Abstract: Various lens shapes are able to transform laser beams into laser sheets that can span both two-dimensional (2D) and three-dimensional (3D) space in a controlled manner. The electromagnetic characteristics of the laser beams can be tailored as the laser light enters, traverses, and exits a lens. The projected image can be shaped. The lenses may have sections being multiply or simply connected with or without cavities. The lenses may also have solid or hollow race features, and coatings and/or material layers, which affect the output laser sheet. A fan angle of the produced laser sheet can be up to and include 360 degrees.

Abstract: Methods, devices, and systems for laser diode packaging platforms are provided. In one aspect, a laser diode assembly includes a heat sink and a plurality of laser diode units horizontally spaced apart from one another on the heat sink. Each laser diode unit includes: a first submount positioned on the heat sink and spaced apart from adjacent another first submount, a laser diode including an active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer, a bottom side of the laser diode being positioned on the first submount, and a second submount positioned on a top side of the laser diode and spaced apart from adjacent another second submount. The first submount, the laser diode, and the second submount in the laser diode unit are vertically positioned on the heat sink. The laser diodes of the plurality of laser diode units are electrically connected in series.

Abstract: A rechargeable battery-operated ignition smoking bong including a replaceable nichrome wire within an indentation on an inner perimeter of a bowl of the bong body, a fuel reservoir directly below and adjacent the interior cavity of the bowl, an ignition switch on a stem of a bong body to selectively activate one of the nichrome wire and an amount of fuel within the fuel reservoir to combust an ignitable smoking substance, such as tobacco, contained within the bowl, and a filter disposed between the stem and the bowl. The present device permits one-handed ignition to combust the smoking substance. The rechargeable battery-operated ignition smoking bong also includes a micro USB outlet and wireless charging receptacles to permit the bong to recharge without the hassle of changing batteries.

Abstract: In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, wherein the optical element and the semiconductor laser are cohesively connected to each other, and wherein the semiconductor laser and the optical element are integrated with the laser diode.

Abstract: A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.

Abstract: A semiconductor laser device includes: a housing including: a first upper upward-facing surface, a second upper upward-facing surface, a mounting surface, inner lateral surfaces, a first wiring part disposed on the first upper upward-facing surface, and a second wiring part disposed on the second upper upward-facing surface; a submount including: a first main surface fixed to the mounting surface of the housing, and a second main surface opposite to the first main surface; a semiconductor laser element fixed to the second main surface of the submount; a first wire connected to the first wiring part for electrical connection of the semiconductor laser element; and a second wire connected to the second wiring part for electrical connection of the semiconductor laser element.

Abstract: A light emitting element of the present disclosure includes a compound semiconductor substrate 11, a stacked structure 20 including a GaN-based compound semiconductor, a first light reflection layer 41, and a second light reflection layer 42. The stacked structure 20 includes, in a stacked state a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. The first light reflection layer 41 is disposed on the compound semiconductor substrate 11 and has a concave mirror section 43. The second light reflection layer 42 is disposed on a second surface side of the second compound semiconductor layer 22 and has a flat shape. The compound semiconductor substrate 11 includes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.

Abstract: An optical member includes: a main body having transparency or heat dissipation properties; an optical film disposed on an upper face of the main body; a metal film disposed on the upper face of the main body in a region other than a region where the optical film is disposed; a surrounding part joined via the metal film; and a wavelength conversion part surrounded by the surrounding part. The wavelength conversion part is positioned inward of a periphery of the optical film in a top view. The wavelength conversion part is not directly bonded to the optical film and the main body.

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Abstract: A lens alignment system and method is disclosed. The disclosed system/method integrates one or more lens retaining members/tubes (LRM/LRT) and focal length spacers (FLS) each comprising a metallic material product (MMP) specifically manufactured to have a thermal expansion coefficient (TEC) in a predetermined range via selection of the individual MMP materials and an associated MMP manufacturing process providing for controlled TEC. This controlled LRM/LRT TEC enables a plurality of optical lenses (POL) fixed along a common optical axis (COA) by the LRM/LRT to maintain precise interspatial alignment characteristics that ensure consistent and/or controlled series focal length (SFL) within the POL to generate a thermally neutral optical system (TNOS). Integration of the POL using this LRM/LRT/FLS lens alignment system reduces the overall TNOS implementation cost, reduces the overall TNOS mass, reduces TNOS parts component count, and increases the reliability of the overall optical system.

