Abstract: In a method for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal from the detector upon detection of the electron beam. A deflection electrode is also used to deflect the electron beams according to an electric or magnetic field to perform charge shifting, logical additions, logical multiplications, image formation, and the like.

Abstract: A electron beam row at a time addressed storage target includes substrate with a plurality of column electrodes affixed to the substrate by a suitable means. Adjacent column electrodes are displaced by a first period.The target includes a grid for collecting secondary electrons generated by bombarding the secondary electron emission means affixed to the substrate with a plurality of electron beams. Each beam strikes the target at a beam landing area. The beam landing areas of adjacent electron beams are displaced by the first period.The beam landing areas are positioned so each beam landing area is overlapped by a respective column electrode. A respective potential difference is applied between each electrode and the grid. Charge acquired by the target at each beam landing area is dependent upon the respective potential difference applied between the electrode which overlaps the beam landing area and the grid. Charge transfer is an equilibrium process involving secondary emissions.

Abstract: A storage device including many field emitters in close proximity to a storage medium, and a micromover, all in a partial vacuum. Each field emitter can generate an electron beam current. The storage medium has many storage areas on it, with each field emitter responsible for a number of storage areas. Also, each storage area can be in a number of different states to represent the information stored in that area. In storing information to the storage device, the power density of an electron beam current is increased to change the state of the storage area bombarded by the electron beam current. In reading information from the device, the power density of the electron beam current is reduced to generate a signal current from the storage area bombarded by the electron beam current. During reading, the power density is selected to be low enough so that no writing occurs. The magnitude of the signal current depends on the states of the storage area.

Abstract: A recording and reproducing method for binary coded information and a suitable recording medium are described, which use endohedrally doped cagelike molecules 30, especially fullerenes and derivatives thereof, as storage elements. By applying a probing tip 36 to the molecule for the read/write process an enhanced storage density is achieved.

Abstract: A data storage device including a substrate, a data storage layer on the substrate, and a spin-polarized electron source. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value.

Abstract: An information recording and/or reproducing apparatus records and reproduces information with probes. The apparatus includes probes made of an elastic body, a recording medium which oxidizes in portions where an electric current flows in the atmosphere to form recording bits, a device for moving the probes relative to the recording medium, and a device for applying a recording voltage between the probes and the recording medium for forming the recording bits.

Abstract: An information processor for performing at least one of recording information at a high density, reproducing and erasing information by applying the principle of a scanning tunnel microscope (STM) or an atomic force microscope (AFM) and an information processing method using the information processor. The information .processor is used with a recording medium comprising a recording layer having a characteristic of one of an insulator and a semiconductor. The processor includes a substrate electrode in the recording medium, at least one probe electrode disposed close to the recording medium, and at least one of a circuit for applying an information recording pulse voltage and a circuit for applying an information reproducing pulse voltage. A maximum difference in surface level of a 1.times.1 .mu.m surface region of the substrate electrode is 1 nm or less, and the radius of curvature of a tip of the probe electrode is in the range of 0.1 to 200 .mu.m.

Abstract: A recording and reproducing method writes information in the form of bits by the physical interaction between a probe and a recording medium opposed to the probe. The method includes a recording step of recording information by shifting a forming position of each bit by a predetermined shift amount in a horizontal direction of the recording medium in accordance with information, and a reproducing step of reproducing the information, based on the shift amount of each recorded bit in the horizontal direction of the recording medium. A recording and reproducing apparatus is so constructed as to perform the steps.

Abstract: A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field.

Abstract: A method for recording and reproducing information using an optical memory device being constituted by a transparent substrate, a recording film formed on the substrate and made of a resin containing a photochromic material dispersed therein, the photochromic material being capable of reversibly changing its state from achromatic to chromatic and absorbing light of at least 780 nm wavelength in the chromatic state, and a reflecting film formed on the recording film for reflecting light, the method including the steps of: applying a visible light beam of a long wavelength onto the optical memory device to turn said recording film into the achromatic state for initialization, applying thereafter a visible light beam of a short wavelength onto the optical memory device to turn the recording film into the chromatic state in accordance with binary-coded data of information for recording the information, and applying another visible light beam of a long wavelength having a light intensity lower than that of the vis

Abstract: A high density storage medium which stores predetermined information by matching it on one-to-one basis with multiple levels of depth or height formed in predetermined plural areas of substrate surface, a storing method, a reading method and various systems using them have been disclosed.

