Waveguide Patents (Class 372/64)
  • Patent number: 7230967
    Abstract: A laser waveguide, where the laser waveguide can be formed by electrodes and at least one sidewall in a manner allowing a more compact structure than previously provided. Protrusions in the electrodes allow easier laser starts, and sectional sidewall(s) allow easier fabrication of sidewall(s), decreasing manufacturing costs.
    Type: Grant
    Filed: January 20, 2006
    Date of Patent: June 12, 2007
    Assignee: Videojet Technologies
    Inventor: Nathan Paul Monty
  • Patent number: 7227880
    Abstract: A grating-stabilized semiconductor laser comprises a semiconductor laser gain medium, an integrated low-index waveguide, and a waveguide grating segment providing optical feedback for laser oscillation. The laser may be adapted for multi-mode or single-mode operation. A multiple-mode laser may oscillate with reduced power and/or wavelength fluctuations associated with longitudinal mode wavelength shifts, relative to Fabry-Perot lasers lacking gratings. A single-mode laser may include a compensator, wavelength reference, and detector for generating an error signal, and a feedback mechanism for controlling the compensator for maintaining the laser wavelength locked to the reference. The laser may include means for altering, enhancing, tuning, and/or stabilizing the waveguide grating reflectivity spectral profile. The laser may be adapted for optical transverse-coupling to another waveguide.
    Type: Grant
    Filed: May 26, 2005
    Date of Patent: June 5, 2007
    Assignee: Xponent Photonics Inc.
    Inventors: Henry A. Blauvelt, David W. Vernooy, Joel S. Paslaski
  • Patent number: 7184625
    Abstract: An optical wavelength grating coupler incorporating one or more distributed Bragg reflectors (DBR) or other reflective elements to enhance the coupling efficiency thereof. The grating coupler has a grating comprising a plurality of scattering elements adapted to scatter light along a portion of an optical path, and the one or more DBRs are positioned with respect to the grating such that light passing through the grating towards the substrate of the grating coupler is reflected back by DBRs toward the grating. The DBR comprises a multilayer stack of various materials and may be formed on the substrate of the grating coupler. The grating coupler may include a gas-filled cavity, where the cavity is formed by a conventional etching process and is used to reflect light toward the grating. The grating coupler may also incorporate an anti-reflection coating to reduce reflective loss on the surface of the grating.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: February 27, 2007
    Assignee: Luxtera, Inc
    Inventors: Lawrence C. Gunn, III, Thierry J. Pinguet, Maxime J. Rattier
  • Patent number: 7177337
    Abstract: A semiconductor optical integrated circuit includes: a semiconductor substrate; a light reflecting portion and a gain region, on the semiconductor substrate; a first optical waveguide connecting the reflecting portion and the gain region; and a second optical waveguide in conjunction with the first optical waveguide and having a larger optical absorptance than the first optical waveguide.
    Type: Grant
    Filed: December 19, 2003
    Date of Patent: February 13, 2007
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kazuhisa Takagi
  • Patent number: 7177336
    Abstract: A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2<(nc1, nc3)<ne<(ns, ng) is satisfied.
    Type: Grant
    Filed: March 26, 2003
    Date of Patent: February 13, 2007
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Mototaka Taneya, Yukio Yamasaki, Shigetoshi Ito
  • Patent number: 7157296
    Abstract: A planar photonic bandgap structure includes a substrate and a suspended membrane with holes. A waveguiding film is applied directly on and registered with the membrane so as to avoid the holes. The film has an index of refraction which is higher than an index of refraction of the membrane to allow a waveguiding function to occur within the film. A method of forming a planar photonic bandgap structure includes applying first and second films on a substrate and exposing a pattern of a plurality of holes on the second film. The exposed pattern is developed using a solvent where the dissolution rate of the first film is greater than a dissolution rate of the second film. A waveguiding layer is applied onto a top surface of a suspended membrane such that the layer has an index of refraction greater than an index of refraction of the suspended membrane.
