Abstract: A method of producing a nitride semiconductor laser device includes forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.

Abstract: A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflection mirror of a first conduction type; an active region; a second semiconductor multilayer reflection mirror of a second conduction type; a first selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a first oxidized region selectively oxidized, and a first conductive region surrounded by the first oxidized region; and a second selectively oxidized layer that is formed in one of the first and second semiconductor multilayer reflection mirrors and includes a second oxidized region selectively oxidized, and a second conductive region surrounded by the second oxidized region.

Abstract: A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.

Abstract: A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body.

Abstract: A surface emitting laser comprises an underlayer, an active layer formed on the underlayer, a slab layer formed on the active layer and having a photonic crystal structure optically combined with the active layer, and a metal thin film formed on the slab layer and having a periodic fine structure; and enabling taking-out of the light beam propagating in a layer-plane direction in the slab layer through the metal thin film.

Abstract: A light source device for a display device for projecting an image on a screen is provided, the light source device for display device including a light source unit operable to output light; an image outputting unit operable to output an image by giving an image signal to the light; and a control circuit operable to switch the image output from the image outputting unit between a normal image and a mirror reversed image formed by reversing the normal image right and left by controlling the image signal, such that outputting type is switched between a front projection in which the image is projected onto the screen from a front on the same side as the viewing side, and a rear projection in which the image is projected onto the screen from a rear plane on the opposite side to the viewing side.

Abstract: A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm?2 or more, a crystalline semiconductor structure located on the substrate and having an active layer, an insulating film located on the semiconductors structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L ?m2 or less.

Abstract: A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser element. A second electrode is arranged on the surface of the first semiconductor laser element with the first insulating film interposed therebetween and connected to the second semiconductor laser element. The first semiconductor laser element has an optical waveguide formed in a region where the second semiconductor laser element is not bonded while the first electrode is arranged on the region, and the second electrode is formed to extend from between the second semiconductor laser element and first insulating film toward the region.

Abstract: A movable electrode assembly for use in laser system includes a first electrode, a second electrode arranged opposite from the first electrode, the second electrode being spaced apart from the first electrode by a discharge gap and a discharge gap adjuster interfaced with at least one of the second electrode or the first electrode, the discharge gap adjuster configured to adjust the discharge gap. A movable electrode assembly for integration into a housing of a laser system includes a first electrode having a discharge surface, a second electrode having a discharge surface, such that the discharge surface of the first electrode and the discharge surface of the second electrode face each other in a spaced apart setting that defines a desired discharge gap, and a mechanism for moveably adjusting the spaced apart setting toward the desired discharge gap. A method of adjusting a discharge gap is also disclosed.

Abstract: An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N?2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting portion, a second recess that is partly discontinuous is provided outside an Nth light-emitting portion.

Abstract: A slab type laser apparatus has a slab type gas laser medium part formed in a region defined by a pair of electrode flat plates oppositely disposed in parallel with each other in a space to be filled with a gas laser medium which is excited by high-frequency electric power. The apparatus includes an oscillator part including a pair of resonator mirrors oppositely disposed with a part of the gas laser medium part in between, and for amplifying a laser beam to have predetermined light intensity to emit the laser beam, and the amplifier part including a plurality of return mirrors oppositely disposed with a part of the gas laser medium part in between. The incident laser beam goes and returns plural times between the return mirrors, and the laser beam is amplified to have predetermined power.

Abstract: A CO2 gas discharge laser includes elongated planar live and ground electrodes vertically spaced and electrically insulated from each. The electrodes are spaced apart by ceramic spacer strips arranged along the edges of the electrodes. An auxiliary electrode is located at each end of the live electrode, co-planar with the live electrode, longitudinally spaced part from the live electrode vertically spaced apart from, but electrically connected to, the ground electrode. The auxiliary electrode has two raised portions spaced apart by a distance less than the distance between inside edges of the ceramic strips. The raised portions of the auxiliary electrode prevent erosion of the ceramic strips by laser radiation generated in the resonator when the laser is operating.

Abstract: A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film.

Abstract: A surface emitting laser which oscillates at a wavelength ? of a blue band, including a photonic crystal layer including a photonic crystal structure, an active layer provided on one surface of the photonic crystal layer, and an electrode provided on the other surface of the photonic crystal layer for injecting electric current into the active layer. The photonic crystal structure has a thickness of 100 nm or more. A laser beam is emitted toward a direction opposite to a side of the photonic crystal layer on which the electrode is provided.

