Abstract: Provided here are: a laser diode section provided on a surface of an n-type InP substrate; a spot-size converter section provided on a surface of the n-type InP substrate, the spot-size converter section being composed of a core layer which causes emitted laser light to propagate therein, a p-type InP cladding layer on a front surface side of the core layer, an n-type InP cladding layer—on a back surface side of the core layer, n-type InP cladding layers provided on the both sides of the core layer, and a p-type InP cladding layer provided on respective surfaces of the p-type InP cladding layer and the first cladding layers; a window region provided on a surface of the n-type InP substrate—that is placed on a front-end side of the core layer; and a monitor PD as a monitor section provided on a surface of the window region.

Abstract: An optical sensor system includes a set of epitaxial layers formed on a semiconductor substrate. The set of epitaxial layers defines a semiconductor laser having a first multiple quantum well (MQW) structure. Electromagnetic radiation is generated by the first MQW structure, emitted from the first MQW structure, and self-mixed with a portion of the emitted electromagnetic radiation that is returned to the first MQW structure. The set of epitaxial layers also defines a second MQW structure operable to generate a first photocurrent responsive to detecting a first emission of the semiconductor laser, and a third MQW structure operable to generate a second photocurrent responsive to detecting a second emission of the semiconductor laser. The optical sensor system also includes a circuit configured to generate a self-mixing interferometry (SMI) signal by combining the first photocurrent and the second photocurrent.

Abstract: An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; and at least one capacitor body, wherein the semiconductor chip and the capacitor body are stacked on top of each other, the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the semiconductor chip is a ridge waveguide laser, and a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: An optical scanning device includes: a light source; a light source driver that provides the light source with a drive current, on which a bias current that fluctuates according to temperature change is superimposed, for emitting light from the light source; and a bias current adjuster that provides the light source driver with a bias control signal for adjusting a magnitude of the bias current, wherein the bias current adjuster includes a current value adjusting member that is capable of changing the magnitude of the bias control signal according to temperature change, and wherein the bias control signal that has automatically changed according to temperature change of the current value adjusting member is provided to the light source driver, so that the light source driver makes the magnitude of the bias current to be superimposed fluctuate, based on the provided bias control signal.

Abstract: Provided is a waveguide photodetector including a semiconductor substrate, a first optical waveguide and a second optical waveguide, which are sequentially laminated on the semiconductor substrate, in which each of the first optical waveguide and the second optical waveguide includes a first portion and a second portion, and the first portion extends from the second portion in a first direction parallel to a top surface of the semiconductor substrate, a refractive index matching layer disposed on the second portion of the second optical waveguide, a clad layer disposed on the refractive index matching layer, and an absorber disposed between the refractive index matching layer and the clad layer. Here, the second optical waveguide has a first conductive-type, the clad layer has a second conductive-type opposite to the first conductive-type, and the refractive index matching layer includes a first semiconductor layer that is an intrinsic semiconductor layer.

Abstract: Techniques disclosed herein relate to devices that each include one or more photonic integrated circuits and/or one or more electronic integrated circuits. In one embodiment, a device includes a silicon substrate, a die stack bonded (e.g., fusion-bonded) on the silicon substrate, and a printed circuit board (PCB) bonded on the silicon substrate, where the PCB is electrically coupled to the die stack. The die stack includes a photonic integrated circuit (PIC) that includes a photonic integrated circuit, and an electronic integrated circuit (EIC) die that includes an electronic integrated circuit, where the EIC die and the PIC die are bonded face-to-face (e.g., by fusion bonding or hybrid bonding) such that the photonic integrated circuit and the electronic integrated circuit face each other. In some embodiments, the device also includes a plurality of optical fibers coupled to the photonic integrated circuit.

Abstract: The invention relates to a method for producing a light-emitting diode, comprising a stack formed of a first semiconductor layer 11 and of an active layer 13, a reflective electrode 4 extending in contact with the first semiconductor layer 11, comprising a step of determining a distance between emitting dipoles that are located in the active layer 13 and the reflective electrode 4 for which a lifetime of the emitting dipoles having a chosen orientation is longer than that of the emitting dipoles having the non-chosen orientation.

