Abstract: Disclosed is a monolithic ceramic capacitor comprising dielectric ceramic layers made from a ceramic composition, which comprises an essential component of (1-.alpha.-.beta.){BaO}.sub.m.TiO.sub.2 +.alpha.{(1-x)M.sub.2 O.sub.3 +xRe.sub.2 O.sub.3 }+.beta.(Mn.sub.1-y-z Ni.sub.y Co.sub.z)O (0.0025.ltoreq..alpha..ltoreq.0.025; 0.0025.ltoreq..beta..ltoreq.0.05; .beta./.alpha..ltoreq.4; 0<x.ltoreq.0.50; 0.ltoreq.y<1.0; 0.ltoreq.z<1.0; 0.ltoreq.y+z<1.0; 1.000<m.ltoreq.1.035) and from 0.5 to mols, relative to 100 mols of the essential component, of a side component MgO, and contains from 0.2 to 3.0 parts by weight, relative to 100 parts by weight of said components, of an oxide of the type of Li.sub.2 O--(Si,Ti)O.sub.2 --Al.sub.2 O.sub.3 --ZrO.sub.2. The capacitor can be small-sized while having large capacity. It can be produced even through baking in atmospheres having a low oxygen partial pressure without producing semiconductors.

Abstract: The invention is directed to a capacitor dielectric thick film composition comprising, by weight %: (1) 32-98% BaTiO.sub.3, (2) 2-60% zinc barium borate and (3) 0-8% Bi.sub.2 O.sub.3.

Abstract: A multiple position or continuously variable capacitive switch which operates by producing a series of discernable changes in the capacitance between a pair of conductors (14,16) disposed in a spaced coplanar relationship on a surface of a non-conductive substrate (12). A dielectric layer (18) is applied over the conductors (14,16) and exposed areas of the substrate (12) surface. A resilient conductive pad (20) is positioned atop the dielectric layer (18) and a user movable actuator (28) is moved to controllably increase the capacitance between the conductors (14,16) by creating progressively greater areas of compression between conductive pad (20) and dielectric layer (18).

Abstract: A ferroelectric capacitor structure variously having ceramic lower and upper electrodes, lower and upper insert layers, metal lower and upper electrodes, and a ferroelectric. The ceramic electrode(s) are variously connected with a writing terminal, and the metal electrodes are variously connected with a reading terminal. The use of a combination of metal and ceramic electrodes avoids both fatigue and leakage current.

Abstract: Disclosed is a monolithic ceramic capacitor comprising dielectric ceramic layers made from a material which comprises an essential component of (1-.alpha.-.beta.){BaO}.sub.m .cndot.TiO.sub.2 +.alpha.Re.sub.2 O.sub.3 30 .beta.(Mn.sub.1-x-y Ni.sub.x Co.sub.y)O (0.0025.ltoreq..alpha..ltoreq.0.025; 0.0025.ltoreq..beta..ltoreq.0.05; .beta./.alpha..ltoreq.4; 0.ltoreq.x<1.0; 0.ltoreq.y<1.0; 0.ltoreq.x+y<1.0; 1.000<m.ltoreq.1.035) and from about 0.1 to 3.0 mols, relative to 100 mols of the essential component, of a side component MgO, and contains from about 0.2 to 3.0 parts by weight, relative to 100 parts by weight of said components, of an oxide of the type of Li.sub.2 O-B.sub.2 O.sub.3 -(Si,Ti)O.sub.2. The capacitor is low-priced and can be small-sized, while having large-capacity. It has a dielectric constant of 3000 or more, and has a high insulating resistance of 6000 M.OMEGA..cndot..mu.F or more and 2000 M.OMEGA..cndot..mu.F or more at 2 KV/mm and at room temperature and 125.degree. C.

