Abstract: A method for removing gas components SOx, NOx, and CO2 from a flue gas, comprises the steps of contacting the flue gas successively with first, second and third liquid mediums each of which provides a plasma containing reactive electrons or ions in an amount such that the gas molecules SOx, NOx, and CO2 are successively subjected to impingement of the electrons or ions in the respective plasma to enable the dissociation of the gas molecules SOx, NOx, and CO2 so as to remove SOx, NOx, and CO2 from the flue gas. A system for removing gas components SOx, NOx, and CO2 from a flue gas is also disclosed.

Abstract: A method for producing a catalyst using an additive layer method includes: (i) forming a layer of a powdered catalyst or catalyst support material, (ii) binding or fusing the powder in said layer according to a predetermined pattern, (iii) repeating (i) and (ii) layer upon layer to form a shaped unit, and (iv) optionally applying a catalytic material to said shaped unit.

Abstract: A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1,000° C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder.

Abstract: The present invention relates to a method for crystallizing ammonium dinitramide (ADN), through spontaneous nucleation and crystal growth, from a solution containing said ammonium dinitramide (AND) dissolved in a solvent. Said solvent characteristically has a viscosity greater than or equal to 0.25 Pa s (250 cP) when said spontaneous nucleation is implemented. The ADN crystals obtained by said method have a median shape factor of 1 to 1.5 and are perfectly suitable for placement in the composition of energy materials.

Abstract: A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.

Abstract: Method for concentrating nitrogen isotope to obtain a final product nitrogen, in which the stable nitrogen isotope, 15N, is concentrated, by low-temperature distillation of raw material nitrogen containing trace amounts of oxygen and argon using a plurality of distillation columns in a cascade arrangement. An argon-oxygen mixture is discharged from the bottom of the final column and 15N-concentrated nitrogen is extracted from a lower intermediate point of the final column. The flow rate of the argon-oxygen mixture discharged from the bottom of the final column is controlled based on the reading of a thermometer installed below the point where the final product 15N-concentrated nitrogen is extracted, thereby providing a stable nitrogen product.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A hot oxygen stream containing radicals is fed into a gas stream, such as a catalyst regenerator flue gas stream, that contains carbon monoxide to convert carbon monoxide to carbon dioxide.

Abstract: By a method and a device for preventing corrosion on and in the region of a gas inlet nozzle during nitric acid condensation, contact of the condensing gas with the nozzle and with the surroundings of the nozzle are supposed to be minimized. This is achieved in that the gas inlet nozzle has a sleeve on the inside in the transition region to the interior of the condenser, by which sleeve a gas inlet orifice in the form of an annular gap is formed, whereby the annular space is provided with at least one feed opening for secondary air, so that an enveloping flow of secondary air is produced around the entering NO gas.

Abstract: Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.

Abstract: The present invention discloses a method of synthesizing transition metal nitride by using supercritical ammonia. Transition metal nitride such as vanadium nitride, molybdenum nitride, titanium nitride, nickel nitride, neodymium nitride, iron nitride, etc. can be synthesized in supercritical ammonia with reducing mineralizers such as potassium, sodium, lithium, magnesium, calcium, and aluminum. Since supercritical ammonia has characteristics of both gas and liquid, it can over complicated fine structure or fine particles. The new method is suitable for forming a protective coating on complicated structure or forming micro- to nano-sized particles.

Abstract: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.

Abstract: Chemical processes and reactors for efficiently producing hydrogen fuels and structural materials and associated systems and methods. A representative process includes dissociating a hydrogen donor into dissociation products by adding energy to the hydrogen donor, wherein the energy includes waste heat generated by a process other than dissociating the hydrogen donor. The process can further include providing, from the dissociation products, a structural building block and/or a hydrogen-based fuel, with the structural building block based on carbon, nitrogen, boron, silicon, sulfur, and/or a transition metal.

