Abstract: A magnetic device includes a fixed layer including a fixed pattern, a free layer, and a tunnel barrier between the fixed layer and the free layer. The fixed pattern includes a first magnetic pattern, a second magnetic pattern, and a hybrid spacer, including a nonmagnetic material layer, between the first magnetic pattern and the second magnetic pattern, the nonmagnetic material including a plurality of magnetic nanoparticles dispersed therein.

Abstract: Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.

Abstract: Some embodiments include an integrated assembly having a first semiconductor structure containing heavily-doped silicon, a germanium-containing interface material over the first semiconductor structure, and a second semiconductor structure over the germanium-containing interface material. The second semiconductor structure has a heavily-doped lower region adjacent the germanium-containing interface material and has a lightly-doped upper region above the heavily-doped lower region. The lightly-doped upper region and heavily-doped lower region are majority doped to a same dopant type, and join to one another along a boundary region. Some embodiments include an integrated assembly having germanium oxide between a first silicon-containing structure and a second silicon-containing structure. Some embodiments include methods of forming assemblies.

Abstract: Various embodiments include an electrolysis method comprising: applying a pulsed voltage or a pulsed current between an anode and a cathode; repeatedly measuring a respective current OCP at the cathode in a zero-current state relative to a reference system; and controlling the pulsed voltage or the pulsed current so a working potential of the cathode in the current-carrying state with respect to the reference system has a defined progression relative to the respective current OCP. The defined progression includes a first phase at a cathodic level and a second phase at an anodic level.

Abstract: A light-emitting apparatus can reduce a number of undriven or underdriven uLEDs in a uLED die. A method can include providing, by a power supply and during a first time, electrical power with a first voltage sufficient to operate a majority of micro light emitting diodes (uLEDs) of a uLED die to respective uLED drivers of the uLED die, driving the majority of uLEDs of the uLED die using the uLED drivers during the first time, providing, by the power supply and during a second time after the first time, electrical power with a second voltage, the second voltage higher than the first voltage and sufficient to operate uLEDs of the uLED die that are not operable by the first voltage, and driving the majority of the uLEDs and the uLEDs of the uLED die that are not operable by the first voltage during the second time.

Abstract: A cathode can include: an electrode substrate; a porphyrin precursor attached to the substrate; and an enzyme coupled to the electrode substrate to be associated with the porphyrin precursor, the enzyme reduces oxygen. The cathode can include a conductive material associated with the porphyrin precursor and/or the enzyme. The cathode can include 1-pyrenebutanoic acid, succinimidyl ester (PBSE) associated with the porphyrin precursor and/or the enzyme and/or the conductive material. The cathode can include 2,5-dimethyl-1-phenyl-1H-pyrrole-3-carbaldehyde (DMY-Carb) associated with the 1-pyrenebutanoic acid, succinimidyl ester (PBSE) and/or the porphyrin precursor and/or the enzyme and/or the conductive material. The porphyrin precursor is attached to the substrate through covalent coupling.

Abstract: An electrochromic device reversibly and controllably colored and decolored by electricity is provided. The electrochromic device is configured to control at least one of the following functions f1 and f2 based on at least one of an operating environment temperature of the electrochromic device, a continuous elapsed time of a colored state or a decolored state, and an illuminance around the electrochromic device: a function f1 of transiting to a colored state and/or limiting transition to a decolored state; and a function f2 of transiting to a decolored state and/or limiting transition to a colored state.

Abstract: A method for etching a light absorbing material permits directly writing a pattern of etching of silicon nitride and other light absorbing materials, without the need of a lithographic mask, and allows the creation of etched features of less than one micron in size. The method can be used for etching deposited silicon nitride films, freestanding silicon nitride membranes, and other light absorbing materials, with control over the thickness achieved by optical feedback. The etching is promoted by solvents including electron donor species, such as chloride ions. The method provides the ability to etch silicon nitride and other light absorbing materials, with fine spatial and etch rate control, in mild conditions, including in a biocompatible environment. The method can be used to create nanopores and nanopore arrays.

Abstract: An optoelectronic device including light-emitting diodes (LED), each light-emitting diode including a semiconductor element corresponding to a nanowire, a microwire, and/or a nanometer- or micrometer-range pyramidal structure, and a shell at least partially covering the semiconductor element and adapted to emit a radiation and for each light-emitting diode, a photoluminescent coating including a single quantum well, multiple quantum wells or an heterostructure, covering at least part of the shell and in contact with the shell or with the semiconductor element and adapted to convert by optical pumping the radiation emitted by the shell into another radiation.