Abstract: A package includes a photonic integrated circuit die, an electric integrated circuit die, and an encapsulant. The photonic integrated circuit die includes a semiconductor substrate, an insulation layer, and a waveguide. The semiconductor substrate has a notch. The insulation layer is disposed on the semiconductor substrate. The waveguide is disposed on the insulation layer. The notch of the semiconductor substrate is underneath at least a portion of the waveguide. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The encapsulant laterally encapsulates the electric integrated circuit die.

Abstract: The present invention relates to a bias-switchable spectral response high performance PD with multi-mode detection, e.g., dual-mode photoresponses in NIR and visible light ranges. The dual-mode PD has the absorber/spacer type components in its active layer, e.g., a tri-layer configuration of absorber-1 (absorber-1 absorbs the electromagnetic wave of the first wavelength comprising visible light)/optical spacer/absorber-2 (absorber-2 absorbs the electromagnetic wave of the second wavelength comprising IR light). In the presence of IR light, photocurrent generates in the IR light absorbing layer under a reverse bias. In the presence of visible light, photocurrent generates in the visible light absorbing layer under a forward bias. A bias-switchable spectral response PD offers an attractive option for applications in environmental pollution, bio, medical, agricultural, automotive, fishery, food, wellness and security monitoring, detection and imaging in two or different or multiple distinct bands.

Abstract: An apparatus for particulate matter (PM) measurement includes a first light source to generate a first light beam and a second light source disposed at a first distance from the first light source to generate a second light beam in parallel to the first light beam to illuminate a PM. The apparatus further includes a first light detector to measure a first timing corresponding to a first self-mixing signal resulting from a reflection and/or back-scattering of the first light beam from a PM, and a second light detector to measure a second timing corresponding to a second self-mixing signal resulting from a reflection and/or back-scattering of the second light beam from the PM. A processor can determine a first velocity of the PM based on a spatial separation between centers of the first light beam and the second light beam and a temporal separation between the first timing and the second timing.

Abstract: This application describes a light emitting device or an assembly of light emitting devices. In the completed light emitting device, a distributed Bragg reflector minimizes the possibility of disturbing adjacent light emitting devices. Methods to fabricate such devices and assemblies of devices are also described.

Abstract: An array-based light detection and ranging (LiDAR) unit includes an array of emitter/detector sets configured to cover a field of view for the unit. Each emitter/detector set emits and receives light energy on a specific coincident axis unique for that emitter/detector set. A control system coupled to the array of emitter/detector sets controls initiation of light energy from each emitter and processes time of flight information for light energy received on the coincident axis by the corresponding detector for the emitter/detector set. The time of flight information provides imaging information corresponding to the field of view. Interference among light energy is reduced with respect to detectors in the LiDAR unit not corresponding to the specific coincident axis, and with respect to other LiDAR units and ambient sources of light energy. In one embodiment, multiple array-based LiDAR units are used as part of a control system for an autonomous vehicle.

Abstract: A stem includes a base member that includes a main body, a raised portion raised from the top surface of the main body, and a through-hole through the main body, a lead that is inserted into the through-hole of the base member and is fixed to the through-hole with a fixing material such that one end of the lead juts out of the top surface of the main body of the base member, and a substrate that is inserted into a gap between the raised portion of the base member and one end of the lead and is attached to the raised portion to be electrically connected to the one end. The lead has a curved surface curving in a direction widening the gap into which the substrate is inserted, or an inclined surface inclined in a direction widening the gap, on a tip of the one end.

Abstract: A method and apparatus for controlling an optical switch. The switch includes a switching fabric and optical amplifiers for amplifying optical signals. A configuration for the switching fabric is generated and implemented. The configuration indicates a set of optical paths between switching fabric input ports and the output ports. Optical path losses through the switching fabric vary based on the configuration. An amplifier control signal for controlling gains of the optical amplifiers, is also provided. The configuration for the switching fabric is generated based on the gains of the optical amplifiers, the amplifier control signal is generated based on the configuration for the switching fabric, or both.

