Semiconductor Patents (Class 372/75)
  • Publication number: 20080253419
    Abstract: A switching mechanism (6) and a diode pumped laser system (1) incorporating the switching mechanism (6) that allows a single diode laser pump source (2) to be selectively directed to one of two or more resonant laser cavities (11a,11n). The switching mechanism (6) comprises an optical element that is movable between a first position that directs the output of the diode laser (2) along a Diode first path (8a) and a second position that directs the output of the lase diode along a second path (8n).
    Type: Application
    Filed: July 10, 2002
    Publication date: October 16, 2008
    Inventor: Dmitri Feklistov
  • Publication number: 20080247438
    Abstract: A gain-module for a laser resonator has an elongated gain-element located in an diffusely reflective cylindrical enclosure having an elongated entrance slit for admitting pump radiation. Pump radiation is supplied by two diode-laser arrays assemblies each including a fast-axis collimating lens. Propagation axes of the diode-laser array assemblies are at an angle to each other. The propagation axes extend through the entrance slit into the enclosure without being intercepted by the gain-element and with the gain-element being located between the propagation-axes.
    Type: Application
    Filed: April 5, 2007
    Publication date: October 9, 2008
    Inventors: Jihua Du, C. David Nabors, Murray K. Reed
  • Patent number: 7430231
    Abstract: Solid-state lasers pumped by incoherent or partially coherent, monochromatic light sources such as high power VCSEL arrays. Efficient and uniform injection of pumping energy into gain medium is achieved through spectral match of the pump source with the gain medium absorption and multi-bounce reflections of unabsorbed pump light in a diffusing pump chamber. One preferred embodiment of the diffusing pump chamber is a hollow cylinder coaxially surrounding the gain medium. One or more transparent windows, slit-shaped or otherwise, for transmission of pump light are evenly distributed around the perimeter of the chamber and are parallel to the axis. Another preferred embodiment of the diffusing pump chamber is a highly reflecting compound parabolic concentrator. A 2-D VCSEL array is employed as the pump source and the gain medium is located at the focusing point of the chamber.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: September 30, 2008
    Inventors: Ningyi Luo, Sheng-Bai Zhu
  • Patent number: 7418023
    Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: August 26, 2008
    Assignee: FUJIFILM Corporation
    Inventors: Hisashi Ohtsuka, Yoji Okazaki, Takayuki Katoh
  • Patent number: 7418024
    Abstract: Provided is a vertical external cavity surface emitting laser (VECSEL) including: a bottom DBR mirror formed on a substrate; an RPG layer formed on the bottom DBR layer; a capping layer formed on the RPG mirror; an optical pump irradiating a pump beam onto a surface of the capping layer; and an external cavity mirror installed on an external surface of a stacked layer corresponding to the bottom DBR mirror. The RPG layer includes: a plurality of first barrier layers periodically formed on nodes of a standing wave and formed of a material having a larger energy band gap width than that of the pump beam; and a plurality of gain layers including a plurality of QW layers formed of InGaAs and disposed between the first barrier layers, and a plurality of second barrier layers disposed on upper and lower portions of the QW layers.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: August 26, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-sung Kim, Taek Kim, Heon-su Jeon
  • Patent number: 7411990
    Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: August 12, 2008
    Assignee: FUJIFILM Corporation
    Inventors: Hisashi Ohtsuka, Yoji Okazaki, Takayuki Katoh
  • Patent number: 7403554
    Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser-crystal or optical fiber is excited with a GaN-based compound laser diode.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: July 22, 2008
    Assignee: FUJIFILM Corporation
    Inventors: Hisashi Ohtsuka, Yoji Okazaki, Takayuki Katoh
  • Publication number: 20080151946
    Abstract: There is provided a solid-state laser apparatus, including a solid-state active element (4) having major surfaces and first and second edges (10,12) oppositely disposed to each other, the first edge (10) being flat and the second edge (12) being constituted by first and second perpendicularly disposed surfaces (12) or having first and second perpendicularly disposed surfaces (12) located adjacent to the second edge, a back reflector (16) and an output coupler (18) located at, or adjacent to, the first edge (10). Light induced in the cavity forms two parallel beams passing therethrough, by means of a first beam which is reflected by the back reflector (16) towards a first of the perpendicularly disposed surfaces and being folded to pass on to the second surface, to be further folded and to proceed towards the first edge (10). A saturable absorber (14) may be attached to the first edge (10).
