Abstract: Preamble release training in a double data-rate dynamic random access memory interface uses feedback from read operations to adjust the preamble release signal so that the preamble release signal continues to be activated close to the middle of the preamble. A first signal, and then a second signal, are generated in response to an initiation of a read operation. The first and second signals are characterized by a delay from the initiation of the read operation of one or more clock cycles plus a fine delay contributed by an adjustable delay circuit. The first signal is provided to a data strobe parking circuit that uses it to release or un-park the data strobe signal lines. The second signal is phase-compared with the data strobe signal associated with incoming data during the read operation. The adjustable delay circuit is adjusted in response to the result of the comparison.

Abstract: A memory device includes a decoder circuit configured to activate a setting signal and a write signal if a setting command is applied when a reference mode is set; a delay circuit configured to delay and to generate a delayed write signal; and a setting circuit configured to perform a setting operation in response to the delayed write signal and an input signal of a predetermined pad at the time of setting of the reference mode and to perform the setting operation in response to the setting signal when the reference mode is not set.

Abstract: A semiconductor memory device includes an internal signal generation block configured to generate a control signal which is enabled from a generation time of an internal active signal enabled if it is determined that a combination of external commands in synchronization with a rising edge of an external clock inputted from an outside is a preset combination, to a disable time an internal idle signal; and an internal command signal generation block configured to generate an internal write signal if it is determined that a combination of counting signals counted during an enable period of the control signal is a first combination and generate an internal precharge signal if it is determined that the combination of the counting signals is a second combination.

Abstract: Memory access alignment in a double data rate (‘DDR’) system, including: executing, by a memory controller, one or more write operations to a predetermined address of a DDR memory module, including sending to the DDR memory module a predetermined amount of data of a predetermined pattern along with a data strobe signal; executing, by the memory controller, a plurality of read operations from the predetermined address of the DDR memory module, including capturing data transmitted from the DDR memory module; and determining, by the memory controller, a read adjust value and a write adjust value in dependence upon the data captured in response to the read operations.

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

Abstract: The semiconductor device includes a pre-signal generator and a data output portion. The pre-signal generator generates a pre-input control signal and a pre-output control signal. The pre-signal generator also generates a pre-latch pulse signal by detecting when the pre-input control signal and the pre-output control signal are generated. The data output portion receives an input control signal, a latch pulse signal, and a first output control signal. The data output portion receives an input clock signal in response to the input control signal and the latch pulse signal to generate a shift clock signal, and the data output portion also shifts the first output control signal in response to the shift clock signal to generate a second output control signal.

Abstract: An integrated circuit may include memory interface circuitry for communicating with off-chip memory. The memory interface circuitry may receive data signals and data strobe signals from different memory devices via respective data ports and data strobe ports. The memory interface circuitry may be operable in at least first and second modes. In the first mode, data signals from each memory device may be received at two respective data ports while the data strobe signal from one memory device is used to clock the data signals at two corresponding read capture registers. In the second mode, data signals from first and second memory devices may be received via first and second data ports, respectively. The data strobe signal from the first memory device may be ignored while the data strobe signal from the second memory device is used to clock the data signals at two corresponding read capture registers.

Abstract: Disclosed are various embodiments related to stacked memory devices, such as DRAMs, SRAMs, EEPROMs, ReRAMs, and CAMs. For example, stack position identifiers (SPIDs) are assigned or otherwise determined, and are used by each memory device to make a number of adjustments. In one embodiment, a self-refresh rate of a DRAM is adjusted based on the SPID of that device. In another embodiment, a latency of a DRAM or SRAM is adjusted based on the SPID. In another embodiment, internal regulation signals are shared with other devices via TSVs. In another embodiment, adjustments to internally regulated signals are made based on the SPID of a particular device. In another embodiment, serially connected signals can be controlled based on a chip SPID (e.g., an even or odd stack position), and whether the signal is an upstream or a downstream type of signal.

Abstract: Techniques are disclosed relating to determining when a data strobe signal is valid for capturing data. In one embodiment, an apparatus is disclosed that includes a memory interface circuit configured to determine an initial time value for capturing data from a memory based on a data strobe signal. In some embodiments, the memory interface circuit may determine this initial time value by reading a known value from memory. In one embodiment, the memory interface circuit further configured to determine an adjusted time value for capturing the data, where the memory interface circuit is configured to determine the adjusted time value by using the initial time value to sample the data strobe signal.

