Abstract: An apparatus and method for detecting extreme ultraviolet (EUV) radiation is disclosed. The apparatus includes a detector having a top surface, a layer of scintillation material on the top surface of the detector, a layer of spacer material on the layer of scintillation material, and a spectral purity filter layer on the layer of spacer material. The method includes directing the EUV radiation through the spectral purity filter layer and through the spacer material layer. The spacer material layer may be disposed between the spectral purity filter layer and a layer of scintillation material. The method further includes detecting scintillation radiation emitted by the scintillation material using the detector.

Abstract: An exposure apparatus for forming a predetermined pattern on a substrate by using exposure light, includes a stage apparatus which is movable with respect to an optical axis of the exposure light; a light-transmissive member provided at the stage apparatus, wherein a liquid is supplied on an upper surface of the light-transmissive member; and a measurement device which is settable below the light-transmissive member when measurement using the measurement device is performed. Leakage or entrance of a liquid used for exposure into an optical measurement device such as a wavefront aberration measurement device can be prevented, thereby enabling preferable optical adjustment such as imaging performance or optical characteristics.

Abstract: A method for alignment processing including making a substrate 4, coated with an aligned film, closely face the photo mask 7 having a first mask pattern group having a plurality of elongated first openings formed at a fixed array pitch and a second mask pattern group provided in parallel with the first mask pattern group and having a plurality of elongated second openings formed at the same pitch as the array pitch of the first openings and moving the substrate in a direction crossing the first and second mask pattern groups, applying P polarizations with different incidence angles ? to the first and second mask pattern groups of the photo mask, and alternately forming, on the aligned film, first and second slit alignment regions in different aligned states.

Abstract: A position measurement system includes a first part and a second part for determining a position of a first member relative to a second member by providing a position signal representing a position of the first part relative to the second part, and a computational unit comprising an input terminal for receiving the position signal. The computational unit is configured to, in use, apply a conversion to the position signal to obtain a signal representing a position of the first member relative to the second member; and apply an adjustment to the conversion to at least partly compensate for a drift of the first part or the second part or both. The adjustment is based on a predetermined drift characteristic of the first part or the second part or both respectively. The predetermined drift characteristic includes one or more base shapes of the first part and/or the second part.

Abstract: In a lithographic projection system, a corrective optic in the form of one or more deformable plates is mounted within telecentric image or object space for making one-dimensional or two-dimensional adjustments to magnification. The deformable plate, which can be initially bent under the influence of a preload, contributes weak magnification power that influences the magnification of the projection system by changing the effective focal length in object or image space. An actuator adjusts the amount of curvature through which the deformable plate is bent for regulating the amount of magnification imparted by the deformable plate.

Abstract: An exposure apparatus includes a first optical member from which an exposure beam is emitted; a first object movable at a light-exit side of the first optical member; a second object movable, independently of the first object, at the light-exit side of the first optical member; and a driving unit that moves the first object and the second object in a first direction within a predetermined plane including a first position opposing the first optical member in a state in which the first object and the second object are close to or in contact with each other and in which positions of the first object and the second object in a second direction within the predetermined plane are shifted.

Abstract: A source-collector device is constructed and arranged to generate a radiation beam, The device includes a target unit constructed and arranged to present a target surface of plasma-forming material; a laser unit constructed and arranged to generate a beam of radiation directed onto the target surface so as to form a plasma from said plasma-forming material; a contaminant trap constructed and arranged to reduce propagation of particulate contaminants generated by the plasma; a radiation collector comprising a plurality of grazing-incidence reflectors arranged to collect radiation emitted by the plasma and form a beam therefrom; and a filter constructed and arranged to attenuate at least one wavelength range of the beam.

Abstract: A design method of extreme ultraviolet lithography projection objective comprises: determining the optical design parameters of the lithography projection objective, setting the projection objective to include six lenses and an aperture diaphragm, and dividing the six lenses into the three groups according to the beam propagation direction; determining the radii and the intervals of the first and third groups, respectively; and determining the radii and the intervals of the second group of lenses according to the parameters of the foregoing two groups of lenses. The design method has the advantage of avoiding the blindness in revising and error testing of the existing structure of the conventional optical design method by calculating lens structures that meet the parameter conditions, so that light rays can be selected conveniently according to the special requirements of optical processing detection, and a mass of searches and judgments can be avoided.