    Type: Application
    Filed: February 27, 2006
    Publication date: June 26, 2008
    Applicant: ELBIT SYSTEMS ELECTRO-OPTICS ELOP LTD.
    Inventors: Nissim Zafrani, Yuval Artstein
  • Patent number: 7388709
    Abstract: A multiple path light source has a first and second laser source that generate low power continuous wave laser beam at wavelength ?1 and ?2 respectively. A pump laser source generates a high power pulsed narrow linewidth laser beam at wavelength ?0. A first pair of DFGs convert the low power continuous laser beams at ?1 and ?2 to high peak power pulsed laser beams at wavelengths ?1 and ?2, and generate pulsed laser beams at wavelength ?1DFG=?1*?0/(?1??0) and ?2DFG=?2*?0/(?2??0). A second pair of DFGs receives the high peak power pulsed laser beams at ?1 and ?2 and the pulsed laser beams at ?1DFG and ?2DFG and generates laser beams at wavelength ?3=?1*?2/(?2??1) and ?3DFG=?1DFG*?2DFG/(?2DFG??1DFG). A beam splitter combines the high power pulsed laser beam at wavelength ?3 with the high power pulsed laser beam at wavelength ?3DFG to form a single laser light.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: June 17, 2008
    Assignee: The Boeing Company
    Inventors: Frederick R. Vachss, Mark D. Ewbank
  • Patent number: 7365368
    Abstract: To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-emitting type elements 1 formed above the substrate 10. Each of the surface-emitting type elements 1 includes a light emitting element section 20, first and second electrodes 30, 32 for driving the light emitting element section 20, and a rectification element section 40. The rectification element section 40 is connected in parallel between the first and second electrodes 30, 32, and has a rectification action in a reverse direction with respect to the light emitting element section 20. The plurality of surface-emitting type elements 1 are connected in series in a direction in which forward directions of the respective light emitting element sections 20 coincide with one another.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: April 29, 2008
    Assignee: Seiko Epson Corporation
    Inventors: Tetsuo Nishida, Hajime Onishi
  • Patent number: 7362789
    Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: April 22, 2008
    Assignee: FUJIFILM Corporation
    Inventors: Hisashi Ohtsuka, Yoji Okazaki, Takayuki Katoh
  • Patent number: 7356065
    Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: April 8, 2008
    Assignee: FUJIFILM Corporation
    Inventors: Hisashi Ohtsuka, Yoji Okazaki, Takayuki Katoh
  • Patent number: 7352789
    Abstract: Laser light is emitted from a laser oscillator, and the laser light is made to enter a beam expander optical system including a concave lens through a correction lens. The laser oscillator, the correction lens and the concave lens are disposed so that, when an emission point of the laser oscillator is a first conjugate point, a point at which an image at the first conjugate point is formed through the correction lens is a second conjugate point, a distance between the correction lens and the second conjugate point is b, a focal length of the concave lens is f, and a distance between the correction lens and the concave lens is X, the X satisfies b?3|f|?X?b+|f|.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: April 1, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Koichiro Tanaka
  • Patent number: 7346092
    Abstract: According to the invention, a diode side pumped laser is provided. The laser has an optical cavity formed between a first and a second reflective surface. A Nd:YLF lasing medium is located within the cavity along its optical axis. The Nd:YLF lasing medium can desirably be a single Nd:YLF lasing rod which has a length of 90 mm or more. A plurality of diode bars are provided in optical communication with the Nd:YLF lasing medium preferably a lasing rod. The diode bars extend along substantially the pumpable length of the lasing rod and radially around the periphery of the lasing rod. The diode bars have radiation outlets in optical communication with the lasing rod for supplying electromagnetic radiation on pumping paths to the rod. The lasing rod receives an average linear power density from the diode bars of less than 50 watts/cm. The pumping paths traverse substantially the entire pumpable length of the lasing rod substantially perpendicular to the direction of propagation of energy in the laser cavity.
    Type: Grant
    Filed: December 16, 2005
    Date of Patent: March 18, 2008
    Assignee: Photonics Industries Int'l.
