Abstract: The present invention relates to an aqueous conductive polymer thick film-forming composition comprising a water-soluble thermoplastic polymer, a polymer dispersion in water, a glycol drying-retarder agent, an electrically conductive amount of conductive metal and/or carbon particles and water. The composition in the production of a highly printable conductive thick film ink.

Abstract: There is disclosed a passivating coating composition suitable for application as a collar to metal oxide varistor valve block cylindrical surfaces comprising a mixture of 64-74 parts by weight of a glass powder, 22-35 parts by weight of water, and 0.5-2 parts by weight of an additive comprising fumed silica, clay and urea.

Abstract: This invention relates to solid-state smoke detectors and smoke (fire) alarm systems, and more particularly to a novel and improved smoke-sensitive element comprising a bismuth oxide film deposited on one surface of an electrically insulating material. It also relates to a method of depositing this oxide on a substrate, of heat treatment which provides for a highly smoke-sensitive film, and to smoke detector signal processing circuits.

Abstract: A hybrid resistance card (R-Card) is manufactured using a two-step process wherein an electrically conductive ink layer and an electrically resistive ink layer are printed onto a surface, which may be either a substrate or the part on which the R-Card is to be used. The conductive ink layer is selectively applied in a pattern of shapes to electrically short out portions of the resistive ink layer, thereby permitting the R-Card to have a predetermined resistive taper across its width according to a desired resistivity curve. The resistive ink layer comprises grid-like lines bordering and separating the conductive shapes. The resistive taper is substantially continuous along the length of the R-Card, at least linearly, though if the card is designed to cover an entire part, it is substantially continuous along a plurality of directions on the card, with the tapers being designed to round into one another.

Abstract: A process is disclosed for producing a swellable plastic resistive moisture sensor comprising dispersing an additive selected from the group consisting of carbon in powder, dust or soot form, carbon black, graphite, a metal in powder or dust form, and mixtures thereof, into a plastic comprising a polyimide or a copolyimide or both formed from diisocyanate and dianhydride reactants.

Abstract: An electrically resistive film of the type used for forming thick film resistors is formed predominantly of palladium and includes an addition of boron nitride to increase resistance, preferably in combination with tantalum oxide. A paste of palladium powder and boron nitride powder dispersed in a vaporizable vehicle is applied to a substrate and sintered to form the film. In a preferred embodiment, the substrate is a ceramic powder compact that is concurrently sintered in a co-firing process.

Abstract: The present invention provides an improved method for firing thick film inks in hybrid circuits which comprises firing different copper compatible thick film materials in a single firing atmosphere. The method comprises the steps of providing a paste suitable for application to a ceramic substrate, applying the paste to the substrate by a conventional technique such as screen printing, drying the substrate, and firing the substrate at an elevated temperature in an ambient comprising an inert gas and carbon dioxide to form the electrical component. In another embodiment, the substrate is fired in an ambient comprising only carbon dioxide.

Abstract: A method for manufacturing hygristors includes preparing a hygroscopic gel containing a substantially greater proportion of carbon than the prior art, and milling the gel for a period of at least 24 hours to produce a smooth mixture. Substrates are dipped into the milled gel at controlled rates to coat the substrates. The coated substrates are cured under controlled temperature and humidity. Adhesion of the coating is improved by the smoother mixture resulting from the longer milling time, and by the differences in components of the mixture compared to the prior art. Long term stability and dynamic range are both increased.

Abstract: A thermistor film is prepared by first preparing an alcohol solution is prepared by dissolving a metal compound in one or more kinds of polyvalent alcohols selected from the group consisting of ethylene glycol, diethylene glycol and glycerin. A coating solution is then prepared by adding and mixing an organic acid having a carboxyl group to the alcohol solution. The coating solution is coated on the surface of a heat-resistant substrate to form a coating film, the substrate on which the coating film is formed is dried and subjected to heat treatment to form a composite oxide precursor containing a metal of the above metal compound, and the precursor is calcined at a temperature of 600.degree. to 1000.degree. C. The method of the present invention can form a thermistor thin film which is dense and uniform over a wide range by simple and easy operations at a low cost.

Abstract: Soluble conducting polymers from substituted polyanilines and large organic counterions are disclosed and used directly from solution in the manufacture of electronic devices.

Abstract: Conductivizing coating solutions prepared from cuprous iodide and ligands which are pyridine or monodentate pyridine derivatives provide excellent transparent, conductive coatings for use in electrophotographic and ground plane including articles. The coating compositions may also utilize solvents which solubilize the cuprous iodide-ligand complex formed. A method of forming transparent conductivizing coating solutions is also provided.

