Layered Patents (Class 361/313)
  • Patent number: 8199457
    Abstract: The present invention is directed to a microfabricated RF capacitor. The capacitor includes two signal wirebond pads configured for being connected to an electrical current source. The capacitor further includes two backbone structures which are connected to the wirebond pads and receive electrical current from the electrical current source via the wirebond pads, each backbone structure including a first backbone portion and a second backbone portion. The capacitor further includes a plurality of protrusions which are connected to the backbone portions of the backbone structures. The protrusions are spaced apart from each other and parallel to each other. Further, the protrusions are configured for distributing current received by the backbone structures and for promoting structural stability of the capacitor. The capacitor further includes a ground wall structure which may be configured for receiving ground current from a ground current source.
    Type: Grant
    Filed: August 16, 2010
    Date of Patent: June 12, 2012
    Assignee: Rockwell Collins, Inc.
    Inventors: Robert L. Palandech, Nathan P. Lower, Mark M. Mulbrook, Nathaniel P. Wyckoff
  • Patent number: 8199456
    Abstract: A capacitor and a method of manufacturing the capacitor are disclosed. The capacitor may include a board, a polymer layer formed on one side of the board, a circuit pattern selectively formed over the polymer layer, and a titania nanosheet corresponding with the circuit pattern. Embodiments of the invention can provide flatness in the board, and allows the copper of the board to maintain its functionality as an electrode while increasing the adhesion to the titania nanosheet. The titania nanosheet may thus be implemented on a patterned board in a desired shape, number of layers, and thickness.
    Type: Grant
    Filed: April 2, 2008
    Date of Patent: June 12, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sung-Taek Lim, Yul-Kyo Chung, Woon-Chun Kim
  • Patent number: 8194390
    Abstract: A multilayer ceramic capacitor includes a capacitor body in which inner electrodes and dielectric layers are alternately laminated, and a length difference rate (D) of the inner electrodes is 7% or less. The length difference rate (D) is defined by D={L?1}/L×100, where L is a maximum length of the inner electrode, and l is a minimum length of the inner electrode.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: June 5, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Hyo Jung Kim, Dong Ik Chang, Doo Young Kim, Ji Hun Jeong
  • Patent number: 8194392
    Abstract: A ceramic material has a perovskite structure and is represented by formula of (1?x)ABO3-xYZO3. In the formula, “x” is a real number that is greater than 0 and is less than 1 each of “A,” “B,” “Y,” and “Z” is one or more kinds selected from a plurality of metal ions M other than a Pb ion and alkali metal ions, “A” is bivalent, “B” is tetravalent, “Y” is trivalent or combination of trivalent metal ions, and “Z” is bivalent and/or trivalent metal ions, or a bivalent and/or pentavalent metal ions.
    Type: Grant
    Filed: July 6, 2010
    Date of Patent: June 5, 2012
    Assignees: Denso Corporation, The Univeristy of Tokyo
    Inventors: Rajesh Kumar Malhan, Naohiro Sugiyama, Yuji Noguchi, Masaru Miyayama
  • Patent number: 8189320
    Abstract: Disclosed herein is a capacitative element, including: a first electrode formed on a substrate; and a second electrode provided so as to sandwich a dielectric between the first electrode and the second electrode and so as to surround the first electrode on four sides along a surface of the substrate.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: May 29, 2012
    Assignee: Sony Corporation
    Inventors: Ken Kitamura, Motoyasu Yano
  • Publication number: 20120126300
    Abstract: A capacitor includes a first electrode, a first dielectric layer disposed on the first electrode, the first dielectric layer having a tetragonal crystal structure and including a first metal oxide layer doped with a first impurity, a second dielectric layer disposed on the first metal oxide layer, the second dielectric layer having a tetragonal crystal structure and including a second metal oxide layer doped with a second impurity, and a second electrode disposed on the second dielectric layer. The first dielectric layer has a lower crystallization temperature and a substantially higher dielectric constant than the second dielectric layer.
