Abstract: An electronic device includes a latch clock generation circuit, a command decoder, and a latency shifting circuit. The latch clock generation circuit generates a latch clock based on a chip selection signal. The command decoder generates an internal operation signal from an internal chip selection signal and an internal command generated based on the latch clock. The latency shifting circuit generates an end signal by shifting the internal operation signal in synchronization with a shifting clock by a period corresponding to a latency while an internal operation is performed.

Abstract: A semiconductor device includes an internal clock generation circuit and a data processing circuit. The internal clock generation circuit delays first to fourth division clock signals, which are generated by dividing a frequency of a clock signal, by a delay time adjusted based on a first code signal and a second code signal to generate first to fourth internal clock signals. The data processing circuit aligns internal data in synchronization with the first to fourth internal clock signals to generate output data. The data processing circuit also interrupts generation of the output data based on first and second command blocking signals according to a point in time when a read command is inputted.

Abstract: A system for performing a phase matching operation includes a controller configured to output a dock, a command, and a strobe signal, and to input/output data. The system also includes a semiconductor device configured to generate an internal strobe signal by matching the phases of the command and the strobe signal according to the clock, and to input/output the data in synchronization with the internal strobe signal, wherein the semiconductor device generates the internal strobe signal from the strobe signal by compensating for a delay amount of a first path to which the command is inputted and a delay amount of a second path to which the strobe signal is inputted.

Abstract: Systems and methods are disclosed, including selectively providing one of a first reset or a second reset to transition to a storage system from a low power mode to an operational power mode in response to a hardware reset signal and a value of a control bit on the storage system.

Abstract: An internal latch circuit having a plurality of low initial value D flip-flops, a plurality of high initial value D flip-flops, an internal latch signal generating circuit and a NAND gate, and a method for generating latch signal thereof is provided. First, an input delay signal in response to a clock signal is generated. Then, a first internal input signal, a first reverse internal input signal, a second internal input signal, and a second reverse internal input signal are generated by using the low initial value D flip-flops and the high initial value D flip-flops, based on the internal data strobe signal and in response to the input delay signal, and are transmitted to the internal latch signal generating circuit. Then, the internal latch signal generating circuit outputs the first reverse pre-output signal and the second reverse pre-output signal. Finally, an internal latch signal is generated through a NAND gate.

Abstract: An integrated circuit device outputs a sequence of differently delayed calibration data timing signals to a DRAM component via a data-signal timing line as part of a timing calibration operation and then stores a delay value, based on at least one of the calibration data timing signals, that compensates for a difference in signal propagation times over the data-signal timing line and a command/address-signal timing line. After the timing calibration operation, the integrated circuit device outputs write data to the DRAM component and outputs a write data timing signal, delayed according to the delay value, to via the data-signal timing line to time reception of the first write data within the DRAM.

Abstract: A memory system includes a representative memory device directly outputting a representative data strobe signal, at least one non-representative memory device outputting a non-representative data strobe signal through the representative memory device, and a controller generating an internal delay clock signal synchronized with the representative data strobe signal. The controller outputs a test mode code defining a delay time using the internal delay clock signal as a reference signal. The at least one non-representative memory device adjusts a phase of the non-representative data strobe signal such that the non-representative data strobe signal has a delay time corresponding to the test mode code.

Abstract: Various implementations described herein refer to an integrated circuit having a first memory structure and a second memory structure. The first memory structure is disposed in a first area of the integrated circuit, and the first memory structure has first memory cells with first transistors. The second memory structure is disposed in a second area of the integrated circuit that is different than the first area, and the second memory structure has second memory cells with second transistors that are separate from the first transistors. The second transistors of the second memory cells are arranged to provide an output oscillating frequency for detecting variation of performance of the first transistors of the first memory cells.

Abstract: A memory system including a memory controller with channel interfaces connecting memory groups via channels. Each channel interface communicates control, address and/or data (CAD) signals to a channel-connected memory group synchronously with a slave clock derived from an input clock. The various slave clocks being uniquely generated by application of channel interface specific phase/frequency modulation or temporal delay, such that the respective CAD signals are characterized by skewed transition timing.

Abstract: Apparatuses and methods for wide clock frequency range command paths are disclosed. An example apparatus includes a command decoder and a command timing circuit. The command decoder is configured to receive a command and is further configured to decode the command to provide a decoded command. The command timing circuit is configured to receive the decoded command responsive to a clock and is further configured to provide a delayed internal command having a delay relative to receiving the decoded command based on clock frequency information indicative of a clock frequency of the clock. The command timing circuit includes a plurality of command timing paths. Each of the plurality of command timing paths is configured to provide a respective delay to the decoded command for a respective range of clock frequencies.

