Semiconductor Patents (Class 372/75)
  • Patent number: 6650668
    Abstract: A cylindrical two-dimensional diode-laser assembly includes fractionally-cylindrical dielectric segments bonded in a circular aperture in a metal heat-sink. Diode laser bars are located in gaps between the segments with light from the diode-lasers directed inwardly. The segments are made by cutting slots in one end of a tube of the dielectric material with the width of the slots corresponding to the width of the gaps and the part of the tube between slots providing the segments. The slotted tube is metallized and the slotted end of the tube is inserted into the heat-sink aperture with an unslotted part of the tube outside the aperture. The slotted part of the tube is bonded in the aperture and the unslotted part of the tube separated from the slotted part leaving the segments bonded in the aperture.
    Type: Grant
    Filed: October 2, 2001
    Date of Patent: November 18, 2003
    Assignee: Coherent, Inc.
    Inventors: Alexander A. Yatskar, Serrena Marie Carter, R. Russel Austin
  • Patent number: 6647037
    Abstract: A process of making a laser diode device includes these steps: applying a bonding layer such as molybdenum manganese to surfaces of first and second bodies of dielectric material such as beryllium oxide; joining the first and second bodies together to form a cavity; and bonding a sectored conductor ring to the bonding layer within the cavity. The laser diode device made by the process includes a body of dielectric material such as beryllium oxide forming a cavity; a bonding layer lining the cavity; a conductor bonded to the layer within the cavity; the conductor being divided into ring sectors separated by radial diode bar spaces; and a laser diode bar in each of the bar spaces forming an array of such laser diode bars. The ring sectors and laser diode bars together form a series path for electric current around the conductor to energize the laser diode bars.
    Type: Grant
    Filed: May 23, 2001
    Date of Patent: November 11, 2003
    Inventor: Timothy L. Irwin
  • Patent number: 6647050
    Abstract: A short-wavelength vertical cavity surface emitting laser (VCSEL) is flip-chip bonded to a long-wavelength VCSEL. The short-wavelength VCSEL is used to optically-pump the long-wavelength VCSEL. Certain embodiments of the invention can serve as optical sources for optical fiber communication systems. Methods also are provided.
    Type: Grant
    Filed: September 18, 2001
    Date of Patent: November 11, 2003
    Assignee: Agilent Technologies, Inc.
    Inventors: Albert T. Yuen, Michael R. T. Tan, Dubravko Ivan Babic, Scott William Corzine
  • Publication number: 20030206570
    Abstract: An optically pumped laser has a gain medium positioned inside of an optical resonator cavity and disposed about a resonator optical axis. An optical pumping source is positioned outside of the optical resonator cavity. A reflective coupler with a coupler body, and an interior volume passing therethrough is positioned proximal to the optical pumping source. Light from the pumping source passes into an entrance aperture of the reflective coupler to an exit aperture of the reflective coupler positioned distal to the optical pumping source. The interior volume of the reflective coupler is bounded by a reflective surface, an entrance aperture and the exit aperture, and is substantially transparent to radiation from the optical pumping source. The reflective surface has a high reflectivity matched to radiation from the optical pumping source.
    Type: Application
    Filed: April 14, 2003
    Publication date: November 6, 2003
    Inventors: Jason D. Henrie, William L. Nighan
  • Publication number: 20030206569
    Abstract: A solid-state laser rod pumping module comprises a stack-type semiconductor laser including a plurality of bar-shaped (or rectangular) components that are stacked in a direction parallel to the axis of a solid-state laser rod, each of the plurality of bar-shaped components including a plurality of laser-light-emitting portions that are aligned and integrated in a direction orthogonal to the axis of the solid-state laser rod. The stack-type semiconductor laser has a large divergence angle in a longitudinal parallel to the axis of the solid-state laser rod.
    Type: Application
    Filed: April 30, 2003
    Publication date: November 6, 2003
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshihito Hirano, Shuhei Yamamoto, Yasuharu Koyata, Nicolaie Pavel
  • Publication number: 20030206568
    Abstract: A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.
    Type: Application
    Filed: May 30, 2003
    Publication date: November 6, 2003
    Applicant: The Regents of the University of California
    Inventors: Brian J. Comaskey, Earl R. Ault, Thomas C. Kuklo
  • Patent number: 6639931
    Abstract: A vertical cavity surface emitting laser device (10) has a discontinuity (11) formed within the body of the device. When the device is in use, the direction of polarization of light emitted from the device is substantially aligned with a boundary of the discontinuity.
    Type: Grant
    Filed: March 29, 2000
    Date of Patent: October 28, 2003
    Assignee: University of Bristol
    Inventors: Philip Dowd, Ian Hugh White, Richard Vincent Penty, Peter John Heard, Geoffrey Charles Allen, Michael Renne Ty Tan
  • Patent number: 6639932
    Abstract: In one form of the invention, there is provided a laser comprising a front mirror and a rear mirror which are disposed so as to establish a reflective cavity therebetween; a gain region disposed between the front mirror and the rear mirror, the gain region being constructed so that when it is appropriately stimulated by light from a pump laser, the gain region will emit light; one of the front mirror and the rear mirror is substantially fully reflective at the lasing wavelength and the other of the front mirror and rear mirror being partially reflective at the lasing wavelength so as to allow a beam of laser light to be emitted therefrom; and an intermediate mirror disposed between the rear mirror and the front mirror, at least a portion of the gain region being disposed between the rear mirror and the intermediate mirror, the rear mirror and the intermediate mirror being reflective at the pump wavelength and being spaced from one another so as to cause the pump light to be reflected between the rear mirror a
    Type: Grant
    Filed: December 14, 2001
    Date of Patent: October 28, 2003
    Assignee: CoreTek, Inc.