Abstract: The present invention relates to application of catalysts for the Selective Catalytic Reduction of oxides of Nitrogen using N-containing reductant. The catalysts are characterised as phase pure lattice oxide materials into which catalytically active cations are incorporated at high levels of dispersion such that conventional analysis reveals a highly phase pure material. The materials are further characterised by high activity, hydrothermal durability and poison tolerance in the intended application.

Abstract: Compositions to generate nitrogenous gas, with a low decomposition temperature, and processes for the generation of nitrogenous gas comprising the decomposition of such compositions, are provided. The compositions include azodicarbonamide, a nitrogenous reducing charge, and at least one additive. The azodicarbonamide and the nitrogenous reducing charge represent at least 90% of their weight. The nitrogenous reducing charge includes at least one compound from a first family of reducing components chosen from tetrazole, tetrazole derivatives and their salts, salts of bitetrazole and of its derivatives, 5,5?-azobitetrazole salts, polyvinyltetrazoles and their mixtures; and/or at least one compound from a second family of reducing components chosen from dicyandiamide, 1-hydrobenzotriazole, silicon nitride, nitroguanidine, guanidine nitrate and their mixtures. a nitrogenous reducing charge and azodicarbonamide.

Abstract: Disclosed is a crystal growing apparatus, which is useful when growing a nitride semiconductor crystal by means of hydride vapor phase deposition, and which is capable of effectively preventing a reaction tube from breaking, and is capable of growing the high quality nitride semiconductor single crystal. Also disclosed are a method for manufacturing the nitride compound semiconductor crystal using such crystal growing apparatus, and the nitride compound semiconductor crystal. In the horizontal-type crystal growing apparatus for growing the nitride compound semiconductor crystal on a base substrate using the hydride vapor phase deposition, between the reaction tube (11) end portion (upstream flange (11a)) on the side where raw material gas supply tubes (14, 15) are disposed, and a base substrate disposing position (substrate holder (13)), a plurality of partitioning plates (20) that partition the reaction tube in the axis direction are provided.

Abstract: The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours.

Abstract: The emission of volatile organic compounds from apparatus for reclaiming used oils is controlled. Both the apparatus for reclaiming the used oils and the apparatus configured to control the emission of volatile organic compounds that are released at the reclaiming apparatus can be located on an over-the-road vehicle. The apparatus for reclaiming the used oils can be configured to be operatively associated with an electric transformer for reclaiming used oils in the transformer. The volatile organic compounds released in the apparatus for reclaiming used oils can first be heated and thereafter passed through a catalytic oxidizer in the apparatus configured to control the emission of volatile organic compounds, and the volatile organic compounds converted to gaseous products that are free of volatile organic compounds to a selected degree.

Abstract: A method for preparing a phosphor includes: dissolving at least one metal as a raw material of a desired phosphor in liquid ammonia to form a metal-amide type precursor; gathering the metal-amide type precursor; and firing the precursor to form a desired phosphor.

Abstract: The invention relates to a process for converting ammonium formed in a hydroxylamine phosphate oxime process into molecular nitrogen in an ammonium destruction zone, comprising—preparing a vapour stream comprising nitrogen oxide from ammonia, in an ammonia combustion zone;—bringing into contact by feeding to the ammonium destruction zone, individually and/or as pre-mixed combinations, at least part of said vapour stream, and a first liquid stream, comprising ammonium formed in the hydroxylamine phosphate oxime process, and a second liquid stream, comprising at least one acid selected from nitric acid and nitrous acid in a total nitric+nitrous acid concentration of at least 30 wt. %, thereby forming in the ammonium destruction zone a fluid mixture; and—reacting ammonium ions in the fluid mixture with nitrogen oxide under formation of molecular nitrogen, in the ammonium destruction zone. The invention further relates to an installation for converting ammonium formed in a hydroxylamine phosphate oxime process.