Abstract: A method includes varying a number of clock characteristics of each a plurality of memory devices of a memory concurrently, determining a fitness of the memory for each variation of the number of clock characteristics, selecting a particular variation of the number of clock characteristics based on the determined fitness of the memory for the particular variation, changing a setting in each of the plurality of memory devices corresponding to the particular variation to generate an additional variation of the number of clock characteristics, and determining a fitness of the memory for the additional variation.

Abstract: A memory device includes a command decoder configured to receive a command, a data clock receiving circuit configured to receive a data clock signal, and a control logic configured to control the data clock receiving circuit based on the command decoded by the command decoder, and enable the data clock receiving circuit. The control logic enables the data clock receiving circuit in response to the memory device receiving a dynamic data clock command. The data clock receiving circuit is in an enabled state until a predetermined particular command is received.

Abstract: A semiconductor device includes a buffer control circuit and an operation control circuit. The buffer control circuit generates an enable signal based on a self-refresh signal and to generate an end control signal and a supply control signal from a first internal chip selection signal during a self-refresh operation. The operation control circuit generates a frequency information signal from an internal command/address signal when an update signal is inputted during a mode register write operation, adjusts a shift amount based on the frequency information signal when the supply control signal is inputted during the mode register write operation, and generates an internal write command according to the adjusted shift amount during a read-modify-write operation in synchronization with an internal clock signal after generating an internal read command.

Abstract: A storage device includes a first layer extending in a first direction, a second layer extending in a second direction intersecting the first direction, a third layer extending in a third direction intersecting the first and second directions, a first transistor including a first gate electrode electrically connected to the second layer, a first selection transistor having a first end electrically connected to the third layer and a second end electrically connected to the second layer, a first cell including a first element electrically connected between the first and second layers and to a node of the second layer that is between the first gate electrode of the first transistor and the second end of the first selection transistor, and a circuit turning on the first selection transistor to electrically connect the first cell to the third layer during a write operation performed on the first cell.

Abstract: A storage device comprising: a nonvolatile memory device including a plurality of memory blocks; and a device controller configured to control the nonvolatile memory device to determine a memory block to perform a refresh operation and to control the memory block to perform the refresh operation to recover data of the memory block.

Abstract: Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.

Abstract: In various examples, a device comprises a memory. The memory comprises a plurality of dies and logic. The logic may: determine a tolerable bit error rate (BER) of the memory based on whether one of the plurality of dies has failed, and adjust a parameter of the memory based on the tolerable BER.

Abstract: A control method, for a memory array, the control method comprises programming the bit-cell of the memory array in a programming stage; and discharging the bit-cell of the memory array in a discharge stage; wherein the programming stage comprises: programming the bit-cell of the memory array with a plurality of programming voltage pulses; wherein the discharge stage comprises: isolating a select line of the bit-cell of the memory array; and generating a programming voltage pulse to the bit-cell of the memory array; wherein the programming stage can be suspended to a suspend stage by a suspend command after the discharge stage; wherein the suspend command is received during one of the plurality of programming voltage pulse.

Abstract: An aspect a bit selection path configured to propagate a bit selection signal. The bit selection path includes bit selection delay circuitry defining a bit selection delay. The memory array includes a row selection path configured to propagate a row selection signal. The row selection path includes row selection delay circuitry defining a row selection delay. The memory array includes local selection circuitry. The local selection circuitry is configured to receive the bit selection signal from the bit selection path before the row selection signal from the row selection path according to the bit selection delay and the row selection delay.

Abstract: A delay measurement apparatus for measuring a delay unit comprising: a clock; clock counter; a digital signal source that is uncorrelated with the clock; a first detector arranged to detect transitions of the digital signal entering the delay unit; a first accumulator arranged to accumulate the current clock counter value based on the output of the first detector; a second detector arranged to detect transitions of the digital signal exiting the delay unit; a second accumulator arranged to accumulate the current clock counter value based on the output of the second detector; a measurement counter arranged to count the number of transitions of the digital signal passing through the delay unit; and a calculation device arranged to calculate an average number of clock cycles that elapse while a transition of the digital signal passes through the delay unit based on the first accumulator, the second accumulator and the measurement counter.

