Abstract: Composition containing a chlorinated organotin derivative and a polyfluoroalkenyl compound and/or a halo polyfluoroalkenyl compound useful for CVD formation of fluorine doped tin oxide coatings.

Abstract: A method for producing flat panels for TFT or plasma display applications includes forming a sputter source within a sputter coating chamber, the source having at least two electrically mutually isolated stationery bar-shaped target arrangements. A controlled magnet arrangement provided under each target with a time-varying magnetron field.

Abstract: The present invention is for a transparent conductive film of nitrogen-containing indium tin oxide 5 nm to 100 &mgr;m thick formed on a substrate. The process for producing the transparent film includes exciting the surface of the substrate in a vacuum and depositing vaporized indium tin oxide on the surface of the substrate. The surface may be excited with irradiation with an ion beam. The indium tin oxide may be deposited through vacuum deposition, laser abrasion, ion plating, ion beam deposition, or chemical vapor deposition. Vapor deposition of indium tin oxide may be performed using a sintered product of indium oxide and tin oxide or with indium metal and tin metal.

Abstract: A tensile force is applied to at least a surface of a film to which a conductive material is applied within an elastic limit by a tensile force applying means, the conductive material is applied to a first surface of the film by a coating means in a tensioned state, and thereafter the tensile force is released by a tensile force releasing means to form the film having a conductive sheet for a touch-panel. Preferably, the tensile force applying means is a barrel-shaped roller.

Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.

Abstract: A process for depositing an antimony-containing coating upon a surface of a heated glass substrate includes dissolving an antimony halide in an organic solvent to form an antimony halide containing solution. This solution is then vaporized to form a gaseous antimony precursor. The gaseous antimony precursor is then directed toward and along the surface of the heated glass substrate. The antimony precursor is reacted at or near the surface to form an antimony containing coating.

Abstract: A whole organic EL display fabricating apparatus is provided inside a vacuum chamber. In this case, a first patterning unit B through a third patterning unit D for sequentially forming luminescent layer patterns of GREEN, BLUE, and RED on an anode pattern on a strip-shaped flexible substrate 1, and a fourth patterning unit E for forming a cathode pattern on the subsequent stage are provided. The first patterning unit B is provided with a first cooling can 21 and a vacuum vapor deposition unit below for forming the luminescent layer pattern of GREEN. The structures of the second patterning unit through the fourth patterning unit are similar to that of the first patterning unit. In fabricating a display, the substrate 1 is caused to travel from the first cooling can 21 toward a fourth cooling can 64 by the roll-to-roll system.

Abstract: A light quantity correction filter that can implement the desired transmittance distribution precisely and easily without complicating an exposure system, a method of making the light quantity correction filter, and a method of manufacturing a color cathode ray tube using the light quantity correction filter are provided.

Abstract: A method for applying a light-blocking layer between a photoconducting layer and a mirror when making an optically addressable spatial light modulator (OASLM) using a chemical vapor deposition process. The light-blocking layer and the photoconducting layer are applied in a shared process step in which both the thickness and composition of the photoconducting layer to be applied to the transparent electrode, as well as the thickness and composition of the light-blocking layer to be applied to the photoconducting layer are determined by a time-related change of the variation of the gas composition during the deposition process. The structure of the OASLM can be optimally adapted to a desired purpose.

Abstract: An anti-reflection high conductivity multi-layer coating for CRT products includes three layers coating created by vacuum sputtering and a fourth layer coating created by wet coating process. A first layer, nearest to the substrate, is made of a transparent conductive oxide material having a refractive index within the approximating range of 1.85 to 2.1 at a wavelength of 520 nm. The second layer is formed from an oxide material having a refractive index within the range of 1.45 to 1.50 at a wavelength of 520 nm. The third layer is formed of an oxide material having a refractive index within the range of 1.85 to 2.2 at a wavelength of 520 nm. The fourth layer has a refractive index within the range of 1.45 to 1.55 at a wavelength of 520 nm.