    Inventors: Kevin J. Knopp, Daryoosh Vakhshoori, Peidong Wang
  • Publication number: 20030193982
    Abstract: The present invention relates to a solid-state laser comprising: a) a semiconductor pump laser, b) a lens integrated on the surface of said semiconductor pump laser, c) a packaging material consisting essentially of a spin-on glass material, wherein the spin-on glass material is processable at a process temperature of less than 225° C., and d) a lasing material layer having a highly reflective coating in both sides. The invention also relates to a process for producing such a solid-state laser, which process comprises applying spin-on glass material onto semiconductor wafers having VCSEL pump lasers using different coating methods, such as spin coating, and curing the glass film layer at temperatures <225° C.
    Type: Application
    Filed: May 14, 2003
    Publication date: October 16, 2003
    Inventors: Faramarz Farahi, Pedram Leilabady
  • Patent number: 6633599
    Abstract: A multimode source, such as a high-power laser diode bar, to pump an Nd3+ doped region defined in a cavity of a monolithic crystal structure. The axial length L1 of the doped region is chosen to optimize energy absorption from the multimode source while minimizing resonant re-absorption loss to unpumped Nd3+ ions. The next proximal cavity length L2 is an undoped region whose length is chosen to optimize the lowest order or fundamental spatial mode (“mode 9”) of the cavity. Advantageously, multi-parameter numerical optimization techniques may be employed in which the parameter set (e.g., doped length, L1, doping concentration, pump beam spot size, micro laser cavity length, and output coupler reflectivity) is varied to determine the overall optimal length L1opt.
    Type: Grant
    Filed: August 1, 2001
    Date of Patent: October 14, 2003
    Assignee: Lite Cycles, Inc.
    Inventors: James T. Murray, William Austin
  • Patent number: 6631153
    Abstract: The invention offers a low-noise, compact, high-efficiency light generating device and an irradiation method thereof for use in medical applications. A fundamental harmonic laser head 106 is composed of a quasi-continuous wave oscillation mode laser diode (QCW-LD) 101, a laser crystal 103, a rear mirror 104 and an output mirror 105. The QCW-LD 101 is driven by an LD power source 102 capable of modulating the pulse waveform in time. A beam adjusting portion 108 comprises a wave plate, a polarizer, a lens and an isolator. A wavelength converting portion 112 is an optical parametric oscillator (OPO) comprising a non-linear optical crystal 109, an OPO input mirror and an OPO output mirror 111.
    Type: Grant
    Filed: June 7, 2001
    Date of Patent: October 7, 2003
    Assignee: Cyber Laser Inc.
    Inventors: Tetsumi Sumiyoshi, Hitoshi Sekita, Akira Shiratori
  • Publication number: 20030185264
    Abstract: A diode-pumped solid-state laser oscillator optically pumps a laser medium. The oscillator has at least one pumping light source that emits light in a predetermined wavelength band, and a laser medium that absorbs light in the wavelength band. In the wavelength band, the optical absorption index of the laser medium increases with an increase in wavelength, and the optical radiation energy of the light source decreases with an increase in wavelength. Thus, with respect to wavelength changes, an increase in the optical absorption index is cancelled out by a decrease in the radiation energy, making the stability of the laser output less dependent on the temperature of the optical pumping medium or laser medium.
    Type: Application
    Filed: December 27, 2002
    Publication date: October 2, 2003
    Applicant: Communications Res. Lab., Ind. Admin. Inst.
    Inventor: Mitsuo Ishizu
  • Patent number: 6628692
    Abstract: A laser crystal is formed on a substrate in a solid-state laser device. The laser crystal oscillates laser beam from a second end face when an excitation beam is projected to a first end face. An excitation beam emission element emitting the excitation beam is provided for the solid-state laser device. A waveguide path is formed on the substrate. The excitation beam is transmitted through the waveguide path. The waveguide path has a first end portion on which the excitation beam emitted by the excitation beam emission element impinges and a second end portion which opposes the first end face of the laser crystal. The excitation beam is emitted from the second end portion.
    Type: Grant
    Filed: April 30, 1999
    Date of Patent: September 30, 2003
    Assignee: NEC Corporation
    Inventor: Tadashi Kasamatsu
  • Patent number: 6625193
    Abstract: Apparatus and method for achieving improved performance in a solid-state laser. The solid-state laser apparatus preferably uses a laser gain medium in the shape of a disk wherein optical pump radiation is injected into the peripheral edge of the disk. In the preferred embodiment the laser gain medium is provided with optical coatings for operation in the active mirror configuration. Furthermore, the laser gain medium is pressure-clamped to a rigid, cooled substrate, which allows it to maintain a prescribed shape even when experiencing significant thermal load. A cooling medium can be provided to a heat exchanger internal to the substrate and/or flowed through the passages on the substrate surface, thereby directly cooling the laser gain medium. Sources of optical pump radiation are placed around the perimeter of the gain medium. Tapered ducts may be disposed between the sources and the gain medium for the purpose of concentrating optical pump radiation.