Abstract: A DLL device and an operation method for the DLL device are provided. The DLL device includes a delay line, a replica circuit, a phase detector, and a delay controller. The delay line delays an input clock in response to a delay code to provide a delayed clock. The replica circuit generates a feedback clock according to the delayed clock. The phase detector compares the input clock with the feedback clock to generate a delay control signal. The delay controller generates the delay code at a first time point according to the delay control signal based on a control clock and delays a replica delay time length to provide the delay code to the delay line at a second time point. The delay line adjusts the input clock at the second time point. A cycle of the control clock is adjusted to be larger than the replica delay time length.

Abstract: A DIMM is described. The DIMM includes circuitry to simultaneously transfer data of different ranks of memory chips on the DIMM over a same data bus during a same burst write sequence.

Abstract: A memory system, a memory device, a memory controller and an operating method thereof. By issuing a first status check signal when a first delay time elapses since a first point in time at which a program operation for first memory cells corresponding to a first word line is started and by issuing a second status check signal when a second delay time different from the first delay time elapses since a second point in time at which a program operation for second memory cells corresponding to a second word line is started, it is possible to efficiently perform a status check operation related with a program operation of data.

Abstract: A memory device includes a memory cell array in which plural memory cells are arranged in a matrix manner, and a mode selection part. The mode selection part has at least any two of a first mode, a second mode, a third mode and selects any operation mode. The first mode is for reading and writing 1-bit data with the first memory cell or the second memory cell. The second mode is for reading and writing the 1-bit data with a cell unit including the N first memory cells and the N second memory cells connected to a bit line pair. The third mode is for reading and writing the 1-bit data with a cell unit including the M first memory cells and the M second memory cells connected to the bit line pair. M and N are 1 or more integers which are different from each other.

Abstract: A non-volatile memory device includes a serial pipeline structure connected to an output stage of a First In, First Out (FIFO) memory. The FIFO memory is configured to store data transmitted through a data path having a wave pipeline structure based on a plurality of FIFO input clock signals and output the stored data based on a plurality of FIFO output clock signals. A serializer is configured to output data to an input/output pad based on a select clock signal. The serial pipeline structure is connected between the FIFO memory and the serializer and configured to compensate for a phase difference between the data output from the FIFO memory and the select clock signal.

Abstract: System, method, and machine readable medium implementing a mechanism for selecting and providing reconfigurable hardware resources in a rack architecture system are described herein. One embodiment of a system includes a plurality of nodes and a configuration manager. Each of the nodes further includes: a plurality of memory resources and a node manager. The node manager is to track the memory resources that are available in the node, determine different possible configurations of memory resources, and generate a performance estimate for each of the possible configurations. The configuration manager is to receive a request to select one or more nodes based on a set of performance requirements, receive from each node the different possible configurations of memory resources and the performance estimate for each of the possible configurations, and iterate through collected configurations and performance estimates to determine one or more node configurations best matching the set of performance requirements.

Abstract: A skew compensation circuit includes a skew detection circuit configured to generate skew detection signals by detecting a skew characteristic of a basic logic element constituting a semiconductor apparatus, a skew compensation signal generation circuit configured to generate a skew compensation signal by comparing the skew detection signals and a plurality of reference voltages, a variable delay circuit configured to generate a compensation signal by delaying an input signal by a delay time varied according to the skew compensation signal, and a reference voltage generation circuit configured to generate the plurality of reference voltages of which offset components are compensated for according to variations of a temperature and an external voltage.

Abstract: Methods, systems, and devices for access line management for an array of memory cells are described. Some memory devices may include a plate that is coupled with memory cells associated with a plurality of digit lines and/or a plurality of word lines. Because the plate is coupled with a plurality of digit lines and/or word lines, unintended cross-coupling between various components of the memory device may be significant. To mitigate the impact of unintended cross-coupling between various components, the memory device may float unselected word lines during one or more portions of an access operation. Accordingly, a voltage of each unselected word line may relate to the voltage of the plate as changes in plate voltage may occur.

Abstract: Customers of shared resources in a multi-tenant environment can have token buckets allocated that have an associated depth and fill rate, with each token enabling the customer to obtain an amount of work from a shared resource. A resource management system can monitor one or more system or output metrics, and can adjust a global fill rate based at least in part upon values of the monitored metrics. Such an approach can provide a fair distribution of work among the customers, while ensuring that the metrics stay within acceptable ranges and there are no drastic changes in performance levels of the system. The fill rate can update dynamically with changes in the monitored parameters, such that the system can float near an equilibrium point. Commitments for specific minimum service levels also can be met.

Abstract: A DIMM is described. The DIMM includes circuitry to multiplex write data to different groups of memory chips on the DIMM during a same burst write sequence.

