Halogenated Silane Patents (Class 423/342)
-
Publication number: 20110008235Abstract: In one embodiment, the present invention relates generally to a method for reutilizing ionic halides in a production of an elemental material. In one embodiment, the method includes reacting a mixture of an ionic halide, at least one of: an oxide, suboxide or an oxyhalide of an element to be produced and an aqueous acid solution at moderate temperature to form a complex precursor salt and a salt, forming a precursor halide from the complex precursor salt, reducing the precursor halide into the element to be produced and the ionic halide and returning the ionic halide into the mixture of the reacting step.Type: ApplicationFiled: July 8, 2009Publication date: January 13, 2011Inventors: Angel Sanjurjo, Lorenza Moro, Jordi Perez Mariano, Kai-Hung Lau, Xiaobing Xie, Anoop Nagar, Marc Hornbostel, Gopala N. Krishnan
-
Publication number: 20100296994Abstract: The invention relates to a catalyst, the use thereof, and a method for dismutation of halosilanes containing hydrogen, in particular chlorosilanes containing hydrogen.Type: ApplicationFiled: October 8, 2008Publication date: November 25, 2010Applicant: EVONIK DEGUSSA GMBHInventors: Hartwig Rauleder, Ekkehard Mueh, Reinhold Schork
-
Patent number: 7837852Abstract: The reaction of halo-boron compounds (B—X compounds, compounds having one or more boron-halogen bonds) with silanes provides boranes (B—H compounds, compounds having one or more B—H bonds) and halosilanes. Inorganic hydrides, such as surface-bound silane hydrides (Si—H) react with B—X compounds to form B—H compounds and surface-bound halosilanes. The surface bound halosilanes are converted back to surface-bound silanes electrochemically. Halo-boron compounds react with stannanes (tin compounds having a Sn—H bond) to form boranes and halostannanes (tin compounds having a Sn—X bond). The halostannanes are converted back to stannanes electrochemically or by the thermolysis of Sn-formate compounds. When the halo-boron compound is BCl3, the B—H compound is B2H6, and where the reducing potential is provided electrochemically or by the thermolysis of formate.Type: GrantFiled: July 31, 2009Date of Patent: November 23, 2010Assignee: Los Alamos National Security, LLCInventors: David L. Thorn, William Tumas, Daniel E. Schwarz, Anthony K. Burrell
-
Publication number: 20100290970Abstract: A multi-stage fluidized bed synthesizer and process for synthesizing trichlorosilane wherein silicon particles can be fed into one of multiple intercommunicating fluidizing zones in a fluidized bed reactor supplied with fluidizing gas comprising hydrogen chloride. The fluidizing zones can be disposed laterally adjacent one to another, for example side-by-side, or in a horizontal line. Useful embodiments include: feeding the fluidizing gas at different rates and/or compositions to the different fluidizing zones; filtration apparatus to filter the gaseous product and return silicon particles to the reactor and cooling systems for cooling the fluidized bed and the gas volumes above the fluidized beds, if present.Type: ApplicationFiled: May 11, 2010Publication date: November 18, 2010Inventors: H. Kenneth STAFFIN, Thomas R. Parr
-
Publication number: 20100278706Abstract: The invention relates to a method for reducing the content in elements of the third main group of the periodic system, especially in boron- and/or aluminum-containing compounds of technically pure halosilanes for producing purified halosilanes, especially high-purity chlorosilanes. The invention further relates to an installation for carrying out said method.Type: ApplicationFiled: November 20, 2008Publication date: November 4, 2010Applicant: EVONIK DEGUSSA GmbHInventors: Ekkehard Mueh, Hartwig Rauleder, Reinhold Schork
-
Publication number: 20100266489Abstract: The invention relates to a method for the treatment of a composition containing inorganic silanes and at least one foreign metal and/or a compound containing a foreign metal, wherein the composition is brought in contact with at least one adsorption agent, and for obtaining the composition, in which the content of foreign metal and/or of a compound containing a foreign metal is reduced, and to a corresponding composition having a reduced foreign metal content, and further to the use of organic resins, activated carbons, silicates, and/or zeolites for the reduction of foreign metals and/or compounds containing foreign metals in compositions of inorganic silanes.Type: ApplicationFiled: August 20, 2008Publication date: October 21, 2010Applicant: Evonik Degussa GmbHInventors: Hartwig Rauleder, Ekkehard Mueh, Jaroslaw Monkiewicz, Hans Juergen Hoene, Raymund Sonnenschein
