Abstract: A system is provided to manage on-chip memory access for multiple threads. The system comprises multiple parallel processing units to execute the threads, and an on-chip memory including multiple memory units and each memory unit includes a first region and a second region. The first region and the second region have different memory addressing schemes for parallel access by the threads. The system further comprises an address decoder coupled to the parallel processing units and the on-chip memory. The address decoder is operative to activate access by the threads to memory locations in the first region or the second region according to decoded address signals from the parallel processing units.

Abstract: Techniques for negative voltage generation for a computer memory are described herein. An aspect includes enabling a first negative word line voltage (VWL) clock generator. Another aspect includes providing, by the first VWL clock generator, based on a clock signal, a first pump clock signal to a first VWL pump, and a second pump clock signal to a second VWL pump. Another aspect includes generating a VWL based on the first VWL pump and the second VWL pump, wherein the VWL is provided to a word line driver of a computer memory module. Another aspect includes comparing the VWL to a VWL reference voltage. Another aspect includes, based on the VWL being below the VWL reference voltage, disabling the first VWL clock generator, wherein the first VWL pump and the second VWL pump are disabled based on disabling the first VWL clock generator.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A power-supply device and an electronic device including the relate to technology for a data storage device. The electronic device includes a power-supply device and a controller. The power-supply device generates a sudden power loss (SPL) detection signal in a sudden power off (SPO) state by detecting a level of an external power, generates a charging sense signal indicative of a charging capacity of an auxiliary power-supply circuit, divides the charging capacity into a plurality of charging levels, detects a level of the charging capacity, and generates a charging sense signal indicating a charging level of the auxiliary power-supply circuit in response to the detected charging level. The controller stores flushing information in at least one non-volatile memory device when the SPL detection signal is activated, and variably adjust an amount of storage in the non-volatile memory device in response to the charging sense signal.

Abstract: The present disclosure includes apparatuses and methods for providing power availability information to memory. A number of embodiments include a memory and a controller. The controller is configured to provide power and power availability information to the memory, and the memory is configured to determine whether to adjust its operation based, at least in part, on the power availability information.

Abstract: A memory device and a method of assisting a read operation in the memory device are introduced. The memory device may include a logic circuit, a charge pump, a switch and a sense amplifier. The logic circuit is configured to receive at least one input signal and perform a logic operation on the at least one input signal to output an enable signal. The charge pump is coupled to the logic circuit and is configured to generate a boost voltage according to the enable signal. The switch is coupled between the charge pump and a sensing power supply line, and is configured to control an electrical connection between the charge pump and the sensing power supply line according to the enable signal to supply the boost voltage to the sensing power supply line. The sense amplifier is configured to perform a read operation using the boost voltage from the sensing power supply line.

Abstract: A memory macro includes: word lines; memory cells arranged in an array, the array including rows and columns, the rows corresponding to the word lines, each memory cell being configured to receive a first reference voltage, and each column having voltage supply nodes corresponding to corresponding ones of the memory cells in the column; and switching circuits corresponding to the columns, each switching circuit being configured to selectively provide a first voltage value of a first voltage source or a second voltage value of a second voltage source to the voltage supply nodes; and wherein the first and second voltage values differ by a predetermined voltage value; each of the first and second voltage values is different than a second reference supply voltage; and the word lines are configured to receive the second voltage value as a voltage value representing a high logical value of the word lines.

Abstract: A method includes receiving a first signal at an input of a device driver included at an electronic device, the first signal representing first information. A second signal representing the first information is provided at an output of the device driver. The output of the device driver, under normal operating conditions, is coupled to an output terminal of the electronic device. A third signal at the output terminal is received at feedback circuitry of the electronic device. The feedback circuitry identifies a fault at the output terminal based on the third signal and the first signal.

Abstract: A circuit structure is electrically connected to a power source. The circuit structure includes a first circuit module and a second circuit module. The first circuit module includes a first module power switch and a plurality of circuits. The first module power switch is electrically connected to the power source. The first circuit module has a first module current. The second circuit module includes a second module power switch and a plurality of circuits. The second power switch is electrically connected to the power source. The second circuit module has a second module current. A turn-on order of the first module power switch and the second power switch is determined based on the first module current and the second module current.

