Bismuth Base Patents (Class 420/577)
  • Patent number: 6367683
    Abstract: The invention, which permits active solder braze technology to be used in a more versatile manner, relates to a solder braze alloy and to a method for joining workpieces by soldering by means of a solder braze alloy. The novel alloy is characterized in that it comprises 1-10% by weight of an element or a mixture of elements of subgroup IVa and/or Va of the Periodic Table of the Elements and 0.1-20 wt% of an element or a mixture of elements of the group of the rare earths and the remainder consists of zinc, lead, tin, bismuth or indium or a mixture predominantly of two or more of the elements zinc, lead, tin, bismuth and indium and optionally of the elements silver, copper, gallium, antimony, nickel, manganese, chromium, cobalt possibly of customary impurities.
    Type: Grant
    Filed: March 9, 2000
    Date of Patent: April 9, 2002
    Assignee: Materials Resources International
    Inventors: Ino J. Rass, Erich Lugscheider, Frank Hillen
  • Patent number: 6319617
    Abstract: A solder composition that bonds well to oxides and other surfaces to which solder bonding is conventionally difficult is provided. The solder is particularly useful for reliable bonding and packaging of optical components that often have oxide surfaces. The solder composition exhibits a microstructure containing a solder matrix in which is distributed fine, micron-scale islands of rare-earth-containing intermetallic particles. The existence of the islands makes the rare earth elements better available for bonding, and reduce the extent to which the rare earths are oxidized. Advantageously, the solder contains Au and/or Ag, in which the rare earth elements tend to have some solid solubility. Due to this solubility, the Au and/or Ag tend to provide some additional protection of the rare earths against oxidation, and thereby also provide accelerated dissolution of the rare earth into the molten solder.
    Type: Grant
    Filed: August 18, 2000
    Date of Patent: November 20, 2001
    Assignee: Agere Systems Gaurdian Corp.
    Inventors: Sungho Jin, Guenther Wilhelm Kammlott, Hareesh Mavoori, Ainissa G Ramirez
  • Patent number: 6306516
    Abstract: The invention provides an article comprising a solder that bonds well to oxides and other surfaces to which solder bonding is problematic. The solder composition contains one or more rare earth elements, which react with the oxide or other surface to promote bonding, and further contains sufficient Au and/or Ag to act as carriers for the rare earths. Because rare earths have some solid solubility in Au and Ag, the problem of intermetallic formation is lessened or eliminated, and improved bonding to oxide surfaces is attained.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: October 23, 2001
    Assignee: Agere Systems Guardian Corp.
    Inventors: Sungho Jin, Hareesh Mavoori, Ainissa G Ramirez
  • Patent number: 6156132
    Abstract: Lead-free alloys of the present invention includes bismuth in the amount of 30 to 58% by weight and one of the following first to fourth compositions in addition to tin as a main component. In the first composition, germanium is present in the amount of 0.1 or less % by weight. In the second composition, silver is present in the amount of 5% by weight or less and antimony is present in the amount of 5% by weight or less in addition to 0.1% by weight or less of germanium of silver. In the third composition, nickel and copper are included, preferably 0.2 or less % by weight or less of nickel and 1% by weight of copper. In the fourth composition, at least one selected from the group of 5 or less % by weight of silver, 5 or less % by weight of antimony, and 0.1 or less % by weight of germanium in addition to 0.2 or less % by weight of nickel and 1 or less % by weight of copper.
    Type: Grant
    Filed: February 4, 1999
    Date of Patent: December 5, 2000
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Mitsuo Yamashita, Shinji Tada, Kunio Shiokawa
  • Patent number: 5833921
    Abstract: Electrical solder compositions (by weight percent) having between 43-58% Sn; 38-52% Bi; and at least one of: 5-15%Sb; 1-4.0% Cu; 2% In; and 1-2% Ag, and having a melting temperature 133.degree.-167.degree. C. The solders are lead-free and have low melting points making them particularly useful for applications wherein components being joined involve thermoplastic substrates.