Abstract: A method for producing flat panels for TFT or plasma display applications includes forming a sputter source within a sputter coating chamber, the source having at least two electrically mutually isolated stationery bar-shaped target arrangements. A controlled magnet arrangement provided under each target with a time-varying magnetron field.

Abstract: A ceramic article having a base made of an insulating ceramic material, the insulating ceramic material includes a metal element, and a conductive surface layer provided on the base, wherein the conductive surface layer includes carbon atoms as its main component, and wherein the conductive surface layer further includes silicon atoms and atoms of the metal element present in the insulating ceramic material.

Abstract: A light quantity correction filter that can implement the desired transmittance distribution precisely and easily without complicating an exposure system, a method of making the light quantity correction filter, and a method of manufacturing a color cathode ray tube using the light quantity correction filter are provided.

Abstract: In a phase-change recording medium, a recording medium is provided with a barrier layer including Ge--N, Ge--N--O between a recording layer and a dielectric protective layer in order to prevent a chemical reaction and an atom diffusion between the recording layer and the dielectric protective layer. A barrier material can be also applied to the protective layer itself. Thereby, it is possible to considerably suppress a reduction of a reflectivity and a reduction of a signal amplitude due to the repeat of recording and erasing, such reductions being observed in a conventional phase-change optical information recording medium, and thereby the number of overwriting times can be increased.

Abstract: An object such as an automobile part, an image forming apparatus part, a bicycle part, other machine parts, a sport article or its part, a toy or its part, or a rain article or its part has a portion to be in contact with a contact object. The contact portion is made of at least one kind of material selected from a group including polymer material such as resin or rubber as well as glass, and the contact portion has a surface entirely or partially coated with a carbon film (typically, a DLC film) having a wear resistance as well as at least one of a lubricity, a water repellency and a gas barrier property. The carbon film is formed on the object with a good adhesion.

Abstract: A method of depositing a silicon oxide coating on a hot glass substrate by chemical vapor deposition which comprises contacting the substrate with a silane and a phosphorus or boron ester, for example, triakylphosphite or trialkylborate, preferably triethylphosphite. Preferably, the method is performed during the formation of glass by the float glass production process.

Abstract: A uniform film of sapphire and tungsten is deposited onto a surface of a substrate using the ionized cluster beam ("ICB") apparatus. During ICB deposition, a tungsten crucible containing sapphire is heated until a vapor of sapphire and tungsten is formed. The tungsten crucible is heated to form a tungsten vapor, which causes the crucible material to mix with the sapphire, thereby forming a vapor mixture of sapphire and tungsten. The vapor is ejected through a small nozzle into a vacuum region. The resulting adiabatic expansion of the vapor promotes formation of atomic clusters. Some of the clusters are ionized, and electrons are stripped off the clusters. The clusters are accelerated toward the substrate, which is also within the vacuum region. The clusters impact the surface of the substrate, where they are deposited to form the uniform sapphire/tungsten film. The film is deposited in an sapphire (aluminum oxide)/tungsten ratio of 2:1. The film has a relatively high index of refraction of approximately 2.

Abstract: A fixture for releasably retaining at least one lenticular article in a fixed orientation while the article(s) is/are being subjected to one or more applications of a thin film coating process comprises a perforated metallic sheet having at least one aperture therein adapted to receive the article(s). The thickness of the metal fixture bears a ratio to the size of the articles being retained that is within a particular range. A method for applying thin film optical coatings to lenticular articles utilizing such a fixture is also disclosed.

Abstract: A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.

Abstract: Fabrication of an electroluminescent device having a high-quality luminescent layer is disclosed. The device emits intense blue light. A first electrode layer, a first dielectric layer, the luminescent layer, a second dielectric layer, and a second electrode layer are successively formed on a glass substrate. At least the exit side of the device is made from an optically transparent material. A first gaseous source material of a group II element belonging to group II of the periodic table, a second gaseous source material of a group VIB element belonging to group VIB, and a third gaseous source material of an element forming the luminescent center of the luminescent layer are supplied into a reaction furnace through first, second, and third gas supply tubes, respectively, and caused to react with each other. Thus, the luminescent layer is formed by chemical vapor deposition. The first material acts as a base material from which the luminescent layer is formed.

