Diamond Patents (Class 423/446)
  • Patent number: 8021639
    Abstract: A method for rapidly synthesizing polycrystalline diamond, includes the steps of machining a large monolithic graphite piece, placing the starting graphite piece in direct contact with an activator piece composed of a nickel-base alloy, and subjecting the contacting pieces to high static pressure and high temperature for a time sufficient to cause the starting monolithic graphite piece to undergo complete transformation into diamond to yield monolithic polycrystalline diamond.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: September 20, 2011
    Assignee: Diamond Materials Inc.
    Inventors: Oleg A. Voronov, Bernard H. Kear
  • Patent number: 8007754
    Abstract: The present invention relates to a method for separating diamond from gangue minerals. In particular, this method relates to the addition of a first reagent or reagents which contact the diamond in diamond ore slurry to at least partially remove hydrophilic coatings from the diamond surfaces. A second reagent or reagents may also be added to the slurry so that the reagent may adsorb on the diamond surfaces and thereby enhance the hydrophobicity of diamonds. The increase in hydrophobicity may improve the flotation of diamonds.
    Type: Grant
    Filed: February 3, 2006
    Date of Patent: August 30, 2011
    Assignee: Mineral and Coal Technologies, Inc.
    Inventors: Roe Hoan Yoon, Dmitri Kouznetsov
  • Patent number: 8007909
    Abstract: Disclosed is a carbon film which has optical characteristics of retaining a high transparency and being high in refractive index and low in double refractivity, is excellent in electric insulating performance, can be applied to various base materials with good adhesiveness, and can be formed at low temperature. Also disclosed is a laminate including a carbon film and a method for producing the laminate.
    Type: Grant
    Filed: April 15, 2005
    Date of Patent: August 30, 2011
    Assignee: National Institute of Advanced Industrial Science & Technology
    Inventors: Yoshinori Koga, Masataka Hasegawa, Sumio Iijima, Kazuo Tsugawa, Masatou Ishihara
  • Publication number: 20110176563
    Abstract: Single crystal diamond material produced using chemical vapour deposition (CVD), and particularly diamond material having properties suitable for use in optical applications such as lasers, is disclosed. In particular, a CVD single crystal diamond material having preferred characteristics of longest linear internal dimension, birefringence and absorption coefficient, when measured at room temperature, is disclosed. Uses of the diamond material, including in a Raman laser, and methods of producing the diamond are also disclosed.
    Type: Application
    Filed: January 14, 2011
    Publication date: July 21, 2011
    Inventors: Ian Friel, Sarah Louise Geoghegan, Daniel James Twitchen, Joseph Michael Dodson
  • Publication number: 20110171108
    Abstract: A method of synthesizing nanodiamonds. In one embodiment, the present invention provides a method of synthesizing nanodiamonds, which includes the step of subjecting an amount of tannin to a microwave radiation for a duration of time effective to produce a plurality of nanodiamonds.
    Type: Application
    Filed: March 22, 2011
    Publication date: July 14, 2011
    Applicant: BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS
    Inventor: Tito Viswanathan
  • Patent number: 7976893
    Abstract: A heavily boron-doped diamond thin film having superconductivity is deposited by chemical vapor deposition using gas mixture of at least carbon compound and boron compound, including hydrogen. An advantage of the diamond thin film deposited by the chemical vapor deposition is that it can contain boron at high concentration, especially in (111) oriented films. The boron-doped diamond thin film deposited by the chemical vapor deposition shows the characteristics of typical type II superconductor.
    Type: Grant
    Filed: May 20, 2005
    Date of Patent: July 12, 2011
    Assignee: National Institute for Materials Science
    Inventors: Yoshihiko Takano, Masanori Nagao, Minoru Tachiki, Hiroshi Kawarada, Hitoshi Umezawa, Kensaku Kobayashi
  • Publication number: 20110165057
    Abstract: To provide a plasma CVD device capable of increasing voltage VDC that is a DC component generated at the electrode during high-frequency discharge in CVD deposition. The plasma CVD device according to the present invention includes a chamber 1, a holding electrode 2 disposed in the interior of the chamber and adapted for holding a substrate on which a film is to be deposited, a high frequency power supply 8 connected electrically with the holding electrode, a counter electrode 12 disposed opposite to the substrate on which a film is to be deposited held by the holding electrode and connected with an earth power supply or a float power supply, a raw material gas supply mechanism for supplying a raw material gas into a space 13 between the counter electrode and the holding electrode, and an evacuation mechanism for evacuating the interior of the chamber, wherein the surface area “a” of the holding electrode and the surface area “b” of the counter electrode satisfy a formula below, b/a?2.
