With Diffraction Grating (bragg Reflector) Patents (Class 372/50.11)
  • Patent number: 10033158
    Abstract: A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first Bragg mirror and a second Bragg mirror so that the second Bragg mirror is further away from the carrier than the first Bragg mirror; a semiconductor layer sequence between the first and the second Bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first Bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: July 24, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Roland Enzmann, Hubert Halbritter, Martin Rudolf Behringer
  • Patent number: 10014660
    Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: July 3, 2018
    Assignees: Commisariat A L'Energie Atomique et aux Energies Alternatives, STMICROELECTRONICS SA, STMICROELECTRONICS (CROLLES 2) SAS
    Inventors: Thomas Ferrotti, Badhise Ben Bakir, Alain Chantre, Sebastien Cremer, Helene Duprez
  • Patent number: 9997890
    Abstract: A multisection digital supermode-distributed Bragg reflector (MSDS-DBR) comprising: a plurality P of digital supermode Bragg reflector (DS-DBR) grating sections arranged along a waveguide; wherein each DS-DBR grating section is configured to pass or reflect light over a given spectral region, the given spectral region being different from the spectral regions of the other DS-DBR grating sections; wherein each DS-DBR grating section comprises a plurality M of grating sub-regions, each sub-region corresponding to a spectral sub-band within the spectral region of the DS-DBR grating section, and wherein each grating sub-region includes a positive electrical contact and a negative electrical contact; said grating sub-region being configured to pass or reflect light of its spectral sub-band when an electrical bias is provided between its positive and negative electrical contacts.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: June 12, 2018
    Assignee: Rockley Photonics Limited
    Inventor: Aaron John Zilkie
  • Patent number: 9917417
    Abstract: A widely tunable laser system includes a substrate, first and second lasers, an output and at least one optical combining device. The first laser is integrated with the substrate, includes a gain medium that includes a first material, and emits light at a wavelength that is tunable within a first wavelength range that is determined at least in part by the first material. The second laser is integrated with the substrate, includes a gain medium that includes a second material, and emits light at a wavelength that is tunable within a second wavelength range that is different from the first wavelength range that is determined at least in part by the second material. The at least one optical combining device is configured to direct light from one or both of the first laser and the second laser to the output.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: March 13, 2018
    Assignee: Skorpios Technologies, Inc.
    Inventors: Guoliang Li, Stephen B. Krasulick, Damien Lambert
  • Patent number: 9893816
    Abstract: Apparatuses including integrated circuit (IC) optical assemblies and processes for operation of IC optical assemblies are disclosed herein. In some embodiments, the IC optical assemblies include a transmitter component to provide light output having a particular beam direction, and a transmitter driver component. The transmitter component includes a light source optically coupled to a plurality of waveguides, a plurality of gratings, and a plurality of phase tuners. The transmitter driver component causes a light provided by the light source to be centered at a particular wavelength and a particular phase to be induced by each phase tuner of the plurality of phase tuners on a respective waveguide of the plurality of waveguides, in accordance with a feedback signal, to generate the light output having the particular beam direction.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: February 13, 2018
    Assignee: Intel Corporation
    Inventors: Woosung Kim, Myung Jin Yim
  • Patent number: 9871344
    Abstract: A tunable laser for tuning a lasing mode based on light beams travelling through at least one block of channel waveguides with at least two tunable combs, includes: a frequency selective optical multiplexer comprising a first terminal for receiving/transmitting light, at least one block of channel waveguides, each channel waveguide having a reflectively coated first tail and a second tail, and an optical coupling element optically coupling the first terminal with the second tails of the channel waveguides of the at least one block of channel waveguides, each of the channel waveguides having a different length; a gain element generating a broad spectrum of light, the gain element coupling the first terminal of the frequency selective optical multiplexer with a reflective element.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: January 16, 2018
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Ramsey Selim, Karl Boylan, Richard Wyatt, Ian Lealman
  • Patent number: 9819145
    Abstract: According to various embodiments, there is provided a layer arrangement including a graphene layer; a gating electrode layer configured to provide a tuning voltage to the graphene layer; a laser layer configured to provide an electromagnetic wave; and a concentric-circular grating layer configured to couple the electromagnetic wave to the graphene layer.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: November 14, 2017
    Assignee: Nanyang Technological University
    Inventors: Guozhen Liang, Qijie Wang
  • Patent number: 9800021
    Abstract: A semiconductor laser device having a diffraction grating is disclosed. The semiconductor laser device comprises a first diffraction grating provided on a substrate, a second diffraction grating continuous to one end of the first diffraction grating along an optical waveguide direction, and an active layer provided above the first diffraction grating. The second diffraction grating has a pitch 1.05 times or greater, or 0.95 times or smaller of the pitch of the first diffraction grating.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: October 24, 2017
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Masami Ishiura
  • Patent number: 9793454
    Abstract: This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.