    Type: Grant
    Filed: January 16, 2004
    Date of Patent: January 2, 2007
    Assignee: University of Delaware
    Inventors: Janusz Murakowski, David Pustai, Dennis W. Prather
  • Patent number: 7151881
    Abstract: An optical circuit including a semiconductor substrate; an optical waveguide formed in or on the substrate; and an optical detector formed in or on the semiconductor substrate, wherein the optical detector is aligned with the optical waveguide so as to receive an optical signal from the optical waveguide during operation, and wherein the optical detector has: a first electrode; a second electrode; and an intermediate layer between the first and second electrodes, the intermediate layer being made of a semiconductor material characterized by a conduction band, a valence band, and deep level energy states introduced between the conduction and valence bands.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: December 19, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Lawrence C. West, Thomas P. Pearsall, Francisco A. Leon, Stephen Moffatt
  • Patent number: 7126973
    Abstract: A one dimension all-metal slab waveguide gas laser comprises a slab waveguide gas discharge area and an optical resonator disposed in a metal vacuum chamber. The gas discharge area is formed by a top and a bottom metal electrodes and metal supporting blocks insolated with the electrodes. A metal liner plate and a metal press plate are sequentially disposed on upside of the metal electrodes. A metal supporting plate is disposed at underside of the metal electrodes. The metal top electrodes are connected with a supply power through link pins of the metal electrodes. An output mirror and a feedback mirror are respectively arranged at two sides of the optical resonator. An output window of the laser is disposed in the vacuum chamber.
    Type: Grant
    Filed: August 31, 2004
    Date of Patent: October 24, 2006
    Assignee: Beijing BDHlaser Science & Technology Inc. Ltd.
    Inventors: Jianguo Xin, Jiangxing Wu, Zhiyuan Zhang, Weiping Wang
  • Patent number: 7095762
    Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.
    Type: Grant
    Filed: July 26, 2005
    Date of Patent: August 22, 2006
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koichiro Tanaka
  • Patent number: 7065121
    Abstract: Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100 W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: June 20, 2006
    Assignee: GSI Group Ltd.
    Inventors: David M. Filgas, Frank Haran, Andreas Mank, John Robertson
  • Patent number: 7050475
    Abstract: A laser waveguide, where the laser waveguide can be formed by electrodes and at least one sidewall in a manner allowing a more compact structure than previously provided. Protrusions in the electrodes allow easier laser starts, and sectional sidewall(s) allow easier fabrication of sidewall(s), decreasing manufacturing costs.
    Type: Grant
    Filed: October 27, 2003
    Date of Patent: May 23, 2006
    Assignee: LiteLaser LLC
    Inventor: Nathan Paul Monty
  • Patent number: 7046709
    Abstract: A pulsed, Q-switched, waveguide CO2 laser includes a plurality of waveguide channels formed in a block of a beryllium oxide ceramic material and is operated at a wavelength between about 9.2 and 9.7 micrometers. The laser has an output power up to 55% greater than that of a similarly configured laser, operated at the same wavelength and pulse conditions, but wherein the waveguide channels are formed in a block of an alumina ceramic material.
    Type: Grant
    Filed: November 18, 2003
    Date of Patent: May 16, 2006
    Assignee: Coherent, Inc.
    Inventors: Vernon Seguin, Leon Newman, John Kennedy
  • Patent number: 7023886
    Abstract: Embodiments of a wavelength tunable optical coupler, integrated optical components, and lasers are disclosed. The tunable optical coupler, the integrated optical components, and the lasers include thermo-optic organic material that has an index of refraction which can quickly vary in response to changes in temperature. By controlling the temperature in the thermo-optic organic material through the use of heaters or coolers, the optical coupler, the integrated optical components, and the lasers can be quickly and selectively tuned over a broad range of wavelengths with high spectral selectivity.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: April 4, 2006
    Assignee: Intel Corporation
    Inventor: David A. G. Deacon
  • Patent number: 7003010
    Abstract: A laser system capable of producing multiple groups of output wavelengths is disclosed. In one embodiment, an optical fiber bundle doped with erbium (Er) or erbium/ytterbium (Er/Yb) is perpendicularly attached to an optical device, which serves as a guided-mode resonance feedback mirror, to form a fiber laser matrix. The optical device contains a substrate layer, a waveguide layer, and a grating layer, with non-uniform device parameters. The wavelength of the resonant light and its corresponding laser light of an individual optical fiber depends upon the parameters in the location on the optical device where the fiber is attached. In another embodiment, a plurality of active waveguides in a body are attached to an optical device to form a diode-pumped crystal laser matrix with multi-group output wavelengths. The invented laser system is capable of generating laser sources of large channel capacity for the optical network especially for the dense wavelength division multiplexing (DWDM) system.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: February 21, 2006
    Inventor: Zhongshan Liu
  • Patent number: 6999490
    Abstract: A waveguide gas laser includes an enclosure filled with a lasing gas. A ceramic block is provided with one or more waveguide channels. At least one of the waveguide channels includes an open region which is in fluid communication with a waveguide channel. Lasing gas in the enclosure fills the waveguide channels and the lateral extension. An electric field is applied across the lateral extension of the waveguide channel while simultaneously applying a smaller electric field across the waveguide channel. The electric field across the lateral extension ignites a discharge in the lateral extension that spreads into the lasing gas in the waveguide channel. The electric field across the waveguide channel is sufficient to sustain the discharge in the lasing in the waveguide channel.