    Type: Application
    Filed: November 7, 2011
    Publication date: May 24, 2012
    Inventors: Kiyeon Park, Insang Jeon, Hanjin Lim, Yeongcheol Lee, Jun-Noh Lee
  • Patent number: 8184425
    Abstract: There is provided a multilayer capacitor including: a capacitor body where a plurality of dielectric layers are laminated, the capacitor body including first and second surfaces opposing each other in a laminated direction, wherein the first surface provides a mounting surface; a plurality of first and second inner electrodes; an inner connecting conductor; and a plurality of first and second outer electrodes formed on an outer surface of the body, wherein a corresponding one of the outer electrodes having identical polarity to the inner connecting conductor includes at least one outer terminal formed on the first surface of the body to connect to the inner connecting conductor, and at least one outer connecting conductor formed on the second surface of the body to connect a corresponding one of the inner electrodes of identical polarity to the inner connecting conductor.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: May 22, 2012
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Byoung Hwa Lee, Sung Kwon Wi, Hae Suk Chung, Dong Seok Park, Sang Soo Park, Min Cheol Park
  • Patent number: 8184426
    Abstract: Provided is a dielectric element comprising a dielectric thin film formed of a layer of perovskite nanosheets. The dielectric element has the advantages of inherent properties and high-level texture and structure controllability of the perovskite nanosheets, therefore realizing both a high dielectric constant and good insulating properties in a nano-region.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: May 22, 2012
    Assignee: National Institute for Materials Science
    Inventors: Minoru Osada, Yasuo Ebina, Takayoshi Sasaki
  • Patent number: 8179662
    Abstract: A monolithic ceramic capacitor includes dielectric ceramic layers having a thickness of less than 1 ?m. When this thickness is t and the crystal grains of a dielectric ceramic of the layers have a mean diameter of r, a mean number N of grain boundaries satisfies 0<N?2 where N=t/r?1. The dielectric ceramic contains, as a main component, a perovskite type compound ABO3 (where A is Ba or Ba and at least one of Ca and Sr, B is Ti or Ti and at least one of Zr and Hf), and further contains Mn and V as auxiliary components. On the basis of 100 molar parts of the main component, the content of Mn is 0.05 to 0.75 molar parts, the content of V is 0.05 to 0.75 molar parts, and the total content of Mn and V is 0.10 to 0.80 molar parts.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: May 15, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Takayuki Yao
  • Patent number: 8174840
    Abstract: A multi-functional composite substrate structure is provided. The first substrate with high dielectric constant and the second substrate with low dielectric constant and low loss tangent are interlaced above the third substrate. One or more permeance blocks may be formed above each substrate, so that one or more inductors may be fabricated thereon. One or more capacitors may be fabricated on the first substrate. Also, one or more signal transmission traces of the system impedance are formed on the second substrate of the outside layer. Therefore, the inductance of the inductor(s) is effectively enhanced. Moreover, the area of built-in components is reduced. Furthermore, it has shorter delay time, smaller dielectric loss, and better return loss for the transmission of high speed and high frequency signal.
    Type: Grant
    Filed: October 29, 2008
    Date of Patent: May 8, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Uei-Ming Jow, Chang-Sheng Chen, Chin-Sun Shyu, Min-Lin Lee, Shinn-Juh Lay, Ying-Jiunn Lai
  • Patent number: 8174815
    Abstract: In a method for manufacturing a monolithic ceramic electronic component, when an inner conductor is formed by printing an electrically conductive paste, a smear may be generated in an opening of the inner conductor at a side of the opening near to a position from which printing is started in a printing direction. The smear may cause an unwanted contact between the inner conductor and a via conductor, which is a conductor extending through the opening and having a potential different from that of the inner conductor, and cause a short-circuit. The inner conductor is printed in such a manner that the center of each of the via conductors is deviated from the center of the opening in the direction in which the electrically conductive paste is printed. With this structure, even if the smear is generated in the opening, the probability that the inner conductor contact the via conductor and cause a short-circuit is minimized.
    Type: Grant
    Filed: July 17, 2009
    Date of Patent: May 8, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Hidetaka Fukudome
  • Patent number: 8169771
    Abstract: The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs.
    Type: Grant
    Filed: October 16, 2007
    Date of Patent: May 1, 2012
    Assignees: Commissariat a l'Energie Atomique, STMicroelectronics (Crolles 2) S.A.S.