    Type: Grant
    Filed: January 11, 2016
    Date of Patent: October 17, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Fu Huang, Shiuan-Leh Lin, Chih-Chiang Lu, Chia-Liang Hsu
  • Patent number: 9786238
    Abstract: According to the array substrate provided by this disclosure, in a row of sub-pixels, sub-pixels in the odd columns and even columns are separately coupled to different gate lines, i.e., making the sub-pixels coupled to the same gate line are not adjacent to each other. In this way, during row scanning drive, an up-down twist charging may be implemented, and the sub-pixels cause no interference to each other.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: October 10, 2017
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yoonsung Um, Heecheol Kim, Yunsik Im
  • Patent number: 9774168
    Abstract: A quantum cascade semiconductor laser includes a substrate with a main surface including a waveguide area and a distributed Bragg reflection area that are arranged in a direction of a first axis; a laser region provided on the waveguide area, the laser region including a mesa waveguide having first and second side surfaces, and first and second burying regions provided on the first and second side surfaces, respectively; a distributed Bragg reflection region provided on the distributed Bragg reflection area, the distributed Bragg reflection region including a semiconductor wall having first bulk semiconductor regions and first laminate regions that are alternately arrayed in a direction of a second axis intersecting the first axis; and an upper electrode provided on the laser region. Each first bulk semiconductor region includes a bulk semiconductor layer. Each first laminate region includes a stacked semiconductor layer having a plurality of semiconductor layers.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: September 26, 2017
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 9742151
    Abstract: A terahertz quantum cascade laser device is provided comprising a substrate having a top substrate surface, a bottom substrate surface, and an exit facet extending between the top substrate surface and the bottom substrate surface at an angle ?tap. The device comprises a waveguide structure having a top surface, a bottom surface, a front facet extending between the top surface and the bottom surface and positioned proximate to the exit facet, and a back facet extending between the top surface and the bottom surface and oppositely facing the front facet. The waveguide structure comprises a quantum cascade laser structure configured to generate light comprising light of a first frequency ?1, light of a second frequency ?2, and light of a third frequency ?THz, wherein ?THz=?1??2; an upper cladding layer; and a lower cladding layer.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: August 22, 2017
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Dan Botez, Christopher A. Sigler, Thomas L. Earles, Jeremy D. Kirch
  • Patent number: 9685766
    Abstract: Disclosed is a method of forming a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 ?m. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum-cascade core positioned on a substrate for emitting within the range from 3-14 ?m and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: June 20, 2017
    Assignee: Thorlabs Quantum Electronics, Inc.
    Inventors: Catherine Genevieve Caneau, Feng Xie, Chung-En Zah
  • Patent number: 9627851
    Abstract: A multisection digital supermode-distributed Bragg reflector (MSDS-DBR) comprising: a plurality P of digital supermode Bragg reflector (DS-DBR) grating sections arranged along a waveguide; wherein each DS-DBR grating section is configured to pass or reflect light over a given spectral region, the given spectral region being different from the spectral regions of the other DS-DBR grating sections; wherein each DS-DBR grating section comprises a plurality M of grating sub-regions, each sub-region corresponding to a spectral sub-band within the spectral region of the DS-DBR grating section, and wherein each grating sub-region includes a positive electrical contact and a negative electrical contact; said grating sub-region being configured to pass or reflect light of its spectral sub-band when an electrical bias is provided between its positive and negative electrical contacts.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: April 18, 2017
    Assignee: Rockley Photonics Limited
    Inventor: Aaron Zilkie
  • Patent number: 9601901
    Abstract: Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: March 21, 2017
    Assignee: THORLABS QUANTUM ELECTRONICS, INC.