Abstract: A glass-ceramic substrate for encapsulating an electronic component, with at least two shrinkage control layers restricting shrinkage of the substrate during a co-firing process. The shrinkage control layers are chosen so that they have substantially the same shrinkage characteristics, during co-firing, as the buried electronic component. This results in substantially no differential shrinkage between the electronic component and the substrate, along predetermined directions, during co-firing. In addition, the thermal expansion coefficients of the substrate, shrinkage control layers and electronic component are chosen so that they substantially match, such that their thermal-induced contraction during the cooling phase of the co-firing process substantially match. In the preferred embodiment, the electronic component is buried within the layers of an LTCC structure. The shrinkage control layers are preferably implemented as Al.sub.2 O.sub.3 or TiO.sub.

Abstract: A conductive paste which can control formation of a reaction layer and allow large flexibility measurements, and external electrodes for an electronic product formed using this conductive paste are provided. The conductive paste is prepared by dispersing a metal powder and glass frit in an organic vehicle, and the glass frit is a mixture of a zinc group frit and a lead group frit, the percentage of zinc group frit being within a range of from about 20 to 80 wt %, while the lead group frit is the remainder.

Abstract: Disclosed is a monolithic ceramic capacitor comprising dielectric ceramic layers and inner electrodes wherein each dielectric ceramic layer comprises an essential component having a compositional formula of (1-.alpha.-.beta.)(BaO).sub.m TiO.sub.2 +.alpha.Y.sub.2 O.sub.3 +.beta.(CO.sub.1-x Ni.sub.x)O (where the alkali metal content of BaTiO.sub.3 is not more than 0.03% by weight, 0.0025.ltoreq..alpha..ltoreq.0.03, 0.0025.ltoreq..beta..ltoreq.0.06, 0<.beta./.alpha..ltoreq.6, 0<x.ltoreq.1, 1.000.ltoreq.m.ltoreq.1.035), and a side component consisting of, relative to 100 mols of the essential component, from 0.5 to 3.0 mols of MgO and from 0.05 to 2.0 mols of MnO, and from 0.2 to 3.0 parts by weight 100 parts by weight of the sum of the main component and the side component, of oxide glass of Li.sub.2 O--RO--(Ti,Si)O.sub.2 (where R indicates at least one of Ba, Sr, Ca and Mg). Also disclosed is such a monolithic ceramic capacitor where the Co is replaced by Zn and x is less than 1.

Abstract: This invention is directed to provide a non-reduced dielectric ceramic composition, which comprises a main component comprising BaTiO.sub.3, at least one rare earth metal oxide (Re.sub.2 O.sub.3) selected from the group consisting of Tb.sub.2 O.sub.3, Dy.sub.2 O.sub.3, Ho.sub.2 O.sub.3, and Er.sub.2 O.sub.3, and Co.sub.2 O.sub.3, where such constituents are contained at a predetermined formulation in the main component, an sub-component comprising BaO, MnO, MgO, and at least one compound selected from the group of NiO and Al.sub.2 O.sub.3, and an oxide glass mainly containing Li.sub.2 O--(Si.sub.x Ti.sub.1-x)O.sub.2 --M wherein M represents at least one member selected from the group consisting of Al.sub.2 O.sub.3 and ZrO.sub.2, wherein the main component, the sub-component, and the oxide glass are contained in described amounts. The composition is used as dielectric materials, such as monolithic ceramic capacitors, using base metals such as nickel as an internal electrode material.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. ruthenium dioxide 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.

Abstract: An alumina multilayer wiring substrate having a high capacitance in the substrate on which a VLSI is to be mounted to effectively eliminate electrical noise(s) which may hinder the operation of the VLSI at high speed (frequency). The wiring substrate comprises: (a) a first alumina layer; (b) a first metallized layer on the first alumina layer; (c) a dielectric material layer on the first metallized layer; (d) a cermet layer on the dielectric material layer; (e) a second metallization layer on the cermet layer; (f) a second alumina layer on the second metallization layer; (g) a first conductor electrically connecting to and extending from the second metallized layer through the second alumina layer; and (h) a second conductor electrically extending from the first metallized layer through the cermet layer and dielectric material layer, through but not electrically connecting the first metallized layer, and through the second alumina layer.

