Crystalography Patents (Class 378/73)
  • Patent number: 5414747
    Abstract: An accurate, real-time method for monitoring and analyzing crystalline specimens having polycrystalline platings. The method is capable of individual or simultaneous analysis of any combination of the following: 1) composition of the substrate and plating (even when the plating and substrate having common elements); 2) analysis of thickness of the plating(s); 3) analysis of the depth of the plating(s), e.g., the thickness of any overlay; 4) analysis of the crystalline phase depth simultaneous with phase composition; 5) the preferred crystalline orientation; 6) the strain in the substrate; and (7) crystallinity and grain size. The apparatus is similar to that of U.S. Pat. No. 5,148,458 issued to Ruud, with the apparatus of this invention having the several detectors placed on different arcs and/or radial distances from the specimen surface under investigation.
    Type: Grant
    Filed: January 31, 1994
    Date of Patent: May 9, 1995
    Assignee: The Penn State Research Foundation
    Inventors: Clayton O. Ruud, Mark E. Jacobs
  • Patent number: 5406609
    Abstract: An X-ray analysis apparatus including an artificial multi-layered grating for rendering X-ray beams to be monochromatic before they are incident on a specimen to be analyzed. This artificial multi-layered grating operates to diffract the X-ray beam, generated from an X-ray radiation source and subsequently impinging on a reflective surface of the artificial multi-layered grating, at a predetermined angle of diffraction to provide the monochromatic X-ray beams. The periodicity of the spacing of lattice planes of the artificial multi-layered grating is so chosen as to be of a value progressively varying along the reflective surface thereof with an increase in distance from the X-ray radiation source. The X-ray analysis apparatus herein disclosed is designed to avoid any possible reduction of the intensity of the X-ray beams which would occur when they are rendered to be monochromatic, and to increase the intensity of the X-ray beams to ensure an improved accuracy in spectroscopic analysis.
    Type: Grant
    Filed: April 9, 1993
    Date of Patent: April 11, 1995
    Assignee: Rigaku Industrial Corporation
    Inventors: Tomoya Arai, Takashi Shoji
  • Patent number: 5363238
    Abstract: The present invention discloses diffraction gratings which do not generate any thermal strain and can perform extremely high-precision and high-efficiency diffraction nearly free from scattered beams. The diffraction gratings are built by allowing the chemically deposited film of silicon carbide whose crystal planes are strongly oriented to the (220) planes in terms of Miller indices to form on the substrate comprising sintered silicon carbide, polishing the surface of the deposited film to 5 .ANG. RMS or less, and directly etched laminar-type grating grooves on that surface by using ion-beam etching.
    Type: Grant
    Filed: May 24, 1993
    Date of Patent: November 8, 1994
    Assignees: Nippon Packing Co., Ltd., Shimadzu Corporation
    Inventors: Yasuhiro Akune, Kichiya Tanino, Masaru Koeda, Tetsuya Nagano, Kazuo Sano, Eiji Ishiguro
  • Patent number: 5353324
    Abstract: A method for detecting and evaluating crystal defects existing in the extreme neighborhood of the surface of a crystal specimen through the use of X-ray analyzing micrography. Synchrotron radiation is used as the X-ray source. A monochromatic X-ray beam generated from the synchrotron radiation is directed into the crystal specimen at a glancing angle smaller than the critical angle of said crystal specimen relative to said monochromatic X-ray beam. The diffracted X-rays from the crystal specimen due to asymmetrical reflection are detected in order to observe the resulting diffracted image.
    Type: Grant
    Filed: April 8, 1992
    Date of Patent: October 4, 1994
    Assignee: NEC Corporation
    Inventor: Tomohisa Kitano
  • Patent number: 5287395
    Abstract: A double crystal monochromator including two identical, parallel crystals, each of which is cut such that the normal to the diffraction planes of interest makes an angle less than 90 degrees with the surface normal. Diffraction is symmetric, regardless of whether the crystals are symmetrically or asymmetrically cut, enabling operation of the monochromator with a fixed plane of diffraction. As a result of the inclination of the crystal surface, an incident beam has a footprint area which is elongated both vertically and horizontally when compared to that of the conventional monochromator, reducing the heat flux of the incident beam and enabling more efficient surface cooling. Because after inclination of the crystal only a fraction of thermal distortion lies in the diffraction plane, slope errors and the resultant misorientation of the diffracted beam are reduced.