Abstract: By a method and a device for preventing corrosion on and in the region of a gas inlet nozzle during nitric acid condensation, contact of the condensing gas with the nozzle and with the surroundings of the nozzle are supposed to be minimized. This is achieved in that the gas inlet nozzle has a sleeve on the inside in the transition region to the interior of the condenser, by which sleeve a gas inlet orifice in the form of an annular gap is formed, whereby the annular space is provided with at least one feed opening for secondary air, so that an enveloping flow of secondary air is produced around the entering NO gas.

Abstract: The present invention provides a high surface area porous carbon material and a process for making this material. In particular, the carbon material is derived from biomass and has large mesopore and micropore surfaces that promote improved adsorption of materials and gas storage capabilities.

Abstract: A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 ?m; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

Abstract: A nitride-based compound semiconductor includes an atom of at least one group-III element selected from the group consisting of Al, Ga, In, and B, a nitrogen atom, and a metal atom that forms a compound by bonding with an interstitial atom of the at least one group-III element. The metal atom is preferably iron or nickel, A doping concentration of the metal atom is preferably equal to a concentration of the interstitial atom of the at least one group-III element.

Abstract: The invention relates to systems and methods for heating a solid or liquid reducing material such as an urea-containing material for NOx selective catalytic reduction (‘SCR’) using a heat stored in a thermal energy storage material, such as a phase change material. The stored heat may be heat from an exhaust waste, such as from an exhaust gas of an internal combustion engine. The reducing material may be a solid reducing material. Other reducing materials include aqueous solutions such as an aqueous solution containing, consisting essentially of, or consisting of urea and water. In one aspect, the process may include a step of evaporating an aqueous solution of urea for immediate urea hydrolysis.

Abstract: The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art. The composition of the new Zn-(II)-III-N compound semiconductor material can be controlled in order to tailor its band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.

Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.

Abstract: A method of processing a stream of liquid chlorine containing nitrogen trichloride from a chloralkali plant. The liquid stream is received into a vaporizer in which it is evaporated 1O1 chlorine gas and nitrogen trichloride gas. The gas stream is processed by destroying the nitrogen trichloride gas, for example in a superheater or a catalytic bed. The processed gas stream is recycled to the chlorine production train of the chloralkali plant. The process avoids the use of organic solvents to decompose the nitrogen trichloride and the creation of a waste stream requiring further handling.

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Abstract: An apparatus for providing a reactant comprises a reactant space and a reservoir space. The reactant space comprises a chemical complex capable of evolving the reactant when heated. The reservoir space, in turn, is in gas communication with the reactant space. The apparatus is operative to heat the chemical complex when a pressure of the reactant in the reservoir space is below a predetermined set-point, and to cool the chemical complex when the pressure of the reactant in the reservoir space is above the predetermined set-point.

Abstract: A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAlxNy material at least partially contiguous with the semiconductor structure. The TiAlxNy material can be TiAl3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAlxNy material, such that the TiAlxNy material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.

Abstract: Methods of using an adsorption medium to remove at least one constituent from a feed stream. The method comprises contacting an adsorption medium with a feed stream comprising at least one constituent and removing the at least one constituent from the feed stream. The adsorption medium comprises a polyacrylonitrile (PAN) matrix and at least one metal hydroxide homogenously dispersed therein. The adsorption medium may comprise from approximately 15 wt % to approximately 90 wt % of the PAN and from approximately 10 wt % to approximately 85 wt % of the at least one metal hydroxide. The at least one metal hydroxide may be selected from the group consisting of ferric hydroxide, zirconium hydroxide, lanthanum hydroxide, cerium hydroxide, titanium hydroxide, copper hydroxide, antimony hydroxide, and molybdenum hydroxide.

Abstract: A large area nitride crystal, comprising gallium and nitrogen, with a non-polar or semi-polar large-area face, is disclosed, along with a method of manufacture. The crystal is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

Abstract: The present invention provides a photoreactive reagent that binds specifically to Ca2+-binding proteins, links to them covalently after photo-activation, and labels them. The novel reagent enables the characterization, purification, inhibition and screening of Ca2+-binding proteins, as well as the preparation of a new affinity chromatography matrix and a new protein biosensor. The invention also relates to the use of the reagent in inhibiting apoptosis and necrosis and in diagnosing a disorder associated with a defect in the function of a Ca2+-binding protein, and in the preparation of a medicament for treating such disorders.

