Abstract: An InGaN-based resonant cavity enhanced detector chip based on porous DBR, including: a substrate (10); a buffer layer (11) formed on the substrate (10); a bottom porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the bottom porous DBR layer (12), wherein one side of the n-type GaN layer (13) is recessed downward to form a mesa (13?), and the other side of the n-type GaN layer (13) is protruded; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a sidewall passivation layer (20) formed on an upper surface of the p-type GaN layer (15) and sidewalls of the protruded n-type GaN layer (13), the active region (14), and the p-type GaN layer (15), wherein the sidewall passivation layer (20) on the upper surface of the p-type GaN layer (15) has a window in a middle; a transparent conductive layer (16) formed on the sidewall passivation layer (20) and the p-type GaN layer (15) at the window; an n-type electrode (18

Abstract: A wavelength tunable laser includes: a heating layer, a dielectric layer, reflectors, a transport layer, a support layer, and a substrate layer. The heating layer is located above the transport layer; the transport layer is located above the support layer, and the transport layer includes an upper cladding layer, a waveguide layer, and a lower cladding layer from top to bottom; the reflector is located in the transport layer; the support layer has a protection structure, where the protection structure forms a hollow structure together with the transport layer and the substrate layer, and the hollow structure has a support structure; and the substrate layer is located below the support layer. The heating layer, the reflector, and a part of the transport layer form a suspended structure to prevent heat dissipation. Thus thermal tuning efficiency can be improved, and power consumption can be lowered.

Abstract: A light-emitting element includes at least a GaN substrate 11; a first light reflecting layer 41 formed on the GaN substrate 11 and functioning as a selective growth mask layer 44; a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 that are formed on the first light reflecting layer; and a second electrode 32 and a second light reflecting layer 42 that are formed on the second compound semiconductor layer 22. An off angle of the plane orientation of the surface of the GaN substrate 11 is 0.4 degrees or less, the area of the first light reflecting layer 41 is 0.8S0 or less, where S0 represents the area of the GaN substrate 11, and as a bottom layer 41A of the first light reflecting layer, a thermal expansion relaxation film 44 is formed on the GaN substrate 11.

Abstract: An optical device includes a gallium and nitrogen containing substrate having a surface region and an optical blocking region of InAlN material overlying the surface region. A strain control region maintain quantum wells within a predetermined strain state. The strained region is preferably a confined heterostructure.

Abstract: Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide which couples the laser output to a silicon waveguide.

Abstract: A surface emitting laser according to the present invention includes a lower reflector, a first spacer layer, an active layer, a second spacer layer composed of a semiconductor material, a gap section formed of at least one of vacuum and gas, and an upper reflector in the written order, and also includes a control mechanism that changes a distance between an interface between the second spacer layer and the gap section and an interface between the upper reflector and the gap section. An optical path length neff×d extending from an interface between the lower reflector and the first spacer layer to an interface between the second spacer layer and the gap section satisfies a predetermined relationship.

Abstract: A broad stripe laser (1) comprising an epitaxial layer stack (2), which contains an active, radiation-generating layer (21) and has a top side (22) and an underside (23). The layer stack (2) has trenches (3) in which at least one layer of the layer stack (2) is at least partly removed and which lead from the top side (22) in the direction of the underside (23). The layer stack (2) has on the top side ridges (4) each adjoining the trenches (3), such that the layer stack (2) is embodied in striped fashion on the top side. The ridges (4) and the trenches (3) respectively have a width (d1, d2) of at most 20 ?m.

Abstract: A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.

Abstract: A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B.

Abstract: A vertical cavity surface emitting laser includes a cavity formed by a pair of reflectors on a substrate and an active region interposed in the cavity. In the vertical cavity surface emitting laser, at least one of the reflectors that form the cavity has a refractive index periodic structure produced by arranging a first medium and a second medium so as to make the refractive index change periodically in in-plane directions of the substrate and the cross sectional area of the first medium in the in-plane directions changes in the direction of the thickness of the first medium. The vertical cavity surface emitting laser has reflectors having a wide reflection band.