    Inventors: Emmanuel Defay, Julie Guillan, Serge Blonkowski
  • Publication number: 20120092807
    Abstract: The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO2 layer, the other layers of the sub-stack being layers of a dielectric material having a composition suitable to form a cubic perovskite phase upon crystallization of said sub-stack of layers. Crystallization is obtained via heat treatment. When used in a metal-insulator-metal capacitor, the stack of layers can provide improved characteristics as a consequence of the TiO2 layer being present in the sub-stack.
    Type: Application
    Filed: September 26, 2011
    Publication date: April 19, 2012
    Applicant: IMEC
    Inventors: Mihaela Ioana Popovici, Johan Swerts, Malgorzata Pawlak, Kazuyuki Tomida, Min-Soo Kim, Jorge Kittl, Sven Van Elshocht
  • Patent number: 8159312
    Abstract: A method and class of circuit configurations for coupling low-frequency signals from one stage of an electronic apparatus to another stage, from the outside world to such a stage, or from such a stage to the outside world, through the use of a plurality of symmetrical double-layer capacitors combined with other electronic components are disclosed. The capacitors are used for signal transmission while blocking direct current, rather than for energy storage. Use of double-layer capacitors in place of more conventional capacitors permits the transmission of a much wider range of signals with far less distortion. The technology is particularly well-adapted to use in medical devices, including bioelectronic stimulators, where redundant devices are required for safety in case of single component failure while unacceptable levels of distortion may occur when conventional components are used.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: April 17, 2012
    Assignee: MedRelief Inc.
    Inventor: James W. Kronberg
  • Patent number: 8159811
    Abstract: A metal capacitor in which an electric conductivity is significantly improved by applying a metal material for an electrolyte and a manufacturing method thereof is provided.
    Type: Grant
    Filed: June 10, 2008
    Date of Patent: April 17, 2012
    Inventor: Young Joo Oh
  • Patent number: 8154850
    Abstract: Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.
    Type: Grant
    Filed: May 8, 2008
    Date of Patent: April 10, 2012
    Assignee: Paratek Microwave, Inc.
    Inventors: Marina Zelner, Mircea Capanu, Susan C. Nagy
  • Patent number: 8149566
    Abstract: A method for manufacturing a laminated electronic component includes the steps of preparing a component main body having a laminated structure, the component main body including a plurality of internal electrodes formed therein, and each of the internal electrodes being partially exposed on an external surface of the component main body, and forming an external terminal electrode on the external surface of the component main body such that the external terminal electrode is electrically connected to the internal electrodes. The step of forming the external terminal electrode includes the steps of forming a first plating layer on exposed surfaces of the internal electrodes of the component main body, applying a water repellant at least on a surface of the first plating layer and on a section in the external surface of the component main body at which an end edge of the first plating layer is located, and then forming a second plating layer on the first plating layer having the water repellant applied thereon.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: April 3, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Akihiro Motoki, Makoto Ogawa, Kenichi Kawasaki, Shunsuke Takeuchi
  • Patent number: 8145362
    Abstract: As system is disclosed for providing power averaging for the utility grids and more specifically to utilizing a unique EESU unit with the capability to store electrical energy over 24 hour periods each day and provide power averaging to homes, commercial, and industrial sites to reduce the peak power requirements. Charging such power averaging units during the non-peak times and delivering the energy during the peak-demands times provides for more efficient utilization of utility-grid power-generating plants and the already existing power transmission lines. Such a unit may also have the capability of isolating the users from utility-grid power failures, transients, and AC noise.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: March 27, 2012
    Assignee: EEStor, Inc.
    Inventors: Richard D. Weir, Carl W. Nelson
  • Patent number: 8125765
    Abstract: In a laminated ceramic electronic component including a ceramic element body including a plurality of effective sections, each of which constitutes a circuit element such as a laminated capacitor unit, bumps generated between the effective portions and a gap interposed between the effective portions can be made minimized. Specifically, the ceramic element body includes a first effective section including a first circuit element and a second effective section including a second circuit element. A gap is provided between the first and second effective section. Floating internal conductors are arranged in the gap at least in one of first and second external layer sections, the first external section being interposed between a first main surface and the first and second effective sections, and the second external layer section being interposed between a second main surface and the first and second effective sections.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: February 28, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Atsushi Ishida, Takumi Taniguchi, Masaki Tani
  • Patent number: 8125764
    Abstract: An electronic component includes a substantially rectangular parallelepiped electronic component body and first to fourth external electrodes. The first to fourth external electrodes are arranged such that a shaped defined by joining the centers of portions of the first to fourth external electrodes on a first main surface with a substantially straight line is substantially square. The first main surface is provided with a substantially linear orientation identifying mark disposed thereon. The orientation identifying mark passes through an intersection of two diagonals of the substantially square shape and extends along the longitudinal direction or the width direction.