Abstract: An isolated sidewall capacitor with dual dielectric, which includes two capacitors. The first capacitor includes a first conductor on top of a substrate, a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein, a non-conductive sidewall spacer formed in the first opening, the non-conductive sidewall spacer having a second opening formed therein, and a second conductor formed in the second opening. The second capacitor includes the second conductor, a first non-conductor disposed over the top portion of the second conductor, a third conductor disposed over the first non-conductor, and the third conductor electrically connected to the first conductor. A second non-conductor isolates the first conductor from the second conductor.

Abstract: A film capacitor element produced from a metallized polyester film is described. In the metallized polyester film, the adhesion between a vapor-deposited metal layer and a polyester substrate is improved by providing a coating layer comprising a specific water soluble or water dispersible resin. The film capacitor produced by the use of the metallized polyester film has good moist heat resistance and long term stability in performance.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g. palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: A ceramic substrate comprises having two or more functional portions separated from each other, by providing a first region comprising a first dielectric porcelain having an insulating layer at the crystal grain boundaries of a semiconductor porcelain containing a semiconductivizing agent and a second region comprising a second dielectric porcelain with different dielectric constant from the first dielectric porcelain through the difference in amount or kind of the semiconductivizing agent from the first region.

Abstract: A capacitor in a semiconductor device and a manufacturing method for the capacitor are provided using a triple film including a Ti layer, a TiN layer, and a Ta layer. The capacitor has a first insulating film formed on the surface of a semiconductor substrate, the first insulating film having a center hole and at least one step between the center hole and the rest of the first insulating film, a spacer formed on the inner wall of the contact hole, a first conductive layer filling the contact hole, a triple film formed on the center of the first insulating film, a second conductive layer formed on the triple film, a second insulating film formed on the resultant structure, and a third conductive layer formed on the second insulating film. The Ta layer is placed in between the second conductive layer and both the Ti layer and the TiN layer to prevent the production of a metal oxide and nitrogen gas from a reaction between oxygen and the Ti and TiN layers.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: A conductive paste for producing an external electrode of a ceramic chip part and a multilayer ceramic capacitor having an external electrode produced by using the conductive paste, the conductive paste comprising powder of a conductive material, a glass frit, and an organic vehicle, the glass frit containing PbO, B.sub.2 O.sub.3, and SiO.sub.2 as major components and further containing from 1 to 20 wt % of at least one of TiO.sub.2 and Al.sub.2 O.sub.3.

Abstract: An integrated circuit includes a layered superlattice material having the formula A1.sub.w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+ak B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.

Abstract: A thick film conductor composition suitable for use in forming terminations for titanate-based MLCs comprising finely divided particles of:(a) electrically conductive precious metal and(b) metal oxide-based glass having a Dilatometer softening point of 400-700 C. comprising at least one glass modifier having an ionic field strength higher than the ionic field strength of the titanate cation, both (a) and (b) being dispersed in an organic medium.

Abstract: An encapsulant composition comprising a lead zinc silicoborate glass which forms a crystalline phase of Zn.sub.2 SiO.sub.4 and ZnB.sub.2 O.sub.4 when it is fired at 650.degree.-800.degree. C.

Abstract: A composition for the preparation of low-firing dielectric layers comprising an admixture of finely divided particles of:(a) MgTiO.sub.3 ;(b) 0-10% wt., basis total solids, CaTiO.sub.3 ;(c) 5-10% wt., basis total solids, zinc borate frit in which the atomic ratio of zinc to boron is 1-3, the frit containing 0-5% wt., basis total solids, BaO, and in which up to 50 mol % of the B.sub.2 O.sub.3 is replaced by Al.sub.2 O.sub.3 ;(d) 0-5% wt., basis total solids, of a barium compound selected from BaCO.sub.3, BaTiO.sub.3 and mixtures thereof; and(e) an amount of a divalent metal oxide or precursor thereof selected from MgO, CaO, ZnO and mixtures thereof in an amount approximately molarly equivalent to the amount of BaTiO.sub.3 in the composition, the total amount of Ba in the composition, calculated as BaO, being 1-5% wt. of the total solids, the solids being free of Pb-, Bi- and Cd-containing compounds.