Abstract: A semiconductor apparatus includes: a command control unit configured to generate a read strobe signal, a write strobe signal, a read command, and a write command; a clock enable signal generation unit configured to generate a read clock enable signal in response to the read strobe signal and generate a write clock enable signal in response to the write strobe signal; a clock control unit configured to generate a first control clock signal and a second control clock signal in response to an internal clock signal, the read clock enable signal, and the write clock enable signal; and a latency shift unit configured to generate a first latency signal in response to a delayed read command and the first control clock signal and generate a second latency signal in response to a delayed write command and the second control clock signal.

Abstract: A semiconductor device includes: two level shift circuits having substantially the same circuit configuration; an input circuit that supplies complementary input signals to the level shift circuits, respectively; and an output circuit that converts complementary output signals output from the level shift circuits into in-phase signals and then short-circuits the in-phase signals. According to the present invention, the two level shift circuits having substantially the same circuit configuration are used, and the complementary output signals output from the level shift circuits are converted into in-phase signals before short-circuited. This avoids almost any occurrence of a through current due to a difference in operating speed between the level shift circuits.

Abstract: During a command/address calibration mode, a memory controller may transmit multiple cycles of test patterns as signals to a memory device. Each cycle of test pattern signals may be transmitted at an adjusted relative phase with respect to a clock also transmitted to the memory device. The memory device may input the test pattern signals at a timing determined by the clock, such as rising and/or falling edges of the clock. The test pattern as input by the memory device may be sent to the memory controller to determine if the test pattern was successfully transmitted to the memory device during the cycle. Multiple cycles of test pattern transmissions are evaluated to determine a relative phase of command/address signals with respect to the clock for transmission during operation of the system.

Abstract: A memory device has multiple bi-directional data paths. One of the multiple bi-directional data paths is configured to transfer data at one speed. Another one of the multiple bi-directional data paths is configured to transfer data at another speed.

Abstract: The first input circuit detects an input signal to output a first output signal having the same phase as the input signal. The second input circuit is configured to detect a first strobe signal to output a second output signal. The third input circuit is configured to detect a second strobe signal as a reversed signal of the first strobe signal to output a third output signal. A data latch circuit includes a first latch circuit and a second latch circuit. It is configured to latch the first output signal in either one of the first latch circuit or the second latch circuit according to the first output signal, the second output signal and the third output signal. It also allows the other one of the first latch circuit or the second latch circuit to input the first output signal thereto.

Abstract: A semiconductor memory device includes a data transmission unit configured to transmit first input data to only a first global line driver or to the first global line driver and a second global line driver in response to a test signal, and a transmission element configured to transmit second input data only to the second global line driver in response to the test signal.

Abstract: A system, includes a controller comprising a plurality of first external terminals configured to supply a command and an address, and communicate a data, and communicate a strobe signal related to the data; and a semiconductor memory device including a plurality of second external terminals corresponding to the plurality of first external terminals, at least one of the plurality of first external terminals and at least one of the plurality of second external terminals each being capable of supplying an information specifying a length of a preamble of the strobe signal before the semiconductor memory device communicates the data between the controller and the semiconductor memory device, the semiconductor memory device further including a preamble register configured to be capable of storing the information.

Abstract: A memory controller and a method of calibrating the memory controller are provided. Input circuitry in the memory controller receives a differential pair of data strobe signals from a memory and generates a logical data strobe signal in dependence on a voltage difference between the differential pair of data strobe signals. Hysteresis circuitry, when active, increases by a predetermined offset a threshold voltage difference at which the input circuitry changes a logical state of the logical data strobe signal. Gate signal generation circuitry generates a data strobe gating signal, wherein the memory controller interprets the logical data strobe signal as valid when the data strobe gating signal is asserted.

Abstract: A memory controller transmits a data signal, a data strobe signal and a mask signal to a memory, wherein each transition of the data strobe signal indicates a sample point for the data signal and the mask signal indicates a validity of the data signal. A mask signal training procedure is carried out comprising three steps. Writing first and second values to the memory for a predetermined plurality of transitions of the data strobe signal with the mask signal set to indicate that the first data signal is valid and the second data signal is valid except for a selected transition of the predetermined plurality. Reading from the memory for the predetermined plurality of transitions of the data strobe signal. Determining a timing offset for the mask signal for which the value read at the selected transition matches the first value.

Abstract: A domain crossing circuit of a semiconductor apparatus includes a delay-locked loop block configured to generate a delay-locked loop clock signal in response to a clock signal and a clock enable signal; a clock enable block configured to generate the clock enable signal in response to the clock signal and a read command signal; and a command pass block configured to perform primary latency control according to the clock signal and secondary latency control according to the delay-locked loop clock signal, for the read command signal generated in response to a strobe signal, and generate a latency signal.