    Type: Grant
    Filed: July 21, 2003
    Date of Patent: February 14, 2006
    Assignee: Coherent, Inc.
    Inventors: John Kennedy, Lanny Laughman, Anthony DeMaria, Ronald Straayer
  • Patent number: 6944192
    Abstract: An optical device (10) includes a broad area laser (72) for lasing at a first wavelength (64), a multimode active-doped tapered waveguide laser (6); and a multimode passive planar mode transformer (118) coupling and tapering from the broad area laser (72) to the multimode active-doped tapered waveguide laser (6).
    Type: Grant
    Filed: June 6, 2003
    Date of Patent: September 13, 2005
    Assignee: Corning Incorporated
    Inventors: Michel Prassas, Luis A. Zenteno
  • Patent number: 6944195
    Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.
    Type: Grant
    Filed: December 10, 2002
    Date of Patent: September 13, 2005
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Koichiro Tanaka
  • Patent number: 6934313
    Abstract: A method of making permanent adjustments to the resonant cavity of a laser device in order to match its free spectral range to a specified frequency interval involves monitoring the optical output produced during laser operation or cavity illumination with diagnostic light, determining the free spectral range from the monitored output, and then permanently modifying the effective refractive index of an intracavity waveguide segment of the laser device according to the determined free spectral range obtained from the monitoring step until the desired match is achieved. The permanent index changes can be done in several ways, including illumination of the intracavity segment with an energetic beam (e.g. UV light) to induce a chemical alteration in the waveguide material, such as polymer cross-linking in the waveguide cladding. Evaporative deposition or ablative removal of intracavity waveguide material would also produce the desired permanent modifications.
    Type: Grant
    Filed: November 4, 1999
    Date of Patent: August 23, 2005
    Assignee: Intel Corporation
    Inventor: David A. G. Deacon
  • Patent number: 6914918
    Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: July 5, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato
  • Patent number: 6909729
    Abstract: Optical components including a laser based on a dielectric waveguide extending along a waveguide axis and having a refractive index cross-section perpendicular to the waveguide axis, the refractive index cross-section supporting an electromagnetic mode having a zero group velocity for a non-zero wavevector along the waveguide axis.
    Type: Grant
    Filed: October 25, 2001
    Date of Patent: June 21, 2005
    Assignee: Massachusetts Institute of Technology
    Inventors: Mihai Ibanescu, John D. Joannopoious, Yoel Fink, Steven G. Johnson, Shanhui Fan
  • Patent number: 6891874
    Abstract: The invention relates to a laser amplifier system consisting of a solid body, which comprises a laser-active medium, of a pumping radiation source for generating a pumping radiation field, which repeatedly permeates the solid body, and of a focusing system. Said focusing system generates a number of different branches of the pumping radiation field that enter the solid body and converts at least one branch emerging from the solid body into one of the branches which enter the solid body and which are different from the emerging branch. The aim of the invention is to improve a laser amplifier system of the aforementioned type in order to be able to generate the highest possible pumping power density in the solid body while requiring the smallest possible amount of complexity.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: May 10, 2005
    Assignee: Universitaet Stuttgart Institut fuer Strahlwerkzeuge
    Inventors: Steffen Erhard, Adolf Giesen, Christian Stewen
  • Patent number: 6888854
    Abstract: An optical monitor device and method are presented aimed at providing low-loss monitoring of an optical signal confined in an optical guiding structure. An optical resonator structure is placed spatially adjacent to the guiding structure and is optically coupled to the guiding structure, and an optical detector is optically coupled to the resonator structure. The coupling between these elements is such that the coupling of light from the guiding structure to the optical resonator is smaller then the coupling of light from the resonator to the optical detector.
