Abstract: A memory system includes a memory device including a plurality of memory blocks, each including a plurality of memory cells coupled to a plurality of word lines, and a controller configured to determine an operation status regarding a selected memory block among the plurality of memory blocks by performing read test operations to the selected memory block in stages. During the read test operations, the controller adjusts the numbers of word lines selected in each of the stages, based on an error.

Abstract: A memory controller includes a command queue having a first input for receiving memory access requests, and a memory interface queue having an output for coupling to a memory channel adapted for connecting to at least one dynamic random access memory (DRAM) module. A refresh control circuit monitors activate commands to be sent over the memory channel. In response to an activate command meeting a designated condition, the refresh control circuit identifies a candidate aggressor row associated with the activate command. A command is sent to the DRAM requesting that the candidate aggressor row be queued for mitigation in a future refresh or refresh management event.

Abstract: A memory cell has first, second, third and fourth transistors forming first and second cross-coupled inverters. The inverters define first and inverted first storage nodes; the first connected to first reference and first supply voltages, second connected to second reference and second supply voltages. A fifth transistor connected between first storage node and first bit line; sixth transistor connected between inverted first node and second bit line; first word line connected to fifth transistor, controlling access of first bit line to first node; second word line connected to sixth transistor, controlling access of second bit line to inverted first node. Relative voltage levels of first word line and first reference voltages, or first supply and first reference voltages, or second word line and second reference voltages, or second supply and second reference voltages, or first and second reference voltages are configured so first/inverted node are read/written independently.

Abstract: A circuit for reading or writing a RAM includes a shift register coupled to the RAM, a test data input, and a test data output. The circuit further includes a control circuit configured to generate a pulse every N clock cycles, each pulse triggering a RAM access operation transferring data between the shift register and the RAM, N being equal to a data width of the RAM divided by a parallel factor, the parallel factor being a number of pins in either the test data input or the test data output configured for parallel data loading.

Abstract: A method for determining a sense boundary of a sense amplifier includes: writing first data into a memory array; reading the first data in a first memory cell of the memory array, and reversely writing second data into the first memory cell; reading, after a preset row precharge time, the first data in a second memory cell on a bit line where the first memory cell is located; and reversely writing the second data into the second memory cell when the first data is read in the second memory cell.

Abstract: A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.

Abstract: Disclosed is an operating method of a memory device communicating with a memory controller, which includes receiving a first command from the memory controller, the first command indicating initiation of synchronization of a data clock signal and defining a clock section corresponding to the synchronization, preparing a toggling of the data clock signal during a preparation time period, processing a first data stream based on the data clock signal toggling at a reference frequency, and processing a second data stream based on the data clock toggling at the reference frequency and extended for a period of the defined first clock section.

Abstract: A semiconductor device is provided, which contains a memory bank including M primary word lines and R replacement word lines, a row/column decoder, and an array of redundancy fuse elements. A sorted primary failed bit count list is generated in a descending order for the bit fail counts per word line. A sorted replacement failed bit count list is generated in an ascending order of the M primary word lines in an ascending order. The primary word lines are replaced with the replacement word lines from top to bottom on the lists until a primary failed bit count equals a replacement failed bit count or until all of the replacement word lines are used up. Optionally, the sorted primary failed bit count list may be re-sorted in an ascending or descending order of the word line address prior to the replacement process.

Abstract: A TPM with programmable fuses in an SOC includes an on-die RAM storing a blown-fuse count and a TPM state read from off-die NV memory. During initialization, if the blown-fuse count is greater than a TPM state fuse count, a TPM state PIN-attempt-failure count is incremented, thereby thwarting a replay attack. If a PIN satisfies a PIN failure policy, and if a TPM state previously-passed-PIN indicator is set to true, a fuse is blown and the blown-fuse count incremented depending on the PIN being incorrect, but if the TPM state previously-passed-PIN indicator is set to false, a fuse is blown and the blown-fuse count incremented independent of whether the PIN is correct or incorrect. The TPM state fuse count is set equal to the blown-fuse count. If a counter cleared before processing the PIN remains cleared during the next initialization, a fuse voltage cut is detected and a penalty imposed.