Abstract: A thin film resistor having a characteristic that an increase phenomenon of a resistance controlled at a high temperature is generated. The resistor is obtained by controlling its composition and manufacturing method so as to suppress an increase in the resistance of a Cr-Si resistor thin film due to deposition of chromium silicide at a high temperature. A sputtering target, which is used as a raw material for forming the thin film, is made from chromium silicide and silicon so that some chromium silicide is already formed immediately after deposition, and chromium oxide and silicon oxide are contained in the thin film so as to suppress the speed whereat chromium and silicon, which do not form silicide, form silicide by heating after deposition and to allow the above silicide formation to advance slowly.

Abstract: A semiconductor processing method of forming a resistor device includes, a) providing a layer of conductively doped polysilicon atop a substrate to a selected thickness, the layer of polysilicon having an upper surface and a base, the layer of polysilicon having grain boundaries therewithin which extend from the upper surface to the base and define polysilicon grains; b) oxidizing the polysilicon layer at a temperature from about 850.degree. C. to about 1050.degree. C. for a selected period of time to form SiO.sub.x within the polysilicon layer along the grain boundaries and down to the base to separate individual grains of polysilicon within the layer; and c) patterning the oxidized polysilicon layer to form a resistor device within an integrated circuit.

Abstract: The invention relates to a temperature sensor with platinum of temperature-sensitive material, and a process for the production of such a temperature sensor. The problem of the invention is to provide a miniaturized temperature sensor as small as possible which can be used at temperatures of 600.degree. C. to over 1,000.degree. C. For solution, the invention proposes a temperature sensor in which the layer contains finely divided metal platinum in oxide ceramic. Production takes place by mixing together platinum powder, oxide and binder, and after supplying the layer on the support substratum, tempering with this latter.

Abstract: A thick-film switch element includes a high-temperature glass frit fused to a ceramic substrate. A cermet layer having a low-temperature glass matrix is fired in a conventional furnace to sink into the glass frit layer such that the resulting thickness of the switch element layer is approximately equal to the original thickness of the glass frit layer. The exposed surface of the resulting thick-film switch element product is substantially smooth and the joint between the low-temperature cermet layer and the high-temperature glass frit layer is substantially uniform.

Abstract: A detection element including a cylindrical base body, an electric resistor formed on an outer peripheral surface of the base body, and lead wires attached to ends of the base body. The lead wires are electrically connected to the electric resistor. An electrically thick film is provided over end faces of the base body, an inner peripheral surface and an outer peripheral surface of the base body near each of the opposite ends of the base body, and the lead wires are electrically connected to the resistor at least through the electrically conductive thick film.

Abstract: A Josephson integrated circuit comprises a substrate formed with a Josephson device, a resistance strip of zirconium provided on the substrate, a first refractory metal layer provided on a first region of the resistance strip; a second refractory metal layer provided on a second region of the resistance strip that is separated from said first region, a first superconductor interconnection pattern provided on the substrate so as to cover the first refractory metal layer, and a second superconductor interconnection pattern separated from the first superconductor interconnection pattern and provided on the substrate so as to cover the second refractory metal layer.

Abstract: A method for producing a resistor is disclosed, comprising coating a metal organic compound solution containing a ruthenium complex and at least one complex of an element selected from the group consisting of silicon, barium, bismuth and lead on a substrate and then firing it. This resistor is a uniform thin-film resistor and is suitable for use as a resistor to be used in hybrid ICs and various electronic devices.

Abstract: A resistor (10) includes a resistive filling (28) formed within a trench (12) and separated therefrom by an insulating layer (26). Resistive filling (28) is of the same type of semiconductor material as that of second layer (22), but of an opposite extreme of dopant concentration. A head region (32) may be formed below interface (30) within second layer (22) to more clearly delineate the edge of resistive filling (28) from second layer (22). Where resistive filling (28) is of a low dopant concentration, low resistance contact region (34) is formed of a high dopant concentration in order to provide a minimum resistance contact to resistive filling (28).

Abstract: A generic chip carrier is described which includes, as integral parts, a voltage bus and a plurality of terminating resistors connected between the voltage bus and signal traces on the carrier. The voltage bus wraps around the chip carrier, thus providing a large area of metal. Through the selective use of the terminating resistors, the generic carrier can be customized for a particular type of integrated circuit, i.e., source or destination termination of signals. A signal trace may be customized by "opening" the terminating resistor with a current spike applied by a standard electrical probe. Spare bonding pads and terminating resistors are placed at intervals about the periphery of the carrier as insurance against defective or mistakenly removed terminating resistors.