    Inventor: Yusong Yin
  • Patent number: 7339960
    Abstract: After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: March 4, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, Makoto Kato
  • Publication number: 20070263693
    Abstract: A compact and efficient ultraviolet laser source based on a optically-pumped solid-state or fiber laser that produces near-infrared output light suitable for nonlinear frequency conversion. The infrared laser output is frequency tripled or quadrupled to produce light in the ultraviolet wavelength range (200 nm to 400 nm). The novel technology is the use of highly efficient periodically poled nonlinear crystals, such as stoichiometric and MgO-doped lithium tantalate and lithium niobate. As opposed to conventional frequency-converted UV laser sources, which have high power consumption, high cost, and low efficiency, the laser sources of this invention utilize high efficiency nonlinear conversion provided by periodically poled materials and allow lower-cost architectures without additional focusing lenses, high power pump diodes, etc.
    Type: Application
    Filed: April 23, 2007
    Publication date: November 15, 2007
    Inventors: Stepan Essaian, Andrei Shchegrov
  • Patent number: 7289735
    Abstract: A laser apparatus is disclosed combining polarized light beams from two optical emitters into a combined beam of light with controllable degree of polarization (DoP). The laser apparatus includes a polarization combiner for combining the polarized beams into the combined beam, an optical tap for separating out a portion of the combined beam, and a photodetector electrically coupled to a laser controller for providing a feedback signal. The controller distinctively modulates the polarized radiation of each of the emitters, detects modulation signals in the photodetector output and adjusts an output power ratio of the optical emitters for maintaining the DoP of the combined beam at a pre-determined level. The invention can be used for minimizing the DoP of pump radiation in Raman and EDFA pump laser modules combining multiple pump laser diodes.
    Type: Grant
    Filed: April 4, 2005
    Date of Patent: October 30, 2007
    Assignee: JDS Uniphase Corporation
    Inventors: Maxim Bolshtyansky, Nicholas King
  • Patent number: 7285799
    Abstract: A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a <0001> axis roughly parallel to the plane of the layer, referred to as an in-plane light emitting layer. The in-plane light emitting layer may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, the in-plane light emitting layer has a thickness greater than 50 ?.
    Type: Grant
    Filed: April 21, 2004
    Date of Patent: October 23, 2007
    Assignee: Philip Lumileds Lighting Company, LLC
    Inventors: James C. Kim, Yu-Chen Shen
  • Patent number: 7277229
    Abstract: An optical system includes semiconductor lasers arranged in the direction of the slow axis of the laser beam, an optical means which makes parallel the collimated laser beams, an optical member which is provided with inlet and outlet faces which are positioned in perpendicular to the optical axis of laser beams and total reflection surfaces which are opposed to each other at a space where the component in the direction of the slow axis of the laser beam entering from the light inlet face repeats internal reflection, and emits from the light outlet face a slow axis uniform laser beam, and an imaging optical means which images the slow axis uniform laser beam on a surface as a linear line beam extending in the direction of the slow axis.
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: October 2, 2007
    Assignee: Fujifilm Corporation
    Inventor: Kiichi Kato
  • Patent number: 7274723
    Abstract: Conventionally, a laser beam is amplified by making a single pass through an amplifier but the laser beam emitted from the oscillator generally has low energy, so the energy stored in the amplifier cannot be fully extracted and only low laser output power and overall efficiency result. According to the method of the invention for amplifying a solid-state laser, the laser beam is passed through the amplifier multiple times and with spatial uniformity so as to achieve efficient extraction of the energy stored in the amplifier and the thermally induced distortion of the laser beam can be compensated by the single amplifier.
    Type: Grant
    Filed: August 27, 2004
    Date of Patent: September 25, 2007
    Assignee: Japan Atomic Energy Research Institute
    Inventors: Hiromitsu Kiriyama, Koichi Yamakawa
  • Patent number: 7268005
    Abstract: An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a plurality of photonic devices and spacer bars together into a stack. Optionally, spaced apart photonic device supports can be placed on the base between the rail portions to lift the photonic devices off of the surface of the base. The apparatus can also include a clamping system to hold the stack in place so that a vapor deposition process can be used to apply coatings to the photonic devices. In one exemplary embodiment, the photonic devices can be laser bars.