Abstract: A memory device includes a page buffer, a voltage generator, and a test controller. The page buffer is connected to a memory cell through a bit line, and is configured to sense a threshold voltage of the memory cell through a potential of a sensing node electrically connected to the bit line. The voltage generator is configured to generate a test voltage to be applied to the sensing node. The test controller is configured to control the voltage generator to apply the test voltage to the sensing node, and detect a defect of the page buffer, based on a leakage current value of the sensing node.

Abstract: Techniques to couple a high bandwidth memory device on a silicon substrate and a package substrate are disclosed. Examples include selectively activating input/out (I/O) or command and address (CA) contacts on a bottom side of a logic layer for the high bandwidth device based on a mode of operation. The I/O and CA contacts are for accessing one or more memory devices include in the high bandwidth memory device via one or more data channels.

Abstract: An apparatus to implement an IP independent secure firmware load into an IP agent without a ROM to establish hardware root of trust is disclosed. The apparatus includes a plurality of agents, at least one agent including an isolated memory region accessible only to a trusted entity of the at least one agent and a main memory, and a processor to allocate a section of the isolated memory region of the at least one agent, verify a first stage firmware module, the first stage firmware module comprising instructions to enable the at least one agent to load and verify a second stage firmware module, place the first stage firmware module into memory of the at least one agent without a ROM to establish the hardware root of trust.

Abstract: A semiconductor memory device includes a memory cell array, first and second pads, an interface circuit connected to the first pad and configured to transmit data input through the first pad to the memory cell array and output data received from the memory cell array through the first pad, a ZQ calibration circuit that is connected to the second pad and executes a ZQ calibration to generate a ZQ calibration value, and a sequencer configured to control the ZQ calibration circuit to apply the ZQ calibration value to the interface circuit. A command set is input through the first pad after reading data from the memory cell array to cause the interface circuit to output the data read from the memory cell array, and the ZQ calibration circuit executes the ZQ calibration after the command set is input and before the data is output through the first pad.

Abstract: A memory device includes a memory cell array including a plurality of banks each including a plurality of memory cells connected to a plurality of word lines, and a row decoder block connected to the plurality of banks. In a first operation mode, the row decoder block receives a first row address and a first bank address together with an activation command and activates a word line selected by the first row address from among the plurality of word lines of a bank selected by the first bank address from among the plurality of banks. In a second operation mode, the row decoder block receives a second row address and a second bank address together with the activation command and activates a word line selected by the second row address from among the plurality of word lines of each of at least two banks of the plurality of banks.

Abstract: A memory controller includes: a test module for generating a test command, a test address, and test data during a test operation; a refresh control module for receiving the test command and the test address as an active command and an active address, and generating a first target address by sampling the active address according to the active command, during the test operation; a command/address generation module for providing the active address together with the active command, and providing the first target refresh command together with the first target address to a memory device, while determining whether to repair the active address according to a repair control signal; and a repair analysis module for generating the repair control signal based on a comparison result of the test data and read data from the memory device, during the test operation.

Abstract: Disclosed herein is an apparatus that includes a fuse array circuit including a plurality of fuse sets each assigned to a corresponding one of a plurality of fuse addresses and configured to operatively store a fuse data, and a first circuit configured to generate and sequentially update a fuse address to sequentially read the fuse data from the plurality of fuse sets. The first circuit is configured to change a frequency of updating the fuse address based on a first signal.

Abstract: According to one or more embodiments, the semiconductor integrated circuit device includes a pattern generator, a result comparator, and a control circuit. The pattern generator supplies input data to a device-under-test. The result comparator compares output data of the device-under-test with expected value data and outputs a test result signal. The control circuit controls the pattern generator and the result comparator. The device-under-test and the result comparator are commonly connected to a first clock line. The pattern generator and the control circuit are commonly connected to a second clock line different from the first clock line.

