Utilizing Reducing Substance Patents (Class 423/350)
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Publication number: 20130149549Abstract: Compositions made by metallothermal reduction from aerogels and phase separated glasses and glass ceramics formed and methods of producing such compositions are provided. The compositions have novel structures that incorporate nanoporous silicon and other metal, metalloid, or metal-oxide nanowires in form of three-dimensional scaffolds. Additional compositions possess unusual photoluminescence properties that indicate possible applications in lighting and electronics.Type: ApplicationFiled: December 4, 2012Publication date: June 13, 2013Inventors: Nicholas Francis Borrelli, Shawn Michael O'Malley, Vitor Marino Schneider
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Patent number: 8449848Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.Type: GrantFiled: October 22, 2010Date of Patent: May 28, 2013Assignee: MEMC Electronic Materials, Inc.Inventors: Satish Bhusarapu, Yue Huang, Puneet Gupta
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Patent number: 8435477Abstract: Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles.Type: GrantFiled: September 22, 2011Date of Patent: May 7, 2013Assignee: NanoGram CorporationInventors: Nobuyuki Kambe, Shivkumar Chiruvolu
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Publication number: 20130099159Abstract: One embodiment may include a method of making nanoparticles comprising elemental metals or metalloids and/or alloys thereof. The method may include reducing a metal halide or a metalloid halide with an alkali metal to produce a reaction product comprising particles of the desired metal or metalloid and a halide salt. One embodiment may include introducing reactants to each other in the presence of a non-reactive solvent and/or inducing cavitation in the reactants and/or the non-reactive solvent when present. Certain metals or metalloids such as tin, aluminum, silicon, antimony, indium or bismuth may be useful in electrochemical cells such as lithium-ion cells when produced by these illustrative methods. One embodiment of a battery electrode may include nanoparticles that may be produced by these or other methods.Type: ApplicationFiled: October 25, 2011Publication date: April 25, 2013Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLCInventors: Ion C. Halalay, Michael P. Balogh
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Publication number: 20130089490Abstract: Method for producing nano- to micro-scale particles of a material by homogeneous thermal decomposition or reduction of a reactant gas (12) containing the material, whereby the method comprises the steps of supplying the reactant gas (12) to a reaction chamber (16) of a reactor via at least one inlet, and a) heating the reactant gas (12) to a temperature sufficient for thermal decomposition or reduction of the reactant gas (12) to take place inside the reaction chamber (16), or b) confining a temperature dependent reaction or reaction sequence involving a plurality of reactants inside the reaction chamber (16). The method comprises the step of supplying a primary gas (22) through a porous membrane (20) constituting at least part of at least one wall of the reaction chamber (16) to provide a protective inert gas boundary to minimize or prevent the deposition of the material on the porous membrane (20).Type: ApplicationFiled: October 11, 2012Publication date: April 11, 2013Inventors: Wener FILTVEDT, Arve Holt
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Patent number: 8372372Abstract: A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.Type: GrantFiled: June 1, 2011Date of Patent: February 12, 2013Assignee: Mitsubishi Materials CorporationInventors: Kazuhiro Sakai, Yukiyasu Miyata
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Patent number: 8354088Abstract: Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry.Type: GrantFiled: July 1, 2011Date of Patent: January 15, 2013Assignee: Iosil Energy CorporationInventor: John Allan Fallavollita
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Patent number: 8337795Abstract: A process to the production of silicon from amorphous silica is disclosed. The amorphous silica is formed from a material rich in silica, especially rice husk ash or silica fume. The process comprises subjecting the amorphous silica to leaching with a lixiviant of aqueous mineral acid, especially hydrochloric acid. Preferably, material rich in silica is roasted at a temperature of not more than 850° C., subjected to leaching and then subjected to a second roasting at a temperature of less than 750° C. The process provides for the production of high purity silicon, especially to the production of solar grade silicon (SoG-Si).Type: GrantFiled: August 25, 2010Date of Patent: December 25, 2012Assignee: Process Research Ortech Inc.Inventors: Mansoor Barati, Kingsley Kweku Larbi, Raja Roy, Vaikuntam I. Lakshmanan, Ramamritham Sridhar