    Type: Grant
    Filed: October 27, 2003
    Date of Patent: September 11, 2007
    Assignee: Finisar Corporation
    Inventors: John Chen, Chun Lei, Robert Shih
  • Patent number: 7260133
    Abstract: A diode-pumped laser with a direct edge coupling of a pump beam is provided. The laser includes a microchip laser cavity optically pumped by a laser diode emitting an astigmatic pump beam having a substantially elliptical beam cross-section at an output laser diode facet. The microchip laser cavity is disposed at a substantial distance exceeding 0.001? from the laser diode pump where the astigmatic pump beam has a greatly reduced ellipticity, providing high laser output efficiency without coupling lens element between the laser cavity and the laser diode pump. The pumping arrangement is favourable for single-mode lasing. In some embodiments, the laser cavity includes nonlinear crystal for intra-cavity SHG, a saturable absorber for passive Q-switching and mode locking, and a polarizing prism.
    Type: Grant
    Filed: December 15, 2004
    Date of Patent: August 21, 2007
    Assignee: JDS Uniphase Corporation
    Inventors: Gang Lei, Charles Andy Hulse, Vincent Issier, Richard A. Bradley, Jr., Robert G. Waarts
  • Patent number: 7244923
    Abstract: Provided are a surface emitting laser device having an optical sensor, and an optical waveguide device employing the same. The surface emitting laser device having an optical sensor includes a surface emitting laser formed on a substrate and generating a laser beam to output it to outside, and an optical sensor formed adjacent to the surface emitting laser on the substrate and receiving external light. In the surface emitting laser device having the optical sensor, and the optical waveguide device employing the same, the surface emitting laser and the optical sensor are simultaneously integrated, however, the performance of the surface emitting laser is unaffected by the optical sensor and the optical sensor operates separately, exhibits high performance, and can respond within a wide wavelength band.
    Type: Grant
    Filed: September 21, 2005
    Date of Patent: July 17, 2007
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun Woo Song, Jong Hee Kim, Yong Sung Eom
  • Patent number: 7242025
    Abstract: A radiation-emitting semiconductor component has a semiconductor body containing a nitride compound semiconductor, and a contact metallization layer disposed on a surface of the semiconductor body. In this case, the contact metallization layer is covered with a radiation-transmissive, electrically conductive contact layer. The radiation generated is coupled out through the contact metallization layer or through openings in the contact metallization layer.
    Type: Grant
    Filed: January 31, 2003
    Date of Patent: July 10, 2007
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Dominik Eisert, Stephan Kaiser, Michael Fehrer, Berthold Hahn, Volker Härle
  • Patent number: 7242702
    Abstract: Lasing at the edge of the reflection band or at a defect state within the reflection band of a thin one-dimensional feedback structure is used to create a large-area, thin-film laser source with transverse dimensions that can be much greater than the film thickness. Angular confinement of radiation propagating perpendicular to the layers leads to a spreading of the beam inside the medium which is much greater than the diffraction divergence. This enhances the spatial extent of correlation at the output surface of the thin film. When a pump source induces gain at the lasing threshold in a wide region, a spatially coherent monochromatic light beam is emitted perpendicular to the film surface from the entire gain region. Alternate embodiments of the present invention include a passive spatial filter and an active amplifier.
    Type: Grant
    Filed: January 2, 2004
    Date of Patent: July 10, 2007
    Assignee: Chiral Photonics, Inc.
    Inventors: Victor Il'ich Kopp, Zhao-Qing Zhang, Azriel Zelig Genack
  • Patent number: 7221694
    Abstract: A solid-state laser rod pumping module has a stack-type semiconductor laser including a plurality of bar-shaped components that are stacked in a direction parallel to the axis of a solid-state laser rod. Each bar-shaped component includes a plurality of laser-light-emitting portions that are aligned and integrated in a direction orthogonal to the axis of the solid-state laser rod. The large divergence angle of the stack-type semiconductor can be compensated by including a light focusing component for focusing laser light emitted out of the stack-type semiconductor laser. The focused light is guided by a laser light guiding component disposed in a diffusive reflection tube. A light guiding component guides the focused light onto a solid-state laser rod located within the diffusive reflective tube, while maintaining the length of one side of the cross section of the guided light.