Abstract: A data receiving stage circuit of a memory circuit receives a serial input signal and a chip enable signal. A data writing circuit of the memory circuit generates at least one of a command signal and a data signal according to the serial input signal. A power supply circuit of the memory circuit generates an operating voltage for a memory cell array to perform a data access operation. A data output stage circuit of the memory circuit outputs a readout data. A controller of the memory circuit performs a switching operation of an operating state of the memory circuit according to a change of the chip enable signal. The controller determines a disable or enable state of the data receiving stage circuit, the data writing circuit, the power supply circuit, and the data output stage circuit according to the operating state.

Abstract: A variable-frequency electric charge pump unit, a chip, and a communication terminal. The electric charge pump unit comprises a variable-frequency signal generator, an electric charge pump circuit, and a voltage detector connected in series. The variable-frequency signal generator outputs a clock signal for the electric charge pump circuit. The electric charge pump circuit generates an output voltage on the basis of the clock signal. The output voltage drives a load on the one hand and is connected to the voltage detector on the other hand. An output end of the voltage detector is connected to the variable-frequency signal generator. The working frequency of the variable-frequency signal generator can be adjusted dynamically on the basis of a requirement that a radiofrequency system work state has on the driving output of the electric charge pump unit.

Abstract: An apparatus that includes an interposer, first power connectors that are disposed on a first surface and that receive respective power inputs from one or more power sources, second power connectors that are disposed on the second surface and that receive a respective third power connector of an integrated circuit when the integrated circuit is mounted on the second surface of the interposer, a plurality of switches formed within the interposer, control circuitry formed within the interposer, and a sequencer circuit coupled to the control input of the control circuitry and that generates a different values for a control input signal that causes the control logic of the control circuitry to generate a corresponding set of switch signals, and the plurality of different values for the control input signal are generated according to a predefined sequence to provide power to the integrated circuit according to power up sequence.

Abstract: A semiconductor module, comprising: a module substrate with an electric connection element; at least one semiconductor package provided on the module substrate, the at least one semiconductor package including a plurality of semiconductor chips; and a connection region electrically connecting the semiconductor package to the module substrate, wherein the connection region comprises: a first region electrically connected between data signal terminals of a first chip of the semiconductor chips of the semiconductor package and the module substrate; a second region electrically connected between data signal terminals of a second chip of the semiconductor chips of the semiconductor package and the module substrate; and a third region electrically connected between command/address signal terminals of both the first and second chips of the semiconductor package and the module substrate, wherein the first region is closer to the electric connection element of the module substrate, compared with the third region.

Abstract: A charge pump circuit includes a voltage input port, a voltage output port, a plurality of charge pump units cascaded between the voltage input port and the voltage output port, a clock signal source, and N clock delay elements. The clock signal source generates a main clock signal and the N clock delay elements generate clock signals received by the charge pump units by delaying the main clock signal. The main clock signal received by the first charge pump unit has a rising edge leading a rising edge of the last clock signal received by the last charge pump unit, and a falling edge lagging the rising edge of the last clock signal. Each of the charge pump units includes two sets of inverters with delay elements for generating two complementary clock signals.

Abstract: A charge pump includes a first pumping capacitor configured to pump a first voltage of a first node, in response to a first clock signal, a gate pumping capacitor configured to pump a second voltage of a second node, in response to a second clock signal, a charge transfer transistor including a first source connected to a first one of a third node and the first node, a first gate connected to the second node, and a first drain connected to a remaining one of the first node and the third node, a gate control transistor including a second source connected to the first one of the third node and the first node, a second gate connected to the remaining one of the first node and the third node, and a second drain connected to the second node, and a gate discharge or charge unit.

Abstract: A voltage control device includes a first charge pump, a first power switch, a second charge pump, a second power switch, and a third power switch. The first charge pump generates a first application voltage according to the first system voltage. The first power switch has a first input terminal for receiving the first system voltage, a second input terminal for receiving the first application voltage, and an output terminal. The second charge pump generates a second application voltage according to a voltage received by the input terminal of the second charge pump. The second power switch has an input terminal for receiving the second application voltage, and an output terminal. The third power switch has a first input terminal coupled to the output terminal of the first charge pump, a second input terminal coupled to the output terminal of the second charge pump, and an output terminal.