    Inventors: Catherine Genevieve Caneau, Feng Xie, Chung-En Zah
  • Patent number: 9583914
    Abstract: A semiconductor laser element is realized with high beam quality (index M2<1). A diffraction grating 6ba of a diffraction grating layer 6 extends along a principal surface 2a and is provided on a p-side surface 6a of the diffraction grating layer 6; the refractive index of the diffraction grating layer 6 periodically varies in directions extending along the principal surface 2a, in the diffraction grating 6ba; the diffraction grating 6ba has a plurality of holes 6b; the plurality of holes 6b are provided in the p-side surface 6a and arranged in translational symmetry along a square lattice R3; the plurality of holes 6b each have the same size and shape; each hole 6b corresponds to a lattice point of the diffraction grating 6ba and is of a triangular prism shape; a shape of a bottom face 6c of the hole 6b is an approximate right triangle.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 28, 2017
    Assignees: Kyoto University, HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Akiyoshi Watanabe, Yoshitaka Kurosaka, Takahiro Sugiyama, Susumu Noda
  • Patent number: 9577142
    Abstract: A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: February 21, 2017
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Masami Ishiura
  • Patent number: 9559494
    Abstract: An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: January 31, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christian Lauer, Alvaro Gomez-Iglesias
  • Patent number: 9543737
    Abstract: A method and apparatus for calibrating and controlling tunable lasers are disclosed. Multiple methodologies disclosed herein may be used, alone or in combination, which significantly speed up a calibration time and thus provide a significant advantage over existing technology in calibrating the tunable lasers. Certain methodologies benefit from a unique design of the tunable lasers that couple two or more optical facets to an output. The tunable lasers may be equipped with two or more sampled grating distributed Bragg reflector (SGDBR) mirrors and may include Semiconductor Optical Amplifiers (SOAs) after the SGDBR mirrors.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: January 10, 2017
    Assignee: OE SOLUTIONS AMERICA, INC.
    Inventors: Daniel Blumenthal, Holger Klein, Chad Althouse, Todd Chicci, Patrick Bybee, Henrik Poulsen, Sarat Chandra Gundavarapu
  • Patent number: 9525268
    Abstract: A quantum cascade laser includes a substrate having a principal surface including first and second regions arranged along a first axis; a laser structure disposed on the principal surface in the second region, the laser structure having an end facet intersecting the first axis, the laser structure including a stripe-shaped stacked semiconductor layer extending along the first axis; and a distributed Bragg reflection structure disposed on the principal surface in the first region, the distributed Bragg reflection structure including a semiconductor wall made of a single semiconductor material, the distributed Bragg reflection structure being optically coupled to the end facet of the laser structure. The semiconductor wall has first and second side surfaces that intersect the first axis and extend along a second axis intersecting the principal surface. The semiconductor wall is located away from the end facet of the laser structure.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: December 20, 2016
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 9444221
    Abstract: A laser apparatus for tuning the emission wavelength of a wavelength tunable laser diode will be described. The apparatus includes a tunable LD with heaters to tune the emission wavelength of the tunable LD, and a controller to control the power supplied to the heaters. A feature of the laser apparatus is that the controller supplies pre-emphasis power to the heaters before the supplement of the power corresponding to the re-tuned emission wavelength to accelerate the stability of the temperature of the heaters.