    Type: Grant
    Filed: January 7, 2004
    Date of Patent: May 22, 2007
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshihito Hirano, Shuhei Yamamoto, Yasuharu Koyata, Nicolaie Pavel
  • Patent number: 7215690
    Abstract: A solder-free laser module which comprises at least one laser chip clamp-mounting between electrodes. The laser module includes: some electrodes facing each other and having opposite poles; insulating separators placed between the facing surfaces of the electrodes to prevent direct contact between them and their short-circuiting; laser chips mounted between the facing surfaces of said electrodes, making contact with the electrodes, and clamping means for bringing the electrodes facing each other more closely together to ensure their contact with the laser chips positioned between them, thereby ensuring electrical power supply to the aforesaid laser chips and dissipation of the heat generated. The invention further relates to a method for assembling the aforesaid laser module.
    Type: Grant
    Filed: August 4, 2004
    Date of Patent: May 8, 2007
    Assignee: Monocrom, S.L.
    Inventor: Miguel Galan Valiente
  • Patent number: 7214997
    Abstract: An integrated optical device allowing for higher flexibility in designing its outer shape and securing hermetic sealing is provided, which includes a ceramic substrate mounting a light source, a covering member fixed to the substrate for covering the light source, and a resin mold package for attaching the substrate, wherein a metal joint portion on the substrate and a metal joint portion on the covering member are joined, as well as a through-hole in the substrate or in covering member is sealed with a transparent material for hermetic sealing of the light source.
    Type: Grant
    Filed: April 6, 2004
    Date of Patent: May 8, 2007
    Assignee: Sony Corporation
    Inventor: Kiyoshi Yamauchi
  • Patent number: 7209506
    Abstract: An optically pumped radiation-emitting semiconductor device with a surface-emitting quantum well structure (10), which has at least one quantum layer (11), and an active layer (8) for generating pump radiation (9) for optically pumping the quantum well structure (10), which is arranged parallel to the quantum layer (11). The semiconductor device has at least one emission region (12), in which the quantum well structure (10) is optically pumped, and at least one pump region (13). The quantum well structure (10) and the active pump layer (8) extend over the pump region (13) and over the emission region (12) of the semiconductor device, and the pump radiation (9) is coupled into the emission region (12) in the lateral direction.
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: April 24, 2007
    Assignee: Osram Opto Semiconductors GmbH
    Inventor: Tony Albrecht
  • Patent number: 7200161
    Abstract: A solid state laser module for amplification of laser radiation. The module includes a laser gain medium having a pair of generally parallel surfaces that form a disc-like shape, that receive and transmit laser radiation. At least one perimetral optical medium is disposed adjacent a peripheral edge of the laser gain medium and in optical communication therewith. A source of optical pump radiation directs optical pump radiation into the perimetral optical medium generally normal to the parallel surfaces and the perimetral optical medium transports the optical pump radiation into the laser gain medium to pump the laser gain medium to a laser transition level. Alternative embodiments include arrangements for directing cooling fluids between adjacently disposed laser gain media.
    Type: Grant
    Filed: June 7, 2004
    Date of Patent: April 3, 2007
    Assignee: The Boeing Company
    Inventor: Jan Vetrovec
  • Patent number: 7170102
    Abstract: A semiconductor laser device aimed to be reduced in size and that can maintain high position accuracy, and a fabrication method of such a semiconductor laser device are achieved. A semiconductor laser device includes a stem as a base member, and a cap member. The stem includes a main unit having a reference plane, and a heat sink platform as an element mount unit, located on the reference plane for mounting a laser element. The cap member is set on the reference plane of the stem so as to cover the heat sink platform. A hole is formed at the sidewall of the cap member facing the heat sink platform. Fixation between the cap member and the stem is established by fixedly attaching the portion at the inner side of the sidewall of the cap member adjacent the hole to the outer circumferential plane of a heat sink platform.
    Type: Grant
    Filed: May 14, 2004
    Date of Patent: January 30, 2007
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Makoto Tsuji
  • Patent number: 7167312
    Abstract: A beam shaping optical arrangement combines three incoming laser beams that are mutually laterally offset in two orthogonal directions (X and Y), including an incoming first central laser beam and second and third incoming beams laterally offset in the X direction on either side of the central beam, into one outgoing combined laser beam. The arrangement includes two lateral displacement optical units though which the laterally offset incoming beams are transmitted and that laterally displace the two laterally offset incoming beams along the X direction towards the incoming central beam but which do not laterally offset the incoming central beam.
