value associated with the first integration reset pulse, an edge of the first integration reset pulse triggering a beginning of a first integration period. Thereafter, a second integration reset pulse is generated to enable a resetting of the sense node voltage to a voltage value substantially equal to a reset voltage value associated with the second integration reset pulse, an edge of the second integration reset pulse triggering a beginning of a second integration period.

Abstract: An active pixel sensor comprises a photodiode providing a photodiode output current indicative of an intensity of light incident the photodiode and an integrator circuit electrically coupled to the photodiode. The integrator circuit is configured to provide a pixel voltage representing an integration of the photodiode output current when the photodiode is exposed to light and dark leakage current through the photodiode when the photodiode is not exposed to light. The integrator circuit is configured to set a reverse bias voltage on the photodiode and respond to at least one control input to set the reverse bias voltage to a first level. The active pixel sensor comprises a feedback loop configured to receive the pixel voltage and control the integrator circuit to adjust the reverse bias voltage to substantially reduce the dark leakage current through the photodiode to a desired level.

Abstract: A VI conversion circuit 40n inputs a voltage output from a hold circuit 30n, converts this input voltage to a current based on the resistance value of a resistor R40, and outputs this current from a drain terminal of a MOS transistor T40. An amp A40 has an adequate open loop gain and MOS transistor T40 operates in the saturated region. Here, if the resistance value of resistor R40 is R, the current value I that is output from VI conversion circuit 40n is in the proportional relationship expressed by the equation, “I=V/R,” with respect to the voltage V input into VI conversion circuit 40n.

Abstract: An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.

Abstract: A CMOS image pixel array formed on a chip is used for storing programmed information within the pixel array. Manufacturing lot and other data is written to the array during manufacturing and testing by applying a laser to pixels to render the photodiode defective. The programmed data is read from the pixel array using existing circuitry.

Abstract: An image sensor includes a two-dimensional array of pixels having a photodetector for collecting charge in response to incident light; a storage region adjacent the photodetector that receives the charge from the photodetector; a sense node adjacent the storage region that receives the charge from the storage region and converts the charge to a voltage signal; and an input to an amplifier for sensing the voltage signal from the sense node.

Abstract: A CMOS image sensor implementing a low noise active reset operation uses control circuitry outside a pixel sensor array and transistors in a pixel sensor as parts of an amplifier that charges a photodiode node. In one configuration, a reference transistor in the control circuit controls a current mirrored to a column line, and each pixel sensor in the corresponding column contains a transistor that acts as half of a differential pair when the row containing the pixel sensor is selected. A 4-transistor pixel sensor can be implemented using only NMOS transistors with PMOS transistors in the control circuitry used to complete an amplifier circuit.

Abstract: There is provided an image processing apparatus comprising: a sensor including a plurality of pixels each including a light receiving element, and a scanning circuit for reading out signals in time sequence from the plurality of pixels; and a drive circuit which supplies pulses for driving the scanning circuit, wherein the drive circuit is so arranged to output at least a first pulse and a second pulse smaller than the first pulse, the drive circuit supplying the first pulse to the scanning circuit when a first resolution is selected, and supplying the first pulse and the second pulse to the scanning circuit when a second resolution lower than the first resolution is selected.

Abstract: An MOS type solid-state image pickup device including pixels each of which comprises a photodiode PD, a detection portion N and a transfer transistor QT for transferring the charges accumulated in the photodiode PD to the detection portion N, wherein the gate voltage of the transfer transistor QT when the charges are accumulated in the photodiode PD is set to a negative.

Abstract: To provide a drive method for finding out an optimum storage period quickly. In the method for driving the MOS sensor having a plurality of pixels, after all the plurality of pixels are simultaneously reset, signals are then sequentially outputted from said plurality of pixels. The period from the reset time to the time just before said plurality of pixels output saturated signals is termed as the storage period.