    Type: Grant
    Filed: September 26, 1997
    Date of Patent: November 10, 1998
    Assignee: Ford Motor Company
    Inventors: Mohan R. Paruchuri, Dongkai Shangguan
  • Patent number: 5755896
    Abstract: Solder compositions (by weight percent) (1) comprising between 37-53% tin, 37-57% bismuth, and 6-10% indium and having a melting temperature between 99.degree.-124.degree. C., and (2) comprising between 48-58% tin, 40-50% bismuth, and 2-5% indium and having a melting temperature between 125-157.
    Type: Grant
    Filed: November 26, 1996
    Date of Patent: May 26, 1998
    Assignee: Ford Motor Company
    Inventors: Mohan R. Paruchuri, Dongkai Shangguan
  • Patent number: 5641454
    Abstract: Disclosed are a composite material having an anti-wear property and a process for producing the same. The composite material includes a matrix of a low melting point Sn alloy having a melting point of from 80.degree. to 280.degree. C., and metallic dispersing particles dispersed in the matrix in an amount of from 10 to 50% by volume. When the composite material is utilized to make a rough mold for preparing a prototype, it sharply improves the anti-wear property of the rough mold, and it can be re-used for a plurality of times without adversely affecting the sharply improved anti-wear property. The composite material provides the advantageous effect best when the metallic dispersing particles are Fe--C alloy dispersing particles and/or Fe--W--C alloy dispersing particles which were subjected to a surface treatment including an Sn or Ni electroplating followed by a ZnCl.sub.2.NH.sub.4 Cl flux depositing.
    Type: Grant
    Filed: June 10, 1994
    Date of Patent: June 24, 1997
    Assignees: Toyota Jidosha Kabushiki Kaisha, Nisshin Steel Co., Ltd.
    Inventors: Satoru Kito, Masahito Ito, Fuminori Matuda, Eiki Takeshima, Yasuji Tanaka, Takahiro Fujii, Kenjiro Izutani
  • Patent number: 5593082
    Abstract: Methods of solder bonding sputter targets to backing plate members and solder bonded target/backing plate assemblies are available wherein a solder paste is used to bond adjoining target and backing plate surfaces. This paste comprises a low melting point metal component having a melting point of about 70.degree. C. or less and a finely divided solid solution component comprising at least one metal from groups IB, VIII, and IVB of the periodic chart and at least one metal from groups IVA, IIIA and VA of the periodic chart. The solder paste is applied to the surfaces to be soldered and is allowed to solidify. A durable solder bond is formed that is capable of withstanding high temperatures on the order of about 500.degree. C. without failure.
    Type: Grant
    Filed: November 15, 1994
    Date of Patent: January 14, 1997
    Assignee: Tosoh SMD, Inc.
    Inventors: Eugene Y. Ivanov, Tatyana F. Grigoriva, Vladimir V. Boldyrev
  • Patent number: 5569433
    Abstract: We have made the surprising discovery that small amounts of Ag below 1% by weight are effective in making Bi--Sn alloys less strain-rate sensitive without deleteriously affecting the melting character of the alloy. A Pb-free solder composition comprising at least 40% by weight Bi, between 40% and 60% Sn, and between 0.05 and 1% Ag is effective to increase the total elongation of the solder by at least 20% under the same processing conditions. Moreover the solder is free of undesirable Ag-containing phases with a melting point in excess of the 183.degree. C. melting point of the Pb--Sn binary eutectic alloy. In a preferred embodiment, the composition comprises 54.75% Bi, 45% Sn, and 0.25 % Ag.
    Type: Grant
    Filed: November 8, 1994
    Date of Patent: October 29, 1996
    Assignee: Lucent Technologies Inc.
    Inventors: Ho S. Chen, Sungho Jin, Mark T. McCormack
  • Patent number: 5505928
    Abstract: Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.