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Patent number: 8318121Abstract: In a device and a method for the processing of non-ferrous metals for simple and economic reduction of the concentration of impurity elements and/or impurity compounds contained in the non-ferrous metal, it is provided to gas the non-ferrous metal in a processing column with at least one gas at a low pressure, causing the impurity elements and/or impurity compounds to evaporate.Type: GrantFiled: October 13, 2007Date of Patent: November 27, 2012Assignee: Sunicon AGInventors: Karsten Wambach, Claudia Knopf, Ingo Röver
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Patent number: 8282904Abstract: A cylindrical vessel made of carbon is used in the production of silicon. The inner surface of the vessel comes into contact with a silicon melt, wherein the permeation with silicon melt is reduced, formation of SiC is suppressed, and the vessel is resistant to deformation even when volumetric expansion ascribable to silicon is brought about. The carbon-made cylindrical vessel is made of a carbon material having a bulk specific gravity of 1.8 or more. The thermal expansion coefficient of the carbon material at 350 to 450° C. is preferably 3.5×10?6/° C. to 6.0×10?6/° C. A process for producing silicon uses said vessel wherein a chlorosilane is reacted with hydrogen.Type: GrantFiled: June 22, 2005Date of Patent: October 9, 2012Assignee: Tokuyama CorporationInventors: Junichirou Nakashima, Satoru Wakamatsu, Manabu Sakita
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Publication number: 20120244059Abstract: In one aspect of a method for producing silicon tetrachloride comprises a step in which a silicon-containing substance that contains zeolite or preferably spent zeolite, is used for chlorination in the presence of a carbon containing substance.Type: ApplicationFiled: September 27, 2010Publication date: September 27, 2012Applicant: JX NIPPON OIL & ENERGY CORPORATIONInventors: Shinya Hayashi, Tsuyoshi Asano
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Patent number: 8273317Abstract: An method for manufacturing a high purity polycrystalline silicon is characterized by comprising: supplying a silicon chloride gas from a silicon chloride gas supply nozzle and a zinc gas from a zinc gas supply nozzle into a vertical reactor, and generating downward a polycrystalline silicon agglomerated in an almost tube shape on the leading end part of the silicon chloride gas supply nozzle by the reaction of the silicon chloride gas and the zinc gas.Type: GrantFiled: July 22, 2010Date of Patent: September 25, 2012Assignee: JNC CorporationInventor: Nobuaki Namiki
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Publication number: 20120230904Abstract: A process to the production of silicon from amorphous silica is disclosed. The amorphous silica is formed from a material rich in silica, especially rice husk ash or silica fume. The process comprises subjecting the amorphous silica to leaching with a lixiviant of aqueous mineral acid, especially hydrochloric acid. Preferably, material rich in silica is roasted at a temperature of not more than 850° C., subjected to leaching and then subjected to a second roasting at a temperature of less than 750° C. The process provides for the production of high purity silicon, especially to the production of solar grade silicon (SoG-Si).Type: ApplicationFiled: August 25, 2010Publication date: September 13, 2012Inventors: Mansoor Barati, Kingsley Kweku Larbi, Raja Roy, Vaikuntam I. Lakshmanan, Ramamritham Sridhar
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Publication number: 20120230905Abstract: The present invention relates to processes for industrial pyrolysis of a carbohydrate or carbohydrate mixture with addition of amorphous carbon, to a pyrolysis product thus obtainable and to the use thereof, especially as a reducing agent in the production of silicon from silica and carbon at high temperature.Type: ApplicationFiled: November 4, 2010Publication date: September 13, 2012Applicant: EVONIK DEGUSSA GMBHInventors: Alfons Karl, Jürgen Erwin Lang, Hartwig Rauleder, Bodo Frings
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Patent number: 8241401Abstract: The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.Type: GrantFiled: November 2, 2010Date of Patent: August 14, 2012Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA), Mitsubishi Materials CorporationInventors: Takeshi Kamei, Yasunari Takimoto