    Type: Grant
    Filed: May 27, 2005
    Date of Patent: January 23, 2007
    Assignee: Trumpf Laser GmbH + Co. KG
    Inventors: Andreas Voss, Martin Huonker, Martin Liermann, Klaus Wallmeroth, Malte Kumkar, Friedheim Dorsch, Christian Schmitz
  • Patent number: 7154930
    Abstract: A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: December 26, 2006
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Hisashi Ohtsuka, Yoji Okazaki, Takayuki Katoh
  • Patent number: 7154929
    Abstract: A device for emission of light is made including an emitting structure including an active part and a micro-cavity, delimited by mirrors and containing the active part, and a laser diode designed for pumping the emitting structure. The emitting structure is fixed to the laser diode. The device is particularly applicable to the detection of gas.
    Type: Grant
    Filed: December 12, 2002
    Date of Patent: December 26, 2006
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Emmanuel Picard
  • Patent number: 7145931
    Abstract: Optically-pumped mid-infrared vibrational-rotational transition gas lasers and amplifiers with improved efficiency and practicality. Inventive laser and amplifier devices include: laser active media comprising a mixture of alkali vapor, selected hetero-nuclear molecular gas, and one or more buffer gases; conventional semiconductor laser diode pump sources with nanometer scale spectral bandwidths; and preferential laser emission in ro-vibrational transitions among relatively low-lying vibrational levels.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: December 5, 2006
    Inventor: William F. Krupke
  • Patent number: 7129512
    Abstract: The present invention provides a semiconductor laser device including a heat sink having one main surface, an n-AlGaAs cladding layer disposed on the main surface of the heat sink, an AlGaAs active layer disposed on the n-AlGaAs cladding layer and a p-AlGaAs cladding layer disposed on the AlGaAs active layer. An effective refractive index and a thermal resistance between a main surface on the heat sink side, of the AlGaAs active layer and a main surface on the heat sink side, of the n-AlGaAs cladding layer are respectively set smaller than those between a main surface on the side opposite to the heat sink, of the AlGaAs active layer and a main surface on the side opposite to the heat sink, of the p-AlGaAs cladding layer.
    Type: Grant
    Filed: October 12, 2004
    Date of Patent: October 31, 2006
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kimio Shigihara
  • Patent number: 7126974
    Abstract: Systems, configurations and methods of using laser diodes in ring-shaped arrays placed a distance away from thin disk solid-state laser gain media, which provide uniformly absorbed pump power distribution with high absorption efficiency. This results in major improvements in the scalability and ruggedness of such lasers and disk laser amplifiers. Use of the diode laser pump configurations of the invention results in compact, robust and scalable lasers that produce high quality, high power outputs.
    Type: Grant
    Filed: April 7, 2004
    Date of Patent: October 24, 2006
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: Jun Dong, Michael Bass
  • Patent number: 7120184
    Abstract: A system for generating a powerful laser beam includes a first laser element and at least one additional laser element having a rear laser mirror, an output mirror that is 100% reflective at normal incidence and <5% reflective at an input beam angle, and laser material between the rear laser mirror and the output mirror. The system includes an injector, a reference laser beam source, an amplifier and phase conjugater, and a combiner.
    Type: Grant
    Filed: March 18, 2004
    Date of Patent: October 10, 2006
    Assignee: The Regents of the University of California
    Inventor: John F. Holzrichter
  • Patent number: 7113528
    Abstract: A first semiconductor laser element and a second semiconductor laser element are arranged on an identical block, a first electrode of the first semiconductor laser element is in direct contact with the block, and heat radiating effect is high. A second electrode of the second semiconductor laser element is arranged on an insulating dielectric layer, and the block and second semiconductor laser element are electrically insulated. Therefore, irrespective of the material to compose the block, the first semiconductor laser element and the second semiconductor laser element can be independently driven. In addition, the light emitting point distance between the first semiconductor laser element and second semiconductor laser element is limited only by the distance between the electrodes of the respective semiconductor lasers and the positions of light emitting points on the semiconductor laser chip end face and can, therefore, be made as short as possible.
