Abstract: A photoresist film removing apparatus includes a reacting chamber, an ozonizer producing a gas supplied to the reacting chamber, and an exhaust system that exhausts the gas from the reacting chamber. A source of a photoresist film-remover is located opposite a stage carrying a substrate covered with photoresist. Photoresist film-remover and the gas are supplied to the substrate through apertures. An electric field may be generated between the source of the photoresist film-remover and the substrate. Alternatively, a centrally located feed tube supplies only one of the gas and the photoresist film-remover through a single aperture and a reservoir discharges the other through apertures. The reservoir surrounds and is sealed to the feed tube. The apparatus may include a container holding a liquid photoresist film-remover and a mixture of the gas and remover is supplied from outside the reacting chamber to the substrate.

Abstract: A scatterometer, configured to measure a property of a substrate, includes a radiation source which produces a radiation spot on a target formed on the surface of the substrate, the size of the radiation spot being smaller than the target in one direction along the target, the position of the radiation spot being moved along the surface in a series of discrete steps. A detector detects a spectrum of the radiation beam reflected from the target and produces measurement signals representative of the spectrum corresponding to each position of the radiation spot. A processor processes the measurement signals produced by the detector corresponding to each position of the radiation spot and derives a single value for the property.

Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.

Abstract: Disclosed herein is a coating and developing apparatus 1 whose decreases in substrate-conveying accuracy can be suppressed. A processing block S2 of the coating and developing apparatus 1 includes multiple resist-film forming blocks G2, G3, and a developing block G1. A conveyance element 12 for substrate loading into the processing block S2 is provided to convey substrates W from a carrier C to the resist-film forming blocks G2, G3. Also, a conveyance element I for substrate loading into an exposure apparatus S4 is provided in an interface block S3 to load the substrates W into the exposure apparatus S4 and after unloading the substrates W from the exposure apparatus S4, convey the substrates W to the developing block G1.

Abstract: A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.

Abstract: A resist treatment unit for performing treatment on a resist film which has been formed on a substrate is disclosed. This resist treatment unit includes: a treatment container capable of maintaining a vacuum therein; a mounting table provided in the treatment container for mounting the substrate on which the resist film has been formed thereon; a gas supply part for jetting a mixture gas containing a first gas and a second gas which are chemically inert toward the mounting table at a predetermined flow rate; and an exhaust part capable of exhausting the treatment container to a degree of vacuum at which the mixture gas jetted from the gas supply part at the predetermined flow rate is able to be a molecular beam in the treatment container.

Abstract: In one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can forms a resist film on a substrate. The method can expose a portion of the resist film. The portion is formed on a device area of the substrate and the device area includes a center portion of the substrate. After the exposing the device area, the method can apply a reaction control process for controlling expansion of a reacted region in the resist film. After the applying the reaction control process, the method can expose another portion of the resist film and the another portion is formed on a peripheral area surrounding the device area. After the exposing the peripheral area, the method can heat the resist film, and after the heating, the method can develop the resist film.

Abstract: A coating/developing apparatus includes a process section including processing units to perform a series of processes for resist coating and development; an interface section disposed between the process section and immersion light exposure apparatus; and a drying section disposed in the interface section to dry the substrate immediately after the immersion light exposure process. The drying section includes a process container configured to accommodate the substrate, a substrate support member configured to place the substrate thereon, a temperature-adjusted gas supply mechanism configured to supply a temperature-adjusted gas into the process container, and an exhaust mechanism configured to exhaust the process container. The drying section is arranged to dry the substrate by supplying the temperature-adjusted gas into the process container with the substrate placed on the substrate support member, while exhausting the process container.