Abstract: In order to solve the problem in which voltages Vsig1 read in units of rows have differences to cause vertical shading, thereby degrading image quality, and the problem in which the dynamic ranges of source follower circuits are different in units of rows because finite resistances are distributed in the power supply lines, a photoelectric conversion apparatus includes photoelectric conversion portions placed in a plurality of rows, an amplification section including a load section arranged in units of vertical output lines to amplify signal charges accumulated in the photoelectric conversion portions placed in a plurality of rows, a vertical scanning section for sequentially scanning signals amplified by the amplification section to read the signals onto the vertical output lines, and a horizontal scanning section for sequentially scanning the signals amplified by the amplification section to read the signals onto horizontal output lines, wherein the load sections are located on a side vertically opposite to

Abstract: Compact CMOS pixel sensors containing three or four total transistors and four or five control lines provide a high percentage of sensor area for the photodiode that measures light intensity. The CMOS pixel sensors thus have good light sensitivity. The CMOS pixel sensors also provide active reset operations yielding low noise when resetting node voltages. The low transistor count is achieved using the same transistors during both reset operations and readout operation. Reversing the current direction through a pixel sensor during readout allows the row selection transistor to act as a buffer for a transistor having a gate coupled to the photodiode node.

Abstract: Briefly, in accordance with one embodiment of the invention, a higher dynamic range image sensor may be implemented by comparing a voltage across the sensor to a threshold voltage during image capture. At the threshold voltage, a count may be registered and the image sensor may be reset for continued image capture until an exposure is complete. A final image signal may be obtained by multiplying the threshold voltage by the number of counts registered and adding the final image sensor voltage.

Abstract: A method and system for preventing white pixel difficulties resulting from undesired current induced in an image sensor having a photodiode and a depletion region therein. The photodiode is isolated in a pixel layout for an image sensor. A depletion region is configured, such that the depletion region is maintained in a defect-free region associated with the pixel layout for the image sensor, thereby reducing white pixel difficulties caused by induced and undesired current. The image sensor is preferably a CMOS image sensor. A depletion region of the photodiode is constantly maintained in a defect-free region during operation of the CMOS image sensor.

Abstract: An active pixel sensor cell array in which a partial transimpedance amplifier amplifies the output of each cell. The pixel sensor cell array comprises a plurality of pixel sensor cells and a second part of the amplifier. Each pixel sensor cell comprises a photo-sensitive element, a capacitor and a first part of an amplifier. The capacitor is coupled between a terminal of the photo-sensitive element and an output line of the cell. The capacitor is operable to provide a capacitive feedback in the pixel sensor cell. The second part of the amplifier is coupled to the output lines of a plurality of pixel sensor cells. The amplifier is configured to amplify an output signal from a cell.

Abstract: Each pixel includes first and second photodiodes that are receiving-light detecting elements. The first photodiode applies a first potential according to an amount of light entering into the corresponding pixel. An internal node is electrically coupled with an internal node in another pixel via a resistance component. Hence, the second photodiode applies a second potential according to an average amount of light on the periphery to the corresponding internal node. A pixel signal generating circuit reads out a multiplied result of the first and second potentials as a pixel signal. The pixel signal has an intensity corresponding to the amount of light in the pixel in accordance with a receiving-light sensitivity characteristic (signal amplification factor) that is automatically adjusted based on an average amount of light in a region on the periphery of the pixel.

Abstract: In order to provide a solid state image pickup device in which an offset voltage in an image signal from which a noise signal is removed is made to be low, when an image pickup operation is performed while the MOS transistor T1 is ON, after a signal ?VD with a value Vh is integrated by a capacitor C, the signal ?VD is Vm (Vm<Vh) and a pulse signal ?V is given so that an image signal is output. When dispersion of sensitivity is detected while the MOS transistor T1 is OFF, after the signal ?VD with the value Vh is integrated by the capacitor C, the signal ?VD is V1 (V1<Vm) and the pulse signal ?V is given so that a noise signal is output.

Abstract: It is an object of the present invention to provide a solid-state image pickup device capable of preventing any output variation due to a threshold voltage variation, and preventing a dynamic range from being narrowed in conjunction with deterioration in outputs due to a lowered threshold voltage. The present invention provides improvements in type and connection of a reset transistor, a select transistor, and an amplifier transistor to achieve the above object. Specifically, the present invention provides a solid-state image pickup device comprising a first MOS transistor serving as a reset switch, a second MOS transistor serving as a select switch, a photodiode, and a third MOS transistor having a source connected in series with the photodiode.

Abstract: Motion/Saturation detection system and method for synthesizing high dynamic range motion blur free images from multiple captures, the system and method utilizing photocurrent estimation to reduce read noise and enhance dynamic range at the low illumination end, saturation detection to enhance dynamic range at the high illumination end, and motion blur detection to ensure the photocurrent estimation is not corrupted by motion. Motion blur detection also makes it possible to extend exposure time and to capture more images, which can be used to further enhance dynamic range at the low illumination end. The present invention operates completely locally, making it well suited for single chip digital camera implementations.

