Pinning Patents (Class 361/234)
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Patent number: 10840119Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate has first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer has a first surface at the first major surface side and a second surface at a side opposite to the first surface. The first electrode layer includes a first portion including the first surface. The first electrode layer includes a ceramic component and a metal component. A concentration of the ceramic component in the first portion is higher than an average concentration of the ceramic component in the first electrode layer.Type: GrantFiled: March 20, 2020Date of Patent: November 17, 2020Assignee: Toto Ltd.Inventors: Hitoshi Sasaki, Yutaka Momiyama
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Patent number: 10822712Abstract: An electroplating apparatus includes a substrate, a seed layer provided on a top surface of the substrate, a high-voltage portion provided on a bottom surface of the substrate, a housing sealing the high-voltage portion, an anode structure spaced apart from the seed layer in a direction perpendicular to the top surface of the substrate, first power source generating a first voltage difference between the seed layer and the anode structure, and a second power source applying a second voltage to the high-voltage portion. A positive terminal of the first power source is electrically connected to the anode structure, and a negative terminal of the first power source is electrically connected to the seed layer.Type: GrantFiled: September 5, 2017Date of Patent: November 3, 2020Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventor: Woo-Seok Cheong
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Patent number: 10818480Abstract: In an embodiment, there is provided a method of operating an electrostatic chuck of a plasma processing apparatus. The electrostatic chuck has a base, a dielectric layer formed on the base, and a chuck main body mounted on the dielectric layer. In the method, a temperature difference between the temperature of the base and the temperature of the chuck main body is reduced in a state in which the chuck main body is attracted to the dielectric layer with a relatively small electrostatic attractive force. In a case where the temperature difference between the temperature of the base and the temperature of the chuck main body becomes equal to or less than a predetermined value, the chuck main body is fixed to the base via the dielectric layer by a relatively large electrostatic attractive force.Type: GrantFiled: May 23, 2018Date of Patent: October 27, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Akiyoshi Mitsumori, Shin Yamaguchi
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Patent number: 10804072Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.Type: GrantFiled: June 11, 2018Date of Patent: October 13, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Chishio Koshimizu, Naoki Matsumoto, Satoshi Tanaka, Toru Ito
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Patent number: 10790121Abstract: Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. The apparatus for reduced particle contamination includes a chamber body, a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip. To avoid depositing the particles on the substrate being processed when the plasma is de-energized, the edge ring shifts the high plasma density zone away from the edge area of the substrate.Type: GrantFiled: April 6, 2018Date of Patent: September 29, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Bhaskar Kumar, Prashanth Kothnur, Sidharth Bhatia, Anup Kumar Singh, Vivek Bharat Shah, Ganesh Balasubramanian, Changgong Wang
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Patent number: 10784139Abstract: Embodiments of a substrate support pedestal and an electrostatic chuck incorporating same are disclosed herein. In some embodiments, a substrate support pedestal includes: a body having an upper surface and a lower surface opposite the upper surface; one or more chucking electrodes disposed within the body; a plurality of substrate support elements protruding from the upper surface to support a substrate; a hole disposed in the lower surface at a center of and partially through the body; a plurality of gas holes disposed in the upper surface proximate the center of the body, wherein the plurality of gas holes is disposed above and fluidly coupled to the hole; and a plurality of gas distribution grooves formed in the upper surface and fluidly coupled to the plurality of gas holes.Type: GrantFiled: December 12, 2017Date of Patent: September 22, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Bharath Swaminathan, Wei Wang
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Patent number: 10777442Abstract: Embodiments of a hybrid substrate carrier are provided herein. In some embodiments, a substrate carrier includes: a carrier ring having an inner ledge adjacent a central opening of the carrier ring; and a carrier plate having a diameter greater than central opening and configured to rest upon the inner ledge, wherein the carrier plate includes an electrode disposed beneath a support surface to electrostatically clamp a substrate to the support surface of the carrier plate.Type: GrantFiled: November 16, 2017Date of Patent: September 15, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Sriskantharajah Thirunavukarasu, Shoju Vayyapron, Anand Mahadev, Shankeerthan Kalyanasundaram, Eng Sheng Peh