-
Patent number: 7815884Abstract: To provide a method for producing polycrystalline silicon at relatively low cost, wherein the amount of waste generated is reduced by decreasing the amount of waste generated in producing polycrystalline silicon from silicon chloride by a method of reduction and increasing the amount of reused auxiliary raw materials. In the production of polycrystalline silicon using a gas phase reaction of a silicon chloride gas and a reducing agent gas, a chlorine gas is blown into an exhaust gas discharged from a reaction device to initiate a reaction, an unreacted reducing agent and silicon particles contained in the exhaust gas are chlorinated, and then a reducing agent chloride contained in the exhaust gas is separated from the other impurities and recovered.Type: GrantFiled: March 19, 2008Date of Patent: October 19, 2010Assignee: Chisso CorporationInventor: Satoshi Hayashida
-
Publication number: 20100247414Abstract: The crude oil reserves have a calculable time limit. Starting materials containing silicon dioxide are preferably used as raw materials.Type: ApplicationFiled: December 7, 2007Publication date: September 30, 2010Applicant: SILICON FIRE AGInventor: Florian Krass
-
Publication number: 20100233062Abstract: An apparatus and a method for producing trichlorosilane are provided, which effectively suppresses the reaction converting trichlorosilane to tetrachlorosilane and the formation of polymers, thereby achieving a high recovery ratio of trichlorosilane. The apparatus for producing trichlorosilane includes: a converter reactor for converting a raw material gas containing tetrachlorosilane and hydrogen into a reaction product gas; a cooler for cooling the reaction product gas fed from the converter reactor; and a plurality of provided in the cooler for spraying cooling liquids. Average droplet diameters of the cooling liquids sprayed from a plurality of the nozzles are different from each other, and a cooling liquids volume sprayed from each of the plurality of nozzles is able to be individually adjusted.Type: ApplicationFiled: March 10, 2010Publication date: September 16, 2010Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Wataru Saiki, Taner Akbay
-
Patent number: 7790132Abstract: The present invention includes a step of separating an effluent produced in a hydrogenation step of making tetrachlorosilane (STC) react with hydrogen into trichlorosilane (TCS), into a chlorosilane fraction containing a hydrocarbon and a TCS fraction, and a chlorination step of making the chlorosilane fraction containing the hydrocarbon react with chlorine to form STC and a substance containing a chlorinated hydrocarbon, wherein the effluent containing STC produced in the chlorination step is circulated to the hydrogenation step. In the chlorination step, the chlorosilane fraction containing a hydrocarbon (capable of containing hyper-hydrogenated chlorosilanes) having a boiling point close to TCS is hyper-chlorinated to be converted and acquire a higher boiling point, which facilitates the hyper-chlorinated chlorosilanes and the hyper-chlorinated hydrocarbons to be separated into high concentration, and increases the purity of TCS to be finally obtained.Type: GrantFiled: September 3, 2008Date of Patent: September 7, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Takaaki Shimizu, Kyoji Oguro
-
Publication number: 20100221169Abstract: Ultra high purity hexachlorodisilane is prepared from hexachlorodisilane-containing mixtures from numerous sources by distillation wherein water is present at less than 10 ppbw.Type: ApplicationFiled: October 7, 2008Publication date: September 2, 2010Applicant: WACKER CHEMIE AGInventors: Wolfgang Knies, Karin Bögershausen, Hans Eiblmeier
-
Publication number: 20100183496Abstract: An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.Type: ApplicationFiled: January 19, 2010Publication date: July 22, 2010Applicant: MITSUBISHI MATERIALS CORPORATIONInventor: Mitsutoshi Narukawa
-
