Abstract: A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.

Abstract: A composite light source includes a substrate having a top surface, and a first vertical light source formed in the substrate. The first light source includes least a lower mirror, a first active region above the lower mirror, wherein the first active region has a thickness sufficient when electrically pumped to emit predominantly a spontaneous vertical emission from the first active region towards the top surface having an angular range of at least (?) 30°. A second light source is formed in the substrate above the first active region including a second active region. The spontaneous vertical emission is at a first wavelength ?1 that optically drives said second active region to provide an emission at a second wavelength ?2, wherein ?2>?1.

Abstract: Integrated upconversion devices capable of upconverting incident visible to short wavelength infrared photons to visible photons are disclosed. The device may include a quantum dot-based photodiode and a light-emitting diode. The device may further include a gain element such as a thin-film transistor.

Abstract: A method to tune an emission wavelength of a laser diode (LD) finely is disclosed. The method first controls a temperature of the etalon filter in T1 or T2, where the transmittance of the etalon filter becomes 40 to 50%, assuming a height between the peak and the bottom of the periodic transmittance to be 100%, at the grid wavelength ?1 or ?2, respectively. Then, the temperature of the LD is adjusted such that the intensity of light emitted from the LD and transmitted through the etalon filter becomes 40 to 50%.

Abstract: A laser module is described for an image projection system, which has a duochromatic laser diode designed to generate a first beam bundle having laser light of a first wavelength and laser light of a second wavelength; a first collimating optics system designed to collimate the first beam bundle; at least one first monochromatic laser diode designed to generate a second beam bundle having laser light of a third wavelength; a second collimating optics system designed to collimate the second beam bundle; and a first optical combination device developed to combine the first and second beam bundles in order to form an output beam bundle of the laser module.

Abstract: The laser mount arrangement can have a laser bar and a driver positioned adjacent to one another and secured against a connection face of a heat sink base. The heat sink base is connected to and forms a first electrical connection between the laser bar and the driver. A second electrical connection is also provided between the laser bar and the driver opposite the heat sink base, which can be in the form of a flexible metal sheet with a narrow upward fold. This arrangement can provide a low inductance path for the current.

Abstract: A conduction cooled high power semiconductor laser and a method for fabricating the same are provided. The conduction cooled high power semiconductor laser comprises a heat sink (2) and one or more semiconductor laser units (1). The semiconductor laser unit consists of a laser chip (3), a substrate (4) bonded to the laser chip for heat dissipation and electrical connection, and an insulation plate (5) soldered to the substrate for insulation and heat dissipation. The semiconductor laser unit is soldered on the heat sink with the insulation plate therebetween. The semiconductor laser unit may be tested, aged, and screened in advance, and thereby the yield of the lasers can be improved and the manufacturing costs can be reduced. The laser has desirable heat dissipation performance, high reliability, and is applicable to high temperature and other complex and volatile environments.

Abstract: A module is configured with a housing enclosing a diode laser. Fast and slow axes collimators are located behind the rear facet of the laser, which along with a front facet, defines an intra-cavity cavity of the laser. The facets are partially transmissive to light and therefore emit laser light. A wavelength selective optical element is aligned with the collimators and configured to reflect light emitted through the back facet and processed by collimators back into the intra-cavity. As a result, the laser beam is emitted through the front facet at a wavelength locked on the desired wavelength of the optical element. A delivery fiber is mechanically coupled to the front facet of diode laser and configured to receive and guide the emitted laser beam along the path of light.

Abstract: A compact, optically-pumped solid-state microchip laser device uses efficient nonlinear intracavity frequency conversion for obtaining low-cost green and blue laser sources. The laser includes a solid-state gain medium, such as Nd:YVO4, and a nonlinear crystal. The nonlinear crystal is formed of periodically poled lithium niobate or periodically poled lithium tantalate, and the crystal is either MgO-doped, ZnO-doped, or stoichiometric to ensure high reliability. The nonlinear crystal provides efficient frequency doubling to translate energy from an infrared pump laser beam into the visible wavelength range. The laser device is assembled in a package having an output aperture for the output beam and being integrated with an optical bench accommodating a laser assembly. The package encloses and provides heat sinking for the semiconductor diode pump laser, the microchip laser cavity assembly, the optical bench platform, and electrical leads.