Abstract: Embodiments herein describe optical interposers that utilize waveguides to detect light. For example, in one embodiment, an apparatus is provided that includes an optical detector having a first layer. The first layer includes at least one of polysilicon or amorphous silicon. The first layer forms a diode that includes a p-doped region and an n-doped region. The apparatus further includes a waveguide optically coupled to the diode and disposed on a different layer than the first layer.

Abstract: An optical receiver, used in wavelength-division multiplexing, has multiple photodetectors per channel. The optical receiver comprises a demultiplexer to separate incoming light into different output waveguides, one output waveguide for each channel. A splitter is used in each output waveguide to split each output waveguide into two or more branches. A separate photodetector is coupled with each branch so that two or more photodetectors are used to measure each channel.

Abstract: In one embodiment, a laser system includes a seed laser diode configured to produce a free-space seed-laser beam and a seed-laser focusing lens configured to focus the seed-laser beam. The laser system also includes a semiconductor optical amplifier (SOA) that includes a front facet, a back facet, and a waveguide extending from the front facet to the back facet. The SOA is configured to: receive, at the front facet, light from the focused seed-laser beam; amplify the received light as the received light propagates along the SOA waveguide from the front facet to the back facet; and emit, from the back facet, an amplified free-space beam that includes the amplified received light. The laser system further includes a mounting platform, where one or more of the seed laser diode, the seed-laser focusing lens, and the SOA are mechanically attached to the mounting platform.

Abstract: A composite optical waveguide is constructed using an array of waveguide cores, in which one core is tapered to a larger dimension, so that all the cores are used as a composite input port, and the one larger core is used as an output port. In addition, transverse couplers can be fabricated in a similar fashion. The waveguide cores are preferably made of SiN. In some cases, a layer of SiN which is provided as an etch stop is used as at least one of the waveguide cores. The waveguide cores can be spaced away from a semiconductor layer so as to minimize loses.

Abstract: An apparatus includes a number of photonic integrated circuit (PIC) imaging detector arrays, and multiple electronic integrated circuits (ICs) coupled to the PIC imaging detector arrays. Each PIC imaging detector array of includes a number of lenslets and a number of waveguides. At least some of the lenslets are coupled to multiple waveguides, and sets of two lenslets are configured to form interferometer channels.

Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

Abstract: A surface-emitting laser apparatus includes a surface-emitting laser substrate; a microlens substrate; and an adhesion agent. The surface-emitting laser substrate includes a semiconductor substrate; and a surface-emitting laser and plural first adhesion fixing regions formed on a first face of the semiconductor substrate. The microlens substrate includes a microlens configured to receive light emitted by the surface-emitting laser; plural pier portions protruding toward a side of the first face of the semiconductor substrate; and plural second adhesion fixing regions, formed at positions corresponding to the first adhesion fixing regions on surfaces of the pier portions. The adhesive agent causes the first adhesion fixing regions and the second adhesion fixing regions to adhere to each other. A restoring force acts on the adhesive agent in a case where the adhesive agent is melted.

Abstract: Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

Abstract: After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.

Abstract: An optical sensor for detecting chemical, biochemical or biological substances includes a laser and a semiconductor chip. The sensor includes at least one photodetector and at least one high-contrast grating that are monolithically integrated in the semiconductor chip. The high-contrast grating is configured to optically couple radiation emitted by the laser into the photodetector. The coupling behavior of the high-contrast grating depends on the optical properties of external substances that are brought near to or in contact with the high-contrast grating.

Abstract: A surface mount device type laser module includes a housing, an edge-emitting type laser diode unit, a reflective optical component and a base. The base is accommodated within the housing, and the edge-emitting type laser diode unit is integrated into the base. The base includes at least one surface transmission structure. The at least one surface transmission structure is exposed outside the base and the housing. An electronic signal is transmitted through the at least one surface transmission structure. A laser beam provided by the edge-emitting type laser diode unit is reflected by the reflective optical component, and the reflected laser beam is transmitted through an opening of the housing.

