Abstract: Embodiments of the invention are directed to methods and apparatus for rapid thermal processing of a substrate over an extended temperature range, including low temperatures. Systems and methods for using an extended temperature pyrometry system employing a transmitted radiation detector system are disclosed. Systems combining transmitted radiation detector systems and emitted radiation detector systems are also described.

Abstract: The back surface of a substrate having a front surface coated with a resist film is irradiated with flashes of light emitted from flash lamps. Heat conduction from the back surface of the substrate abruptly raised in temperature by the irradiation with flashes of light toward the front surface thereof occurs to heat the resist film formed on the front surface of the substrate, so that a post-applied bake process is performed. After the completion of the post-applied bake process, a cooling plate cools down the substrate. Regardless of the type of resist film formed on the front surface of the substrate, the substrate has a constant absorptance of flashes of light to allow the resist film to be heated to a constant treatment temperature, because the back surface of the substrate is irradiated with flashes of light.

Abstract: Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: Annular reflecting rings are removably mounted on the upper and lower sides of a chamber side portion of a chamber. An annular recessed portion is formed sandwiched between the lower end face of the upper reflecting ring and the upper end face of the lower reflecting ring to surround a holding part for holding a semiconductor wafer. The outer peripheral surface of the recessed portion communicates with a transport opening. The formation of the recessed portion prevents the light emitted from halogen lamps and flash lamps from being non-uniformly reflected around the holding part to enter a semiconductor wafer, thus improving the uniformity of the in-plane temperature distribution in the semiconductor wafer during heat treatment.

Abstract: The present invention provides an oven that utilizes light emitting diode (LED) and or laser diode (LD) as heating devices. Such heating devices will enable a wide variety of heating modalities.

Abstract: A continuous process for making a wheat tortilla or other similar products using a continuous pressing step that occurs during a continuous oven initial cooking step or immediately thereafter. Applicants' invention produces a final product with characteristics of a traditionally cooked flour tortilla using equipment that provides for significant increases in manufacturing throughput. The combination of the continuous oven with the concurrent, or relatively concurrent, pressing step substitutes for the hot pressing plates used in previous methods.

Abstract: The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber (1), a halogen lamp (2) which emits heating light, a quartz window (3) for allowing the heating light to enter the vacuum chamber (1), a substrate supporting base (9) having a cooling function, and a lift pin (13) which causes the substrate (5) to stand still at a heating position P3 and a cooling position P1 and moves the substrate (5) between the heating position P3 and the cooling position P1.

Abstract: A radiant heater includes a heater body having a box-like configuration, the body defining an inner cavity and including a base wall and an open end opposite the base wall. The body is fabricated from a ceramic material. The body also includes a heating element extending a length of the body and positioned to direct energy through the open end of the body.

Abstract: An emitter tube has an outer surface and an inner surface, wherein the inner surface defines a cavity of the emitter tube, and the cavity of the emitter tube is adapted for receiving food. An outer tube has an inner surface that defines a cavity of the outer tube, and the emitter tube is positioned in the cavity of the outer tube. A heating unit is for heating the outer surface of the emitter tube so that heat energy is transferred by conduction from the outer surface of the emitter tube to the inner surface of the emitter tube, and the inner surface of the emitter tube emits infrared radiant energy into the cavity of the emitter tube so that a majority of the energy that is transferred to the food within the emitter tube is in the form of infrared radiant energy.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A disclosed heating apparatus includes a heating chamber configured to heat a substrate placed in the heating chamber with a heat plate opposing the substrate; a gas stream forming portion that creates a gas stream along a top surface of the substrate in the heating chamber; and a pair of first plate members respectively located between an inner side wall of the heating chamber and a first substrate edge opposing the inner side wall, and between another inner side wall of the heating chamber and a second substrate edge opposing the other inner side wall.