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Patent number: 10770257Abstract: Examples of a substrate processing method include subjecting a substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate, measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate, and by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.Type: GrantFiled: July 20, 2018Date of Patent: September 8, 2020Assignee: ASM IP Holding B.V.Inventors: Yuko Kengoyama, Takashi Yoshida
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Patent number: 10766057Abstract: A method of cleaning a tool for forming a semiconductor device includes heating a wafer comprising a ceramic material to heat at least the ceramic material, positioning the heated wafer on an electrostatic chuck of a tool for forming a semiconductor device such that deposits located proximate the heated wafer are heated to vaporize at least some of the deposits, and removing the vaporized deposits from the tool. Related methods of forming semiconductor devices, related systems, and related cleaning wafers are disclosed.Type: GrantFiled: December 28, 2017Date of Patent: September 8, 2020Assignee: Micron Technology, Inc.Inventors: Ken Tokashiki, Gurtej S. Sandhu
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Patent number: 10741425Abstract: A substrate support includes a baseplate, a ceramic layer arranged on the baseplate, a bond layer arranged in a first gap between the baseplate and the ceramic layer, a channel formed through the baseplate, the bond layer, and the ceramic layer, and a plug arranged in the channel. The plug includes a lower portion arranged in the baseplate and an upper portion arranged in the ceramic layer. The lower portion includes a pocket and sidewalls surrounding the pocket. The upper portion extends below the ceramic layer and the first gap into the pocket, the sidewalls of the lower portion overlap the upper portion, and a second gap between the upper portion and the lower portion is located within the pocket of the lower portion below the first gap.Type: GrantFiled: February 22, 2017Date of Patent: August 11, 2020Assignee: LAM RESEARCH CORPORATIONInventors: Fangli Hao, Yuehong Fu, Zhigang Chen
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Patent number: 10732615Abstract: A system and method for minimizing the damage to the backside of a workpiece disposed on a platen during thermal transitions is disclosed. The system includes a controller that modulates the clamping voltage and backside gas pressure during the thermal transition. By modulating the clamping voltage, the workpiece may not be as tightly held to the platen at certain times, thus minimizing damage that may be caused by particles resident on the top surface of the platen. Furthermore, the modulation of the backside gas pressure still permits good thermal conductivity between the platen and the workpiece.Type: GrantFiled: October 30, 2017Date of Patent: August 4, 2020Assignee: Varian Semiconductor Equipment Associates, Inc.Inventor: Scott E. Peitzsch
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Patent number: 10727096Abstract: The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one of more modules in a modular process chamber according to the present disclosure.Type: GrantFiled: August 20, 2019Date of Patent: July 28, 2020Assignee: Applied Materials, Inc.Inventors: Andrew Nguyen, Yogananda Sarode Vishwanath, Tom K. Cho
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Patent number: 10720858Abstract: Providing a technique for suppressing dust generation at the time of attraction and detachment of an object to be attracted, and for enabling control the attraction force of the attraction device to be uniform. The attraction device of the present invention includes a main body part having attraction electrodes within a dielectric; and an attraction part for attracting a substrate, provided on a surface of the main body part at an attraction-side. The attraction part includes a contact support part that is in contact with, and supports the substrate and a non-contact part that is not in contact with the substrate. In the attraction part, the volume resistivity of the material of the contact support part is greater than the volume resistivity of the material of the non-contact part.Type: GrantFiled: September 29, 2017Date of Patent: July 21, 2020Assignee: ULVAC, INC.Inventors: Ken Maehira, Kou Fuwa
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Patent number: 10714372Abstract: The present disclosure generally relates to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide independent pulses of DC voltage through a switching system to electrodes disposed through the ESC substrate support, or to electrodes disposed on a surface of the ESC, or to electrodes embedded in the ESC substrate support. The switching system can independently alter the frequency and duty cycle of the pulsed DC voltage that is coupled to each electrode. During processing of the substrate, the process rate, such as etch rate or deposition rate, can be controlled independently in regions of the substrate because the process rate is a function of the frequency and duty cycle of the pulsed DC voltage. The processing uniformity of the process performed on the substrate is improved.Type: GrantFiled: September 20, 2017Date of Patent: July 14, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Thai Cheng Chua, Philip Allan Kraus, Travis Lee Koh, Christian Amormino, Jaeyong Cho