    Type: Grant
    Filed: April 16, 2010
    Date of Patent: February 28, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Atsushi Ishida, Takumi Taniguchi, Masaki Tani
  • Patent number: 8120890
    Abstract: A capacitor comprises a substrate layer, a first electrode layer disposed on the substrate layer, and a first dielectric layer disposed on the electrode layer. The dielectric layer comprises a polymeric material having an elongation less than or equal to about 5 percent.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: February 21, 2012
    Assignee: General Electric Company
    Inventors: Daniel Qi Tan, Patricia Chapman Irwin, Yang Cao
  • Publication number: 20120039017
    Abstract: A structural capacitor includes a first carbon fiber material layer, a second carbon fiber material layer, and an interlayer dielectric including a diamond-like-carbon material layer.
    Type: Application
    Filed: August 10, 2011
    Publication date: February 16, 2012
    Inventors: William G. Baron, Jeffrey A. Brogan, Sandra Fries-Carr, Richard J. Gambino, Christopher Gouldstone, Brian Keyes, Sanjay Sampath, Huey-Daw Wu, Richard L.C. Wu
  • Patent number: 8107218
    Abstract: Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: January 31, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Vassil Antonov, Vishwanath Bhat, Chris Carlson
  • Patent number: 8107220
    Abstract: A laminated ceramic capacitor capable of achieving both a high dielectric constant and high electrical insulation property even when the thickness of the dielectric ceramic layer is less than 1 ?m, contains a plurality of laminated dielectric ceramic layers and a plurality of internal electrodes at interfaces between the dielectric ceramic layers, where dielectric ceramic layers are made of dielectric ceramic containing a perovskite-type compound represented by ABO3 as a main ingredient, and R (R is La or the like), M (M is Mn or the like) and Si as accessory ingredients.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: January 31, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Tomoyuki Nakamura, Makoto Matsuda
  • Patent number: 8107221
    Abstract: A dielectric ceramic includes crystal grains containing barium titanate as a main component, magnesium, a rare-earth element, and manganese, wherein the crystal grains have a cubic crystal structure; and the dielectric ceramic contains, per mole of barium, 0.033 to 0.085 mol of magnesium in terms of MgO, 0.1 to 0.2 mol of the rare-earth element (RE) in terms of RE2O3, and 0.006 to 0.018 mol of manganese in terms of MnO. Such a dielectric ceramic has a high relative dielectric constant, stable temperature characteristic of the relative dielectric constant, and no spontaneous polarization.
    Type: Grant
    Filed: October 26, 2007
    Date of Patent: January 31, 2012
    Assignee: Kyocera Corporation
    Inventors: Yusuke Azuma, Daisuke Fukuda
  • Patent number: 8107216
    Abstract: A multilayer capacitor comprises a capacitor element body constituted by a plurality of laminated dielectric layers; first and second signal terminal electrodes and a ground terminal electrode which are arranged on an outer surface of the capacitor element body; and a ground electrode, first and second signal electrodes, and an intermediate internal electrode which are arranged within the capacitor element body. The first signal electrode is connected to the first signal terminal electrode, while the second signal electrode is connected to the second signal terminal electrode. The ground electrode is connected to the ground terminal electrode and has a first region overlapping the first signal electrode in a first direction in which the plurality of dielectric layers are laminated and a second region overlapping the second signal electrode in the first direction.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: January 31, 2012
    Assignee: TDK Corporation
    Inventors: Masaaki Togashi, Takeru Yoshida
  • Patent number: 8094431
    Abstract: In one aspect of the present invention, a method for increasing the dielectric breakdown strength of a polymer is described. The method comprises providing the polymer and contacting a surface of the polymer in a reaction chamber with a gas plasma, under specified plasma conditions. The polymer is selected from the group consisting of a polymer having a glass transition temperature of at least about 150° C., and a polymer composite comprising at least one inorganic constituent. The contact with the gas plasma is carried out for a period of time sufficient to incorporate additional chemical functionality into a surface region of the polymer film, to provide a treated polymer. Also provided are an article and method of manufacture.