Abstract: A method for decomposing N2O is described. The method uses, as a catalyst, an oxide based on cerium and lanthanum, which further includes at least one oxide of an element chosen from zirconium and rare earths other than cerium and lanthanum. This catalyst is stable, enabling it to be used at high temperatures.

Abstract: A bioreactor designed to produce N2O from organic nitrogen and/or reactive nitrogen in waste is coupled to a hardware reactor device in which the N2O is consumed in a gas phase chemical reaction, e.g., catalytic decomposition to form oxygen and nitrogen gas. Heat from the exothermic reaction may be used to generate power. The N2O may alternatively be used as an oxidant or co-oxidant in a combustion reaction, e.g., in the combustion of methane. The bioreactor may have various designs including a two-stage bioreactor, a hollow-fiber membrane bioreactor, or a sequencing batch reactor. The bioreactor may involve Fe(II)-mediated reduction of nitrite to nitrous oxide.

Abstract: A process has been developed to selectively dissociate target molecules into component products compositionally distinct from the target molecule, wherein the bonds of the target molecule do not reform because the components are no longer reactive with each other. Dissociation is affected by treating the target molecule with light at a frequency and intensity, alone or in combination with a catalyst in an amount effective to selectively break bonds within the target molecule. Dissociation does not result in re-association into the target molecule by the reverse process, and does not produce component products which have a change in oxidation number or state incorporated oxygen or other additives because the process does not proceed via a typical reduction-oxidation mechanism. Target molecules include ammonia for waste reclamation and treatment, PCB remediation, and targeted drug delivery.

Abstract: An advanced method for processing a solid feedstock such as coal and a liquid feedstock such as bitumen wherein gases produced from such fossil fuel feedstocks are divided in a way as to polygenerate various by-products which includes the conversion of a waste gas (flue gas) containing nitrogen (N2) and carbon dioxide (CO2) generated from the combustion of said gases to produce an intermediate made of carbon (C) and nitrogen (N2) in the form of cyanogen which in turn is converted to a fertilizer such as oxamide. This approach obviates the necessity of CO2 capture and storage in a geologic formation. Besides the making of a fertilizer from a waste gas containing N2 and CO2, the other by-products can be power in the form of electricity and/or steam from a lean gas and liquid transportation fuel like methanol/gasoline, or chemicals from a hydrogen rich gas. The method is applicable to utility as well as to industry.

Abstract: The present invention relates to a catalyst for removing NOx contained in exhaust gas, more specifically to a catalyst for removing NOx using metal titanate as a support. The catalyst for removing NOx according to the present invention allows metal titanate to act as a support as well as an adsorption and storage agent (hereafter an adsorption/storage agent) of NOx in lean-burn conditions. Supported noble metals or transition metal components provide a catalyst function which helps adsorption/storage by oxidizing NOx into NO2 in lean-burn conditions and participates in the reaction of reducing the adsorbed and stored NO2 into N2 in fuel-rich conditions. The catalyst according to the present invention has twice the NOx storage amount of conventional catalysts, for example Ba, and enables effective removal even in operational conditions of a wider range than 150˜700° C.

Abstract: An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

Abstract: This invention relates to a new method for the production of nitride-based phosphors, in particular, of phosphors containing rare earth elements. The phosphors can be used, for example, in light sources, especially in Light Emitting Devices (LEDs).

Abstract: Compositions and methods are directed to antimicrobial compositions and articles that release ?NO from the composition and/or article in an amount effective to prevent gingival and other oral mucosal diseases.

Abstract: An isotope-doped nano-structure of an element is provided. The isotope-doped nano-structure includes at least one isotope-doped nano-structure segment having at least two isotopes of the element, and the at least two isotopes of the element are mixed uniformly in a certain proportion. The present disclosure also provides a method for making the isotope-doped nano-structures, and a labeling method using the isotope-doped nano-structures.