Abstract: The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n<1. The method includes providing a pattern generator having a first pixel size S1 to generate an alternating data grid having a second pixel size S2 that is <S1, wherein the pattern generator includes multiple grid segments configured to offset from each other in a first direction; and scanning the pattern generator in a second direction perpendicular to the first direction during the lithography process such that each subsequent segment of the grid segments is controlled to have a time delay relative to a preceding segment of the grid segments.

Abstract: Methods and apparatuses for performing the same, where the methods include obtaining, from an interferometer, a time-varying interference signal S(t) based on a combination of a first beam and a second beam, the first beam being diffracted from an encoder scale, in which at least one of the encoder scale and the interferometer is moveable with respect to the other, obtaining one or more error correction signals based on one or more errors that modify the time-varying interference signal S(t), and outputting information about a change in a position of the encoder scale relative to the interferometer based on the time-varying interference signal S(t) and the one or more error correction signals.

Abstract: A method for controlling a multi-stage system includes a stator extending parallel to a first direction; a first and second stage that are moveable relative to the stator; the stages being provided with a magnet system to generate a magnetic field, and the stator being provided with coils to interact with the magnetic fields to position the stages relative to the stator, the method including: determining the position of the stages; selecting a first and a second subset of coils that are capable of having a non-negligible interaction with the magnetic field of respectively the first and the second stage; activating the coils of both subsets, wherein activating the coils includes determining the coils that are part of both subsets; and excluding a coil that is part of both subsets from activating.

Abstract: A method for monitoring the source symmetry of a photolithography system is provided. The method includes providing a first reticle; and providing a second reticle. The method also includes forming first bottom overlay alignment marks on a first wafer using the first reticle; and forming first top overlay alignment marks on the first bottom overlay alignment marks using the second reticle. Further, the method includes forming second bottom overlay alignment marks on a second wafer using the first reticle; and forming second top overlay alignment marks on the second bottom overlay alignment marks using the second reticle. Further, the method also include measuring a first overlay shift; measuring a second overlay shift; and obtaining an overlay shift caused by the source asymmetry based on the first overlay shift and the second overlay shift.

Abstract: The present invention provides an exposure apparatus which exposes each of a plurality of shot regions on a substrate, comprising a substrate stage configured to be movable while holding the substrate, and a control unit, wherein the plurality of shot regions include a first shot region, and a second shot region which is exposed next to the first shot region, and the control unit drives the substrate stage in accordance with drive information of the substrate stage in a period until exposure of the second shot region starts after an end of exposing the first shot region, and when an exposure condition for exposing the second shot region is not satisfied in the period, the control unit drives again the substrate stage in accordance with the drive information and then exposes the second shot region.

Abstract: A computer-implemented calculation method of calculating a transmission cross coefficient in an apparatus which projects an image of an object onto an image plane via a projection optical system includes: a division step of dividing an effective light source formed on a pupil plane of the projection optical system into a plurality of point sources, a defining step of defining a matrix by arranging each of the plurality of pupil functions generated in the generation step in each row or each column of the matrix, and a calculation step of calculating the transmission cross coefficient based on the matrix defined in the defining step.

Abstract: A method for manufacturing a device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective exposure field; determining an absolute position of each exposure field from the alignment information for the respective exposure field; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields.

Abstract: A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n?), p(n?) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.

Abstract: A method of manufacturing a semiconductor device in which the alignment accuracy of an immersion exposure device is maintained even when exposure steps are carried out intermittently. In the method, a substrate is placed on a stage of an exposure device (substrate placing step). Then, a first liquid is supplied to between the substrate and the optics system of the exposure device to expose the substrate through the first liquid (exposure step). A second liquid is supplied from a different place from the first liquid to a drainage groove provided around the stage at least in a period other than when the first liquid is supplied onto the stage, in order to suppress change in the temperature of the exposure device.