Abstract: A delay circuit of the present disclosure includes a first delay unit and a second delay unit which are connected in series and delay an input signal to generate a delayed signal. The first delay unit includes a first signaling pathway, and changes, based on a first delay control value, a first amount of delay to be provided to the input signal by switching signaling pathways for transmitting the input signal that are within the first pathway. The second delay unit includes a second signaling pathway, and changes, based on a second delay control value, a second amount of delay to be provided to the input signal without switching the second signaling pathway for transmitting the input signal.

Abstract: A controller, includes a plurality of external terminals configured to supply a command and an address to a semiconductor memory device, communicate a data with the semiconductor memory device, and communicate a strobe signal related to the data, at least one external terminal among the plurality of external terminals being configured to be capable of supplying an information specifying a length of a preamble of the strobe signal before the semiconductor memory device communicates the data.

Abstract: A method for calibrating a DDR memory controller is described. The method provides an optimum delay for a core clock delay element to produce an optimum capture clock signal. The method issues a sequence of read commands so that a delayed version of a dqs signal toggles continuously. The method delays a core clock signal to sample the delayed dqs signal at different delay increments until a 1 to 0 transition is detected on the delayed dqs signal. This core clock delay is recorded as “A.” The method delays the core clock signal to sample the core clock signal at different delay increments until a 0 to 1 transition is detected on the core clock signal. This core clock delay is recorded as “B.” The optimum delay value is computed from the A and B delay values.

Abstract: An operating method of a delay locked loop (DLL) circuit for a semiconductor memory device is disclosed. The DLL circuit may include a plurality of sub-circuits. The method may include calculating an additive latency value based on predetermined parameters, and controlling a set of the plurality of sub-circuits of the DLL circuit to be maintained in a turn-off state based on the calculated additive latency value, during a period of time after the semiconductor device receives an operation command in a power saving mode.

Abstract: In one aspect, a method includes receiving a differential strobe signal including first and second components; buffering, by a first buffer, both the first and second components; and buffering, by a second buffer, the first component. The method includes receiving, by a control logic block, the output of the second buffer. The method includes, after a period when the values of both the first and second components are at a first logic state, but before receiving a burst of clock edges in the differential strobe signal, detecting a transition in the first component from the first logic state to a second logic state, and in response to the detected transition, asserting an enable signal. The method further includes receiving, by a gating logic block, the enable signal and the output of the first buffer, and, when the enable signal is asserted, un-gating the output of the first buffer.

Abstract: Apparatuses and methods are disclosed, including an apparatus with a first differential amplifier to amplify an input signal into a first output signal, a second differential amplifier to amplify the input signal into a second output signal that is complementary to the first output signal, and a feedback resistance coupled between the first output signal and the second output signal. Additional apparatuses and methods are described.

Abstract: A synchronous semiconductor memory device includes a first delay locked loop circuit and a second delay locked loop circuit. The first delay locked loop circuit has a first delay line and generates a first clock hat is delay-synchronized with a clock applied as a signal for a data output timing control. The second delay locked loop circuit has a second delay line and generates a second clock that is delay-synchronized with the clock. The first delay locked loop circuit consumes less power than the second delay locked loop circuit, and the second delay locked loop circuit has less jitter than the first delay locked loop circuit. The first and second delay locked loop circuits operate at different logic levels for a delay synchronization operation.

Abstract: An integrated circuit includes an input pad configured to receive a low-speed signal and a high-speed signal, a high-speed buffer coupled to the input pad, a low-speed buffer coupled to the input pad, a strobe input unit configured to receive a strobe signal for indicating an input of the high-speed signal to the input pad, and a buffer control unit configured to control an activation of the high-speed buffer in response to the strobe signal.

Abstract: An integrated circuit (IC) memory controller is disclosed. The memory controller includes a receiver to receive a strobe signal and provide an internal strobe signal. An adjustable delay circuit delays an enable signal to generate a delayed enable signal. A gate circuit generates a gated strobe signal using the delayed enable signal that masks transitions of the internal strobe signal that occur prior to a valid region of the internal strobe signal. A sample circuit samples data using the gated strobe signal.