Abstract: An automatic exposure system is arranged to dynamically adjust the exposure time of a pixel array in an imaging system. A selected group of pixels from the pixel array are evaluated using a non-destructive readout procedure to determine the proper exposure time for the pixel array, while the pixel array is exposed to light that is reflected from a scene. Threshold detectors are employed to compare the signals from the selected group of pixels to a peak level that corresponds to a threshold limit for the pixels. The exposure of the pixel array is terminated when at least one pixel from the selected group of pixels exceeds the threshold limit. The threshold limit may be set to a level that is below total saturation for the pixels such that an overexposure margin is provided. Enhanced image contrast is achieved using automatic exposure time adjustment.

Abstract: A pixel circuit, and a method for operating a high-low sensitivity (HLS) pixel circuit, to provide increased dynamic range in an imager. The pixel circuit combines a four transistor (“4T”) and a three-transistor plus capacitor (“3TC”) configuration in one pixel, where the 4T portion of the pixel is coupled to a high sensitivity buried photodiode region, and the 3TC portion of the pixel is coupled to a low sensitivity buried photodiode region. The pixel circuit first reads out charge from the high sensitivity photodiode region and compares it to a reset voltage, then reads out charge from the low sensitivity photodiode region. Under an alternate embodiment, multiple HLS pixels are coupled through a common floating diffusion node.

Abstract: The invention is directed to an imaging device and a method of operating the imaging device, which will reduce banding in the image caused by parasitic capacitance. The imaging device comprises an array of pixels arranged in rows and columns and column signal lines adapted to be selectively coupled to the rows of pixels at predetermined times. Each pixel element has a photodetector coupled to a reset switch for receiving a reset signal to reset the photodetector. The imaging device further includes a precharge circuit adapted to place a voltage on the column signal lines. The method of operating the imaging device includes the steps of applying a precharge voltage to the signal lines, resetting the photodetectors in a row, integrating the photodetector voltage as light impinges on the reset photodetectors, coupling the integrated photodetectors to the signal lines, and sampling the integrated voltage coupled to each of the signal lines.

Abstract: To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

Abstract: A process for controlling a photosensitive device including at least one photosensitive point with a photodiode connected to a switching element. The process submits the photosensitive point to successive imaging cycles. Between a first imaging cycle and a second imaging cycle, the process produces a holding phase terminating at the start of the second imaging cycle. During this holding phase, whose duration is equal to several equal time intervals that are as short as possible, the photosensitive point is exposed to an optical flash at the start of each time interval. Between successive optical flashes, the photodiode is reverse biased. The junction region between the photodiode and the switching element has substantially the same potential at the end of each time interval.

Abstract: There are provided a solid state image pickup device in which the accumulation time of each pixel when an electronic shutter operation is performed is constant, and a high shutter speed can be set, a driving method therefor, and a camera. A solid state image pickup device (20) having means 3, 4, 7, and 11 which simultaneously perform reading operation of one row and an electronic shutter operation for the other row in a one-pixel period P is constituted.

Abstract: In a CMOS image pickup device in which the signal corresponding to the accumulated charge amount of each pixel is output to horizontal signal lines wired on a row basis, for example, two vertical selection transistors are provided for every horizontal signal lines, and two vertical signal lines and two vertical scan circuits are provided for every horizontal signal line, thereby separately outputting signals which are different in accumulation time and obtained by arbitrarily dividing 1 field into any number of parts on the basis of integer times of 1H.

Abstract: Pixels in an array of image sensor pixels contain photo-sensors and circuits having inputs connected to the photosensors. The circuits have feedback loops for reducing fixed pattern noise in the array. Output from each pixel is used to latch a multibit counter value supplied by a global counter. Each feedback loop preferably includes a pair of alternately-toggling switching transistors to minimize unwanted charge injection. An image sensor according to the invention can be used for, e.g., motion sensing.