Abstract: According to certain implementations of the present disclosure, an input circuit provides one or more reference paths and bit paths for sense amplifier circuit operations. In one implementation, the input circuit includes a reference path, a bit path, and a CMOS resistor. The reference path includes a first MTJ device and a first access device, where the reference path is coupled to the sense amplifier via a first input terminal. The bit path includes a second MTJ device and a second access device, where the bit path is coupled to the sense amplifier via a second input terminal. In certain implementations, the CMOS resistor is coupled to one of the reference path or the bit path.

Abstract: The present invention relates to a variable resistor comprises a first electrode, a second electrode, and a resistive switching layer disposed between the first electrode and the second electrode, wherein the resistive switching layer has a Brown-Millerite structure crystallized in an inclined orientation across the first electrode and the second electrode as an initial structure.

Abstract: A method is presented for mitigating conductance drift in intercalation cells for neuromorphic computing. The method includes forming a first electro-chemical random access memory (ECRAM) structure over a substrate and forming a second ECRAM over the substrate, the first and second ECRAMs sharing a common contact. The common contact can be either a source contact or a drain contact. Each of the first and second ECRAMs can include a tungsten oxide layer, an electrolyte layer, and a gate contact.

Abstract: Provided herein are mechanically interlocked air-stable persistent organic radicals. The radical compositions may access a multiplicity of radical, cationic redox states as well as a fully cationic redox state. A composition comprises a first ring mechanically interlocked with a second ring or a salt thereof, wherein the first ring comprises a 4,4?-bipyridinium subunit or a derivative thereof and a diazapyrenium subunit or a derivative thereof and the second ring comprises a 4,4?-bipyridinium subunit or a derivative thereof. In some embodiments, the second ring further comprises a diazapyrenium subunit or a derivative thereof. Methods of preparing the compositions are also provided.

Abstract: In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.

Abstract: A phase change memory device includes first conductive rails laterally extending along a first horizontal direction over a substrate, a rectangular array of memory pillar structures overlying top surfaces of the first conductive rails, and second conductive rails laterally extending along a second horizontal direction and overlying top surfaces of the rectangular array of memory pillar structures. Each memory pillar structure includes a vertical stack of structural elements including, from one end to another, a selector-side conductive element, a selector element, a selector-memory conductive element, a phase change memory element, and a memory-side conductive element. At least one structural element within the vertical stack is a laterally constricted structural element having laterally recessed sidewalls relative to sidewalls of a respective immediately vertically underlying structural element.

Abstract: Systems, devices, methods, and compositions are described for providing an actively controllable implant configured to, for example, monitor, treat, or prevent microbial growth or adherence to the implant.

Abstract: Systems and methods are provided for environment sensing. The system includes a sensor node having a sensor. The sensor includes a sensing material configured to be in contact with an ambient environment. The system includes a remote system having a communication circuit and a controller circuit. The communication circuit is configured to be wirelessly communicatively coupled to the sensor node. The controller circuit electrically coupled to the communication circuit. The controller circuit configured to receive an impedance response of the sensing material and analyze the impedance response of the sensing material at frequencies that provide a linear response of the sensing material to an analyte of interest and at least partially reject effects of interferences.

Abstract: A dampening fluid useful in offset ink printing applications contains water and a surfactant whose structure can be altered. The alteration in structure aids in reducing accumulation of the surfactant on the surface of an imaging member. The surfactant can be decomposed, switched between cis-trans states, or polymerizable with ink that is subsequently placed on the surface.

Abstract: Carbon nanotube template arrays may be edited to form connections between proximate nanotubes and/or to delete undesired nanotubes or nanotube junctions.

Abstract: An ultrasonic measurement apparatus includes: a first phasing addition circuit that receives electric signals output from a plurality of reception ultrasonic elements, shifts the plurality of electric signals in a time axis direction to combine the plurality of electric signals, and outputs a composite signal; a second electro-optical conversion unit and a second light emitting unit that receive the composite signal, convert the composite signal into an optical signal, and output the optical signal; an optical cable through which the optical signal is transmitted; and a second light receiving unit and a second photoelectric conversion unit that receive the optical signal and converts the optical signal into an electric signal. The second light emitting unit outputs the optical signal after the first phasing addition circuit outputs the composite signal.