Abstract: One objective of the present invention is to provide a laser device which is capable of scanning beams of a laser light of high output power at a high speed without using mechanical scanning mechanisms. A plurality of the upper electrodes 33 is linearly arranged in the photonic crystal laser provided with an active layer 21 and a two-dimensional photonic crystal layer 23 which are held between upper electrodes 33 and a lower electrode 27. A current is introduced from one upper electrode 33 or the plurality of the upper electrodes 33 disposed adjacently. Therefore, the active layer 21 generates light and the light is intensified by diffraction in the two-dimensional photonic crystal layer 23, so that a stronger laser light is emitted to the outside from around the upper electrodes 33 into which a current is introduced. When the current-injected upper electrodes are sequentially switched, a laser light scan is performed in the direction of the array of the upper electrodes.

Abstract: Disclosed herein are systems and methods for extending one or both of the discharge electrodes in a transverse discharge gas laser chamber in which one or both the electrodes are subject to a dimensional change due to erosion. Electrode extension can be performed to increase the chamber life, increase laser performance over the life of the chamber, or both. Operationally, the inter-electrode spacing may be adjusted to maintain a specific target gap distance between the electrodes or to optimize a specific parameter of the laser output beam such as bandwidth, pulse-to-pulse energy stability, beam size, etc.

Abstract: A semiconductor laser device includes: a laminated body including an active layer, a cladding layer provided on the active layer, and a contact layer provided on the cladding layer, the laminated body having a first and second end face forming a resonator for light emitted from the active layer; and an electrode provided on the contact layer and including an ohmic section injecting a current into the active layer and a first current adjustment section provided between one end of the ohmic section and the first end face. The ohmic section contains a metal which has a smaller work function than any metal constituting the current adjustment section.

Abstract: It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

Abstract: A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto.

Abstract: A gas discharge laser includes elongated discharge electrodes having an active surface width that varies along the length of the resonator. In one example each of the electrodes is formed by a row of pins having a circular active surface. The pins are diametrically aligned with the active surfaces generally coplanar.

Abstract: In one embodiment of the present invention, a long-life nitride semiconductor laser element is disclosed wherein voltage characteristics do not deteriorate even when the element is driven at high current density. Specifically disclosed is a nitride semiconductor laser element which includes a p-type nitride semiconductor and a p-side electrode formed on the p-type nitride semiconductor. In at least one embodiment, the p-side electrode has a first layer which is in direct contact with the p-type nitride semiconductor and a conductive second layer formed on the first layer, and the second layer contains a metal element selected from the group consisting of Ti, Zr, Hf, W, Mo and Nb, and an oxygen element.

Abstract: A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.

Abstract: There is described a gas laser comprising a pair of substantially mutually parallel and opposed electrodes (17, 37), between which a volume is defined containing a gas in which said electrodes generate a discharge. At opposed ends of the electrodes, in said volume, mirrors (65) are arranged to define a resonant cavity. The electrodes form an integral part of two portions (5, 7) of a sealed housing (1), containing the gas and in which the mirrors and the electrodes are housed.

Abstract: Arcing is minimized in a discharge chamber of a gas laser system by utilizing an electrode which comprises a surface portion capable of functioning as one of an anode and a cathode in order to energize a gas mixture in a discharge chamber of the gas discharge laser system, a shoulder portion being positioned on either side of the surface portion and being exposed to the gas mixture, and a coating layer made of electrically insulating material, wherein the coating layer is attached to the shoulder portion by a cold spraying method.

Abstract: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

Abstract: A semiconductor laser assembly includes a substrate 10 having a first mount surface 10a and a second mount surface 10b, and a submount 3 which is mounted on the first mount surface 10a and which is separate from a monitoring photodiode 4. A laser diode 1 is mounted on the submount 3. The monitoring photodiode 4 is mounted on the second mount surface 10b, and an electrode 4a formed on the monitoring photodiode 4 is used as a relay electrode for a metal wire 5a connected to an upper-surface electrode of the laser diode 1.

Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.

Abstract: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump lasers for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability. This is achieved by separating the waveguide ridge into an active main ridge section (4) and at least one separate section (12) located at an end of the laser diode, which may be passive. The separation is provided by a trench or gap (10) in the waveguide ridge.