Abstract: In one example, a vertical cavity surface emitting laser (VCSEL) may include an active region to produce light at a wavelength, an emission surface to emit the light at the wavelength, a first oxide region spaced apart from the active region by a distance of at least a half-wavelength of the wavelength, a first oxide aperture in the first oxide region, a second oxide region between the first oxide region and the second oxide region, and a second oxide aperture in the second oxide region. The emitted light may have a divergence angle that is based on the respective positions and thicknesses of the first oxide region and the second oxide region.

Abstract: A radiation source for emitting terahertz radiation (6) is specified, comprising at least two laser light sources emitting laser radiation (11, 12) of different frequencies, and a photomixer (5) comprising a photoconductive semiconductor material (51) and an antenna structure (52), the photomixer (5) being configured to emit the laser radiation (11, 12) of the laser light sources (1, 2) and emitting terahertz radiation (6) with at least one beat frequency of the laser light sources, and wherein the at least two laser light sources are surface-emitting semiconductor lasers (1, 2) which are arranged in a one-dimensional or two-dimensional array on a common carrier (10).

Abstract: A monolithic QCL/APD IR Transceiver in which the QCL transmitter and APD receiver have the same N MQW stage composition and variation in thickness in the z direction for all positions in x and y directions. The heterostructure is configured via asymmetric stages, additional stages for the APD or by reversing the polarity of the p-n junction for the APD or a combination thereof such that the upper energy state in the QCL under forward bias is confined to the quantum well and in the APD under reverse bias is near the top of the quantum well in energy and localized in the quantum well to spatially overlap with the lower energy state to facilitate detection of echo photons. The QCL and APD may be positioned end-to-end, side-by-side or as a common region of the heterostructure.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a microlens arranged over a reflector stack. The reflector stack includes alternating reflector layers of a first material and a second material. The microlens stack includes a first lens layer, a second lens layer arranged over the first lens layer, and a third lens layer arranged over the second lens layer. The first lens layer includes a first average concentration of a first element and has a first width. The second lens layer includes a second average concentration of the first element greater than the first average concentration and has a second width smaller than the first width. The third lens layer includes a third average concentration of the first element greater than the second average concentration and has a third width smaller than the second width.

Abstract: A light source device includes at least one first wiring, a plurality of second wirings, a plurality of light emitting elements each having a lower-surface-side electrode connected to a respective one of the at least one first wiring, a plurality of protective elements each having a lower-surface-side electrode connected to a respective one of the plurality of second wirings each corresponding to a respective one of the plurality of light emitting elements, each of the plurality of protective elements connected to a respective one of the plurality of light emitting elements, a plurality of first wirings each connecting an upper-surface-side electrode of each of the plurality of light emitting elements and a respective one of the plurality of second wirings, a plurality of second wires each connecting the upper-surface-side electrodes of two adjacent ones of the protective elements; and a plurality of third wires each connecting an upper-surface-side electrode of a respective one of the plurality of protective

Abstract: A method of an optical member comprises: providing a light transmissive member or a heat dissipating member in which a metal film and an optical film having a larger thickness than a thickness of the metal film are formed in separate regions of an upper face of a main body of the light transmissive member or an upper face of a main body of the heat dissipating member, providing a wavelength conversion member in which a metal film is formed on a lower face of a main body of the wavelength conversion member, and bonding the metal film of the light transmissive member or the metal film of the heat dissipating member to the metal film of the wavelength conversion member via a metal adhesive while positioning the optical film directly under a wavelength conversion part of the wavelength conversion member.

Abstract: A submount includes a substrate, the substrate including: a first surface; a second surface that is perpendicular to the first surface; a third surface that is perpendicular to the first surface and the second surface; a fourth surface that is perpendicular to the first surface and the second surface, and is opposed to the third surface; a fifth surface that is perpendicular to the second surface and the third surface, and is opposed to the first surface; a sixth surface that is opposed to the second surface; a first notch part that is provided in a portion at which the second surface and the third surface are adjacent to each other; and a second notch part that is provided in a portion at which the second surface and the fourth surface are adjacent to each other, the first notch part and the second notch part each having a recessed surface.

Abstract: A micro-light emitting diode (LED) includes an epitaxial structure having a mesa and a top portion on the mesa. The epitaxial structure further includes quantum wells within the mesa configured to emit light, claddings surrounding the quantum wells, and a light emitting surface on a side opposite the mesa and top portion. A reflective contact is on the top portion of the epitaxial structure. Light emitted from the quantum wells are transmitted through the mesa and the top portion in first directions, and reflected by the reflective contact back through the top portion and the mesa in second directions toward the light emitting surface. The top portion allows the quantum wells to be positioned at a parabola focal point of the mesa without limiting cladding thickness.