Abstract: A CMOS image sensor for providing a wider dynamic range even at a low power supply voltage level includes a plurality of unit pixels and a control unit. Each unit pixel includes: a light sensing element for sensing an incident light to generate photoelectric charges to a sensing node; a first switching unit, coupled between a power terminal and the sensing node, for transferring a reset voltage level from a voltage source to the light sensing element; an amplification unit for amplifying a voltage level of the sensing node to output an amplified signal, wherein one terminal of the amplification unit is coupled to a ground terminal; a second switching unit, coupled between an output node and the other terminal of the amplification unit, for outputting the amplified signal as an image data via the output node. The control unit, which is coupled between the power terminal and the output node, controls an output resistance of the output node.

Abstract: Pixels in an array of image sensor pixels contain photo-sensors. In response to illumination of a photo-sensor, an initial signal is generated. Multiple comparison signals are also generated based on the initial signal. One of the comparison signals remains internal to the pixel, and other comparison signals are transmitted to neighboring pixels. Within a pixel, the internal comparison signal is compared to a sum of comparison signals received from neighboring pixels. Based on the comparison, a data value may be latched and used for indicating a relative difference in pixel illumination.

Abstract: Pixels in an array of image sensor pixels contain photo-sensors and circuits having inputs connected to the photosensors. The circuits have feedback loops for reducing fixed pattern noise in the array. Output from each pixel is used to latch a multibit counter value supplied by a global counter. Each feedback loop preferably includes a pair of alternately-toggling switching transistors to minimize unwanted charge injection. An image sensor according to the invention can be used for, e.g., motion sensing.

Abstract: The invention relates to an arrangement which comprises electrical elements which include sensors for electromagnetic radiation such as light or X-rays or are constructed so as to emit or change light. At least one element of the arrangement is provided with a switching unit which evaluates the signal patterns of at least two control inputs of the element and compares them with at least one activation pattern. The element is activated in the case of correspondence. At least two elements of the arrangement have at least one identical activation pattern. The control inputs of the elements are preferably coupled to a control lead bus.

Abstract: Pixels in an array of image sensor pixels contain photo-sensors. In response to illumination of a photo-sensor, an initial signal is generated. Multiple comparison signals are also generated based on the initial signal. One of the comparison signals remains internal to the pixel, and other comparison signals are transmitted to neighboring pixels. Within a pixel, the internal comparison signal is compared to a sum of comparison signals received from neighboring pixels. Based on the comparison, a data value may be latched and used for indicating a relative difference in pixel illumination.

Abstract: A clamping circuit including a clamping diode, a bias line, and a clamp line is incorporated into a pixel circuit of amorphous silicon sensor arrays. The clamp diode in each pixel prevents the voltage across the photodiode from dropping below a specific threshold. By keeping the photodiode under reverse bias even under conditions that may otherwise saturate the pixel, image lag is reduced. In full fill factor amorphous silicon sensor arrays, a clamping circuit includes a clamp TFT, a bias plane, a clamp line, and a drain line. The clamp TFT reduces lag and blooming by draining off excess current developed under overexposure conditions. A method to globally reset a sensor array and a method to test and repair a TFT matrix in full fill factor sensor arrays without damaging the overlying collection electrode and sensor layer are also provided.

Abstract: The invention relates to an arrangement of sensor elements in which the sensor elements are arranged to detect electromagnetic radiation, such as X-rays or light, and to generate in response thereto a charge signal which corresponds to the radiation intensity. Furthermore, a sensor element includes means which enable determination of the incident radiation dose. The sensor elements in the arrangement form groups so that the outputs of all sensor elements of a group are coupled and the sensor elements of a group are preferably arranged so as to neighbor one another. This on the one hand enables determination of the dose in these zones while on the other hand images of lower resolution can be formed simply by combining output signals of a plurality of sensor elements. An arrangement of this kind can be used, for example, in an X-ray diagnostic device or in an optical image acquisition system.

Abstract: A circuit for a pixel site in an imaging array includes a light-detecting element to convert incident light to a photocurrent and a reset transistor, operatively connected to the light-detecting element, to reset a voltage associated with the light-detecting element. The reset transistor hard resets the voltage associated with the light-detecting element and soft resets the voltage associated with the light-detecting element after the generation of the hard reset of the voltage associated with the light-detecting element. A pixel voltage of a column or row line is also measured by hard resetting the column or row line voltage to a first predetermined voltage; soft resetting the column or row line voltage to a first pixel voltage; hard resetting the column or row line voltage to a second predetermined voltage; soft resetting the column or row line voltage to a second pixel voltage; and determining a difference between the first and second pixel voltages, the difference being the measured pixel voltage.