    Type: Grant
    Filed: January 22, 2001
    Date of Patent: September 23, 2003
    Assignee: The Boeing Company
    Inventor: Jan Vetrovec
  • Patent number: 6625194
    Abstract: A laser beam generation apparatus includes a solid state laser medium having first and second optically polished planes provided opposed with each other to allow a laser beam to be pumped to pass out of one of the first and second optically polished planes. At least one third optical polished plane which is different from the first and second optically polished planes is also provided. A pumping beam source emits a pumping light beam to pump the laser medium and impinges the pumping light source to be incident on the at least one third optically polished plane. Further, the pumping laser beam is provided at an incident angle substantially equal to the Brewster angle.
    Type: Grant
    Filed: June 18, 1999
    Date of Patent: September 23, 2003
    Assignee: Sony Corporation
    Inventor: Yushi Kaneda
  • Patent number: 6625182
    Abstract: A semiconductor laser having an external cavity including a single-mode optical fiber. A Bragg grating is written onto the fiber which defines the end of the optical cavity, selects the lasing wavelength, and discriminates against the lasing of higher-order transverse modes in the multi-mode gain region. In one embodiment, the semiconductor laser includes an optically active vertical-cavity semiconductor stack similar to a vertical-cavity surface emitting laser. The stack is optically pumped either from the front or the back over a relatively large area such a multi-mode beam is output. Optics couple the multi-mode beam to the single-mode input of the fiber. A partially transmissive mirror of reflectivity between 25 and 40% may be placed on the output surface of the semiconductor stack to form a coupled-cavity laser. A plurality of laser diodes can be angularly positioned around the area of the semiconductor stack being pumped to increase the total pump power.
    Type: Grant
    Filed: April 20, 2000
    Date of Patent: September 23, 2003
    Assignee: Corning Incorporated
    Inventors: Dmitri V. Kuksenkov, John D. Minelly, Luis A. Zenteno
  • Patent number: 6621962
    Abstract: A semiconductor laser and an optical waveguide device with an optical waveguide formed at a surface of its substrate are provided on a submount. The semiconductor laser and the optical waveguide device are mounted with an active layer and a surface at which the optical waveguide is formed facing the submount, respectively. The submount is combined with the semiconductor laser or the optical waveguide device to form one body using an adhesive with a spacer, which maintains a substantially uniform distance therebetween, being interposed therebetween, so that position adjustment in the height direction can be made automatically and mounting can be carried out with high-precision optical coupling. Thus, an optical waveguide device integrated module and a method of manufacturing the same are provided, in which a semiconductor laser and a planar optical waveguide device are mounted with their positions in the height direction controlled with high precision.
    Type: Grant
    Filed: December 16, 2002
    Date of Patent: September 16, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yasuo Kitaoka, Toshifumi Yokoyama, Kazuhisa Yamamoto
  • Publication number: 20030169784
    Abstract: A laser oscillator has a resonator including a high reflector, an output coupler and a gain medium is positioned in the resonator. A diode pump source is provided, the pump source and gain medium create a lensing effect in the resonator. A shutter is positioned in the resonator and is configured to prohibit oscillation in the resonator until the lensing effect is stabilized. In one embodiment, diode-pumped laser oscillators are provided where damage to intracavity elements, such as SESAM'S, is prevented.
    Type: Application
    Filed: February 13, 2003
    Publication date: September 11, 2003
    Inventors: Dirk H. Sutter, James D. Kafka
  • Patent number: 6614966
    Abstract: A semiconductor laser and an optical waveguide device with an optical waveguide formed at a surface of its substrate are provided on a submount. The semiconductor laser and the optical waveguide device are mounted with an active layer and a surface at which the optical waveguide is formed facing the submount, respectively. The submount is combined with the semiconductor laser or the optical waveguide device to form one body using an adhesive with a spacer, which maintains a substantially uniform distance therebetween, being interposed therebetween, so that position adjustment in the height direction can be made automatically and mounting can be carried out with high-precision optical coupling. Thus, an optical waveguide device integrated module and a method of manufacturing the same are provided, in which a semiconductor laser and a planar optical waveguide device are mounted with their positions in the height direction controlled with high precision.
    Type: Grant
    Filed: March 7, 2001
    Date of Patent: September 2, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yasuo Kitaoka, Toshifumi Yokoyama, Kazuhisa Yamamoto
  • Publication number: 20030161364
    Abstract: A laser device and methods of lasing, the laser device comprising a chamber containing a volume formed therein and a gain medium within the volume. The gain medium comprises solid-state portions containing active laser ion suspended within a fluid which exhibits a refractive index which is substantially similar to that of the solid-state portions. In a variation, the gain medium is flowed through the volume, cooled externally of the volume and then flowed back through volume. In preferred form, the solid state portions are either naturally suspended within the fluid or are suspended by flow within the fluid. Thus, laser devices are provided in which the laser and the coolant are homogenized into a single gain medium exhibiting thermal properties of a liquid laser but with solid state gain material in order to produce high energy and high average power.