Abstract: A memory circuit includes a memory cell, a first program driver, a second program driver, and a sensing amplifier. A method for operating the memory circuit includes, during a program operation of the memory cell, providing a program voltage to the memory cell, enabling the first program driver to drive the first local bit line to be at a low voltage, enabling the second program driver, disabling the first program driver, and enabling the sensing amplifier to verify whether the first memory cell has been programmed or not. The second program driver has a weaker driving ability than the first program driver.

Abstract: Methods for powering up a memory device, for example, are disclosed. One such memory device includes power up circuitry configured to receive an external power supply and to provide an internal power supply to the memory device upon receipt of a command. The power up circuitry may be configured to provide the internal power supply limited to a peak current, or may be configured to provide the internal power supply not limited to a peak current. The memory device may be, for example, a synchronous dynamic random access memory (SDRAM) device or Flash memory.

Abstract: A memory device may include one or more circuit boards. Additionally, memory circuitry and an energy storage device may be disposed on the one or more circuit boards. The energy storage device may supplant or supplement an external power source, for example, when power of the external power source is eliminated or insufficient.

Abstract: Embodiments of the disclosure provide a circuit structure for producing a full range biasing voltage including: a logic control node; first and second voltage generators, coupled to the logic control node, the first and second voltage generators configured to generate a positive voltage output at a positive voltage node and a negative voltage output at a negative voltage node; first and second multiplexer cells, coupled to the logic control node, configured to multiplex the positive voltage level received from the first or the second positive voltage node and the negative voltage level received from the first or the second negative voltage node to provide a multiplexed output; and an output node coupled to each of the first multiplexer cell and the second multiplexer cell configured to receive the multiplexed output to provide a biasing voltage range to at least one transistor having a back-gate terminal.

Abstract: A semiconductor memory device includes a power source pad, a first bank including a plurality of memory cells, a second bank including a plurality of memory cells, the first bank being sandwiched between the power source pad and the second bank, first power supply lines connected to the power source pad and supplying power to the first bank and not to the second bank, and second power supply lines connected to the power source pad, passing over the first bank, and supplying power to the second bank and not to the first bank.

Abstract: A semiconductor memory device includes a memory including a plurality of units, and a controller. Under control of the controller, a power for an operation of the memory is independently supplied to each of the plurality of units or is independently blocked with respect to each of the plurality of units. Each of the plurality of units may be one of a package, die, or chip. A supply of the power to at least a part of the plurality of units, to which the power is supplied, may be blocked under control of the controller. Accordingly, unnecessary power consumption may be prevented. Furthermore, power may be additionally supplied to at least a part of the plurality of units to which the power is not supplied, under control of the controller, and these units may be initialized.

Abstract: A power-supply device and an electronic device including the relate to technology for a data storage device. The electronic device includes a power-supply device and a controller. The power-supply device generates a sudden power loss (SPL) detection signal in a sudden power off (SPO) state by detecting a level of an external power, generates a charging sense signal indicative of a charging capacity of an auxiliary power-supply circuit, divides the charging capacity into a plurality of charging levels, detects a level of the charging capacity, and generates a charging sense signal indicating a charging level of the auxiliary power-supply circuit in response to the detected charging level. The controller stores flushing information in at least one non-volatile memory device when the SPL detection signal is activated, and variably adjust an amount of storage in the non-volatile memory device in response to the charging sense signal.

Abstract: An integrated circuit including a link or string of semiconductor memory cells, wherein each memory cell includes a floating body region for storing data. The link or string includes at least one contact configured to electrically connect the memory cells to at least one control line, and the number of contacts in the string or link is the same as or less than the number of memory cells in the string or link.

Abstract: A functional safety POR system requires implementing voltage detectors and supervisory functions in a complex SOC. These features are implemented within the SOC without external components. Three stages of voltage monitoring are implemented to ensure redundancy.