Abstract: A circuit for a pixel site in an imaging array includes a light-detecting element to convert incident light to a photocurrent and a reset transistor, operatively connected to the light-detecting element, to reset a voltage associated with the light-detecting element. The reset transistor hard resets the voltage associated with the light-detecting element and soft resets the voltage associated with the light-detecting element after the generation of the hard reset of the voltage associated with the light-detecting element. A pixel voltage of a column or row line is also measured by hard resetting the column or row line voltage to a first predetermined voltage; soft resetting the column or row line voltage to a first pixel voltage; hard resetting the column or row line voltage to a second predetermined voltage; soft resetting the column or row line voltage to a second pixel voltage; and determining a difference between the first and second pixel voltages, the difference being the measured pixel voltage.

Abstract: An image sensor comprising a matrix of solid-state light sensor elements each representing a unit pixel, which is capable of reading out sensor signals from respective pixels in a time series by sequentially selecting pixels on a line-by-line basis and sequentially selecting pixels in a selected line, wherein each pixel line is divided into a plurality of blocks with each block composed of the same specified number of pixels and a first scanning means sequentially reads pixel sensor signals on the block-by-block basis starting from the first block and a second scanning means reads pixel sensor signals of the readout block. The image sensor thus constructed can achieve high speed scanning of respective pixels with a minimal increase in power consumption.

Abstract: A multi-cell cluster which includes a plurality of light-detecting unit cells and a single charge-integration and readout circuitry. Typically, each of the cells produces charge representative of the detected light. The circuit may be shared by the plurality of unit cells, and used to read-out the charge in real-time. The cluster may also include a switch associated with each unit cell, such that each switch connects its associated unit cell to the circuit. The switch may also be controlled in a time-multiplexing manner. Each unit cell may include a photodetector, a photodiode, or a photogate. The circuit may include a shared storage device, a shared reset circuit, or a readout circuit. Typically, the shared storage device may be for accumulating the charge in the focal plane. The here-above described apparatus facilitates either static or dynamic, either local or global image resolution/sensitivity tradeoffs.

Abstract: To provide a photoelectric converter in which random noise is reduced. In a photoelectric converter, an output terminal of a photoelectric converter means is connected to input terminals of a reset means and an amplifying means, a charge transfer means is connected to an output terminal of the amplifying means, another terminal of the charge transfer means is connected to a capacitor and a gate of a source follower amplifier, a source of the source follower amplifier is connected to a channel select means, another terminal of the channel select means is connected to a common signal line, and the common signal line is connected to a current source.

Abstract: An improved active pixel sensor soft reset circuit for reducing image lag while maintaining low reset kTC noise. The circuit pulls down the sensor potential to a sufficiently low level before the soft reset function is completed. The level to which the sensor potential is pulled is set between 0 and the critical potential at which the reset transistor will be on when the soft reset function begins. The timing of the pull down function is such that the sensor is stabilized at the low potential before the soft reset function completes. In one embodiment, the sensor potential is pulled down using a pull-down circuit, which may consist of a CMOS type inverter. In another embodiment, the sensor potential is pulled down by the bit line. Two ways in which the bit line may be pulled down are natural discharge, or by increasing the bias on the loading transistor. Two ways in which the bias on the loading transistor may be increased are a biasing circuit, or by using a pull-down transistor.

Abstract: An image sensor comprises a detector circuit (17) with detector diodes (3), which are reverse biased during image sensing. It is characterized in that the cathode voltage of the detector diodes is controlled by forward biasing detector circuit (17) diodes via the read circuit (20). The control diodes can be dedicated diodes or forward biased photodetector diodes. In the latter case, a picture is taken in several sequences.

Abstract: In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

Abstract: In a solid state image pickup device, in order to form a bypass region with precisely controlled impurity concentration and width, there is provided a solid state image pickup device comprising a photoelectric conversion unit composed of a first region of a first conductive type formed on a semiconductor substrate and having a principal surface, a second region of a second conductive type formed in the first region, and a third region of the first conductive type present between the second region and the principal surface, a fourth region of the second conductive type formed in the first region, and a charge transfer unit including the first region, an insulation layer on the first region and a control electrode provided on the insulation layer, for transferring a signal charge accumulated in the photoelectric conversion unit, to the fourth region, wherein the photoelectric conversion unit and the charge transfer unit are connected through a fifth region of the second conductive type.