Publication number: 20100178230Abstract: A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.Type: ApplicationFiled: May 23, 2008Publication date: July 15, 2010Applicant: Mitsubishi Materials CorporationInventors: Wataru Saika, Kazuki Mizushima, Makoto Urushihara
-
Publication number: 20100176082Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?1.Type: ApplicationFiled: December 21, 2007Publication date: July 15, 2010Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Emanuel I. Cooper, Eileen Sparks, William R. Bowers, Mark A. Biscotto, Kevin P. Yanders, Michael B. Korzenski, Prerna Sonthalia, Nicole E. Thomas
-
Patent number: 7754175Abstract: A process for preparing trichlorosilane by reacting silicon with hydrogen chloride, or silicon tetrachloride with hydrogen in the presence of silicon, and catalysts where the silicon and catalysts are laminated together and reduced in particle size prior to reaction.Type: GrantFiled: August 28, 2008Date of Patent: July 13, 2010Assignee: Dynamic Engineering, Inc.Inventors: Jon M. Bill, Jr., Carl W. Merkh
-
Patent number: 7740822Abstract: The objective of the present invention is to provide a method for obtaining a high purity disilicon hexachloride by removing a silanol with good efficiency from a disilicon hexachloride material containing the silanol as an impurity. The purification method for disilicon hexachloride of the present invention comprises a process for contacting a disilicon hexachloride material containing disilicon hexachloride and a silanol as an impurity with an adsorbent material such as activated carbon to remove the silanol. The method may further comprise a distillation process. The above processes are preferably performed in an atmosphere of an inert gas.Type: GrantFiled: March 17, 2006Date of Patent: June 22, 2010Assignee: Toagosei Co., Ltd.Inventors: Koji Ishikawa, Hiroshi Suzuki, Yoshinori Kimata
-
Publication number: 20100150809Abstract: The present invention includes a process and means for using two isolated by-products from the reaction of at least one of metallurgical silicon and silicon tetrachloride with at least one of anhydrous hydrogen chloride and hydrogen to produce trichlorosilane. The two isolated by-products are dichlorosilane and silicon tetrachloride. The present process reduces chlorosilane waste and improves efficiency of overall process for production of trichlorosilane for use in chemical vapor deposition of polysilicon for electronic and solar applications. The present invention further includes a chemical reactor for the reacting dichlorosilane with silicon tetrachloride to produce additional trichlorosilane.Type: ApplicationFiled: December 11, 2009Publication date: June 17, 2010Inventors: Jon M. Bill, JR., Carl W. Merkh, Charles L. Griffith, III
-
Patent number: 7736614Abstract: A process for removing aluminum and other metal chlorides from liquid chlorosilanes with the steps of: introducing a source of seed into a source of impure liquid chlorosilanes, initiating the crystallization of aluminum and other metal chlorides on the seed from the liquid chlorosilanes in a first agitated vessel, passing the resulting mixture of liquid and solids through a cooler into a second agitated vessel for additional crystallization, transferring the resulting mixture of liquid and solids into a solids removal device, transferring the liquid with reduced solids content to a further process or vessel and transferring the liquid with high solids content into a waste concentration device, passing the resulting liquid with reduced solids content to a further process or vessel and passing the resultant liquid with very high solids content to a waste storage vessel with agitation.Type: GrantFiled: April 7, 2008Date of Patent: June 15, 2010Assignee: Lord Ltd., LPInventor: Stephen Michael Lord
-
Publication number: 20100124525Abstract: The present invention is a process of producing chlorosilanes from a reaction of silicon tetrachloride in the presence of metallurgical grade silicon in a fluidized bed reactor, such that the fluidized bed reactor does not have an internal heat exchanger.Type: ApplicationFiled: November 17, 2009Publication date: May 20, 2010Inventor: Kuyen Li
-