Abstract: A resist coating/developing apparatus includes: a resist film-forming unit configured to apply a resist onto a substrate to form thereon a resist film; a resist developing unit configured to develop the resist film after exposure to pattern the resist film; a solvent gas generator configured to generate a solvent gas containing a vapor of a solvent having a property of dissolving the resist film; a solvent gas conditioner connected to the solvent gas generator and configured to condition the solvent gas generated in the solvent gas generator; a processing chamber configured to house the substrate having thereon the resist film which has been developed and patterned in the resist developing unit, and connected to the solvent gas conditioner so that the solvent gas, which has been conditioned in the solvent gas conditioning section, is supplied to the substrate housed in the processing chamber; and an exhaust system connected to the processing chamber to evacuate the processing chamber to a reduced pressure.

Abstract: An edge exposure unit includes a projector, a projector holding unit, a substrate rotating unit, an outer edge detecting unit and a surface inspection processing unit. Each component of the projector holding unit operates to move the projector in an X direction and a Y direction. The projector irradiates a peripheral portion of a substrate with light transmitted from a light source for exposure through a light guide. Edge sampling processing is performed based on distribution of an amount of light received in a CCD line sensor of the outer edge detecting unit. Surface inspection processing is performed based on distribution of an amount of light received in a CCD line sensor of the surface inspection processing unit.

Abstract: A method of supplying a developing solution is provided. The method includes supplying a developing solution onto a substrate from a first developing solution nozzle, so as to form a ribbon-like region on the surface of the substrate, while rotating the substrate about a vertical axis via a substrate holding part. The method further includes shifting a position of the ribbon-like region in which the developing solution is supplied. Developing solution is supplied from a second developing solution nozzle, so as to form a circular region on the central portion of the substrate or form a ribbon-like region shorter in length than the ribbon-like region of the developing solution supplied from the first developing nozzle. Simultaneously, the substrate is rotated about the vertical axis via the substrate holding part, thereby spreading the developing solution toward a peripheral portion of the substrate by centrifugal force.

Abstract: Disclosed is an coating/developing apparatus and method thereof in which the processing time is shortened and the foot prints is reduced by shortening the travel distance of a wafer transfer arm. The coating/developing apparatus of the present disclosure includes, inter alia, liquid processing part (COT) that processes the substrate using a liquid, a cooling processing part (CA) provided to correspond to the liquid processing part (COT) and perform the cooling process for the substrate, a liquid processing unit (COTU) provided to correspond to the cooling processing part (CA) and equipped with a heating processing part (HP) that performs a heating processing for the substrate. The cooling processing part (CA) transfers the substrate to/from the liquid processing part (COT) and the heating processing part (HP).

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

Abstract: An immersion lithography apparatus includes: a projection optical system which projects a pattern of a mask onto a substrate; a substrate cleaning unit which cleans the substrate prior to projection of the pattern; a liquid supply mechanism which supplies the same liquid to an immersion region between the projection optical system and the substrate and to the substrate cleaning unit; a first liquid discharge path through which the liquid discharged from the immersion region is passed; and a second liquid discharge path through which the liquid discharged from the substrate cleaning unit is passed.

Abstract: A system and method of calibrating optical line shortening measurements, and lithography mask for same. The lithography mask comprises a plurality of gratings, with a calibration marker disposed within each grating. The mask is used to pattern resist on a semiconductor wafer for purposes of measuring and calibrating line shortening. The pattern on the wafer is measured and compared to measurements made of the pattern on the mask. The difference gives the amount of line shortening due to flare, and may be used to calibrate line shortening measurements made using optical measurement tools.

Abstract: A block for coating film formation and a block for a development process are stacked. A delivery stage to effect delivery of a substrate with a transportation unit for use in a block is provided for each process block at the carrier block side to constitute a shelf-type delivery stage group. A vertical transportation unit is provided to transport a substrate between the delivery stages in the delivery stage group. A substrate inspection unit is disposed at an upper empty space of the carrier block. A substrate is input to the substrate inspection unit directly by the vertical transportation unit or via a delivery stage in the delivery stage group. The substrate inspection unit may be disposed in the delivery stage group.