Abstract: A method for producing an optical output, including the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling electrical potentials with respect to the collector and emitter electrodes; providing an optical coupling in optical communication with the base region; providing first and second base electrodes coupled with the base region; and coupling the first and second electrical signals with the first and second base electrodes, respectively, to produce an optical output emitted from the base region and coupled into the optical coupling, the optical output being a function of the first and second electrical signals.

Abstract: There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

Abstract: A semiconductor laser device and an image display device that efficiently release a heat from stripe active regions, and operated at a low-consumption current and a low-consumption electric power. A semiconductor laser element includes stripe active regions for emitting laser beams. On a base block, there are formed wirings electrically connected to stripe laser electrodes of the semiconductor laser element, respectively. The stripe laser electrodes corresponding to the stripe active regions are formed in proximity to a first surface of the semiconductor laser element, close to the active regions. An electric current is supplied to the active regions from connecting portions between each of the laser electrodes and the wirings.

Abstract: A semiconductor laser device includes: an electrically insulating film on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shape with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.

Abstract: A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from the contact layer to a predetermined depth of the p-type clad layer; a stripe-shaped ridge sandwiched between two separation grooves; an insulating layer covering an area from each side wall of the contact layer of each ridge to an end of the partitioning region via the separation groove; a first electrode formed on a second plane of the substrate; and a second electrode formed in each partitioning region covering an area above the ridge, separation grooves and multilayer semiconductor layers outside the separation grooves, the second electrode being constituted of a lower second electrode layer and an upper second plated layer.

Abstract: A driver laser for EUV light source apparatus which driver laser simultaneously achieves short-pulsing and multi-line oscillation. The driver laser includes: a short-pulse multi-line oscillated CO2 laser oscillator having a device that shortens width of pulses included in a laser beam to be output and a device that suppresses amplitude of an oscillation spectrum exhibiting an energy peak value; and at least one amplifier that inputs the laser beam output from the short-pulse multi-line oscillated CO2 laser oscillator and amplifies the input laser beam to output the amplified laser beam.

Abstract: A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm?2 or more, a crystalline semiconductor structure located on the substrate and having an active layer, an insulating film located on the semiconductor structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L ?m2 or less.

Abstract: An optical semiconductor element includes: a surface-emitting type semiconductor laser that emits laser light; a photodetecting element formed above the surface-emitting type semiconductor; a first electrode of a first polarity formed on the surface-emitting type semiconductor laser; a second electrode of a second polarity different from the first polarity formed on the photodetecting element; and an additional electrode that covers the first electrode and the second electrode.

Abstract: A surface emitting laser includes an active layer disposed on a semiconductor substrate, and a pair of upper and lower electrodes for injecting carriers into the active layer. The plane surface of the lower electrode is shaped into a star so that injection of current into the active layer from the lower electrode is carried out with a high density at the center of the lower electrode and with a low density at its periphery part. In the surface emitting laser, the density distribution of the carriers injected into the active layer corresponds to the power distribution of light inside the active layer. Thereby, hole burning due to an increase in the current density in the region of the active layer corresponding to the peripheral part of the electrode is avoided, and the transverse mode stability during high output operation is significantly enhanced to improve high-output characteristic.

Abstract: A pulsed gas discharge laser operating at an output laser pulse repetition rate of greater than 4 kHz and a method of operating same is disclosed which may comprise a high voltage electrode having a longitudinal extent; a main insulator electrically insulating the high voltage electrode from a grounded gas discharge chamber; a preionizer longitudinally extending along at least a portion of the longitudinal extent of the high voltage electrode; a preionization shim integral with the electrode extending toward the preionizer. The preionizer may be formed integrally with the main insulator. The preionization shim may substantially cover the gap between the electrode and the preionizer.

Abstract: A tunable semiconductor laser device includes a wavelength control region that is formed to include an active layer formed above a semiconductor substrate in an optical waveguide which guides the light generated by the active layer and that includes in at least one portion a diffraction grating which selects light having a predetermined wavelength from the light generated by the active layer, a cladding layer, an insulation film formed above the cladding layer, a first driving electrode formed below the semiconductor substrate, a second driving electrode formed above the cladding layer, a heating portion that is formed above the insulation film and that is used to heat at least one portion of the wavelength control region, first and second heating terminals provided in the heating portion, and first and second connection lines that connect in series between the first and second driving electrodes through a power source.