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Patent number: 8187361Abstract: Purified SiHCl3 and/or SiCl4 are used as a sweep gas across a permeate side of a gas separation membrane receiving effluent gas from a polysilicon reactor. The combined sweep gas and permeate is recycled to the reactor.Type: GrantFiled: July 2, 2009Date of Patent: May 29, 2012Assignee: America Air Liquide, Inc.Inventors: Sarang Gadre, Madhava R. Kosuri
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Patent number: 8187564Abstract: Provided is a process for producing a boron added silicon (purified silicon) in an energy saving mode from a reduced silicon obtained by reducing a silicon halide with a metal aluminium. The production process of the invention comprises reducing a silicon halide with a metal aluminium to give a reduces silicon, heating and melting the resulting reduced silicon, and adding boron thereto followed by solidification for purification under the condition of a temperature gradient provided in one direction in a mold. Preferably, after washed with an acid, the reduced silicon is heated and molten, and boron is added thereto. After the reduced silicon is heated and molten under reduced pressure, boron is added thereto. After heated and molten, the reduced silicon is purified by solidification in one direction, then heated and molten, and thereafter boron is added thereto.Type: GrantFiled: February 13, 2009Date of Patent: May 29, 2012Assignee: Sumitomo Chemical Company, LimitedInventors: Tomohiro Megumi, Hiroshi Tabuchi
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Patent number: 8173094Abstract: The present invention provides a method for producing polycrystalline silicon. The method for producing polycrystalline silicon comprises the steps of (A), (B), and (C), (A) reducing a chlorosilane represented by the formula (1) with a metal at a temperature T1 to obtain a silicon compound; SiHnCl4-n??(1) ?wherein n is an integer of 0 to 3, (B) transferring the silicon compound to a zone having a temperature T2, wherein T1>T2; and (C) depositing polycrystalline silicon in the zone having a temperature T2, wherein the temperature T1 is not less than 1.29 times of a melting point (Kelvin unit) of the metal, and the temperature T2 is higher than a sublimation point or boiling point of the chloride of the metal.Type: GrantFiled: December 26, 2006Date of Patent: May 8, 2012Assignee: Sumitomo Chemical Company, LimitedInventors: Toshiharu Yamabayashi, Masahiko Hata
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Publication number: 20120100061Abstract: Production of polycrystalline silicon in a substantially closed-loop process is disclosed. The processes generally include decomposition of trichlorosilane produced from metallurgical grade silicon.Type: ApplicationFiled: October 22, 2010Publication date: April 26, 2012Applicant: MEMC Electronic Materials, Inc.Inventors: Satish Bhusarapu, Yue Huang, Puneet Gupta
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Patent number: 8158093Abstract: Methods and apparatus for the production of high purity silicon including a fluidized bed reactor with one or more protective layers deposited on an inside surface of the fluidized bed reactor. The protective layer may be resistant to corrosion by fluidizing gases and silicon-bearing gases.Type: GrantFiled: October 13, 2010Date of Patent: April 17, 2012Assignee: Siliken Chemicals, S.L.Inventors: Javier San Segundo Sanchez, Jose Luis Montesinos Barona, Evaristo Ayuso Conejero, Manuel Vicente Vales Canle, Xavier Benavides Rel, Pedro-Tomas Lujan Garcia, Maria Tomas Martinez
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Patent number: 8147656Abstract: The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.Type: GrantFiled: May 23, 2006Date of Patent: April 3, 2012Assignee: Spawnt Private S.A.R.L.Inventor: Norbert Auner
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Publication number: 20120077034Abstract: A method for making silicon nanorods is provided. In accordance with the method, Au nanocrystals are reacted with a silane in a liquid medium to form nanorods, wherein each of said nanorods has an average diameter within the range of about 1.2 nm to about 10 nm and has a length within the range of about 1 nm to about 100 nm.Type: ApplicationFiled: April 14, 2010Publication date: March 29, 2012Inventors: Andrew T. Heitsch, Colin M. Hessel, Brian A. Korgel