Abstract: The scanning of an operating integrated circuit (IC) substrate by an electron (e)-beam is detected by providing conductive plates in the substrate, and triggering a charge-sensitive mechanism such as a field effect transistor (FET) when an e-beam has scanned over the plate. The plates can be fabricated at different levels within the substrate, with a lower plate preferably shaded from the e-beam by an upper plate and providing a reference for the upper plate. E-beam detection occurs either through the positive or negative charging of capacitances associated with the FETs, or from instantaneous negative or positive current flows from the detector plates; a latch is actuated to hold an instantaneously detected current level exceeding a predetermined threshold. The logic state of this latch can be used to modify the functional operation of the IC in real time.

Abstract: In order to effect the reading-out of a signal from a recording medium at a high speed and without the collision of a probe electrode, the control of the spacing between the probe electrode and the signal recording layer of the recording medium is effected by sampling a tunnel current detected by the probe electrode at the timing of a reproduction clock, and reproduction is effected with this sampled value as a reference. Also, in order to effect information recording with good reproducibility and at high density, the control variable of a servo control circuit for controlling the spacing between the probe electrode and the recording layer is changed over during the periods before and after a writing pulse is applied to the probe electrode. Also, in order to effect re-recording reliably, the prior recorded state at the re-writing position is detected, and from the result of this detection, an optimal servo control variable, the waveform of a pulse voltage applied, etc. are set.

Abstract: In a method and apparatus for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal from the detector upon detection of the electron beam. In the method and apparatus, a deflection electrode is also used to deflect the electron beams according to an electric or magnetic field to perform charge shifting, logical additions, Logical multiplications, image formation, and the like.

Abstract: A memory device whose media scanning is vibrationally (cyclic harmonic vibration) or inertially (one-time pulsed read/write) driven is provided, comprising a plurality of cantilevers (7, 7', 7"), attached at one end and capable of vibrating. On the opposite end of each cantilever is disposed an array of storage bits (26). Opposite the surface of each cantilever having such a bit array is a read/write head (27) which is similar in nature to a scanning tunneling microscopy or atomic force microscopy scanning-tip. Electronic support circuitry is provided to implement the memory device of the invention. Such circuitry includes a microprocessor (67), a multiplexer/demultiplexer (70), a group of circuits (66) comprising power supplies, sensing circuits and digital/analog and analog/digital conversion circuits, and switching means (65) to permit all of the previous functions to be properly addressed to/from the correct bit/array(s) and mating subdevice(s).

Abstract: A method and apparatus for recording and reading information in a recording medium comprising a thin film of an organic compound having polymorphisms. The free energy of each polymorphism is different with each other. Information is recorded in the recording medium by applying energy to the recording medium and transferring locally the polymorphism of the organic compound to another polymorphism of the organic compound. The amount of the energy corresponds to the difference in free energy between the polymorphisms. Information is read from the recording medium by optically discriminating between the optical absorption properties of the polymorphisms.

Abstract: The search position encoder includes a generally planar medium, a search probe and a device for moving the probe generally parallel to the surface of the planar medium, and indexing device for locating the actual position of the probe relative to a fixed location on the generally planar medium. A plurality of gratings consisting of alternating strips of conducting and non-conducting materials are arranged on or adjacent to the medium parallel to orthogonal axes of the medium, and a device for sensing the movement of the probe in a plane parallel to the gratings. The location of the probe may then be determined based upon the sensing of the passage of the probe relative to the gratings.

Abstract: An organic thin film element is disclosed which has an organic thin film consisting of a mixed stacked charge-transfer complex of donor and acceptor molecules, wherein the organic thin film is made neutral by forming the mixed stacked charge-transfer complex which is ionic under the bulk state into a thin film.

Abstract: A memory device whose media scanning is vibrationally (cyclic harmonic vibration) or inertially (one-time pulsed read/write) driven is provided, comprising a plurality of cantilevers (7, 7', 7"), attached at one end and capable of vibrating. On the opposite end of each cantilever is disposed an array of storage bits (26). Opposite the surface of each cantilever having such a bit array is a read/-write head (27) which is similar in nature to a scanning tunneling microscopy or atomic force microscopy scanning-tip. Electronic support circuitry is provided to implement the memory device of the invention. Such circuitry includes a microprocessor (67), a multiplexer/demultiplexer (70), a group of circuits (66) comprising power supplies, sensing circuits and digital/analog and analog/digital conversion circuits,and switching means (65) to permit all of the previous functions to be properly addressed to/from the correct bit/array(s) and mating subdevice(s).