Abstract: Nanomaterials fabricated to pharmaceutical dosage forms are disclosed. The nanomaterials are useful to provide a plurality of analysis to the dosage form. Consequently, the nanomaterials provide a means to perform quality testing on a continuous basis throughout the supply chain, including the cold chain whereby manufacturers and distributors can achieve greater product integrity and longer shelf life and ultimately minimize cost. The end user benefits in obtaining the highest quality drugs at the time of need.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Abstract: Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.

Abstract: A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.

Abstract: A method is provided for modifying a surface of a solid conducting material, which includes applying a potential difference between this surface and a surface of another conducting solid material positioned facing it, and wherein, simultaneously, the surface (S) is put into contact with a liquid medium comprising in solution triarylamines (I): while subjecting these triarylamines (I) to electromagnetic radiation, at least partly converting them at into triarylammonium radicals. Also provided is a conducting device which includes two conducting metal materials, the surfaces of which, (S) and (S?) respectively, are electrically interconnected through an organic material comprising conducting fibrillar organic supramolecular species comprising an association of triarylamines of formula (I).

Abstract: A membrane filter 26 is disclosed comprising cellulous material 23 allowing the transition of fluid therethrough, and, in a substantially dry state, said membrane comprising also a salt of deoxycholic acid. Optionally, the air side of the membrane (the side facing away from the screen or belt used to manufacture the membrane) faces the sample fluid during use of the membrane. A method of manufacture of the membrane material is disclosed also, employing deoxycholic acid as a surfactant, to improve the recovery rate of the membrane filter in use.

Abstract: There is provided an sensing device, comprising: a substrate; a sensor ink printed onto the substrate; a conductive polymer ink printed onto the sensor ink; a conductive carbon paste formed on the polymer ink; and a conductive silver ink printed on the conductive carbon paste. There is also provided a sensing device for processing a signal generated by the input device, the sensing device comprising: an operational amplifier to amplify the signal; a filter to filter signal noise from the signal; an adder to apply an offset and attenuation to the signal; a microcontroller comprising an analog to digital converter to convert the signal into a digital output signal.

Abstract: A composite material for fluorescent quantum dot micro-nano packaging. The composite material comprises fluorescent quantum dots, a mesoporous particle material having a nanometer lattice structure, and a barrier layer, wherein the fluorescent quantum dots are distributed in the mesoporous particle material, and the barrier layer is coated on the outer surface of the mesoporous particle material. In the composite material according to the invention, the quantum dot aggregation can be effectively retarded, with the barrier layer coated on the surface the water-oxygen micromolecule erosion is prevented, the compatibility and stability of the composite fluorescent particles is improved, and the service life of the composite material for fluorescent quantum dot micro-nano packaging is thus greatly improved.

Abstract: An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a ? conjugated chain bonded to the linker group, and a phenyl group bonded to the ? conjugated chain opposite to the linker group and facing the second conductive layer, the ? conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the ? conjugate chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.

Abstract: Memory arrays and methods of forming the same are provided. An example memory array can include at least one plane having a plurality of memory cells arranged in a matrix and a plurality of plane selection devices. Groups of the plurality of memory cells are communicatively coupled to a respective one of a plurality of plane selection devices. A decode logic having elements is formed in a substrate material and communicatively coupled to the plurality of plane selection devices. The plurality of memory cells and the plurality of plane selection devices are not formed in the substrate material.

Abstract: Memory arrays and methods of forming the same are provided. An example memory array can include at least one plane having a plurality of memory cells arranged in a matrix and a plurality of plane selection devices. Groups of the plurality of memory cells are communicatively coupled to a respective one of a plurality of plane selection devices. A decode logic having elements is formed in a substrate material and communicatively coupled to the plurality of plane selection devices. The plurality of memory cells and the plurality of plane selection devices are not formed in the substrate material.

Abstract: The present invention is directed to a magnetic random access memory (MRAM) comprising an MRAM die having a front side that includes therein a plurality of perpendicular magnetic tunnel junction (MTJ) memory elements and a back side; and a sheet of permanent magnet disposed in close proximity to the MRAM die with a sheet surface facing the front side or back side of the MRAM die. The sheet of permanent magnet has a permanent magnetization direction substantially perpendicular to the sheet surface facing the MRAM die and exerts a magnetic field that eliminate or minimize the offset field of the magnetic free layer. The MRAM die and the sheet of permanent magnet may be encapsulated by a package case. The MRAM may further comprise a soft magnetic shield disposed on a side of the MRAM die opposite the sheet of permanent magnet.

