Abstract: An optical system has a high power diode pump source and a thin disk gain media. An optical coupler is positioned between the diode pump source and the thin disk gain media. The optical coupler produces a beam with a large numerical aperture incident on the thin disk gain media.

Abstract: A semiconductor laser diode array including a plurality of laser diode bars, each carried by a submount and forming a subassembly. Each subassembly is separated by a flexible or compliant electrically conductive spacer. All connections within the array are by way of a non-fluxed solder, that may be hard and/or soft, reflowed in a non-oxidizing atmosphere in a simple mechanical stack fixture to create nearly void-free solder joints with relatively high thermal integrity and electrical conductivity. Flexible electrically conductive spacers are disposed between the subassemblies to eliminate tensile stress on the laser diode bars while providing electrical conductivity between subassemblies. The subassemblies are carried by a thermally conductive dielectric substrate, allowing waste heat generated from the bars to be conducted to a cooling device. The invention eliminates known failure modes in interconnections, minimizing tensile strength on the diode arrays, and increasing the useful life of the array.

Abstract: A first injection laser signal and a first part of a reference laser beam are injected into a first laser element. At least one additional injection laser signal and at least one additional part of a reference laser beam are injected into at least one additional laser element. The first part of a reference laser beam and the at least one additional part of a reference laser beam are amplified and phase conjugated producing a first amplified output laser beam emanating from the first laser element and an additional amplified output laser beam emanating from the at least one additional laser element. The first amplified output laser beam and the additional amplified output laser beam are combined into a powerful laser beam.

Abstract: In the basic Diode-Pumped Alkali Laser (DPAL) device, excitation to the n 2P3/2 electronic level by a single diode laser pump source leads to a population inversion between the first excited electronic 2P1/2 level and the ground 2S1/2 level, permitting the construction of efficient, high-power, compact DPAL laser oscillators in the near infrared spectral region. The present invention extends the single-step excitation DPAL to a two-step excitation, or up-conversion DPAL to produce efficient, powerful laser operation in the visible blue and near UV spectral regions (viz., in the range 460-323 nm). The present invention describes an apparatus and method that efficiently sums the energy of two, near-infrared diode pump photons in alkali vapor atoms, followed by stimulated emission to their electronic ground levels.

Abstract: A semiconductor laser apparatus comprises a pumping beam source and a surface emission type of semiconductor device. The pumping beam source is constituted of a semiconductor laser device, in which a composition selected from the group consisting of InGaN and GaN is employed in an active layer. The surface emission type of semiconductor device comprises a substrate, and an active layer, which is constituted of a composition selected from the group consisting of InGaAlP and InGaP and is provided on the substrate. The surface emission type of semiconductor device is pumped by the pumping beam source to produce a laser beam. The semiconductor laser apparatus produces the laser beam having a wavelength of a red region or an ultraviolet region and undergoes oscillation in a fundamental mode with a high reliability and a high efficiency and up to a high output power.

Abstract: The invention is directed to an apparatus and method for oscillator start-up control, and more particularly to an apparatus and method for overdriving a laser to obtain mode-lock operation. The oscillator with start-up control has a lasing medium mounted on a base. A laser pumping source is mounted on the base for inducing a laser beam from the lasing medium. A mode-lock detection device is mounted about the base. An overdrive circuit is coupled with the mode-lock detection and signal processing device for determining mode-lock status of the oscillator. The overdrive circuit overdrives the pump source when the oscillator is not in mode-lock status.

Abstract: A solid-state laser system includes a solid state oscillator for generating a laser beam and a multiple stage amplifier for increasing an energy of the beam. The oscillator includes an elongated housing having an elongated cavity defined therein, a solid state rod disposed within the cavity, a pumping source for exciting laser active species within the rod, and a resonator including the rod disposed therein for generating a laser beam. The multiple-stage amplifier preferably includes an even number of stages. One or more pairs of compensating stages may be mutually rotated about the beam axis by substantially 90°, with each pumping direction parallel to the polarization direction of the beam. A first stage may be side-pumped by a pumping radiation source in a direction substantially parallel to a polarization direction of the beam generated by the oscillator resonator.