Abstract: The present invention relate to an atomic scale electronic switch wherein the position of one or more atoms (12, 20) or molecules is varied to control the state of the switch. Terminals (10, 11, 21-23) may be tips of scanning tunneling microscopes or STMs. A change in position of the switch will result in a change in conductance between the spaced apart terminals. Voltage or current pulses cause the switching element (12) to change positions.

Abstract: The invention is a method and device providing very high density information storage on an organometallic charge transfer data storage medium. The medium is switched from one state to another through the application of an electric field to the medium by the probe tip of a scanning tunneling microscope resulting in an observable change in the electron density of the surface of the medium. A STM tip is used to write, read and erase data via the organometallic charge transfer medium (e.g. TCNQ, or derivatives thereof).

Abstract: Provided is a method for reading information recorded in an information layer comprised of a fluorescent dye. In order to read the recorded information, the tip of a scanning tunneling microscope is passed over the information layer, said scanning tunneling microscope being of sufficient voltage to excite the fluorescent dye material to an excited state. Upon return of the dye material to ground state, fluorescence results. By measuring the fluorescence, or absence thereof, the recorded information can be deciphered.

Abstract: A microprobe is constituted by a single crystal having an apex portion surrounded by facets having specific place directions and having specific crystal faces. The microprobe is provided on a part of a main surface of a substrate or a part of a thin film formed on the main surface. In one embodiment the microprobe is provided with a source electrode, a gate electrode, a drain electrode and a thin resistance, so as to form an MOS transistor for amplifying the microprobe.

Abstract: A data storage apparatus includes a first lever body having a piezoelectric driving section, and a second lever body which is disposed to separate from and to be perpendicular to the first lever body, and has a piezoelectric driving section. A recording medium is formed on a portion of the second lever body, and records desired data. A plurality of probes are disposed on a portion of the first lever body to oppose the recording medium at a predetermined interval, and detect a change in state at predetermined positions on the recording medium as a change in tunnel current or a change in three-dimensional pattern. A voltage applying circuit alternately applies predetermined voltages to the piezoelectric driving sections of the first and second lever bodies to separately drive the plurality of probes in different directions, thereby three-dimensionally scanning the recording medium.

Abstract: Provided is a method of reading information contained in an information medium by utilizing a scanning, tunneling microscope in conjunction with a substrate layer which fluoresces when high energy electrons pass into contact therewith. The method comprises providing an information medium comprised of an information layer which contains a track of information bits and the fluorescing substrate layer. A tip of a scanning tunneling microscope is then passed over the information layer, with the resulting fluorescence being measured. By utilizing the unique resolution available from the scanning tunneling microscope and the fluorescence of the substrate layer in order to read the information recorded, a surprisingly accurate and efficient method is achieved for reading highly densified information.

Abstract: A method of and a device for sub-micron deforming a surface (15) is described, for example for the purpose of inscribing information. During scanning of the surface the tip (14) of a scanning tunneling microscrope is held at a constant distance from the surface by means of a negative feedback control loop (18) which is controlled by a tunneling current (It) between the tip and the surface, and for forming a pit (21) in the surface (15). The control loop is deactivated and a tip height drive member (8) is energized by means a control voltage (Vpz) whose amplitude increases as a function of time and which has a predetermined final value, such that the tip is lowered into the material.

Abstract: A flat panel apparatus for and a method of addressing data storage locations (80) employs a row-scanning electron beam (76) to address simultaneously a row (120) of such storage locations and thereby store data in and read data out of them. The storage locations are defined by the overlapping areas of multiple column electrodes (62) extending in a common direction on a first substrate (82) and rows addressed by the electron beam and extending in a common direction on a second substrate (54). A layer of dielectric material (52) separate the first and the second substrates, which are positioned face-to-face and spaced-apart with the direction of the addressed rows transverse to that of the column electrodes. The column electrodes receive data drive signals.