    Type: Grant
    Filed: March 31, 2009
    Date of Patent: January 10, 2012
    Assignee: General Electric Company
    Inventors: Daniel Qi Tan, Patricia Chapman Irwin, George Theodore Dalakos, Yang Cao
  • Patent number: 8093682
    Abstract: A resistance memory element is provided which has a relatively high switching voltage and whose resistance can be changed at a relatively high rate. The resistance memory element includes an elementary body and a pair of electrodes opposing each other with at least part of the elementary body therebetween. The elementary body is made of a semiconductor ceramic expressed by a formula: {(Sr1-xMx)1-yAy}(Ti1-zBz)O3 (wherein M represents at least one of Ba and Ca, A represents at least one element selected from the group consisting of Y and rare earth elements, and B represents at least one of Nb and Ta), and satisfies 0<x?0.5 and 0.001?y+z?0.02 (where 0?y?0.02 and 0?z?0.02); 0.5<x?0.8 and 0.003?y+z?0.02 (where 0?y?0.02 and 0?z?0.02); or 0.8<x?1.0 and 0.005?y+z?0.01 (where 0?y?0.02 and 0?z?0.02).
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: January 10, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Sakyo Hirose
  • Patent number: 8094429
    Abstract: A capacitor device may include a first electrode, a second electrode, a third electrode, a first dielectric layer, and a second dielectric layer. The first electrode may be coupled with a first terminal of the capacitor device. The second electrode is under the first electrode and may be coupled with a second terminal of the capacitor device. The second electrode may be electrically isolated from the first electrode. The third electrode is under the first electrode and the second electrode and may be electrically isolated from the second electrode and electrically coupled with the first electrode. The first dielectric layer has a first dielectric constant and may be sandwiched between the first electrode and the second electrode. The second dielectric layer may have a second dielectric constant and may be sandwiched between the second electrode and the third electrode. In one embodiment, the second dielectric constant is at least five times larger than the first dielectric constant.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: January 10, 2012
    Assignee: Industrial Technology Research Institute
    Inventors: Chien-Min Hsu, Min-Lin Lee, Shinn-Juh Lai
  • Patent number: 8094432
    Abstract: A method for manufacturing a multilayer ceramic electronic component includes a first substep of depositing precipitates primarily made of a specific metal on an end of each of internal electrodes exposed at a predetermined surface of a laminate and growing the precipitates to coalesce into a continuous plated sublayer, and a second substep of heat-treating the laminate including the plated sublayer at a temperature of at least about 800° C., wherein a plated layer including a plurality of plated sublayers is formed by continuously performing at least two cycles of the first substep and the second substep.
    Type: Grant
    Filed: January 21, 2009
    Date of Patent: January 10, 2012
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Akihiro Motoki, Makoto Ogawa, Shunsuke Takeuchi, Kenichi Kawasaki
  • Patent number: 8094430
    Abstract: Capacitors are provided comprising a first plate, a second plate spaced from the first plate and a dielectric between the first and second plates. In certain embodiments the plates are arranged generally opposite each other and each is shaped in a periodically repeating pattern that is spatially out of phase with the other so that misregistration of the plates is compensated. In certain embodiments, a floating equipotential conductor is positioned between the plates and has a larger dimension than a corresponding dimension of the plates so that misregistration of the plates is compensated. Methods of manufacturing the capacitors are also provided.
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: January 10, 2012
    Inventors: Harvey J. Horowitz, Bernard Horowitz
  • Patent number: 8068329
    Abstract: A multilayer electronic component includes a ceramic body including ceramic layers that are laminated to one another and internal conductors having exposed portions at side surfaces of the ceramic body. Substantially linear connection portions extend in the lamination direction of the ceramic layers so as to connect the exposed portions to one another. External terminal electrodes cover the exposed portions of the internal conductors and the connection portions and include base plating films directly disposed on the side surfaces by plating. The connection portions are formed by polishing the side surfaces in which the internal conductors are exposed using, for example, a brush so as to elongate the exposed portions of the internal conductors.
    Type: Grant
    Filed: June 10, 2009
    Date of Patent: November 29, 2011
    Assignee: Murata Manufacturing Co. Ltd.