Abstract: Apparatuses and methods for providing active an inactive clock signals are disclosed. An example apparatus includes an input clock buffer and a clock divider circuit. The input clock buffer includes a receiver circuit configured to receive first and second clock signals or first and second constant voltages. The receiver circuit is further configured to provide first and second output signals based on the complementary clock signals or the first and second constant voltages. The first and second clock signals are complementary and the second constant voltage is less than the first constant voltage. The clock divider circuit is configured to receive the first and second output signals and provide multiphase clock signals based on the first and second output signals from the input clock buffer.

Abstract: A Hardware-Embedded Delay PUF (HELP) leverages entropy by monitoring path stability and measuring path delays from core logic macros. HELP incorporates techniques to deal with bias. A unique feature of HELP is that it may compare data measured from different test structures. HELP may be implemented in existing FPGA platforms. HELP may leverage both path stability and within-die variations as sources of entropy.

Abstract: A circuit includes a serializer configured to receive a non-serialized input signal having a first bit-width and generate a plurality of serialized input signals each having a second bit-width. A memory array is configured to receive each of the plurality of serialized input signals. The memory array is further configured to generate a plurality of serialized output signals. A de-serializer is configured to receive the plurality of serialized output signals and generate a non-serialized output signal. The plurality of serialized output signals each have a bit-width equal to second bit-width and the non-serialized output signal has a bit-width equal to the first bit-width.

Abstract: Embodiments disclose a delay locked loop. The delay locked loop including a main delay circuit configured to generate initial clocks by delaying an internal clock, and sub-delay lines configured to generate phase clocks having a phase difference corresponding to a desired initial delay by respectively delaying the internal clock and the initial clocks. The phase difference among the phase clocks may be adjusted according to delay values of the sub-delay lines.

Abstract: Various implementations described herein refer to an integrated circuit having a sense amplifier that operates with a clock signal, and the sense amplifier may be biased with a bias signal that affects duration of the clock signal. The integrated circuit may include a delay circuit coupled to the sense amplifier, and the delay circuit may turn-off the clock signal. The delay circuit may have a current-starved delay stage that receives an input signal having a falling edge and provides a current-starved delay signal biased by the bias signal that also biases the sense amplifier.

Abstract: Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.

Abstract: A semiconductor device may include a first internal command generation circuit configured to advance a phase of a first external command in accordance with a delay time of an on die termination (ODT) path and a first latency and generate the first delay command; and a second internal command generation circuit configured to advance a phase of a second external command in accordance with a delay time of a clock path and a second latency and to generate a second delay command.

Abstract: Systems, methods, and apparatuses for temperature-compensated operation of electronic devices are described. For example, an apparatus for performing voltage compensation on a sense amplifier based on temperature may include a sense amplifier control circuit coupled to the sense amplifier to provide a compensation pulse to the sense amplifier, wherein the sense amplifier operates in a voltage compensation phase during the compensation pulse. The apparatus may determine the compensation pulse responsive to a voltage compensation duration signal that is based on the operating temperature of the apparatus. The voltage compensation occurs when there is no activate command immediately before or immediately after so that compensation duration change do not happen during an activate command from the command decoder.

Abstract: Apparatuses and methods for reducing row address (RAS) to column address (CAS) delay (tRCD) are disclosed. In some examples, tRCD may be reduced by providing a non-zero offset voltage to a target wordline at an earlier time, such as during a threshold voltage compensation phase of a sense operation. Setting the wordline to a non-zero offset voltage at an earlier time may reduce a time for the wordline to reach an activation voltage, which may reduce tRCD. In other examples, protection against row hammer attacks during precharge phases may be improved by setting the wordline to the non-zero offset voltage.

Abstract: Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to preserve states of memory elements in association with data operations using variable access signal magnitudes for other memory elements, such as implemented in third dimensional memory technology. In some embodiments, a memory device can include a cross-point array with resistive memory elements. An access signal generator can modify a magnitude of a signal to generate a modified magnitude for the signal to access a resistive memory element associated with a word line and a subset of bit lines. A tracking signal generator is configured to track the modified magnitude of the signal and to apply a tracking signal to other resistive memory elements associated with other subsets of bit lines, the tracking signal having a magnitude at a differential amount from the modified magnitude of the signal.

Abstract: Provided are integrated circuits including a plurality of standard cells aligned along a plurality of rows. The integrated circuit includes first standard cells aligned on the first row and including first conductive patterns to which a first supply voltage is applied in a conductive layer and second standard cells aligned on the second row which is adjacent to the first row in the conductive layer and including second conductive patterns to which the first supply voltage is applied in the conductive layer. A pitch between the first conductive patterns and the second conductive patterns may be less than a pitch provided by single-patterning.