Abstract: A lens assembly according to an embodiment includes a holder including a first sidewall having a first opening and a second sidewall having a second opening, a liquid lens unit including at least a portion disposed in the first opening and the second opening, and an adhesive member coupling the holder and the liquid lens unit, wherein the second opening faces the first opening in a direction perpendicular to an optical-axis of the liquid lens unit.

Abstract: The present invention provides a mixed analog and digital chip-scale reconfigurable WDM network. The network suitably includes a router that enables rapidly configurable wavelength selective routers of fiber optic data. The router suitably incorporates photonic wavelength selective optical add/drop filters and multiplexers.

Abstract: A lens assembly according to an embodiment includes a holder including a first sidewall having a first opening and a second sidewall having a second opening, a liquid lens unit including at least a portion disposed in the first opening and the second opening, and an adhesive member coupling the holder and the liquid lens unit, wherein the second opening faces the first opening in a direction perpendicular to an optical-axis of the liquid lens unit.

Abstract: Systems, devices, and methods for beam combining are described. A monolithic beam combiner includes a solid volume of optically transparent material having two orthogonally positioned planar input surfaces, an output surface, and at least two planar dichroic reflectors positioned within the solid volume. Multiple light sources input light into the solid volume through the two planar input surfaces such that each light beam from a respective source is initially incident on one of the planar dichroic reflectors. The light is reflected by and transmitted through the reflectors and an aggregate beam is created. Because the reflectors are within an optically transparent material the beam combiner can be made more compact than a conventional beam combiner. This monolithic beam combiner is particularly well suited for use laser projectors and in wearable heads-up displays that employ laser projectors.

Abstract: A lens assembly according to an embodiment includes a holder including a first sidewall having a first opening and a second sidewall having a second opening, a liquid lens unit including at least a portion disposed in the first opening and the second opening, and an adhesive member coupling the holder and the liquid lens unit, wherein the second opening faces the first opening in a direction perpendicular to an optical-axis of the liquid lens unit.

Abstract: An optical transceiver, including a coupling assembly and a condensing assembly, is provided. The coupling assembly includes a first surface and a second surface; and multiple first lenses are disposed on the first surface. The condensing assembly includes a fastener, multiple filters, a reflector, and a light passing region; the condensing assembly is fastened to the second surface; the filters are optically aligned with the first lenses separately; the coupling assembly receives light of different wavelengths; and the light of different wavelengths enters the fastener through the multiple filters and is multiplexed or demultiplexed by the reflector and the filters, and multiplexed or demultiplexed light enters the coupling assembly through the light passing region. The optical transceiver provided in the present invention has advantages of low power consumption and high coupling efficiency.

Abstract: A light emitting diode module structural and a manufacturing method thereof are disclosed. The manufacturing method includes the steps as follows. A base and a light emitting diode die are provided. The light emitting diode die may include a first semiconductor layer and a second semiconductor layer. The light emitting diode die is disposed on the base. A buffer layer is formed to cover the light emitting diode die. A first opening and a second opening are formed on the first semiconductor layer and the second semiconductor layer, respectively. The second opening exposes the second semiconductor layer by penetrating the first semiconductor layer. A conductive pattern layer is formed on the buffer layer, and is electrically connected with the first semiconductor layer and the second semiconductor layer via the first opening and the second opening, respectively.

Abstract: A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlxGa1-xN layer (0?X<1) are laminated periodically, the superlattice layer contacting the active layer and having an average refractive index of 2.6 or lower. The In composition of the InGaN layer is lower than that of the InGaN quantum well layer.

Abstract: A method of manufacture of an integrated circuit coupling system includes: forming a waveguide assembly, having a top clad over an open end of an optical core; forming a first photoresist having a base photoresist pattern shape with sloped photoresist sidewalls tapered down to expose a portion of the top clad; forming a recess having clad sidewalls from the portion of the top clad exposed by the base photoresist pattern shape, the clad sidewalls having a shape replicating a shape of the base photo resist pattern shape; and forming an optical vertical insertion area, from the clad sidewalls forming the recess, having a pocket trench, a horizontal step, and a mirror with a reflective material selectively applied to a section of the clad sidewalls and exposing the open end opposite to the mirror, the horizontal step between the mirror and the pocket trench.

Abstract: A lighting device includes a laser providing high brightness coherent light and a light scattering element having luminescent material adapted for converting part of the light from the laser into a different wavelength, and transmitting and scattering part of the light from the laser without conversion. The lighting device may be used as the a light source in a lamp bulb or other light emission device.