    Type: Grant
    Filed: July 6, 1992
    Date of Patent: February 15, 1994
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Ali M. Khounsary
  • Patent number: 5268953
    Abstract: An X-ray analysis apparatus includes angle encoders for the determination of angular positions of at least two rotary shafts, for example the .theta. shaft for a specimen holder, the 2.theta. shaft of an X-ray detector arm or the rotary shaft of an X-ray source. Because the angles are directly or indirectly measured relative to a fixed point, preferably coupled to a goniometer frame of the apparatus, accurate angle detection is ensured. The encoders can also be used as adjusting mechanisms for exact, flexible angular adjustment.
    Type: Grant
    Filed: August 12, 1992
    Date of Patent: December 7, 1993
    Assignee: U.S. Philips Corporation
    Inventor: Stefan L. A. Van Vlijmen
  • Patent number: 5235523
    Abstract: A converse transformation matrix generation approach is used either i) to late a lattice structure of one crystalline material to the lattice structure(s) of one or more other crystalline materials for determining interlattice relationships which allow materials to be identified and classified relative to other materials; or ii) to relate a lattice structure of a material to itself for determining lattice symmetry. In particular, matrices which transform any primitive cell defining a lattice structure either into itself or into another cell defining a second lattice structure to within predetermined maximum tolerances of the cell parameters are generated.
    Type: Grant
    Filed: July 22, 1992
    Date of Patent: August 10, 1993
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventors: Vicky L. Karen, Alan D. Mighell
  • Patent number: 5195115
    Abstract: The invention relates to an X-ray diffractometer device, comprising an X-ray source, a collimator device for the source, a sample support, a collimator device for the beam reflected by the sample and a counter producing an output signal in the form of a voltage which is proportional to the number of photons reflected by the sample. This device furthermore includes a motor drive for the sample support, recording means for the signal Y originating from the proportional counter as a function of the angle .theta. between the plane of incidence of the sample and the incident beam, denoted X, mechanical means having a support for a plurality of filters having different coefficients of absorption and including a motor drive for this filter support, data processing means for selecting one of the filters of the filter support and for controlling the motor drive of the sample support, the motor drive of the filter support and the recording means, respectively.
    Type: Grant
    Filed: July 22, 1991
    Date of Patent: March 16, 1993
    Assignee: U.S. Philips Corp.
    Inventors: Claude Schiller, Jean-Pierre Weber
  • Patent number: 5193104
    Abstract: An X-ray volume analysis method of crystalline defects of a part (11), comprises the steps of positioning the part in the plane situated at equal distance from the focus of an X-ray source and a focusing plane (14); illuminating the part from a punctual X-ray source (10) by a beam of a large spectral width .DELTA..lambda. and of determined angular opening .DELTA..theta., the opening .DELTA..theta. of the beam being fixed by .DELTA..theta..ltoreq..DELTA..lambda./2d.cos.theta., d being the interreticular distance for the considered reticular planes; orienting the part (11) to obtain the diffraction on a chosen family of reticular planes (30); and collecting and analyzing the X-ray beam near the focusing plane or beyond.
    Type: Grant
    Filed: October 22, 1991
    Date of Patent: March 9, 1993
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Pierre Bastie, Bernard Hamelin
  • Patent number: 5187729
    Abstract: A method and an apparatus for detecting a crystallographic axis of a single crystal ingot based on the X-ray diffractometry, wherein and whereby a crystal habit line of the single crystal ingot is optically detected first, and thereafter making use of the geographical relation of the crystallographic axis to the crystal habit line, the crystallographic axis is detected with improved economy of time and labor and with improved precision, so that the orientation flat (OF) is made in the right place and direction.