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Publication number: 20120063985Abstract: In a silicon manufacturing apparatus and its related manufacturing method, a zinc gas supply opening (18b, 180b, 181b, 182b, 183b, 184b, 185b, 280a) is placed above a silicon tetrachloride gas opening (16a, 160a). A part of a reactor (10, 100), heated by a heater (22), is set to a silicon depositing temperature range, during which silicon tetrachloride gas is supplied from the silicon tetrachloride gas opening to the reactor to which zinc gas is supplied from the zinc gas supply opening, whereby silicon tetrachloride is reduced with zinc in the reactor to form a silicon depositing region (S), in which silicon is deposited on a wall portion in the reactor corresponding to a region thereof that is set to the silicon depositing temperature range.Type: ApplicationFiled: May 19, 2010Publication date: March 15, 2012Applicant: ASAHI GLASS COMPANY, LIMITEDInventors: Katsumasa Nakahara, Daisuke Sakaki
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Publication number: 20120058040Abstract: The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.Type: ApplicationFiled: August 29, 2011Publication date: March 8, 2012Applicant: WACKER CHEMIE AGInventors: Walter HAECKL, Karl HESSE, Wilhelm HOEBOLD, Reinhard WOLF
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Patent number: 8124041Abstract: A process for producing silicon comprises the steps of a reduction step [1] of depositing silicon by reacting chlorosilanes and hydrogen in a reactor under heat and discharging an exhaust gas that contains hydrogen, oligomers of silanes, and a silicon powder; a carring step [2] of carrying the exhaust gas that has been exhausted in the step [1] while keeping a temperature of the exhaust gas at not less than 105° C.; a removal step [3] of supplying the exhaust gas that has been carried in the step [2] to a filter at a temperature of not less than 105° C. and discharging the exhaust gas from the filter at a temperature of not less than 105° C. to remove the silicon powder from the exhaust gas and give a mixed gas that contains the hydrogen and the oligomers of silanes; and a separation step [4] of cooling the mixed gas that has been obtained in the step [3] to separate the hydrogen as a gas phase from the mixed gas.Type: GrantFiled: April 16, 2009Date of Patent: February 28, 2012Assignee: Tokuyama CorporationInventors: Manabu Sakida, Satoru Wakamatsu
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Publication number: 20120045383Abstract: Disclosed is method for the production of silicon metal of a purity sufficient for the manufacture of commercial grade photovoltaic devices, by first reacting liquid silicon tetrachloride with molten sodium metal, and then by processing the reaction product to remove from the silicon metal, those reaction products which would be detrimental to the performance of the produced silicon metal in commercial grade photovoltaic devices used to generate electric power for commercial sale.Type: ApplicationFiled: September 6, 2011Publication date: February 23, 2012Inventors: Andrew Matheson, John W. Koenitzer
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Publication number: 20120037041Abstract: The invention relates to a method for producing metal nanoparticles, wherein metal ions are reduced by means of at least one reducing agent in the presence of at least one polymer stabilizer and are converted into metal nanoparticles. The invention further relates to metal nanoparticles obtained in this way and to the use thereof.Type: ApplicationFiled: November 20, 2009Publication date: February 16, 2012Inventors: Ulrich Nolte, Michael Berkei, Thomas Sawilowski
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Patent number: 8110167Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.Type: GrantFiled: February 10, 2009Date of Patent: February 7, 2012Assignee: Battelle Memorial InstituteInventors: Jiguang Zhang, Jun Liu, Zhenguo Yang, Guanguang Xia, Leonard S Fifield, Donghai Wang, Daiwon Choi, Gordon Graff, Larry R Pederson
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Publication number: 20110280786Abstract: A method for producing silicon, the method comprising a heating step of heating a metal powder Mp1 made of at least one member selected from the group consisting of Mg, Ca and Al in a plasma P; and a reducing step of reducing a halogenated silane G1 by the metal powder Mp2 heated in the plasma P to obtain silicon.Type: ApplicationFiled: December 10, 2009Publication date: November 17, 2011Applicants: NATIONAL INSTITUTE FOR MATERIALS SCIENCE, SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Kunio Saegusa, Kentaro Shinoda, Hideyuki Murakami
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Publication number: 20110268643Abstract: A process is provided for the production of elemental silicon from a silica containing glass melt including contacting the glass with a metal capable of undergoing a bimolecular reaction between the glass and metal at elevated temperature to reduce the oxidation state of the silicon in the glass to elemental silicon while oxidizing the metal, collecting, and optionally separating the elemental silicon. Similarly, elemental germanium is produced from a germania-containing glass.Type: ApplicationFiled: October 9, 2009Publication date: November 3, 2011Inventors: Johon R. Leblanc, Diane S. LeBlance