Abstract: There may be provided an electronic device, and more particularly, a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a memory cell array including a plurality of memory cells. The semiconductor memory device may include an operation control signal generator configured to receive a request for performing a target operation from the controller configured to control the semiconductor memory device and to generate a synchronizing signal for performing the target operation. The semiconductor memory device may include a temperature detect circuit configured to detect temperatures of the plurality of memory cells in response to the synchronizing signal.

Abstract: A transmission device of the disclosure includes: a plurality of delay sections having changeable delay amounts; a driver section that includes a plurality of drivers and transmits a data signal indicating a sequence of symbols using the plurality of drivers, the plurality of drivers being provided to correspond to the plurality of delay sections and setting a voltage at a corresponding output terminal to a mutually different voltage on the basis of a signal delayed by a corresponding delay section of the plurality of delay sections; and a controller that sets the respective delay amounts of the plurality of delay sections on the basis of a transition of a symbol in the sequence of symbols.

Abstract: A temperature compensated current controlled oscillator (CCO) including a first current generator configured to produce a proportional to absolute temperature (PTAT) current based upon a trim signal, a second current generator configured to produce a complementary to absolute temperature (CTAT) current based upon a temperature measurement, and a ring oscillator configured to receive the PTAT current and the CTAT current and to produce a frequency signal based upon the PTAT current and the CTAT current.

Abstract: A semiconductor device includes a latch control circuit configured to generate a latch input signal, which is enabled in response to a latency signal, and configured to generate a latch output signal, which is enabled in response to an order control signal. The semiconductor device also includes a pipe latch circuit configured to latch input data in response to a pipe input signal and configured to output the latched input data as latch data in response to a pipe output signal. The semiconductor device additionally includes a data output circuit configured to latch the latch data in response to the latch input signal and configured to output the latched latch data as output data in response to the latch output signal, wherein the output data is outputted by performing an alignment operation for the latch data in response to the latch output signal.

Abstract: A clock signal is transmitted to first and second integrated circuit (IC) components via a clock signal line, the clock signal having a first arrival time at the first IC component and a second, later arrival time at the second IC component. A write command is transmitted to the first and second IC components to be sampled by those components at respective times corresponding to transitions of the clock signal, and write data is transmitted to the first and second IC components in association with the write command. First and second strobe signals are transmitted to the first and second IC components, respectively, to time reception of the first and second write data in those components. The first and second strobe signals are selected from a plurality of phase-offset timing signals to compensate for respective timing skews between the clock signal and the first and second strobe signals.

Abstract: Apparatuses, multi-memory systems, and methods for controlling data timing in a multi-memory system are disclosed. An example apparatus includes a plurality of memory units. In the example apparatus, a memory unit of the plurality of memory units includes a memory configured to provide associated read data to a data pipeline based on row control signals and column control signals. The memory unit further includes local control logic configured to provide the row control signals and the column control signals to the memory, and a configurable delay circuit coupled between the local control logic and the memory, the configured to delay receipt of the column control signals to the memory.

Abstract: An example apparatus includes a processing in memory (PIM) capable device having an array of memory cells and sensing circuitry coupled to the array. The PIM capable includes a row address strobe (RAS) component selectably coupled to the array. The RAS component is configured to select, retrieve a data value from, and input a data value to a specific row in the array. The PIM capable device also includes a RAS manager selectably coupled to the RAS component. The RAS manager is configured to coordinate timing of a sequence of compute sub-operations performed using the RAS component. The apparatus also includes a source external to the PIM capable device. The RAS manager is configured to receive instructions from the source to control timing of performance of a compute operation using the sensing circuitry.

Abstract: A circuit includes a serializer configured to receive a non-serialized input signal having a first bit-width and generate a plurality of serialized input signals each having a second bit-width. A memory array is configured to receive each of the plurality of serialized input signals. The memory array is further configured to generate a plurality of serialized output signals. A de-serializer is configured to receive the plurality of serialized output signals and generate a non-serialized output signal. The plurality of serialized output signals each have a bit-width equal to second bit-width and the non-serialized output signal has a bit-width equal to the first bit-width.

Abstract: A cycle control circuit may include a judgement pulse generation circuit, a detection signal generation circuit or a flag generation circuit. The judgement pulse generation circuit may be configured to set a predetermined value based on an initialization signal and a period signal, and to generate a judgment pulse. The detection signal generation circuit may be configured to generate a detection signal from a reference flag. The flag generation circuit may be configured to generate a reference flag based on a reference signal. A cycle of the reference signal may be maintained or adjusted based on the reference flag.