Abstract: A method for manufacturing an electric resistance element first prepares carbon particles by thermally treating these particles, such as carbon black at a temperature of at least 300.degree. C. Then a separate mixture of the carbon particles in an epoxy resin is prepared by mixing the carbon particles with a solution of an amino resin to at least partially cause adsorption, occlusion or reaction between the carbon particles and the amino resin. Then the amino resin is polymerized by heating. A further mixture is prepared by mixing a solution of epoxy resin with the first mixture to prepare a paste material which is then coated onto the surface of a substrate. The coating is then thermally cure to form a resistance film on the surface of the substrate.

Abstract: A method is described for providing electrically resistive elements for mounting in an electrical resistor device for engagement with a relatively movable contact member, as in a potentiometer. A pair of termination openings are formed through a substrate of insulating material such as plastic film. A release liner is applied to the undersurface of the substrate to cover the openings. An electrically conductive medium is applied in fluid (paste) form to the top surface of the substrate and is caused to fill the termination openings, as by applying pressure. The conductive medium is solidified and the release liner is removed. A resistive medium for ultimate engagement with the movable contact is applied to the top surface of the substrate in engagement with the termination openings. The resistive track is shaped as desired, either linear or an annular segment, preferably as part of final shaping steps which also remove the resistive element from a continuous strip of the substrate material.

Abstract: A process for producing nonlinear resistance tracks on a supporting base uld be carried out in such a way that constant transitions are provided between the nonlinear resistance sub-ranges. For this purpose the supporting base is moved under a coating device at right angles to the longitudinal direction of the base strips provided whereby this coating device applies several strips of resistance paste onto the supporting base in the wet condition so that they are close to each other. The resistance pastes have different resistance values according to the set non-linear resistance pattern. The base strips are cut out of the supporting base at right angles to its direction of movement.

Abstract: A process for manufacturing close tolerance thick film resistors on a ceramic dielectric substrate is disclosed. The process includes the steps of printing resistor terminations to the dielectric substrate using a precious conductor material and fixing the resistor terminations by drying and firing in air. A resistive material is next printed to portions of the resistor terminations and to the dielectric substrate intermediate the resistor terminations. The resistive material is fixed by drying and firing in air. Terminal pads, conductor traces and resistor interconnections are printed on the dielectric substrate using a base conductor material. The resistor interconnections are also printed to the resistor terminations and to portions of the resistive material. The terminal pads, conductor traces and resistor interconnections are then air dried and fired in nitrogen.

Abstract: A precision resistance network of individual resistances R.sub.i, especially for thick-film hybrid circuits includes an integrated structure formed of an electrically insulated substrate, having an electrically conductive film of constant thickness d applied thereto, the electrically conducted layer having a surface resistance (R.sub.S) exclusively dimensioned as a function of the individual resistances (R.sub.

Abstract: A ceramic composition for dielectrics, consisting essentially of an inorganic dielectric material including at least one electrically insulating glass and at least one organic binder, and further comprising at least one inorganic peroxide. The inorganic peroxide serves to facilitate burnout or removal of the organic binder during firing of the ceramic composition and minimizes the content of residual carbon in the fired ceramic composition. The inorganic peroxide is preferably selected from the group consisting of calcium peroxide, strontium peroxide, barium peroxide, zinc peroxide and cadmium peroxide, and present preferably in an amount of 0.1-40% by weight. Also disclosed is a process of manufacturing a ceramic circuit board using the ceramic composition stated above.

Abstract: A thin film resistor is formed using sputtering to deposit a thin film of resistive material on an insulating surface. The sputter target is composed of constituents which are normally present in relatively large quantities in thin film resistors, such as chromium silicide and silicon carbide. The sputtered thin film material is formed into resistor regions. An insulating layer is deposited over the thin film material. Ions (e.g., boron ions) are then implanted into the thin film through the insulating layer. These implanted constituents have a significant effect on the temperature coefficient and sheet resistance of the thin film resistor. Ion implantation of these constituents enables more control over the characteristics of the thin film resistor as compared to prior art techniques not using ion implantation.