Abstract: Various embodiments include a memory device that is capable of performing command address interface training operations, to determine that certain timing conditions are met, with fewer I/O pins relative to prior approaches. Prior approaches for command address interface training involve loading data via a set of input pins, a clock signal, and a clock enable signal that identifies when the input pins should be sampled. Instead, the disclosed memory device generates a data pattern within the memory device that matches the data pattern continuously being transmitted to the memory device by an external memory controller. The memory device compares the generated data pattern with the received data pattern and transmits the result of the comparison on one or more data output pins. The memory controller receives and analyzes the result of the comparison to determine whether the command address interface training passed or failed.

Abstract: A decoder decodes a memory address and selectively drives a select line (such as a word line or mux line) of a memory. An encoding circuit encodes the data on select lines to generate an encoded address. The encoded address and the memory address are compared by a comparison circuit to generate a test result signal which is indicative of whether the decoder is operating properly. To test the comparison circuit for proper operation, a subset of an MBIST scan routine causes the encoded address to be blocked from the comparison circuit and a force signal to be applied in its place. A test signal from the scan routine and the force signal are then compared by the comparison circuit, with the test result signal generated from the comparison being indicative of whether the comparison circuit itself is operating properly.

Abstract: A TPM with programmable fuses in an SOC includes an on-die RAM storing a blown-fuse count and a TPM state read from off-die NV memory. During initialization, if the blown-fuse count is greater than a TPM state fuse count, a TPM state PIN-attempt-failure count is incremented, thereby thwarting a replay attack. If a PIN satisfies a PIN failure policy, and if a TPM state previously-passed-PIN indicator is set to true, a fuse is blown and the blown-fuse count incremented depending on the PIN being incorrect, but if the TPM state previously-passed-PIN indicator is set to false, a fuse is blown and the blown-fuse count incremented independent of whether the PIN is correct or incorrect. The TPM state fuse count is set equal to the blown-fuse count. If a counter cleared before processing the PIN remains cleared during the next initialization, a fuse voltage cut is detected and a penalty imposed.

Abstract: Presented embodiments facilitate efficient and effective flexible implementation of different types of testing procedures in a test system. In one embodiment, a flexible sideband support system comprises a load board, testing electronics coupled to the load board, a controller coupled to the testing electronics. The load board is configured to couple with a plurality of devices under test (DUTs), wherein the load board includes in-band testing ports and sideband testing ports. The testing electronics is configured to test the plurality of DUTs, wherein a portion of testing electronics are organized in sideband resource groups. The controller is configured to direct testing of the DUTs, wherein the controller is coupled to the testing electronics and the controller directs selective allocation of the testing electronics in the sideband resource groups to various testing operations of the DUTs.

Abstract: A data processing device for providing data storage services includes memory, persistent storage, and a device manager. The persistent storage stores a code repository. The state manager obtains a code update request for a new state for the device manager; injects state manager code to begin execution of the state manager in response to obtaining the code update request; updates the device manager data using the code repository and a memory region state map to obtain an updated device manager; and extracts the state manager code to resume execution of the updated device manager.

Abstract: In a method of operating a memory controller, a decoding status flag is received from a memory module including a plurality of data chips and at least one parity chip. Each of the plurality of data chips and the at least one parity chip may include an on-die error correction code (ECC) engine. The decoding status flag is generated by the on-die ECC engines. A first number and a second number may be obtained based on the decoding status flag. The first number represents a number of first chips including an uncorrectable error that is uncorrectable by the on-die ECC engine. The second number represents a number of second chips including a correctable error that is correctable by the on-die ECC engine. At least one of a plurality of decoding schemes is selected based on at least one of the first number and the second number. A system ECC engine may perform ECC decoding on at least one of the first chips and the second chips based on the selected decoding scheme.

Abstract: Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.