    Type: Grant
    Filed: April 21, 1994
    Date of Patent: April 9, 1996
    Assignee: The Regents of University of California
    Inventors: A. Paul Alivisatos, Michael A. Olshavsky
  • Patent number: 5503475
    Abstract: In measuring a cooling curve by means of thermal analysis of cast iron, a compressed powder moulding or sintered moulding of tellurium, bismuth, boron, zinc and/or aluminum is fixed to the inner surface of a cooling curve measuring cup, and a melt is poured into said cup when primaly crystalized and eutectic temperatures based on the metastable solidification of iron, cementite and silicon cleary appear. This method allows the carbon equivalent, carbon content and silicon content of the cast iron to be determined and the physical and mechanical properties of the iron to be estimated. Additionally, said compressed metallic powder moulding or sintered moulding is arranged at and fixed to said cooling curve measuring cup used in the method, while enclosing a thermocouple.
    Type: Grant
    Filed: July 5, 1994
    Date of Patent: April 2, 1996
    Assignee: Metec Corporation
    Inventor: Takeshi Yamaguchi
  • Patent number: 5368814
    Abstract: The lead free alloy is a low solidus temperature, multi-component solder alloy containing at least about 50 weight percent Bi, up to about 50 weight percent Sn (basis total Sn and Bi), and an effective amount of a physical and mechanical property enhancing third component. The third component can be Cu, In, Ag, and combinations of Cu and Ag.
    Type: Grant
    Filed: June 16, 1993
    Date of Patent: November 29, 1994
    Assignee: International Business Machines, Inc.
    Inventors: Stephen G. Gonya, James K. Lake, Randy C. Long, Roger N. Wild
  • Patent number: 5248476
    Abstract: An alloy composition comprising effective amounts of bismuth, indium, lead, tin, and gallium, which is especially suited for lens blocking.
    Type: Grant
    Filed: April 30, 1992
    Date of Patent: September 28, 1993
    Assignee: The Indium Corporation of America
    Inventors: James A. Slattery, Charles E. T. White, George E. Kraeger, John R. Sovinsky
  • Patent number: 5192377
    Abstract: In a process of producing strip or wire, which consists of a monotectic aluminum-silicon alloy comprising a matrix consisting of aluminum and an aluminum-silicon eutectic system and as a minority phase 1 to 50% by weight lead or bismuth included in said matrix, which strip or wire has been continuously cast at a high casting velocity and a high cooling rate from a molten material which has been heated to a temperature above the segregation temperature, and which strip or wire has been subjected to plastic deformation and to a heat treatment, the minority phase which is embedded in the form of elongate platelets in the strip or wire is transformed to more compact shapes by a heat treatment at temperatures of 550.degree. to 600.degree. C.
    Type: Grant
    Filed: April 22, 1991
    Date of Patent: March 9, 1993
    Assignee: Metallgesellschaft Aktiengesellschaft
    Inventors: Bruno Prinz, Alberto Romero, Ingrid Muller
  • Patent number: 5126168
    Abstract: Lewis base-borane complexes such as (CH.sub.3).sub.2 S.BHBr.sub.2 are utilized as molecular precursors for the formation of both bulk powders, films and coatings of boron nitride. The complexes are subjected to slow heating under an ammonia atmosphere to displace the base and pyrolyze the resulting complex to BN. Analogous processes may be used to prepare Group IIIA-VA compounds of the formula MM' where M is selected from the group consisting of B, Al, Ga, In, and Tl, and M' is selected from the group consisting of N, P, As, Sb and Bi.
    Type: Grant
    Filed: February 1, 1989
    Date of Patent: June 30, 1992
    Assignee: The Trustees of the University of Pennsylvania
    Inventors: Larry G. Sneddon, Jeffrey Beck
  • Patent number: 5098656
    Abstract: A unique class of bonding alloys and methods for their use are provided which enable the user to electrically join superconductive materials to themselves, to normal conductive materials, or to semi-conductors. The bonding alloys have enhanced wetting properties and a melting point less than 100.degree. C. in all instances. The bonding alloys are unusual and advantageous in that they create an intimate, direct, mechanical and electrical contact between the superconductive material and any other electrical conductor while minimizing mechanical and chemical stresses and avoiding alterations to the superconductive material itself.