Abstract: A method of manufacturing a miniaturized multilayer ceramic capacitor having high capacitance which comprises a dielectric body of the type that the grain boundaries thereof are insulated. Multilayer chips are prepared which consist of a semiconductor ceramic material whose major constituent comprises titanate of alkaline-earth metal such as Ba, Sr or the like; and such chips are placed within a container formed of a fired mixture of CuO and Al.sub.2 O.sub.3 and subjected to a heat treatment so that copper ions which serve as insulating agent, are caused to uniformly diffuse from vapor phase in crystal grain boundaries of the semiconductor ceramics body of each of the chips.

Abstract: This invention relates to a laminated capacitive element for use in electrical devices such as filtered connectors, said element comprising a laminated body of a metal substrate having one or more layered structures heat bonded to all or a portion of the surfaces thereof, said structures comprising a non-conductive layer composed of a sintered finely divided non-conductive material heat bonded to said metal substrate and a metal conductive layer composed of sintered finely divided metal heat bonded to said sintered non-conductive material.

Abstract: A touch control apparatus for an electric appliance has a plurality of conductive electrodes formed on a glass plate by heating a layer formed of a mixture of conductive powder and glass powder on a surface of the glass plate, the glass plate being used as a glass plate of an operation input section of the electric appliance. The heating produces an integral bonding of the layer and glass plate so that the control apparatus has a high mechanical strength and a long life and provides an electric appliance with a water-tight structure.

Abstract: A ceramic composition capable of sintering at a sufficiently low temperature to enable the use of a low cost base metal as the electrode material in the fabrication of capacitors. The major ingredient of the composition is expressed as Ba.sub.k-x M.sub.x O.sub.k TiO.sub.2, where M is one or more of magnesium, zinc, strontium, and calcium, and where k, and x are numerals in the ranges of 1.00 to 1.04, and 0.02 to 0.05, respectively. To this major ingredient is added a minor proportion of a mixture of boron oxide and at least one of barium oxide, magnesium oxide, zinc oxide, strontium oxide, and calcium oxide. For the fabrication of coherently bonded bodies of this composition, as for use as the dielectric bodies of capacitors, the moldings of the mixture of the major ingredient and additive in finely divided form are sintered in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere. The sintering temperature can be so low (typically from 1050.degree. to 1200.

Abstract: A ceramic composition capable of sintering at a sufficiently low temperature to enable the use of a low cost base metal as the electrode material in the fabrication of capacitors. The major ingredient of the composition is expressed as Ba.sub.k-x M.sub.x O.sub.k TiO.sub.2, where M is one or more of magnesium, zinc, strontium, and calcium, and where k, and x are numerals in the ranges of 1.00 to 1.04, and 0.02 to 0.05, respectively. To this major ingredient is added a minor proportion of a mixture of boron oxide, silicon dioxide, and, possibly, at least one of barium oxide, magnesium oxide, zinc oxide, strontium oxide, and calcium oxide. For the fabrication of coherently bonded bodies of this composition, as for use as the dielectric bodies of capacitors, the moldings of the mixture of the major ingredient and additive in finely divided from are sintered in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere.

Abstract: A ceramic composition capable of sintering at a sufficiently low temperature to enable the use of a low cost base metal as the electrode material in the fabrication of capacitors. The major ingredient of the composition is expressed as Ba.sub.k-x M.sub.x O.sub.k TiO.sub.2, where M is at least either of magnesium and zinc and where k and x are numerals in the ranges of 1.00 to 1.04 and of 0.02 to 0.05, respectively. To this major ingredient is added a minor proportion of a mixture of lithium oxide, silicon dioxide, and, possibly, at least one of barium oxide, calcium oxide, and strontium oxide. For the fabrication of coherently bonded bodies of this composition, as for use as the dilectric bodies of capacitors, the moldings of the mixture of the major ingredient and additive in finely divided form are sintered in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere. The sintering temperature can be so low (typically from 1050.degree. to 1200.degree. C.