    Type: Application
    Filed: November 21, 2002
    Publication date: August 28, 2003
    Applicant: General Atomics
    Inventor: Michael D. Perry
  • Publication number: 20030161365
    Abstract: A laser device which may be used as an oscillator or amplifier comprising a chamber having a volume formed therein and a gain medium within the volume. The gain medium comprises solid-state elements containing active laser ion distributed within the volume. A cooling fluid flows about the solid-state elements and a semiconductor laser diode provides optical pump radiation into the volume of the laser chamber such that laser emission from the device passes through the gain medium and the fluid. The laser device provides the advantages of a solid-state gain medium laser (e.g., diode-pumping, high power density, etc), but enables operation at higher average power and beam quality than would be achievable from a pure solid-state medium.
    Type: Application
    Filed: November 21, 2002
    Publication date: August 28, 2003
    Applicant: General Atomics
    Inventors: Michael D. Perry, Paul S. Banks, Jason Zweiback, Robert W. Schleicher
  • Publication number: 20030161375
    Abstract: Methods and systems for laser-based processing of materials are disclosed wherein a scalable laser architecture, based on planar waveguide technology, provides for pulsed laser micromachining applications while supporting higher average power applications like laser welding and cutting. Various embodiments relate to improvements in planar waveguide technology which provide for stable operation at high powers with a reduction in spurious outputs and thermal effects. At least one embodiment provides for micromachining with pulsewidths in the range of femtoseconds to nanoseconds. In another embodiment, 100W or greater average output power operation is provided for with a diode-pumped, planar waveguide architecture.
    Type: Application
    Filed: November 13, 2002
    Publication date: August 28, 2003
    Inventors: David M. Filgas, Frank Haran, Andreas Mank, John Robertson
  • Patent number: 6611641
    Abstract: A high efficiency, high performance optical amplifier includes an amplification stage comprised of two Erbium doped fiber (EDF) gain sections separated by a variable optical attenuator (VOA). A single pump serves to pump both EDF sections. A high dynamic gain range is achieved by an interplay between the action of the VOA, and the pump energy absorption mechanisms in each gain section, which are dominated by the saturation characteristics of each of the EDFs. In a preferred embodiment of the method, input signals are coupled with a pump signal into a first EDF gain section in which the energy absorption mechanisms provide first amplified signals that are correlated with a residual pump signal. At the first EDF gain section output, the combined amplified signals and residual pump signal are decoupled, the amplified signals being attenuated in the VOA while the residual pump signal being routed around the VOA.
    Type: Grant
    Filed: October 30, 2001
    Date of Patent: August 26, 2003
    Assignee: Redc Optical Networks Ltd.
    Inventors: Uri Ghera, Yoav Sintov, Reuven Zaibel
  • Patent number: 6608852
    Abstract: A side-pumped, diode-pumped solid state laser device includes an elongated housing having an elongated cavity defined therein and further having an elongated opening defined between the cavity and the exterior of the housing. A solid state rod is disposed within the cavity and is preferably surrounded by a cooling fluid. A cover seal sealably covering the opening and thereby encloses the cavity. The cover seal is formed of a material that is at least substantially transparent to pumping radiation at a predetermined pumping wavelength. A diode array emits the pumping radiation that traverses the cover seal and the opening to be absorbed by the rod to excite laser active species within the rod. The laser device further includes a resonator including the rod disposed therein for generating a laser beam.
    Type: Grant
    Filed: August 21, 2001
    Date of Patent: August 19, 2003
    Assignee: Lameda Physik AG
    Inventors: Sergei V. Govorkov, Alexander Oliver Wolfgang Wiessner
  • Publication number: 20030147444
    Abstract: To provide a laser oscillation method and a laser device, which use a laser medium such as an Nd:GdVO4 crystal to which neodymium is doped in high concentration exceeding 1% in atomicity ratio, the laser medium comprised of the gadolinium-vanadate crystal to which neodymium as laser active ion is doped by a floating zone method such that concentration becomes exceeding 1% in atomicity ratio.
    Type: Application
    Filed: September 10, 2002
    Publication date: August 7, 2003
    Inventors: Satoshi Wada, Takayo Ogawa, Hideo Tashiro, Hiroshi Machida, Mikio Higuchi, Kohei Kodaira, Tomohiro Shonai
  • Publication number: 20030142706
    Abstract: The invention relates to a laser with a decoupling means for emitting a laser output depending on at least one influenceable parameter and a mode-coupling means for coupling a plurality of the laserable modes of the resonator. According to the invention, a detection means is provided for detecting a value related to the emitted laser output and a parameter varying means for varying the at least one parameter in response to the detected value.