Abstract: A substrate processing system processes a plurality of substrates in a single-substrate processing mode by a plurality of processes and provided with a plurality of modules respectively for carrying out processes. When a defect is found in a substrate, a defective processing unit that caused the defect can be easily found out. The substrate processing system and a substrate processing method to be carried out by the substrate processing system can suppress the reduction of throughput when a large number of substrates are to be processed. The substrate processing system is provided with a plurality of modules for processing a plurality of substrates (W) in a single-substrate processing mode by a plurality of processes and includes a substrate carrying means (A4) for carrying a substrate (W) from a sending module to a receiving module, and a control means (6) for controlling the substrate carrying means (A4) on the basis of one of at least two carrying modes each assigning receiving modules to sending modules.

Abstract: A coating and developing system has a first processing block, a second processing block, and a transfer block interposed between the first and the second processing block. A first direct carrying means carries substrates from a carrier block to the transfer block. The transfer block distributes the substrates to respective film forming unit blocks of the first and the second processing block. Substrates on which films have been formed by the first and the second processing block are collected temporarily in the transfer block. A second direct carrying means carries the substrate collected in the transfer block from the transfer block to an interface block. Use of the first and the second processing block can improve the throughput of the coating and developing system. Since a carrying route from the carrier block to the first processing block, and a carrying route from the carrier block to the second processing block are the same, a carrying program is easy to create.

Abstract: A pattern forming system 1 includes a checking apparatus 400, a storage device 502, and a control section 500. The checking apparatus 400 is configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage device 502 stores a correlation formula obtained from the first check result and the second check result. The control section 500 is configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.

Abstract: A pattern forming system 1 includes a checking apparatus 400 and a control section 500. The checking apparatus 400 is configured to measure and check a sidewall angle SWA of a resist pattern formed on a substrate W after a developing process. The control section 500 is configured to use a difference between a target value of the sidewall angle SWA of the resist pattern after the developing process and a check result of the sidewall angle SWA obtained by the checking apparatus 400, to set a process condition for a first heat process 71 to 74 or a second heat process 84 to 89 so as to cause the sidewall angle SWA to approximate the target value thereof after the developing process.

Abstract: A pattern forming system 1 is configured to execute a series of processes, which includes a first heat process for performing a heat process on a substrate W after a resist liquid coating process, a light exposure process for performing light exposure on a resist film in accordance with a predetermined pattern, a second heat process for promoting a chemical reaction in the resist film after the light exposure, a developing process for developing the resist film after the light exposure, and an etching process for etching an oxide film by use of a resist pattern formed by the developing process as a mask. The system includes a checking apparatus 400 configured to measure and check a state of a pattern formed after the etching process, and a control section 500 configured to use a check result to set a condition for the first heat process and/or the second heat process so as to cause the state of the pattern to be uniform on a surface of the substrate W after the etching process.

Abstract: A substrate transfer apparatus, for transferring a substrate from a first module to a second module, includes a moving base having a Y-motion axis for moving the moving base in Y-direction, and a substrate holding member mounted to the moving base via X-motion axis so as to move relative to the moving base to be in an advanced position and a retracted position relative to the moving base. The X-motion axis operates when the Y-motion axis is operating, if the X-motion axis must be parallel to the Y-motion axis when transferring the substrate from the substrate holding member to the second module.

Abstract: A method is provided for exchanging an organizational scheme, such as a tag-based structural framework, that can be applied to data describing and containing information relating to Web service providers to facilitate creating, updating, and interpreting the data so that Web service providers are suitably presented to a user, depending on the user's country, language, locale, and the availability of Web service providers.

Abstract: An exposure apparatus projects a pattern of an original onto a substrate by a projection optical system to expose the substrate, wherein the projection optical system includes a mirror assembly, and the mirror assembly includes a first mirror member which has a first reflecting surface and is configured to bend an optical axis of the projection optical system, a second mirror member which has a second reflecting surface and is configured to bend the optical axis, a supporting mechanism configured to support the first mirror member and the second mirror member, and the supporting mechanism is positioned to position the first mirror member and the second mirror member while a positional relationship between the first mirror member and the second mirror member is maintained.