Abstract: A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

Abstract: Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a bottom distributed Bragg reflector (DBR); a top DBR; an optical cavity with an active layer stack formed between the bottom DBR and the top DBR, arranged for generating light with a predetermined emission wavelength; a top electrode layer with a first window formed above the top DBR; and a first heat dissipation layer sandwiched between the top DBR and the top electrode layer. The VCSEL device utilizes thicker, heavily doped semiconductor contact window for efficient heat dissipation from active region. Besides heat dissipation on the top side of VCSEL device, it also increases the bandwidth of VCSEL through top DBR reflectivity changes that reduce the photon lifetime via a surface relief structure etching on the top side of VCSEL device. Further, the invented VCSEL contains adjusted Aluminum molefractions in multiple sections of top and bottom DBRs to effectively dissipate heat from active region of VCSEL.

Abstract: A vertical cavity surface emitting laser (VCSEL) nanoscope is provided. The VCSEL nanoscope combines a VCSEL with a nano-scale aperture using a support member to separate the aperture from the VCSEL emission face. The resulting device is a useful near-field probe with a wide variety of applications.

Abstract: A system and method for adjusting the coherence length of a tunable laser to optimize measurements and reduce artifacts. A tuning element of the laser system modulates, adjusts, or controls parameters associate with the tunable laser, such that the output wavelength of the tunable laser is modulated or adjusted over a wavelength range within a time interval. Modulation of the parameter has the effect of increasing a linewidth of the tunable laser.

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract: A multi-wavelength semiconductor laser device includes: first and second device sections monolithically formed on a substrate; and a rear end face film formed together on a rear end face of each of the first and second device sections. The first device section is a light-emitting device section having an oscillation wavelength of ?1. The second device section is a light-emitting device section having an oscillation wavelength of ?2 (?1<?2). The rear end face film includes a layer in which N sets (N?2) of layers each having the combination of a low refractive index layer having a refractive index of n1 and a high refractive index layer having a refractive index of n3 (n1<n3) as one set are laminated, and an intermediate refractive index layer having a refractive index of n2 (n1<n2<n3) in order from the rear end face side, and is constituted by a film different from an Si film.

Abstract: A heat sink mount for a laser diode comprises three main components, a diode ring, a diode bed and a diode container. The diode ring comprises an inner hole that matches a metal stem part of the laser diode. The diode bed comprises a first part and a second part. The diode ring is fitted into the first part of the diode bed. The inner surface of the first part is tightly contacting the outer surface of the diode ring. The diode container comprises a part a and a part b. The diode bed is fitted into the part a of the diode container, via the gripping contact between the thread on the inner surface of the part a and the thread on the outer surface of the second part of diode bed. This heat sink mount has lower costs and higher heat dissipation efficiency.

Abstract: An embodiment is a semiconductor device comprising an optical device over a first substrate, a vertical waveguide on a top surface of the optical device, the vertical waveguide having a first refractive index, and a capping layer over the vertical waveguide, the capping layer configured to be a lens for the vertical waveguide and the capping layer having a second refractive index.

Abstract: A system and method to determine data sets of front mirror current, back mirror current and phase current that change the wavelength output by a semiconductor laser in a prescribed trajectory versus time, while maintaining the maximum side-mode suppression ratio at each point during the sweep.

Abstract: A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

Abstract: In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 ? to equal to or less than 0.9 ?, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.

Abstract: A device for transformation of concentrated solar energy including a photovoltaic cell and laser device, which includes a first reflecting mirror adapted for entry of a beam of solar rays and a second reflecting mirror adapted for an outlet of a laser beam, with the first reflecting mirror reflective on an outlet wavelength of the laser beam and transparent to a totality of a solar spectrum and the second reflecting mirror partially reflective on the wavelength of the laser beam, reflective in an interval of the solar spectrum which is absorbed and transparent in other wavelengths different to these, and at the outlet of the laser beam. The device includes a nucleus doped with substances for total or partial absorption of the solar spectrum and coatings.

Abstract: A semiconductor laser is provided with one or more rear ports and one front port and with a multi-mode interference optical waveguide that has an active layer (light emitting layer) in all regions in plan view. The front port corresponds to an imaging point at which fundamental mode light forms an image in the active layer (light emitting layer) perpendicular to the waveguide direction of the multi-mode interference optical waveguide, and in plan view the front port is disposed along a central line, off center with respect to a central line, along the waveguide direction of the multi-mode interference optical waveguide.