Abstract: Aspects of the present invention include an optical transceiver for providing transmission and reception of optical signals. The optical transceiver includes a carrier having two opposing surfaces and one or more openings extending from a first of the two opposing surfaces to a second of the two opposing surfaces. The optical transceiver includes a laser driver chip coupled to the first surface. The optical transceiver includes a vertical cavity surface emitting laser (VCSEL) array chip coupled to the first surface. The optical transceiver includes a photodetector array chip coupled to the first surface. The optical transceiver includes a receiver amplifier chip coupled to the first surface. The optical transceiver includes an optical coupling element coupled to the second surface. The VCSEL array chip and the photodetector array chip are disposed such that optical signals can pass through the one or more openings in the carrier.

Abstract: A method for switching a wavelength of a tunable wavelength laser, which is provided with a temperature control device for an etalon and a wavelength detecting section for identifying a wavelength of the laser by a front/back ratio of the etalon, the wavelength of the laser being set in a target wavelength on the basis of a detection result of the wavelength detecting section, and the method comprises: driving the laser at a first wavelength; suppressing output of light of the laser in response to a command indicating an optical output at a second wavelength; starting control of the temperature control device towards a second etalon temperature corresponding to the second wavelength; and before the etalon reaches the second etalon temperature, detecting that the etalon reaches a temperature range corresponding to an allowable wavelength range corresponding to the second wavelength, and cancelling the suppression of light in response thereto.

Abstract: An optical module includes an optical semiconductor device and a stem including a lead terminal configured to perform at least one of transmitting an electric signal to the optical semiconductor device or transmitting an electric signal output from the optical semiconductor device. The optical module also includes a substrate having a ground layer, a first opening through which the lead terminal passes, and a connecting portion configured to electrically connect the stem and the ground layer. The connecting portion is formed on one of an edge portion of the substrate and a surface of the substrate on a side on which the substrate is arranged on the stem.

Abstract: Various embodiments relating to a time-of-flight (TOF) depth camera including a vertical-cavity surface emitting laser (VCSEL) array device are disclosed. In one embodiment, a TOF depth camera includes a heat sink having a mounting surface, an illumination module mounted to the mounting surface, and an image sensor mounted to the mounting surface. The illumination module includes a printed circuit board (PCB), a VCSEL array device configured to generate illumination light to illuminate an image environment, and a driver configured to deliver an operating current to the VCSEL array device. The VCSEL array device and the driver are mounted to the PCB. The image sensor is configured to detect at least a portion of illumination light reflected from the image environment.

Abstract: There is provided an integrated laser. The integrated laser includes a semiconductor waveguide having a first section, a second section and a third section. The integrated laser further includes an active region formed on the third section of the semiconductor waveguide, the active region configured for generating light, and a coupler formed on the second section of the semiconductor waveguide, the coupler configured for coupling said light between the semiconductor waveguide and the active region. In particular, the first section comprises a multi-branch splitter having a ring structure formed between two branches of the multi-branch splitter for emission wavelength control of the integrated laser. Preferably, the multi-branch splitter is a Y-branch splitter and the ring structure is formed in a space between two branches of the Y-branch splitter. There is also provided a method of fabrication thereof, an integrated tunable laser and an integrated tunable laser system.

Abstract: There is set forth in one embodiment an apparatus and method for imparting a phase shift to an input waveform for output of a converted waveform. In one embodiment, a phase shift can be provided by four wave mixing of an input waveform and a pump pulse. In one embodiment, there is set forth an apparatus and method for generating a high resolution time domain representation of an input waveform comprising: dispersing the input waveform to generate a dispersed input waveform; subjecting the dispersed input waveform to four wave mixing by combining the dispersed input waveform with a dispersed pump pulse to generate a converted waveform; and presenting the converted waveform to a detector unit. In one embodiment a detector unit can include a spectrometer (spectrum analyzer) for recording of the converted waveform and output of a record representing the input waveform.

Abstract: A semiconductor light-emitting device includes: a stacked structure including a light-emitting layer, a first cladding layer, and a second cladding layer; a first electrode electrically connected with the first cladding layer; a second electrode electrically connected with the second cladding layer; and a third electrode electrically connected with the second cladding layer. The stacked structure includes an optical waveguide. The optical waveguide includes a straight waveguide portion extending from a light exiting portion along a straight line inclined to a normal of a front edge surface of the stacked structure, and a curved waveguide portion including a curved waveguide having a shape with a curvature. The density of current injected into the straight waveguide portion is higher than that of current injected into the curved waveguide portion.