Abstract: The memory device comprises a recording member in which perturbations are selectively formed, a probe for detecting the presence or absence of the perturbations, a first cantilever having the recording member at a forward end, and a second cantilever having the probe needle at a forward end. The probe is supported by the first and second cantilevers at a relative position in close proximity to and spaced from the recording member. Independent drive of the first and second cantilevers permits the probe to be scanned relatively across the recording member over a wide range.

Abstract: A scanning system for optoelectronically recorded signal patterns stored in a plural layer medium consisting of inorganic materials throughout and featuring a dielectric storage layer at the surface which faces an electron beam source. The source beam first searches for a position mark associated with an image frame on the medium in order to establish a precise home position of the beam and associated coordinate axes prior to commencing the scan operation on that medium frame. Then the beam scans a raster on the medium spending a certain dwell time at each resolution element of the raster. Each time a frame is reached, the system is capable of altering the beam current in response to a pre-recorded exposure code in order to achieve the optimal retrieval of all information stored image-wise within said frame.

Abstract: A novel electron beam addressible recording device is disclosed, in which a recording layer formed of ferroelectric material having secondary electron emissivity .delta. greater than 1 is provided in a vacuum chamber. One surface of the recording layer is applied with a predetermined potential and the other surface is caused to have different potentials from the predetermined potential by scanning it with an electron beam. The difference of the potentials between two surfaces of the recording layer, causes poling patterns corresponding to the data recorded to be formed. The recorded data in the form of poling direction can be detected by electron beam scanning.

Abstract: An electron beam recording medium with a coating, which is applied to a substrate, is sensitive to electron beam radiation and has an organic rare earth metal type phosphor, is suitable for the irreversible writing of information with low-intensity electron beams.

Abstract: An output section comprising a needle which has a fine tip portion. A data stored in a memory is read out by applying electrical stimulation between the tip portion of the needle and the memory. A memory reading apparatus enables non-contact reading on an atomic or molecular scale.

Abstract: A recording and readout information system having atomic scale densities comprises a recording medium having a carrier and means to form a pattern of atomic particles on the surface of the carrier. The atomic particles having an affinity for the carrier and can adhere to the surface to form a relatively adhesive and stable bond. The pattern of atomic particles produced on the carrier are representative of recorded information, e.g. binary represented information, of ultra high density based upon the size and spacing of such particles, which is in the range, for example of 5 .ANG. (0.5 nm) to 10 .ANG. (1 nm). A preferred embodiment of the invention comprises a recording medium with an adsorbent carrier, means to form a pattern of adsorbate atomic particles on the surface of the adsorbent carrier, the absorbate atomic particles having an adsorptive affinity for the adsorbent carrier.

Abstract: A scanning system for optoelectronically recorded signal patterns stored in a plural layer medium consisting of inorganic materials throughout and featuring a dielectric storage layer at the surface which faces an electron beam source. The source beam first searches for a position mark associated with an image frame on the medium in order to establish a precise home position of the beam and associated coordinate axes prior to commencing the scan operation on that medium frame. Then the beam scans a raster on the medium spending a certain dwell time at each resolution element of the raster. Each time a frame is reached, the system is capable of altering the beam current in response to a pre-recorded exposure code in order to achieve the optimal retrieval of all information stored image-wise within said frame.

Abstract: A recording and readout information system having atomic scale densities comprises a recording medium having a carrier and means to form a pattern of atomic particles on the surface of the carrier. The atomic particles having an affinity for the carrier and can adhere to the surface to form a relatively adhesive and stable bond. The pattern of atomic particles produced on the carrier are representative of recorded information, e.g. binary represented information, of ultra high density based upon the size and spacing of such particles, which is in the range, for example, of 5 .ANG. (0.5 nm) to 10 .ANG. (1 nm). A preferred embodiment of the invention comprises a recording medium with an adsorbent carrier, means to form a pattern of adsorbate atomic particles on the surface of the adsorbent carrier, the adsorbate atomic particles having an adsorptive affinity for the adsorbent carrier.

Abstract: An electronic memory device is disclosed which utilizes silicon-on-sapphire SOS) transistors that exhibit binary states dependent upon the dose of ionizing radiation to which they are subjected. A memory utilizing such SOS transistors may have information written into it, permenently or for a short period of time, by electron-beam bombardment so that the memory operates as a PROM. The memory may also operate as a RAM when a scanning electron beam, in conjunction with appropriately applied biases, is used to read and write information at a high rate.