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: May 3, 2005
    Assignee: Lambda Crossing Ltd.
    Inventor: Moti Margalit
  • Patent number: 6879432
    Abstract: An optical device having a photonic crystal structure is provided. The photonic crystal structure includes a plurality of rods/holes, a plurality of light input ports, a plurality of light output ports, a light path; and a defect of rod/hole located in the light path. The photonic crystal structure of the optical device can be optimized to adjust the powers of the lights of the output ports, and thus the output powers having identical intensities can also be achieved. When a plurality of lights is launched via the input ports, the powers and the phases of the lights of the output ports can also be optimized.
    Type: Grant
    Filed: February 17, 2004
    Date of Patent: April 12, 2005
    Assignee: National Central University
    Inventors: Chii-Chang Chen, Hung-Ta Chien, Pi-Gang Luan
  • Patent number: 6853668
    Abstract: CO2 slab laser having a gas-filled tubular housing, sealed off at both ends by end pieces, which accommodates two overlapping electrodes extending into the tubular housing and mirrors arranged in the region of the electrodes, where each of the two end pieces holds an electrode, the mirrors are arranged stationary relative to the electrodes and the electrodes, jointly with the mirrors, are adjustable relative to one another.
    Type: Grant
    Filed: November 9, 1999
    Date of Patent: February 8, 2005
    Inventor: Norbert Taufenbach
  • Patent number: 6839365
    Abstract: A light wavelength converting element which can reduce an amount of light fed-back to a semiconductor laser. The light wavelength converting element converts a wavelength of a fundamental wave which enters from a first end surface side of an optical waveguide to thereby emit a converted wavelength wave from a second end surface side thereof. The second end surface is inclined with respect to the side surface of the optical waveguide. Also provided is a wavelength stabilized laser having a semiconductor laser, a device which feeds a laser beam emitted from the semiconductor laser back to the semiconductor laser, and a band-pass filter. An optical length between the semiconductor laser and the device is made to be longer than a coherent length of the semiconductor laser, thus improving linearity of a current vs. light output characteristic.
    Type: Grant
    Filed: October 30, 2000
    Date of Patent: January 4, 2005
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Shinichiro Sonoda, Hideo Miura, Masami Hatori
  • Patent number: 6839488
    Abstract: The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalities including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.
    Type: Grant
    Filed: September 10, 2002
    Date of Patent: January 4, 2005
    Assignee: California Institute of Technology
    Inventor: Lawrence Cary Gunn, III
  • Patent number: 6816531
    Abstract: A high power, single lateral mode semiconductor laser has a waveguide with regions of different widths coupled by a tapered region. The laser has a laterally confining optical waveguide having a highly reflecting first end and a second end. The optical waveguide has a first portion extending from the first end and a second portion extending from the second end. The first and second portions are coupled by a tapered waveguide. A width of the first portion is less than a width of the second portion. The first portion filters lateral optical modes higher than a fundamental lateral optical mode. An output is emitted from the second end of the optical waveguide.
    Type: Grant
    Filed: March 3, 2000
    Date of Patent: November 9, 2004
    Assignee: JDS Uniphase Corporation
    Inventors: Victor Rossin, Ross A. Parke, Jo S. Major
  • Publication number: 20040218650
    Abstract: A laser waveguide, where the laser waveguide can be formed by electrodes and at least one sidewall in a manner allowing a more compact structure than previously provided. Protrusions in the electrodes allow easier laser starts, and sectional sidewall(s) allow easier fabrication of sidewall(s), decreasing manufacturing costs.
    Type: Application
    Filed: October 27, 2003
    Publication date: November 4, 2004
    Inventor: Nathan Paul Monty
  • Patent number: 6804284
    Abstract: An optical element holding and extraction device is provided. The device includes an optical element, an optical element holder having a tubular gripping portion and a tubular extraction portion connected at one end to the tubular gripping portion, and a retainer that is slideably carried on the tubular extraction portion. The diameter of the tubular extraction portion is less than the tubular gripping portion. In addition, the tubular gripping portion grips the peripheral edge of the optical clement. The device may be used in a variety of gas lasers, including excimer lasers.