Abstract: A ceramic composition capable of sintering at a sufficiently low temperature to enable the use of a low cost base metal as the electrode material in the fabrication of capacitors. The major ingredient of the composition is expressed as Ba.sub.k-x-y M.sub.x L.sub.y O.sub.k TiO.sub.2, where M is at least either of mag-nesium and zinc, L is at least either of strontium and calcium, k, x and y are numerals in the ranges of 1.00 to 1.04, 0.002 to 0.049, and 0.001 to 0.048, respectively, and x+y is a value in the range of 0.02 to 0.05. To this major ingredient is added a minor proportion of a mixture of lithium oxide, silicon dioxide, and, possibly, at least one of barium oxide, calcium oxide, and strontium oxide.

Abstract: This invention relates to ceramic high dielectric composition with BaTiO.sub.3 as host component; and by containing 1-5 weight part of CaTiO.sub.3 and 2-3 weight parts of Ta.sub.2 O.sub.5 to 100 weight parts of the BaTiO.sub.3, a composition having dielectric constant of 3000 or above, a small voltage dependency, a large bending strength and good high frequency characteristic is provided; and it has a good characteristic when used as thin film type dielectric body like laminated ceramic capacitor.

Abstract: A ceramic composition capable of sintering at a sufficiently low temperature to enable the use of a low cost base metal as the electrode material in the fabrication of capacitors. The major ingredient of the composition is expressed as Ba.sub.k-x-y M.sub.x L.sub.y O.sub.k TiO.sub.2, where M is at least either of magnesium and zinc, L is at least either of strontium and calcium, k, x and y are numerals in the ranges of 1.00 to 1.04, 0.002 to 0.049, and 0.001 to 0.048, respectively, and x+y is a value in the range of 0.02 to 0.05. To this major ingredient is added a minor proportion of a mixture of lithium oxide, silicon dioxide, and, possibly, at least one of barium oxide, calcium oxide, and strontium oxide.

Abstract: A ceramic composition capable of sintering at a sufficiently low temperature to enable the use of a low cost base metal as the electrode material in the fabrication of capacitors. The major ingredient of the composition is expressed as Ba.sub.k-x M.sub.x O.sub.k TiO.sub.2, where M is one or more of magnesium, zinc, strontium, and calcium, and where k, and x are numerals in the ranges of 1.00 to 1.04, and 0.02 to 0.05, respectively. To this major ingredient is added a minor proportion of a mixture of boron oxide, silicon dioxide, and, possibly, at least one of barium oxide, magnesium oxide, zinc oxide, strontium oxide, and calcium oxide. For the fabrication of coherently bonded bodies of this composition, as for use as the dielectric bodies of capacitors, the moldings of the mixture of the major ingredient and additive in finely divided form are sintered in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere.

Abstract: A ceramic composition capable of sintering at a sufficiently low temperature to enable the use of a low cost base metal as the electrode material in the fabrication of capacitors. The major ingredient of the composition is expressed as Ba.sub.k-x M.sub.x O.sub.k TiO.sub.2, where M is one or more of magnesium, zinc, strontium, and calcium, and where k, and x are numerals in the ranges of 1.00 to 1.04, and 0.02 to 0.05, respectively. To this major ingredient is added a minor proportion of a mixture of boron oxide and at least one of barium oxide, magnesium oxide, zinc oxide, strontium oxide, and calcium oxide. For the fabrication of coherently bonded bodies of this composition, as for use as the dielectric bodies of capacitors, the moldings of the mixture of the major ingredient and additive in finely divided form are sintered in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere. The sintering temperature can be so low (typically from 1050.degree. to 1200.

Abstract: A ceramic composition capable of sintering at a sufficiently low temperature to enable the use of a low cost base metal as the electrode material in the fabrication of capacitors. The major ingredient of the composition is expressed as Ba.sub.k-x M.sub.x O.sub.k TiO.sub.2, where M is at least either of magnesium and zinc and where k and x are numerals in the ranges of 1.00 to 1.04 and of 0.02 to 0.05, respectively. To this major ingredient is added a minor proportion of a mixture of lithium oxide, silicon dioxide, and, possibly, at least one of barium oxide, calcium oxide, and strontium oxide. For the fabrication of coherently bonded bodies of this composition, as for use as the dielectric bodies of capacitors, the moldings of the mixture of the major ingredient and additive in finely divided form are sintered in a reductive or neutral atmosphere and then reheated at a lower temperature in an oxidative atmosphere. The sintering temperature can be so low (typically from 1050.degree. to 1200.degree. C.