    Type: Grant
    Filed: August 1, 1990
    Date of Patent: March 24, 1992
    Assignee: Trustees of Boston University
    Inventors: George O. Zimmerman, Alvaro Kaplan
  • Patent number: 5039576
    Abstract: An electroplating bath, cell and method for the electrodeposition of a wide range of tin-bismuth alloys onto a conductive substrate comprises tin and bismuth ion in aqueous solution, and an alkyl sulfonic or polysulfonic acid or salt as the electrolyte. The sulfonic component is present in amounts sufficient to maintain the bismuth in solution.In the operation of the method of the invention, electroplated tin-bismuth eutectic alloys of controlled composition are obtained. The alloys of tin and bismuth contain amounts of both metals such that the plated alloy has a melting point substantially lower than that of either metal alone, and a melting point lower than that of a tin-lead alloy.
    Type: Grant
    Filed: April 12, 1990
    Date of Patent: August 13, 1991
    Assignee: Atochem North America, Inc.
    Inventor: Harold P. Wilson
  • Patent number: 4975336
    Abstract: this invention relates to an alloy material for data storage of magneto-optical disk (ADSMO), as well as its manufacturing process. ADSMO is based on manganese, bismuth and doped with aluminum atoms and silicon atoms or by aluminum atoms and boron atoms. The above mentioned elements are deposited onto a transparent substrate in a certain sequence using an evaporation process or sputtering process, and then compact hexagonal cyrstalline structures are formed after being annealed in vacuum. ADSMO has a large magneto-optical Kerr rotation, a small size of crystal grains and a stable structure; its manufacturing process is easy and simple.
    Type: Grant
    Filed: April 27, 1989
    Date of Patent: December 4, 1990
    Assignee: Institute of Physics Chinese Academy of Sciences
    Inventors: Yinjun Wang, Jianxiang Shen, Qian Tang, Zhao H. Li
  • Patent number: 4778541
    Abstract: Directional solidification of Bi and Mn compositions to produce magnetic single domain size MnBi particles with aligned morphologies.
    Type: Grant
    Filed: November 20, 1987
    Date of Patent: October 18, 1988
    Assignee: Grumman Aerospace Corporation
    Inventors: Ronald G. Pirich, David J. Larson, Jr.
  • Patent number: 4764212
    Abstract: This invention relates to a method of manufacturing thermoelectric material which has the steps of quenching a thermoelectric alloy in a molten state at a quenching rate higher than 10.sup.3 .degree. C./sec into a membrane or powdery form and subjecting the membrane or powder to cold-forming or sintering. The thermoelectric alloy is a Bi--Sb series alloy having a composition represented by{(Bi.sub.100-x .multidot.Sb.sub.x).sub.100-y .multidot.E.sup.II.sub.y }.sub.100-z .multidot.E.sup.I.sub.zwhere E.sup.I represents a group III or group IV element, E.sup.II represents a group IV or group VI element, x represents a number of 5-20, y represents an integer of 0-20 and z represents a number of 0.05-10, respectively.
    Type: Grant
    Filed: February 19, 1987
    Date of Patent: August 16, 1988
    Assignee: Kabushiki Kaisha Komatsu Seisakusho
    Inventor: Takuji Okumura
  • Patent number: 4491679
    Abstract: The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300.degree. C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced "figure of merit" values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide.Improved conversion devices include powder pressed elements from one or both of these materials.
    Type: Grant
    Filed: July 21, 1983
    Date of Patent: January 1, 1985
    Assignee: Energy Conversion Devices, Inc.
    Inventor: Diane E. Moore
  • Patent number: 4358422
    Abstract: A bismuth-lead alloy containing lesser amounts of tin, antimony and zinc has been developed for use as a fusible metal, and particularly as a jewel metal alloy. The alloy meets the standards set by presently available jewel metals, has a lower melting temperature, better casting properties, and is less expensive than currently used alloys.
    Type: Grant
    Filed: May 1, 1981
    Date of Patent: November 9, 1982
    Assignee: ASARCO Incorporated
    Inventors: Ian M. Shaw, William R. Stack