    Type: Grant
    Filed: February 19, 1992
    Date of Patent: February 16, 1993
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Hiroyaki Ibe, Seiichi Terashima, Tsumoru Masui
  • Patent number: 5157702
    Abstract: A double-crystal X-ray monochromator includes entrance and exit crystal assemblies mounted on a support structure to provide full parallelism of the crystals while one crystal is rotated and the other rotated and translated with respect to the first, allowing selection of the wavelength of X-rays to be passed through the monochromator. The monochromator is mounted in an ultra-high vacuum chamber by supports which pass through the vacuum chamber to support the monochromator independently of the vacuum chamber. Bearings supporting the monochromator provide very low friction to linear movement and rotation to allow high precision to be obtained. To compensate for the heating of the entrance crystal due to impingement of high energy X-rays on the crystal, the entrance crystal is cooled using a radiation heat transfer system which provides no physical contact between the radiator connected to the entrance crystal assembly and the heat transfer structure on the vacuum chamber.
    Type: Grant
    Filed: December 14, 1990
    Date of Patent: October 20, 1992
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Frederic H. Middleton, John W. Hicks
  • Patent number: 5136624
    Abstract: In the manufacture and processing of monocrystalline material, it is important to be able to detect and measure deviations from the ideal crystal structure. Data are required on the density and average extent of impurity precipitations. The irradiation of discrete crystal areas with wave or particle beams, the determination of the intensity distribution of the beams scattered under Bragg conditions, and the determination of static Debye-Waller factors are to be performed automatically and universally, on different specimen thicknesses, with high resolution and flexibility regarding changes in wavelength. For this purpose, a variation of the angle of incidence of the beams on the diffracting lattice planes is performed, and the reflection factor is measured by means of a photon or particle detector, and the integral reflection factor Rint is determined. Pivoting the specimen around an axis which is perpendicular to the diffracting lattice planes leads to a variation of the specimen thickness.
    Type: Grant
    Filed: July 23, 1991
    Date of Patent: August 4, 1992
    Assignee: Deutsches Elektronen Synchrotron DESY
    Inventors: Jochen Schneider, Hans A. Graf
  • Patent number: 5127039
    Abstract: A sample holder for use with X-ray diffractometers with the capability to rotate the sample, as well as to adjust the position of the sample in the x, y, and z directions. Adjustment in the x direction is accomplished through loosening set screws, moving a platform, and retightening the set screws. Motion translators are used for adjustment in the y and z directions. An electric motor rotates the sample, and receives power from the diffractometer.
    Type: Grant
    Filed: January 16, 1991
    Date of Patent: June 30, 1992
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Victor L. Hesch
  • Patent number: 5077767
    Abstract: A method and apparatus for determining the existence of misorientation in a crystal, comprising irradiating the crystal with X-rays pre-orientating any crystallographic plane of the crystal with respect to the axis of the X-rays, imaging X-rays received from the crystal so as to cause a plurality of effectively angularly-separated images to be formed, the energy of the X-rays being such that while carrying out the method at least some of the X-rays forming the images have intersected the whole depth of the portion of the crystal being examined, and determining the existence of any misorientation from the images.
    Type: Grant
    Filed: February 14, 1991
    Date of Patent: December 31, 1991
    Assignee: Gersan Establishment
    Inventor: Michael P. Gaukroger
  • Patent number: 5046077
    Abstract: The invention discloses a method and an apparatus for measuring lattice spacings in particular of a single crystal during the growth thereof by vapor deposition while located in a heating furnace.
    Type: Grant
    Filed: June 15, 1990
    Date of Patent: September 3, 1991
    Assignee: U.S. Philips Corporation
    Inventor: Hiromu Murayama
  • Patent number: 5016266
    Abstract: An object (12) is irradiated by means of a divergent and polychromatic beam of X-rays for producing a diagram composed of Kikuchi pseudo-lines. An X-ray generator (4) is mounted on a stand (1), and an automatic handler (13) presents the objects (12) in confronting relation to the microfocus (F) of the generator. An intensity amplifier (6) and a video camera (7) record the obtained diagrams composed of the pseudo-lines. The handler apparatus is controlled by an electronic device (17).
    Type: Grant
    Filed: February 21, 1990
    Date of Patent: May 14, 1991
    Assignee: Turbomeca
    Inventor: Michel Meurtin
  • Patent number: 5008909
    Abstract: Diffractometer data is collected without the use of a movable receiving s. A scanning device, positioned in the diffractometer between a sample and detector, varies the amount of the beam diffracted from the sample that is received by the detector in such a manner that the beam is detected in an integrated form. In one embodiment, a variable diameter beam stop is used which comprises a drop of mercury captured between a pair of spaced sheets and disposed in the path of the diffracted beam. By varying the spacing between the sheets, the diameter of the mercury drop is varied. In another embodiment, an adjustable iris diaphragm is positioned in the path of the diffracted beam and the iris opening is adjusted to control the amount of the beam reaching the detector.