    Type: Application
    Filed: June 30, 2009
    Publication date: July 7, 2011
    Inventors: Yuuji Honda, Takeharu Kawabe, Haruhito Hayakawa, Koji Abe
  • Publication number: 20110150745
    Abstract: A method of producing a grown single crystal diamond substrate comprising: (a) providing a first diamond substrate which presents a (001) major surface, which major surface is bounded by at least one <100> edge, the length of the said at least one <100> edge exceeding any dimension of the surface that is orthogonal to the said at least one <100> edge by a ratio of at least 1.3:1; and (b) growing diamond material homoepitaxially on the (001) major surface of the diamond material surface under chemical vapour deposition (CVD) synthesis conditions, the diamond material growing both normal to the major (001) surface, and laterally therefrom.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 23, 2011
    Inventors: Daniel James Twitchen, Harpreet Kaur Dhillon, Geoffrey Alan Scarsbrook
  • Publication number: 20110151226
    Abstract: The present disclosure relates to methods for synthesizing synthetic CVD diamond material and high quality synthetic CVD diamond materials.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 23, 2011
    Inventors: Daniel James Twitchen, Andrew Michael Bennett, Rizwan Uddin Ahmad Khan, Philip Maurice Martineau
  • Patent number: 7959887
    Abstract: A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt % additives; b) forming a work piece from the mixture using a pressure of at least 100 Mpa; c) heating the formed work piece to at least 300° C. for removing possible water and wholly or partially removing additives; d) heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamonds, wherein the amount of graphite created by graphitization is 3-50 wt % of the amount of diamond; e) infiltrating silicon or silicon alloy into the work piece.
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: June 14, 2011
    Assignee: Element Six Limited
    Inventors: Lena Svendsen, Jie Zheng, Fredrik Meurling, Tomas Rostvall
  • Publication number: 20110126759
    Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.
    Type: Application
    Filed: January 28, 2011
    Publication date: June 2, 2011
    Applicant: THE GEMESIS CORPORATION
    Inventors: Robert CHODELKA, Hexiang ZHU, Alexander NOVIKOV
  • Patent number: 7927879
    Abstract: Proposed is a zirconium crucible used for melting an analytical sample in the pretreatment of the analytical sample, wherein the purity of the zirconium crucible is 99.99 wt % or higher. In light of the recent analytical technology demanded of fast and accurate measurement of high purity materials, the present invention provides a zirconium crucible for melting an analytical sample, a method of preparing such analytical sample, and a method of analysis that enables the analysis of high purity materials by inhibiting the inclusion of impurities from the crucible regardless of difference in the analysts and their skill.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: April 19, 2011
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Masahiro Sakaguchi, Mitsuru Yamaguchi, Tomio Takahashi, Kouichi Takemoto
  • Patent number: 7927390
    Abstract: An aqueous suspension liquid of finely divided diamond particles comprising 0.05 to 160 parts by weight of a finely divided diamond particles in 1000 parts of water, wherein; (i) the finely divided diamond particles have an element composition consisting mainly of 72 to 89.5% by weight of carbon, 0.8 to 1.5% of hydrogen, 1.5 to 2.5% of nitrogen, and 10.5 to 25.0% of oxygen; (ii) and, almost all of said diamond particles are in the range of 2 nm to 50 nm in diameters thereof (80% or more by number average, 70% or more by weight average), (iii) and, said finely divided diamond particles exhibit a strongest peak of the intensity of the Bragg angle at 43.9° (2?±2°), strong and characteristic peaks at 73.5° (2?±2°) and 95° (2?±2°), a warped halo at 17° (2?±2°), and no peak at 26.5°, by X-ray diffraction (XRD) spectrum analysis using Cu—K? radiation when dried, (iv) and, specific surface area of said diamond particles when dry state powder is not smaller than 1.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: April 19, 2011
    Assignee: Tadamasa FUJIMURA
    Inventors: Tadamasa Fujimura, Masato Sone, Valeri Yu Dolmatov, Shigeru Shiozaki
  • Patent number: 7910083
    Abstract: A diamond layer of single crystal CVD diamond which is coloured, preferably which has a fancy colour, and which has a thickness of greater than 1 mm.