Abstract: Systems, apparatus and methods are provided for electrical mirroring implemented by a storage controller in a non-volatile storage system. In one embodiment, a non-volatile storage system may comprise a plurality of non-volatile storage devices and a storage controller. The storage controller may be configured to perform an electrical mirroring configuration process comprising: determining a system topology of the non-volatile storage system and which targets are in mirrored non-volatile storage devices and setting respective register bits in the storage controller for all targets in all mirrored non-volatile storage devices of the plurality of non-volatile storage devices.

Abstract: A memory device includes a memory cell array and a test controller. The memory cell array includes a plurality of memory cells, where the memory cell array is divided into multiple regions. The test controller is configured to perform a parallel bit test (PBT) on the plurality of memory cells, where the test controller selects fail data including a fail data bit among internal data output from the multiple regions during the PBT, and outputs the fail data via a data input/output signal line to the outside of the memory device.

Abstract: A chip with pad tracking having an input/output buffer (I/O buffer), a pad, and a bias circuit. The I/O buffer is powered by a first power and is coupled to the pad. The pad is coupled to the system power. The bias circuit generates a bias signal to be transferred to the I/O buffer to block a leakage path within the I/O buffer when the system power is on and the first power is off. The bias circuit is a voltage divider which generates a divided voltage as the bias signal. In an example, the bias circuit is powered by a second power that is independent from the first power and is not drawn from the pad. In another example, a power terminal of the bias circuit is coupled to an electrostatic discharging bus, and the pad is coupled to the electrostatic discharging bus through a diode.

Abstract: A semiconductor device includes a semiconductor die having a peripheral region surrounding, a defect detection circuit in the peripheral region, the defect detection circuit arranged in an open conduction loop, the defect detection circuit comprising a plurality of latch circuits and a plurality of defect detection conduction paths, each defect detection conduction path of the plurality of defect detection conduction paths connecting two adjacent latch circuits of the plurality of latch circuits, and a test control circuitry configured to perform (a) a test write operation by transferring bits of an input data pattern in a forward direction of the open conduction loop to cause the plurality of latch circuits to store the bits of the input data pattern in the plurality of latch circuits, and (b) a test read operation by transferring bits stored in the plurality of latch circuits in a backward direction of the open conduction loop.

Abstract: Embodiments presented herein are directed to testing and/or debugging a memory device of a memory module (e.g., a dual in-line memory module (DIMM)) without having to remove the DIMM from a corresponding computing device and without having to interrupt operation of the computing device. A particular memory device (e.g., DRAM) may be identified for testing and/or debugging based on a failure message. However, the failure message may not identify a specific location or hardware of the module that caused the failure. Embodiments presented herein provide techniques to obtain data for analysis to determine and/or deliver a cause of the failure while reducing or eliminating downtime of the computing device. Test modes to do so may include a synchronous test mode, an asynchronous test mode, and an analog compare mode. A test mode may be selected based on the failure or a signal/function of the DRAM to be tested or debugged.

Abstract: A system includes a memory array, a thermometer, and control logic, operatively coupled with the memory array and the thermometer, to perform operations including causing the thermometer to obtain a first temperature result, monitoring a time since obtaining the first temperature result, determining whether the time satisfies a threshold time condition, in response to determining that the time satisfies the threshold time condition, causing the thermometer to obtain a second temperature result from an automatic temperature reading, determining a difference between the second temperature result and a previously stored temperature result, and filtering the second temperature result based on the difference to obtain a new stored temperature result.

Abstract: A semiconductor memory device may include a core circuit including a plurality of memory cell arrays electrically connected between a plurality of row lines and a plurality of column lines, and a column path control circuit configured to generate a preliminary column pulse from a command signal irrelevant to a column address signal, to generate a main column pulse in response to an enable time point of the column address signal and an enable time point of the preliminary column pulse, and to enable an access target column line among the plurality of column lines.

Abstract: An apparatus comprises a plurality of memory cells; a plurality of sense circuits, a sense circuit comprising a sense node selectively coupled to a bitline coupled to a first cell of the plurality of memory cells; and a controller to transpose a value indicative of a voltage of the first cell to the sense node; isolate the sense node from the bitline; and calibrate a parameter for the sense circuit based on outputs of the sense circuit for each of a plurality of different applied values of the parameter.

