Abstract: A scheme for securing a memory subsystem or stack is disclosed. A first memory device performs an authentication on a received operation. If the authentication is valid, a write protect signal to a second memory device is disabled, allowing write or erase operations to be performed on the second memory device.

Abstract: A semiconductor integrated circuit device is provided on a semiconductor substrate, and includes a plurality of word lines, a plurality of data lines, and a plurality of electrically programmable and erasable non-volatile memory cells respectively coupled to the plurality of word lines and to the plurality of data lines. The erasable non-volatile memory cell each includes a MIS transistor having a floating gate having a first level polycrystalline silicon layer, a source, and a drain coupled to the corresponding data line, and a control gate formed of a semiconductor region in the semiconductor substrate, the control gate being coupled to the corresponding word line.

Abstract: A method and an apparatus for collecting data related to a status of an electrical power system, wherein data is continuously acquired from the electrical power system and is stored, at least temporarily, in a first volatile memory. Upon the occurrence of an event, the data stored in the first volatile memory is copied and permanently stored in a second non-volatile memory.

Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.

Abstract: In one aspect, a non-volatile memory includes a phase-change memory cell array which includes a plurality of normal phase-change memory cells and a plurality of pseudo one-time-programmable (OTP) phase-change memory cells, a write driver which writes data into the normal and pseudo OTP phase-change memory cells of the phase-change memory cell array, and an OTP controller which selectively disables the write driver.

Abstract: An SRAM bus architecture includes pass-through interconnect conductors. Each of the pass-through interconnect conductors is connected to routing channels of the general interconnect architecture of the FPGA through an element which includes a pass transistor connected in parallel with a tri-state buffer. The pass transistors and tri-state buffers are controlled by configuration SRAM bits. Some of the pass-through interconnect conductors are connected by programmable elements to the address, data and control signal lines of the SRAM blocks, while other pass through the SRAM blocks with out being further connected to the SRAM bussing architecture.

Abstract: A method protects against a global data erasure an integrated circuit comprising an electrically programmable data memory and a control unit to execute commands for reading or writing in the memory. The method includes the steps of providing, in the integrated circuit, electrically programmable reference memory cells, at putting the integrated circuit into service, storing, in the reference memory cells, bits of determined value forming an authorized combination of bits and, during the operation of the integrated circuit following its putting into service, reading and evaluating the reference memory cells and blocking the integrated circuit if the reference memory cells contain a forbidden combination of bits different from the authorized combination.

Abstract: A storage system that comprises multiple solid-state storage devices includes a command set that enables a host system to initiate one or more types of purge operations. The supported purge operations may include an erase operation in which the storage devices are erased, a sanitization operation in which a pattern is written to the storage devices, and/or a destroy operation in which the storage devices are physically damaged via application of a high voltage. The command set preferably enables the host system to specify how many of the storage devices are to be purged at a time during a purge operation. The host system can thereby control the amount of time, and the current level, needed to complete the purge operation. In some embodiments, the number of storage devices that are purged at a time may additionally or alternatively be selectable by a controller of the storage system.

Abstract: A semiconductor integrated circuit device is provided on a semiconductor substrate, and includes a plurality of word lines, a plurality of data lines, and a plurality of electrically programmable and erasable non-volatile memory cells respectively coupled to the plurality of word lines and to the plurality of data lines. The erasable non-volatile memory cell each includes a MIS transistor having a floating gate having a first level polycrystalline silicon layer, a source, and a drain coupled to the corresponding data line, and a control gate formed of a semiconductor region in the semiconductor substrate, the control gate being coupled to the corresponding word line.

Abstract: Receiving a request for canceling setting, a control circuit erases data stored in a corresponding block, changes a value of a protection flag, and cancels protection setting. When an overall protection is set for any block, the control circuit prohibits access to all blocks, except when it is an operation mode for activating a memory program contained in the microcomputer. Further, control circuit permits an access to a block M only when partial protection is set, CPU is in the mode for activating a memory program contained in the microcomputer and the access is for reading an instruction code in accordance with an instruction fetch.

Abstract: A nonvolatile semiconductor memory device includes a memory cell array constituted by a plurality of memory blocks, an interface, a write circuit, and a read circuit. A protect flag is written in the memory block. The readout protect flag can be output to an external device through the interface. When a write command is input from the interface, the write circuit executes the write command when the protect flag in the selected memory block has a first value and does not execute the write command when the protect flag has a second value.