Abstract: An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.

Abstract: A laser diode includes an active layer, a strip-shaped ridge provided above the active layer, a pair of resonator end faces sandwiching the active layer and the ridge from an extending direction of the ridge, and an upland section provided being contacted with both side faces of the ridge in at least one of the resonator end faces of the pair of resonator end face and in the vicinity thereof. A thickness from the active layer to a surface of the upland section is larger on the resonator end face side and is smaller on a central side of the ridge, and the thickness is continuously changed from a thick portion on the resonator end face side to a thin portion on the central side of the ridge.

Abstract: An optical semiconductor device has a semiconductor substrate, a semiconductor region and heater. The semiconductor region has a stripe shape demarcated with a top face and a side face thereof. The stripe shape has a width smaller than a width of the semiconductor substrate. An optical waveguide layer is located in the semiconductor region. A distance from a lower end of the side face of the semiconductor region to the optical waveguide layer is more than half of the width of the semiconductor region. The heater is provided above the optical waveguide layer.

Abstract: A semiconductor light-emitting device includes an n-type cladding layer formed on a substrate, an active layer formed on the n-type cladding layer and including a well layer and a barrier layer, and a p-type cladding layer formed on the active layer. The well layer is made of an indium-containing nitride semiconductor, and has a hydrogen concentration greater than that of the n-type cladding layer and less than that of the p-type cladding layer.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide direction, and a current blocking layer formed on sides of the ridge. The ridge is disposed to separate the substrate into a first region having a first width, and a second region having a second width greater than the first width, in a direction perpendicular to the optical waveguide direction. The second-conductivity type layer has a shock attenuating portion having a height greater than or equal to that of the ridge, on sides of the ridge. In the second region, a trench extending from an upper surface of the shock attenuating portion, penetrating at least the active layer, and reaching the first-conductivity type layer, is formed along the optical waveguide direction.

Abstract: A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.

Abstract: A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and waveguide layer is formed of a conductive material and such that it has a recess therein and over the injection region. Air filling the region together with appropriate choice of material for the non-epitaxial contact and waveguide layer creates desired lateral waveguiding. Metallic silver in one choice for this material. The recess may also be filled with a low-loss material having a refractive index higher than that of the material forming the non-epitaxial contact and waveguide layer. Transparent conductive oxides (e.g., indium tin oxide (ITO), zinc oxide (ZnO), etc.), appropriate metal (e.g., gold), or a composite comprising a conductive oxide and a metal, provide low absorption in the UV and near-IR wavelengths of interest, and are thus good candidate materials for within the recess.

Abstract: When configuring a surface emitting laser by a semiconductor material not capable of largely extracting a refractive-index difference, the surface emitting laser using a photonic crystal capable of forming a waveguide is provided.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and waveguide layer is formed of a conductive material and such that it has a recess therein and over the injection region. Air filling the region together with appropriate choice of material for the non-epitaxial contact and waveguide layer creates desired lateral waveguiding. Metallic silver in one choice for this material. The recess may also be filled with a low-loss material having a refractive index higher than that of the material forming the non-epitaxial contact and waveguide layer. Transparent conductive oxides (e.g., indium tin oxide (ITO), zinc oxide (ZnO), etc.), appropriate metal (e.g., gold), or a composite comprising a conductive oxide and a metal, provide low absorption in the UV and near-IR wavelengths of interest, and are thus good candidate materials for within the recess.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: Injection radiators are used for pumping solid-state and fiber lasers and amplifiers used for producing medical devices, laser production equipment, lasers generating a double-frequency radiation and in the form of highly efficient general-purpose solid-state radiation sources used in a given waveband, including white light emitters used for illumination. Said invention also relates to superpower highly-efficient and reliable injection surface-emitting lasers, which generate radiation in the form of a plurality of output beams and which are characterised by a novel original and efficient method for emitting the radiation through the external surfaces thereof.

Abstract: A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.