Abstract: Thick-layer hybrid electronic printed circuits are formed by printing predetermined circuit pattern onto an insulating substrate by deposition of predetermined ink pattern thereupon, advantageously by silk-screening or masking, and thence baking said ink circuit pattern, and repeating the deposition/baking steps as required, the subject forming process featuring use of an insulating ink comprising a non-conductive metallic oxide extender, desirably cuprous oxide, which ink is thus either potentially conductive or potentially resistive, and the development of such conductivity or resistivity, after baking, by treating the ink pattern with a reducing agent, desirably a borohydride, as to readily and quantitatively convert said metal oxide into a conducting metal.

Abstract: Thin film electrodes are formed on a chip-type electronic component for connecting to external circuitry.The electronic components is first located so that a first principal plane thereof faces toward a scattering source of an electrode-forming. The first principal plane is covered with a mask except for a pair of edge portions of the first principal plane, which extend a little toward the center of the first principal plane from a pair of first edges. The first edges are respectively defined by the first principal plane and two opposing end planes of the component.A thin film of the electrode material is deposited on each of the edge portions of the first principal plane, on the first edges, and on first portions of the end planes, which extend onto the end planes from the first edges.Then the electronic component is located so that a second principal plane counter to the first principal plane faces toward the scattering source.

Abstract: A heater backed with a ceramic substrate having a ceramic substrate as a base plate and heating element formed thereon, which comprises a conductor for retaining ionized elements, said conductor branching from a terminal lead portion of the minus side connected to the heater element under an applied electric current and extending at the back side of the base plate, along the heating element pattern at least partly thereof. A protecting layer may be provided on the surface of said conductor. The conductor is connected with the lead portion through a conducting through hole.

Abstract: A voltage non-linear resistor excellent in varistor voltage characteristics, lightning discharge current withstanding capability and life performance against applied voltage comprises a disc-like voltage non-linear element and a thin insulating covering layer integrally provided on the side surface of said element. In the resistor according to the invention, said element comprises zinc oxides as main ingredient, 0.1-2.0% bismuth oxides, as Bi.sub.2 O.sub.3, 0.1-2.0% cobalt oxides, as CO.sub.2 O.sub.3, 0.1-2.0% manganese oxides, as MnO.sub.2, 0.1-2.0% antimony oxides, as Sb.sub.2 O.sub.3, 0.1-2.0% chromium oxides, as Cr.sub.2 O.sub.3, 0.1-2.0% nickel oxides, as NiO, 0.001-0.05% aluminum oxides, as Al.sub.2 O.sub.3, 0.005-0.1% boron oxides, as B.sub.2 O.sub.3, 0.001-0.05% silver oxides, as Ag.sub.2 O and 7-11% silicon oxides, as SiO.sub.2, and said layer comprises 45-60% silicon oxides, as SiO.sub.2, 30-50% zinc oxides, as ZnO, 1-5% bismuth oxides, as Bi.sub.2 O.sub.

Abstract: The invention relates to a method of manufacturing a device in which a homogeneous electrical resistance layer of a resistive material having 10 ohm.cm is formed on an insulating substrate. According to the invention a stable binder-free suspension containing ruthenium hydroxide and glass particles is provided on the insulating substrate from which a ruthenium oxide-containing electrical resistance layer is formed by heating. The method according to the invention may be used successfully, for example, in the manufacture of cathode ray tubes.

Abstract: An electroceramic heater including a pair of metallized electrodes disposed upon the sides of an electroceramic body and a pair of lead wires gap is welded to said heater. A specially sized copper pad is disposed between the lead wires and the electrodes.

Abstract: The adjustment of the temperature coefficient of resistance (TCR) of a thick film resistor by laser annealing is disclosed. The thick film resistor is fired for a controlled time and temperature sufficient to burn off the organic material in the resistive paint, and to provide an initial adjustment of the (TCR), but prior to obtaining the desired (TCR) range. The resistor is then laser annealed to controllably adjust the (TCR) of the resistor within the desired (TCR) range. The fixture used to hold the substrate during laser annealing is preferably controllably heated to avoid thermal shock to the resistor during laser annealing. A microprocessor is preferably used to monitor the (TCR) during the laser annealing process. At least one of the laser scan speed, laser beam diameter, laser beam power, and number of annealing passes are used to controllably adjust the resistor (TCR) to within the desired (TCR) range.