Abstract: Disclosed are an exposure method and apparatus, a coating apparatus and a device manufacturing method, wherein, in one preferred form, the exposure method is used to expose a resist having been applied onto a substrate by one of a plurality of resist coating units, and it includes a selecting step for choosing an exposure amount pattern that represents exposure amounts corresponding to a plurality of shots on the substrate, respectively, on the basis of a resist coating unit data that specifies which unit among the plurality of resist coating units should be used to apply a resist onto the substrate, and an exposure step for exposing the resist on the substrate in accordance with the exposure amount pattern chosen by the selecting step.

Abstract: A circulation system for a high refractive index liquid includes a first collecting section configured to collect a high refractive index liquid used in an immersion light exposure section; a first supply section configured to supply the high refractive index liquid collected in the first collecting section to a cleaning section as a cleaning liquid; a second collecting section configured to collect the high refractive index liquid used in the cleaning section; and a second supply section configured to supply the high refractive index liquid collected in the second collecting section to the immersion light exposure section, wherein the high refractive index liquid is circulated between the immersion light exposure section and the cleaning section.

Abstract: Apparatus for processing substrates according to a predetermined photolithography process includes a loading station in which the substrates are loaded, a coating station in which the substrates are coated with a photoresist material, an exposing station in which the photoresist coating is exposed to light through a mask having a predetermined pattern to produce a latent image of the mask on the photoresist coating, a developing station in which the latent image is developed, an unloading station in which the substrates are unloaded and a monitoring station for monitoring the substrates with respect to predetermined parameters of said photolithography process before reaching the unloading station.

Abstract: In immersion exposure, a resist pattern forming method suppressing resist pattern defects comprises mounting a substrate formed a resist film thereon and a reticle formed a pattern thereon onto an exposure apparatus, supplying a first chemical solution onto the resist film to selectively form a first liquid film in a local area on the resist film and draining the solution, the first liquid film having a flow and being formed between the resist film and a projection optical system, transferring the pattern of the reticle to the resist film through the first liquid film to form a latent image, supplying a second chemical solution onto the resist film to clean the resist film, heating the resist film, and developing the resist film to form a resist pattern from the resist film.

Abstract: A lithographic apparatus is disclosed that includes a utility substrate storage configured to hold a utility substrate, and a utility substrate scheduling unit configured to schedule the loading of a utility substrate in a flow of substrates in the lithographic apparatus.

Abstract: In the present invention, a plurality of heat treatment plates are provided side by side in a linear form on a base of a heat treatment apparatus in a coating and developing treatment system. In the heat treatment apparatus, three transfer member groups are provided which transfer a substrate in zones between adjacent heat treatment plates. At the time when performing a pre-baking treatment in the heat treatment apparatus, the substrate is transferred in order to the heat treatment plates at the same temperature, whereby the heat treatment is dividedly performed on the heat treatment plates. According to the present invention, substrates are subjected to heat treatment along the same route, so that the thermal histories are made uniform among the substrates.

Abstract: A coating and developing apparatus has: a treatment block-including a water repellent module performing water repellent treatment on a substrate, a coating module, and a developing module; a substrate side-surface portion water repellent module for performing water repellent treatment on a side surface of a substrate; and a control unit controlling operations of the modules to execute steps of performing water repellent treatment at least on a side surface portion of a substrate and performing a first resist coating on an entire surface of the substrate; performing a first development after a first liquid-immersion exposure is performed; performing a second resist coating on the entire surface, and performing a second development after a second liquid-immersion exposure is performed, and further to execute a step of performing water repellent treatment on the side surface portion of the substrate after the first development and before the second exposure is performed.

Abstract: A lithography apparatus includes a resist processing apparatus to perform a process of applying a resist on a substrate, a process of heating a resist film on the substrate, and a process of developing the resist film on the substrate, an immersion exposure apparatus including a projection optical system which projects an image of a pattern on a photomask onto the resist film and configured to perform exposure through liquid located on an optical path between the projection optical system and resist film, a transporting apparatus connected to the resist processing and immersion exposure apparatuses to perform transportation of the substrate between the resist processing and immersion exposure apparatuses, and a temperature/humidity control apparatus configured to control at least one of temperature and humidity in at least one of the resist processing and transporting apparatuses based on temperature and humidity or the in humidity the immersion exposure apparatus.