Abstract: An oven is configured with a cooking cavity for receiving a cooking load, a circuit for current supplied by one or more stored energy devices such as rechargeable batteries, and a heater comprising one or more radiant lamps to be driven by the current, the one or more radiant lamps being sized and positioned for heating the cooking load. The lamps are driven by current discharged from the batteries to radiantly heat a cooking load. An application of this stove configuration is in a toaster which is capable of toasting slices of bread in a matter of seconds.

Abstract: The present invention relates particularly to an oven (1) for food use, for cooking a cereal-based dough, particularly a fermented dough, which includes a thermally insulated chamber (10) in which the base comprises of a bottom (2) made from a refractory material, said oven also containing a means (3) for heating the bottom (2) and said chamber (10). Said oven is essentially characterised in that said heating means comprises a means emitting energy in the form of electromagnetic radiation in the infrared band, arranged in the top portion of the chamber (10) and facing the bottom (2), and in that said oven is devoid of any other means for heating said bottom.

Abstract: A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

Abstract: A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.

Abstract: A heating process apparatus includes a process chamber, a heat-processed object support member provided in the process chamber for heating a substrate disposed thereon, a cap for covering the substrate disposed on the heat-processed object support member, a heater for heating the heat-processed object support member, a temperature measuring unit for measuring the temperature of the heat-processed object support member, and a controller for controlling the heater. A first measuring unit measures a temperature of the cap, and the controller controls the heater so as to set the cap temperature to a predetermined temperature. A second measuring unit measures a temperature of the heat-processed object support member, and the controller turns off the heater when the temperature of the heat-processed object support member exceeds an over-heat critical temperature.

Abstract: Embodiments of the invention generally contemplate an apparatus and method for monitoring and controlling the temperature of a substrate during processing. One embodiment of the apparatus and method takes advantage of an infrared camera to obtain the temperature profile of multiple regions or the entire surface of the substrate and a system controller to calculate and coordinate in real time an optimized strategy for reducing any possible temperature non-uniformity found on the substrate during processing.

Abstract: A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength.

Abstract: Radiant energy from a semiconductor wafer which is determined from the theoretical value of black body radiation and the actually measured result of an output from a photodiode are brought into correspondence with each other, and a table showing a correlation therebetween is acquired and stored on a magnetic disk. When a semiconductor wafer to be treated is irradiated with flashes of light from flash lamps, the photodiode receives radiant light emitted from the semiconductor wafer. A controller determines, from the output from the photodiode, the radiant energy emitted per unit time from the semiconductor wafer irradiated with flashes of light, based on the acquired table. The controller further determines the surface temperature of the semiconductor wafer from the determined radiant energy.

Abstract: A photodiode excellent in responsivity receives flashes of light emitted from flash lamps in the process of heating a semiconductor wafer by irradiation with flashes of light, and the waveform of the intensity of the flashes of light versus time is acquired using voltage data obtained from an output from the photodiode. Then, a temperature calculating part performs a heat conduction simulation using the acquired data to calculate the temperature of the semiconductor wafer irradiated with the flashes of light from the flash lamps. The temperature of the semiconductor wafer is computed using data corresponding to the intensity of the flashes of light obtained from the output from the photodiode. This allows the determination of the surface temperature of the semiconductor wafer irradiated with the flashes of light, irrespective of the waveform of the emission intensity of the flash lamps.

Abstract: The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a ceramic reflector plate, which may be optically transparent. The reflector plate may include a reflective coating and be part of a reflector plate assembly in which the reflector plate is assembled to a baseplate.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

Abstract: A methodology and product or system configurations are provided which allow food to be directly irradiated for cooking applications which involve the impingement of direct radiant energy on food or comestible items. Cooking vessels or cook-packs are used that are optically transmissive in visible or infrared narrow wavelength bands emitted in suitable narrowband cooking or heating systems.