Abstract: This device comprises at least three pulsed lasers (2, 4, 6), in order to supply light pulses, and means (14) for directing these pulses substantially onto the same spot of a target (16) and substantially at the same time onto this spot. The lasers are pumped by diodes (40) operating continuously.

Abstract: This invention provides a vertical-cavity surface-emitting laser device comprising a surface light-emitting part comprising a cavity consisting of two multilayer reflectors and an active region between them and a waveguide part for introducing induced light into the surface light-emitting part. The device is substantially independent of a temperature and allows a wavelength to be controlled after manufacturing the device.

Abstract: A cavity has a longitudinal hollow having opposite open ends. An excitation source, such as a YAG rod, is accommodated in the hollow of the cavity. A hollow, cylindrical rod holder is inserted into each of the opposite open ends of the hollow and is fitted over a corresponding end of the YAG rod. A seal is fitted into a hollow of the rod holder adjacent to a portion of the rod holder fitted over the end of the YAG rod. The seal includes an annular seal body with a U-shaped section, e.g. made from Teflon®, and fitted over an outer periphery of the YAG rod to grip the YAG rod, as well as a spring fitted in a groove of the seal body provided by the U-shaped section so as to circumferentially surround a gripped portion of the YAG rod.

Abstract: An optical semiconductor module having a large endothermic amount of an electronic cooling element can be provided, even if the area of the bottom plate of a package is the same. A package 11 includes two or more units of electronic cooling element 16 mounted therein. Each unit of the electronic cooling element is inserted through the space between inner juts 14a of ceramic feedthrough of the package 11 and a bottom plate 13, and is fixed to the bottom plate. The plural units of electronic cooling element are connected in series by one or more copper piece. The total area of junction between the two or more units of electronic cooling element and the bottom plate area of the package 11 occupies 75% or more of the area of the bottom plate. Thus, the ratio of the area of junction between the bottom plate and the electronic cooling element as a whole to the area of the bottom plate of the package can be increased.

Abstract: A device is proposed to symmetrize the radiation from one or from several linear optical emitters. The device possesses per emitter 1, 1a, 1b a cylindrical lens optical unit 2, 2a, 2b with one or more cylindrical lenses, which collimate each light beam in the y-direction, where by rotating at least one of the cylindrical lenses around the z-axis or by providing a discontinuous diffracting element, each light beam is diffracted at a different diffraction angle in the y-direction. The device additionally contains a director-collimator optical unit 3, which collimates each light beam in the x-direction and diffracts at different diffraction angles so that the main beams of the individual light beams in the x-direction converge at a specified distance from the emitter and run parallel in the y-direction. Finally, the device has a redirecting optical unit 4 which compensates for the diffraction of the light beam in the x-direction caused by the director-collimator optical unit 3.

Abstract: A semiconductor laser capable of emitting a plurality of laser light having different oscillation wavelengths which is formed with dielectric films having little fluctuation in reflectance at ends of a plurality of active layers and a method of production of the same, said semiconductor laser having a plurality of active layers having different compositions on a substrate and emitting in parallel a plurality of laser light having different oscillation wavelengths, wherein a front dielectric film having a predetermined thickness by which a reflectance with respect to light of a predetermined wavelength of an arithmetical mean of oscillation wavelengths becomes the extremal value is formed on an end of the laser emission side, while rear dielectric films having higher reflectances compared with the front dielectric film and having predetermined thicknesses by which reflectances with respect to light having a predetermined wavelength become the extremal values are formed on the end of the rear side, and a method

Abstract: Methods and devices are provided for converting a fundamental wavelength of a fundamental beam generated by a surface-emitting diode laser having a first resonating cavity. According to some embodiments, a first nonlinear crystal disposed in a second resonating cavity external to first resonating cavity converts the fundamental beam to a first output beam having a first output wavelength different from the fundamental wavelength. Some embodiments include a second nonlinear crystal, which may be disposed in the second resonating cavity or in a third resonating cavity, for producing a second output beam having a second output wavelength different from the first output wavelength. In some such embodiments, the second nonlinear crystal converts the wavelength of the first output beam to produce the second output beam. In some embodiments, the second nonlinear crystal interacts with the first output beam and an infrared beam from another laser device to produce the second output beam.