Publication number: 20100111804Abstract: A reactor for hydrogenation of a silicon tetrahalide and metallurgical grade silicon to trihalosilane includes a bed of metallurgical silicon particles, one or more gas entry ports, one or more solids entry ports, one or more solids drains and one or more ports for removing the trihalosilane from the reactor. Fresh surfaces are generated on the bed particles by internal grinding and abrasion as a result of entraining feed silicon particles in a silicon tetrahalide/hydrogen feed stream entering the reactor and impinging that stream on the bed of silicon particles. This has the advantages of higher yield of the trihalosilane, higher burnup rate of the MGS, removal of spent MGS as a fine dust carryover in the trihalosilane effluent leaving the reactor and longer times between shutdowns for bed removal.Type: ApplicationFiled: November 5, 2008Publication date: May 6, 2010Inventor: Stephen Michael Lord
-
Patent number: 7708970Abstract: Polycrystalline silicon is prepared by thermally decomposing a reaction gas comprising hydrogen and a silicon-containing gas in a reaction chamber containing heated silicon, depositing additional silicon thereon, and forming an offgas; and separating the offgas into a first fraction comprising trichlorosilane and lower boiling chlorosilanes, and a second offgas fraction comprising components having a higher boiling point than trichlorosilane; recycling the first offgas fraction to the reaction gas of a polycrystalline silicon deposition; and separating the second offgas fraction into tetrachlorosilane and a high boiler fraction of high boilers, optionally also containing some tetrachlorosilane, and supplying the high boiler fraction to the reaction gas of a silicon deposition and heating the reaction gas to a temperature which ensures that the high boiler fraction is present in gaseous form on entry into the reaction chamber of the deposition reactor.Type: GrantFiled: January 12, 2009Date of Patent: May 4, 2010Assignee: Wacker ChemieInventors: Karl Hesse, Franz Schreieder
-
Patent number: 7691357Abstract: A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, poly-silane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.Type: GrantFiled: August 12, 2008Date of Patent: April 6, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Takaaki Shimizu, Kyoji Oguro, Takeshi Aoyama
-
Patent number: 7691356Abstract: A by-product mixture produced in a process for producing polycrystalline silicon is made to react with chlorine to form tetrachlorosilane (STC) distillate in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and inhibits carbon from contaminating the polycrystalline silicon. A donor/acceptor eliminator is provided in the circulation cycle for producing TCS, and accordingly there is no need to take out a by-product produced in the process for producing TCS to the outside of the system, which can highly purify the TCS.Type: GrantFiled: August 12, 2008Date of Patent: April 6, 2010Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Takaaki Shimizu, Kyoji Oguro
-
Publication number: 20100074823Abstract: In the apparatus for producing trichlorosilane in which metal silicon powder supplied into the reactor is reacted with hydrogen chloride gas while being fluidized by the gas, thereby taking out trichlorosilane generated by the reaction from the upper part of the reactor, and a plurality of gas flow controlling members are installed at the internal space of the reactor along the vertical direction.Type: ApplicationFiled: November 19, 2009Publication date: March 25, 2010Applicant: MITSUBISHI MATERIALS CORPORATIONInventor: Chikara Inaba
-
Publication number: 20100061913Abstract: A process for the recovery of silicon includes providing silicon-containing solids recovered from a silicon manufacturing process, said recovered silicon-containing solids being substantially free of semiconductor dopants; converting the recovered silicon-containing solids into gaseous silicon forms; subjecting to purification by minimal distillation; collecting the gaseous silicon forms as a condensed liquid of silicon-containing compounds; and utilizing the silicon-containing compounds for silicon deposition.Type: ApplicationFiled: August 4, 2009Publication date: March 11, 2010Inventors: Alleppey V. HARIHARAN, Jagannathan RAVI
-