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Patent number: 10714373Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate including a sealing ring provided at a peripheral edge portion of the ceramic dielectric substrate, and an electrode layer including a plurality of electrode components. An outer perimeter of the ceramic dielectric substrate is provided to cause a spacing between the outer perimeter of the ceramic dielectric substrate and an outer perimeter of the electrode layer to be uniform. The spacing between the outer perimeter of the electrode layer and the outer perimeter of the ceramic dielectric substrate is narrower than a spacing of the electrode components. A width of the sealing ring is not less than 0.3 millimeters and not more than 3 millimeters. A width where the electrode layer overlaps the sealing ring is not less than ?0.7 millimeters and not more than 2 millimeters.Type: GrantFiled: October 19, 2017Date of Patent: July 14, 2020Assignee: Toto Ltd.Inventors: Kazuki Anada, Yuichi Yoshii, Takuma Wada
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Patent number: 10707055Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.Type: GrantFiled: November 16, 2018Date of Patent: July 7, 2020Assignee: Advanced Energy Industries, Inc.Inventors: Denis Shaw, Kevin Fairbairn, Daniel Carter
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Patent number: 10688750Abstract: The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.Type: GrantFiled: October 3, 2017Date of Patent: June 23, 2020Assignee: Applied Materials, Inc.Inventors: Vijay D. Parkhe, Roger Alan Lindley
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Patent number: 10685862Abstract: The present disclosure generally relates to apparatuses and methods that control RF amplitude of an edge ring. The apparatuses and methods include an electrode that is coupled to ground through a variable capacitor. The electrode may be ring-shaped and embedded in a substrate support including an electrostatic chuck. The electrode may be positioned beneath the perimeter of a substrate and/or the edge ring. As the plasma sheath drops adjacent the edge ring due to edge ring erosion, the capacitance of the variable capacitor is adjusted in order to affect the RF amplitude near the edge of the substrate. Adjustment of the RF amplitude via the electrode and variable capacitor results in adjustment of the plasma sheath near the substrate perimeter.Type: GrantFiled: December 29, 2016Date of Patent: June 16, 2020Assignee: Applied Materials, Inc.Inventor: James Rogers
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Patent number: 10679885Abstract: An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.Type: GrantFiled: June 13, 2018Date of Patent: June 9, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Wendell Glenn Boyd, Jr., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Patent number: 10664337Abstract: A component mounting system includes a component mounting line in which a plurality of processing devices are connected to constitute the component mounting line and a management device (management computer) connected to the component mounting line by a network, and each of the plurality of processing devices can be remotely operated via the network by an input unit of the management device. In this component mounting system, it is determined whether or not an error occurring in the processing device is a remote response error (ST1), and notification in a first notification pattern is performed (ST2) in a case where a type of the error is the remote response error (Yes in ST1) and notification in a second notification pattern is performed (ST3) in a case where the type of the error is not the remote response error (No in ST1) based on a result of the error type determination.Type: GrantFiled: January 11, 2017Date of Patent: May 26, 2020Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Tetsushi Oohori, Kenichiro Ishimoto, Atsushi Nakazono
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Patent number: 10665428Abstract: Disclosed is a plasma processing apparatus including: a processing container into which an electromagnetic wave for plasma excitation is supplied; a placing table provided inside the processing container and configured to place a workpiece thereon; a first coupling member inserted into each of a plurality of insertion portions formed in a part of a dielectric member that transmits the electromagnetic wave, among a plurality of members that constitute the placing table, and configured to couple the dielectric member and a member to be coupled; and a dielectric cap fitted to each of the plurality of insertion portions so as to cover the first coupling member and having a dielectric constant substantially equal to the dielectric constant of the dielectric member.Type: GrantFiled: February 1, 2017Date of Patent: May 26, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Michitaka Aita, Naoki Matsumoto
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Patent number: 10665435Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.Type: GrantFiled: August 12, 2019Date of Patent: May 26, 2020Assignee: Lam Research CorporationInventors: Daniel Arthur Brown, John Patrick Holland, Michael C. Kellogg, James E. Tappan, Jerrel K. Antolik, Ian Kenworthy, Theo Panagopoulos, Zhigang Chen