    Type: Grant
    Filed: July 17, 2003
    Date of Patent: September 26, 2006
    Assignee: NEC Electronics Corporation
    Inventors: Kazuyuki Miyabe, Hiroyuki Sawano, Hitoshi Hotta
  • Patent number: 7088761
    Abstract: A laser system is constructed so that a solid-state laser beam emitted from an Nd:YAG laser unit and a laser diode beam emitted from a combining LD which oscillates in a wavelength range shorter than that of the solid-state laser beam are combined by a dichroic beam splitter, the resultant beam is guided to an optical fiber, and a workpiece is irradiated with the combining LD beam and the solid-state laser beam with absolute irradiation positions and irradiation shapes of the beams almost matched each other. Thus, problems of high cost and high power consumption of the laser system due to low energy conversion efficiency, which become problems in a high-output high-luminance solid-state laser unit can be solved.
    Type: Grant
    Filed: February 18, 2002
    Date of Patent: August 8, 2006
    Assignee: Kataoka Corporation
    Inventor: Nobuaki Iehisa
  • Patent number: 7088756
    Abstract: A modelocked linear fiber laser cavity with enhanced pulse-width control includes concatenated sections of both polarization-maintaining and non-polarization-maintaining fibers. Apodized fiber Bragg gratings and integrated fiber polarizers are included in the cavity to assist in linearly polarizing the output of the cavity. Very short pulses with a large optical bandwidth are obtained by matching the dispersion value of the fiber Bragg grating to the inverse of the dispersion of the intra-cavity fiber.
    Type: Grant
    Filed: July 25, 2003
    Date of Patent: August 8, 2006
    Assignee: Imra America, Inc.
    Inventors: Martin E. Fermann, Gyu C. Cho
  • Patent number: 7088747
    Abstract: When a piezoelectric element 3 applies an external force to a plastic photonic crystal, the photonic crystal deforms, and accordingly, the photonic band gap easily changes. When the photonic band gap changes, transmission of light with a specific wavelength is limited. Therefore, light with a desired wavelength is outputted from the photonic crystal 2 upon sufficient tuning, and extracted to the outside through an output window 6. In the present invention, a plastic photonic crystal 2 which can achieve sufficient wavelength tuning although it is small is used, and elements are unitized, so that the entire wavelength tunable light source unit is downsized.
    Type: Grant
    Filed: September 26, 2001
    Date of Patent: August 8, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Yoshihiro Takiguchi, Kensaku Itoh, Junpei Yamanaka
  • Patent number: 7082149
    Abstract: A high pulse energy, side pumped laser is provided. The laser has an optical cavity formed between a first and a second reflective surface. A lasing medium is located within the cavity along its optical axis. A plurality of diode bars are provided in optical communication with the lasing medium preferably a lasing rod. The diode bars supply electromagnetic radiation to the lasing rod. The diode bars are configured about the lasing rod so that electromagnetic radiation from the diodes bars propagates through the lasing rod on a plurality of substantially nonintersecting paths. Since the lasing rod is side pumped, the substantially nonintersecting paths traverse the lasing rod substantially perpendicular to the direction of propagation of energy in the laser cavity.
    Type: Grant
    Filed: June 24, 2003
    Date of Patent: July 25, 2006
    Assignee: Photonics Industries Int'l
    Inventors: Yusong Yin, Shane Shizhou Zhang
  • Patent number: 7082150
    Abstract: A semiconductor laser device, comprising a semiconductor laser array for excitation having a plurality of semiconductor laser elements, and an optical resonator having a solid-state laser medium with a reflection mirror formed on one end surface and an output mirror provided in parallel to the reflection mirror, wherein laser beams emitted from the plurality of the semiconductor laser elements enter the optical resonator independently from each other, and the laser beams are respectively amplified and are projected by the optical resonator.
    Type: Grant
    Filed: September 12, 2003
    Date of Patent: July 25, 2006
    Assignee: Kabushiki Kaisha TOPCON
    Inventor: Masayuki Momiuchi
  • Patent number: 7065106
    Abstract: A transmitter optical subassembly includes an optical emitter and a fiber receptacle within which an optical fiber is received. An optical limiting element is positioned between the optical emitter and the fiber receptacle. When an optical signal is emitted from the optical emitter, the optical signal passes through the optical limiting element before the optical signal reaches the fiber receptacle and is received by the optical fiber. The optical limiting element has a property such that if the power of the optical signal entering the optical limiting element exceeds a predetermined limit, the power of the optical signal is optically attenuated so that the power of the optical signal exiting the optical limiting element remains below a predetermined limit.