Abstract: An apparatus, system, method, and article for protecting nonvolatile memory from viruses are described. The apparatus may include a nonvolatile memory comprising one or more protected storage areas. The nonvolatile memory may be arranged to transform buffered information to be programmed in the protected areas and to program transformed information in the protected storage areas. Other embodiments are described and claimed.

Abstract: A flash memory device and a related method of write protecting data are disclosed. The flash memory device includes a protection controller having a latch circuit storing temporary protected/accessible data, a cell array storing persistent protected/accessible data, a write controller altering the persistent protected/accessible data, and a latch controller altering the temporary protected/accessible data.

Abstract: One or more lock words in a non-volatile memory with write ability correspond to lockable features of a protected system including the memory. A lockable feature should be locked when the corresponding lock word has a value equal to one of a limited number of predetermined locking combination(s). The locking combination(s) are selected so as to minimize the probability of the lock word waking up from manufacture with a value equal to one of the locking combination(s). In order to detect whether allowable usage of a lockable feature should be at a predetermined locked or unlocked level, multi-sampling of the corresponding lock word value is performed. If there is variation among the sampled values of the lock word, a malicious attack is identified. In one preferred embodiment, the multi-sampling occurs upon power up reset of the protected system and if a malicious attack is identified, the protected system is kept in reset.

Abstract: A memory cell includes a master cell storing first true/complement data and a slave cell storing second true/complement data. A first circuit associated with the slave cell is operable responsive to a first clock signal to copy first true/complement data from the master cell into the slave cell with same state to be the second true/complement data. A second circuit associated with the master cell is operable response to a second clock signal, which is a non-overlapping complement of the first clock signal, to copy second true/complement data from the slave cell into the master cell with complementary state to be the first true/complement data. A read/write circuit includes circuitry for supporting true/complement data read and write operations with respect to the master cell in either same polarity or opposite polarity state.

Abstract: A technique for securing a flash memory block in a secure device system involves cryptographic techniques including the generation of a Message Authentication Code (MAC). The MAC may be generated each time a file is saved to one or more data blocks of a flash memory device and stored with the file's metadata and to each of the data blocks. A technique for reading and storing versioned files may be employed when applications utilize versioning.

Abstract: An improved flash EEPROM memory-based storage subsystem includes one or more flash memory arrays, each with three data registers and a controller circuit. During a flash program operation, one data register is used to control the program operation, a second register is used to hold the target data value, and a third register is used to load the next sector's data. Subsequent to a flash program operation, a sector's data are read from a flash array into the first data register and compared to the target data stored in the second register. When the data is verified good, the data from the third register is copied into the first and second registers for the next program operation. This creates an improved performance system that doesn't suffer data transfer latency during program operations that require data verification after the program operation is complete. Alternate embodiments perform the comparison using two register implementations and a single register implementations.

Abstract: A nonvolatile semiconductor memory device includes a memory cell array constituted by a plurality of memory blocks, an interface, a write circuit, and a read circuit. A protect flag is written in the memory block. The readout protect flag can be output to an external device through the interface. When a write command is input from the interface, the write circuit executes the write command when the protect flag in the selected memory block has a first value and does not execute the write command when the protect flag has a second value.

Abstract: The embodiments of the invention provide an apparatus, method, etc. for a non volatile memory RAD-hard (NVM-rh) system. More specifically, an IC permanent non-volatile storage element comprises an integrated semiconductor stable reference component, wherein the component is resistant to external radiation. The storage element further comprises e-fuse structures in the component and a sensing circuit coupled to the e-fuse structures. The sensing circuit is adapted to update an external device at a specified time interval to reduce incidence of soft errors and errors due to power failure. Moreover, the sensing circuit is adapted to cease updating the external device to program the e-fuse structures; and, continue updating the external device after programming the e-fuse structures.

Abstract: In a nonvolatile semiconductor memory device according to the present invention, a password protection function is enabled or disabled based on a first specified value M and a second state specified value P such that when both of the first specified value M and the second state specified value P are in a set state, the password protection function is enabled and when at least the second specified value P is in a reset state, the password protection function is disabled, and the first state specified value M maintains a previous state and the second state specified value P follows the state of the first state specified value M in response to a reset operation, and the cancel operation to shift the second state specified value P to the reset state can be performed only when the password is inputted correctly.