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Patent number: 10629853Abstract: An evaporation equipment includes a main chamber and at least one sub-chamber in communication with the main chamber by a valve. The sub-chamber includes a suction plate, a suction tube, and a fixing part. The suction tube passes through the fixing part and the suction plate. When the evaporation equipment evaporates a material on a depositing substrate, the suction tube adsorbs the depositing substrate to the suction plate, the depositing substrate is aligned with a mask plate, and the depositing substrate is fixed to the mask plate by the fixing part.Type: GrantFiled: June 22, 2017Date of Patent: April 21, 2020Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.Inventors: Cunjun Xia, Xin Zou
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Patent number: 10600623Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The second ring component has an inner thickness that is less than an outer thickness, and at least a portion of an upper surface of the second ring component is inwardly angled towards the ring first component. The adjustable tuning ring has an upper surface that contacts the lower surface of the second ring component. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and is configured to actuate the adjustable tuning ring such that the gap between the first ring component and the second ring component is varied.Type: GrantFiled: September 14, 2018Date of Patent: March 24, 2020Assignee: APPLIED MATERIALS, INC.Inventor: Yogananda Sarode Vishwanath
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Patent number: 10593521Abstract: Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.Type: GrantFiled: March 12, 2013Date of Patent: March 17, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Larry Frazier, Cheng-Hsiung Matthew Tsai, John C. Forster, Mei Po Yeung, Michael S. Jackson
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Patent number: 10593584Abstract: An electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C. to 750 C. The top surface may be sapphire. The top surface is attached to the lower portion of the electrostatic chuck using a braze layer able to withstand corrosive processing chemistries. A method of manufacturing an electrostatic chuck with a top surface adapted for Johnsen-Rahbek clamping in the temperature range of 500 C. to 750 C.Type: GrantFiled: November 2, 2016Date of Patent: March 17, 2020Assignee: Component Re-Engineering Company, Inc.Inventors: Brent Donald Alfred Elliot, Frank Balma, Michael Parker, Jason Stephens, Guleid Hussen
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Patent number: 10591194Abstract: A temperature control method is performed by a temperature control apparatus including a heat exchanger configured to exchange heat using a phase change of a refrigerant, a rotary pump configured to receive the refrigerant from the heat exchanger and fuse the refrigerant with oil contained inside the rotary pump, and an oil refrigerant separator configured to receive the refrigerant fused with the oil from the rotary pump and separate the refrigerant from the oil. The temperature control method includes the steps of: circulating the refrigerant separated from the oil back to the heat exchanger; and adjusting at least one of a rotation speed of a rotor of the rotary pump, a position of a valve arranged at a connecting portion of the rotary pump and the heat exchanger, and a position of an airflow adjustment valve arranged at a connecting portion of the oil refrigerant separator and the heat exchanger.Type: GrantFiled: September 12, 2017Date of Patent: March 17, 2020Assignee: Tokyo Electron LimitedInventors: Yasuharu Sasaki, Kazuyoshi Matsuzaki
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Patent number: 10585358Abstract: A process for manufacturing a flat, polymer-coated electrostatic chuck platen involves imposing forces on the chuck to compensate for platen warpage induced during shrinkage of the polymer coating as it is cured.Type: GrantFiled: September 14, 2018Date of Patent: March 10, 2020Assignee: Corning IncorpotatedInventors: Mark Francis Krol, John Stephen Peanasky
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Patent number: 10571069Abstract: Embodiments of the present disclosure are directed to a gimbal assembly, that includes a gimbal plate having a central opening, a pivot screw disposed within a pivot mount formed in the gimbal plate, wherein the pivot screw includes a spherical pivot head about which the gimbal plate pivots, one or more motors coupled to the gimbal plate configured to provide in-situ gimbal plate motion about the spherical pivot head, and a plurality of leveling indicators configured that determine deflection of gimbal plate.Type: GrantFiled: September 29, 2017Date of Patent: February 25, 2020Assignee: Applied Materials, Inc.Inventors: Muhannad Mustafa, Muhammad M. Rasheed
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Patent number: 10557190Abstract: A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.Type: GrantFiled: January 24, 2014Date of Patent: February 11, 2020Assignee: Tokyo Electron LimitedInventors: Satoshi Taga, Yoshiyuki Kobayashi
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Patent number: 10550470Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.Type: GrantFiled: October 26, 2018Date of Patent: February 4, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Hideomi Hane, Kentaro Oshimo, Shimon Otsuki, Takeshi Oyama, Hiroaki Ikegawa, Jun Ogawa