Abstract: Provided is an optical device capable of bonding each optical part to a substrate with the same applied load by surface activated bonding even if the planar shape sizes of a plurality of optical parts to be mounted on the substrate are different from one another. The optical device includes a substrate, a plurality of optical parts different in planar shape size, bonded to the substrate by surface activated bonding adjacent to one another, and optically coupled with one another, and a plurality of bonding parts provided on the substrate in correspondence to the plurality of optical parts and including metallic micro bumps for bonding each optical part. The total area of the top surfaces of the micro bumps to be bonded to the corresponding optical part of each of the plurality of bonding parts is substantially the same.

Abstract: A semiconductor laser assembly has at least one semiconductor laser which is designed to emit laser radiation through an exit area and at least one further area, the further area being a part of a surface of the semiconductor laser and/or of the semiconductor laser assembly and the further area is developed to be reflecting to the radiation of at least one specifiable wavelength range. For this purpose, a reflecting metal layer is applied, for example. The semiconductor laser having a laser layer is able to be fastened to a carrier element with the aid of a solder layer.

Abstract: In an embodiment, a distributed Bragg reflector (DBR) laser includes a gain section and a passive section. The gain section includes an active region, an upper separate confinement heterostructure (SCH), and a lower SCH. The upper SCH is above the active region and has a thickness of at least 60 nanometers (nm). The lower SCH is below the active region and has a thickness of at least 60 nm. The passive section is coupled to the gain section, the passive section having a DBR in optical communication with the active region.

Abstract: An optical module providing higher reliability during high-speed light modulation and a lower bit error rate when built into a transmitter (transceiver). An optical module contains a taper mirror for surface emission of output light, an optical modulator device, and an optical modulation drive circuit, and the optical modulator device and the optical modulation drive circuit are mounted at positions so as to enclose the taper mirror.

Abstract: The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming apparatus each including the surface emitting laser. The surface emitting laser includes a first stepped structure on a front surface of a front mirror. In the first stepped structure, a difference L between an optical path length in a first area and an optical path length in a second area satisfies the following expression: (¼+N)?<|L|<(¾+N)? where N is an integer.

Abstract: According to the present invention, a resin composition having superior workability is provided. The paste-like resin composition of the present invention adheres a semiconductor element and a base material, and contains (A) a thermosetting resin and (B) metal particles. d95 in the volume-based particle size distribution of the metal particles as determined with a flow-type particle image analyzer is 10 ?m or less. In other words, the volume ratio of metal particles having a particle diameter that exceeds 10 ?m is less than 5%. Here, d95 indicates the particle diameter at which the cumulative volume ratio thereof is 95%.

Abstract: A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 ?m.

Abstract: Use of semiconductor materials having a lattice constant of within +/?1.6% of 6.1 angstroms facilitates improved semiconductor device performance and new semiconductor structures, for example integration of field-effect devices and optoelectronic devices on a single wafer. High-mobility channels are enabled, improving device performance.

Abstract: Provided is a semiconductor laser device which can generate an ultra-short pulse light. A semiconductor laser device disclosed herein includes a semiconductor laser unit that performs a gain-switching operation using a relaxation oscillation mechanism to generate a first pulse and a following component of the first pulse, and a filter that processes an output from the semiconductor laser unit by removing a signal in a wavelength bandwidth generated due to at least the following portion in a wavelength bandwidth broadened by chirping. The filter is configured as a short pass filter which passes a short-wavelength component. Further, an apparatus using non-linear optical effect which uses the semiconductor laser device is also provided.

Abstract: Provided is a wavelength variable laser device wherein an SOA is simplified. The wavelength variable laser device includes: an optical filter formed on a PLC; an SOA that supplies light to the optical filter; a light reflecting section that returns the light transmitted through the optical filter to the SOA via the optical filter; optical waveguides which are formed on the PLC and connect the SOA, the optical filter, and the light reflecting section; a wavelength variable section that changes a wavelength of the light transmitting through the optical filter; and a phase variable section that changes a phase of the light propagated on the optical waveguides.