Abstract: The present disclosure provides a lithography apparatus. The apparatus includes an exposure module designed for exposure processing; a baking module embedded in the exposure module and designed for post exposure baking (PEB); and a control module designed to control the exposure module and the baking module.

Abstract: A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

Abstract: A method and system for treating a substrate are provided. The system includes a coating unit, a pre/post-exposure treatment unit, and a developing unit. Each of the units includes a load port and an index module. The pre/post-exposure treatment unit includes first and second modules that are arranged in different layers. The first module performs a process for coating a protective layer on the wafer before an exposure process. The second module performs a process for cleaning the wafer and a post-exposure bake process after the exposure process.

Abstract: A method of determining temperatures at localized regions of a substrate during processing of the substrate in a photolithography process includes the following steps: independently illuminating a photoresist layer including a photoresist pattern at a plurality of locations on the substrate with a light source, so that light is diffracted off the plurality of locations of the photoresist pattern; measuring the diffracted light from the plurality of locations to determine measured diffracted values associated with respective locations from the plurality of locations; and comparing the measured diffracted values against a library to determine a pre-illumination process temperature of the photoresist layer at the plurality of locations.

Abstract: A resist film formed on a substrate is coated with a water-repellent protective film and the substrate is subjected to a developing process after the substrate has been processed by an immersion exposure process. The protective film is removed from the substrate after the resist film has been processed by the immersion exposure process, the substrate is processed by a heating process, and then the substrate is subjected to a developing process. The surface of the substrate is cleaned with a cleaning liquid before the protective film is removed and after the substrate has been processed by the immersion exposure process or the surface of the substrate is cleaned with a cleaning liquid after removing the protective film and before the substrate is subjected to the heating process.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, and an interface block. An exposure device is arranged adjacent to the interface block. A resist film is formed on a substrate in the resist film processing block. A resist cover film is formed on the resist film in the resist cover film processing block before the substrate is subjected to exposure processing by the exposure device.

Abstract: A substrate processing apparatus comprises an interface block. An exposure device is arranged adjacent to the interface block. The interface block comprises first and second cleaning/drying processing units. A substrate W is subjected to cleaning and drying processing before exposure processing in the first cleaning/drying processing unit, while being subjected to cleaning and drying processing after the exposure processing in the second cleaning/drying processing unit.

Abstract: A substrate processing apparatus enables an efficient collection of a solvent vapor discharged via a nozzle onto a wafer on which a resist pattern is formed. A retaining base that retains the wafer is moved relative to the nozzle, which includes a nozzle head. A pair of leakage preventing portions are disposed opposite to each other across the nozzle head. Each of the leakage preventing portions has an opening via which the solvent vapor discharged out of the discharge opening can be sucked, or a solvent vapor blocking gas can be discharged selectively. A solvent vapor supply source and a gas supply source are switchably connected to the supply opening of the nozzle head via a first switching valve. An exhaust pump and a solvent-vapor-blocking gas supply source are switchably connected to the openings of the leakage preventing portions via a second switching valve.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, and an interface block. An exposure device is arranged adjacent to the interface block. The interface block includes a substrate replacement group. The substrate replacement group has a stack of three cleaning/drying processing units. The cleaning/drying processing unit subjects the substrate after exposure processing to cleaning and drying processing.

Abstract: An exposure apparatus is equipped with a main controller that decides an operation of the exposure apparatus based on information on maintenance from a C/D. Therefore, the main controller can decide to perform a specific operation, which is necessary for maintaining performance of the exposure apparatus and requires stop of the primary operation of the exposure apparatus, during maintenance of the C/D, that is, when the primary operation of the exposure apparatus has to be stopped by necessity, in parallel with the maintenance of the C/D. As a consequence, downtime of the exposure apparatus necessary for performing the specific operation can be decreased as a whole, which makes it possible to improve the operating rate without lowering apparatus performance of the exposure apparatus that is inline connected to a substrate processing apparatus.