    Type: Grant
    Filed: February 7, 1990
    Date of Patent: April 16, 1991
    Assignee: The United States of America as represented by the Department of Energy
    Inventor: Peter A. Steinmeyer
  • Patent number: 5007071
    Abstract: A method of inspecting bonded wafers, which involves obtaining a Lang topograph of bonded wafers as a sample by using a Lang camera, or further treating an image thereon, thereby detecting unbonded regions at the interface of the bonded wafers. In bonding two silicon wafers to each other, an one-side surface of each silicon wafer is finished into a mirror surface and then is cleaned to a sufficient extent. Subsequently, both the mirror surfaces of the two silicon wafers are superposed one upon the other and then the superposed wafers are subjected to high-temperature heat treatment. The high-temperature heat treatment is conducted mainly for the purpose of removing distortions on the bonded surfaces, making the bonding interface monolithic, and, absorbing and diffusing a very small amount of atmospheric gas.
    Type: Grant
    Filed: October 16, 1989
    Date of Patent: April 9, 1991
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Masami Nakano, Takao Abe
  • Patent number: 4995063
    Abstract: A single crystal orientation identifying and determining apparatus for semiconductor wafers capable of conducting the facial discrimination of a semiconductor wafer and the determination of the crystal orientation thereof, which comprises a first wafer store; an alignment device for aligning the wafer in a predetermined orientation; an X-ray inspection device for inspecting the wafer as to whether or not the inspected face of the wafer is a predetermined particular face, and whether or not the orientation of the principal plane of the wafer is within a predetermined range, said X-ray detector, and X-ray detector, and an X-ray inspection stage; a second wafer store; a first conveyor for conveying the wafer from the first wafer store to the alignment device; a second conveyor for conveying the wafer form the alignment device to the X-ray inspection device, and a third conveyor for conveying the wafer from the X-ray inspection device to an arbitrary address in the second wafer store determined based on the resul
    Type: Grant
    Filed: January 17, 1990
    Date of Patent: February 19, 1991
    Assignee: Shin-Etsu Handotai Company, Ltd.
    Inventors: Shigeo Enoki, Kenichi Okamura
  • Patent number: 4961210
    Abstract: A method of measuring the lattice parameter in an unknown single crystal by omparing its diffraction angle to a standard single crystal, on a double-crystal diffractometer is disclosed.
    Type: Grant
    Filed: February 28, 1990
    Date of Patent: October 2, 1990
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventor: Mohammad Fatemi
  • Patent number: 4862488
    Abstract: Device for measuring the orientation of bulk monocrystalline materials with respect to the crystallographic parameters using the Laue method, consisting, on the one hand, of a Laue chamber including a polychromatic x-ray source, a photographic film support and a collimator placed in the path of the x-rays between the source and the film in the vicinity of the latter defining the optical axis of the Laue chamber, and consisting, on the other hand, of means of support for a bulk specimen, of means of alignment for the chamber and the means of support, and means of determining the orientation of the specimen with respect to the crystallographic axes, characterized in that the means of support comprise at least one specimen-carrier which has a first planar face to receive the specimen, a second planar space perpendicular to the first for immobilizing the specimen, a first reference plane parallel to the first planar face, a second reference face parallel to the second planar face and a third reference plane perpe
    Type: Grant
    Filed: February 20, 1987
    Date of Patent: August 29, 1989
    Assignee: U.S. Philips Corporation
    Inventor: Claude Schiller
  • Patent number: 4821302
    Abstract: A method and apparatus is disclosed for measuring the lattice parameters of single crystal material while that material is undergoing a transient shock wave. In a first embodiment, a first target is located at a preselected position in space with respect to a single crystal to be measured. A first laser beam pulse is transmitted through a beam block to the crystal to produce a transient shock wave in part of the crystal. A second laser beam pulse, synchronized to the first laser beam pulse, is transmitted to the first target to cause the first target to produce first and second sets of x-rays which are Bragg-diffracted from shocked and unshocked atomic planes of the crystal as the crystal is undergoing the shock wave. A first x-ray detector records the positions of the first and second sets of Bragg-diffracted x-rays to provide a first measurement of the lattice parameters of the crystal.