Abstract: A semiconductor laser device constituted by a stack of semiconductor layers formed on a substrate. The semiconductor layers include a first cladding layer of a first conductive type, an electric-to-optical conversion layer, and a second cladding layer of a second conductive type, formed in this order. In the semiconductor laser device, resonator surfaces are formed at opposite ends of the stack, and the end facet of the electric-to-optical conversion layer at each of at least one of the opposite ends of the stack protrudes outward from the shortest current path between the end facets of the first cladding layer and the second cladding layer at the end of the stack through semiconductor layers located between the first cladding layer and the second cladding layer.

Abstract: The present invention has applications in high-bandwidth communications systems and other applications that utilize modulated optical energy. In one aspect of the invention, a short cavity diode-pumped laser generates optical energy that may be modulated over a wide range of frequencies. In one embodiment, the short cavity diode-pumped laser may be modulated at rates up to 15 GHz. The short cavity diode-pumped laser may include a laser diode modulator and a laser coupled to the laser diode modulator having a cavity lifetime of less than about 100 picoseconds.

Abstract: A system for coupling light emitted from a plurality of laser diodes to a single optical fiber provides increased pump light brightness to the optical fiber to provide increased power fiber amplifiers. The system takes advantage of the brightness mismatch in the fast and slow planes of a laser diode to allow capture of more than one diode's power into a single multimode pump fiber. A first cylindrical lens is disposed to collimate light from the fast planes of the diodes. A second cylindrical lens is disposed orthogonal to the optical axis and perpendicular to the first cylindrical lens and images light from the diodes in the slow plane. A collection lens is provided to image the light from the slow plane as well as collect light from the fast plane and directs light from multiple diodes into a single multimode optical fiber.

Abstract: A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS2, MoSe2, WS2, and WSe2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.

Abstract: A pumping module for use in a solid state laser comprises an annular array of laser diode segments (10) forming a passage (24), each segment (10) comprising an extended body supporting a laser diode array (17) that extends along the longitudinal axis of the segment (10) for directing light into the passage (24) from an inner face (12) of the annular array, wherein adjacent side faces of any two segments (10) in the annular array are in sealing engagement. The inner faces (12) of the array of segments (10) form a continuous surface so that coolant can flow between a laser rod and the segments (10) to reduce localized heating.

Abstract: A cylindrical two-dimensional diode-laser assembly includes fractionally-cylindrical dielectric segments bonded in a circular aperture in a metal heat-sink. Diode laser bars are located in gaps between the segments with light from the diode-lasers directed inwardly. The segments are made by cutting slots in one end of a tube of the dielectric material with the width of the slots corresponding to the width of the gaps and the part of the tube between slots providing the segments. The slotted tube is metallized and the slotted end of the tube is inserted into the heat-sink aperture with an unslotted part of the tube outside the aperture. The slotted part of the tube is bonded in the aperture and the unslotted part of the tube separated from the slotted part leaving the segments bonded in the aperture.

Abstract: A process of making a laser diode device includes these steps: applying a bonding layer such as molybdenum manganese to surfaces of first and second bodies of dielectric material such as beryllium oxide; joining the first and second bodies together to form a cavity; and bonding a sectored conductor ring to the bonding layer within the cavity. The laser diode device made by the process includes a body of dielectric material such as beryllium oxide forming a cavity; a bonding layer lining the cavity; a conductor bonded to the layer within the cavity; the conductor being divided into ring sectors separated by radial diode bar spaces; and a laser diode bar in each of the bar spaces forming an array of such laser diode bars. The ring sectors and laser diode bars together form a series path for electric current around the conductor to energize the laser diode bars.