Abstract: Disclosed is a catalyst composition for reducing NOx through two steps including reacting NOx with H2 thus producing ammonia which is then reacted with NOx, instead of direct NOx reduction by H2, and a method of reducing NOx using the catalyst composition.

Abstract: The present invention relates to a porous metal organic framework comprising at least one first organic compound and ions of at least one metal, with the skeleton of the framework being formed at least partly by the at least one first organic compound coordinating at least partly in a bidentate fashion to at least two ions of the at least one metal, where the at least one metal is lithium and the at least one first compound is derived from formic acid or acetic acid. The invention additionally relates to a process for preparing it and also its use for gas storage or separation.

Abstract: A process for the preparation of a copper containing zeolitic material having CHA framework structure and a composition comprising the molar ratio (n YO2):X2O3 wherein X is a trivalent element, preferably Al, Y is a tetravalent element, preferably Si, and wherein n is preferably at least 20, the process comprising the preparation of an phosphor-free aqueous solution containing at least one source for X2O3 and at least one source for YO2, at least one structure directing agent suitable for the preparation of a zeolitic material having CHA framework structure, and at least one Cu source, and the process further comprising the hydrothermal crystallization of said aqueous solution obtaining a suspension containing the copper containing zeolitic material having CHA framework structure.

Abstract: A method of depositing a material on a substrate comprises placing a substrate into a process space in fluidic communication with a Gaede pump stage (GPS). A precursor gas is then injected into the process space while injecting a draw gas at a draw gas flow rate into the GPS such that the injected precursor gas achieves a precursor pressure and a precursor gas flow rate in the process space. Subsequently, substantially all of the precursor gas remaining in the process space is swept from the process space by injecting a sweep gas into the process space such that the injected sweep gas achieves a sweep pressure and sweep gas flow rate in the process space. The precursor pressure is higher than the sweep pressure, and the precursor gas flow rate is lower than the sweep gas flow rate.

Abstract: Methods for the production of a blue light emitting nanomaterial are provided comprising nitriding Group 13 metals to produce nitrided Group 13 metals and doping the nitrided Group 13 metals with a dopant, particularly an M2+ dopant, such as Mg2+ or Zn2+, to produce doped nanoparticles. Blue light emitting nanocomposites on other materials, such as SiO2 or TiO2, are also provided. Blue light emitting nanomaterials and nanocomposites also can be coupled to photonic crystals. Nanocrystal-based electroluminescence device are also disclosed.

Abstract: A process for obtaining a synthesis gas (GS) at a predetermined high pressure corresponding to the ammonia synthesis pressure, in which there are hydrogen and nitrogen in a 3/1 molar ratio, comprising the steps of feeding a continuous flow of natural gas to a primary reforming step (RP) with steam and to a subsequent secondary reforming step (RS) with excess air obtaining a gaseous flow (GF) comprises hydrogen, excess nitrogen with respect to said molar ratio, undesired substances such as impurities and inerts and subjects said gaseous flow to a purification step comprising cryogenic rectification in a separator unit (S) obtaining a continuous flow of synthesis gas (GS) comprising hydrogen and nitrogen in a 3/1 molar ratio, and to a subsequent compression step up to a pressure value required for ammonia synthesis.

Abstract: The invention relates to a device for producing CO2, N2 and/or SO2 from a sample for a quantitative analysis of the sample, comprising a reactor structure and metals acting in an oxidizing manner or metal oxides in the reactor. According to the invention, the reactor structure has at least two zones through which the sample can flow, which is to say a first zone with reactor metal and reservoir metal, or only reactor metal, and following the first zone, a second zone with reactor metal and reservoir metal, or only reservoir metal, wherein both metals can form oxides, and wherein the ratio of the reactor metal to the reservoir metal in the first zone is greater than in the second zone.