Abstract: A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LPA, LPB) for exposure field regions (EFA, EFB) in accordance with surface level measurements (LSA, LSB) having level sensing locations corresponding to the respective exposure field region. Exposing exposure field regions (EFA, EFB) with focus offsets (FO1, FO2) defined with reference to the respective focus settings (LPA, LPB) to produce target patterns at respective target locations. Obtaining focus-dependent property measurements, such as Critical Dimension (CD) and/or side wall angle (SWA) of the target patterns measured using the inspection apparatus; and calibrating the inspection apparatus using the focus-dependent property measurements (CD/SWA) and the respective focus offsets (FO1, FO2). The calibration uses surface level measurements (e.g., LSB(3)) having a level sensing location (e.g.

Abstract: A lithographic apparatus is disclosed that includes a support constructed to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam and a substrate table constructed to hold a substrate. Further, the lithographic apparatus includes a projection system configured to project the patterned radiation beam onto a target portion of the substrate, the projection system being mounted to a reference element of the lithographic apparatus by a resilient mount to reduce a transfer of high frequency vibration from the reference element to the projection system and a control system to counteract a position error of the substrate table and the support relative to the projection system.

Abstract: An actuator system is disclosed having a first actuator (XP1) and a second actuator (XP2) configured to control a relative position of optical components of a lithographic apparatus. The first actuator (XP1) is configured to provide a displacement, parallel to an actuation direction, between a mounting point of a first component of the lithographic apparatus and a second component of the lithographic apparatus. The second actuator (XP2) is configured to provide a displacement parallel to the actuation direction between a reference mass (M1) associated with the second actuator (XP2) and the mounting point of the first component of the lithographic apparatus. The second actuator (XP2) may be driven such that the displacement between the second actuator (XP2) and the reference mass (M1) increases the apparent stiffness of the first actuator (XP1).

Abstract: The present invention provides a stage apparatus including a first Y-axis interferometer which is supported by a base portion, and configured to detect a position of a first end surface of a table in a Y-axis direction, a second Y-axis interferometer which is supported by the base portion, and configured to detect a position of a second end surface of the table in the Y-axis direction, and a third Y-axis interferometer which is supported by the base portion so as to be spaced apart from the first Y-axis interferometer and the second Y-axis interferometer in an X-axis direction, and configured to detect a distance according to which a distance between the first Y-axis interferometer and the second Y-axis interferometer in the Y-axis direction can be obtained.

Abstract: A projection objective of a microlithographic projection exposure apparatus contains a plurality of optical elements arranged in N>?2 successive sections A1 to AN of the projection objective which are separated from one another by pupil planes or intermediate image planes. According to the invention, in order to correct a wavefront deformation, at least two optical elements each have an optically active surface locally reprocessed aspherically. A first optical element is in this case arranged in one section Aj, j=1 . . . N and a second optical element is arranged in another section Ak, k=1 . . . N, the magnitude difference |k?j| being an odd number.

Abstract: A method for positioning a substage, supported by a main stage, relative to a reference object, the substage moveable in a direction between a first and second position relative to the main stage. The method includes positioning the first stage using a passive force system that is activated by positioning the main stage. The passive force system includes two magnet systems, each magnet system being configured to apply a force in the direction to the first stage with respect to the second stage in a non-contact manner, the forces resulting in a resultant force applied to the first stage in the direction by the passive force system. A magnitude and/or a direction of the resultant force depends on the position of the first stage relative to the second stage, and the first stage has a zero-force position between the first and second position in which the resultant force is zero.

Abstract: A apparatus having a projection system to project a plurality of radiation beams onto a substrate, wherein the plurality of radiation beams includes a first group of one or more radiation beams formed from radiation within a first wavelength range and a second group of one or more radiation beams formed from radiation within a second wavelength range, different from the first wavelength range. The apparatus also has a dispersion element configured such that one or more radiation beams of the first group are incident on the dispersion element at a different angle from the one or more radiation beams of the second group and such that the one or more radiation beams of the first and second group output from the dispersion element are substantially parallel.