Abstract: A memory device and a control method thereof are provided. The memory device includes I memory blocks, I global power lines and I first local driver modules. Each memory block includes M gate control lines and a plurality of transistor units arranged in M rows. Gates of the transistor units in the m-th row are electrically connected to the m-th gate control line. The I global power lines are electrically connected to I pre-driver circuits and the I memory blocks, respectively. Each first local driver module is electrically connected to one global power line and one memory block. Each first local driver module includes M first local driver circuits. The m-th first local driver circuit is electrically connected to the m-th gate control line.

Abstract: Provided herein may be an internal voltage generation circuit and a memory device having the same. The internal voltage generation circuit may include an integration circuit configured to generate an initial voltage that increases with a constant slope based on an input voltage, a selection circuit configured to compare a feedback voltage with a reference voltage and then output the initial voltage or the reference voltage as an output voltage, and a first internal voltage generation circuit configured to generate an internal voltage by being supplied with an external supply voltage or by being blocked from being supplied with the external supply voltage based on a result of a comparison between the output voltage and the feedback voltage and to generate the feedback voltage by dividing the internal voltage.

Abstract: A chip includes a substrate; macros placed on the substrate, which has a placement region being divided into sub-regions according to locations of the macros; and one or more vertical power stripes (VPSs) disposed in each sub-region. At least one VPS is not aligned with the VPSs of an adjacent higher or lower sub-region.

Abstract: According to one embodiment, a voltage generation circuit includes a first boost circuit, a voltage division circuit, a first detection circuit, capacitor and a first switch. The first boost circuit outputs a first voltage. The voltage division circuit divides the first voltage. The first detection circuit is configured to detect a first monitor voltage supplied to the first input terminal, based on a reference voltage which is supplied to a second input terminal of the first detection circuit, and to control an operation of the first boost circuit. The capacitor is connected between an output terminal of the first boost circuit and the first input terminal of the first detection circuit. The first switch cuts off a connection between the capacitor and the first detection circuit, based on an output signal of the first detection circuit, until the first voltage is output from the first boost circuit.

Abstract: A memory device includes control line drivers coupled to respective pairs of reference supply voltage controllers and supply voltage controllers. The control line drivers are configured to apply control signals to the reference supply voltage controllers and the supply voltage controllers. For a read operation, the reference supply voltage controllers apply a first voltage to reference voltage supply nodes of un-accessed rows of the array of memory cells and a second voltage to accessed rows. A voltage level of the first voltage is greater than a voltage level of the second voltage. For a write operation, the supply voltage controllers apply a third voltage to un-accessed rows of the array of memory cells and a fourth voltage to accessed rows. A voltage level of the third voltage is greater than a voltage level of the fourth voltage.

Abstract: A method includes identifying the first path as a target path, wherein an operation speed of the target path is adjusted from the corner case; deriving and outputting first values from the lookup table by indexing the lookup table with a threshold voltage associated with the first path identified as the target path as the main threshold voltage and a threshold voltage associated with the second path as the slave threshold voltage; calculating a first extra time based on the first values and first cell delays associated with the first path.

Abstract: Examples relate to providing throttled data memory access. In some examples, a locking mechanism is used to activate a corresponding memory lock after receiving a first read access cycle. While the corresponding memory lock is active, responses to subsequent read access cycles are prevented. After the corresponding memory lock deactivates, a second read access cycle is responded to with access to the memory.

Abstract: A storage device may include: a protocol processing unit suitable for communicating with a host based on a predetermined protocol, and transferring a response signal to at least one status request signal that is received from the host; a power management unit suitable for supplying a power source voltage, and outputting a detection signal which represents a low voltage detection status where the power source voltage has a voltage level lower than a predetermined voltage level; and a core unit suitable for blocking a transfer of the response signal by the protocol processing unit in response to the detection signal, and processing at least one task request which is received from the host through the protocol processing unit after the blocking.

Abstract: Methods, systems, and apparatuses related to memory operation with multiple sets of latencies are disclosed. A memory device or system that includes a memory device may be operable with one or several sets of latencies (e.g., read, write, or write recovery latencies), and the memory device or system may apply a set of latencies depending on which features of the memory device are enabled. For example, control circuitry may be configured to enable one or more features during operations on a memory array, and the control circuitry may apply a set of latency values based on a number or type of features that are enabled. The sets of latency values may depend, for example, on whether various control features (e.g., dynamic voltage frequency scaling) are enabled, and a device may operate within certain frequency ranges irrespective of other characteristics (e.g., mode register values) or latencies applied.