Abstract: A system and method for utilizing corner-cube reflector technology for irradiation control in direct radiant heating systems is described. The system and method has application in many types of direct irradiation heating systems and is applicable to both narrowband or broadband directed irradiation heating systems. The purpose and result of the implementation is to improve the overall system efficiency through the redirection of photons back to a targeted item which is being heated or treated with the irradiation energy.

Abstract: Disclosed are a liquid heating unit capable of monitoring the temperature of the liquid storage tank or pipe in which liquid is heated by permeation of the radiated light, a liquid processing apparatus including the same, and a liquid processing method. The liquid heating unit includes: a lamp heater radiating light; a cylindrical member having a cylindrical shape made of material permeating the radiated light configured to insert and penetrate the lamp heater into an internal space; a liquid conduction part placed along an outer periphery of the cylindrical member and configured to heat liquid flowing therein by using the radiated light; a reflection plate covering the liquid conduction part from the outside and reflecting the radiated light; and a first temperature sensor attached to an outer surface of the reflection plate.

Abstract: One embodiment relates to an apparatus for vacuum-compatible substrate thermal management. The apparatus includes a load-lock chamber coupled to a vacuum chamber, a light-emitting diode array, and a substrate stage. The load-lock chamber is configured to hold a substrate prior to the substrate being transferred into the vacuum chamber, and a substrate stage is configured to hold the substrate in the vacuum chamber. The light-emitting diode array is configured to warm the substrate while the substrate is in the load-lock chamber. Other features, aspects and embodiments are also disclosed.

Abstract: An oven is configured with a cooking cavity for receiving a cooking load, a circuit for current supplied by one or more stored energy devices such as rechargeable batteries, and a heater comprising one or more radiant lamps to be driven by the current, the one or more radiant lamps being sized and positioned for heating the cooking load. The lamps are driven by current discharged from the batteries to radiantly heat a cooking load. An application of this stove configuration is in a toaster which is capable of toasting slices of bread in a matter of seconds.

Abstract: A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Abstract: In a plate for adjusting a temperature of a substrate, a body of the plate supports the substrate. A first channel and a second channel are disposed within the body of the plate. The first channel has a first inlet and a first outlet and passes therethrough a first fluid to adjust the temperature of the substrate. The second channel has a second inlet adjacent to the first outlet and a second outlet adjacent to the first inlet and passes therethrough a second fluid to adjust the temperature of the substrate. Further, the first and second channels are disposed side by side. Thus, the temperature of the substrate may be adjusted uniformly as a whole.

Abstract: Disclosed is a heat treatment unit 4 serving as a heat treatment apparatus, which includes a chamber 42 for containing a wafer W on which a low dielectric constant interlayer insulating film is formed, a formic acid supply device 44 for supplying gaseous formic acid into the chamber 42, and a heater 43 for heating the wafer W in the chamber 42 which is supplied with formic acid by the formic acid supply device 44.

Abstract: Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.

Abstract: To provide a photo-irradiation type heat treatment apparatus that eliminates the adverse influence of a light transmitting window on the temperature distribution of an article to be treated without losing the original function of a reflecting mirror a photo-irradiation type heat treatment apparatus in which heat treating of an article is performed by irradiating the article with light emitted from multiple filament lamps through a light transmitting window, by providing the apparatus with a reflecting mirror having an opening at its central area so that cooling air can pass therethrough and by providing an air permeable reflector so as to cover the opening in the reflecting mirror.

Abstract: An article supports a workpiece during thermal processing. At least three elongated support members, e.g., support pins, extend upwardly from an element such as support arms for supporting the workpiece. Each of the support members includes a first portion adjacent to the workpiece. A second portion extends downwardly from the first portion. The first portion can have a thermal response faster than the thermal response of the workpiece and the second portion can have a slower thermal response. A removable element may be mounted to the support member for adjusting the thermal response of the support member. With removable elements, the support members can be adjusted to cause no net transfer of heat to or from the workpiece.