Abstract: A short-wavelength vertical cavity surface emitting laser (VCSEL) is flip-chip bonded to a long-wavelength VCSEL. The short-wavelength VCSEL is used to optically-pump the long-wavelength VCSEL. Certain embodiments of the invention can serve as optical sources for optical fiber communication systems. Methods also are provided.

Abstract: A solid-state laser rod pumping module comprises a stack-type semiconductor laser including a plurality of bar-shaped (or rectangular) components that are stacked in a direction parallel to the axis of a solid-state laser rod, each of the plurality of bar-shaped components including a plurality of laser-light-emitting portions that are aligned and integrated in a direction orthogonal to the axis of the solid-state laser rod. The stack-type semiconductor laser has a large divergence angle in a longitudinal parallel to the axis of the solid-state laser rod.

Abstract: A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.

Abstract: An optically pumped laser has a gain medium positioned inside of an optical resonator cavity and disposed about a resonator optical axis. An optical pumping source is positioned outside of the optical resonator cavity. A reflective coupler with a coupler body, and an interior volume passing therethrough is positioned proximal to the optical pumping source. Light from the pumping source passes into an entrance aperture of the reflective coupler to an exit aperture of the reflective coupler positioned distal to the optical pumping source. The interior volume of the reflective coupler is bounded by a reflective surface, an entrance aperture and the exit aperture, and is substantially transparent to radiation from the optical pumping source. The reflective surface has a high reflectivity matched to radiation from the optical pumping source.

Abstract: A vertical cavity surface emitting laser device (10) has a discontinuity (11) formed within the body of the device. When the device is in use, the direction of polarization of light emitted from the device is substantially aligned with a boundary of the discontinuity.

Abstract: In one form of the invention, there is provided a laser comprising a front mirror and a rear mirror which are disposed so as to establish a reflective cavity therebetween; a gain region disposed between the front mirror and the rear mirror, the gain region being constructed so that when it is appropriately stimulated by light from a pump laser, the gain region will emit light; one of the front mirror and the rear mirror is substantially fully reflective at the lasing wavelength and the other of the front mirror and rear mirror being partially reflective at the lasing wavelength so as to allow a beam of laser light to be emitted therefrom; and an intermediate mirror disposed between the rear mirror and the front mirror, at least a portion of the gain region being disposed between the rear mirror and the intermediate mirror, the rear mirror and the intermediate mirror being reflective at the pump wavelength and being spaced from one another so as to cause the pump light to be reflected between the rear mirror a

Abstract: The present invention relates to a solid-state laser comprising: a) a semiconductor pump laser, b) a lens integrated on the surface of said semiconductor pump laser, c) a packaging material consisting essentially of a spin-on glass material, wherein the spin-on glass material is processable at a process temperature of less than 225° C., and d) a lasing material layer having a highly reflective coating in both sides. The invention also relates to a process for producing such a solid-state laser, which process comprises applying spin-on glass material onto semiconductor wafers having VCSEL pump lasers using different coating methods, such as spin coating, and curing the glass film layer at temperatures <225° C.

Abstract: A multimode source, such as a high-power laser diode bar, to pump an Nd3+ doped region defined in a cavity of a monolithic crystal structure. The axial length L1 of the doped region is chosen to optimize energy absorption from the multimode source while minimizing resonant re-absorption loss to unpumped Nd3+ ions. The next proximal cavity length L2 is an undoped region whose length is chosen to optimize the lowest order or fundamental spatial mode (“mode 9”) of the cavity. Advantageously, multi-parameter numerical optimization techniques may be employed in which the parameter set (e.g., doped length, L1, doping concentration, pump beam spot size, micro laser cavity length, and output coupler reflectivity) is varied to determine the overall optimal length L1opt.