Abstract: An exposure apparatus that exposes a substrate includes: an optical system that includes an emission surface from which an exposure light is emitted; a first surface that is disposed in at least a part of a surrounding of an optical path of the exposure light emitted from the emission surface; a second surface that is disposed in at least a part of a surrounding of the first surface and at a position lower than the first surface; a space portion into which a liquid can flow via a first aperture between the first surface and the second surface and which is opened to the atmosphere via a second aperture different from the first aperture; and a first recovery portion that recovers at least a part of the liquid flowing into the space portion.

Abstract: A liquid immersion scanning exposure system utilizes an immersion liquid confined within a watertight lens hood having a base portion formed from a solid optical element. During operation, a bottom portion of a lens assembly is disposed within the immersion liquid and the solid optical element is placed upon a photoresist material or layer (to be patterned). The lens assembly moves laterally through the immersion liquid parallel to the photoresist material. Because the solid optical element separates the immersion liquid from the photoresist material and does not move relative to the photoresist material, the photoresist material does not contact with the immersion liquid and the solid optical element and is not susceptible to damage or scratching by the solid optical element.

Abstract: An exposure method and apparatus exposes a substrate via a projection optical system and a liquid. The liquid is circulated in a circulation path. At least a part of the liquid in the circulation path is supplied through a discharge path to a space below the projection optical system, the discharge path being connected to the circulation path. The substrate is exposed via the projection optical system and the liquid.

Abstract: A lithographic apparatus comprises an object table for receiving an object, an actuator for moving the object table and a handler for transferring the object to or from the object table. The apparatus is provided with a controller operable connected with the actuator and/or the handler. The controller is programmed and/or arranged to drive the actuator and the handler so as to provide that the object table and the handler substantially follow each other in a direction perpendicular to a transfer direction during transfer in the transfer direction of the object to or from the object table.

Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Abstract: A stage device includes a base and a stage movable portion that is movable along a surface of the base. An interferometer measures a position of the stage movable portion using measurement light. At least one of a piping element and a wiring element are connected to the stage movable portion. An auxiliary member, including a plurality of members connected with each other along an axial direction of the piping element, guides a bend of the at least one of the piping element and the wiring element. A plurality of heat insulating sheets are supported by the plurality of members of the auxiliary member. The plurality of heat insulating sheets are provided between a space through which the measurement light of the interferometer passes, and the at least one of the piping element and the wiring element.

Abstract: A radiation source for generating EUV from a stream of molten metal fuel droplets by LPP (Laser Produced Plasma) or (Dual Laser Plasma) has a fuel droplet generator arranged to provide a stream of droplets of fuel and at least one laser configured to vaporise at least some of said droplets of fuel, whereby radiation is generated. The fuel droplet generator has nozzle, fuel supply line, and reservoir, with a pumping device arranged to supply a flow of molten metal fuel from the reservoir through the fuel feed line and out of the nozzle as a stream of droplets. The fuel droplet generator has a replaceable filter assembly in the fuel feed line, arranged to filter the molten metal fuel in use, to deter nozzle blockage by solid particulate impurities in the fuel.

Abstract: An exposure apparatus is provided with a nozzle member that has at least one of a supply outlet which supplies the liquid and a collection inlet which recovers the liquid. By immersing the nozzle member in cleaning liquid LK stored in container, the nozzle member is cleaned.

Abstract: Provided herein are a method and apparatus for the formation of conductive films on a substrate using precise sintering of a conductive film and thermal management of the substrate during sintering. In particular, a method may include depositing a conductive metal-based ink on a translucent or transparent substrate, positioning a mask between the deposited conductive metal-based ink and a light source, exposing the mask and the underlying deposited conductive metal-based ink to the light source, sintering the conductive metal-based ink exposed to the light source, and cleaning the non-sintered conductive metal-based ink from the translucent or transparent substrate. The mask may be configured to shield at least a portion of the conductive metal-based ink from the light source. The portion of the conductive metal-based ink shielded from the light source may remain non-sintered in response to the sintering of the conductive metal-based ink exposed to the light source.

Abstract: A projection exposure apparatus for microlithography for the production of semiconductor components includes at least one optical assembly with at least one optical element which can be actuated in a mechanically controlled manner is mounted in a structure. For carrying out the mechanical actuation, a control signal transmission device and/or an energy transmission device are/is provided, which introduce(s) no parasitic mechanical effects into the optical assembly at least during specific operating states of the projection exposure apparatus.