Abstract: A technology to control temperature of a large substrate to be heated. A temperature sensing device is disposed lateral to a region where a radiation heater faces a substrate to be heated inside a heating chamber. A heating device has the heating chamber, the radiation heater, a power-supply device, a substrate-holding device, a control device, and the temperature sensing device. A control program is built into the control device, according to which the power-supply device controls the power applied to the radiation heater to generate heat such that the temperature of the temperature measurement substrate detected by a thermocouple of the temperature sensing device becomes a set temperature. Furthermore, a circulation passage is disposed in close contact with the temperature-sensing device, and with a coolant flowing through the circulation passage, the temperature of the temperature measurement substrate can be cooled from the set temperature to an initial temperature.

Abstract: An RTP heating system and an RTP heating method, which can heat a photovoltaic-device intermediate product having a glass substrate, a Mo layer, and a light absorption layer in formation. The RTP heating system is composed of a chamber; a support member located in the chamber; a heating element mounted in the chamber for emitting infrared rays for heating; and a plurality of temperature sensors and a temperature control device for sensing and controlling thermal sources from the heating element and the support member. The infrared rays can be mostly reflected off the Mo layer to apply less direct heating to the glass substrate. Accordingly, the upper and lower surfaces of the photovoltaic-device intermediate product can be heated under different temperatures separately to prevent the glass substrate below the photovoltaic-device intermediate product from softening and deformation and to allow production of the light absorption layer on the Mo layer.

Abstract: An apparatus for heat treating a substrate includes a substrate holder unit including a substrate stage on which a substrate is to be placed and which is made of one of a carbon and a carbon covered material, and a heating unit which is provided above the substrate stage and includes a heat dissipation surface opposing the substrate stage, and heats the substrate placed on the substrate stage in noncontact therewith radiation heat from the heat dissipation surface. In addition, a chamber contains the substrate holder unit and the heating unit, and an elevating device vertically moves at least one of the substrate holder unit and the heating unit in the chamber to bring the substrate stage and the heat dissipation surface of the heating unit close to each other or apart from each other. The substrate holder unit includes a radiation plate which is arranged under the substrate stage at a gap therefrom, and a reflection plate which is arranged under the radiation plate at a gap therefrom.

Abstract: A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material.

Abstract: An oven is described that can more evenly heat the semiconductor wafer, even though the wafer may warp during heating. The oven may provide relatively uniform heating even though the type and location of warping may be unpredictable for any given wafer. The oven may have a heating surface divided into a plurality of heating zones that may each independently provide a given amount of heat to the wafer. The amount of heat provided by each zone may be determined using signals from sensors that sense the warping of the wafer.

Abstract: A radiant heating for heating the building material in a laser sintering device and a laser sintering device having such a radiant heating are described. The radiant heating has a sheet-like heat radiating element (113, 213, 313), which is characterized in that it is made of a material, that has a low thermal inertia with a thermal diffusivity of preferably more than 1.5·10?4 m2/s and preferably has a thickness of 2 mm or less.

Abstract: A food holding cabinet having one or more food-holding compartments has two or more zones in a compartment, wherein holding temperatures can be different from each other. A shelf made of glass-ceramic passes infrared energy from two or more heating elements attached to the glass-ceramic shelf. Energy emitted from the different heating elements effectuate different temperatures of localized regions of the glass-ceramic and impart different amounts of heat energy into a food item or food holding trays above the heating elements.

Abstract: A warmer for scented oil is provided. The warmer includes a base, a cover removably positioned on the base, and a warming device. The cover has a substantially spherical shape with an opening at an upper apex and an open channel formed in the cover at the upper apex around an outer periphery of the opening. The open channel is configured to receive the scented oil. The warming device is in a heat conductive relationship with the cover so that scented oil in the open channel is warmed by the warming device. The warming device can be one or more of a lighting device with an incandescent light bulb, a resistance heater with or without a lighting device such as a light emitting diode, or a candle.