Abstract: Disclosed herein is an apparatus that includes a first wiring layer including a first power line extending in a first direction, a second wiring layer including second and third power lines extending in a second direction, a third wiring layer including power electrode patterns arranged in the second direction, and a fourth wiring layer including a fourth power line extending in the second direction. The first and second power lines are connected by a first via electrode. The first and third power lines are connected by a second via electrode. The second power line and each of the power electrode patterns are connected by a third via electrode. The third power line and each of the power electrode patterns are connected by a fourth via electrode. The fourth power line and each of the power electrode patterns are connected by a fifth via electrode.

Abstract: A programmable-threshold power supply selector has two power-supply inputs VDD1 and VDD2. The higher of these two voltages is pre-selected as a common supply that powers all transistors and circuitry in the programmable-threshold power supply selector, including substrates under transistors. An open-loop decision circuit is very stable since it uses no feedback. A tunable voltage divider divides VDD1 by a programmable divisor. The divided VDD1 is compared to a reference voltage to generate switch-control signals. The switch-control signals drive the gates of p-channel switch transistors that connect either VDD1 or VDD2 to an output supply voltage. The different programmable divisor values effectively cause VDD1 to be compared to a programmable threshold voltage VTH. The switch transistors switch the output supply voltage to VDD2 only when VDD1 falls below VTH. The output supply voltage remains at VDD1 even when VDD1 falls below VDD2, eliminating unnecessary power switching.

Abstract: A packaged sensor having three external electrical terminals. The packaged sensor comprises a package housing, a power input terminal, a ground terminal, a sensing device, a sensor output terminal for providing an output signal that is related to a physical quantity sensed by the sensing device when the packaged sensor is operated in a sensing mode of operation and for providing a data readout signal related to stored data when the packaged sensor is operated in a data readout mode of operation, a sensing block coupled to the sensing device and to the sensor output terminal, and an adjustment block coupled to the power input terminal, coupled to the sensing block, coupled to the sensor output terminal, comprising a memory storing the stored data, and operable to modulate the data readout signal onto the sensor output terminal in response to a data readout command modulated onto the power input terminal.

Abstract: A dual-power-domain SRAM is disclosed in which the dual power domains may be powered up or down in whatever order is desired. For example, a (CX) power domain may be powered up first, followed by a memory (MX) power domain. Conversely, the MX power domain may be powered up prior to the CX domain.

Abstract: A power supply circuit includes a first comparator, a second comparator, a first voltage regulator, an output terminal, a first path and a second path. The first comparator compares a first input voltage with a first reference voltage to generate a first control signal. The second comparator compares a second input voltage with the first reference voltage to generate a second control signal. A voltage level of the second input voltage is different from a voltage level of the first input voltage. The first voltage regulator is selectively enabled based on the first control signal and the second control signal, and generates a first voltage based on the first input voltage. A voltage level of the first voltage is substantially the same as the voltage level of the second input voltage. The output terminal is configured to output one of the second input voltage and the first voltage as a power supply voltage. The first path directly provides the first input voltage to the first voltage regulator.

Abstract: An object of the present invention is to provide a semiconductor device amplifying input voltages of various standards across a wide range. According to an embodiment, a semiconductor device includes a first differential amplifier that performs an amplifying operation in a first voltage range, a second differential amplifier that performs an amplifying operation in a second voltage range, a first protection unit that conducts between the source and the drain of each pair of differential transistors included in the first and second differential amplifiers in a third voltage range, a third differential amplifier that performs an amplifying operation in a fourth voltage range, a fourth differential amplifier that performs an amplifying operation in a fifth voltage range, and a second protection unit that conducts between the source and the drain of each pair of differential transistors included in the third and fourth differential amplifiers in a sixth voltage range.

Abstract: The present disclosure includes apparatuses and methods for providing power availability information to memory. A number of embodiments include a memory and a controller. The controller is configured to provide power and power availability information to the memory, and the memory is configured to determine whether to adjust its operation based, at least in part, on the power availability information.