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Patent number: 10529611Abstract: Provided is a barrier seal for an electrostatic chuck in the plasma etching process. The barrier seal comprises multiple sealing portions to block the connecting layer of the electrostatic chuck and the plasma gas. The groove of the electrostatic chuck may be completely filled by the barrier seal. Even one of the multiple sealing portions is destroyed in the plasma etching process by the plasma gas, the barrier seal still prevents leaking of the electrostatic chuck effectively. The barrier seal provides a buffer period for engineers to replace the damaged barrier seal before the leaking occurs. Danger of leaking caused by abrupt breaking of the barrier seal is reduced. Furthermore, the barrier seal facilitates stability and safety of the plasma etching process. The yield of products manufactured by the electrostatic chuck may be improved.Type: GrantFiled: January 20, 2016Date of Patent: January 7, 2020Assignee: MFC Sealing Technology Co., Ltd.Inventors: Yo-Yu Chang, Chun-Yao Huang
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Patent number: 10497599Abstract: Provided are a corrosion-resistant member; a member for an electrostatic chuck; and a process for producing the corrosion-resistant member. The corrosion-resistant member includes an oxide which includes samarium and aluminum and has a perovskite type structure. The member for an electrostatic chuck includes the corrosion-resistant member. The process for producing a corrosion-resistant member includes: mixing aluminum oxide powder and samarium oxide powder with a solvent to prepare a slurry including the aluminum oxide powder and the samarium oxide powder; drying the slurry to prepare a mixed powder including the aluminum powder and the samarium oxide powder, and molding the mixed powder to prepare a green body; and calcinating the green body to prepare a sintered body.Type: GrantFiled: August 25, 2015Date of Patent: December 3, 2019Assignee: SUMITOMO OSAKA CEMENT CO., LTDInventors: Megumi Ootomo, Kentaro Takahashi, Nobuhiro Hidaka, Hironori Kugimoto
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Patent number: 10490450Abstract: An electrostatic chuck table for holding a workpiece includes: a plate-shaped base transmittable with respect to a laser beam having a predetermined wavelength allowing the laser beam to be transmitted through the workpiece, the plate-shaped base having a first surface and a second surface opposite the first surface; an electrostatic attraction electrode assembly transmittable with respect to the laser beam having the predetermined wavelength, the electrostatic attraction electrode assembly being formed on the first surface of the base; and a resin layer transmittable with respect to the laser beam having the predetermined wavelength, the resin layer covering the electrode assembly and providing a holding surface for holding the workpiece thereon. The electrostatic chuck table is used in forming a modified layer within the workpiece held on the holding surface with the laser beam that is applied to the workpiece from the side of the second surface of the base.Type: GrantFiled: July 10, 2017Date of Patent: November 26, 2019Assignee: Disco CorporationInventors: Sakae Matsuzaki, Noriko Ito, Ken Togashi, Kenji Furuta
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Patent number: 10483878Abstract: Electro-adhesion grippers for holding workpieces, are disclosed as including a first electrode and a second electrode that mutually engage, in a plan view of the electrodes, wherein, at least in a sub-region, the first electrode and the second electrode correspond to the border lines of a two-dimensional fractal space-filling curve of a second or higher order, and wherein the border lines result from enclosing a shape of the space-filling curve on both sides on an auxiliary grid that is offset with respect to a grid of the space-filling curve by half a grid spacing in each grid direction.Type: GrantFiled: September 13, 2018Date of Patent: November 19, 2019Assignee: TRUMPF GmbH + Co. KGInventor: Alexander Heinz
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Patent number: 10475687Abstract: An aspect of the present invention has an object to provide an electrostatic chuck device which is provided with a plurality of divided heaters and in which uniform temperature control of a zone which is heated by each heater can be performed with a simple configuration.Type: GrantFiled: November 19, 2015Date of Patent: November 12, 2019Assignee: SUMITOMO OSAKA CEMENT CO., LTD.Inventors: Mamoru Kosakai, Yukio Miura
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Patent number: 10468285Abstract: A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.Type: GrantFiled: July 6, 2017Date of Patent: November 5, 2019Assignee: Applied Materials, Inc.Inventors: Toan Q. Tran, Sultan Malik, Dmitry Lubomirsky, Shambhu N. Roy, Satoru Kobayashi, Tae Seung Cho, Soonam Park, Shankar Venkataraman