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: September 13, 2016
    Assignees: Sumitomo Electric Industries, Ltd., National Institute of Advanced Industrial Science and Technology
    Inventors: Katsumi Uesaka, Eiichi Banno, Hajime Shoji, Hiroyuki Matsuura, Haruhiko Kuwatsuka, Ken Tanizawa, Shu Namiki
  • Patent number: 9438003
    Abstract: A solid-state laser arrangement includes a plate-like solid body including a laser-active medium, a heat sink, a layer of adhesive between a carrier face of the heat sink and the plate-like solid body, and a reflective coating on a side of the plate-like solid body facing the adhesive layer, in which the adhesive layer is completely shielded from radiation from the plate-like solid body by a radiation-impermeable region between the side of the plate-like solid body facing the adhesive layer and the carrier face of the heat sink.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: September 6, 2016
    Assignee: TRUMPF LASER GMBH
    Inventors: Sven-Silvius Schad, Elke Dolores Kaiser
  • Patent number: 9436022
    Abstract: A modulated light source includes: a reflective film which is formed at one end of an optical amplifier; a light wavelength filter which has band-pass characteristics and modulates a transmission center wavelength; a light reflection mechanism which feeds back light having passed through the light wavelength filter to the optical amplifier and an optical resonator is formed between which and the reflective film; and a wavelength adjustment mechanism which adjusts the transmission center wavelength to coincide with a specific oscillation wavelength when light oscillation selectively occurs at the specific oscillation wavelength depending on the band-pass characteristics of the light wavelength filter.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: September 6, 2016
    Assignee: FUJITSU LIMITED
    Inventor: Tomoyuki Akiyama
  • Patent number: 9397474
    Abstract: A method for manufacturing a semiconductor device includes forming a lower light confinement layer on a substrate, a light absorption layer on the lower light confinement layer, and an upper light confinement layer on the light absorption layer; and removing parts of these layers to form an optical modulator, forming a laser section having a diffraction grating in a portion of the substrate where the optical modulator is not present, forming a diffusion constraining layer, which constrains diffusion of a dopant, on the upper light confinement layer, and forming a contact layer on the laser section and the diffusion constraining layer. The same dopant is present in the contact layer and the upper light confinement layer.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: July 19, 2016
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Daisuke Morita, Hiroyuki Kawahara, Shinji Kimura
  • Patent number: 9356428
    Abstract: A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector, a plurality of active layers causing a gain by current injection, and an upper reflector are provided on a substrate, includes an n-type spacer layer formed between the lower reflector and an active layer closest to the lower reflector in the plurality of active layers, a p-type spacer layer formed between the upper reflector and an active layer closest to the upper reflector in the plurality of active layers, and an intermediate layer arranged between the plurality of active layers. The intermediate layer is configured from an Mg-doped layer including at least Mg, and a nitride semiconductor layer including In, and the Mg-doped layer and the nitride semiconductor layer including In are provided in that order from a side of the substrate.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: May 31, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takeshi Kawashima
  • Patent number: 9318872
    Abstract: A VCSEL can include a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region. The VCSEL can also include a graphene electrode electronically coupled with at least one graphene region. The VCSEL can also include a contact region adjacent with at least one dielectric region. The VCSEL can also include a contact electrode electronically coupled with the contact region. The VCSEL can also include a base electrode electronically coupled with a base of a semiconductor region of the VCSEL. The graphene intra-cavity absorber can include at least two graphene regions sandwiching at least one dielectric region therebetween.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: April 19, 2016
    Assignee: FINISAR CORPORATION
    Inventors: Luke A. Graham, Ralph H. Johnson, James K. Guenter
  • Patent number: 9312444
    Abstract: A semiconductor light emitting device includes a supporting substrate, a light emitting layer including a nitride semiconductor, and a nitride multilayer film. The nitride multilayer film includes a first layer including a first nitride semiconductor containing aluminum nitride, a second layer including a second nitride semiconductor containing gallium nitride, and a third layer including the first nitride semiconductor containing aluminum nitride.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: April 12, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Hideto Sugawara
  • Patent number: 9270085
    Abstract: A multi-wavelength semiconductor diode laser device includes a semiconductor diode gain medium including one or more quantum well structures, each of the quantum well structures having an associated gain peak, the semiconductor gain medium further including a back facet configured for high reflection of laser light therein and a front facet configured for coupling a laser beam therefrom, one or more collimation optics configured to receive the laser beam, and an external volume Bragg grating configured to reflect a portion of the laser beam and narrow the wavelength of at least a portion of the light generated by the semiconductor gain medium to a selected wavelength corresponding to at least one of the gain peaks, wherein an output beam is coupled out of the external volume Bragg grating, the output beam having a plurality of output wavelengths.
    Type: Grant
    Filed: November 18, 2014
    Date of Patent: February 23, 2016
    Assignee: nLIGHT Photonics Corporation
    Inventor: Manoj Kanskar
  • Patent number: 9231368
    Abstract: Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: January 5, 2016
    Assignee: Thorlabs Quantum Electronics, Inc.