    Type: Grant
    Filed: February 22, 2000
    Date of Patent: October 12, 2004
    Assignee: TuiLaser AG
    Inventors: Hans Kodeda, Helmut Frowein
  • Patent number: 6798815
    Abstract: Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge waveguide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved by combining this approach with a laser diode design termed “unpumped end sections” and described in copending U.S. patent application Ser. No. 09/852,994, entitled “High Power Semiconductor Laser Diode”.
    Type: Grant
    Filed: April 24, 2002
    Date of Patent: September 28, 2004
    Assignee: Bookham Technology PLC
    Inventors: Berthold Schmidt, Susanne Pawlik, Norbert Lichtenstein
  • Patent number: 6798816
    Abstract: A folded waveguide CO2 laser includes a plurality of waveguides arranged in a zigzag pattern with ends thereof overlapping. The laser includes a resonator having an axis extending through the plurality of waveguides. At least a portion of at least one of the waveguides has a uniform minimum width selected cooperative with the height of the waveguide and the laser wavelength such that the resonator can oscillate in only a single mode. At least a portion of one of the waveguides is tapered such that its width increases in one direction along the resonator axis. Tapering one or more of the waveguides provides that the total waveguide area and potential power output of the laser is greater than that of a zigzag arrangement of waveguides having the same total length waveguides each having a uniform width equal to the minimum width of the waveguide in the tapered waveguide arrangement.
    Type: Grant
    Filed: October 21, 2002
    Date of Patent: September 28, 2004
    Assignee: Coherent, Inc.
    Inventors: Anthony J. DeMaria, Vernon A. Seguin, Lanny Laughman
  • Patent number: 6795453
    Abstract: A multi-wavelength laser array where each element can be individually heated for fine tuning. The wavelength of the array can be coarsely tuned by selecting one laser of a particular wavelength for the array, and then applying a heating current to fine-tune the wavelength. The lasers can be phase shifted DFBs for high single-mode yield. The heating can be performed monolithic to the device by passing current longitudinally through the p-type stripe, while the injection current passes vertically through the stripe. Alternatively an adjacent laser to the one selected can be activated, though not fiber coupled, such that the thermal load is sufficient to tune the selected laser. Thin film heaters placed on top or adjacent to the cavity can also be used. To minimize continuous power consumption, the on-chip heater can be used initially to tune the laser while the TE cooler responds on a slower time scale.
    Type: Grant
    Filed: October 30, 2001
    Date of Patent: September 21, 2004
    Assignee: Santur Corporation
    Inventors: Bardia Pezeshki, Ed Vail, Gideon Yoffe
  • Patent number: 6792010
    Abstract: According to the present invention, laser performance is improved by appropriately matching the spectral periods of various etalons within the laser cavity. A first embodiment of the invention is a discretely tunable external cavity semiconductor laser where a grid fixing etalon is present in the laser cavity, the grid fixing etalon free spectral range (FSR) is a whole number multiple of the laser cavity FSR, and the grid fixing etalon FSR is a whole number multiple of the chip etalon FSR. A second embodiment of the invention is a fixed wavelength external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR, and a mode suppressing etalon is inserted into the laser cavity such that the mode suppressing etalon FSR is a whole number multiple of the chip etalon FSR. A third embodiment of the invention is a tunable external cavity semiconductor laser where the chip etalon FSR is a whole number multiple of the laser cavity FSR.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: September 14, 2004
    Assignee: Picarro, Inc.
    Inventors: Serguei Koulikov, Grzegorz Pakulski, Barbara A. Paldus, Chris W. Rella, Jinchun Xie
  • Patent number: 6788722
    Abstract: The above discussed and other drawbacks and deficiencies of the prior art are overcome or alleviated by a laser of the present invention. In accordance with the present invention the laser comprises a housing defining a plurality of compartments therein, a folded waveguide disposed within the housing, the folded waveguide defining a plurality of channels having a substantially rectangular cross section for guiding a laser beam, a plurality of electrodes disposed in the plurality of compartments and juxtaposed along opposite surfaces of the waveguide and at least one power supply connected to the plurality of electrodes. The channels having a prescribed width to height ratio for a prescribed channel length for a given Fresnel number. At least one optical housing is provided. The optical housing is mounted to the laser housing, the optical housing including a plurality of beam turning mechanisms disposed within a plurality of compartments accessible for adjusting the beam turning mechanisms.
    Type: Grant
    Filed: July 10, 2000
    Date of Patent: September 7, 2004
    Assignee: Coherent, Inc.