Abstract: A laser device for emitting THz waves includes a heterostructure with a substantially cylindrical shape including a first layer in an optically nonlinear semiconductor material including emitters to emit in two whispering gallery modes that are confined in the first layer and enabling the generation within the first layer of radiation in an electromagnetic THz whispering gallery mode, a second and a third layer in a semiconductor material each presenting an optical index that is smaller than the index of the material used for the first layer and a metal layer situated at one end of the heterostructure. The heterostructure includes in its center a hole with a substantially cylindrical shape extending over the entire height of the heterostructure.

Abstract: Provided is a multi-wavelength laser diode module including a plurality of laser diodes having different consecutive light emission wavelength regions, a plurality of filters respectively corresponding to the plurality of laser diodes, and an optical waveguide path that transmits light emitted from the plurality of laser diodes to the plurality of filters and collects light reflected or transmitted by the plurality of filters to transmit the collected light to the outside.

Abstract: The invention relates to a semiconductor laser having at least one semiconductor substrate (10), at least one active layer (20) arranged on the semiconductor substrate (10) which generates radiation in a wavelength region, at least one laser mirror (40) which is applied at one end of the active layer (20) perpendicular thereto, through which a part of the radiation generated in the active layer (20) emerges, and which is provided with a layer of absorbing material (50, 60) said layer being suitable for reducing a gradient of the luminous-power/current characteristic for radiation emerging through the laser mirror (40).

Abstract: Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over the substrate, and a quantum cascade structure including a superlattice of quantum wells and barriers over the metamorphic buffer layer structure. The substrate may be GaAs and the quantum cascade structure may be an InGaAs/InAlAs superlattice, including one or more barriers of AlAs.

Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 ?m is arranged between the laser diode chip and the mounting part.

Abstract: A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.

Abstract: A radiation-emitting component is specified, having a metallic carrier body (1), which comprises at least two connection locations (1a, 1b) for making electrical contact with the component, a laser diode chip (2), which is fixed to the metallic carrier body (1) and is electrically conductively connected to the at least two connection locations (1a, 1b), a housing (3), which surrounds the metallic carrier body (1) in places, wherein the housing (3) is formed with a plastic, the connection locations (1a, 1b) extend in each case at least. in places along a bottom face (3a) and a side face (3b) of the housing (3), said side face running transversely with respect to the bottom face, and the component is surface-mountable by means of the connection locations (1a, 1b) in such a way that the bottom face (3a) or the side face (3b) forms a mounting face of the component.

Abstract: A photonic crystal surface emitting laser array reduces the occurrence of reflected feedback light while also reducing input of leaking light. The photonic crystal surface emitting laser array includes a plurality of first photonic crystal regions that cause laser oscillation, a second photonic crystal region that causes light diffraction to occur in an out-of-plane direction, and a light absorber that is provided above the second photonic crystal region and that absorbs light having a wavelength ?. A radiation coefficient of each first photonic crystal region is smaller than a radiation coefficient of the second photonic crystal region.

Abstract: A spatially modulated waveguide Bragg grating mirror is suspended over a substrate by plurality of fingers extending laterally away from the waveguide centerline. The positions of the fingers are coordinated with the positions of crests and valleys of amplitude or phase modulation of the Bragg grating, to avoid disturbing the Bragg grating when it is tuned by heating. When the Bragg grating is heated, the heat flows through the fingers creating a quasi-periodic refractive index variation along the Bragg grating due to quasi-periodic temperature variation created by the heat flow from the grating through the supporting fingers. Due to coordination of the positions of supporting fingers with positions of the crests and valleys of modulation, the optical phase coherence is maintained along the Bragg grating, so that the spectral lineshape or filtering property of the Bragg grating is substantially preserved.

Abstract: Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Abstract: The invention makes it possible to adjust the light intensity of a laser scanning microscope laser beam in an economical manner and with high accuracy. A separate acousto-optic component can be omitted in that a light modulation section such as an electroabsorption modulator (EAM) or a semiconductor amplifier (SOA) is arranged directly at the laser diode, advisably at one of its front sides. It is nevertheless possible to control the light intensity economically and with high accuracy because the important parameters of the laser beam remain unchanged when the optical output power is changed by the light modulation section. The light modulation section is preferably formed integral with the laser diode in at least one material layer.

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.