Abstract: The invention offers a low-noise, compact, high-efficiency light generating device and an irradiation method thereof for use in medical applications. A fundamental harmonic laser head 106 is composed of a quasi-continuous wave oscillation mode laser diode (QCW-LD) 101, a laser crystal 103, a rear mirror 104 and an output mirror 105. The QCW-LD 101 is driven by an LD power source 102 capable of modulating the pulse waveform in time. A beam adjusting portion 108 comprises a wave plate, a polarizer, a lens and an isolator. A wavelength converting portion 112 is an optical parametric oscillator (OPO) comprising a non-linear optical crystal 109, an OPO input mirror and an OPO output mirror 111.

Abstract: A diode-pumped solid-state laser oscillator optically pumps a laser medium. The oscillator has at least one pumping light source that emits light in a predetermined wavelength band, and a laser medium that absorbs light in the wavelength band. In the wavelength band, the optical absorption index of the laser medium increases with an increase in wavelength, and the optical radiation energy of the light source decreases with an increase in wavelength. Thus, with respect to wavelength changes, an increase in the optical absorption index is cancelled out by a decrease in the radiation energy, making the stability of the laser output less dependent on the temperature of the optical pumping medium or laser medium.

Abstract: A laser crystal is formed on a substrate in a solid-state laser device. The laser crystal oscillates laser beam from a second end face when an excitation beam is projected to a first end face. An excitation beam emission element emitting the excitation beam is provided for the solid-state laser device. A waveguide path is formed on the substrate. The excitation beam is transmitted through the waveguide path. The waveguide path has a first end portion on which the excitation beam emitted by the excitation beam emission element impinges and a second end portion which opposes the first end face of the laser crystal. The excitation beam is emitted from the second end portion.

Abstract: A laser beam generation apparatus includes a solid state laser medium having first and second optically polished planes provided opposed with each other to allow a laser beam to be pumped to pass out of one of the first and second optically polished planes. At least one third optical polished plane which is different from the first and second optically polished planes is also provided. A pumping beam source emits a pumping light beam to pump the laser medium and impinges the pumping light source to be incident on the at least one third optically polished plane. Further, the pumping laser beam is provided at an incident angle substantially equal to the Brewster angle.

Abstract: Apparatus and method for achieving improved performance in a solid-state laser. The solid-state laser apparatus preferably uses a laser gain medium in the shape of a disk wherein optical pump radiation is injected into the peripheral edge of the disk. In the preferred embodiment the laser gain medium is provided with optical coatings for operation in the active mirror configuration. Furthermore, the laser gain medium is pressure-clamped to a rigid, cooled substrate, which allows it to maintain a prescribed shape even when experiencing significant thermal load. A cooling medium can be provided to a heat exchanger internal to the substrate and/or flowed through the passages on the substrate surface, thereby directly cooling the laser gain medium. Sources of optical pump radiation are placed around the perimeter of the gain medium. Tapered ducts may be disposed between the sources and the gain medium for the purpose of concentrating optical pump radiation.

Abstract: A semiconductor laser having an external cavity including a single-mode optical fiber. A Bragg grating is written onto the fiber which defines the end of the optical cavity, selects the lasing wavelength, and discriminates against the lasing of higher-order transverse modes in the multi-mode gain region. In one embodiment, the semiconductor laser includes an optically active vertical-cavity semiconductor stack similar to a vertical-cavity surface emitting laser. The stack is optically pumped either from the front or the back over a relatively large area such a multi-mode beam is output. Optics couple the multi-mode beam to the single-mode input of the fiber. A partially transmissive mirror of reflectivity between 25 and 40% may be placed on the output surface of the semiconductor stack to form a coupled-cavity laser. A plurality of laser diodes can be angularly positioned around the area of the semiconductor stack being pumped to increase the total pump power.