    Inventor: Masaki Tani
  • Patent number: 8068330
    Abstract: A multilayer capacitor comprises a capacitor element body; a first signal terminal electrode, a second signal terminal electrode, and a ground terminal electrode which are arranged on an outer surface of the capacitor element body; and a ground internal electrode and first to third signal internal electrodes which are arranged within the capacitor element body. The ground internal electrode is connected to the ground terminal electrode. The first signal internal electrode is connected to the first signal terminal electrode and opposes the ground internal electrode so as to construct a first capacitor. The second signal internal electrode is connected to the first signal terminal electrode and opposes the ground internal electrode so as to construct a second capacitor. The third signal internal electrode is connected to the second signal terminal electrode and opposes the ground internal electrode so as to construct a third capacitor.
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: November 29, 2011
    Assignee: TDK Corporation
    Inventor: Masaaki Togashi
  • Patent number: 8068328
    Abstract: A method of manufacturing an embedded passive device for a microelectronic application comprises steps of providing a substrate (110, 210, 310), nanolithographically forming a first section (121, 221, 321) of the embedded passive device over the substrate, and nanolithographically forming subsequent sections (122, 222, 322) the embedded passive device adjacent to the first section. The resulting embedded passive device may contain features less than approximately 100 nm in size.
    Type: Grant
    Filed: March 12, 2008
    Date of Patent: November 29, 2011
    Assignee: Intel Corporation
    Inventors: Nachiket R. Raravikar, Rahul Panat
  • Patent number: 8064192
    Abstract: A capacitor element includes a positive electrode body made of valve metal, a dielectric oxide layer on the positive electrode body, a solid electrolytic layer made of conductive polymer on the dielectric oxide layer, and a negative electrode layer on the solid electrolytic layer. A solid electrolytic capacitor includes the capacitor element, a package made of insulating resin covering the capacitor element, a base electrode provided at an edge surface of the package and made of non-valve metal coupled with the positive electrode body, a diffusion layer for connecting the positive electrode body to the base electrode, an external electrode on the base electrode, and an external electrode connected to the negative electrode layer. The solid electrolytic capacitor reduces the number of components and processes to reduce its cost and to have a small size, and has a small equivalent series resistance and a small equivalent series inductance.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: November 22, 2011
    Assignee: Panasonic Corporation
    Inventors: Kenji Kuranuki, Katsuyuki Nakamura, Mikio Kobashi
  • Patent number: 8064187
    Abstract: A monolithic ceramic electronic component includes a dummy electrode having a dummy body portion and an internal electrode having an extended portion, in which the conductor density of the dummy body portion is less than the conductor density of the extended portion of an internal electrode. With this configuration, the fixing strength of an external terminal electrode to a ceramic element assembly is improved, and undesirable deformation caused by a dummy conductor provided in a monolithic ceramic electronic component is prevented.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: November 22, 2011
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Akihiro Yoshida, Hiroyuki Matsumoto
  • Publication number: 20110279946
    Abstract: A connector assembly utilizes improved capacitive coupling for connecting together electrical circuits on two substrates (7, 8). The connector assembly includes first (2) and second (3) connectors respectively attached to first and second circuit substrates. The first connector includes a plurality of first conductors (25) connected to circuits (75) on the first circuit substrate and these conductors have exposed contact surfaces with a dielectric material (4) disposed thereon. The first conductors and associated dielectric material confront second, opposing conductors (35) supported by the second connector frame when the connector frames are engaged together. A liquid dielectric material (45) is interposed between the terminals and the dielectric portions that fills minute gaps which may occur in the dielectric portions to improve the capacitive coupling ability of the connector assembly.