Abstract: A pipe latch circuit includes a data latch circuit configured to latch an input data based on an input control signal and output the latched input data as a latch data based on an output control signal, a sense amplification circuit configured to sense and amplify the latch data based on a sum output control signal, and a data driving circuit configured to drive an output data from the latch data based on the sum output control signal.

Abstract: The present invention is related to a digital circuit testing and analysis module system comprising a memory (22). The memory (22) is addressed by numerical values defined by a group of digital signals. A respective memory location associated with a specific numerical value indicates a status of the group of digital signals. The status can for example reflect the validity of the signals in the group of signals when testing a circuit.

Abstract: Data from a first memory cell of a plurality of memory cells is read, and it is determined whether the data stored at the first memory cell comprises an error. Upon determining that the data stored at the first memory cell comprises the error, it is determined whether an error correction operation on the data stored at the first memory cell is successful. Responsive to determining that the error correction operation on the data stored at the first memory cell is unsuccessful, a second memory cell of the plurality of memory cells is identified and a two-pass programming operation is performed on the second memory cell instead of the first memory cell.

Abstract: A device comprising: a control bus; a plurality of requesting circuits each accessible on the control bus, wherein each of the plurality of requesting circuits is operable to dispatch read or write requests to the control bus for delivery to at least one of a plurality of receiving circuits, and the plurality of receiving circuits each accessible on the control bus, and each of which is operable to receive requests from the at least one control bus and service the requests by providing at least one of read or write access to storage associated with the respective receiving circuit, wherein the control bus provides a ring path configured to support, the requests in circulation in the ring path, wherein the control bus is configured to propagate each of at least some of the requests at least until those requests have been serviced by at least one of the receiving circuits.

Abstract: A defect detecting method for a Word Line (WL) driving circuit includes: m WLs correspondingly connected to m different WL driving circuits are selected from a memory cell array and corresponding WL driving circuit arrays to serve as m WLs to be tested, one of which is set as a first WL and the remaining m-1 ones are set as second WLs; first potential is written into memory cells correspondingly connected to the m WLs to be tested; second potential is written into memory cells correspondingly connected to the first WL; real-time potentials of the memory cells connected to respective second WLs are sequentially read, and when difference value between the real-time potential of one target memory cell and the first potential is greater than first pre-set value, it is determined that the WL driving circuit connected to the second WL corresponding to the target memory cell has a defect.

Abstract: A semiconductor device includes a flag generation circuit configured to receive region fuse data and used fuse data which are generated from a fuse set selected based on a fuse set selection signal among from fuse sets and generate a bank resource flag to control a repair operation for a bank on which a repair operation has not been performed, based on the region fuse data and the used fuse data. The semiconductor device also includes a repair control circuit configured to control the repair operation for banks sharing the fuse sets based on the bank resource flag.

Abstract: A memory controller having a data receiver to sample data at a sample timing using a strobe signal, wherein the data and the strobe signal are sent by a memory device in connection with a read operation initiated by the memory controller, and a strobe receiver to receive the strobe signal, wherein a phase of the strobe signal has a drift relative to a reference by an amount. The memory controller further having a monitoring circuit to monitor the strobe signal and determine the amount of the drift, and an adjustment circuit to update the sample timing of the data receiver based on the amount of drift determined by the monitoring signal.

Abstract: According to one embodiment, an information processing apparatus includes a connector into which a first-type semiconductor storage device operating with n types of power supply voltages or a second-type semiconductor storage device operating with m types of power supply voltages less than the n types of power supply voltages is capable of being placed. The apparatus checks whether or not a notch is formed at a predetermined position of a semiconductor storage device placed into the connector, and supplies the m types of power supply voltages to the semiconductor storage device when the notch is formed at the predetermined position.