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: March 22, 2011
    Assignee: Element Six Limited
    Inventors: Daniel James Twitchen, Philip Maurice Martineau, Geoffrey Alan Scarsbrook, Barbel Susanne Charlotte Dorn, Michael Andrew Cooper
  • Publication number: 20110059006
    Abstract: A method and apparatus for production of nanoscale materials is disclosed. In the preferred embodiments, the invention is scalable and tunable to reliably produce nanoscale materials of specifically desired qualities and at relatively high levels of purity. In a preferred embodiment, combustible gas is discharged onto a substrate through a multi-zone flame facilitating the formation of nanoscale materials such as single and multi-wall nanotubes.
    Type: Application
    Filed: September 13, 2010
    Publication date: March 10, 2011
    Applicant: Continental Carbon Company
    Inventors: Jean-Baptiste Donnet, Marie Pontier Johnson, Don T. Norman, Thang Le Huu, Hanae Oulanti
  • Patent number: 7901661
    Abstract: A process for making a hydrogenated carbon material is provided which includes forming a mixture of a carbon source, particularly a carbonaceous material, and a hydrogen source. The mixture is reacted under reaction conditions such that hydrogen is generated and/or released from the hydrogen source, an amorphous diamond-like carbon is formed, and at least a portion of the generated and/or released hydrogen associates with the amorphous diamond-like carbon, thereby forming a hydrogenated carbon material. A hydrogenated carbon material including a hydrogen carbon clathrate is characterized by evolution of molecular hydrogen at room temperature at atmospheric pressure in particular embodiments of methods and compositions according to the present invention.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: March 8, 2011
    Assignee: The Penn State Research Foundation
    Inventors: Angela Lueking, Deepa Narayanan
  • Patent number: 7892356
    Abstract: It is an object of the present invention to provide a diamond substrate with high toughness, a large surface area, and high quality, for use in semiconductor materials, electronic components, optical components, and so forth, and a method for manufacturing this substrate. A diamond polycrystalline film is laminated on the surface of a diamond monocrystalline substrate to create a diamond composite substrate. In said diamond composite substrate, it is preferable that the main face, which has the largest surface area of the diamond monocrystalline substrate, be the {100} plane, and the diamond polycrystalline film be laminated on the opposite face parallel to this face. The diamond monocrystalline substrate 3 may be made up of a plurality of diamond monocrystals having the same orientation of the main face, and these plurality of diamond monocrystals may be joined by a diamond crystal layer 4 to create a diamond composite substrate 2.
    Type: Grant
    Filed: January 22, 2004
    Date of Patent: February 22, 2011
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kiichi Meguro, Yoshiyuki Yamamoto, Takahiro Imai
  • Patent number: 7887631
    Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.
    Type: Grant
    Filed: June 24, 2005
    Date of Patent: February 15, 2011
    Assignee: The Gemesis Corporation
    Inventors: Robert Chodelka, Hexiang Zhu, Alexander Novikov
  • Patent number: 7887628
    Abstract: A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer.
    Type: Grant
    Filed: March 5, 2007
    Date of Patent: February 15, 2011
    Assignee: Element Six Technologies (Pty) Ltd
    Inventors: Geoffrey Alan Scarsbrook, Philip Maurice Martineau, Barbel Susanne Charlotte Dorn, Michael Andrew Cooper, John Lloyd Collins, Andrew John Whitehead, Daniel James Twitchen, Ricardo Simon Sussman
  • Publication number: 20110031034
    Abstract: Polycrystalline compacts include hard polycrystalline materials comprising in situ nucleated smaller grains of hard material interspersed and inter-bonded with larger grains of hard material. The average size of the larger grains may be at least about 250 times greater than the average size of the in situ nucleated smaller grains. Methods of forming polycrystalline compacts include nucleating and catalyzing the formation of smaller grains of hard material in the presence of larger grains of hard material, and catalyzing the formation of inter-granular bonds between the grains of hard material. For example, nucleation particles may be mixed with larger diamond grains, a carbon source, and a catalyst. The mixture may be subjected to high temperature and high pressure to form in smaller diamond grains using the nucleation particles, the carbon source, and the catalyst, and to catalyze formation of diamond-to-diamond bonds between the smaller and larger diamond grains.