Abstract: A semiconductor laser and an optical waveguide device with an optical waveguide formed at a surface of its substrate are provided on a submount. The semiconductor laser and the optical waveguide device are mounted with an active layer and a surface at which the optical waveguide is formed facing the submount, respectively. The submount is combined with the semiconductor laser or the optical waveguide device to form one body using an adhesive with a spacer, which maintains a substantially uniform distance therebetween, being interposed therebetween, so that position adjustment in the height direction can be made automatically and mounting can be carried out with high-precision optical coupling. Thus, an optical waveguide device integrated module and a method of manufacturing the same are provided, in which a semiconductor laser and a planar optical waveguide device are mounted with their positions in the height direction controlled with high precision.

Abstract: A laser oscillator has a resonator including a high reflector, an output coupler and a gain medium is positioned in the resonator. A diode pump source is provided, the pump source and gain medium create a lensing effect in the resonator. A shutter is positioned in the resonator and is configured to prohibit oscillation in the resonator until the lensing effect is stabilized. In one embodiment, diode-pumped laser oscillators are provided where damage to intracavity elements, such as SESAM'S, is prevented.

Abstract: A semiconductor laser and an optical waveguide device with an optical waveguide formed at a surface of its substrate are provided on a submount. The semiconductor laser and the optical waveguide device are mounted with an active layer and a surface at which the optical waveguide is formed facing the submount, respectively. The submount is combined with the semiconductor laser or the optical waveguide device to form one body using an adhesive with a spacer, which maintains a substantially uniform distance therebetween, being interposed therebetween, so that position adjustment in the height direction can be made automatically and mounting can be carried out with high-precision optical coupling. Thus, an optical waveguide device integrated module and a method of manufacturing the same are provided, in which a semiconductor laser and a planar optical waveguide device are mounted with their positions in the height direction controlled with high precision.

Abstract: A laser device which may be used as an oscillator or amplifier comprising a chamber having a volume formed therein and a gain medium within the volume. The gain medium comprises solid-state elements containing active laser ion distributed within the volume. A cooling fluid flows about the solid-state elements and a semiconductor laser diode provides optical pump radiation into the volume of the laser chamber such that laser emission from the device passes through the gain medium and the fluid. The laser device provides the advantages of a solid-state gain medium laser (e.g., diode-pumping, high power density, etc), but enables operation at higher average power and beam quality than would be achievable from a pure solid-state medium.

Abstract: Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.

Abstract: A laser device and methods of lasing, the laser device comprising a chamber containing a volume formed therein and a gain medium within the volume. The gain medium comprises solid-state portions containing active laser ion suspended within a fluid which exhibits a refractive index which is substantially similar to that of the solid-state portions. In a variation, the gain medium is flowed through the volume, cooled externally of the volume and then flowed back through volume. In preferred form, the solid state portions are either naturally suspended within the fluid or are suspended by flow within the fluid. Thus, laser devices are provided in which the laser and the coolant are homogenized into a single gain medium exhibiting thermal properties of a liquid laser but with solid state gain material in order to produce high energy and high average power.

Abstract: A high efficiency, high performance optical amplifier includes an amplification stage comprised of two Erbium doped fiber (EDF) gain sections separated by a variable optical attenuator (VOA). A single pump serves to pump both EDF sections. A high dynamic gain range is achieved by an interplay between the action of the VOA, and the pump energy absorption mechanisms in each gain section, which are dominated by the saturation characteristics of each of the EDFs. In a preferred embodiment of the method, input signals are coupled with a pump signal into a first EDF gain section in which the energy absorption mechanisms provide first amplified signals that are correlated with a residual pump signal. At the first EDF gain section output, the combined amplified signals and residual pump signal are decoupled, the amplified signals being attenuated in the VOA while the residual pump signal being routed around the VOA.

