Abstract: Disclosed herein is an apparatus and method for growing a diamond. The apparatus for growing a diamond comprises: a reaction cell that is configured to grow the diamond therein; a main heater including a main heating surface that is arranged along a first inner surface of the reaction cell; and a sub-heater including a sub-heating surface that is arranged along a second inner surface of the reaction cell, the second inner surface being non-parallel with the first inner surface.

Abstract: PCD materials comprise a diamond body having bonded diamond crystals and interstitial regions disposed among the crystals. The diamond body is formed from diamond grains and a catalyst material at high pressure/high temperature conditions. The diamond grains have an average particle size of about 0.03 mm or greater. At least a portion of the diamond body has a high diamond volume content of greater than about 93 percent by volume. The entire diamond body can comprise high volume content diamond or a region of the diamond body can comprise the high volume content diamond. The diamond body includes a working surface, a first region substantially free of the catalyst material, and a second region that includes the catalyst material. At least a portion of the first region extends from the working surface to depth of from about 0.01 to about 0.1 mm.

Abstract: Polycrystalline diamond includes cubic diamond and hexagonal diamond, and a ratio of X-ray diffraction peak intensity of a (100) plane of the hexagonal diamond to X-ray diffraction peak intensity for a (111) plane of cubic diamond is not lower than 0.01%. In addition, a present method of manufacturing polycrystalline diamond includes the steps of preparing a non-diamond carbon material having a degree of graphitization not higher than 0.58 and directly converting the non-diamond carbon material to cubic diamond and hexagonal diamond and sintering the non-diamond carbon material, without adding any of a sintering agent and a binder, under pressure and temperature conditions at which diamond is thermodynamically stable.

Abstract: A carbonaceous substrate of the present invention is such that an X-ray diffraction pattern thereof is a complex profile and includes at least two (002) diffraction lines; and the substrates contains crystallites with different interlayer spacings. Further, in the X-ray diffraction pattern, (002) diffraction lines between 2?=10° and 2?=30° have an asymmetric shape; and the X-ray diffraction pattern includes at least two pattern components which are a diffraction line whose center is at 2?=26° and a diffraction line whose center is at a lower angle than 2?=26°. Further, the carbonaceous substrate contains crystals wherein the periodic distance d002 is 0.34 nm or more and the crystallite size Lc002 is 20 nm or less based on the X-ray diffraction lines. An electrodes for fluorine electrolysis of the present invention includes the carbonaceous substrate on which a conductive diamond thin film is formed.

Abstract: Systems and methods of producing chemical compounds are disclosed. An example chemical production system includes a combustion chamber having intake ports for entry of a gas mixture. An igniter ignites the gas mixture in the intake chamber to facilitate a reaction at a high temperature and high pressure. A nozzle restricts exit of the ignited gas mixture from the combustion chamber. An expansion chamber cools the ignited gas. The expansion chamber has an exhaust where the cooled gas exits the expansion chamber. A chemical compound product is formed in the expansion chamber.

Abstract: The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost.

Abstract: The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost.

Abstract: A method of growing a diamond mass in a liquid growth medium. The liquid growth medium can include a carbon source, a diamond growth catalyst such as a diamond catalyst metal-rare earth element alloy or nanocatalyst, and a dissociated hydrogen of a hydrogen source. The carbon source provides carbon atoms for growing diamond and can include a diamond seed material for diamond growth. The molten liquid phase provides a diamond growth catalyst which allows the carbon to form diamond at the temperature and low pressure conditions discussed. Furthermore, the dissociated hydrogen acts as a concentrator for assembling carbon atoms at a relatively high concentration which mimicks, in some respects, diamond growth under more conventional high pressure processes without the high pressure.

Abstract: The present invention provides an enhanced plating for electro and electroless plating. There is provided a method of plating a surface to be plated, the method comprises premixing a plating solution with additive. The additive comprises diamond particles is also provided.

Abstract: The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a ?(3) nonlinear crystalline material for Raman laser converters comprising single crystal diamond.