Abstract: A memory device can include a plurality of two terminal conductive bridging random access memory (CBRAM) type memory elements; at least one program transistor configured to enable a program current to flow through at least one memory element in response to the application of a program signal at its control terminal and a program bias voltage to the memory element; and an erase load circuit that includes at least one two-terminal diode-like load element, the erase load circuit configured to enable an erase current to flow through the load element and at least one memory element in a direction opposite to that of the program current.

Abstract: Electronic devices may include a first substrate including circuitry components within the substrate, a microscale bond pad on a surface of the substrate, and a via electrically connecting the microscale bond pad to one of the circuitry components. A distance between centers of at least some adjacent circuitry components of the circuitry components may be a nanoscale distance. A second substrate may be electrically connected to the microscale bond pad. Methods of forming electronic devices may involve positioning a first substrate adjacent to a second substrate and electrically connecting the second substrate to a microscale bond pad on a surface of the first substrate. The first substrate may include circuitry components within the first substrate and a via electrically connecting the microscale bond pad to one of the circuitry components. A distance between centers of at least some adjacent circuitry components of the circuitry components may be a nanoscale distance.

Abstract: A memory includes cytokines, such as macromolecule proteins, as a poly-state data storage. Each fold state of multiple fold states of a protein are associated with a data value. Current flow through the protein is associated with a resistance of the protein associated with its current fold state. Application of light, electric fields or heat via an associated element or elements facilitates placement of a protein in a fold state that corresponds to an associated resistance and correlates with an incoming data value. Measuring of current or resistance allows for reading of a data value associated with the protein.

Abstract: A non-volatile electro-mechanical diode memory cell is described for implementation of compact (4F2) cross-point memory arrays. The electro-mechanical diode memory cells operate with relatively low set/reset voltages and excellent retention characteristics, and are multi-time programmable. Due to its simplicity, this electro-mechanical diode memory cell is attractive for implementation of three-dimensional memory arrays for higher storage density.

Abstract: Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely accepted as the building blocks of next generation VLSI circuits. A CNT crossbar based nano-architecture, includes layers of orthogonal carbon nanotubes with electrically bistable and charge holding molecules at each crossing, forming a dense array of reconfigurable double gate carbon nanotube field effect transistors (RDG-CNFETs) and programmable interconnects, which is addressed via a voltage controlled nanotube addressing circuits on the boundaries.

Abstract: Memory device constructions include a first column line extending parallel to a second column line, the first column line being above the second column line; a row line above the second column line and extending perpendicular to the first column line and the second column line; memory material disposed to be selectively and reversibly configured in one of two or more different resistive states; a first diode configured to conduct a first current between the first column line and the row line via the memory material; and a second diode configured to conduct a second current between the second column line and the row line via the memory material. In some embodiments, the first diode is a Schottky diode having a semiconductor anode and a metal cathode and the second diode is a Schottky diode having a metal anode and a semiconductor cathode.

Abstract: Apparatus, methods, and other embodiments associated with NMR fingerprinting with parallel transmission are described. One example apparatus includes individually controllable radio frequency (RF) transmission (TX) coils configured to apply varying NMR fingerprinting RF excitations to a sample. The NMR apparatus may apply excitations in parallel. An individual excitation causes different resonant species to produce different signal evolutions. The apparatus includes a parallel transmission logic that causes one of the coils to apply a first excitation to the sample and that causes a different coil to apply a second, different excitation to the sample. The excitations are configured to produce a spatial inhomogeneity between a first region in the sample and a second region in the sample that allows a resonant species to produce a first signal evolution in the first region and to produce a second signal evolution in the second region to facilitate de-correlating the signal evolutions.

Abstract: A nanoelectromechanical device is provided. The nanoelectromechanical device includes a nanotube, a first contact, and a first actuator. The nanotube includes a first end, the first end supported by a first structure, a second end opposite the first end, and a first portion. The first actuator is configured to apply a first force to the nanotube, the first force causing the nanotube to buckle such that the first portion couples to the first contact.