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.

Abstract: Disclosed is a method and apparatus for concentrated thermal radiation heat transfer from an electrically produced source of light. Whereby, the electromagnetic energy is conveyed from the source through lens assemblies for collection and distribution. The concentrated thermal radiation can be utilized locally or remotely through optical fiber systems. It can be collected on metal or other collecting surfaces and can heat various mediums. The heated medium can then be transferred by way of ventilation, pumps. or natural dispersion. The concentrated heat can be utilized without the use of a collection surface directly into its surroundings. In this embodiment the light from the source can also be put to use without the need for optical fiber systems or other devices. The array of lens assembles and optical fiber systems can be molded together out of plastic, glass, or other materials to minimize the cost of manufacturing.

Abstract: An object is to provide a method of activating impurity elements added to a semiconductor film, and a method of gettering, in a process of manufacturing a semiconductor device using a substrate having a low resistance to heat, such as glass, without changing the shape of the substrate, by using a short time heat treatment process. Another object is to provide a heat treatment apparatus that makes this type of heat treatment process possible. A unit for supplying a gas from the upstream side of a reaction chamber, a unit for heating the gas in the upstream side of the reaction chamber, a unit for holding a substrate to be processed in the downstream side of the reaction chamber, and a unit for circulating the gas from the downstream side of the reaction chamber to the upstream side are prepared. The amount of electric power used in heating the gas can be economized by circulating the gas used to heat the substrate to be processed.

Abstract: A multi-function roaster system includes a roasting oven serving as a main body formed by two oven sidewalls to which a liftable cover is rotatably mounted. A open top grating roasting assembly is arranged at a bottom of the roasting oven. At a suitable location adjacent to an inner top of the liftable cover, an infrared heating roasting assembly is frame-supported on an oven back wall. The top fired infrared heating roasting assembly includes a reflection plate that is inclined downward in a rearward direction and is arranged at a bottom of the infrared heating roasting assembly to guide greasing dropping induced by infrared heating roasting away from an open top roasting site on a lower portion and to reflect infrared radiation to heat a bottom side of a heating grating. As such a single system allows for selection among multiple roasting modes, includes open top grating roasting and top fired infrared heating roasting.

Abstract: A device for assembling orders of food from prepared food items having multiple sides on different sides of the device is disclosed. Also disclosed is a system including the device and a method of assembling orders of food. Each side has a plurality of side receptacles accessible to a worker at the side. Adjacent to the sides is a holding area for holding prepared food items. Preferably the heated holding area has a central portion that is heated.

Abstract: The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased.

Abstract: A heat radiating plate storage tray has a plate main body, and a plurality of first projection portions provided on a first surface of the plate main body. A heat radiating plate having a rectangular recessed portion on a surface thereof is capable of being mounted on the first surface of the plate main body, a top face of the first projection portion supports a bottom face of the recessed portion of the heat radiating plate, and a height of the first projection portion is larger than a depth of the recessed portion of the heat radiating plate.

Abstract: Multi-zone, solar cell diffusion furnaces having a plurality of radiant element (SiC) or/and high intensity IR lamp heated process zones, including baffle, ramp-up, firing, soaking and cooling zone(s). The transport of solar cell wafers, e.g., silicon, selenium, germanium or gallium-based solar cell wafers, through the furnace is implemented by use of an ultra low-mass, wafer transport system comprising laterally spaced shielded metal bands or chains carrying non-rotating alumina tubes suspended on wires between them. The wafers rest on raised circumferential standoffs spaced laterally along the alumina tubes, which reduces contamination. The bands or chains are driven synchronously at ultra-low tension by a pin drive roller or sprocket at either the inlet or outlet end of the furnace, with appropriate tensioning systems disposed in the return path. The high intensity IR flux rapidly photo-radiation conditions the wafers so that diffusion occurs >3× faster than conventional high-mass thermal furnaces.