    Type: Application
    Filed: August 6, 2010
    Publication date: February 10, 2011
    Applicant: BAKER HUGHES INCORPORATED
    Inventors: Anthony A. DiGiovanni, Danny E. Scott
  • Patent number: 7883684
    Abstract: The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20° C., and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8% to about 20% CH4 per unit of H2 and from about 5 to about 25% O2 per unit of CH4. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 ?m/hour.
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: February 8, 2011
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-kwang Mao, Chih-shiue Yan
  • Patent number: 7879148
    Abstract: Synthetic monocrystalline diamond compositions having one or more monocrystalline diamond layers formed by chemical vapor deposition, the layers including one or more layers having an increased concentration of one or more impurities (such as boron and/or isotopes of carbon), as compared to other layers or comparable layers without such impurities. Such compositions provide an improved combination of properties, including color, strength, velocity of sound, electrical conductivity, and control of defects. A related method for preparing such a composition is also described, as well as a system for use in performing such a method, and articles incorporating such a composition.
    Type: Grant
    Filed: March 13, 2008
    Date of Patent: February 1, 2011
    Assignee: Apollo Diamond, Inc.
    Inventors: Robert C. Linares, Patrick J. Doering
  • Publication number: 20110020646
    Abstract: A method for producing a nanodiamond (n-diamond, p-diamond, i-carbon) in which a nanodiamond is removed from an activated carbon containing the nanodiamond. The activated carbon is prepared by carbonizing and/or activating a carbonaceous feedstock while restricting the presence of oxygen sufficiently to result in the formation of nanodiamonds embedded in carbon. The nanodiamonds can be separated and purified from the activated carbon, and can be concentrated by treatment of the activated carbon with an oxidizing agent. Also provided is a method for producing a nanodiamond, and particularly a nanodiamond fiber, by mixing a carbon source, a metal and an acid under conditions which result in nanodiamond formation. Nanodiamond fibers up to 2000 nanometers or more can be produced. The nanodiamond fibers can be woven or used to provide structural reinforcement for various materials.
    Type: Application
    Filed: January 22, 2009
    Publication date: January 27, 2011
    Inventors: Allen J. West, James Kennett
  • Publication number: 20110014451
    Abstract: Disclosed is a diamond film that can solve a problem of a conventional thin film of diamond which, due to insoluble, infusible and hardly machinable properties of the diamond, is produced by plasma CVD requiring the use of a disadvantageously large apparatus. Specifically, a nanodiamond film, which can be simply produced without the need to use a large apparatus, is disclosed. The nanodiamond film is characterized by comprising a nanodiamond. The nanodiamond film has a thickness of not more than 5000 nm.
    Type: Application
    Filed: March 2, 2009
    Publication date: January 20, 2011
    Inventor: Toshihiko Tanaka
  • Publication number: 20110014112
    Abstract: A method of forming mono-crystalline diamond by chemical vapour deposition, the method comprising the steps of: (a) providing at least one diamond seed; (b) exposing the seed to conditions for growing diamond by chemical vapour deposition, including supplying reaction gases that include a carbon-containing gas and hydrogen for growing diamond and include a nitrogen-containing gas; and (c) controlling the quantity of nitrogen-containing gas relative to other gases in the reaction gases such that diamond is caused to grow by step-growth with defect free steps without inclusions. The nitrogen is present in the range of 0.0001 to 0.02 vol %. Diborane can also be present in a range of from 0.00002 to 0.002 vol %. The carbon-containing gas can be methane.