Abstract: The multi-context memory cell comprises a first memory means for storing an item of data information and also a plurality of second memory means, it being possible for the data information stored in the first memory means to be saved in each second memory means. Moreover, the memory cell comprises a means for saving the data information stored in the first memory means into one of the second memory means, and also a means for storing the digital data information stored in a selected second memory means into the first memory means.

Abstract: A memory device and method thereof are provided. The example memory device may include a first buffer receiving most significant bit (MSB) data and least significant bit (LSB) data to be stored within a memory cell, a second buffer loading stored LSB data stored from the memory cell and a data loader generating at least one load signal based upon logic levels of the received MSB data from the first buffer and the loaded LSB data from the memory cell, the at least one load signal controlling programming permissions for the memory cell. The example method may include receiving LSB data, storing the received LSB data within a memory cell, receiving MSB data, loading the LSB data from the programmed memory cell, generating at least one load signal based upon logic levels of the received MSB data and the loaded LSB data, the at least one load signal controlling programming permissions for the memory cell and storing the MSB data within the memory cell based on the at least one load signal.

Abstract: A flash memory device includes: a memory cell array including pluralities of blocks; a block status storage unit including pluralities of latch cells arranged in rows and columns to store block status information signals corresponding to each of the blocks and providing the block status information signals in response to each of the write and read addresses; and a controller regulating an access to the memory cell array in response to the block status information signals. The block status storage unit provides information about whether a read address input during a read-while-write operation or suspend read operation is valid, and offers information about whether a current block is a write block or a write protection block.

Abstract: A nonvolatile latch includes a memory element for storing an input data value. A write protect element is coupled to the memory element for utilizing a write protect signal to ensure the input data value stored by the memory element remains during a loss of a supply voltage to the latch.

Abstract: A semiconductor non-volatile memory device, particularly a flash memory array, having a chip configuration with a plurality of pins including a write protect pin, a serial in pin and an optional parallel data bus with input-output pins (I/O7-0), plus other pins, all electrically communicating with the memory array and particularly a sector protection register of variable size and location. The sector protection register defines which sectors or group of sub-sectors to protect and is controlled by the use of commands via the serial in pin or the optional input-output pins. The sector protection may be selectably controlled by either use of a signal to the write protect pin or use of commands via the serial in pin or the optional input-output pins to the command and control logic. A logic circuit instantly determines whether the write protect pin or the commands are controlling the sector protection.

Abstract: Securing an integrated circuit, including fabricating the integrated circuit so that the integrated circuit includes at least one efuse that is intended to be always blown during operation of the integrated circuit and the integrated circuit includes security circuitry capable of blowing the efuse and of performing other security related functions; blowing, by the security circuitry of the integrated circuit, the efuse when power is applied to the integrated circuit and prior to performing any other security related functions; and setting, by the security circuitry after blowing the efuse, a security state of the integrated circuit in dependence upon a sensed state of the efuse.

Abstract: A method for performing multi-programmable function with one-time programmable (OTP) memories includes: generating a newest word in a OTP memory array; receive a word-to-be-record; comparing the newest word and the word-to-be-record; and according to a result, recording bit information between the newest word and the word-to-be-record into the OTP memory array. Therefore the method and apparatus can simplify hardware circuit and reduce production costs of additional memory units, furthermore the memory count is not limited to only OTP memory block count.

Abstract: The non-volatile semiconductor storage device 101 includes the specific command Enable/Disable signal lines 120 connected to the command decoder 108. The specific command Enable/Disable signals are externally inputted to the command decoder 108 through the signal lines 120. Thereby, when the device 101 is initialized, the command decoder 108 enables the specific command and the device 101 can shift to a mode corresponding to the specific command. On the other hand, the command decoder 108 can disable the specific command, for example, when a user uses the device 101, thereby preventing the specific command from being executed even when the specific command is erroneously issued.

Abstract: An electroless plating apparatus is provided. The electroless plating apparatus includes a wafer holder; a chemical dispensing nozzle over the wafer holder; a conduit connected to the chemical dispensing nozzle; and a radiation source over the wafer holder.

Abstract: The semiconductor device includes a memory cell array that includes memory cells for storing data and is managed on a sector basis, a memory that stores the information determining the activation status, a latch circuit that latches the activation information according to the information stored in the memory, and a circuit that latches the activation information according to the information stored in the memory in the latch circuit. The activation information according to the memory state of the memory is latched at the time of inputting a given command after activation, and it is thus possible to read the information stored in the memory and set the information in the latch circuit certainly.