Publication number: 20100061912Abstract: A process for high temperature hydrolysis of halosilanes and halides with the steps of: providing a bed of fluidized particulate material heated to at least 300° C., injecting steam and an excess of reactants into the reactor, removing solid waste from a bottom outlet, removing the effluent gases through a solids removal device such as a cyclone, condensing and separating some of the unreacted waste from the effluent gas in a distillation column and sending the effluent gases containing hydrogen and hydrogen chloride to a compressor. In a preferred embodiment the reactants contain at least one water reactive halide, selected from the group halosilane, organohalosilane, aluminum halide, titanium halide, boron halide, manganese halide, copper halide, iron halide, chromium halide, nickel halide, indium halide, gallium halide and phosphorus halide and where the halide content is selected from chlorine, bromine and iodine.Type: ApplicationFiled: September 8, 2008Publication date: March 11, 2010Inventor: Stephen Michael Lord
-
Patent number: 7666379Abstract: A process and apparatus is provided for the purification of binary halide fluid. The process and apparatus purifies the binary halide fluid by selectively removing Bronsted acid impurities and/or volatile oxygen containing impurities present in the binary halide. A regenerable adsorbent polymer is utilized to remove the Bronsted acid impurities from the binary halide fluid and a volatile oxide adsorbent having a specific adsorption capacity for the volatile oxide impurity is utilized to remove the volatile oxide from the binary halide when in gaseous form.Type: GrantFiled: December 2, 2005Date of Patent: February 23, 2010Assignee: Voltaix, Inc.Inventors: Leisl Dukhedin-Lalla, German Shekk, John P. de Neufville, Michael Pikulin
-
Publication number: 20100034722Abstract: An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.Type: ApplicationFiled: August 3, 2009Publication date: February 11, 2010Applicant: Mitsubishi Materials CorporationInventors: Toshiyuki Ishii, Eiji Komai, Harumi Satoh
-
Publication number: 20100034721Abstract: An apparatus 1 for manufacturing trichlorosilane includes a decomposition furnace 2 into which polymers and hydrogen chloride are introduced, the decomposition furnace 2 includes: a heating device 11 which heats an interior of the decomposition furnace 2; a reaction chamber 4 which is formed in the decomposition furnace; a center tube 3 which is inserted in the reaction chamber 4 along a longitudinal direction of the reaction chamber and has a lower-end opening portion 3a; raw-material-supply pipes 5 and 6 which supplies the polymer and the hydrogen chloride to the reaction chamber 4 at an exterior of the center tube 3; and a gas-discharge pipe 7 which leads out reacted gas from the center tube 3, the apparatus 1 further includes a fin 14 that leads the polymer and the hydrogen chloride to the lower-end opening portion 3a of the center tube 3 so as to stir the polymer and the hydrogen chloride.Type: ApplicationFiled: August 3, 2009Publication date: February 11, 2010Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Toshiyuki Ishii, Eiji Komai, Harumi Satoh
-
Publication number: 20100024882Abstract: The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiHCl3 is converted to Si metal by contacting gaseous SiHCl3 with liquid Zn, thereby obtaining a Si-bearing alloy, H2 and ZnCl2, which are separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiHCl3 towards the end product. The only other reactant is Zn, which can be obtained in very high purity grades, and which can be recycled after electrolysis of the Zn-chloride.Type: ApplicationFiled: September 18, 2007Publication date: February 4, 2010Inventors: Eric Robert, Tjakko Zijlema
-
Publication number: 20100008842Abstract: High yields of trichlorosilane are achieved in the reaction of tetrachlorosilane and hydrogen at a temperature in the range of 900° C. to 1300° C. and a pressure above the critical pressure of the reactants.Type: ApplicationFiled: October 12, 2007Publication date: January 14, 2010Applicant: WACKER CHEMIE AGInventors: Bernhard Pfluegler, Robert Ring
-
Patent number: 7641872Abstract: In the apparatus for producing trichlorosilane in which metal silicon powder supplied into the reactor is reacted with hydrogen chloride gas while being fluidized by the gas, thereby taking out trichlorosilane generated by the reaction from the upper part of the reactor, and a plurality of gas flow controlling members are installed at the internal space of the reactor along the vertical direction.Type: GrantFiled: October 17, 2008Date of Patent: January 5, 2010Assignee: Mitsubishi Materials CorporationInventor: Chikara Inaba
-