Abstract: The invention provides methods and systems for producing large size diamonds. The methods include using carbon containing gases and supplementary gases to form reaction zones that are suitable for diamonds to grow; controlling the temperatures that are suitable for diamonds to grow; and keeping the small size seeds in motion in the reaction zones to form large size diamonds. The method provides controlling the high temperature endurable small size seeds at suitable temperatures for diamonds to grow and keep them in motion in the reaction zones. The invention also provides systems that allow all the surfaces of the high temperature endurable small size seeds continually extend to form diamonds, then to form large size diamonds. The invention provides a large-scale, low cost production of large size diamonds.

Abstract: A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer.

Abstract: A diamond sintered body conventionally used in a cutting tool or the like includes an iron group metal element as a sintering aid, and therefore has a problem in heat resistance. A diamond sintered body not including the iron group metal, on the other hand, does not have sufficient mechanical strength to be used as a tool material, and also does not have conductivity, which makes electrical discharge machining impossible, and thus processing thereof is difficult. A diamond polycrystalline body having high heat resistance and mechanical strength and having conductivity enabling electrical discharge machining is obtained by using only an amorphous or fine graphite-type carbon material as a starting material, adding boron thereto and concurrently performing conversion into diamond and sintering in an ultra-high pressure and temperature condition.

Abstract: A method of incorporating a mark of origin, such as a brand mark, or fingerprint in a CVD single crystal diamond material, includes the steps of providing a diamond substrate, providing a source gas, dissociating the source gas thereby allowing homoepitaxial diamond growth, and introducing in a controlled manner a dopant into the source gas in order to produce the mark of origin or fingerprint in the synthetic diamond material. The dopant is selected such that the mark of origin or fingerprint is not readily detectable or does not affect the perceived quality of the diamond material under normal viewing conditions, but which mark of origin or fingerprint is detectable or rendered detectable under specialised conditions, such as when exposed to light or radiation of a specified wavelength, for example. Detection of the mark of origin or fingerprint may be visual detection or detection using specific optical instrumentation, for example.

Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.

Abstract: A slurry containing a plurality of monocrystalline diamond particles, wherein the average surface roughness of said particles is less than about 0.95; a major vehicle selected from the group of water-based vehicles, glycol-based vehicles, oil-based vehicles or hydrocarbon-based vehicles and combinations thereof; and one or more optional additives.

Abstract: An aqueous suspension liquid of finely divided diamond particles comprising 0.05 to 160 parts by weight of a finely divided diamond particles in 1000 parts of water, wherein; (i) the finely divided diamond particles have an element composition consisting mainly of 72 to 89.5% by weight of carbon, 0.8 to 1.5% of hydrogen, 1.5 to 2.5% of nitrogen, and 10.5 to 25.0% of oxygen; (ii) and, almost all of said diamond particles are in the range of 2 mu to 50 nm in diameters thereof (80% or more by number average, 70% or more by weight average), (iii) and, said finely divided diamond particles exhibit a strongest peak of the intensity of the Bragg angle at 43.9° (20±20), strong and characteristic peaks at 73.5° (20±20) and 95° (20±2°), a warped halo at 17? (20±2?), and no peak at 26.5°, by X-ray diffraction (XRD) spectrum analysis using Cu-Ku radiation when dried, (iv) and, specific surface area of said diamond particles when dry state powder is not smaller than 1.

Abstract: A method of treating a diamond, the method comprising: (i) providing a liquid metal saturated with carbon with respect to graphite precipitation; (ii) lowering the temperature of the liquid metal such that the liquid metal is saturated with carbon with respect to diamond precipitation; (iii) immersing a diamond in the liquid metal; and (iv) removing the diamond from the metal.

Abstract: Embodiments of the invention relate to methods of fabricating polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding by carbon pumping, and PCD and polycrystalline diamond compacts formed by such methods. In an embodiment of a method of fabricating PCD, a plurality of diamond crystals and a metal-solvent catalyst may be provided. The diamond crystals and metal-solvent catalyst may be subjected to a first pressure-temperature condition during which carbon is dissolved in the metal-solvent catalyst. After subjecting the diamond crystals and metal-solvent catalyst to the first pressure-temperature condition, the diamond crystals and metal-solvent catalyst may be subjected to a second pressure-temperature condition at which diamond is stable.