Abstract: A memory module includes semiconductor memory devices, a power management integrated circuit (PMIC), and a control device. The semiconductor memory devices, mounted on a circuit board, operate based on a power supply voltage. The PMIC, mounted on the circuit board, generates the power supply voltage, provides the power supply voltage to the semiconductor memory devices, and stores a trimming control code associated with a minimum level of the power supply voltage when the semiconductor memory devices operate normally in a test mode. During the test mode, the PMIC adjusts a level of the power supply voltage, tests the semiconductor memory devices using the adjusted power supply voltage, and stores the trimming control code based on a result of the test. The control device controls the PMIC based on a first control signal received from an external device.

Abstract: The present disclosure includes apparatuses and methods for providing power availability information to memory. A number of embodiments include a memory and a controller. The controller is configured to provide power and power availability information to the memory, and the memory is configured to determine whether to adjust its operation based, at least in part, on the power availability information.

Abstract: Scheduling memory accesses in a memory system having a multiple ranks of memory, at most r ranks of which may be powered up concurrently, in which r is less than the number of ranks. If fewer than r ranks are powered up, a subset of requested powered down ranks is powered up, such that at r ranks are powered up, the subset of requested powered down ranks to be powered up including the most frequently accessed requested powered down ranks. Then, if fewer than r ranks are powered up, a subset of unrequested powered down ranks is powered up, such that a total of at most r ranks is powered up concurrently, the subset of unrequested powered down ranks to be powered up including the most frequently accessed unrequested powered down ranks.

Abstract: Embodiments of the present invention provide systems and methods for re-balancing the stability of a SRAM cell. Embodiments of the present invention identify SRAM cells with negative voltage threshold margins and write a “zero” state bit with in the bi-stable flip-flop of the SRAM. Raising the voltage of the CMOS set containing the “zero” state bit and selective transistor biasing, skews the “zero” state bit towards the complementary “one” state bit. This induces an increase voltage thresholds of the identified SRAM cells.

Abstract: A non-volatile memory system goes into a low-power standby sleep mode to reduce power consumption if a host command is not received within delay period. The duration of this delay period is adjustable. In one set of embodiments, host commands can specify the delay value, the operation types to which it applies, and whether the value is power the current power session or to be used to reset a default value as well. In other aspects, the parameters related to the delay value are kept in a host resettable parameter file. In other embodiments, the memory system monitors the time between host commands and adjusts this delay automatically.

Abstract: The present embodiment discloses a semiconductor memory device which includes a memory cell array, a signal pad, a first voltage pad, a first regulation circuit and a first operation circuit. The signal pad supplies an output signal associated with the memory cell array. The first voltage pad receives a first voltage. The first regulation circuit regulates a signal output from the signal pad. The first operation circuit operates the first regulation circuit. The first regulation circuit and the first operation circuit are provided between the signal pad and the first voltage pad.

Abstract: An SRAM facility adapted to power an address path using a first developed supply voltage and to power a data path using a second developed supply voltage, the first and second developed power supplies being separate, distinct, and different. The SRAM facility includes a power supply facility or a voltage supply facility adapted to develop the first and second supply voltages.

Abstract: Embodiments of the present invention provide systems and methods for re-balancing the stability of a SRAM cell. Embodiments of the present invention identify SRAM cells with negative voltage threshold margins and write a “zero” state bit with in the bi-stable flip-flop of the SRAM. Raising the voltage of the CMOS set containing the “zero” state bit and selective transistor biasing, skews the “zero” state bit towards the complementary “one” state bit. This induces an increase voltage thresholds of the identified SRAM cells.

Abstract: The disclosure describes approaches for generating a physically unclonable function (PUF) value. Power is applied to a power control circuit, an SRAM, and a PUF control circuit. After initially powering-up the SRAM, the PUF control circuit signals the power control circuit to disable power to the SRAM. The power control circuit disables power to the SRAM, and then re-enables power to the SRAM after having power to the SRAM disabled for a waiting period. The PUF control circuit reads a PUF value from the SRAM by the PUF control circuit after the enabling of power.