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Publication number: 20110262336Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a silicon oxide, purified by acidic precipitation from an aqueous solution of a silicon oxide dissolved in an aqueous phase, using one or more pure carbon sources, the purified silicon oxide being obtained, in particular, by the precipitation of a silicon oxide dissolved in an aqueous phase in an acidifier. The invention also relates to a formulation containing an activator and to a device for producing silicon, a reactor and electrodes.Type: ApplicationFiled: September 28, 2009Publication date: October 27, 2011Inventors: Hartwig Rauleder, Ekkehard Mueh, Mustafa Siray, Peter Nagler, Bodo Frings, Ingrid Lunt-Rieg, Alfons Karl, Christian Panz, Thomas Groth, Guido Stochniol, Matthias Rochnia, Juergen Erwin Lang, Oliver Wolf, Rudolf Schmitz, Bernd Nowitzki, Dietmar Wewers
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Publication number: 20110262339Abstract: The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon.Type: ApplicationFiled: September 28, 2009Publication date: October 27, 2011Inventors: Hartwig Rauleder, Ekkehard Müh, Mustafa Siray, Peter Nagler, Bodo Frings, Ingrid Lunt-Rieg, Alfons Karl, Christian Panz, Thomas Groth, Guido Stochniol, Matthias Rochnia, Jürgen Erwin Lang, Oliver Wolf, Rudolf Schmitz, Bernd Nowitzki, Dietmar Wewers
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Patent number: 8043593Abstract: An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.Type: GrantFiled: April 13, 2010Date of Patent: October 25, 2011Assignee: Evonik Degussa GmbHInventors: Markus Pridoehl, Paul Roth, Hartmut Wiggers, Frank-Martin Petrat, Michael Kraemer
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Publication number: 20110256047Abstract: The present invention provides a method of purifying a material using a cascading dissolution and washing process. The dissolution and washing processes can contain single or multiple stages. Water and dissolving chemicals are recycled through the process towards the beginning of the process.Type: ApplicationFiled: April 14, 2010Publication date: October 20, 2011Applicant: 6N Silicon Inc.Inventors: Scott Nichol, Anthony Tummillo, Dan Smith
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Patent number: 8034300Abstract: This apparatus for producing trichlorosilane includes: a vessel having a gas inlet that introduces a feed gas into the vessel and a gas outlet that discharges a reaction product gas to the outside; a plurality of silicon core rods provided inside the vessel; and a heating mechanism that heats the silicon core rods, wherein a feed gas containing silicon tetrachloride and hydrogen is reacted to produce a reaction product gas containing trichlorosilane and hydrogen chloride. The silicon core rods may be disposed so as to stand upright on the bottom of the vessel, and the heating mechanism may have electrode portions that hold the lower end portions of the silicon core rods on the bottom of the vessel and a power supply that applies an electric current to the silicon core rods through the electrode portions to heat the silicon core rods.Type: GrantFiled: November 27, 2007Date of Patent: October 11, 2011Assignee: Mitsubishi Materials CorporationInventor: Toshiyuki Ishii
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Publication number: 20110236292Abstract: A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.Type: ApplicationFiled: June 1, 2011Publication date: September 29, 2011Applicant: MITSUBISHI MATERIALS CORPORATIONInventors: Kazuhiro Sakai, Yukiyasu Miyata
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Patent number: 8017099Abstract: A method for producing polycrystalline silicon, including: reacting trichlorosilane and hydrogen to produce silicon and a remainder including monosilanes (formula: SiHnCl4-n, wherein n is 0 to 4) containing silicon tetrachloride, and a polymer including at least trisilanes or tetrasilanes; and supplying the remainder and hydrogen to a conversion reactor and heating at a temperature within the range of 600 to 1,400° C. to convert silicon tetrachloride into trichlorosilane and the polymer into monosilanes.Type: GrantFiled: October 26, 2007Date of Patent: September 13, 2011Assignee: Mitsubishi Materials CorporationInventor: Masayuki Tebakari