    Type: Application
    Filed: November 7, 2002
    Publication date: July 31, 2003
    Inventors: Franz Xaver Kartner, Uwe Morgner, Thomas Richard Schibli
  • Patent number: 6600763
    Abstract: A solid-state laser includes a crystal wafer provided as an active medium, a cooling chamber for accommodating a cooling liquid, and an optically transparent support body. The crystal wafer has a flat side that faces the cooling chamber and a side that is remote from the cooling chamber. The flat side of the crystal wafer is in direct thermal contact with the cooling liquid. The cooling chamber has a wall element that is formed by the crystal wafer. The optically transparent support body is configured on the side of the crystal wafer that is remote from the cooling chamber. Since, the crystal wafer is in direct thermal contact with the cooling liquid, a minimal heat transfer resistance is ensured that even when the crystal wafer becomes deformed.
    Type: Grant
    Filed: February 21, 2002
    Date of Patent: July 29, 2003
    Assignee: Rofin-Sinar Laser GmbH
    Inventor: Klaus Ludewigt
  • Publication number: 20030138020
    Abstract: The invention includes also a sensor that includes at least one laser, at least one detector, and at least on lens system that includes a sensor surface having three individual surfaces that are virtually the same, and an object surface having two individual surfaces that are virtually the same.
    Type: Application
    Filed: November 11, 2002
    Publication date: July 24, 2003
    Applicant: Honeywell International Inc.
    Inventor: Bo Su Chen
  • Publication number: 20030138021
    Abstract: An edge-pumped solid state thin slab laser apparatus is disclosed that is power scalable to well over 150 W for either multimode or near single transverse mode operation. A slab thickness is selected that is small enough to minimize thermal effects for a straight through beam yet large enough to allow efficient direct coupling of pump light from high power diode array stacks while also keeping the gain to within manageable levels for pulsed operation. Cooling of the slab is provided conductively, preferably by contact with metal blocks of high thermal conductivity. The edge-pumped solid state thin slab laser provides a near-one dimensional temperature gradient and heat flow direction that is perpendicular to the laser signal plane of propagation. The width of the slab is selected so as to maximize pump absorption length for a given laser material and both one and two-sided pumping schemes can be accommodated by the basic slab laser platform, depending on power, mode and beam quality requirements.
    Type: Application
    Filed: November 13, 2002
    Publication date: July 24, 2003
    Inventors: Norman Hodgson, Hanna J. Hoffman, Wilhelm A. Jordan
  • Patent number: 6594297
    Abstract: A laser apparatus includes a semiconductor laser element, a surface-emitting semiconductor element including a first mirror, and a second mirror. The semiconductor laser element emits first laser light having a first wavelength. The surface-emitting semiconductor element is excited with the first laser light, and emits second laser light having a second wavelength which is longer than the first wavelength. The first mirror in the surface-emitting semiconductor element is arranged on one side of the first active layer. The second mirror is arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator in which the second laser light resonates. The surface-emitting semiconductor element includes a structure for controlling a spatial mode of the second laser light.
    Type: Grant
    Filed: September 11, 2000
    Date of Patent: July 15, 2003
    Assignee: Fuji Photo Film Co., Ltd.
    Inventor: Toshiro Hayakawa
  • Patent number: 6594299
    Abstract: A solid-state laser rod pumping module has a stack-type semiconductor laser including a plurality of bar-shaped components that are stacked in a direction parallel to the axis of a solid-state laser rod. Each bar-shaped component includes a plurality of laser-light-emitting portions that are aligned and integrated in a direction orthogonal to the axis of the solid-state laser rod. The large divergence angle of the stack-type semiconductor can be compensated by including a light focusing component for focusing laser light emitted out of the stack-type semiconductor laser. The focused light is guided by a laser light guiding component disposed in a diffusive reflection tube. A light guiding component guides the focused light onto a solid-state laser rod located within the diffusive reflective tube, while maintaining the length of one side of the cross section of the guided light.
    Type: Grant
    Filed: September 23, 1999
    Date of Patent: July 15, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshihito Hirano, Shuhei Yamamoto, Yasuharu Koyata, Nicolaie Pavel
  • Publication number: 20030128732
    Abstract: A laser oscillator comprises a laser medium, an optical excitation laser diode that irradiates the laser medium with light, a polarizer disposed on an optical path of the laser medium at a first end thereof, a first Porro prism disposed with the optical path coinciding with a point on a ridgeline thereof and with the ridgeline parallel or perpendicular to a plane of incidence of the polarizer, and a second Porro prism disposed on the optical path of the laser medium at a second end thereof with the optical path coinciding with a point on a ridgeline thereof. An angle formed by the two ridgelines of the first and second Porro prisms is a predetermined angle other than 0 degrees, 90 degrees, 60 degrees, 45 degrees and 36 degrees, 30 degrees.
    Type: Application
    Filed: December 30, 2002
    Publication date: July 10, 2003
    Applicant: Communications Res. Lab., Ind. Admin. Inst.