Abstract: An apparatus for and a method of addressing data storage locations (80) employs an electron beam (76) to address such storage locations and thereby store data in and read data out of them. The storage locations are defined by the overlapping areas of multiple column electrodes (62) extending in a common direction on a first substrate (82) and rows (120) addressed by an electron beam (76) and extending in a common direction on a second substrate (54). A layer of dielectric material (52) separates the first and the second substrates, which are positioned face-to-face and spaced-apart with the direction of the addressed rows transverse to that of the column electrodes. The column electrodes receive data drive signals. The addressing apparatus is configured so that for each storage location secondary electrons emitted by the electron beam striking the location function as an electrical switch that changes between a conducting state and a nonconducting state in response to the presence of the electron beam.

Abstract: The storage unit comprises an array of tunnel tips (13) arranged at tunneling distance from a recording surface (2a) of a storage medium (2) which is capable of permitting digital information to be written or read through variations of the tunneling current. The storage medium (2) is attached to the free end of a piezoceramic bendable tube (3). In operation, the free end of the tube (3) is moved in a circular orbit by repetitive sequential energization of oppositely arranged pairs of 90.degree. phase shifted electrodes (4,6 and 5,7). This tube movement causes each tunnel tip (13) to scan a respective unique associated annular area of the storage medium (2). To address a particular concentric track in a particular annular area, tunneling current is applied to the associated tip (13) via respective electrodes (16,18) while, concurrently, a potential is applied via electrodes (4,6 and 5,7) to tube (3) of a magnitude corresponding to the desired orbital diameter for the tube.

Abstract: A recording and readout information system having atomic scale densities comprises a recording medium having a carrier and means to form a pattern of atomic particles on the surface of the carrier. The atomic particles having an affinity for the carrier and can adhere to the surface to form a relatively adhesive and stable bond. The pattern of atomic particles produced on the carrier are representative of recorded information, e.g. binary represented information, of ultra high density based upon the size and spacing of such particles, which is in the range, for example, of 5 .ANG. (0.5 nm) to 10 .ANG. (1 nm). A preferred embodiment of the invention comprises a recording medium with an adsorbent carrier, means to form a pattern of adsorbate atomic particles on the surface of the adsorbent carrier, the adsorbate atomic particles having an adsorptive affinity for the adsorbent carrier.

Abstract: A recording and readout information system having atomic scale densities comprises a recording medium having a carrier and means to form a pattern of atomic particles on the surface of the carrier. The atomic particles having an affinity for the carrier and can adhere to the surface to form a relatively adhesive and stable bond. The pattern of atomic particles produced on the carrier are representative of recorded information, e.g. binary represented information, of ultra high density based upon the size and spacing of such particles, which is in the range, for example, of 5 .ANG.(0.5 nm) to 10 .ANG.(1 nm). A preferred embodiment of the invention comprises a recording medium with an adsorbent carrier, means to form a pattern of adsorbate atomic particles on the surface of the adsorbent carrier, the adsorbate atomic particles having an adsorptive affinity for the adsorbent carrier.

Abstract: The charge transfer apparatus of the present invention comprises an optical storage medium of either a mixture of several charge transfer compounds of varying redox potential or a single amphoteric organic charge transfer compound capable of undergoing a multistage charge transfer reaction, and a source of optical energy, typically a laser. When the optical energy illuminates a spot on the optical storage medium, the spot switches to one of a plurality of optically detectable states.

Abstract: An information writing method of an optical recording device selectively irradiates light on an optical recording medium, having a thin organic film containing donor and acceptor molecules, and a pair of electrodes for applying a voltage to the thin organic film, in order to cause charge transfer between the donor and acceptor molecules, and records a change in optical or electric characteristics of the thin organic film by the charge transfer as information. Selective light irradiation is performed while a voltage is applied to the electrodes.

Abstract: An electron beam memory system in which a phase transition type recording film is used as an information recording medium, and for recording information, a focused electron beam is selectively projected on desired positions of the recording film so as to locally heat the recording film and cause phase transition, while for retrieving information, an electron beam having energy at a degree not causing the phase transition is projected so as to utilize the fact that reflection or diffraction of the primary electron beam projected at the retrieval differs between the recorded regions and unrecorded regions.