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Publication number: 20110217225Abstract: A method and apparatus for refining metallurgical silicon to produce solar grade silicon for use in photovoltaic cells. A crucible in a vacuum furnace receives a mixture of metallurgical silicon and a reducing agent such as calcium disilicide. The mix is melted in non-oxidizing conditions within the furnace under an argon partial pressure. After melting, the argon partial pressure is decreased to produce boiling and the process ends with directional solidification. The process reduces impurities, such as phosphorus, to a level compatible with solar-grade silicon and reduces other impurities significantly.Type: ApplicationFiled: October 28, 2009Publication date: September 8, 2011Applicant: Crystal System, Inc.Inventors: Frederick Schmid, David B. Joyce
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Publication number: 20110206592Abstract: The present invention is directed to a method for providing an agricultural waste product having amorphous silica, carbon, and impurities; extracting from the agricultural waste product an amount of the impurities; changing the ratio of carbon to silica; and reducing the silica to a high purity silicon (e.g., to photovoltaic silicon).Type: ApplicationFiled: August 6, 2009Publication date: August 25, 2011Inventors: Richard M. Laine, David James Krug, Julien Claudius Marchal, Andrew Stewart Mccolm
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Publication number: 20110182795Abstract: A process for producing silicon comprising reacting silica with a reducing gas comprising carbon monoxide, wherein the reducing gas does not contain elemental carbon. A reactor for producing silicon comprising a carbon combustion chamber for reacting carbon with oxygen to generate a reducing gas comprising carbon monoxide, wherein the reducing gas contains no elemental carbon; a reaction chamber for reacting the reducing gas containing no elemental carbon with silica, the reaction chamber communicating with the carbon combustion chamber; a temperature controller for controlling the temperature of the reaction chamber; a silica inlet port communicating with the reaction chamber for admitting the silica to the reaction chamber; and a silicon outlet port communicating with the reaction chamber for allowing the silicon to leave the reaction chamber.Type: ApplicationFiled: February 19, 2009Publication date: July 28, 2011Applicant: CBD Energy LimitedInventor: Robert Lloyd
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Publication number: 20110182796Abstract: The present invention relates to methods for the technical pyrolysis of a carbohydrate or carbohydrate mixture at an elevated temperature while adding silicon oxide, to a pyrolysis product obtainable in this way, and to the use thereof as a reducing agent for the production of solar silicon from silicic acid and carbon at a high temperature.Type: ApplicationFiled: September 28, 2009Publication date: July 28, 2011Inventors: Juergen Erwin Lang, Alfons Karl, Hartwig Rauleder, Ekkehard Mueh, Guido Stochniol
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Publication number: 20110176984Abstract: A method for preparation of high purity silicon suitable for photovoltaic cells using reduction of silica, which is pre-purified in an aqueous solution, in presence of a reducing agent, preferably carbonaceous agent, where the pre-purified silica has a low amount of boron suitable for photovoltaic cells is described.Type: ApplicationFiled: March 7, 2011Publication date: July 21, 2011Inventor: Steven C. Amendola
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Publication number: 20110176986Abstract: The present invention relates to a method and equipment for production of high purity silicon by reduction of SiCl4 with molten Zn metal. The method is characterized in that the reduction takes place in contact with a molten salt that dissolves ZnCl2. The ZnCl2 produced during the reduction then dissolves in the molten salt rather than evaporates. The advantage is that gas evolution during the reduction is minimised, leading to higher utilisation of the SiCl4 and Zn and thereby a higher Si yield. Another advantage is that the molten salt efficiently protects the air sensitive materials, Zn, SiCl4 and Si, from oxidation during the reduction. The resulting molten salt containing the ZnCl2 can be used for electrolysis of ZnCl2 to regenerate the Zn metal. Chlorine evolved during the electrolysis can be used to produce SiCl4.Type: ApplicationFiled: March 14, 2008Publication date: July 21, 2011Inventor: Christian Rosenkilde