Abstract: A side-pumped, diode-pumped solid state laser device includes an elongated housing having an elongated cavity defined therein and further having an elongated opening defined between the cavity and the exterior of the housing. A solid state rod is disposed within the cavity and is preferably surrounded by a cooling fluid. A cover seal sealably covering the opening and thereby encloses the cavity. The cover seal is formed of a material that is at least substantially transparent to pumping radiation at a predetermined pumping wavelength. A diode array emits the pumping radiation that traverses the cover seal and the opening to be absorbed by the rod to excite laser active species within the rod. The laser device further includes a resonator including the rod disposed therein for generating a laser beam.

Abstract: To provide a laser oscillation method and a laser device, which use a laser medium such as an Nd:GdVO4 crystal to which neodymium is doped in high concentration exceeding 1% in atomicity ratio, the laser medium comprised of the gadolinium-vanadate crystal to which neodymium as laser active ion is doped by a floating zone method such that concentration becomes exceeding 1% in atomicity ratio.

Abstract: The invention relates to a laser with a decoupling means for emitting a laser output depending on at least one influenceable parameter and a mode-coupling means for coupling a plurality of the laserable modes of the resonator. According to the invention, a detection means is provided for detecting a value related to the emitted laser output and a parameter varying means for varying the at least one parameter in response to the detected value.

Abstract: A solid-state laser includes a crystal wafer provided as an active medium, a cooling chamber for accommodating a cooling liquid, and an optically transparent support body. The crystal wafer has a flat side that faces the cooling chamber and a side that is remote from the cooling chamber. The flat side of the crystal wafer is in direct thermal contact with the cooling liquid. The cooling chamber has a wall element that is formed by the crystal wafer. The optically transparent support body is configured on the side of the crystal wafer that is remote from the cooling chamber. Since, the crystal wafer is in direct thermal contact with the cooling liquid, a minimal heat transfer resistance is ensured that even when the crystal wafer becomes deformed.

Abstract: An edge-pumped solid state thin slab laser apparatus is disclosed that is power scalable to well over 150 W for either multimode or near single transverse mode operation. A slab thickness is selected that is small enough to minimize thermal effects for a straight through beam yet large enough to allow efficient direct coupling of pump light from high power diode array stacks while also keeping the gain to within manageable levels for pulsed operation. Cooling of the slab is provided conductively, preferably by contact with metal blocks of high thermal conductivity. The edge-pumped solid state thin slab laser provides a near-one dimensional temperature gradient and heat flow direction that is perpendicular to the laser signal plane of propagation. The width of the slab is selected so as to maximize pump absorption length for a given laser material and both one and two-sided pumping schemes can be accommodated by the basic slab laser platform, depending on power, mode and beam quality requirements.

Abstract: The invention includes also a sensor that includes at least one laser, at least one detector, and at least on lens system that includes a sensor surface having three individual surfaces that are virtually the same, and an object surface having two individual surfaces that are virtually the same.

Abstract: A solid-state laser rod pumping module has a stack-type semiconductor laser including a plurality of bar-shaped components that are stacked in a direction parallel to the axis of a solid-state laser rod. Each bar-shaped component includes a plurality of laser-light-emitting portions that are aligned and integrated in a direction orthogonal to the axis of the solid-state laser rod. The large divergence angle of the stack-type semiconductor can be compensated by including a light focusing component for focusing laser light emitted out of the stack-type semiconductor laser. The focused light is guided by a laser light guiding component disposed in a diffusive reflection tube. A light guiding component guides the focused light onto a solid-state laser rod located within the diffusive reflective tube, while maintaining the length of one side of the cross section of the guided light.

Abstract: A laser apparatus includes a semiconductor laser element, a surface-emitting semiconductor element including a first mirror, and a second mirror. The semiconductor laser element emits first laser light having a first wavelength. The surface-emitting semiconductor element is excited with the first laser light, and emits second laser light having a second wavelength which is longer than the first wavelength. The first mirror in the surface-emitting semiconductor element is arranged on one side of the first active layer. The second mirror is arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator in which the second laser light resonates. The surface-emitting semiconductor element includes a structure for controlling a spatial mode of the second laser light.