Abstract: A method for fabricating an epitaxial structure includes providing a substrate (102, 202, 302, 402) and a heterojunction stack on a first side the substrate, and forming a GaN light emitting diode stack (134) on a second side of the substrate. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AIGaN) layer on the undoped GaN layer. The GaN light emitting diode stack (134) includes an n-type GaN layer (136) over the substrate, a GaN/indium gallium nitride (InGaN) multiple quantum well (MQW) structure (138) over the n-type GaN layer, a p-type AIGaN layer (140) over the n-type GaN/InGaN MQW structure, and a p-type GaN layer (142) over the p-type AIGaN layer.

Abstract: A semiconductor laser module includes: a semiconductor laser outputting a laser light from an output-facet side of a waveguide which has a first narrow portion identical in width, a wide portion wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion between the first narrow portion and the wide portion and increasing in width toward the wide portion, and a second tapered portion between the wide portion and the second narrow portion and decreasing in width toward the second narrow portion; and an optical fiber to which the laser light is input has an optical-feedback unit reflecting a predetermined wavelength of light. The semiconductor laser is enclosed in a package with one end of the optical fiber. The optical-feedback unit has a first optical-feedback unit set at a predetermined reflection center wavelength determining an oscillation wavelength and a second optical-feedback unit.

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a silicon-based base portion having a first primary surface and a silicon-based support structure. The silicon-based support structure includes a mounting end and a distal end opposite the mounting end with the mounting end received by the base portion such that the support structure extends from the first primary surface of the base portion. The support structure includes a recess defined therein to receive the edge-emitting laser diode. The support structure further includes a slit connecting the distal end and the recess to expose at least a portion of a light-emitting edge of the edge-emitting laser diode when the edge-emitting laser diode is received in the support structure.

Abstract: There is provided a surface emitting laser allowing a direction of a far-field pattern (FFP) centroid to be inclined from a normal direction of a substrate providing the surface emitting laser, comprising: a substrate; a lower reflecting mirror, an active layer, an upper reflecting mirror stacked on the substrate; and a surface relief structure located in an upper portion of a light emitting surface of the upper reflecting mirror, the surface relief structure being made of a material allowing at least some beams emitted from the surface emitting laser to be transmitted therethrough, a plurality of regions having a predetermined optical thickness in a normal direction of the substrate being formed in contact with other region in an in-plane direction of the substrate, and a distribution of the optical thickness in the in-plane direction of the substrate is asymmetric to a central axis of the light emitting regions.

Abstract: A communication module according to the present invention includes a substrate, a laser element and a light receiving element provided on a front surface of the substrate and separating from each other, a transparent resin package collectively sealing the laser element and the light receiving element, and a diffusion unit provided to be opposed to a light emitting surface of the laser element at a prescribed distance for diffusing a laser beam emitted by the laser element, while the distance T between the laser element and the light receiving element satisfies the following formula (1): T?t1·tan ?+(t1+t2)·tan ?? . . .

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Abstract: Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.

Abstract: Various embodiments of a multi-laser system are disclosed. In some embodiments, the multi-laser system includes a plurality of lasers, a plurality of laser beams, a beam positioning system, a thermally stable enclosure, and a temperature controller. The thermally stable enclosure is substantially made of a material with high thermal conductivity such as at least 5 W/(m K). The thermally stable enclosure can help maintain alignment of the laser beams to a target object over a range of ambient temperatures.

Abstract: A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a base portion and a support portion. The base portion is made of silicon and includes a first primary surface. The first primary surface includes at least first and second V-notch grooves thereon. The support portion is made of silicon and includes at least first and second edges that are interlockingly received in the first and second V-notch grooves when the support portion is mounted on the base portion.

Abstract: An embodiment is a semiconductor device comprising an optical device over a first substrate, a vertical waveguide on a top surface of the optical device, the vertical waveguide having a first refractive index, and a capping layer over the vertical waveguide, the capping layer configured to be a lens for the vertical waveguide and the capping layer having a second refractive index.

Abstract: A method for producing a laser device comprising: a semiconductor laser (1) which is configured to emit a laser beam; (2), and a lens (3) which is position-adjusted relative to the semiconductor laser (1), wherein the lens (3) is firstly shifted perpendicularly to the expansion direction of the laser beam (2) and is consequently penetrated by the laser beam (2), wherein the optical axis of the lens (3) lies parallel to the expansion direction of the laser beam (2), and the lens (3) is then fastened to a lens holder (5) by a joining connection (4) by flowing material, which solidifies in order to form the joining connection, such that the mobility of the lens (3) perpendicular to the expansion direction of the laser beam (2) is blocked.