Abstract: A high resistivity layer is disclosed for a medal oxide voltage-nonlinear resistor (varistor) for arrestors and surge absorbers of the type having a sintered body containing zinc oxide as a major component and two spaced electrodes attached to the surface of the body wherein the electrodes are insulated from one another by the high resistivity layer. The high resistivity layer of the invention consists essentially of at least zinc ferrate (III). The high resistivity layer is formed by sintering a slurry containing ferric oxide (Fe.sub.2 O.sub.3) as a major component.

Abstract: A method for moistureproof coating of an electrical product, which comprises applying an organic solution of a polyfluoroalkyl group-containing polymer dissolved in a non-combustible low boiling point organic solvent, to a surface of an electrical product, and drying it by evaporating the low boiling point organic solvent, to form a coating layer of the polyfluoroalkyl group-containing polymer on the surface of the electrical product, wherein said polyfluoroalkyl group-containing polymer is a copolymer of a polymerizable compound having a polyfluoroalkyl group with other polymerizable compound, and the copolymer has a glass transition temperature of not higher than 60.degree. C.

Abstract: A thick film resistor composition, comprising a silicide powder composed of a molybdenum disilicide, a tantalum disilicide and a magnesium silicide, and an alkaline earth borosilicate glass powder dispersed in a vehicle containing a heat-depolymerizing organic polymer. The thick film resistor composition, employing this heat-depolymerizing organic polymer, can be fired in a nonoxidizing atmosphere and coexist with base metal materials such as copper electrodes. Owing to the Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 contained in the alkaline earth borosilicate glass powder, the thick film resistor composition is free from sheet resistivity fluctuation, according to resistor length, which would result from diffusion of the electrode material into the resistor.

Abstract: A paste composed of Li.sub.2 CO.sub.3, SiO.sub.2, Sb.sub.2 O.sub.3 and Bi.sub.2 O.sub.3 is coated and baked on a side surface of a sintered ZnO based nonlinear voltage dependent resistor body to form a high resistance side surface for improving a impulse current withstand of the resistor.The amount of the paste constituent is 1.about.2.5 mol % for Li.sub.2 CO.sub.3, 72.+-.5 mol % for SiO.sub.2, 20.+-.3 mol % for Sb.sub.2 O.sub.3 and 8.+-.2 mol % for Bi.sub.2 O.sub.3.

Abstract: A method of forming external electrodes at both ends of chip parts while elastically holding the chip parts.

Abstract: Base metal resistive paints, resistors made therefrom and method for making the resistive paint are disclosed. The base metal resistive paints comprise 20 to 25% tantala glass frit and 75 to 80% tin oxide, ground to a particle size of ten microns or less; and well mixed with 25 to 35% screening agent for subsequent screening upon a suitable substrate, and firing in an inert atmosphere at a peak temperature of about 900.degree. C. The tantala glass frit preferably comprises 5 to 25% tantatum oxide. The tin oxide is preferably preheated at 450.degree. to 600.degree. C. in the presence of a reducing gas, prior to mixing with the tantala glass frit. The screening agent preferably forms no carbon residue when pyrolytically decomposed in an inert atmosphere during firing.

Abstract: The specification discloses a method for making a curved, conductively coated glass member, and the resulting product, by providing for a sufficient degree of substoichiometry at the moment of bend that the glass can be bent using conventional bending techniques without crazing the coating. Two alternative methods for achieving the degree of substoichiometry are disclosed. One involves coating the part to an initial light transmittance (T.sub.o) which is lower than that typically sought by prior artisans. The other involves bending the part in a reducing environment. Also disclosed is a method for increasing conductivity of the coating by exposing the coated part to a reducing environment at temperatures considerably higher than those heretofore thought feasible for use in reduction curing.

Abstract: This invention relates to thick film base metal resistive paints for firing on a substrate to form a resistor having a temperature coefficient of resistance within .+-.100 ppm/.degree.C., while providing a means to selectively blend the resistive paint to provide a wide range of decade resistivities from less than 10 ohms/square to more than 1K ohms/square. The sheet resistance and TCR are controlled by mixing a glass frit from at least one of a first and second glass material; with TiSi.sub.2 ; and at least one of Ti.sub.5 Si.sub.3 and AL.sub.2 O.sub.3 ; and a screening agent, for subsequent screening onto a substrate and firing in an inert atmosphere at a peak temperature of about 900.degree. C. The first glass material comprises, by weight, 5 to 10% SiO.sub.2 ; 30 to 50% BaO; 40 to 60% B.sub.2 O.sub.3 and 1 to 5% CuO. The second glass material comprises, by weight, 50 to 70% B.sub.2 O.sub.3 ; 25 to 45% SrO; and 2 to 10% SiO.sub.2.