    Type: Application
    Filed: June 18, 2009
    Publication date: January 20, 2011
    Inventor: Devi Shanker Misra
  • Patent number: 7867467
    Abstract: The invention relates to carbon chemistry and is embodied in the form of a nanodiamond comprising 90.0-98.0 mass % carbon, 0.1-5.0 mass % hydrogen, 1.5-3.0 mass % nitrogen and 0.1-4.5 mass % oxygen, wherein the carbon is contained in the form a diamond cubic modification and in a roentgen-amorphous phase at a ratio of (82-95):(18-5) in terms of a carbon mass, respectively. The inventive method for producing said material consisting in detonating in a closed space of a carbon-inert gas medium a carbon-containing oxygen-deficient explosive material which is placed in a condensed phase envelop containing a reducing agent at a quantitative ratio between said reducing agent mass in the condensed envelop and the mass of the used carbon-containing explosive material equal to or greater than 0.01:1 and in chemically purifying by treating detonation products with a 2-40% aqua nitric acid jointly with a compressed air oxygen at a temperature ranging from 200 to 280° C. and a pressure of 5-15 MPa.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: January 11, 2011
    Assignees: Federal State Institution “Federal Agency for Legal Protection of Military, Special and Dual Use Intellectual Activity Results” Under Ministry of Justics of the Russian Federation, Joint-Stock Company “Diamond Centre”
    Inventor: Valery Yurievich Dolmatov
  • Patent number: 7862792
    Abstract: The invention relates to carbon chemistry and is embodied in the form of a diamond-carbon material, in which carbon is contained in the form a diamond cubic modification and in a roentgen-amorphous phase at a ratio of (40-80):(60-20) in terms of a carbon mass, respectively, wherein the inventive material comprises 89.1-95.2 mass % carbon, 1.2-5.0 mass % nitrogen, 0.1-4.7 mass % oxygen and 0.1-1.5 mass % fire-resisting impurities. The inventive method for producing said material consisting in detonating, in a closed space of a carbon-inert gas medium, a carbon-containing oxygen-deficient explosive material, which is placed in a condensed phase envelop containing a reducing agent at a quantitative ratio between said reducing agent mass in the condensed phase and the mass of the used carbon-containing explosive material equal to or greater than 0.01:1.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: January 4, 2011
    Assignees: Federal State Insitution “Federal Agency for Legal Protection of Military, Special and Dual Use Intellectual Activity Results” Under Ministry of Justics of the Russian Federation, Joint-Stock Company “Diamond Centre”
    Inventor: Valery Yurievich Dolmatov
  • Publication number: 20100329962
    Abstract: A method of introducing NV centres in single crystal CVD diamond material is described. One step of the method comprises irradiating diamond material that contains single substitutional nitrogen to introduce isolated vacancies into the diamond material in a concentration of at least 0.05 ppm and at most 1 ppm. Another step of the method comprises annealing the irradiated diamond to form NV centres from at least some of the single substitutional nitrogen defects and the introduced isolated vacancies.
    Type: Application
    Filed: June 25, 2010
    Publication date: December 30, 2010
    Inventors: Daniel James Twitchen, Sarah Louise Geoghegan, Neil Perkins, Rizwan Uddin Ahmad Khan
  • Publication number: 20100329965
    Abstract: A method of making fancy pale blue or fancy pale blue/green CVD diamond material is described. The method comprises irradiating single crystal diamond material that has been grown by a CVD process with electrons to introduce isolated vacancies into the diamond material, the irradiated diamond material having (or after a further post-irradiation treatment having) a total vacancy concentration [VT] and a path length L such that [VT]×L is at least 0.072 ppm cm and at most 0.36 ppm cm, and the diamond material becomes fancy pale blue or fancy pale blue/green in colour. Fancy pale blue diamonds are also described.
    Type: Application
    Filed: June 25, 2010
    Publication date: December 30, 2010
    Inventors: Daniel James Twitchen, Sarah Louise Geoghegan, Neil Perkins
  • Publication number: 20100329961
    Abstract: Starting from a diamond material which shows a difference in its absorption characteristics after exposure to radiation with an energy of at least 5.5 eV (typically UV radiation) and thermal treatment at 798K, controlled irradiation is applied so as to introduce defects in the diamond material. After the controlled irradiation the difference in the absorption characteristics after exposure to radiation with an energy of at least 5.5 eV and thermal treatment at 798K is reduced.
    Type: Application
    Filed: June 25, 2010
    Publication date: December 30, 2010
    Inventors: Harpreet Kaur Dhillon, Sarah Louise Geoghegan, Daniel James Twitchen
  • Publication number: 20100326135
    Abstract: A method of making fancy orange synthetic CVD diamond material is described. The method comprises irradiating a single crystal diamond material that has been grown by CVD to introduce isolated vacancies into at least part of the CVD diamond material and then annealing the irradiated diamond material to form vacancy chains from at least some of the introduced isolated vacancies. Fancy orange CVD diamond material is also described.
    Type: Application
    Filed: June 25, 2010
    Publication date: December 30, 2010
    Inventors: Daniel James Twitchen, Sarah Louise Geoghegan, Neil Perkins
  • Patent number: 7857876
    Abstract: Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less. Such polishing material is produced first by an explosion shock method to obtain diamond clusters and then removing the impurities such that density of non-diamond carbon contained in the impurities and density of chlorine contained in other than non-diamond carbon in the impurities become adjusted.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: December 28, 2010
    Assignee: Nihon Micro Coating Co., Ltd.