    Type: Grant
    Filed: March 2, 2005
    Date of Patent: June 20, 2006
    Assignee: Finisar Corporation
    Inventor: Lewis B. Aronson
  • Patent number: 7050471
    Abstract: A semiconductor laser with a semiconductor body (1), which has a periodic arrangement of cutouts (2) or in which a period arrangement of semiconductor regions is formed, so that the radiation generated by the semiconductor laser is not capable of propagating within this periodic arrangement, the resonator (3) of the semiconductor laser being omitted from the periodic arrangement in the lateral direction. Furthermore, an optically pumped semiconductor device is disclosed with a vertical emitter (13) comprising a quantum well structure (7), which is pumped by means of a semiconductor laser of this type or into which the pump radiation of a pump radiation source is coupled by means of a corresponding waveguide (22).
    Type: Grant
    Filed: March 1, 2004
    Date of Patent: May 23, 2006
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Peter Brick, Tony Albrecht, Norbert Linder, Wolfgang Schmid
  • Patent number: 7046712
    Abstract: Co-doping the gain medium of a diode-pumped infrared laser to make the laser resistant to long-term degradation from high-intensity internal infrared radiation is disclosed. Co-doping the gain medium with ions such as Cr3+ and Ce3+ that make the gain medium resistant to external ionizing radiation solves problems of long-term degradation of the gain medium.
    Type: Grant
    Filed: May 2, 2003
    Date of Patent: May 16, 2006
    Assignee: JDS Uniphase Corporation
    Inventors: Mark A. Arbore, John F. Black, William M. Grossman
  • Patent number: 7046711
    Abstract: A diode pumped solid state laser for producing a high aspect ratio beam comprises a diode pumping array (1) on a diode array mount (3) and optical means for imaging a pump light beam onto a substantially asymmetrical spot with a smooth intensity profile. The pump light beam is pumping a laser medium (4). Both the pump and the lasing mode have strong asymmetries. In combination with the right choice of laser medium (4), this results in high power laser performance. The axis of the pump light beam is adjustable by a simple adjusting means (110) to a defined plane or direction relative to a mounting frame (111) of a diode array pumping device (103). The adjusting means (110) compensates small tolerances on mounting of the diode array (1) and/or at least one optical element (2). The adjusting means include at least one wedged window (127). Because of this adjustment the axis of the light beam lies in a defined plane relative to the mounting frame (111) of the pumping device (103).
    Type: Grant
    Filed: December 10, 2001
    Date of Patent: May 16, 2006
    Assignee: High Q Laser Production GmbH
    Inventors: Daniel Kopf, Michael Schmidt
  • Patent number: 7039075
    Abstract: A semiconductor laser, such as a vertical cavity, surface emitting laser (VCSEL) is coupled to an optical fiber. The other end of the optical fiber has a reflector, so as to provide a fiber-extended cavity for the VCSEL. Such a construction is useful for providing modal stability to the VCSEL or for forming a mode-locked VCSEL. The optical fiber may be a graded index fiber. In such a case, the fiber length may be selected to have an integral number of quarter pitch lengths. The fiber may be doped with an excitable species and lies within a fiber laser cavity. A semiconductor laser may pump the fiber laser, yielding an emission wavelength beyond the scope of the conventional semiconductor laser.
    Type: Grant
    Filed: April 11, 2003
    Date of Patent: May 2, 2006
    Inventor: Robert L. Thornton
  • Patent number: H2161
    Abstract: Visible light-emitting-diodes (LEDs) are inexpensive, provide emissions in many wavelengths and are powerful enough to pump solid state laser rods. The LED light is directed to the laser rod (laser gain element). The LED wavelength chosen matches the absorption spectrum of a transition element contained in the laser rod. It is know that the absorption bandwidths of these elements are typically very large. Besides a single LED, an array of LEDs may be used. Either of these arrangements may be imaged on the laser rod or fiber-coupled to the rod. A laser system that is pumped by one or more LEDs provides a low cost, relatively low power laser system. A low cost, higher powered, pulsed laser system is possible by pulsed LED operation. Thus it is possible to exceed the pump power threshold for a given laser by using a relatively small number of LEDs.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: July 4, 2006
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Richard Scheps