Abstract: When configuring a surface emitting laser by a semiconductor material not capable of largely extracting a refractive-index difference, the surface emitting laser using a photonic crystal capable of forming a waveguide is provided.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: The two-dimensional photonic crystal surface emitting laser according to the present invention includes a number of main modified refractive index areas periodically provided in a two-dimensional photonic crystal and secondary structures each relatively located in a similar manner to each of the main modified refractive index areas. The location of the secondary structure is determined so that a main reflected light which is reflected by a main modified refractive index area and a secondary reflected light which is reflected by a secondary structure are weakened or intensified by interference.

Abstract: A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.

Abstract: A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.

Abstract: Disclosed is a semiconductor laser. The semiconductor laser includes a semiconductor chip that includes an active layer and emits radiation in a main radiating direction. The active layer is structured in a direction perpendicular to the main radiating direction to reduce heating of the semiconductor chip by spontaneously emitted radiation. The active layer includes a region provided for optical pumping by a pump radiation source. The optically pumped region of the active layer is surrounded by a region having, in a direction perpendicular to the main radiating direction, a periodic structure that forms a photonic crystal in which radiation having the emission wavelength is not capable of propagation.

Abstract: A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

Abstract: A surface emitting laser having a substrate with top and bottom surfaces; a first stack of mirror layers of alternating indices of refraction located upon the top surface of the substrate; and active layer disposed over the first stack; a second stack of mirror layers of alternating indices of refraction disposed over the active layer and a recessed portion located centrally in the second stack extending through at least some of the second stack of mirror layers for improving the spectral width characteristic of the laser.

Abstract: A phase array of oxide confined VCSELs and a method for forming the phase array of oxide confined VCSELs is described. VCSELs in the array are designed to be simultaneously addressed such that the output of multiple VCSELs can be used to increase the light intensity at a point. In applications where beam coherence from the VCSEL array is desirable, high gain coupling regions break the continuity of the oxide wall surrounding each VCSEL aperture. The high gain coupling regions connect adjacent VCSELs in the VCSEL array thereby allowing mode coupling between adjacent lasers and the output of a coherent beam of light.

Abstract: A single mode high power vertical cavity surface emitting laser (VCSEL) using photonic crystals. A photonic crystal is included in at least one mirror layer of a VCSEL. The reflectivity of the photonic crystal is dependent on the wavelength and incident angle of the photons. The photonic crystal can be formed such that the VCSEL lases at a single mode. Because a single mode is generated, the aperture of the VCSEL can be enlarged to increase the power that is generated by the VCSEL for that mode. The photonic crystal can be used with or without DBR layers. The photonic crystal, in one example, forms an external cavity.

Abstract: Anti-reflective coatings may be used on laser high index gain media to mitigate reflection. An absentee layer may be used to compliment the antireflective coating to improve its antireflective performance over a broader range of wavelengths. The absentee layer comprises a material having a higher index of refraction than that of the gain media and has a thickness corresponding to multiple halfwave thicknesses related to the center wavelength output by the laser.

Abstract: The present invention creates oxide and air apertures in material systems, such as InP, that do not usually accommodate epitaxial incorporation of highly oxidizing materials, such as AlAs, of sufficient thickness to adequately provide optical as well as current aperturing. A composite structure of relatively slowly oxidizing layer or layers (e.g. AlInAs on InP) with a faster-oxidizing layer or layers (e.g. AlAs on InP) can be used to produce oxide and air apertures of various shapes and sizes, and to also increase the oxidation rate.

Abstract: An edge emitting laser with circular beam using a low-carrier-mobility diluted nitride semiconductor material for an epitaxy light-emitting layer is disclosed. The low-carrier-mobility material can greatly suppress surface recombination of carriers. The epitaxy structure established on the substrate surface includes, from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed from a diluted nitride material. Etching is performed from the epitaxy structure through the light-emitting layer, forming a ridge waveguide that has a large reflective index difference between the light-emitting layer and the dielectric passivation layer.

Abstract: A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.

Abstract: A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.