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Patent number: 10460969Abstract: Described herein are an electrostatic chuck and method for using the same. In one example, an electrostatic chuck is provided that includes a plurality of independently replaceable electrostatic chuck assemblies mounted in an array across a chuck body. The electrostatic chuck assemblies define a substrate support surface suitable for supporting a large area substrate. At least a first electrostatic chuck assembly of the plurality of electrostatic chuck assemblies is operable independent of an operation of a second electrostatic chuck assembly of the plurality of electrostatic chuck assemblies. In yet another example, a method for chucking a substrate is provided.Type: GrantFiled: March 17, 2017Date of Patent: October 29, 2019Assignee: Applied Materials, Inc.Inventors: John M. White, Shreesha Y. Rao
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Patent number: 10453734Abstract: A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder including: a main body having a main body surface; and a plurality of burls projecting from the main body surface; wherein each burl has a distal end configured to engage with the substrate; the distal ends of the burls substantially conform to a support plane whereby a substrate can be supported in a substantially flat state on the burls; a frictional force between the distal end of each burl and a substrate engaged therewith arises in a direction parallel to the support plane in the event of a relative movement of the substrate and substrate holder in the direction; and distal end surfaces of the burls are provided with a release structure configured so that the frictional force is less than would arise in the absence of the release structure.Type: GrantFiled: June 1, 2016Date of Patent: October 22, 2019Assignee: ASML Netherlands B.V.Inventors: Thomas Poiesz, Martijn Houben, Abraham Alexander Soethoudt
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Patent number: 10410899Abstract: Described herein are an electrostatic chuck and method for using the same. In one example, an electrostatic chuck is provided that includes a plurality of independently replaceable electrostatic chuck assemblies mounted in an array across a chuck body. The electrostatic chuck assemblies define a substrate support surface suitable for supporting a large area substrate. At least a first electrostatic chuck assembly of the plurality of electrostatic chuck assemblies is operable independent of an operation of a second electrostatic chuck assembly of the plurality of electrostatic chuck assemblies. In yet another example, a method for chucking a substrate is provided.Type: GrantFiled: March 31, 2017Date of Patent: September 10, 2019Assignee: APPLIED MATERIALS, INC.Inventors: John M. White, Shreesha Y. Rao
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Patent number: 10410897Abstract: An electrostatic chuck includes an anisotropic heat conductor which is disposed between an attraction substrate and a first heater member, and has an upper surface and a lower surface, and a coefficient of thermal conductivity which varies depending on directions. The anisotropic heat conductor is disposed so that the coefficient of thermal conductivity in a plane direction is larger than the coefficient of thermal conductivity in a thickness direction. Further, the electrostatic chuck includes metal layers which are joined to the anisotropic heat conductor so as to cover the upper surface and the lower surface of the anisotropic heat conductor, and an adhesive layer which is provided on a surface of each metal layer, and joins the metal layer to the attraction substrate or the heater member. Moreover, at least one of the metal layers is a fused metal layer formed by solidifying a melted metal.Type: GrantFiled: June 17, 2015Date of Patent: September 10, 2019Assignee: NGK SPARK PLUG CO., LTD.Inventors: Kaname Miwa, Shota Saito
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Patent number: 10395963Abstract: In accordance with an embodiment of the invention, there is provided an electrostatic chuck comprising an electrode, and a surface layer activated by a voltage in the electrode to form an electric charge to electrostatically clamp a substrate to the electrostatic chuck. The surface layer includes a plurality of protrusions extending to a height above portions of the surface layer surrounding the protrusions to support the substrate upon the protrusions during electrostatic clamping of the substrate. The protrusions are substantially equally spaced across the surface layer as measured by a center to center distance between pairs of neighboring protrusions.Type: GrantFiled: October 17, 2016Date of Patent: August 27, 2019Assignee: ENTEGRIS, INC.Inventor: Richard A. Cooke
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Patent number: 10391526Abstract: A cleaning fixture assembly for protecting an electrostatic chuck suitable for supporting semiconductor substrates during a cleaning process contains a plate configured to align with and engage a backside of the electrostatic chuck, the plate having an annular seal portion surrounding a pocket. The cleaning fixture assembly also contains a first O-ring engaging the annular seal portion of the plate, a plurality of through-holes in the pocket of the plate, and a plurality of O-rings surrounding the plurality of through-holes in the pocket of the plate. The plurality of through-holes are configured to be aligned with and in fluid communication with lift pin holes and helium holes in the backside of the electrostatic chuck, and the plurality of O-rings are positioned to allow cleaning media to engage the lift pin holes and helium holes in the electrostatic chuck during a cleaning process while sealing the cleaning media from reaching the backside of the electrostatic chuck.Type: GrantFiled: December 12, 2013Date of Patent: August 27, 2019Assignee: Lam Research CorporationInventors: Armen Avoyan, Cliff LaCroix, Hong Shih, Kennet Baylon