    Type: Application
    Filed: February 1, 2010
    Publication date: November 17, 2011
    Applicant: Molex Incorporated
    Inventors: Toshihiro Niitsu, Masako Nishikawa
  • Patent number: 8059388
    Abstract: The invention relates to a multilayer ceramic capacitor having dielectric layers and internal electrode layers disposed alternately. The dielectric layers include a dielectric ceramic containing barium titanate as a main component, and also calcium, magnesium, vanadium, manganese, and a rare-earth element. Crystals constituting the dielectric ceramic are constituted by grains containing barium titanate as their main component and containing calcium in a concentration of 0.2 atomic % or less or containing the calcium in a concentration of 0.4 atomic % or more. The crystals grains are also distinct in their relative distributions of magnesium and rare-earth elements between the center of the grain and the surface of the grain. Finally, the relative areas of the two kinds of crystals observed in the plane of a polished surface of the dielectric ceramic are described by a ratio b/(a+b), which is 0.5 to 0.8.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: November 15, 2011
    Assignee: Kyocera Corporation
    Inventors: Youichi Yamazaki, Hideyuki Osuzu, Yoshihiro Fujioka, Daisuke Fukuda
  • Patent number: 8059423
    Abstract: A multi-layered circuit board is provided having a buried capacitive layer and a device-specific embedded, localized, non-discrete, and distributive capacitive element. A printed circuit board is provided including (1) a first dielectric layer, (2) a first conductive layer coupled to a first surface of the first dielectric layer, (3) a second conductive layer coupled to a second surface of the first dielectric layer, and (4) a localized distributive non-discrete capacitive element adjacent the first conductive layer, wherein the capacitive element occupies a region that approximately coincides with a location over which a device to be coupled to the capacitive element is to be mounted. The embedded, localized, non-discrete, and distributive capacitive element may provide device-specific capacitance to suppress voltage/current noise for a particular device.
    Type: Grant
    Filed: February 6, 2007
    Date of Patent: November 15, 2011
    Assignee: Sanmina-Sci Corporation
    Inventor: Nicholas Biunno
  • Patent number: 8059387
    Abstract: Provided are a high voltage multi-layer ceramic capacitor (MLCC) that may enable a surface mounting, and may form a guide electrode between inner electrodes or between sealing electrodes to thereby prevent a decrease in an inner voltage, caused by a parasitic capacitance, and a director current (DC)-link capacitor module using the MLCC.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: November 15, 2011
    Assignee: Samhwa Capacitor Co., Ltd.
    Inventors: Jung Rag Yoon, Bong Wha Moon, Tae Serk Chung, Kyung Min Lee, Sang Won Lee
  • Patent number: 8054608
    Abstract: Provided is a MLCC module used as a direct current (DC) link capacitor that is included in an inverter of a hybrid vehicle.
    Type: Grant
    Filed: August 26, 2008
    Date of Patent: November 8, 2011
    Assignee: Samhwa Capacitor Co., Ltd.
    Inventors: Jung Rag Yoon, Kyung Min Lee, Bong Wha Moon, Sang Won Lee, Min Kee Kim
  • Patent number: 8040658
    Abstract: A SrTiO3-based grain boundary insulation type semiconductor ceramic contains a donor element in solid solution in crystal grains, an acceptor element at least in crystal grain boundaries, an integral width of (222) face of the crystal face of 0.500° or less, and an average powder grain size of crystal grains of 1.0 ?m or less. A semiconductor ceramic is obtained by firing this ceramic, and a monolithic semiconductor ceramic capacitor is obtained by using the semiconductor ceramic. The SrTiO3-based grain boundary insulation type semiconductor ceramic powder has a large apparent relative dielectric constant ?rAPP of 5,000 or more even when the average ceramic grain size of crystal grains is 1.0 ?m or less and which has an excellent insulating property. The monolithic semiconductor ceramic capacitor is capable of having a large capacity through reduction in thickness and multilayering.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: October 18, 2011
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Mitsutoshi Kawamoto
  • Patent number: 8035951
    Abstract: A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.
    Type: Grant
    Filed: August 23, 2010
    Date of Patent: October 11, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Shih-Hsien Wu, Shinn-Juh Lai, Min-Lin Lee, Shur-Fen Liu
  • Patent number: 8027144
    Abstract: A capacitor structure is provided. The capacitor structure comprises a plurality of parallel conductive line levels and a plurality of vias. Each conductive line level comprises first conductive lines parallel to each other and second conductive lines parallel to each other. Also, the first conductive lines on different conductive line levels are aligned to each other and the second conductive lines on different conductive line levels are aligned to each other so as to form first conductive line co-planes and second conductive line co-planes. The vias are located on the conductive line co-planes and between the conductive line levels for connecting the conductive lines on the neighboring conductive line levels. The vias, on a height level of each of the conductive line co-planes, are arranged only on one of the neighboring conductive line co-planes.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: September 27, 2011
    Assignee: United Microelectronics Corp.