    Inventors: John T. Kennedy, Richard A. Hart, Leon A. Newman, Anthony J. DeMaria
  • Patent number: 6785304
    Abstract: A waveguide device in the form of either a solid-state laser or amplifier is divided into separate pumping and output mode control sections along at least one direction of the device by leaving a portion of a core of the device unclad or by depositing appropriate coatings on different sections of the core or by contacting/bonding materials with different refractive indices to different sections of the core or by a combination of these approaches. The core has a pump input surface for receiving pumping radiation at a pumping wavelength and one or more output surfaces for emitting a laser beam at an output wavelength. When used as an amplifier, the core also has a laser input surface which may be the same as one of the output surfaces.
    Type: Grant
    Filed: July 24, 2001
    Date of Patent: August 31, 2004
    Assignee: GSI Lumonics, Inc.
    Inventor: David M. Filgas
  • Patent number: 6775316
    Abstract: Method and apparatus for integrating a VCSEL with a SOA, comprising positioning a collimating lens adjacent to the output of the VCSEL, positioning a focusing lens adjacent to the input of the SOA, and positioning a movable lens between the collimating lens and the focusing lens, where the movable lens has a focal length significantly longer than the focal length of the focusing lens; and moving the movable lens relative to the focusing lens so as to adjust the focusing spot on the input of the SOA.
    Type: Grant
    Filed: February 20, 2002
    Date of Patent: August 10, 2004
    Assignee: Nortel Networks Ltd.
    Inventors: Daryoosh Vakhshoori, Masud Azimi
  • Patent number: 6744802
    Abstract: In a slot array structure, electromagnetic wave emission which is uniform as a whole over the length of a laser tube is realized to allow uniform laser emission with minimum energy loss. Slots (10) are formed at a predetermined pitch in a long end face (H plane) of each waveguide (1) along a central line (m) in the longitudinal direction of the H plane to be alternately located on the left and right sides of the central line (m) and spaced apart from the central line (m) by a distance (d).
    Type: Grant
    Filed: February 24, 2000
    Date of Patent: June 1, 2004
    Assignees: Canon Kabushiki Kaisha
    Inventors: Tadahiro Ohmi, Nobumasa Suzuki, Hiroshi Ohsawa, Nobuyoshi Tanaka, Toshikuni Shinohara, Masaki Hirayama
  • Patent number: 6741628
    Abstract: The present invention is a micro-cavity laser and methods related thereto. In the preferred embodiments, the micro-cavity laser comprises a laser pump signal in a fiber waveguide which is optically coupled to a micro-cavity resonator through a fiber taper. The micro-resonator includes a gain medium necessary for lasing action. The lasing frequency can be determined based upon the gain medium, the micro-cavity structure, as well as frequency selective elements such as gratings incorporated into the micro-cavity. The tapered fiber waveguide permits the micro-cavity laser to operate without a break in the fiber waveguide. In the preferred embodiments, the micro-cavity resonator is constructed from a doped silica or a semiconductor material. The present invention provides a compact laser with improved emissions and coupling efficiencies. Alternative configurations include multiple micro-cavities on a single fiber waveguide and/or utilizing multiple waveguides attached to one or more micro-cavity resonators.
    Type: Grant
    Filed: March 9, 2001
    Date of Patent: May 25, 2004
    Assignees: California Institute of Technology, cQuint Communications Corporation
    Inventors: Oskar Painter, Ming Cai, Kerry J. Vahala, Peter C. Sercel
  • Patent number: 6738396
    Abstract: Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.
    Type: Grant
    Filed: November 13, 2002
    Date of Patent: May 18, 2004
    Assignee: GSI Lumonics Ltd.
    Inventors: David M. Filgas, Frank Haran, Andreas Mank, John Robertson
  • Patent number: 6711200
    Abstract: Room temperature lasing from optically pumped single defect in a two-dimensional photonic bandgap crystal is illustrated. The high Q optical microcavities are formed by etching an array of air holes into a half wavelength thick multiquantum well waveguide. Defects in the two-dimensional photonic crystal or used to support highly localized optical modes with volumes ranging from 2 to 3 (&lgr;/2n)3. Lithographic tuning of the air hole radius and the lattice spacing is used to match the cavity wavelength to the quantum well gain peak, as well as to increase cavity Q. The defect lasers were pumped with 10-30 nsec pulse of 0.4-1 percent duty cycle. The threshold pump power was 1500 milliwatts. The confinement of the defect mode energy to a tiny volume and the enhancement of the spontaneous emission rate make the defect cavity an interesting device for low threshold, high spontaneous emission coupling factor lasers, and high modulation rate light emitting diodes.