Abstract: A rework station and a metrology device(s) are incorporated into a lithographic processing cell so that a faulty substrate can be reworked directly and reprocessed without, for example, an overhead involved in changing masks, etc.

Abstract: This invention relates to a method and apparatus for thermally developing a photosensitive element. The thermal development method includes heating the photosensitive element to a temperature sufficient to cause a portion of a composition layer in the element to liquefy, soften, or melt; supporting a development medium with a non-rotating surface to provide contact of the development medium with the heated photosensitive element; and providing relative movement between the development medium and the non-rotating surface.

Abstract: Disclosed herein is a coating and developing apparatus 1 whose decreases in substrate-conveying accuracy can be suppressed. A processing block S2 of the coating and developing apparatus 1 includes multiple resist-film forming blocks G2, G3, and a developing block G1. A conveyance element 12 for substrate loading into the processing block S2 is provided to convey substrates W from a carrier C to the resist-film forming blocks G2, G3. Also, a conveyance element I for substrate loading into an exposure apparatus S4 is provided in an interface block S3 to load the substrates W into the exposure apparatus S4 and after unloading the substrates W from the exposure apparatus S4, convey the substrates W to the developing block G1.

Abstract: An object of the present invention is to provide a simple method for treatment of a washing waste liquid, which enhances the flocculation effect and also enhances filtration characteristics of a flocculated washing waste liquid in a flocculation treatment of a washing waste liquid generated in processing a photosensitive lithographic printing plate. Disclosed is a method for treatment of a washing waste liquid generated in a processing apparatus of a photosensitive lithographic printing plate, which comprises (1) adding a cationic polymer flocculant to the washing waste liquid, then (2) adding an anionic polymer flocculent, followed by (3) filtration.

Abstract: A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

Abstract: A developing apparatus includes, to process substrates each coated with a resist and processed by an exposure process by a developing process, includes: plural developing units each provided with a substrate holding device for stably pouring a developer onto the substrate, a first developer nozzle to be used in common by the plural developing units to pour the developer in a band-shaped flow onto the substrates held by each of the substrate holding devices, a nozzle driving mechanism for carrying the first developer nozzle from one to another of the developing units, and moving the first developer nozzle with one end of a band-shaped area into which the developer is to be poured through the first developer nozzle directed toward the center of the substrate in each of the developing units such that a part in a surface of the substrate onto which the developer is poured moves from a central part toward a peripheral part or from a peripheral part toward a central part in the surface of the substrate to coat the

Abstract: A processing block S2 includes unit blocks, a BCT layer B3, COT layer B4 and TCT layer B5, for forming coating films, and further includes DEV layers B1, B2 layered with the unit blocks B3, B4, B5 and used as unit blocks for a developing process. Beside the unit blocks B1 to B5, a group G of transfer sections comprising transfer sections adapted to transfer each wafer W with each main arm A1 to A5 of the unit block B1 to B5 and hydrophobicity rendering units adapted to provide a hydrophobicity rendering process to the wafer W is provided. The wafer W is transferred by a transfer arm D between the transfer sections and the hydrophobicity rendering units. In this case, since it is not necessary to transfer the wafer W to the hydrophobicity rendering unit by using, for example, a main arm A4 of a COT layer B4, the load on the arm A4 can be reduced, thereby enhancing the carrying throughput.

Abstract: An interface transport mechanism uses an upper hand when transporting a substrate from a substrate platform to an exposure device before exposure processing by an exposure device, and uses a lower hand when transporting the substrate from the exposure device to the substrate platform after the exposure processing by the exposure device. That is, the lower hand is used to transport a substrate to which a liquid is attached after exposure processing, and the upper hand is used to transport a substrate to which no liquid is attached before exposure processing.