Abstract: The present invention relates to a method for separating diamond from gangue minerals. In particular, this method relates to the addition of a first reagent or reagents which contact the diamond in diamond ore slurry to at least partially remove hydrophilic coatings from the diamond surfaces. A second reagent or reagents may also be added to the slurry so that the reagent may adsorb on the diamond surfaces and thereby enhance the hydrophobicity of diamonds. The increase in hydrophobicity may improve the flotation of diamonds.

Abstract: A laser has a laser material in thermal contact with a diamond, such that the diamond is operable to carry heat away from the laser material. In further embodiments, the diamond has a reduced nitrogen content, is a reduced carbon-13 content, is a monocrystalline or multilayer low-strain diamond, or has a thermal conductivity of greater than 2200 W/mK.

Abstract: Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system comprising such single crystal diamond are described.

Abstract: An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

Abstract: Disclosed is a combinatorial synthesis of Diamond wherein a first reactive species is produced by catalytic treatment of Acetylene, a second reactive species is produced by decomposition of a hydrocarbon source having a low Hydrogen-to-Carbon ratio using a high energy discharge, and the two reactive species so obtained are combined in the vapor phase to yield Diamond without the need of post-treatments. The reaction is efficient and affords Diamond under mild conditions with high purity such that it may be useful for producing Diamond for semiconductor and microelectronics applications.

Abstract: A method for producing a diamond material by contacting a fluorinated precursor with a hydrocarbon in a reactor and forming a combination in the absence of a metal catalyst; increasing the pressure of the reactor to a first pressure; heating the combination under pressure to form a material precursor; cooling the material precursor; and forming a diamond material.

Abstract: A method for changing the color of a diamond. The method comprises placing the diamond in a substrate holder in a chemical vapor deposition (CVD) equipment. The CVD equipment is maintained at pressures near or below atmospheric pressure. A mixture of gases including hydrogen is introduced inside the CVD equipment. The introduced mixture of gases is energized by using microwave radiation to heat the diamond to temperatures above 1400° C. Then, the diamond is maintained at temperatures above 1400° C. for few seconds to few hours.

Abstract: Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to an HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a PCD material includes a plurality of bonded diamond grains that exhibit a substantially unimodal diamond grain size distribution characterized, at least in part, by a parameter ? that is less than about 1.0. ? = x 6 · ? , where x is the average grain size of the substantially unimodal diamond grain size distribution, and ? is the standard deviation of the substantially unimodal diamond grain size distribution.

Abstract: The invention is related to a technique that grafts polymer onto a surface of nano-diamonds, and the invention further provides applications relating to modification and dispersion of the nano-diamonds. The features of the technique are single step, one pot, low cost, and high yield, and therefore the technique has high potential for commercialization. The invention also provides a method for graphitizing monocrystalline nano-diamonds and polycrystalline nano-diamonds. Accordingly, the technique of modifying and polymer grafting can be used not only on ultra disperse diamonds but also on monocrystalline nano-diamonds with graphitized surfaces and polycrystalline nano-diamonds with graphitized surfaces.

Abstract: A system and method for growing diamond crystals from diamond crystal seeds by epitaxial deposition at low temperatures and atmospheric and comparatively low pressures. A solvent is circulated (by thermal convection and/or pumping), wherein carbon is added in a hot leg, transfers to a cold leg having, in some embodiments, a range of progressively lowered temperatures and concentrations of carbon via the circulating solvent, and deposits layer-by-layer on diamond seeds located at the progressively lower temperatures since as diamond deposits the carbon concentration lowers and the temperature is lowered to keep the solvent supersaturated. The solvent includes metal(s) or compound(s) that have low melting temperatures and transfer carbon at comparatively low temperatures. A controller receives parameter signals from a variety of sensors located in the system, processes these signals, and optimizes diamond deposition by outputting the necessary control signals to a plurality of control devices (e.g.