Abstract: A structure is provided, such as a capacitive transducer, utilizing two or more layers of semiconductor material wherein a highly insulating low capacitance bond is achieved by the invention herein between two adjacent layers by forming an inlay of glass in one layer and anodically bonding the other layer to the polished surface of the previously formed inlay.

Abstract: A non-reducible temperature compensation dielectric ceramic composition is disclosed, comprising (CaRe)(ZrTi)O.sub.3 and MnO.sub.2 and represented by the formula:(Ca.sub.1-x Re.sub.x).sub.m (Zr.sub.1-y Ti.sub.y)O.sub.3 +zMnO.sub.2where Re is at least one of Nd, La, Sm and Ce, 0<x<0.3, 0.ltoreq.y<0.2, 0.85<m<1.30, and 0.005<z<0.08 (expressed as a weight ratio with the weight of (Ca.sub.1-x R.sub.x).sub.m (Zr.sub.1-y Ti.sub.y)O.sub.3 as 1.00). The composition of the present invention is free from deterioration in insulation resistance and dielectric loss even if fired in a reducing atmosphere and can be fired over a wide temperature range of from 1,300.degree. to 1,400.degree. C. In production of capacitors using the composition of the present invention, inexpensive electrode materials such as nickel can be used and, thus, the composition of the present invention permits production of monolithic capacitor for temperature compensation.

Abstract: The strength of end terminations on multilayer capacitors employing base metal electrodes is increased by heating the terminations, subsequent to firing in a reducing atmosphere, in an atmosphere in which the oxygen partial pressure is at least equal to that of air for a period of at least 15 minutes at a temperature of 375.degree. C.-600.degree. C.

Abstract: A thick-film capacitor and a printed circuit are described, this capacitor being designed for implementation by printed-circuit technology, while the printed circuit contains capacitors of this type, together with the associated conducting paths.The capacitor dielectric comprises a screen-printable dispersion of dielectric filler substances in a polymeric material which can be cured at comparatively low temperatures, especially a polymeric resin from the group comprising polyurethane resins, polyester resins, epoxy resins and melamine formaldehyde resins. The use of a dielectric of this type enables lower curing temperatures to be used, in the region of approximately 200.degree. C., in contrast to conventional designs of thick-film capacitors with a dielectric containing a glass or ceramic frit, which require firing temperatures of the order of 1,000.degree. C.

Abstract: Monolithic ceramic capacitors exhibiting Q values of around 10,000 at 10 MHz have been made that sinter at 1100.degree. C. The buried electrodes are a 70 Ag/30 Pd alloy. The body has a high firing component and a low melting borate flux. The high firing component is a magnesium zinc titanate. The TCC of these capacitors is at least as low as 0.+-.60 ppm.

Abstract: Multilayer ceramic capacitors, and in particular NPO class capacitors are produced from dielectric compositions comprising a mixture of BaO, PbO, Nd.sub.2 O.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2 and one of the rare earth oxides selected from the group consisting of Pr.sub.6 O.sub.11 and Sm.sub.2 O.sub.3, the selected rare earth oxide being present in an amount ranging from approximately 10 to 100 wt. % of the amount of Nd.sub.2 O.sub.3 in the mixture. In one embodiment an acrylic binder is added to the mixture to produce ceramic sheets which are screen printed with a Pt-Pd-Au electrode, and then cut into thin layers, stacked, laminated, sintered and terminated to produce a multilayer capacitor having an extremely stable TC and effective dielectric constant as high as 120.

Abstract: An electroconductive paste consists essentially of 100 parts by weight of zinc in finely divided form, from about 0.01 to 15.00 parts by weight of an organic titanium compound such as, typically, tetrakisstearoxytitanium, and a vehicle, such as alpha-terpineol containing ethylcellulose as an organic binder, for pasting the mixture of the zinc powder and the organic titanium compound. The paste may contain an additive or additives such as the oxides of some metallic elements. By being baked on ceramic bodies at a temperature above the melting point of zinc, the paste forms conductors or electrodes of ceramic capacitors, varistors or the like. The conductors or electrodes thus prepared from the zinc paste are approximately equivalent in electrical and mechanical properties to those fabricated from the familiar silver paste.