Abstract: The current invention relates to writing or reading a pattern on a surface, such as in microlithography or inspection of mircrolithographic patterns. In particular, Applicant discloses systems recording or reading images by scanning sparse 2D point arrays or grids across the surface, e.g., multiple optical, electron or particle beams modulated in parallel. The scanning and repeated reading or writing creates a dense pixel or spot grid on the workpiece. The grid may be created by various arrays: arrays of light sources, e.g., laser or LED arrays, by lenslet arrays where each lenslet has its own modulator, by aperture plates for particle beams, or arrays of near-field emitters or mechanical probes. For reading systems, the point grid may be created by a sparse point matrix illumination and/or a detector array where each detector element sees only one spot. The idea behind the use of large arrays is to improve throughput.

Abstract: A manifold is provided between an outlet of a fluid supply system for an immersion lithographic apparatus and a separator. The manifold is provided with a pressure sensor which passes the measured pressure in the manifold to a mass flow controller. The mass flow controller controls a leak flow into the manifold based on the measured pressure in the manifold so as to maintain a desired pressure in the manifold.

Abstract: An illumination system having an array of individually controllable optical elements is disclosed, wherein each element is moveable between a plurality of orientations which may be selected in order to form desired illumination modes. The illumination system includes a controller to control orientation of one or more of the elements, the controller configured to apply force to the one or more elements which at least partially compensates for force applied to the one or more elements by a burst of radiation incident upon the one or more elements.

Abstract: In order to exposure interference fringes to photoresist and form a desired irregular pattern, it is necessary to know the cycle of the interference fringes in advance. In order to confirm the cycle of the interference fringes beforehand, conventional techniques include observing the formed irregular pattern with the use of a microscope or measuring a diffraction angle of incident light and repeating processes of exposure, development, and observation (measurement) while slightly changing incident angles of light fluxes for the formation of the interference fringes until a desired cycle is confirmed. These operations take considerable amount of time. The fact that it takes considerable amount of time to confirm the interference fringes has not been considered in the conventional techniques. Observation of a moire generated by a standard sample containing a fluorescent sample that can be repeatedly used and adjustment of the cycle of interference fringes reduce time for the adjustment.

Abstract: An exposure apparatus exposes a substrate with an exposure beam via a projection system supported by a frame. A substrate stage having a table that mounts the substrate is placed on a base under the projection system. A measurement device has a plurality of heads provided at the table and each irradiate a measurement beam on a grating section supported by the frame, and measures positional information of the table by a head of the plural heads, that faces the grating section. A drive device drives the substrate stage to move the substrate. A controller controls a drive of the substrate stage based on displacement information of a head used in measurement of the positional information or correction information to compensate a measurement error of the measurement device that occurs due to a displacement of the head, and based on the positional information measured by the measurement device.

Abstract: A position detector (16), configured to detect a position of a mark on an object to be detected, comprises an image pickup unit (34), an optical system, a noise obtaining unit (36) and a correction unit (38). The image pickup unit picks up an image of the object to be detected. The optical system forms an image of the object to be detected on an image pickup surface of the image pickup unit. The noise obtaining unit obtains noise information by picking up an image of a region other than the mark using the optical system and the image pickup unit in accordance with the result of adjustment of an optical member included in the optical system. The correction unit corrects, using the noise information obtained by the noise obtaining unit, the image of the mark obtained using the optical system and the image pickup unit.

Abstract: The present invention provides a holding apparatus for holding a substrate by an electrostatic force, the apparatus including a base including an electrode for generating the electrostatic force, a plurality of pins provided on the base, and a seal provided on the base and configured to seal a first space surrounding the plurality of pins, wherein a cavity and a first hole connecting the cavity and the first space is formed in the base, wherein a gas is sealed in the first space, the first hole and the cavity in a vacuum by holding the substrate on the pins and the seal by the electrostatic force.