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Patent number: 7972584Abstract: Magnesiothermic methods of producing solid silicon are provided. In a first embodiment, solid silica and magnesium gas are reacted at a temperature from 400° C. to 1000° C. to produce solid silicon and solid magnesium oxide, the silicon having a purity from 98.0 to 99.9999%. The silicon is separated from the magnesium oxide using an electrostatic technology. In a second embodiment, the solid silicon is reacted with magnesium gas to produce solid magnesium silicide. The magnesium silicide is contacted with hydrogen chloride gas or hydrochloric acid to produce silane gas. The silane gas is thermally decomposed to produce solid silicon and hydrogen gas, the silicon having a purity of at least 99.9999%. The solid silicon and hydrogen gas are separated into two processing streams. The hydrogen gas is recycled for reaction with chlorine gas to produce hydrogen chloride gas.Type: GrantFiled: August 25, 2009Date of Patent: July 5, 2011Assignee: Orion Laboratories, LLCInventor: James G. Blencoe
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Publication number: 20110158885Abstract: An object of the present invention is to provide more inexpensive high purity crystalline silicon which can satisfy not only a quality required to a raw material of silicon for a solar cell but also a part of a quality required to silicon for an up-to-date semiconductor and a production process for the same and provide high purity silicon tetrachloride used for production of high purity crystalline silicon and a production process for the same. The high purity crystalline silicon of the present invention has a boron content of 0.015 ppmw or less and a zinc content of 50 to 1000 ppbw. The production process for high purity crystalline silicon according to the present invention is characterized by that a silicon tetrachloride gas and a zinc gas are supplied to a vertical reactor to react them at 800 to 1200° C.Type: ApplicationFiled: September 4, 2009Publication date: June 30, 2011Applicants: Chisso Corporation, JX Nippon Mining & Metals Corporation, Toho Titanium Co., Ltd.Inventors: Satoshi Hayashida, Wataru Kato
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Patent number: 7964172Abstract: A method for synthesis of high surface-area (>100 m2/g) and nanosized (?100 nm) silicon powder by initiation of self-sustained combustion reaction in a mixture of silicon dioxide and magnesium powders in a sealed reactor chamber under pressurized inert gas atmosphere. A specific feature of the method is rapid cooling of the product at a rate of 100 K/s to 400 K/s in the area directly behind the combustion front.Type: GrantFiled: October 13, 2009Date of Patent: June 21, 2011Inventors: Alexander Mukasyan, Vasiliy Mukasyan, Mikael Nersesyan
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Patent number: 7955582Abstract: A method for producing crystallized silicon according to the EFG process by using a shaping part, between which part and a silicon melt, crystallized silicon grows in a growth zone. Inert gas and at least water vapor are fed into the silicon melt and/or growth zone, by means of which the oxygen content of the crystallized silicon is increased. From 50 to 250 ppm of vapor water is added to the inert gas, and the inert gas has an oxygen, CO and/or CO2 content of less than 20 ppm total.Type: GrantFiled: December 14, 2007Date of Patent: June 7, 2011Assignee: Schott Solar GmbHInventors: Albrecht Seidl, Ingo Schwirtlich
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Patent number: 7943109Abstract: The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.Type: GrantFiled: March 24, 2006Date of Patent: May 17, 2011Assignee: UmicoreInventors: Eric Robert, Tjakko Zijlema
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Patent number: 7939173Abstract: The invention relates to a polysilicon rod for FZ applications obtainable by deposition of high-purity silicon from a silicon-containing reaction gas, which has been thermally decomposed or reduced by hydrogen, on a filament rod. The polysilicon rod contains, surrounding the filament rod, an inner zone having but few needle crystals, small in size, an outer zone having a relatively small amount of larger needle crystals, and a smooth transition zone between the inner and outer zones. The polysilicon rods are obtained in high yield and can be refined in one pass in an FZ process.Type: GrantFiled: May 13, 2008Date of Patent: May 10, 2011Assignee: Wacker Chemie AGInventors: Mikhail Sofin, Hans-Christof Freiheit, Heinz Kraus
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Patent number: 7935327Abstract: A fluidized bed reactor and a Siemens reactor are used to produce polycrystalline silicon. The process includes feeding the vent gas from the Siemens reactor as a feed gas to the fluidized bed reactor.Type: GrantFiled: August 30, 2006Date of Patent: May 3, 2011Assignee: Hemlock Semiconductor CorporationInventors: Arvid Neil Arvidson, Michael Molnar