Abstract: The disclosed embodiments relate to components of a memory system that support frequency-agile strobe enable window generation during read accesses. In specific embodiments, this memory system contains a memory controller which includes a timing circuit to synchronize a timing-enable signal with a timing signal returned from a read path, wherein the timing signal includes a delay from the read path. In some embodiments, the timing circuit further comprises two calibration loops. The first calibration loop tracks the timing-enable signal with respect to a cycle-dependent delay in the delay, wherein the cycle-dependent delay depends on a frequency of the strobe signal. The second calibration loop tracks the timing-enable signal with respect to a cycle-independent delay in the delay, wherein the cycle-independent delay does not depend on the frequency of the strobe signal. In some embodiments, the first calibration loop and the second calibration loop are cascaded.

Abstract: A memory device includes a DRAM, a first bi-directional tracking circuit and a second bi-directional tracking circuit. The DRAM includes a cell, a word line and a bit line. The first bi-directional tracking circuit is configured to track a first timing constraint associated with turning on or turning off the word line. The second bi-directional tracking circuit is configured to track a second timing constraint associated with turning on the bit line, turning off the bit line, or accessing the cell via the bit line.

Abstract: A semiconductor memory apparatus includes an internal tuning unit configured to tune a generation timing of a data input strobe signal according to a phase difference between an external clock signal and a data strobe clock signal, and a data input sense amplifier configured to transmit data bits to a global line in response to the data input strobe signal.

Abstract: An integrated circuit chip includes a test enable pad configured to receive a test enable signal, a plurality of test input pads including a reset pad, a signal combination unit configured to combine signals input to the plurality of test input pads when the test enable signal is activated, and to generate a plurality of test output signals, a plurality of test output pads configured to output the plurality of test output signals, and a reset control unit configured to generate a system reset signal using a signal input to the reset pad when the test enable signal is deactivated, and to generate the system reset signal using the test enable signal when the test enable signal is activated.

Abstract: Disclosed herein is an apparatus that includes: a first terminal configured to receive a serial write data signal that includes at least four bits transferred in series with each other; a second terminal configured to receive a data strobe signal; a control circuit configured to produce a plurality of internal data strobe signals in response to the data strobe signal; and a serial-to-parallel conversion circuit configured to respond to the data strobe and internal data strobe signals to convert the serial write data signal into a parallel write data signal that includes at least four bits produced in parallel to each other.

Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.

Abstract: A semiconductor memory device includes an internal signal generation unit configured to output a column select signal and a write enable signal in response to an external address, a write circuit unit configured to output internal data corresponding to external data in response to the write enable signal, a core unit configured to store the internal data in response to the column select signal, and an output timing control unit configured to control output timings of the internal signal generation unit and the write circuit unit in response to an external command, an internal synchronization signal, and preamble related information.

Abstract: A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals.

Abstract: A system, includes a controller including a plurality of first external terminals configured to supply a command, a clock signal and an address, and communicate a data, and communicate a strobe signal related to the data, and a semiconductor memory device including a plurality of second external terminals corresponding to the plurality of first external terminals, one of the plurality of first external terminals and one of the plurality of second external terminals transferring an information specifying a length of a preamble of the strobe signal before the semiconductor memory device communicates the data.

Abstract: Disclosed embodiments may include an apparatus having a segment wordline enable coupled to logic to selectively disable ones of a number of segment wordline drivers. The logic may partition a page of the apparatus to reduce power consumed through activation of the disabled ones of the number of segment wordlines. Other embodiments may be disclosed.

Abstract: A system, includes a controller comprising a plurality of first external terminals configured to supply a command and an address, and communicate a data, and communicate a strobe signal related to the data; and a semiconductor memory device including a plurality of second external terminals corresponding to the plurality of first external terminals, at least one of the plurality of first external terminals and at least one of the plurality of second external terminals each being capable of supplying an information specifying a length of a preamble of the strobe signal before the semiconductor memory device communicates the data between the controller and the semiconductor memory device, the semiconductor memory device further including a preamble register configured to be capable of storing the information.

Abstract: A semiconductor memory device, includes a clock terminal provided to receive a clock signal, a data terminal provided to transfer a data therethrough in synchronization with the clock signal, a strobe terminal provided to be related in the data terminal and to transfer a strobe signal therethrough, a command terminal provided to receive a command that communicates the data with an outside thereof, and an address terminal provided to be supplied an information specifying a length of a preamble of the strobe signal from an outside of the semiconductor memory device, prior to communicating the data.