    Inventors: Noriyuki Kumasaka, Yuji Horie, Mitsuru Saito, Kazuei Yamaguchi
  • Patent number: 7854823
    Abstract: A process for converting carbonaceous material into diamond utilizing the compressive force derived from an abruptly collapsing magnetic field.
    Type: Grant
    Filed: June 20, 2006
    Date of Patent: December 21, 2010
    Inventor: Alvin A. Snaper
  • Publication number: 20100294571
    Abstract: The present disclosure relates to cutting elements incorporating polycrystalline diamond bodies used for subterranean drilling applications, and more particularly, to polycrystalline diamond bodies having a high diamond content which are configured to provide improved properties of thermal stability and wear resistance, while maintaining a desired degree of impact resistance, when compared to prior polycrystalline diamond bodies. In various embodiments disclosed herein, a cutting element with high diamond content includes a modified PCD structure and/or a modified interface (between the PCD body and a substrate), to provide superior performance.
    Type: Application
    Filed: May 20, 2010
    Publication date: November 25, 2010
    Inventors: J. Daniel Belnap, Georgiy Voronin, Feng Yu, Peter T. Cariveau, Youhe Zhang, Yuelin Shen, Guodong Zhan
  • Publication number: 20100278712
    Abstract: The present invention provides a method and formulation for the creation of a diamond-carbon bearing material of varying particle sizes. The material is a detonation by-product of explosive formulations that employ carbon dioxide as the oxidizing agent and a material, such as powdered magnesium, as the fuel for such detonation.
    Type: Application
    Filed: December 22, 2008
    Publication date: November 4, 2010
    Inventor: Daren Normand Swanson
  • Publication number: 20100272627
    Abstract: A method of making a multi-faceted diamond is provided. Such a method can include obtaining a diamond having a substantially euhedral morphology and a plurality of primary crystallographic faces and polishing a plurality of primary apexes defined by the primary crystallographic faces to form a plurality of secondary faces and secondary apexes.
    Type: Application
    Filed: February 23, 2010
    Publication date: October 28, 2010
    Inventor: Chien-Min Sung
  • Patent number: 7820130
    Abstract: The present invention is directed to functionalized nanoscale diamond powders, methods for making such powders, applications for using such powders, and articles of manufacture comprising such powders. Methods for making such functionalized nanodiamond powders generally comprise a fluorination of nanodiamond powder. In some embodiments, such methods comprise reacting fluorinated nanodiamond powder with a subsequent derivatization agent, such as a strong nucleophile.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: October 26, 2010
    Assignee: William Marsh Rice University
    Inventors: Valery N. Khabashesku, Yu Liu, John L. Margrave, Mary Lou Margrave, legal representative
  • Patent number: 7820131
    Abstract: The present invention is directed to new uses and applications for colorless, single-crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: October 26, 2010
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-Shiue Yan
  • Publication number: 20100254884
    Abstract: In certain implementations, a method of manufacturing electrically conductive nanodiamond particles involves providing at least one type of carbon-containing explosive material and at least one type of non-explosive material; wherein the non-explosive material contains at least one or more than one element or species other than nitrogen that serve as a nanodiamond dopant; mixing the carbon containing explosive material with the non-explosive material; detonating the mixture under conditions of negative oxygen balance in the presence of a cooling medium; purifying the product of detonation from incombustible impurities; and carrying out additional processing for activation or enhancement of electrical conductance. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 7, 2010
    Inventor: Olga Shenderova
  • Patent number: 7807126
    Abstract: A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
    Type: Grant
    Filed: February 3, 2009
    Date of Patent: October 5, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kiichi Meguro, Yoshiyuki Yamamoto, Takahiro Imai
  • Patent number: 7771693
    Abstract: A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 ?m and less than 400 ?m, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.
    Type: Grant
    Filed: August 15, 2008
    Date of Patent: August 10, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Kiichi Meguro, Yoshiyuki Yamamoto, Takahiro Imai
  • Patent number: 7771498
    Abstract: Superabrasive tools having improved caustic resistance and their methods of manufacture are disclosed. One aspect may include a method of providing caustic resistance along an entire working surface of a superabrasive tool having embedded superabrasive particles. Such a method may include forming a protective layer through reaction between a reactive source and a reactive element in situ along substantially all of the working surface at an interface between the reactive source and a support matrix including the reactive element, and between each of a plurality of superabrasive particles and the support matrix. At least a portion of the reactive source may then be removed to expose the protective layer. In some aspects, the protective layer may be substantially continuous.