    Inventor: Mitsuo Ishizu
  • Patent number: 6587488
    Abstract: Parasitic oscillations are eliminated in solid-state laser components by applying a pattern of grooves to the peripheral sections that do not transmit the desired laser radiation. Additionally, the invention frustrates total internal reflections at polished peripheral component walls by providing a pattern of roughened surface sections in between polished sections. The roughened surfaces may be only microns deep or may be as deep as a few centimeters for large components. The grooves should be sufficiently deep as to inhibit any total internal reflections. The invention applies to all common solid-state architectures that are designed with polished surfaces that do not serve to propagate the desired laser radiation. Examples are slabs, plates, laser rods, waveguides and disks functioning as laser oscillators or amplifiers. The invention is operational with conventional crystal or glass laser hosts or with hosts that are composites of same, similar or dissimilar crystals or glasses.
    Type: Grant
    Filed: November 8, 2000
    Date of Patent: July 1, 2003
    Assignee: Maxios Laser Corporation
    Inventors: Helmuth E. Meissner, Scott C. Mitchell
  • Patent number: 6584134
    Abstract: According to the invention, a high power diode pumped solid state laser is provided. The laser includes a first and second reflective surfaces which form an optical resonator cavity. A laser medium, particularly a Nd doped laser medium for example: a Nd:YAG, a Nd:YLF, or a Nd:YVO4 crystal is provided within the laser cavity. A fundamental frequency laser beam propagates from the front and back ends of the laser medium. The first reflective surface is highly reflective for fundamental beam. The second reflective surface is at least partially reflective for fundamental beam. The laser medium is end pumped by at least one diode pumping apparatus for example, a laser diode, or diode array, or fiber coupled laser diodes, whose wavelength matches at least one laser medium absorption band. The diode pumping apparatus is located adjacent either the front end or the back end of the laser medium, or both. The optical resonator cavity is configured to provide a laser beam diameter in the laser medium from about 0.
    Type: Grant
    Filed: December 19, 2001
    Date of Patent: June 24, 2003
    Assignee: Photonics Industries International, Inc.
    Inventors: Yusong Yin, Peili Chen, Dmitry Donskoy
  • Patent number: 6580738
    Abstract: Heating at the end face while operating in a high output is prevented and reliability improves in a semiconductor laser device. On an n-GaAs substrate, laminated are n-Alz1Ga1-z1As lower cladding layer, an n- or i-In0.49Ga0.51P lower optical waveguide layer, an Inx3Ga1-x3As1-y3Py3 quantum well active layer, a p- or i-In0.49Ga0.51P upper first optical waveguide layer, a GaAs cap layer and SiO2 film. Then a width of about 20 &mgr;m of the SiO2 film is removed inwardly from the cleaved surface. Using the SiO2 film as a mask, the cap layer near the end face and the upper first optical waveguide layer are removed. Then the SiO2 film, the quantum well active layer near the end face and the remaining cap layer are removed. A p- or i-In0.49Ga0.51P upper second optical waveguide layer, a p-Alz1Ga1-z1As upper cladding layer and a p-GaAs contact layer are deposited thereon.
    Type: Grant
    Filed: June 8, 2001
    Date of Patent: June 17, 2003
    Assignee: Fuji Photo Film Co., Ltd.
    Inventor: Toshiaki Fukunaga
  • Patent number: 6580741
    Abstract: An integrated optically pumped vertical cavity surface emitting laser (VCSEL) is formed by integrating an electrically pumped in-plane semiconductor laser and a vertical cavity surface emitting laser together with a beam steering element formed with the in-plane semiconductor laser. The in-plane semiconductor laser can be a number of different types of in-plane lasers including an edge emitting laser, an in-plane surface emitting laser, or a folded cavity surface emitting laser. The in-plane semiconductor laser optically pumps the VCSEL to cause it to lase. The in-plane semiconductor laser is designed to emit photons of relatively short wavelengths while the VCSEL is designed to emit photons of relatively long wavelengths. The in-plane semiconductor laser and the VCSEL can be coupled together in a number of ways including atomic bonding, wafer bonding, metal bonding, epoxy glue or other well know semiconductor bonding techniques. The beam steering element can be an optical grating or a mirrored surface.
    Type: Grant
    Filed: June 18, 2002
    Date of Patent: June 17, 2003
    Assignee: E2O Communications, Inc.
    Inventors: Wenbin Jiang, Hsing-Chung Lee, Yong Cheng
  • Patent number: 6577435
    Abstract: An optical wavelength converter based on cross-gain modulation with wide input dynamic range, the converter including a semiconductor optical amplifier, a continuous wave source, and a probe beam controller. The semiconductor optical amplifier modulates probe power on the basis of pump power. The continuous wave source generates the probe beam and supplies the generated probe beam to the semiconductor optical amplifier. The probe beam controller adjusts bias current supplied to the continuous wave source and controls the probe power in proportion to the pump power.
    Type: Grant
    Filed: October 12, 1999
    Date of Patent: June 10, 2003
    Assignee: Electronics And Telecommunications Research Institute
    Inventors: Joon-Hak Bang, Jong-Hyun Lee, Jung-Hee Han, Sung-Un Lee, Sang-Rok Lee
  • Publication number: 20030098348
    Abstract: A method for operating a code reader and a code reader. According to the method, laser light is transmitted from a laser light source to illuminate an object having a code, wherein the laser light is amplitude-modulated to reduce the speckle noise of the light illuminating the object. Reflected or re-emitted light from the object is received by a light receiver. According to the code reader, the code reader includes a light transmitter having a laser light source adapted for transmitting laser light to illuminate an object having a code. The code reader also includes a light receiver arranged for receiving reflected or re-emitted light from the object and for producing electrical signals corresponding to the received light. The code reader also includes a modulation apparatus that modulates the laser light source such that amplitude-modulated light can be transmitted from the laser light source to the object.