    Inventors: Catherine Genevieve Caneau, Feng Xie, Chung-En Zah
  • Patent number: 9136673
    Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: September 15, 2015
    Assignee: The Regents of the University of California
    Inventors: Casey O. Holder, Daniel F. Feezell, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • Patent number: 9099840
    Abstract: A distributed feedback (DFB) laser includes a substrate of a compound semiconductor material, and quantum-well (QW) active layer(s) overlying the substrate. A p-doped cladding layer including the compound semiconductor material is on one side of the active layer and an n-doped cladding layer is on the other side. A grating is in one of the cladding layers configured to select an operating wavelength for the DFB laser. A waveguide structure in the n-doped cladding layer includes a waveguide layer of a first composition compositionally different from the compound semiconductor material having an optical thickness of 0.7 to 1.5 of the guided wavelength. The waveguide structure can further include a hetero-waveguide stack including a plurality of alternating compositional layers beyond the waveguide layer each having a thickness between one quarter and one half the guided wavelength alternating the compound semiconductor material with a second composition defining a composition wavelength.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: August 4, 2015
    Assignee: Gooch and Housego PLC
    Inventors: Alexander Rosiewicz, Marcel Franz Christian Schemann
  • Patent number: 9048629
    Abstract: A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by the protection diode. Reducing the amount of capacitance that is introduced by the protection diode allows the VCSEL to operate at higher speeds.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: June 2, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventor: Ramana Murty
  • Publication number: 20150146757
    Abstract: A semiconductor laser module includes: a semiconductor laser outputting a laser light from an output-facet side of a waveguide which has a first narrow portion identical in width, a wide portion wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion between the first narrow portion and the wide portion and increasing in width toward the wide portion, and a second tapered portion between the wide portion and the second narrow portion and decreasing in width toward the second narrow portion; and an optical fiber to which the laser light is input has an optical-feedback unit reflecting a predetermined wavelength of light. The semiconductor laser is enclosed in a package with one end of the optical fiber. The optical-feedback unit has a first optical-feedback unit set at a predetermined reflection center wavelength determining an oscillation wavelength and a second optical-feedback unit.
    Type: Application
    Filed: February 5, 2015
    Publication date: May 28, 2015
    Inventors: Yutaka OHKI, Satoshi ARAKAWA, Shunsuke OKUYAMA, Masaki FUNABASHI, Junji YOSHIDA, Hidehiro TANIGUCHI
  • Patent number: 9042422
    Abstract: Disclosed is an ASE-free continuously tunable external resonator laser in which reduction in tuning range and decrease in output are suppressed. The external resonator laser comprises: a fixed support body which has a half mirror that partially reflects incident light and partially transmits incident light fixed therein; and a rotatory support body which is rotatably supported by the fixed support body by way of a shaft, and which has a laser chip that emits light, a collimator lens that collimates light emitted from the laser chip, and a diffraction grating that diffracts light emitted from the laser chip, fixed therein.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: May 26, 2015
    Assignee: NATIONAL UNIVERSITY CORPORATION CHIBA UNIVERSITY
    Inventors: Kiyohumi Muro, Tomohisa Endo, Yasutaka Shimada, Daisuke Fukuoka
  • Publication number: 20150139260
    Abstract: The present invention relates to a laser device being formed of at least one VCSEL (15) with intracavity contacts. The VCSEL comprises a layer structure (18) with an active region (6) between a first DBR (4) and a second DBR (10), a first current-injection layer (5) of a first conductivity type between the first DBR (4) and the active region (6), and a second current-injection layer (8) of a second conductivity type between the second DBR (10) and the active region (6). The first and second current-injection layers (5, 8) are in contact with a first and a second metallic contact (11, 12), respectively. The first and/or second DBR (4, 10) are formed of alternating Aluminum oxide and Al(x)Ga(1?x)As containing layers. The proposed design of this VCSEL allows an increased efficiency and lower production costs of such a laser since the top and bottom DBRs may be formed of a considerable reduced thickness.
    Type: Application
    Filed: July 1, 2013
    Publication date: May 21, 2015
    Inventors: Philipp Henning Gerlach, Alexander Weigl, Christian Wimmer
  • Publication number: 20150139261
    Abstract: A semiconductor device includes a silicon substrate, alight-emitting function layer made of nitride semiconductor, and at least one multilayer film in which two to four lamination pairs are laminated, the lamination pair being a laminated body of a first semiconductor layer made of AlxGa1-xN and a second semiconductor layer made of AlYGa1-YN, the multilayer film being arranged between the silicon substrate and the light-emitting function layer, wherein in the lamination pair that is the closest to the light-emitting function layer in the multilayer film, an Al composition X is equal to or larger than an Al composition Y, in the other lamination pair, the Al composition X is larger than the Al composition Y.