Abstract: A nitride semiconductor device 100 according to the present invention includes: an n-GaN substrate 1; a semiconductor multilayer structure, which has been formed on the principal surface of the n-GaN substrate 1 and which includes a p-type region and an n-type region; a p-electrode 32, which makes contact with a portion of the p-type region included in the semiconductor multilayer structure; and an n-electrode 34, which is arranged on the bottom surface of the substrate 1. The bottom surface of the substrate 1 includes a roughened region 40a and a flattened region 40b. And the n-electrode 34 covers the roughened region 40a at least partially.

Abstract: The invention relates to high power broad-area semiconductor lasers incorporating a structure that provides both gain guiding and index guiding. The lateral width of the index guiding region is greater than the lateral width of the gain guiding region by at least 20 micron. This results in a high power broad-area semiconductor laser which has reduced lateral divergence of the output beam.

Abstract: A laser chamber is provided that increases power, initiation, and discharge efficiency over single chamber lasers by providing a multi-fold laser chamber, protrusions, discharge segmentation and inversion techniques.

Abstract: The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section, a current blocking section and a partially current blocking section.

Abstract: In an arrangement comprised of an electro-absorption modulator integrated with a laser source, the electro-absorption modulator includes a respective metal contact pad, wherein the metal pad is positioned over a localised semi-insulating layer island, such as a Fe—InP island.

Abstract: In a CO2 laser a pre-ionizer is assembled in a flange configured to be attached to a laser-gas enclosure of the laser over an aperture in a wall of the enclosure. An aperture in the base of the flange is aligned over the aperture in the enclosure wall. The aperture in the pre-ionizer flange is covered by a ceramic membrane. A disc electrode is in contact with the ceramic membrane on a side of the membrane outside of the laser-gas enclosure. An RF potential applied to the disc electrode creates a corona discharge on the side of the ceramic membrane inside the enclosure. The corona discharge ionizes laser gas in the enclosure before RF power is applied to electrodes of the slab laser.

Abstract: A corona-discharge type, preionizer assembly for a gas discharge laser is disclosed. The assembly may include an electrode and a hollow, dielectric tube that defines a tube bore. In one aspect, the electrode may include a first elongated 0o conductive member having a first end disposed in the bore of the tube. In addition, the electrode may include a second elongated conductive member having a first end disposed in the bore and spaced from the first end of the first conductive member. For the assembly, the first and second conductive members may be held at a same voltage potential.

Abstract: A fluorine gas discharge laser electrode for a gas discharge laser having a laser gas containing fluorine is disclosed which may comprise a copper and copper alloy cathode body having an upper curved region containing the discharge footprint for the cathode comprising copper and a lower portion comprising a copper alloy, with the facing portion of the electrode if formed in a arcuate shape extending into straight line portions on either side of the arcuate portion, the straight line portions terminating in vertical straight sides, with the boundary between the copper including at least the arcuate portion, the electrode may comprise a bonded element machined from two pieces of material the first made of copper and the second made of a copper alloy bonded together before machining.

Abstract: A nitride semiconductor laser device of the present invention has an electrical connection point which is provided outside of a pair of trenches in the surface of an upper electrode layer so as to make an electrical connection to the outside. The thickness between the surface of the upper electrode layer and a nitride semiconductor growth layer in the electrical connection point is larger than the thickness between the upper electrode layer and the nitride semiconductor growth layer immediately above a ridge.

Abstract: In a CO2 laser a pre-ionizer is assembled in a flange configured to be attached to a laser-gas enclosure of the laser over an aperture in a wall of the enclosure. An aperture in the base of the flange is aligned over the aperture in the enclosure wall. The aperture in the pre-ionizer flange is covered by a ceramic membrane. A disc electrode is in contact with the ceramic membrane on a side of the membrane outside of the laser-gas enclosure. An RF potential applied to the disc electrode creates a corona discharge on the side of the ceramic membrane inside the enclosure. The corona discharge ionizes laser gas in the enclosure before RF power is applied to electrodes of the slab laser. A cylindrical ceramic sleeve extends from the membrane for containing the discharge.

Abstract: A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than ?/2 radians and within ? radians, centering on the light emitting portion.