    Inventors: Kai-Ling Chiu, Victor Chiang Liang, Chih-Yu Tseng, Hui-Sheng Chang, Chia-Te Chien, You-Ren Liu
  • Patent number: 8014124
    Abstract: An MOM capacitor includes a first metal plate; a second metal plate in close proximity to the first metal plate; a third metal plate in close proximity to the first metal plate, and at least one oxide layer interposed between the first, second and three vertical metal plates. The first, second and third metal plate are connected to three different terminals of an integrated circuit.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: September 6, 2011
    Assignee: Mediatek Inc.
    Inventor: Tser-Yu Lin
  • Patent number: 8014125
    Abstract: Various capacitors for use with integrated circuits and other devices and fabrication methods are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first capacitor plate that has at least two non-linear strips and forming a second capacitor plate that has a non-linear strip positioned between the at least two non-linear strips of the first capacitor plate. A dielectric is provided between the non-linear strip of the second capacitor plate and the at least two non-linear strips of the first capacitor plate.
    Type: Grant
    Filed: November 26, 2007
    Date of Patent: September 6, 2011
    Assignee: ATI Technologies ULC
    Inventors: Oleg Drapkin, Grigori Temkine, Kristina Au
  • Patent number: 8014123
    Abstract: A multilayer ceramic electronic component includes a ceramic body including a plurality of ceramic layers, the ceramic body having a first main surface and a second main surface and a plurality of side surfaces that connect the first main surface to the second main surface, an internal conductor including nickel, the internal conductor being disposed in the ceramic body and having an exposed portion exposed at least one of the side surfaces, and an external terminal electrode disposed on at least one of the side surfaces of the ceramic body, the external terminal electrode being electrically connected to the internal conductor. The external terminal electrode includes a first conductive layer including a Sn—Cu—Ni intermetallic compound, the first conductive layer covering the exposed portion of the internal conductor at least one of the side surfaces of the ceramic body.
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: September 6, 2011
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takayuki Kayatani, Akihiro Motoki
  • Patent number: 8014126
    Abstract: Electronic device 1 comprises an element body 10, comprising a dielectric layer 2 constituted by a dielectric ceramic composition, and a terminal electrode 4, formed outside of the element body 10. The dielectric ceramic composition comprised a main component including barium titanate; a first subcomponent including at least one oxide of Mg and Ca; a second subcomponent including SiO2; a third subcomponent including at least one oxide of Mn and Cr; and a fourth subcomponent including an oxide of rare earth elements, wherein the net valence of Mn and/or Cr in the third subcomponent is 2.2 to 2.4. According to the electronic device 1, both high temperature accelerated lifetime characteristics and capacity stress aging characteristics can be improved in a balanced manner.
    Type: Grant
    Filed: June 23, 2006
    Date of Patent: September 6, 2011
    Assignee: TDK Corporation
    Inventors: Shigeki Sato, Keiichi Fukuda
  • Patent number: 8009408
    Abstract: Better high-temperature load characteristics are obtained in a laminated ceramic capacitor including a dielectric ceramic layer with a thickness of 1 ?m or less. The laminated ceramic capacitor includes a plurality of stacked dielectric ceramic layers, a plurality of internal electrode layers, each disposed between dielectric ceramic layers, and external electrodes that are electrically connected to internal electrode layers. In this laminated ceramic capacitor, when the thickness of each dielectric ceramic layer is denoted by tc and the thickness of each internal electrode layer is denoted by te, tc is 1 ?m or less, and tc/te is equal to or less than 1.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: August 30, 2011
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Makoto Matsuda, Tomoyuki Nakamura
  • Patent number: 8009407
    Abstract: A capacitor includes a multi layer structure on a ceramic or crystalline substrate. The multilayer structure includes a lower electrode, an upper electrode, and a dielectric that is tunable by a voltage applied to the electrodes. The multilayer structure is configured such that resonant oscillation modes of bulk acoustic waves can be propagated in the multilayer structure and such that the resonant frequencies of the oscillation modes are outside a first band range of between 810 and 1000 MHz, second band range of between 1700 and 2205 MHz and third band range of between 2400 and 2483.5 MHz.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: August 30, 2011
    Assignee: Epcos AG
    Inventors: Anton Leidl, Wolfgang Sauer, Stefan Seitz