Abstract: An apparatus includes an optical system configured to irradiate a surface of a substrate with a beam, a control unit configured to control a position of the irradiation of the beam, and a first measurement unit and a second measurement unit each configured to measure a position of a mark formed on the substrate. The second measurement unit is placed at a position closer to an optical axis of the optical system than the first measurement unit is. Based on a position measurement value measured by the first measurement unit and position measurement values measured at different timings by the second measurement unit, the control unit controls the position of the beam irradiated to the substrate. The position measurement values measured at the different timings are values obtained from the same mark or values obtained from two marks adjacent to a common shot area.

Abstract: The present invention provides an imprint method comprising a deformation step of deforming a pattern surface of a mold so that the mold is gradually brought into contact with the imprint material outward from a central portion of the pattern surface, an obtaining step of obtaining a shift amount indicating how much a mark on the mold shifts in a direction parallel to a substrate surface due to deformation of the pattern surface, a detection step of detecting the mark on the mold and a mark on the substrate while the pattern surface is deformed, and obtaining relative positions of the mold and the substrate from a detection result, and an alignment step of aligning the mold and the substrate using the shift amount and the relative positions while the pattern surface is deformed.

Abstract: A method for inspecting a spatial light modulator includes: performing such control that in an inspection target area in an array of mirror elements, the mirror elements in a first state in which incident light is given a phase change amount of 0 and the mirror elements in a second state in which incident light is given a phase change amount of 180° (?) become arrayed in a checkered pattern; guiding light having passed the inspection target area to a projection optical system with a resolution limit coarser than a width of an image of one mirror element, to form a spatial image; and inspecting a characteristic of the spatial light modulator from the spatial image. This method allows us to readily perform the inspection of the characteristic of the spatial light modulator having the array of optical elements.

Abstract: Apparatus are disclosed for measuring the position of an object surface along an axis. An exemplary apparatus has at least one actuator coupled to a fixed member such as a metrology frame. At least one analog proximity sensor is coupled to the at least one actuator. The at least one actuator is controllably operated to position the at least one proximity sensor at a fixed distance along the axis from a surface that is fixed relative to the fixed me+mber. A controller, coupled to the actuator and to the proximity sensor, is configured to compute a position of the object surface along the axis based on a known location of the fixed surface along the axis, the fixed distance from the fixed surface, and position signals from the at least one proximity sensor.

Abstract: A collector system for extreme ultraviolet (EUV) radiation includes a collector mirror and a radiation-collection enhancement device (RCED) arranged adjacent an aperture member of an illuminator. The collector mirror directs EUV radiation from an EUV radiation source towards the aperture member. The RCED redirects a portion of the EUV radiation that would not otherwise pass through the aperture of the aperture member or that would not have an optimum angular distribution, to pass through the aperture and to have an improved angular distribution better suited to input specifications of an illuminator. This provides the illuminator with greater amount of useable EUV radiation than would otherwise be available from the collector mirror alone, thereby enhancing the performing of an EUV lithography system that uses such a collector system with a RCED.

Abstract: An exposure method for exposing a mask pattern, which includes plural types of patterns, with a high throughput and optimal illumination conditions for each type of pattern. The method includes guiding light from a first spatial light modulator illuminated with pulse lights of illumination light to a second spatial light modulator and exposing a wafer with light from the second spatial light modulator, accompanied by: controlling a conversion state of the second spatial light modulator including a plurality of second mirror elements; and controlling a conversion state of the first spatial light modulator including a plurality of first mirror elements to control intensity distribution of the illumination light on a predetermined plane between the first spatial light modulator and the second spatial light modulator.

Abstract: A liquid immersion exposure apparatus that exposes a substrate via a projection optical system and liquid includes a movable member having an upper surface, a part of which holds the substrate. A liquid immersion system that has a supply port and a recovery port supplies the liquid to a space between the projection optical system and the upper surface via the supply port of a supply path and recovers the liquid of a liquid immersion region formed in the space via the recovery port of a recovery path. A flow path is connected to the supply path between the supply port and a source of the liquid, the flow path permitting flow therethrough to remove liquid that remains in the supply path, the liquid that remains in the supply path having been supplied from the source of the liquid without being discharged from the supply port.

Abstract: A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.