Abstract: A method for detecting an address error when reading a bitstream from a memory is proposed, wherein a check is carried out as to whether the bitstream in conjunction with the present read address is a code word of an error code and wherein, should the bitstream in conjunction with the present read address not be a code word of the error code, an address error is subsequently detected provided the error code does not correct an error correctable thereby. Accordingly, an apparatus, a system and a computer program product are specified.

Abstract: A memory system includes a memory device including a plurality of banks, each including row and column spares for replacing defective rows and columns; and a memory controller suitable for controlling an operation of the memory device, wherein the memory controller includes: a built-in self-test (BIST) circuit suitable for performing a test operation on the banks and generating fail addresses for each bank based on a result of the test operation; and a built-in redundancy analysis (BIRA) circuit suitable for determining first and second spare counts by respectively counting the number of repairable row spares and repairable column spares, and selecting a target repair address from the fail addresses for each bank, according to the first and second spare counts.

Abstract: Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a semiconductor device is disclosed. The semiconductor device includes a first semiconductor die having a first bonding surface that is formed with a first set of contacts patterned with a first connection pitch. A second semiconductor die has a second bonding surface that is formed with a second set of contacts patterned with a second connection pitch. The second set of contacts are further patterned with a paired offset. The second semiconductor die is bonded to the first semiconductor die such that the first set of contacts is disposed in opposed electrical engagement with at least a portion of the second set of contacts.

Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.

Abstract: A method and an apparatus for testing a chip, as well as a storage medium, and a chip thereof are provided. The chip includes an operation module. The method includes receiving, via a first pin of the chip, a test control signal indicating a test type of the operation module; performing a first test for the operation module using a first test vector based on the test type; or performing a second test for the operation module using a second test vector, where the first test is a test for the memory included in the operation module and the second test is a test for the functional logic in included in the operation module.

Abstract: In the present disclosure, it has been appreciated that memory structures, such as static random access memory (SRAM) structures, have feature densities that are extremely high. While this is beneficial in allowing the memory structures to store large amounts of data in a small chip footprint, it is potentially detrimental in that it makes the memory structures more susceptible to leakage current than the other areas of the chip. Accordingly, the present disclosure provides pseudo memory structures which are similar in terms of layout spacing to actual memory structures. However, rather than being used as actual memory structures that store data during operation, these pseudo memory structures are used to characterize leakage current in the design of the IC and/or to characterize the fabrication process used to manufacture the IC.

Abstract: A system and method for measuring the degradation of one or more memory devices of a memory sub-system. An example system including a memory controller operatively coupled with a memory device and configured to perform operations comprising: testing different values for a setting of the memory device, wherein the setting of the memory device affects a duty cycle of a signal internal to the memory device; selecting an optimum value for the setting based on access errors during the testing, wherein the optimum value minimizes access errors; determining a degradation measurement for the memory device based on the optimum value; and providing a notification to a host system based on the degradation measurement.

Abstract: An apparatus includes a memory sub-system comprising a plurality of memory blocks and a memory block defect detection component. The memory block defect detection component is to set, for a memory block among the plurality of memory blocks, a first block defect detection rate and determine whether the first block defect detection rate is greater than a threshold block defect detection rate for the at least one memory block. In response to a determination that the first block defect detection rate is greater than the threshold block defect detection rate for the memory block, the memory block defect detection component is to assert a program command on the memory block determine whether a program operation associated with assertion of the program command on the at least one memory block is successful.

Abstract: An electronic device includes a masking signal generation circuit configured to generate a test masking signal by receiving a fuse data during a period in which a test masking mode is executed; and a test mode signal generation circuit configured to, when a test command for executing a test in an internal circuit is input, execute the test based on the test masking signal.

Abstract: Methods of operating a memory device are disclosed. A method may include enabling a first and second row section units a number of row section units of a memory device in response to a row address. The method may also include comparing a selected column address to a number of column addresses of defective memory cells of a first row section of the first row section unit. Moreover, in response to the selected column address matching a first column address of the number of column addresses, the method may include activating a second row section of the second row section unit, conveying a redundant column select signal to the memory array to select a redundant memory cell of the second row section. Memory devices and systems are also disclosed.