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Patent number: 10385454Abstract: In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD).Type: GrantFiled: March 3, 2017Date of Patent: August 20, 2019Assignees: Varian Semiconductor Equipment Associates, Inc., Entegris, Inc.Inventors: Dale K. Stone, Richard Cooke, I-Kuan Lin, Julian G. Blake, Lyudmila Stone
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Patent number: 10374358Abstract: A feeder-cover structure includes a power feeder including a socket and a plug fitted together, a cover structure that covers and seals the power feeder, and a supply mechanism that supplies dry air or an inert gas into the cover structure. A gap is formed between the power feeder and the cover structure such that the dry air or the inert gas is supplied through the gap into the cover structure.Type: GrantFiled: January 15, 2015Date of Patent: August 6, 2019Assignee: Tokyo Electron LimitedInventors: Ryota Sakane, Dai Kitagawa
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Patent number: 10361110Abstract: A substrate holding apparatus includes a baseplate, a heating unit disposed over the baseplate, and an electrostatic chuck disposed on the heating unit, wherein the heating unit includes a heating element having at least one roughened surface and an insulating layer enclosing the heating element, and the insulating layer and the electrostatic chuck are directly bonded to each other.Type: GrantFiled: July 28, 2017Date of Patent: July 23, 2019Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.Inventors: Keiichi Takemoto, Yoichi Harayama, Yoji Asahi, Shuzo Aoki
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Patent number: 10347522Abstract: A method and apparatus for discharging a residual charge from a substrate support. In one example, a substrate support is provided that includes a body, an electrode disposed in the body, a radiation emitter and a diffuser. The body has one or more holes formed in a workpiece support surface, the workpiece support surface configured to accept a substrate thereon. The electrode is configured to electrostatically hold a substrate to the workpiece support surface. The radiation emitter is disposed in a first hole of the one or more holes formed in the workpiece support surface. The radiation emitter is configured to emit electromagnetic energy out of the first hole. The diffuser is disposed in first hole over the radiation emitter.Type: GrantFiled: March 14, 2017Date of Patent: July 9, 2019Assignee: Applied Materials, Inc.Inventors: Wendell Glen Boyd, Jr., Tom K. Cho, Robert T. Hirahara
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Patent number: 10338477Abstract: A lithography apparatus is provided. The lithography apparatus a reticle having a first surface and a second surface facing each other, and a pattern region formed on the first surface, a reticle stage facing the second surface of the reticle, the reticle stage to chuck the reticle, a protection conductor within a chamber housing the reticle and the reticle stage; and a power source to supply a voltage to the protection conductor.Type: GrantFiled: August 10, 2017Date of Patent: July 2, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Do Hyung Kim, Seong Sue Kim
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Patent number: 10332774Abstract: A wafer support structure includes a ceramic tray plate having a plurality of wafer placement portions in which wafers are placed, and arranged on an upper surface of a ceramic base plate. The base plate incorporates a base-side electrode, and the tray plate incorporates a tray-side electrode. In the wafer support structure, voltages applied to the base-side electrode and the tray-side electrode are adjusted in a state where the wafers are placed in the wafer placement portions. As a result, an electrostatic force acting to attract the base plate and the tray plate to each other is generated, and an electrostatic force acting to attract the tray plate and the wafers to each other is generated.Type: GrantFiled: October 27, 2016Date of Patent: June 25, 2019Assignee: NGK Insulators, Ltd.Inventor: Hiroshi Takebayashi
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Patent number: 10304715Abstract: A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. Trenches are formed in the thermally conductive base approximately concentric around a center of the thermally conductive base. The trenches extend from the upper surface towards a lower surface of the thermally conductive base without contacting the lower surface of the thermally conductive base. The thermally conductive base includes thermal zones. The substrate support assembly further includes a thermally insulating material disposed in the trenches. The thermally insulating material in a trench of the trenches provides a degree of thermal isolation between two of the thermal zones separated by the trench at the upper surface of the thermally conductive base.Type: GrantFiled: May 11, 2018Date of Patent: May 28, 2019Assignee: Applied Materials, Inc.Inventors: Vijay D. Parkhe, Konstantin Makhratchev, Jason Della Rosa, Hamid Noorbakhsh, Brad L. Mays, Douglas A. Buchberger, Jr.