Abstract: A method for recording and reproducing information includes the steps of regularly arranging fine grains having a size less than 0.1 .mu.m on a substrate, which fine grains may be evaporated by being irradiated with electron beams, irradiating predetermined locations of the grain coated substrate by an electron beam modulated in response to information to be recorded by the method, by selectively evaporating fine grains at the predetermined locations irradiated by the electron beam, and irradiating the substrate on which information is recorded with the electron beam to detect the presence or absence of fine grains in order to reproduce the previously recorded information. According to the above described system, large recording densities may be obtained, such as approximately 10.sup.12 bits/cm.sup.2.

Abstract: A memory element for an electron beam target comprising an electrically insulating support laminated to a conductive layer which, in turn, is laminated to a dielectric surface layer having a thickness less than 1 micrometer, e.g. 0.04-0.8 micrometer, a resistivity of at least 10.sup.16 ohm-cm and a dielectric strength of at least 10.sup.5 volts/cm; said dielectric surface layer comprising a material sensitive to electron beam irradiation and provided, essentially coplanar with its exposed surface, with focusing means or indicia in the form of shaped patterns that provide reference points for locating recording or retrieval points during electron beam exposure and scanning of the target surface.Writing is accomplished by irradiating with an electron beam either to develop a charge pattern or to alter the state of polymerization of cross-linking or both in a prescribed pattern for transmitting data.

Abstract: The information recorded in the data carrier in the form of a locally variable electric polarization is scanned and selected by means of an electron beam. For this purpose, the secondary electrons produced on the surface of the data carrier are used. The data carrier is simultaneously either periodically heated by radiating electromagnetic waves or charged with ultrasonics. Potential fluctuations of equal frequency thereby arise on the surface of the data carrier dependent on local polarization, which fluctuations result in a modulation of the secondary electrons. The secondary electron flow thus receives information via the polarization conditions stored in the data carrier. To recover this information, the secondary electron flow is frequency-selectively amplified and electronically evaluated according to amount and/or phase. A polyvinylidene flouride film (PVDF) is preferably used as data carrier.

Abstract: An electron beam memory system comprises a substrate mounted for rotation and supporting an information storage medium. Means are provided for rotating the substrate. An electron gun comprises a field emission cathode having an emitting tip, anode means, and means for developing and applying between the tip and the anode means a predetermined accelerating potential for forming a high brightness electron source at the tip and for causing an electron beam to be formed through the anode means. The gun includes focus lens means for receiving the beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom.

Abstract: A rapid random accessed electron beam memory system comprises a disc mounted for rotation and supporting an information storage medium. An electron gun is mounted for movement across the disc. The gun has ultra-compactness and extremely low mass, yet is capable of developing a finely focused electron beam probe at high beam current densities. The gun comprises a low-mass field emission cathode, the cathode having an emitting tip and being adapted to receive a predetermined electrical potential to form a high brightness electron source at the tip. An electrostatic focus lens forms a real image of the electron source in the vicinity of the storage medium. The lens comprises a first electrode adapted to receive a predetermined second electrical potential which is positive relative to the potential on the tip and has a value effective to extract electrons from the tip. The electrode defines a relatively small aperture for deforming the diameter of an electron beam which is formed.

Abstract: In a vacuum, recording is conducted by exposing a solid surface to a neutral particle beam or an ion beam modulated with a recording signal and converged, thereby to locally develop a change in composition on the solid surface. Then, reproducing is conducted by exposing said solid surface to an electron beam, an ion beam or a neutral particle beam which has been converged, thereby to emit electrons from the solid surface, and detecting the emitted electrons to read out the change in composition. If necessary, erasing is conducted by exposing the solid surface to the same beam as used in reproducing, thereby to eliminate the change in composition.

Abstract: An ultra-compact electrostatic electron gun includes integrated beam-modifying means for use in electron beam memory systems, electron microscopes, electron lithographic devices and the like. The gun is illustrated as comprising means forming a point source of electrons and means receiving electrons from the point source for defining an electron beam. Electrostatic lens means receives the beam and forms a beam focus. An integrated magnetic field-generating means establishes a field of magnetic flux through the electrostatic lens for modifying the position, cross-sectional shape or other characteristic of the beam.