Abstract: There is set forth in one embodiment an apparatus and method for imparting a phase shift to an input waveform for output of a converted waveform. In one embodiment, a phase shift can be provided by four wave mixing of an input waveform and a pump pulse. In one embodiment, there is set forth an apparatus and method for generating a high resolution time domain representation of an input waveform comprising: dispersing the input waveform to generate a dispersed input waveform; subjecting the dispersed input waveform to four wave mixing by combining the dispersed input waveform with a dispersed pump pulse to generate a converted waveform; and presenting the converted waveform to a detector unit. In one embodiment a detector unit can include a spectrometer (spectrum analyzer) for recording of the converted waveform and output of a record representing the input waveform.

Abstract: Optical bench structure provides a platform for integrating optical transmitters, particularly Vertical-Cavity Surface-Emitting Lasers (VCSELs), with monitor photodetectors. A substrate with photodetectors on the front side is aligned with flip-chip bonding bumps so the emission of the transmitters is aligned with the monitor photodetectors and passes through the monitor photodetectors with a portion of the transmitted light absorbed by the monitor photodetectors. The photodetectors have a thin absorption region so the percentage of light absorbed may be relatively small, providing sufficient photocurrent to monitor the transmitted power having a minimal effect on the transmitted power. Microlenses are integrated on the backside of the substrate focus, steer and/or collimate the emitted optical beams from the transmitters. The structure enables photodetectors to be integrated on the optical bench allowing the received optical power to be monitored.

Abstract: Disclosed is a device comprising: an anode; a cathode; an inorganic substrate; and at least one organic window layer positioned between: the anode and the inorganic substrate; or the cathode and the inorganic substrate. Also disclosed is a method of enhancing the performance of a photosensitive device having an anode, a cathode, and an inorganic substrate, comprising: positioning at least one organic window layer between the anode and the cathode. In one embodiment the organic window layer may absorb light and generate excitons that migrate to the inorganic where they convert to photocurrent, thereby increasing the efficiency of the device. Also disclosed is a method of enhancing Schottky barrier height of a photosensitive device, the method being substantially similar to the previously defined method.

Abstract: An optical module providing higher reliability during high-speed light modulation and a lower bit error rate when built into a transmitter (transceiver). An optical module contains a taper mirror for surface emission of output light, an optical modulator device, and an optical modulation drive circuit, and the optical modulator device and the optical modulation drive circuit are mounted at positions so as to enclose the taper mirror.

Abstract: A semiconductor device, a package structure, and methods of forming the same are disclosed. An embodiment is a semiconductor device comprising a first optical device over a first substrate, a vertical waveguide on a top surface of the first optical device, and a second substrate over the vertical waveguide. The semiconductor device further comprises a lens capping layer on a top surface of the second substrate, wherein the lens capping layer is aligned with the vertical waveguide, and a second optical device over the lens capping layer.

Abstract: A laser assembly comprises a substrate, one or more standoffs and a semiconductor laser. The substrate has a first doped region and a second doped region. The second doped region is proximate to an upper surface of the substrate and forms a pn junction with the first doped region. The semiconductor laser is operative to emit light from an upper surface and a lower surface. Moreover, the semiconductor laser is attached to the upper surface of the substrate with the one or more standoffs such that the light emitted from the lower surface of the semiconductor laser impinges on the second doped region.

Abstract: A light outputting device includes, a substrate, a vertical cavity surface emitting laser (VCSEL) provided on a surface of the substrate, including a light emitting surface which emits a light, and a monitoring detector provided on the light emitting surface of the VCSEL to receive a part of the light emitted from the VCSEL so as to monitor the amount of the light emitted from the VCSEL.