Abstract: An Environmentally stable optical fiber mode-locked laser generating device having an achromatic quarter wave plate is disclosed. An optical fiber unit is formed of a polarization maintaining (PM) optical fiber, and a Bragg grating is formed on a first region from one end in direction to the other end, a gain material is doped on a core of a remaining second region. An optical coupling unit provides a pump laser input to one end of the optical fiber unit, and outputs a laser input from the optical fiber unit. A lens unit converts a laser output from the other end of the optical fiber unit and focuses the laser on a certain regime.

Abstract: A semiconductor optical emitting device comprises an at least partially transparent substrate, an active semiconductor structure arranged on a first side of the substrate, and a lens structure formed at least partially within a cavity on a second side of the substrate. Light generated by the active semiconductor structure is emitted through the substrate and the lens structure. The cavity may comprise a bottom surface and a plurality of sidewalls, with the plurality of sidewalls extending upward from the bottom surface to an upper surface of the second side of the substrate, although numerous other cavity shapes are possible. The bottom surface may be convex or concave. The bottom surface and the plurality of sidewalls may form a portion of a sphere with a plane parallel to the upper surface of the second side of the substrate.

Abstract: A laser source assembly for providing an assembly output beam includes a first MIR laser source, a second MIR laser source, and a beam combiner. The first MIR laser source emits a first MIR beam that is in the MIR range and the second MIR laser source emits a second MIR beam that is in the MIR range. Further, the beam combiner spatially combines the first MIR beam and the second MIR beam to provide the assembly output beam. With this design, a plurality MIR laser sources can be packaged in a portable, common module, each of the MIR laser sources generates a narrow linewidth, accurately settable MIR beam, and the MIR beams are combined to create a multiple watt assembly output beam having the desired power.

Abstract: An embodiment is a semiconductor device comprising an optical device over a first substrate, a vertical waveguide on a top surface of the optical device, the vertical waveguide having a first refractive index, and a capping layer over the vertical waveguide, the capping layer configured to be a lens for the vertical waveguide and the capping layer having a second refractive index.

Abstract: A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Abstract: A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.

Abstract: A laser source assembly for providing an assembly output beam includes a first emitter, a second emitter, and a third emitter. The first emitter emits a first beam along a first beam axis that is substantially parallel to and spaced apart from an assembly axis. The second emitter emits a second beam along a second beam axis that is substantially parallel to and spaced apart from the assembly axis. The third emitter emits a third beam along a third beam axis that is substantially parallel to and spaced apart from the assembly axis. The first beam axis, the second beam axis and the third beam axis are positioned spaced apart about and substantially equidistant from the assembly axis.

Abstract: A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr2+ thin film of controllable thickness on the ZnS crystal facets after crystal growth by means of pulse laser deposition or plasma sputtering, thermal annealing of the crystals for effective thermal diffusion of the dopant into the crystal volume with a temperature and exposition time providing the highest concentration of the dopant in the volume without degrading laser performance due to scattering and concentration quenching, and formation of a microchip laser either by means of direct deposition of mirrors on flat and parallel polished facets of a thin Cr:ZnS wafer or by relying on the internal reflectance of such facets. Multiple applications of the laser material are contemplated in the invention.

Abstract: In order to provide a compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged, a light emitting diode that is included in the optical module and emits light in a vertical direction with respect to a principal surface of a semiconductor substrate is provided with a lens integrated into a light emitting region, and a retaining section integrated to surround the light emitting region. Accordingly, readiness in alignment of the light emitting diode and an optical fiber, which guides light emitted from the light emitting diode, with each other is upgraded. Eventually, the compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged can be provided.

Abstract: A photoelectric converting module includes a circuit board, a locating frame fixed on the circuit board, and a photoelectric coupling element. The photoelectric coupling element includes a bottom surface. The bottom surface defines a groove. A shape of the groove coincides with that of the locating frame and a size of the groove is slightly greater than that of the locating frame. The groove receives the locating frame.

Abstract: A system is provided for combining laser light sources. The system includes: a stack of laser diode bar arrays, comprising two or more laser diode bar arrays, each laser diode bar array having multiple laser diodes; a multimode optical fiber; and a plurality of optical elements disposed between the stack of laser diode bar arrays and the multimode optical fiber, configured to direct light from the stack of laser diode bar arrays to the multimode optical fibers, the plurality of optical elements further including: a plurality of fast-axis collimating (FAC) lenses, wherein at least one FAC lens of the plurality of FAC lenses corresponds to each laser diode bar array. At least one FAC lens of the plurality of FAC lenses is misaligned with respect to the corresponding laser diode bar array.