Abstract: A condenser including a dielectric material exhibiting a ferroelectric phase wherein the dielectric constant-temperature characteristic of the condenser exhibits hysteresis loss of not more than 5% is provided. The dielectric constant-temperature characteristics are varied by regulating the particle diameter of the crystal and by providing an electrode material which reduces the loss. Hysteresis loss may also be reduced by including an oxide of a rare earth element or a metallic element of Group Va of the Periodic Table into a barium titanate dielectric component system.

Abstract: An electrical device having a nonlinear current-voltage characteristic is described which uses TiO.sub.2, a Group IIA element such as barium, calcium and strontium in an amount greater than 0.0 and generally less than approximately 1.0 mole percent, a Group VB element such as niobium in an amount generally less than 5.0 mole percent.

Abstract: Thick film dielectric compositions suitable for screen-printing comprising a perovskite, a bismuth-substituted pyrochlore, and a low temperature melting-devitrifiable glass. Upon firing the dielectric composition is highly hermetic.

Abstract: Monolithic capacitors having Q's of 3500 include copper electrodes buried in a non-reducible body that consists of a crystalline magnesium titanate phase and an intergranular glass phase. The crystalline phase contains magnesium meta-titanate and/or ortho-titanate. Magnesium di-titanate is excluded from the body as are the oxides of lead, bismuth and cadmium, which materials are reducible at the firing conditions necessary to preserve the integrity of the copper electrodes.

Abstract: The ceramic body of a monolithic ceramic capacitor consists of a granular barium titanate phase and a relatively low temperature melting intergranular phase. The body is capable of exhibiting a very high dielectric constant, e.g., over 5000, a Curie temperature of near 25.degree. C., and may be fired to maturity at 1150.degree. C. or lower and contain low cost buried electrodes. These properties obtain from a narrow range of compositions for which charge balance and large/small cation stoichiometry in the total formulation are found to be very critical. Cd, Zn, Cu, Li and Na are found to enter the grains as large acceptor cations on Ba sites and may be charge compensated by the small donor cations of charge +5, Bi, Sb, Nb and Ta or by the small donor cations of charge +6, W and Mo, on the Ti sites. At least 0.3 mole percent of glass-former cations are desirable for establishing a low melting flux during sintering but more than 2.2 mole percent glass-formers tends to reduce the dielectric constant.

Abstract: High-cadmium silicates, namely 2CdO.SiO.sub.2, 5CdO.2SiO.sub.2 and 3CdO.SiO.sub.2, are employed as the flux in a dielectric ceramic precursor mixture. The characteristic melting temperature of these fluxes is greater than the maximum ceramic firing temperature employed in the present method. Nevertheless, liquid phase sintering is achieved when such cations as the alkaline earth metals or lead from the high firing ceramic precursors diffuses into the flux, displacing some of the cadmium and reducing the melting temperature of the flux below that of the firing temperature. Some of the cadmium from the flux is drawn into the grains to replace the lost barium and lead. Escape of cadmium into the atmosphere is thereby substantially prevented. This method is particularly effective when the dielectric ceramic is a barium lead titanate zirconate and when the amount of the flux is kept very small.

Abstract: A monolithic ceramic capacitor having buried nickel electrodes is made by forming a paint of alkaline earth zirconates, a boron containing powder and an organic vehicle and binder. Nickel containing films are buried between dried and stacked layers of the paint. The stack is fired in a partial oxygen atmosphere at from 1200.degree. C. to 1400.degree. C. to produce a fully densified ceramic having a dielectric constant of greater than 30 and to provide a nickel electroded monolithic capacitor having a Q of greater than 1000 and a TCC of between .+-.30 ppm/.degree.C. or better.

Abstract: A dielectric paste for a thick film capacitor comprises barium titanate powder, glass frit, magnetite powder, an organic vehicle and a surface-active agent. A dielectric constant higher than 1,100 is obtained by firing at a temperature of 900.degree. C. or lower.