Abstract: A semiconductor memory device includes a nonvolatile memory which stores protect information, a controller which includes a system buffer and controls a physical state of the nonvolatile memory, a battery which drives the nonvolatile memory and the controller, first transmission/reception means capable of transmitting data in the nonvolatile memory to an outside and receiving data which is transmitted from the outside, and second transmission/reception means capable of transmitting data in the nonvolatile memory to an outside and receiving data which is transmitted from the outside.

Abstract: The present invention provides a nonvolatile memory card in which a program is added, modified, changed, or the like by selecting arbitrary firmware on a flash memory from a plurality of pieces of firmware on flash memories. In a memory card, in addition to a program stored in a built-in ROM, firmware on flash memories as programs for adding, changing, modifying, or the like of a function such as a patch program are stored. Firmware on a flash memory which is desired to be made valid is set in a parameter sector or the like and is loaded into an external RAM, and the CPU of a control logic executes a process.

Abstract: A memory cell array has a first and a second storage area. The first storage area has a memory elements selected by an address signal. The second storage area has a memory elements selected by a control signal. A control circuit has a fuse element. When the fuse element has been blown, the control circuit inhibits at least one of writing and erasing from being done on the second storage area.

Abstract: A semiconductor integrated circuit device is provided on a semiconductor substrate, and includes a plurality of word lines, a plurality of data lines, and a plurality of electrically programmable and erasable non-volatile memory cells respectively coupled to the plurality of word lines and to the plurality of data lines. The erasable non-volatile memory cell each includes a MIS transistor having a floating gate having a first level polycrystalline silicon layer, a source, and a drain coupled to the corresponding data line, and a control gate formed of a semiconductor region in the semiconductor substrate, the control gate being coupled to the corresponding word line.

Abstract: A semiconductor device includes: groups of memory cells that are connected to word lines; and select gates that are controlled by control word lines and are connected to the groups of memory cells, each of the select gates being capable of storing protection information for a respective one of the groups of memory cells.

Abstract: A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arranged between the source and drain for storing electrical charge generated in the body. The magnitude of the net electrical charge in the body can be adjusted by input signals applied to the transistor, and the adjustment of the net electrical charge by the input signals can be at least partially cancelled by applying electrical voltage signals between the gate and the drain and between the source and the drain.

Abstract: A semiconductor memory device includes a memory cell array, a decoder, and an access control unit. The decoder generates a word line voltage according to an address for a plurality of memory cells in the memory cell array. The access control unit controls access to the plurality of memory cells according to the word line voltage and additional access information separate from the address.

Abstract: The present invention provides a method for accessing a memory. The memory contains M one-time programmable memory blocks, and each has a first memory sector and a second memory sector. The method includes: selecting a first target memory block and reading the first target memory block. The step of selecting a first target memory block is performed by comparing the second memory sectors of N one-time programmable memory blocks from M one-time programmable memory blocks by following a search rule to select the first target memory block.

Abstract: A memory purge system destructively purges the memory circuits of a memory device. The system includes a power supply for supplying a selectable voltage and current. Switching circuits electrically connect the power supply to the memory circuits of the memory device. A controller selects a voltage and current supplied by the power supply and activates the switching circuit to apply the voltage and current to the memory circuits. The controller determines whether the memory circuits have been destroyed by monitoring current flow into the memory circuits.

Abstract: A method capable of improving endurance of memory includes detecting whether a record cell is the last non-programmed record cell of a set of record cells that includes the record cell. The method includes erasing the corresponding set of multi-time programmable memory blocks and erasing the set of record cells, if the record cell is the last non-programmed record cell of the set of record cells that includes the record cell. The method further includes programming the record cell corresponding to a first non-programmed record cell in the set of record cells if the non-programmed record cell is not the last non-programmed record cell of the set of record cells.

Abstract: A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arranged between the source and drain for storing electrical charge generated in the body. The magnitude of the net electrical charge in the body can be adjusted by input signals applied to the transistor, and the adjustment of the net electrical charge by the input signals can be at least partially cancelled by applying electrical voltage signals between the gate and the drain and between the source and the drain.