Abstract: A hardfacing composition (32) that includes a plurality of hard particles (54) wherein the hard particles (54) include a mode particle size distribution, one particle size distribution smaller than the mode particle size distribution, and an other particle size distribution larger than the mode particle size distribution. There is an absence of any substantial fluctuations in the particle size distribution between the mode particle size distribution and the one particle size distribution. There is an absence of any substantial fluctuations in the particle size distribution between the mode particle size distribution and the other particle size distribution.

Abstract: A component that is subject to tribological wear comprises a nano diamond layer on the surface thereof.

Abstract: The present disclosure relates to methods for improving the quality of diamonds by eliminating internal defects, such as cracks and vacant volumes, without the use of filler materials such as glass, thereby improving the diamond's optical performance or appearance. More particularly, the disclosure relates to a method of curing defects in a genuine or synthetic diamond or other gemstone by using Atomic Layer Deposition (“ALD”) processes to form atomic layers within vacant volumes or cracks in the diamond or gemstone. Alternatively, ALD may be used to form crystalline layers of a new diamond or other gemstone.

Abstract: The invention relates to single crystal diamond with optical quality and methods of making the same. The diamond possesses an intensity ratio of the second-order. Raman peak to the fluorescence background of around 5 or greater.

Abstract: Embodiments relate to methods of fabricating PCD materials by subjecting a mixture that exhibits a broad diamond particle size distribution to a HPHT process, PCD materials so-formed, and PDCs including a polycrystalline diamond table comprising such PCD materials. In an embodiment, a method includes subjecting a mixture to heat and pressure sufficient to form a PCD material. The mixture comprises a plurality of diamond particles exhibiting a diamond particle size distribution characterized, in part, by a parameter ? that is less than about 1.0, where ? = x 6 · ? , x is the average particle size of the diamond particle size distribution, and ? is the standard deviation of the diamond particle size distribution.

Abstract: Partially or fully saturated doped graphene materials are found to be superconducting. The saturation is with hydrogen or halogen. Doping is performed by substitution of carbon atoms or by applying an electric field. Diamond nano-rods are also found to be superconducting. These materials can be used in electronic devices having a gate.

Abstract: The present invention is to provide a diamond sintered compact having good conductivity together with the characteristics, such as hardness, thermal conductivity, thermal resistance, chemical stability, almost equal to those of a natural diamond. A boron-doped diamond sintered compact having good conductivity and high thermal resistance is produced by a sintering process, in which 90 to 99.9 wt. % of a boron-doped diamond powder and 0.1 to 10% wt. % of a powder comprising, one or more of carbonates including Mg, Ca, Sr or Ba, and/or one or more of composite carbonates composed by two or more of these elements, as a bonding phase component, are sintered together under Ht/HP conditions, and the bonding phase component melts and then fills into the space between the boron-doped diamond powder particles.

Abstract: Methods of fabricating polycrystalline diamond elements and compacts using sp2-carbon-containing particles are disclosed. In an embodiment, a method of fabricating a polycrystalline diamond element includes mixing a plurality of sp2-carbon-containing particles and a plurality of diamond particles to form a mixture. An amount of the plurality of sp2-carbon-containing particles present in the mixture is effective to increase a thermal stability of the polycrystalline diamond element formed at least partially from the mixture. The method further includes sintering the mixture in the presence of a catalyst material to form the polycrystalline diamond element.

Abstract: A method for rapidly synthesizing polycrystalline diamond, includes the steps of machining a large monolithic graphite piece, placing the starting graphite piece in direct contact with an activator piece composed of a nickel-base alloy, and subjecting the contacting pieces to high static pressure and high temperature for a time sufficient to cause the starting monolithic graphite piece to undergo complete transformation into diamond to yield monolithic polycrystalline diamond.