    Type: Application
    Filed: November 7, 2002
    Publication date: May 29, 2003
    Applicant: SICK AG
    Inventor: Richard Nopper
  • Publication number: 20030099272
    Abstract: A new class of lasers is provided that can be pumped by conventional high-power, multi-mode, broadband 1-D and 2-D laser diode arrays, where the pumped laser gain medium comprises an atomic vapor of one the alkali elements (Li, Na, K, Rb or Cs), buffered with a mixture of rare-gas (He, Ar, Kr, Ne or Xe) and selected molecular gases. The alkali atom gain medium is pumped at a wavelength matching the wavelength of the 2S1/2−2P3/2 electric-dipole-allowed transition (the D2 transition). After kinetic relaxation of pump excitation to the excited 2P1/2 electronic level, laser emission takes place on the 2P1/2−2S1/2 transition (the D1 transition).
    Type: Application
    Filed: October 23, 2001
    Publication date: May 29, 2003
    Inventor: William F. Krupke
  • Patent number: 6567442
    Abstract: A laser device which has an excellent characteristic originally exerted by an yttrium-aluminum-garnet crystal doped with neodymium and is entirely reduced in size by using an entirely downsized laser medium is provided. The laser device is constituted such that a laser medium is disposed in a resonator, excited light is incident upon the laser medium so as to cause laser oscillation in the resonator, and laser light is emitted from the resonator. An yttrium-aluminum-garnet single crystal is used as the laser medium, in which neodymium is added at a concentration exceeding an atomicity ratio of 1.3%.
    Type: Grant
    Filed: February 9, 2001
    Date of Patent: May 20, 2003
    Assignee: Riken
    Inventors: Yoshiharu Urata, Satoshi Wada, Hideo Tashiro
  • Patent number: 6567455
    Abstract: A semiconductor laser excitation solid laser of the invention has a solid laser medium, a semiconductor laser for exciting the solid laser medium, a spectrometer for detecting a wavelength region of a radiation spectrum of the semiconductor laser for exciting the solid laser medium, computation means such as a comparator for normalizing an area of the detected spectrum detected by the spectrometer and computing an overlap area between the normalized detected spectrum and a normalized absorption spectrum involved in laser excitation of the solid laser medium, and temperature control means for controlling the temperature of the semiconductor laser based on the output from the computation means.
    Type: Grant
    Filed: May 21, 2001
    Date of Patent: May 20, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Shinji Sato, Kyoko Motoike
  • Publication number: 20030086446
    Abstract: Light from a first excitation light source is incident on one facet of a first optical fiber. A core is doped with a first rare earth substance. A resonant section induces light resonance in the core to generate resonant light, thereby providing selected light at the other facet of the first optical fiber. An optical multi/demultiplexer reflects the light of the selected wavelength in a direction different from that of the first optical fiber. A second excitation light source supplies light to the resonant section of the first optical fiber via the optical multi/demultiplexer and the other facet of the first optical fiber. A second optical fiber guides the light of the selected wavelength from the optical multi/demultiplexer to an exterior.
    Type: Application
    Filed: October 2, 2002
    Publication date: May 8, 2003
    Inventors: Tooru Sugiyama, Naoki Akamatsu, Kiyoyuki Kawai, Hideaki Okano
  • Publication number: 20030081644
    Abstract: In the basic Diode-Pumped Alkali Laser (DPAL) device, excitation to the n 2P3/2 electronic level by a single diode laser pump source leads to a population inversion between the first excited electronic 2P1/2 level and the ground 2S1/2 level, permitting the construction of efficient, high-power, compact DPAL laser oscillators in the near infrared spectral region. The present invention extends the single-step excitation DPAL to a two-step excitation, or up-conversion DPAL to produce efficient, powerful laser operation in the visible blue and near UV spectral regions (viz., in the range 460-323 nm). The present invention describes an apparatus and method that efficiently sums the energy of two, near-infrared diode pump photons in alkali vapor atoms, followed by stimulated emission to their electronic ground levels.
    Type: Application
    Filed: December 17, 2001
    Publication date: May 1, 2003
    Inventor: William F. Krupke
  • Patent number: 6556611
    Abstract: A diode laser comprises a laser cavity defining a linear optical-path axis, and a current-pumped stripe region, said current-pumped stripe region being disposed within said laser cavity. The laser cavity includes an output surface perpendicular to the optical axis; and a reflection surface including a distributed Bragg reflector (DBR) grating and being disposed at a non-perpendicular angle to the optical-path axis.
    Type: Grant
    Filed: December 20, 1999
    Date of Patent: April 29, 2003
    Assignee: Princeton Lightwave, Inc.