Abstract: A method of operation in a memory controller is disclosed. The method includes receiving a strobe signal having a first phase relationship with respect to first data propagating on a first data line, and a second phase relationship with respect to second data propagating on a second data line. A first sample signal is generated based on the first phase relationship and a second sample signal is generated based on the second phase relationship. The first data signal is received using a first receiver clocked by the first sample signal. The second data signal is received using a second receiver clocked by the second sample signal.

Abstract: A semiconductor memory device includes a CAS latency mode detecting means for outputting a CAS latency control signal in response to a CAS latency mode; and an auto-precharge control means for controlling timing of an auto-precharge operation in response to the CAS latency control signal.

Abstract: A system including a controller and a memory device interconnected to the controller; the controller includes a set of first terminals that is connected to the memory device through a set of first signal lines, and a control circuit configured to generate and output onto the set of first terminals edge specifying information that takes a selected one of first and second states, the edge specifying information being supplied to the memory device to cause the memory device to activate a data strobe signal at a first timing when the selected one of the edge specifying information is the first state and at a second timing, that is different from the first timing, when the edge specifying information is the second state. The control circuit is further configured to generate and output onto the set of first terminals a read command, the read command being supplied to the memory device.

Abstract: Methods and systems for detection and correction of timing signal drift in memory systems are provided. A start time and an end time of a first time interval is determined with control circuitry such that a last falling edge in a first of a plurality of data strobe sequences received from the memory occurs outside of the first time interval. A start time and an end time of a close-enable time interval is adjusted based at least in part on determining whether a second of the plurality of data strobe sequences occurs within the first time interval. Sampling of data received from the memory is disabled in response to determining that the last falling edge in the second received data strobe sequence occurs within the close-enable time interval.

Abstract: A common Delay Locked Loop (DLL) circuit and/or voltage generator circuit is provided in, or associated with. a memory interface interposed between a memory controller and a plurality of memory components. Corresponding circuits in the memory components are disabled and/or bypassed, or the memory components are manufactured without the circuits. Both the DLL circuit and voltage generator draw current, which is multiplied by the number of memory components in a memory system. By operating a single DLL circuit and/or voltage generator in or associated with the memory interface, that generates a read clock signal and/or various voltage levels, respectively, for all memory components in the memory system, power consumption may be significantly reduced.

Abstract: A method and circuit for implementing faster-cycle-time and lower-energy write operations for Synchronous Dynamic Random Access Memory (SDRAM), and a design structure on which the subject circuit resides are provided. A first RAS (row address strobe) to CAS (column address strobe) command delay (tRCD) is provided to the SDRAM for a read operation. A second delay tRCD is provided for a write operation that is substantially shorter than the first delay tRCD for the read operation.

Abstract: Systems and methods are disclosed herein, such as those that operate to control a set of delays associated with one or more data clocks to clock a set of data bits into one or more transmit registers, one or more data strobes to transfer the set of data bits to at least one receive register, and/or a set of memory array timing signals to access a memory array on a die associated with a stacked-die memory vault. Systems and methods herein also include those that perform data eye training operations and/or memory array timing training operations associated with the stacked-die memory vault.

Abstract: Systems and methods are disclosed for calibrating a Data Strobe (DQS) enable/disable signal and for tracking the timing of the DQS enable/disable signal with respect to changes in voltage and temperature (VT) in order to improve the timing margin of the DQS enable/disable signal in programmable devices using Double Data Rate (DDR) memory. In an exemplary embodiment, the system includes a gating circuit, a sampling circuit, and a delay chain tracking circuit. The gating circuit receives a DQS enable signal and a input DQS signal, calibrates the DQS enable signal based on an amount of delay, and outputs the calibrated DQS signal. The sampling circuit provides the amount of delay to the gating circuit based on a sampling clock. The delay chain tracking circuit maintains the timing of the calibrated DQS enable signal over a plurality of clock cycles based on the sampling clock and a leveling clock.

Abstract: A semiconductor memory apparatus includes: a data output signal transmitter configured to receive a data signal and a data mask signal and transmit a data output signal through a global data line, the data output signal being outputted by determining whether the data signal is masked or not; and a write driver configured to receive the data output signal through the global data line and input the received data output signal to a local data line corresponding to the data output signal.

Abstract: A buffer and control circuit for a synchronous memory controller includes first and second differential comparators and control logic. The first differential comparator is provided with positive and negative differential input signals and the second differential comparator is provided with offset positive and negative differential input signals. The first and second differential comparators generate output signals based on magnitudes of the positive and negative differential input signals and the offset positive and negative differential input signals. The control logic generates a reference strobe signal based on the output signals.