    Type: Grant
    Filed: September 6, 2000
    Date of Patent: March 23, 2004
    Assignee: California Institute of Technology
    Inventors: Axel Scherer, Oskar Painter
  • Patent number: 6711201
    Abstract: Truncated ridge waveguide for all-metal gas laser excitation according to present invention consists of a metal tube and a pair of endplates forming a vacuum envelope for containing a laser gas, a laser resonator mirrors placed on the endplates at the opposite ends of the tube and at least one elongated metal ridge electrode located within and conductively connected to the metal tube by at least one metal post to define a truncated ridge waveguide. The tube and the ridge electrode are shaped and positioned so as to define at least one elongated laser bore channel and a low thermal resistance and high capacitance ridge-to-tube gap therebetween. The ridge electrode and metal posts form truncated ridge to increase the ridge waveguide structure inductance, which together with high capacitance of the electrode-to-tube gap decreases the resonant frequency from the microwave band into the VHF band (30-300 MHz), which is the most suitable for CO2 laser excitation.
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: March 23, 2004
    Inventor: Peter Vitruk
  • Patent number: 6697392
    Abstract: A single wavelength laser module utilizes difference-frequency light and includes a first laser device for oscillating light having a first wavelength and a second laser device arranged parallel to the first laser device for oscillating light having a second wavelength, an optical waveguide device arranged next to the output ends of the first and the second laser device, and an output optical fiber arranged next to the output end of the optical waveguide device. The optical waveguide device includes a coupling waveguide region and an optical wavelength conversion region. The coupling waveguide region combines light having the first wavelength and the second wavelength into a single waveguide by being optically coupled directly to the first and the second laser device. The optical wavelength conversion region includes an optical waveguide for generating difference-frequency light between the first wavelength and the second wavelength.
    Type: Grant
    Filed: December 18, 2002
    Date of Patent: February 24, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Masato Ishino
  • Patent number: 6693312
    Abstract: A photo-optical transmitter assembly is produced in the following manner: a glass wafer is fixed onto a transparent submount and a V-shaped recess is subsequently created between optical prism elements using targeted sawcuts. A rod-shaped element with a reflective coating is inserted into the V-shaped recess. A laser beam from a semiconductor laser is thus deflected by 90° on the rod-shaped element with the reflective coating and traverses the submount.
    Type: Grant
    Filed: July 22, 2002
    Date of Patent: February 17, 2004
    Assignee: Infineon Technologies AG
    Inventors: Ralf Dietrich, Mathias Kämpf, Wolfgang Gramann, Martin Weigert
  • Patent number: 6687267
    Abstract: A tunable laser having a tunable multi-mode interference (MMI) section is provided. The tunable laser also includes a gain section including an active waveguide, a phase section including a transparent waveguide, and a sampled grating section including a waveguide having a sampled Bragg grating written thereon or below. Each section is controlled via current injection. More specifically, the MMI section provides coarse tuning, the sampled grating section provides medium tuning, and the phase section provides fine tuning independence upon a current injected thereinto. The gain section provides optical gain. The configuration is relatively simple to control and easy to fabricate.
    Type: Grant
    Filed: February 4, 2003
    Date of Patent: February 3, 2004
    Assignee: JDS Uniphase Corporation
    Inventor: Heino Bukkems
  • Patent number: 6683711
    Abstract: A wavelength selective light source is disclosed. The wavelength selective light source comprises a broadband light source producing light having a plurality of wavelengths and a demultiplexer that receives the light and separates at least one of the plurality of wavelengths from said light. Further, a multiplexer is included for coupling the at least one of said plurality of wavelengths into an output waveguide. Finally, a semiconductor optical amplifier is provided that receives the at least one of the plurality of wavelengths from the output waveguide and amplifies the at least one of the plurality of wavelengths.