Abstract: The present invention relates to a method for separating diamond from gangue minerals. In particular, this method relates to the addition of a first reagent or reagents which contact the diamond in diamond ore slurry to at least partially remove hydrophilic coatings from the diamond surfaces. A second reagent or reagents may also be added to the slurry so that the reagent may adsorb on the diamond surfaces and thereby enhance the hydrophobicity of diamonds. The increase in hydrophobicity may improve the flotation of diamonds.

Abstract: Disclosed is a carbon film which has optical characteristics of retaining a high transparency and being high in refractive index and low in double refractivity, is excellent in electric insulating performance, can be applied to various base materials with good adhesiveness, and can be formed at low temperature. Also disclosed is a laminate including a carbon film and a method for producing the laminate.

Abstract: Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is disclosed. In particular, a CVD single crystal diamond material having preferred characteristics of longest linear internal dimension, birefringence and absorption coefficient, when measured at room temperature, is disclosed. Uses of the diamond material, including in a Raman laser, and methods of producing the diamond are also disclosed.

Abstract: A method of synthesizing nanodiamonds. In one embodiment, the present invention provides a method of synthesizing nanodiamonds, which includes the step of subjecting an amount of tannin to a microwave radiation for a duration of time effective to produce a plurality of nanodiamonds.

Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.

Abstract: To provide a plasma CVD device capable of increasing voltage VDC that is a DC component generated at the electrode during high-frequency discharge in CVD deposition. The plasma CVD device according to the present invention includes a chamber 1, a holding electrode 2 disposed in the interior of the chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply 8 connected electrically with the holding electrode, a counter electrode 12 disposed opposite to the substrate on which a film is to be deposited held by the holding electrode and connected with an earth power supply or a float power supply, a raw material gas supply mechanism for supplying a raw material gas into a space 13 between the counter electrode and the holding electrode, and an evacuation mechanism for evacuating the interior of the chamber, wherein the surface area “a” of the holding electrode and the surface area “b” of the counter electrode satisfy a formula below, b/a?2.

Abstract: A method of producing a grown single crystal diamond substrate comprising: (a) providing a first diamond substrate which presents a (001) major surface, which major surface is bounded by at least one <100> edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one <100> edge by a ratio of at least 1.3:1; and (b) growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to the major (001) surface, and laterally therefrom.

Abstract: The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.

Abstract: A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt % additives; b) forming a work piece from the mixture using a pressure of at least 100 Mpa; c) heating the formed work piece to at least 300° C. for removing possible water and wholly or partially removing additives; d) heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamonds, wherein the amount of graphite created by graphitization is 3-50 wt % of the amount of diamond; e) infiltrating silicon or silicon alloy into the work piece.

Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.

Abstract: An aqueous suspension liquid of finely divided diamond particles comprising 0.05 to 160 parts by weight of a finely divided diamond particles in 1000 parts of water, wherein; (i) the finely divided diamond particles have an element composition consisting mainly of 72 to 89.5% by weight of carbon, 0.8 to 1.5% of hydrogen, 1.5 to 2.5% of nitrogen, and 10.5 to 25.0% of oxygen; (ii) and, almost all of said diamond particles are in the range of 2 nm to 50 nm in diameters thereof (80% or more by number average, 70% or more by weight average), (iii) and, said finely divided diamond particles exhibit a strongest peak of the intensity of the Bragg angle at 43.9° (2?±2°), strong and characteristic peaks at 73.5° (2?±2°) and 95° (2?±2°), a warped halo at 17° (2?±2°), and no peak at 26.5°, by X-ray diffraction (XRD) spectrum analysis using Cu—K? radiation when dried, (iv) and, specific surface area of said diamond particles when dry state powder is not smaller than 1.

Abstract: Proposed is a zirconium crucible used for melting an analytical sample in the pretreatment of the analytical sample, wherein the purity of the zirconium crucible is 99.99 wt % or higher. In light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, the present invention provides a zirconium crucible for melting an analytical sample, a method of preparing such analytical sample, and a method of analysis that enables the analysis of high purity materials by inhibiting the inclusion of impurities from the crucible regardless of difference in the analysts and their skill.