Publication number: 20090324477Abstract: An apparatus comprising: a reaction chamber 2 into which silicon tetrachloride and hydrogen is introduced for producing a reaction product gas containing trichlorosilane and hydrogen chloride by a reductive reaction at a temperature of not lower than 800° C.; a reaction product gas discharging device 4 that discharges the reaction product gas in the reaction chamber 2 to the outside; a cooling gas introducing device 5 that mixes hydrogen, silicon tetrachloride, or hydrogen chloride in the reaction product gas being discharged by the reaction product gas discharging device 4 to cool the reaction product gas.Type: ApplicationFiled: October 26, 2007Publication date: December 31, 2009Applicant: Mitsubishi Materials CorporationInventors: Kazuki Mizushima, Makoto Urushihara
-
Publication number: 20090317317Abstract: A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel.Type: ApplicationFiled: September 1, 2009Publication date: December 24, 2009Applicant: Matheson Tri-Gas, Inc.Inventors: Carrie L. Wyse, Robert Torres, JR., Joseph V. Vininski
-
Publication number: 20090285743Abstract: A method and an apparatus for producing trichlorosilane comprising: producing reaction product gas containing trichlorosilane and hydrogen chloride by initiating a reaction of silicon tetrachloride and hydrogen at 900° C. to 1900° C.; preventing a reverse reaction to silicon tetrachloride and by-production of a polymer by cooling the reaction product gas discharged from the reaction chamber to 300° C. to 800° C., thereby optimizing the cooling rate of the reaction gas; preheating at least one of the silicon tetrachloride and the hydrogen introduced into the reaction chamber 2 by exchanging heat with the thus cooled reaction product gas.Type: ApplicationFiled: October 26, 2007Publication date: November 19, 2009Applicant: Mitsubishi Materials CorporationInventors: Kazuki Mizushima, Yuji Shimizu
-
Publication number: 20090238748Abstract: Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container 1 is filled with sodium chloride and heated by a heating device 17, a gas containing chlorosilanes produced by a reaction between metallurgical grade silicon and hydrogen chloride passes through the sodium chloride layer 16 to generate a double salt of aluminum chloride contained in the gas and the sodium chloride, and the gas from which the double salt is separated is recovered from a gas recovery tube 26.Type: ApplicationFiled: March 20, 2009Publication date: September 24, 2009Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Teruhisa Kitagawa, Mitsutoshi Narukawa, Chikara Inaba
-
Patent number: 7588741Abstract: Cyclical batch processes for halogenation, such as chlorination, of minerals in a fixed bed using a plurality of cycles which include the steps of at least partially evacuating the bed, charging the bed with reactant gas, maintaining the reactant gas in the bed for a predetermined time, and exhausting reaction products under vacuum. Also disclosed is the chlorination of spodumene in its beta crystalline form produced by calcining spodumene in its naturally-occurring alpha crystalline form to preferentially extract lithium as lithium chloride.Type: GrantFiled: March 28, 2005Date of Patent: September 15, 2009Inventors: Wendell E. Dunn, Jr., Jeffrey Van Jahnke
-
Publication number: 20090220403Abstract: A method and an apparatus for manufacturing trichlorosilane are disclosed. A polymer containing high boiling chlorosilane compounds that are generated in a polycrystalline silicon manufacturing process are mixed with hydrogen chloride and introduced into a decomposition furnace. The polymer and the hydrogen chloride are reacted at a temperature of 450° C., and preferably of 450° C. or more and 700° C. or less. Preferably a mixture containing the polymer and hydrogen chloride of 10 to 30 mass % with respect to the weight of the polymer is introduced into the decomposition furnace.Type: ApplicationFiled: February 26, 2009Publication date: September 3, 2009Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Noboru Tachino, Hisayuki Takesue, Harumi Satoh
-