Abstract: An image sensor system comprises an array of pixels. Each of these pixels includes a light sensitive element that generates a pixel signal that is indicative of the amount of light received by that pixel. A comparator then compares the pixel signal to a reference signal and generates a strobe signal in response to this comparison, while a global counter generates a count across a shutter period. Finally, an array of memory elements is provided. Each of these memory elements stores a count from the global counter in response to receiving the strobe signal from the corresponding pixel of the array of pixels. As a result, the array of pixels has relatively little logic functionality. Each pixel need only contain the light sensitive element and the comparator. Thus, the system can provide a good fill factor. Further, the global counter can be shared across the entire memory array. It is most applicable to implementation in CMOS technology.

Abstract: A physical quantity distribution sensor is disclosed. The sensor comprises: a plurality of sensor/storage sections each having a sensor element for sensing a received physical quantity and a storage element for storing the information of physical quantity sensed by the sensor element; a selector for selecting at least one of the sensor/storage sections; and a plurality of buffers each capable of detecting and supplying the information stored in at least one selected sensor/storage section. This sensor further comprises at least one selection signal transfer line for transferring an output of the selector. Power supply input portions of the buffers are connected to the selection signal transfer line, and the buffers are operated using, as a power voltage, an output of the selector entered into the buffers through the selection signal transfer line.

Abstract: Disclosed is a fault tolerant CMOS image sensor that includes circuitry for identifying defective pixels and masking them during image generation. Masking may involve, in one example, replacing the output of a given pixel with an average of the output of surrounding non-faulty pixels. Thus, while image sensors may be fabricated with some number of faulty pixels, the images produced by such sensors will not have undesirable bright or dark spots. The disclosed sensor includes (a) one or more pixels (active or passive) capable of providing outputs indicative of a quantity of radiation to which each of the one or more pixels has been exposed; and (b) one or more circuit elements electrically coupled to the one or more pixels and configured to identify and correct faulty pixels in the CMOS imager. The one more pixels each include a photodiode diffusion formed in a well and a tap to power or ground also formed in the well.

Abstract: A circuit arrangement of a video sensor chip has photosensitive pixels arranged in a matrix, each pixel having a phototransistor whose output photoelectric current is amplified logarithmically and sent as a voltage signal to an analyzer circuit.

Abstract: There is provided an image sensing apparatus comprising a plurality of pixels each including a photoelectric conversion unit, an amplification unit for amplifying a signal from the photoelectric conversion unit, a transfer unit for transferring the signal from the photoelectric conversion unit to the photoelectric conversion unit, and a read control unit for controlling a read of the signal from the amplification unit under control of the voltage level of the input portion of the amplification unit.

Abstract: Solid-state image-pickup devices and associated drive methods are disclosed that simultaneously provide an image signal and a motion-detection signal. A representative device comprises an array of multiple pixels that produce pixel outputs according to amounts of light received by individual pixels. A vertical-readout line is provided for each column of pixels. A vertical-scanning circuit sequentially outputs signals from the pixels to the vertical-readout lines in horizontal-line units. Differential-processing circuits subtract out dark signals from image signals. Body-motion-detection circuits output a signal based on the difference between the pixel outputs during a current frame and the pixel outputs during a previous frame. A horizontal-scanning circuit sequentially delivers the outputs of the differential-processing circuits and the body-motion-detection circuits onto respective horizontal-readout lines to simultaneously form an image signal and motion-detection signal.

Abstract: An active pixel sensor cell array in which a two-stage amplifier amplifies the output of each cell. The two-stage amplifier design reduces fixed pattern noise in the image data generated by reading the array, by providing increased gain for the output of each cell without impractically increasing the size and complexity of each cell. For each column of cells of the array, one part of the two-stage amplifier for each cell is shared by all cells of the column, and another part of the two-stage amplifier for each cell is included within the cell itself. Preferably, each cell includes only NMOS transistors (no cell includes a PMOS transistor). In preferred embodiments, a differential amplifier within each cell is the primary stage of the cell's output amplifier, PMOS load circuitry including a secondary output amplifier stage is shared by all cells of the column, and the two amplifier stages for each cell together comprise an op amp.