    Type: Grant
    Filed: December 23, 2002
    Date of Patent: January 27, 2004
    Assignee: Integrated Optics Communications Corporation
    Inventors: Jianjun Zhang, Peiching Ling, Jinliang Chen, Ming Xu
  • Patent number: 6671425
    Abstract: The present invention relates to an integrated light source having first and second optical waveguides defining a first optical coupling region for coupling light therebetween. At least one of the optical waveguides includes a gain medium configured to emit light upon irradiation. The light source also includes a first acoustic wave source to subject the first optical coupling region to acoustic waves having a longitudinal frequency &ohgr;AC1, whereby a frequency of light propagating along one of the first and second waveguides differs from a frequency of light propagating along the other waveguide by an amount by an amount &ohgr;AC1.
    Type: Grant
    Filed: June 18, 2002
    Date of Patent: December 30, 2003
    Assignee: CeLight
    Inventors: Jacob B. Khurgin, Nadejda Reingand, Isaac Shpantzer, Israel Smilanski, Pak Shing Cho
  • Patent number: 6665321
    Abstract: A method for selecting free spectral ranges (FSR) of intra-cavity optics to optimize reliability of the channel switching mechanism and corresponding apparatus. In particular, the optimal relationship between the FSR of the internal etalon and the FSR of the laser cavity is derived. For the external cavity diode lasers (ECDL) the optimal relationship between the FSR of the internal etalon and the FSR of the gain chip is also derived. Equations are derived for selecting free spectral ranges of various optical cavities so as to create a locally commensurate condition under which the relative position of the lasing mode with respect to the transmission peak of the laser's tunable filter (e.g., etalon plus channel selector) does not change when the laser hops between adjacent channels.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: December 16, 2003
    Assignee: Intel Corporation
    Inventors: Sergei L. Sochava, Andrew Daiber, Mark McDonald
  • Patent number: 6665322
    Abstract: Apparatus and method for controlling the length of a laser cavity comprises a laser diode that is configured to produce a beam of energy, the laser diode has a first end and an output end, the first end being in optical communication with a highly reflective mirror. A wave guide having a receiving end and a transmission end is also provided, with the wave guide being comprised of an electro-optical material, wherein the receiving end is in optical communication with the output end, and the transmission end is in optical communication with an output coupler. A plurality of electrodes are disposed along a longitudinal axis of the wave guide, wherein the voltage on each electrode is independently controlled to alter the index of refraction of the wave guide at a position adjacent each electrode. A polarizer is also provided with respect to the transmission end, with the polarizer configured to attenuate the beam of energy.
    Type: Grant
    Filed: March 19, 2002
    Date of Patent: December 16, 2003
    Assignee: San Jose Systems Inc.
    Inventor: Bruce Robert Woodley
  • Patent number: 6643313
    Abstract: A method for forming a folded laser and associated laser device includes providing a waveguide substrate, micromachining the waveguide substrate to form a folded waveguide structure including a plurality of intersecting folded waveguide paths, forming a single fold mirror having a plurality of facets which bound all ends of said waveguide paths except those reserved for resonator mirrors, and disposing a pair of resonator mirrors on opposite sides of the waveguide to form a lasing cavity. A lasing material is provided in the lasing cavity. The laser can be sealed by disposing a top on the waveguide substrate. The laser can include a re-entrant cavity, where the waveguide substrate is disposed therein, the re-entrant cavity including the single fold mirror.
    Type: Grant
    Filed: May 4, 2001
    Date of Patent: November 4, 2003
    Assignee: UT Battelee, LLC
    Inventor: Donald P. Hutchinson
  • Patent number: 6625187
    Abstract: The semiconductor optical device is provided with an optical waveguide part and an optical amplification part respectively provided on the GaAs semiconductor substrate. The optical amplification part includes at least one semiconductor optical amplifier. The optical waveguide part includes optical elements including optical waveguides. The optical waveguides are optically connected to the semiconductor optical amplifier. The semiconductor optical amplifier is provided with an active layer including a GaxIn1−xNyAs1−y semiconductor, a first conductive type clad layer and a second conductive type clad layer respectively with the active layer between them. The optical waveguides are respectively provided with a core semiconductor layer including at least either of a GaInNAs semiconductor or a GaAs semiconductor, a first clad semiconductor layer and a second clad semiconductor layer respectively with the core semiconductor layer between them.
    Type: Grant
    Filed: November 17, 2000
    Date of Patent: September 23, 2003
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Nobuyuki Ikoma, Akira Ishida, Shigenori Takagishi, Mitsuo Takahashi, Tsukuru Katsuyama, Masayuki Shigematsu