    Type: Grant
    Filed: May 17, 2006
    Date of Patent: August 10, 2010
    Inventor: Chien-Min Sung
  • Patent number: 7767184
    Abstract: The present invention provides films and substrates coated with films that comprise a nano-crystalline diamond matrix that is substantially free of graphite inclusions. The present invention also provides a method of chemical vapor deposition to prepare the films. The method of chemical vapor deposition operates at a DC bias voltage that substantially precludes the formation of a plasma ion capable of causing a region of a nano-crystalline diamond matrix within a forming film to allotrope when the plasma ion collides with the film.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: August 3, 2010
    Assignee: Nanotech LLC
    Inventor: John Harvie Chaffin, III
  • Publication number: 20100181534
    Abstract: Photoluminescent nanodiamond particles of dynamic synthesis have enhanced photoluminescent properties produced as a result of minimizing the nitrogen content of impurities or imperfections in the nanodiamond lattice and by location of photoluminescent structures on the outer surface of the nanodiamond particles. This inhibits suppression (i.e. inactivity) of emission and enhances the intensity of the emission. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
    Type: Application
    Filed: February 26, 2010
    Publication date: July 22, 2010
    Inventors: Olga Shenderova, Igor Vlasov, Suzanne Ani Ciftan Hens, Vesna Borjanovic
  • Publication number: 20100178233
    Abstract: The present invention relates to a method of making a more permanent remembrance from a graphitizable or carbon-containing material, wherein the material is part of or embodied in an ephemeral object that signifies a power, attribute, memory, custom, tradition, emotion or symbolism associated with a life experience or event. The method includes transforming the ephemeral object to the more permanent remembrance by converting the carbon-containing material to a synthetic diamond, thus transferring the power, attribute, memory, custom, tradition, emotion or symbolism of the object or the associated life experience or event into the diamond. The synthetic diamond can be prepared by transforming the carbon-containing material to a carbon compound or carbon-containing compound; and then converting the carbon compound or carbon-containing compound into the synthetic diamond.
    Type: Application
    Filed: April 14, 2004
    Publication date: July 15, 2010
    Inventor: John N. Hatleberg
  • Publication number: 20100178234
    Abstract: The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost.
    Type: Application
    Filed: January 4, 2010
    Publication date: July 15, 2010
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Hitoshi Noguchi
  • Patent number: 7754179
    Abstract: Methods of synthesizing a diamond material, particularly nanocrystalline diamond, diamond-like carbon and bucky diamond are provided. In particular embodiments, a composition including a carbon source, such as coal, is subjected to addition of energy, such as high energy reactive milling, producing a milling product enriched in hydrogenated tetrahedral amorphous diamond-like carbon compared to the coal. A milling product is treated with heat, acid and/or base to produce nanocrystalline diamond and/or crystalline diamond-like carbon. Energy is added to produced crystalline diamond-like carbon in particular embodiments to produce bucky diamonds.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: July 13, 2010
    Assignee: The Penn State Research Foundation
    Inventors: Angela Lueking, Humberto Gutierrez, Deepa Narayanan, Caroline E. Burgess Clifford, Puja Jain
  • Patent number: 7754180
    Abstract: A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: July 13, 2010
    Assignee: Carnegie Institution of Washington
    Inventors: Russell J. Hemley, Ho-Kwang Mao, Chih-shiue Yan
  • Publication number: 20100166636
    Abstract: The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate. According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.
    Type: Application
    Filed: December 23, 2009
    Publication date: July 1, 2010
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Hideaki Yamada, Akiyoshi Chayahara, Yoshiaki Mokuno, Shinichi Shikata
  • Publication number: 20100166635
    Abstract: A method for growing diamonds under high pressure high temperature (HPHT) is provided. In one aspect, such a method can include providing a growth precursor including a carbon source and a catalyst material, the growth precursor having a diamond precursor particle arranged at least partially therein, melting the diamond precursor particle, and growing a diamond particle by subjecting the melted diamond precursor particle and the growth precursor to temperature and pressure conditions sufficient for diamond growth. In some aspects, the resulting diamond particle can be utilized as a diamond precursor particle in a subsequent reaction to grow an even larger diamond particle.
    Type: Application
    Filed: December 11, 2009
    Publication date: July 1, 2010
    Inventor: Chien-Min Sung