Patent number: 7569716Abstract: Chemical grade silicon metalloid having improved performance in the direct process for making organohalosilanes is selected by (A) measuring the temperature of each batch of silicon metalloid during both the refining and the casting of the silicon metalloid; (B) measuring the elemental impurity levels in each batch of the silicon metalloid after refining of the silicon metalloid; (C) predicting the properties of the slag phase produced during refining of the silicon metalloid based on equilibrium calculations using the elemental impurity levels and the measured temperatures of each batch of silicon metalloid; and (D) selecting a chemical grade silicon metalloid for use in the direct process for making organohalosilanes based upon the predicted slag properties; such that the slag density, the viscosity, and the melting point of the slag, are within acceptable and predetermined ranges for each individual batch.Type: GrantFiled: March 15, 2005Date of Patent: August 4, 2009Assignee: Dow Corning CorporationInventors: Vishu Dutt Dosaj, Michael George Kroupa, Paul Jacques Marion
-
Publication number: 20090169457Abstract: The invention relates to a method for the final product-related manufacture of low-molecular, medium-molecular, and high-molecular halogenated polysilanes, the distillation thereof into selected fractions, the direct deposition of silicon from the gas phase or a liquid phase of polysilane mixtures or polysilanes, the hydrogenation or derivation of halogenated polysilanes, and the processing into final products in an adequate system.Type: ApplicationFiled: July 20, 2007Publication date: July 2, 2009Inventors: Gudrun Annette Auner, Christian Bauch, Gerd Lippold, Rumen Deltschew
-
Publication number: 20090142246Abstract: Provided is a method for separating and recovering conversion reaction gas, wherein after a conversion reaction process for producing trichlorosilane from hydrogen gas and silicon tetrachloride comprising; condensing step of cooling discharged gas, separating step of silicon tetrachloride from the condensed liquid, and recovering disilicon hexachloride. For example, the method includes a first distillation process for distilling trichlorosilane from the condensed liquid, a second distillation process for distilling silicon tetrachloride from residual liquid of the first distillation process, and a third distillation process for distilling disilicon hexachloride from residual liquid of the second distillation process.Type: ApplicationFiled: November 26, 2008Publication date: June 4, 2009Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Nobuhisa Masuda, Noboru Tachino
-
Publication number: 20090123359Abstract: A reaction apparatus for producing trichlorosilane in which metal silicon powder M is reacted with hydrogen chloride gas, thus generating trichlorosilane, includes: an apparatus body into which the metal silicon powder is supplied; and an ejection port for ejecting the hydrogen chloride gas into the apparatus body from the bottom part of the apparatus body, wherein a plurality of holed pieces having a through hole penetrating in the thickness direction and a plurality of pellets interposed between these holed pieces are stacked in a mixed state on the upper side of the ejection port.Type: ApplicationFiled: October 22, 2008Publication date: May 14, 2009Applicant: MITSUBISHI MATERIALS CORPORATIONInventor: Chikara Inaba
-
Publication number: 20090108100Abstract: There is provided a hydrogen chrolide gas ejecting nozzle I used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends.Type: ApplicationFiled: October 22, 2008Publication date: April 30, 2009Applicant: MITSUBISHI MATERIALS CORPORATIONInventor: Chikara Inaba
-
Publication number: 20090104104Abstract: In the apparatus for producing trichlorosilane in which metal silicon powder supplied into the reactor is reacted with hydrogen chloride gas while being fluidized by the gas, thereby taking out trichlorosilane generated by the reaction from the upper part of the reactor, and a plurality of gas flow controlling members are installed at the internal space of the reactor along the vertical direction.Type: ApplicationFiled: October 17, 2008Publication date: April 23, 2009Applicant: MITSUBISHI MATERIALS CORPORATIONInventor: Chikara Inaba
-
Patent number: 7521574Abstract: Organohalosilanes are prepared by charging a reactor with a contact mass comprising metallic silicon and a catalyst and feeding an organohalide-containing gas to the reactor. The contact mass is prepared by premixing metallic silicon and a tin compound and heat treating the premix at 300-600° C. in an inert gas atmosphere.Type: GrantFiled: October 18, 2005Date of Patent: April 21, 2009Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Mikio Aramata, Hajime Ishizaka, Tetsuya Inukai, Kenji Saito