    Type: Grant
    Filed: February 29, 1988
    Date of Patent: April 11, 1989
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Robert R. Whitlock, Justin S. Wark, Allan Hauer
  • Patent number: 4788702
    Abstract: The invention comprises apparatus for determining the orientation of the crystallographic axes of a single crystal. The crystal is rotated on a turntable while an X-ray beam containing characteristic radiation is directed onto it. A stationary position-sensitive detector, preferably positioned at right angles to the beam detects Bragg reflections from the crystal, and computing means responsive to the signals from the detector, and signals representing the angular position of the turntable determines the crystal orientation.
    Type: Grant
    Filed: August 8, 1986
    Date of Patent: November 29, 1988
    Inventors: Stephen Howe, Donald Rogers
  • Patent number: 4771446
    Abstract: The invention comprises a method of, and apparatus for, measuring the orientation error in a single crystal. An X-ray beam is reflected from the surface of the crystal while it is rotated, and the orientation error is determined from the figure traced at a detector by the reflected beam. The orientation error may be calculated from the major axes of the traced figure, or, if the X-ray beam contains a characteristic line, from the separation of the two bright spots produced in the traced figure.
    Type: Grant
    Filed: August 8, 1986
    Date of Patent: September 13, 1988
    Inventors: Stephen Howe, Donald Rogers
  • Patent number: 4726047
    Abstract: In an X-ray analysis apparatus, a specimen to be examined is mounted on the circumference of a focusing cylinder, which can be rolled along an auxiliary cylinder arranged concentrically around the beam focus of an X-ray beam. Independently of the movement mechanism used, a fixed part of the specimen then remains continuously in the beam path. Invariably the same surface area of the specimen is irradiated by the X-ray beam. The movement mechanism may have added to it a device by means of which during the movement of the specimen and the detector the detector is continuously optimally directed to the specimen. The specimen holder may have added to it a device for rotating and/or tilting a specimen included therein.
    Type: Grant
    Filed: January 23, 1984
    Date of Patent: February 16, 1988
    Assignee: U.S. Philips Corporation
    Inventors: Geert Brouwer, Sipke Wadman
  • Patent number: 4715053
    Abstract: The crystallographic texture of metallic tubular articles is characterized by an X-ray diffraction technique where X-rays are directed onto the surface of the tubular article and diffracted X-rays detected by use of a position-sensitive detector. By effecting relative movement of the tubular article and the X-ray source in both a rotational direction about the axis of the tube and in an axial direction, and measuring intensities from multiple Bragg peaks of the diffracted X-rays from a plurality of locations on the tube, the crystallographic texture of the tube is characterized.
    Type: Grant
    Filed: January 25, 1985
    Date of Patent: December 22, 1987
    Assignee: Westinghouse Electric Corp.
    Inventors: Robert J. Comstock, George P. Sabol
  • Patent number: 4710259
    Abstract: A method of and apparatus for setting the orientation of a single crystal which may be a seed crystal, boule, wafer or a growing boule. The crystal is irradiated with a beam of X-rays having a peak of energy at a given wavelength and the orientation of the crystal is adjusted while moving the crystal and the beam about an axis perpendicular to the equatorial plane containing the X-ray beam until a pair of reflexions that are symmetrical with respect to the equatorial plane occur simultaneously at the said wavelength of radiation. When the X-ray beam has a peak of energy at the said wavelength against a back ground of white radiation, symmetrical reflexions can be detected and will flash simultaneously only when one of the crystallographic planes of symmetry is set in a predetermined or determinable orientation relative to a given datum.
    Type: Grant
    Filed: May 14, 1985
    Date of Patent: December 1, 1987
    Inventors: Stephen H. Howe, Donald Rogers
  • Patent number: 4709384
    Abstract: A Laue camera is provided by incorporating an X-ray source represented by its focus and defined by its two focal dimensions and its exposure angle, a photographic film holder, a collimator taking the form of two diaphragms and placed on the path of the rays between the source and the film, but close to the latter. The X-ray source is used at an exposure angle such that its apparent focal dimensions are of the same size, that the diameter of the openings in the diaphragms is virtually of the same size as the two apparent focal dimensions of the source, that this size is smaller than the average radius desired for a spot in the diffraction diagram obtained from a sample obtained with the aid of this device with the sample being placed close to the surface of the film opposite to the source.