    Type: Application
    Filed: November 19, 2014
    Publication date: May 21, 2015
    Inventor: Tetsuji MATSUO
  • Publication number: 20150131686
    Abstract: A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Bragg grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability.
    Type: Application
    Filed: December 3, 2013
    Publication date: May 14, 2015
    Inventors: John C. Connolly, Donald E. Ackley, Scott L. Rudder, Harald R. Guenther
  • Publication number: 20150131691
    Abstract: The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.
    Type: Application
    Filed: November 30, 2012
    Publication date: May 14, 2015
    Inventors: Yong-Tak Lee, Sung Joon Jang, Young Min Song
  • Publication number: 20150131690
    Abstract: A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Bragg grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability.
    Type: Application
    Filed: February 24, 2014
    Publication date: May 14, 2015
    Applicant: Innovative Photonic Solutions
    Inventors: John C. Connolly, Donald E Ackley, Scott L. Rudder, Harald R. Guenther
  • Patent number: 9031112
    Abstract: A manufacturing method for an excimer laser that includes a reflective Echelle diffraction grating includes obtaining information of a wavelength of a light source, a blazed order, a repetitive pitch of the grating, a material of the grating, and a predefined orientation ratio B/A that is a ratio between that a diffraction efficiency A of the blazed order and a diffraction efficiency Bb of an order lower by one order than the blazed order, and determining an initial value of a blaze angle based upon these pieces of information.
    Type: Grant
    Filed: October 2, 2012
    Date of Patent: May 12, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tsuyoshi Kitamura, Takashi Sukegawa
  • Patent number: 9031106
    Abstract: Implementing a layered hyperbolic metamaterial in a vertical cavity surface emitting laser (VCSEL) to improve thermal conductivity and thermal dissipation thereby stabilizing optical performance. Improvement in the thermal management and power is expected by replacing the distributed Bragg reflector (DBR) mirrors in the VCSEL. The layered metamaterial structure performs the dual function of the DBR and the heat spreader at the same time.
    Type: Grant
    Filed: August 7, 2014
    Date of Patent: May 12, 2015
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Yannick C. Morel, Igor I. Smolyaninov
  • Patent number: 9025634
    Abstract: The protective film that covers the top distributed Bragg reflecting mirror has a central region and a peripheral region. The central region has a protrusion that projects relative to the peripheral region in a direction in which the laser light is emitted. The VCSEL satisfies relations below: dp×n=(N/2)×?, and dc×n=dp×n+(1/4+M/2)×?, where ? is a wavelength of the laser light in vacuum; dc is a film thickness of the protective film in the central region; dp is a film thickness of the protective film in the peripheral region; n is a refractive index of the protective film (wherein a refractive index of air<the refractive index n of the protective film<a refractive index of the top distributed Bragg reflecting mirror); and N is a natural number. M is zero or a natural number.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: May 5, 2015
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventor: Takemasa Tamanuki
  • Patent number: 9025628
    Abstract: A semiconductor laser includes: a first reflector that is provided in a gain region and has a sampled grating in which a plurality of segments are combined; and a second reflector that is optically connected to the first reflector and has a sampled grating in which a plurality of segments are combined, the plurality of segments of the first reflector having a short-segment region and a long-segment region, the long-segment region having an optical length that is larger than that of the short-segment region and being positioned closer to the second reflector than at least one of the short-segment region, the optical length of the long-segment region being larger than that of the short-segment region in a range of integral multiple (n?1) plus-minus 25% of the optical length of the short-segment.