Abstract: Providing for a field programmable gate array (FPGA) utilizing resistive random access memory (RRAM) technology is described herein. By way of example, the FPGA can comprise a switching block interconnect having parallel signal input lines crossed by perpendicular signal output lines. RRAM memory cells can be formed at respective intersections of the signal input lines and signal output lines. The RRAM memory cell can include a voltage divider comprising multiple programmable resistive elements arranged electrically in series across a VCC and VSS of the FPGA. A common node of the voltage divider drives a gate of a pass gate transistor configured to activate or deactivate the intersection. The disclosed RRAM memory can provide high transistor density, high logic utilization, fast programming speed, radiation immunity, fast power up and significant benefits for FPGA technology.

Abstract: In one embodiment, a non-volatile memory bitcell includes a program electrode, an erase electrode, a cantilever electrode connected to a bi-stable cantilever positioned between the program electrode and the erase electrode, and switching means connected to the program electrode arranged to apply a voltage potential onto the program electrode, or to detect or to prevent the flow of current from the cantilever to the program electrode. The switching means may comprise a switch having a first node, a second node, and a control node, wherein voltage is applied to the control node to activate the switch to provide a connection between the first node and the second node. The switching means may comprise a pass-gate. The switching means may comprise an NMOS transistor. The switching means may comprise a PMOS transistor. The switching means may comprise a MEMS switch.

Abstract: An organic compound has the following chemical structure: wherein R is different from R*; R and R* are independently hydrogen, halogen, nitro or methoxyl; and R1 is a C1-C6 alkyl or a phenyl group. A quaternary data storage device includes a bottom electrode, a top electrode, and the organic film layer sandwiched between the bottom electrode and the top electrode.

Abstract: A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting units, which are connected to the variable resistors, shift resistance distribution in the set and reset state of the variable resistors by a predetermined level.

Abstract: A molecular memory device has an insulating film with a cavity, the cavity having an upper portion and a lower portion; a first conductive member with a portion exposed at the lower portion of the cavity; a second conductive member with a portion exposed at the upper portion of the cavity; and a resistance varying-type molecular chain disposed in the cavity and bonded with the first conductive member or the second conductive member. The cavity is wider than at least one of the first conductive member along a first direction and the second conductive member along a second direction.

Abstract: A nonvolatile memory system is described with novel architecture coupling nonvolatile storage memory with random access volatile memory. New commands are included to enhance the read and write performance of the memory system.

Abstract: A solid-state, multi-valued, molecular random access memory (RAM) device, comprising an electrically, optically and/or magnetically addressable unit, a memory reader, and a memory writer. The addressable unit comprises a conductive substrate; one or more layers of electrochromic, magnetic, redox-active, and/or photochromic materials deposited on the conductive substrate; and a conductive top layer deposited on top the one or more layers. The memory writer applies a plurality of predetermined values of potential biases or optical signals or magnetic fields to the unit, wherein each predetermined value applied results in a uniquely distinguishable optical, magnetic and/or electrical state of the unit, thus corresponding to a unique logical value. The memory reader reads the optical, magnetic and/or electrical state of the unit.

Abstract: Hydro-carbon nanorings may be used in storage. Sufficiently cooled, an externally hydrogen doped carbon nanoring may be used to create a radial dipole field to contain streams of electrons. Similarly, an internally hydrogen doped carbon nanoring may be used to create a radial dipole field to contain streams of positrons. When matched streams of positrons and electrons are sufficiently compressed they may form Cooper pairs with magnetic moments aligned to the movement of the stream. Matched adjacent Cooper pairs of electrons and positrons may contain information within their magnetic moments, and as such, may transmit and store information with little or no energy loss. Information may be similarly encoded in magnetic moments of spins of pairs of positrons and electrons, not in the form of Cooper pairs.

Abstract: A computer-implemented method and system for generating large families of sequences with desirable properties for many applications, including communications and radar applications, applies constraints to a sequence in the Zak space, modulates the constrained sequence in the Zak space, and determines permutations of the modulated sequence in the Zak space. The constraints are associated with predetermined properties, including predetermined autocorrelation and cross-correlation properties. Other embodiments of the computer-implemented method and system transform an input sequence into a transformed sequence using the finite Zak transform and determine at least one other different sequence based on the transformed sequence. The at least one other different sequence can be determined by collecting a plurality of sequences that are finitely supported on an algebraic line in the Zak space and modulating and/or determining permutations of some or all of the sequences.

Abstract: Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.