    Type: Grant
    Filed: February 4, 1986
    Date of Patent: November 24, 1987
    Assignee: U.S. Philips Corporation
    Inventor: Claude Schiller
  • Patent number: 4696024
    Abstract: A gamma diffractometer is used for examining or testing samples from the materials flaw aspect. More particularly, single crystal blades of turbo engines are inspected by Roentgen radiation and evaluation of reflections with regard to their half peak width and spacings in the profile or curve representing irradiation intensity (I) as a function of a rotational angle (.alpha.) of a test sample, said spacings representing lattice planes of a plurality of single crystal grains. The half peak widths and the spacings provide an information regarding the presence or absence of material flaws.
    Type: Grant
    Filed: October 3, 1985
    Date of Patent: September 22, 1987
    Assignee: MTU Motoren- und Turbinen-Union Muenchen GmbH
    Inventor: Wilfried Pesch
  • Patent number: 4649556
    Abstract: A method and apparatus for the "on-line", nondestructive measurement and control of grain size in various materials, such as steel, powders, ceramics, semiconductors, and crystalline polymers. A substantially monochromatic beam of X-rays is directed at the material as it moves relative to a predetermined measuring station. The incident X-ray beam has a predetermined cross-sectional area so that over a plurality of time intervals a plurality of corresponding non-overlapping area segments are irradiated. The time-integrated intensity of diffracted radiation from each non-overlapping area segment is measured and the relative variance of the intensity measurements within the total area irradiated is determined. The relative variance of the measured intensities is then used to determine the grain size of the products which is generally reported as the mean grain diameter, weighted with respect to volume.
    Type: Grant
    Filed: February 27, 1984
    Date of Patent: March 10, 1987
    Assignee: Northwestern University
    Inventors: Christine Rinik, Jerome B. Cohen, John E. Hilliard
  • Patent number: 4641329
    Abstract: A fixture is provided for supporting and aligning small samples of material on a goniometer for X-ray diffraction analysis. A sample-containing capillary is accurately positioned for rotation in the X-ray beam by selectively adjusting the fixture to position the capillary relative to the x and y axes thereof to prevent wobble and position the sample along the z axis or the axis of rotation. By employing the subject fixture relatively small samples of materials can be analyzed in an X-ray diffraction apparatus previously limited to the analysis of much larger samples.
    Type: Grant
    Filed: April 23, 1985
    Date of Patent: February 3, 1987
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Lanny A. Green, Joaquim L. Heck, Jr.
  • Patent number: 4634599
    Abstract: A method is provided for making ordered monolayers of macromolecules. A supported lipid polylayer is contacted with macromolecules in an aqueous polar solution and allowed to incubate.
    Type: Grant
    Filed: May 2, 1985
    Date of Patent: January 6, 1987
    Assignee: General Electric Company
    Inventor: Egidijus E. Uzgiris
  • Patent number: 4634490
    Abstract: Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.
    Type: Grant
    Filed: December 10, 1984
    Date of Patent: January 6, 1987
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Masami Tatsumi, Shin-ichi Sawada, Ryusuke Nakai
  • Patent number: 4489133
    Abstract: Methods and compositions involving two-dimensional ordering of organic polar solvent soluble organic macromolecules. Lipid monolayer forming molecules are bound covalently or non-covalently to organic macromolecules soluble in polar solvents, whereby the macromolecules are allowed to become oriented in two-dimensions to form an ordered, low free energy, including crystalline, layer of macromolecules. The macromolecules may then be further combined with other moieties to create additional layers, to be cross-linked or otherwise modified, and/or separated from the lipid monolayer. The resulting ordered layers can be used for a variety of purposes, in crystallographic techniques for structure determination and structural relationship determinations, in optics, as polymers, films, and the like.
    Type: Grant
    Filed: November 16, 1982
    Date of Patent: December 18, 1984
    Assignee: The Board of Trustees of the Leland Stanford Jr. University
    Inventor: Roger D. Kornberg