    Type: Grant
    Filed: May 20, 2013
    Date of Patent: May 5, 2015
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Tsutomu Ishikawa, Toshimitsu Kaneko
  • Patent number: 9025630
    Abstract: A tuneable laser source includes a first confinement layer forming a Bragg reflector for a pump wave; an active layer made of non-linear semiconducting material, the refraction index of the active layer being greater than the refraction index of the first confinement layer; a second confinement layer, the refraction index of the second confinement layer being less than the refraction index of the active layer; a base with a first width; and a ribbon with a second width less than the first width. The second width is less than 10 ?m; the active layer includes at least one plane of quantum boxes capable of emitting a pump wave and the ribbon includes at least the part of the active layer including the quantum boxes plane and the second confinement layer.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: May 5, 2015
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Jean-Michel Gerard, Giuseppe Leo, Alessio Andronico, Sara Ducci
  • Patent number: 9020004
    Abstract: A ring resonator is connected to an optical amplifier. The ring resonator and optical amplifier are contained within the optical path of an optical resonator formed by a first and second reflector. The optical coupler branches part of the light conducting from the optical amplifier to the ring resonator within the optical resonator off to an output optical waveguide.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: April 28, 2015
    Assignee: Fujitsu Limited
    Inventor: Seokhwan Jeong
  • Patent number: 9020006
    Abstract: Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: April 28, 2015
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Michael Renne Ty Tan, David A. Fattal, Wayne V. Sorin, Sagi Varghese Mathai
  • Patent number: 9014225
    Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a bottom distributed Bragg reflector (DBR); a top DBR; an optical cavity with an active layer stack formed between the bottom DBR and the top DBR, arranged for generating light with a predetermined emission wavelength; a top electrode layer with a first window formed above the top DBR; and a first heat dissipation layer sandwiched between the top DBR and the top electrode layer. The VCSEL device utilizes thicker, heavily doped semiconductor contact window for efficient heat dissipation from active region. Besides heat dissipation on the top side of VCSEL device, it also increases the bandwidth of VCSEL through top DBR reflectivity changes that reduce the photon lifetime via a surface relief structure etching on the top side of VCSEL device. Further, the invented VCSEL contains adjusted Aluminum molefractions in multiple sections of top and bottom DBRs to effectively dissipate heat from active region of VCSEL.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: April 21, 2015
    Assignee: SAE Magnetics (H.K.) Ltd.
    Inventor: Babu Dayal Padullaparthi
  • Patent number: 9001852
    Abstract: The wavelength tunable laser includes a thermo-electric cooler (TEC), a distributed feedback portion, and a semiconductor optical amplifier (SOA). The distributed feedback portion is disposed on the thermo-electric cooler and has a plurality of distributed feedback (DFB) lasers connected in series. Each DFB laser is configured to output an optical signal within a different temperature dependent tunable range of wavelengths. Therefore, the distributed feedback portion outputs an optical signal from one of the DFB lasers. The SOA is optically connected to the distributed feedback portion. The SOA amplifies and modulates the optical signal outputted from the distributed feedback portion.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: April 7, 2015
    Assignee: Google Inc.
    Inventors: Ryohei Urata, Pedram Zare Dashti, Cedric Fung Lam, Xiangjun Zhao, Hong Liu
  • Patent number: 9001859
    Abstract: The ridge semiconductor laser is a semiconductor laser in which a carrier stopper layer made of an AlInAs compound, a clad layer made of an AlGaInAs compound, and an etching stopper layer made of an InGaAsP compound are stacked in sequence on one side of an active layer made of an AlGaInAs compound. The ridge semiconductor laser is provided with a ridge waveguide including, in a layer made of an InP compound, a diffraction grating made of an InGaAsP compound on the opposite side of the clad layer of the etching stopper layer.
    Type: Grant
    Filed: January 27, 2011
    Date of Patent: April 7, 2015
    Assignee: NTT Electronics Corporation
    Inventors: Atsuo Kozen, Yasuyoshi Ote, Jun-ichi Asaoka, Kenji Hirai, Hiroshi Yokoyama
  • Publication number: 20150092807
    Abstract: A system for generating a shaped optical pulse is disclosed. The system includes a master oscillator for generating an initial optical pulse, which is then directed to a semiconductor optical amplifier to amplify a portion of the initial optical pulse. The amplified pulse is reflected from a fiber Bragg grating to spectrally clean the amplified pulse and the reflected portion is returned back through the semiconductor optical amplifier. The semiconductor optical amplifier is activated a second time to amplify the reflected portion of the pulse. The time delay between the two activations of the semiconductor optical amplifier is selected to generate an output pulse with desired duration and/or amplitude profile over time.
    Type: Application
    Filed: December 10, 2014
    Publication date: April 2, 2015
    Inventors: Timothy McComb, Fabio Di Teodoro