    Inventors: Viktor Borisovich Khalfin, Dmitri Zalmanovich Garbuzov, Louis Anthony DiMarco, John Charles Connolly
  • Patent number: 6556610
    Abstract: Semiconductor lasers are formed by integrating an electrically pumped semiconductor laser, a beam steering element and a vertical cavity surface emitting laser (VCSEL) together. The electrically pumped semiconductor laser is modulated to modulate a pump beam of photons at a first wavelength. The beam steering element directs the pump beam to the VCSEL to provide optical pumping. The VCSEL receives the pump beam of photons at the first wavelength and is stimulated to emit photons of a laser beam at a second wavelength longer than the first. In embodiments, index guiding is provided in the VCSEL to improve the optical pumping and emission efficiencies when the pump beam is modulated at high frequencies. Embodiments of the beam steering element include a silicon bench, a polymer element, and a facet included in the edge emitting laser and an external mirror. Embodiments of index guiding include an air gap to form a mesa and an oxide confinement ring shaped layer.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: April 29, 2003
    Assignee: E20 Communications, Inc.
    Inventors: Wenbin Jiang, Chan-Long Shieh, Xiqing Sun, Jeff Tsao, Hsing-Chung Lee
  • Patent number: 6553048
    Abstract: Modulated integrated optically pumped vertical cavity surface emitting lasers are formed by integrating an electrically pumped semiconductor laser and a vertical cavity surface emitting laser (VCSEL) together with a means of direct modulation of the electrically pumped semiconductor laser. In the preferred embodiments, the electrically pumped semiconductor laser is a type of folded cavity surface emitting laser (FCSEL). In a number of embodiments, the FCSEL is partitioned into two sections by a gap in material layers. In these embodiments, one section of the FCSEL is biased so as to maintain the generation of photons at a constant power level to pump the optically pumped VCSEL while the second section of the FCSEL is used for modulation and causes the optically pumped VCSEL to be modulated above the threshold. In another embodiment, an electric-absorption modulator is sandwiched between an electrically pumped FCSEL and an optically pumped VCSEL.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: April 22, 2003
    Assignee: E2O Communications, Inc.
    Inventors: Wenbin Jiang, Hsing-Chung Lee
  • Patent number: 6553052
    Abstract: An optically pumped solid-state laser in which an oscillator and optical amplifier are pumped by a common laser diode pump, with the pump beam first pumping the optical amplifier and a residual pump beam transmitted through the amplifier pumping the oscillator. Such an arrangement permits the use of high power laser diode arrays with poor focusability beams to be used as the laser pump to produce high energy laser pulses at least an order of magnitude greater than provided by the prior art and greatly expands the applications of such a solid-state laser.
    Type: Grant
    Filed: October 16, 2000
    Date of Patent: April 22, 2003
    Assignee: Advanced Optical Technology Ltd.
    Inventor: Clive Lionel Michael Ireland
  • Patent number: 6542661
    Abstract: A method for upgrading bandwidth in a fiber optic system utilizing Raman amplification and having an initial band capacity provided by a plurality of pumps including the steps of identifying a fiber optic system to be upgraded, activating at least one new pump in the fiber optic system necessary to provide upgraded band capacity to the fiber optic system while retaining the initial band capacity provided by the plurality of pumps, and adjusting power of at least one pump of the fiber optic system to minimize gain ripple or signal output ripple.
    Type: Grant
    Filed: April 6, 2001
    Date of Patent: April 1, 2003
    Assignee: Corning Incorporated
    Inventors: Alan F. Evans, Ashiqur Rahman, George F. Wildeman
  • Patent number: 6539044
    Abstract: A solid state laser device according to the present invention comprises a pumping semiconductor laser 11 for oscillating a laser light as a pumping light, a collimator lens 12 for leading the laser light to parallel rays, a focusing lens 21 for focusing the laser light led to the parallel rays by the collimator lens 12 and leading the focused laser light to a laser medium 22, the laser medium 22 for absorbing the laser light and outputting a spontaneous emission light and an optical resonator 25 for confining the spontaneous emission light to make the laser light oscillated by an induced emission, wherein the solid state laser device includes a housing 10 for storing the a pumping semiconductor laser 11 and the collimator lens 12 in a state of positioning them on the same optical axis 16, and a housing 20 for housing the focusing lens 21, the laser medium 22 and the optical resonator 25 in a state of positioning them on the same optical axis, and the housings are detachable.
    Type: Grant
    Filed: August 29, 1997
    Date of Patent: March 25, 2003
    Assignee: Shimadzu Corporation
    Inventor: Nobuyuki Kuzuta
  • Publication number: 20030053509
    Abstract: The present invention has applications in high-bandwidth communications systems and other applications that utilize modulated optical energy. In one aspect of the invention, a short cavity diode-pumped laser generates optical energy that may be modulated over a wide range of frequencies. In one embodiment, the short cavity diode-pumped laser may be modulated at rates up to 15 GHz. The short cavity diode-pumped laser may include a laser diode modulator and a laser coupled to the laser diode modulator having a cavity lifetime of less than about 100 picoseconds.
    Type: Application
    Filed: August 28, 2001
    Publication date: March 20, 2003
    Inventor: Richard Scheps