-
Publication number: 20090068081Abstract: This method for purifying chlorosilanes includes: introducing oxygen (O2) into the chlorosilanes containing a boron impurity and a phosphorous impurity in the presence of an aromatic aldehyde; treating the chlorosilanes to convert the impurities into high boiling compounds at the same time; and subjecting the chlorosilanes after having been treated to a distillation process or the like to separate the high boiling compounds of boron and phosphorous from the chlorosilanes. The high boiling compounds produced through the above described treatment are not decomposed into low boiling compounds by the heat applied after the high boiling compounds having been produced, so that the high boiling compounds can be easily separated from the chlorosilanes through treatment such as distillation. Accordingly, the boron impurity and the phosphorous impurity can be removed with a single process.Type: ApplicationFiled: September 4, 2008Publication date: March 12, 2009Applicant: Shin -Etsu Chemical Co., Ltd.Inventors: Katsuhiro UEHARA, Tohru Kubota, Mitsuyoshi Osima
-
Publication number: 20090060817Abstract: A by-product mixture produced in a process for producing polycrystalline silicon is made to react with chlorine to form tetrachlorosilane (STC) distillate in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and inhibits carbon from contaminating the polycrystalline silicon. A donor/acceptor eliminator is provided in the circulation cycle for producing TCS, and accordingly there is no need to take out a by-product produced in the process for producing TCS to the outside of the system, which can highly purify the TCS.Type: ApplicationFiled: August 12, 2008Publication date: March 5, 2009Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Takaaki SHIMIZU, Kyoji Oguro
-
Publication number: 20090060819Abstract: A process for preparing high purity trichlorosilane (TCS) utilizing contaminated by-products of primary reaction products hydrogen chloride, metallurgical or chemical grade silicon stock, and/or by-products of the improved Siemens process, including “dirty” TCS containing low boiling impurities such as dichlorosilane (DCS) and “dirty” STC containing high boiling impurities. The “dirty” STC is first purified and a portion is reacted with “dirty” TCS containing DCS to produce additional TCS feedstock for the TCS purification process. Another portion of the purified STC is hydrogenated and converted back to TCS providing another feedstock to the TCS purification process. Overall net yield of high purity TCS produced is increased over established practice.Type: ApplicationFiled: August 28, 2008Publication date: March 5, 2009Inventors: Jon M. Bill, JR., Carl W. Merkh
-
Publication number: 20090060818Abstract: A process for preparing trichlorosilane by reacting silicon with hydrogen chloride, or silicon tetrachloride with hydrogen in the presence of silicon, and catalysts where the silicon and catalysts are laminated together and reduced in particle size prior to reaction.Type: ApplicationFiled: August 28, 2008Publication date: March 5, 2009Inventors: Jon M. Bill, JR., Carl W. Merkh
-
Publication number: 20090060820Abstract: The present invention includes a step of separating an effluent produced in a hydrogenation step of making tetrachlorosilane (STC) react with hydrogen into trichlorosilane (TCS), into a chlorosilane fraction containing a hydrocarbon and a TCS fraction, and a chlorination step of making the chlorosilane fraction containing the hydrocarbon react with chlorine to form STC and a substance containing a chlorinated hydrocarbon, wherein the effluent containing STC produced in the chlorination step is circulated to the hydrogenation step. In the chlorination step, the chlorosilane fraction containing a hydrocarbon (capable of containing hyper-hydrogenated chlorosilanes) having a boiling point close to TCS is hyper-chlorinated to be converted and acquire a higher boiling point, which facilitates the hyper-chlorinated chlorosilanes and the hyper-chlorinated hydrocarbons to be separated into high concentration, and increases the purity of TCS to be finally obtained.Type: ApplicationFiled: September 3, 2008Publication date: March 5, 2009Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Takaaki Shimizu, Kyoji Oguro