Abstract: The present invention relates to opto-isolators. Opto-isolators are disclosed that include a transmitter package and a vertical VCSEL disposed within the transmitter package. The opto-isolators further include a receiver package and a photodetector disposed within the receiver package. The photodetector is optically coupled to the VCSEL and configured to receive an output optical signal generated by the VCSEL. The opto-isolators further include an alignment package configured to receive the transmitter package and the receiver package. In another embodiment, opto-isolators include a VCSEL and a photodetector optically coupled to the VCSEL and configured to receive an output optical signal generated by the VCSEL. The opto-isolators further include a package enclosing both the VCSEL and the photodetector.

Abstract: A light emitting device includes: a light emitting unit and a light receiving unit which are provided on a same substrate, wherein the light emitting unit includes an active layer sandwiched between a first clad layer and a second clad layer, a first electrode electrically connected to the first clad layer, and a second electrode electrically connected to the second clad layer.

Abstract: A hybrid integrated optical device includes a substrate comprising a silicon layer and a compound semiconductor device bonded to the silicon layer. The device also includes a bonding region disposed between the silicon layer and the compound semiconductor device. The bonding region includes a metal-semiconductor bond at a first portion of the bonding region. The metal-semiconductor bond includes a first pad bonded to the silicon layer, a bonding metal bonded to the first pad, and a second pad bonded to the bonding metal and the compound semiconductor device. The bonding region also includes an interface assisted bond at a second portion of the bonding region. The interface assisted bond includes an interface layer positioned between the silicon layer and the compound semiconductor device, wherein the interface assisted bond provides an ohmic contact between the silicon layer and the compound semiconductor device.

Abstract: A vertically integrated optical phased array has an array of a plurality of vertical cavity surface emitting lasers disposed in an aperiodic arrangement thereof, the plurality of vertical cavity surface emitting lasers having light emitting ports disposed parallel to one another. An array of a plurality of vertical cavity phase modulators disposed in the same aperiodic arrangement as the array of the plurality of vertical cavity surface emitting lasers, with individual modulators of said array of a plurality of vertical cavity phase modulators each being disposed in optical alignment with an injection port of a corresponding one of said plurality of vertical cavity surface emitting lasers.

Abstract: Embodiments of the present disclosure provide optical connection techniques and configurations. In one embodiment, an opto-electronic assembly includes a first semiconductor die including a light source to generate light, and a first mode expander structure comprising a first optical material disposed on a surface of the first semiconductor die, the first optical material being optically transparent at a wavelength of the light, and a second semiconductor die including a second mode expander structure comprising a second optical material disposed on a surface of the second semiconductor die, the second material being optically transparent at the wavelength of the light, wherein the second optical material is evanescently coupled with the first optical material to receive the light from the first optical material. Other embodiments may be described and/or claimed.

Abstract: A composite integrated optical device includes a substrate including a silicon layer and a waveguide disposed in the silicon layer. The composite integrated optical device also includes an optical detector bonded to the silicon layer and a bonding region disposed between the silicon layer and the optical detector. The bonding region includes a metal-assisted bond at a first portion of the bonding region. The metal-assisted bond includes an interface layer positioned between the silicon layer and the optical detector. The bonding region also includes a direct semiconductor-semiconductor bond at a second portion of the bonding region.

Abstract: A projection type display apparatus in which an inclination and a positional deviation of optical axes among a plurality of light sources can be easily corrected to obtain a high quality projection image. Green, blue and red laser beams emitted from light sources are converted into collimated beams by condenser lenses, and the positions and angles of the optical axes of the beams of the three colors are evaluated by position detection imaging device and angle detection imaging device, respectively. The positions and angles of the light sources are adjusted by respective actuators so that the positions and angles of the optical axes match each other. Consequently, the laser beams emitted from the light sources can be combined with high accuracy to thereby realize a high definition projection type display apparatus.

Abstract: The invention includes a single chip having multiple different devices integrated thereon for a common purpose. The chip includes a substrate having a peripheral area, a mid-chip area, and a central area. A plurality of FETs are formed in the peripheral area with each FET having a layer of single crystal rare earth material in at least one of a conductive channel, a gate insulator, or a gate stack. A plurality of photonic devices including light emitting diodes or vertical cavity surface emitting lasers are formed in the mid-chip area with each photonic device having an active layer of single crystal rare earth material. A plurality of photo detectors are formed in the central area.