Abstract: A data write apparatus for nonvolatile memory includes a control device for transmitting or receiving data, and a nonvolatile memory connected to the control device through a communication line, for storing the data supplied from the control device. The nonvolatile memory permits write of data if the number of pulses of a clock signal transmitted as well as the data agrees with a prescribed number and the nonvolatile memory inhibits write of data if the number of pulses of the clock signal does not agree with the prescribed number of pulses. The control device includes a receiving member for receiving the data transmitted onto the communication line; and an increasing/decreasing member for comparing a first data supplied to the nonvolatile and a second data received by the receiving member through the communication line to determine whether or not the first data and the second data are the same data.

Abstract: A memory system is constituted of a file storage flash memory storing a control program required for a control portion and a large amount of data, and a random access memory storing a program used by the control portion and functioning as a buffer memory for received data. Thus, a memory system for a portable telephone capable of storing a large amount of received data at high-speed and allowing reading of the stored data at high-speed is provided.

Abstract: A semiconductor device includes a first memory cell array that includes memory cells for storing data and is managed on a sector basis, a second memory cell array including memory cells storing sector protection information on the sector basis, and a control circuit checking the sector protection information stored in the second memory cell array whenever the sector to be programmed or erased is selected. Thus, the sector protection information in all the sectors does not have to be latched at the time of power on. The latch circuit equal in number to the sector does not have to be provided. It is thus possible to reduce the number of the circuits drastically and the chip area can be reduced.

Abstract: An erroneous operation preventing circuit of an electrically rewritable non-volatile memory device is for setting one or more operational modes of a plurality of operational modes including at least a first reading mode of reading out data from a memory array 4, a programming mode, an erasing mode and a second reading mode of reading out data not stored in the memory array 4, in accordance with an input control command, and for performing a predetermined process in the set operational modes. The erroneous operation preventing circuit comprises an operational mode enforcing circuit 2a for setting the first reading mode regardless of the input of the control command, in a data protection status where the programming mode and the erasing mode are inhibited from being set in accordance with a control signal for protecting predetermined data.

Abstract: A memory purge system destructively purges the memory circuits of a memory device. The system includes a power supply for supplying a selectable voltage and current. Switching circuits electrically connect the power supply to the memory circuits of the memory device. A controller selects a voltage and current supplied by the power supply and activates the switching circuit to apply the voltage and current to the memory circuits. The controller determines whether the memory circuits have been destroyed by monitoring current flow into the memory circuits.

Abstract: On-the-fly reconfiguration of a secured CPLD. In one embodiment, a CPLD includes a novel security circuit that provides two different security control signals: an EEPROM/SRAM security signal and an EEPROM security override signal. The EEPROM/SRAM security signal prevents reading from both the EEPROM and the SRAM, and also prevents writing to the EEPROM. The EEPROM security override signal enables reading and writing for the EEPROM even when otherwise disabled by the EEPROM/SRAM security signal, but is active only when a specific set of conditions are met. These conditions can include, for example, the application of a sufficiently long erase pulse to the EEPROM array. Thus, the security on the EEPROM array is overridden only after the configuration data set stored in the EEPROM array has been erased. Reading from the SRAM is not enabled by the EEPROM security override signal. Therefore, the configuration data set is not compromised.

Abstract: A data processor includes an authentication circuit for judging access right. The data processor further includes a nonvolatile memory cell array formed on an insulator film of a chip, and a conductor layer provided between a logic circuit of the authentication circuit and the nonvolatile memory cell array. The nonvolatile memory cell array can store at least part of authentication information or an authentication program.

Abstract: An improved flash EEPROM memory-based storage subsystem includes one or more flash memory arrays, each with three data registers and a controller circuit. During a flash program operation, one data register is used to control the program operation, a second register is used to hold the target data value, and a third register is used to load the next sector's data. Subsequent to a flash program operation, a sector's data are read from a flash array into the first data register and compared to the target data stored in the second register. When the data is verified good, the data from the third register is copied into the first and second registers for the next program operation. This creates an improved performance system that doesn't suffer data transfer latency during program operations that require data verification after the program operation is complete. Alternate embodiments perform the comparison using two register implementations and a single register implementations.

Abstract: A secure memory device that is configured to prevent unauthorized access of data is disclosed. More specifically, a kill function logic device is capable of initiating security measures upon the occurrence of some event. The security measures may include disabling read access to the memory device, accelerated erasing of the memory device, or disabling of the memory device itself. Alternatively, a circuit may be configured to purge data stored in the memory device in an accelerated fashion.