Abstract: A resistance-variation type moisture sensor comprising a moisture sensitive film made of a moisture sensitive material which consists essentially of sodium styrenesulfonate, methylene-bis-acrylamide, polyvinyl alcohol and polyethylene glycol, said polyethylene glycol being contained in the moisture sensitive film in an amount ranging from 3 to 7 parts by weight per 100 parts by weight of sodium styrenesulfonate.

Abstract: An electrical resistor comprising an insulating substrate, a thin continuous siloxane film of a reaction product of a hydrolyzed silane coated on the insulating substrate, the hydrolyzed silane may have the general formula: ##STR1## wherein R.sub.1 is an alkylidene group containing 1 to 20 carbon atoms, R.sub.2, R.sub.3 and R.sub.7 are independently selected from the group consisting of H, a lower alkyl group containing 1 to 3 carbon atoms and a phenyl group, X is an anion of an acid or acidic salt, and y is 1, 2, 3 or 4, and at least two spaced apart electrodes in electrical contact with the thin continuous siloxane film on the insulating substrate. Processes for preparing and using the resistor are also disclosed.

Abstract: A process for fabricating electronic switching elements and/or circuits in multilayer thick-film technology on a substrate. The electronic switching elements and/or circuits are printed onto the substrate in the form of liquid or pasty mixtures of materials, then heat-treated, whereupon at least one insulating layer is deposited on the thick-film conducting layer. In this process, the surface of any desired insulating interlayer is finished abrasively and subsequently again at least one thick-film conducting layer or at least one insulating layer is deposited on the finished surface. Then, the surface or this insulating layer is again finished abrasively in subsequent printing operations of thick-film conducting layers or in other insulating layers in order to provide upon completion each layer at least the same processing ingredients and conditions as those on the surface of the substrate.

Abstract: A method of coating an electronic component comprises applying a U.V. curable liquid resin containing a photoinitiator, rotating the coated component from its coating position, and passing the rotated component next to a source of U.V. radiation.

Abstract: The invention is directed primarily to a method of doping tin oxide with Ta.sub.2 O.sub.5 and/or Nb.sub.2 O.sub.5 using pyrochlore-related compounds derived from the system SnO--SnO.sub.2 --Ta.sub.2 O.sub.5 --Nb.sub.2 O.sub.5 for use in thick film resistor compositions. The invention is also directed to thick film resistors containing the above-described pyrochlore-related compounds and to various compositions and methods for making such thick film resistors.

Abstract: A method for fabricating a solid state semiconductor gas sensor and the semiconductor sensor itself for use in equipment detecting small amounts of H.sub.2 S. The method of sensor fabrication comprises spray deposition of a mixture of metal oxides mixed together with various metal and non-metal materials which serve in the finished product as activators, dopants, and/or film binder materials, and including in suspension a molecular sieve material, for enhancing porosity on a scale of molecular dimensions in the finished sensor. All of the foregoing materials are suspended in a suitable solution and preferably sprayed onto a heated insulating substrate to form the finished product. The example sensor, capable of selective detection of H.sub.2 S in air and a sensitivity of less than 1 PPM (part per million), is comprised of a platinum activated alumina, tin oxide, and zeolite molecular sieve material.

Abstract: One-component epoxy resin coating materials comprising(A) an epoxy resin or a mixture of epoxy resins,(B) as hardener for the epoxy resin at least one aromatic dicarboxylic acid dihydrazide or a triazine compound of the formula I ##STR1## (R=alkylamino or dialkylamino having 1 or 2 carbon atoms in the alkyl moieties, phenylamino or hydrazino) and(C) an anti-sagging agent or an inorganic filler or a mixture of anti-sagging agent and an inorganic filler, are used for the coating of fixed resistors. The resultant coatings exhibit good heat, moisture and cracking resistance.

Abstract: A generic chip carrier is described which includes, as integral parts, a voltage bus and a plurality of terminating resistors connected between the voltage bus and signal traces on the carrier. The voltage bus wraps around the chip carrier, thus providing a large area of metal. Through the selective use of the terminating resistors, the generic carrier can be customized for a particular type of integrated circuit, i.e., source or destination termination of signals. A signal trace may be customized by "opening" the terminating resistor with a current spike applied by a standard electrical probe. Spare bonding pads and terminating resistors are placed at intervals about the periphery of the carrier as insurance against defective or mistakenly removed terminating resistors.