Abstract: A method of manufacturing surface relief holograms wherein an original surface relief hologram in the form of an endless loop or a drum is continuously coated with a radiation-curable resin. After curing, the resin bears a replica of the original hologram and it is continuously drawn off from the original as a sheet or film. The replica film becomes a hot-stamping foil when formed in contact with a carrier film, metallized, and coated with a hot-stamping adhesive.

Abstract: A process for coating an exterior of a lamp is disclosed, which comprises performing the coating in a microwave reactor by a microwave plasma CVD process and coupling microwave radiation into the microwave reactor with a microwave power greater than or equal to a power threshold value at which a plasma with reduced microwave permeability is ignited in the microwave reactor.

Abstract: Electron transporting layers comprised of organic free radicals are disclosed for use as the electron transporting layer in multi-layer structures that are useful for fabricating organic light emitting devices (OLEDs). For example, the multi-layer structure may include an electron transporting layer containing an organic free radical comprised of a multi-aryl-substituted cyclopentadienyl free radical of formula (I): ##STR1## wherein Ar.sub.1, Ar.sub.2, Ar.sub.3, Ar.sub.4 and Ar.sub.5 each are, independently of the other hydrogen, an alkyl group or an unsubstituted or substituted aromatic group. More specifically, included among these materials are those which are comprised of an electron transporting material based on, the pentaphenylcyclopentadienyl Cp.sup..phi..

Abstract: A process for depositing an adherent polycrystalline diamond thin film on a glass substrate, by chemical vapor deposition (CVD) at 1 to 15 torr and low temperatures of the substrate of between about 350 to 600.degree. C. using hydrogen and methane and optionally carbon dioxide. The substrate has diamond particles deposited on it or is polished with diamond particles prior to CVD. The process produces films which are clear and adherent.

Abstract: A process for production of a glass substrate coated with a patterned Nesa glass membrane which comprises, in sequence:the first step of coating a photoresist on a glass substrate to form a photoresist membrane, exposing the membrane to electromagnetic waves through a mask and then developing the photoresist to form a patterned photoresist membrane on the glass substrate;the second step of forming a Nesa glass membrane on the entire surface of the glass substrate thus provided with the patterned photoresist membrane; andthe third step of removing the patterned photoresist membrane together with the Nesa glass membrane thereon from the glass substrate to leave a patterned Nesa glass membrane on the glass substrate.

Abstract: A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

Abstract: A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

Abstract: The invention provides a method of producing tranparent and conductive ultrathin films of metal carbide or metal nitride on a glass, ceramics or organic polymer substrate, which comprises the steps of exciting a surface of said substrate by irradiating said surface with a carbon or nitrogen ion beam; simultaneously vapor-depositing a transition metal onto said surface to form a carbide or nitride layer; and terminating the excitation and the vapor-deposition when the thickness of the metal carbide or nitride layer is in the range of 1 nm to 50 nm, and the light permeability of the metal carbide or nitride layer is in the range of 30% to 90%, wherein the conductivity of the metal carbide or nitride layer is in the range of 1 k.OMEGA./.quadrature. To 100 k.OMEGA./.quadrature..

Abstract: A method of pyrolytically forming a silica-containing coating on a glass substrate at an elevated temperature. Silane, oxygen, a radical scavenger gas and a carrier gas are combined as a precursor mixture, and the precursor is directed toward and along the surface of the heated glass substrate. The presence of the radical scavenger allows the silane, which is pyrophoric, to be premixed with the oxygen without undergoing ignition and premature reaction at the operating temperatures. The radical scavenger further provides control of and permits optimization of the kinetics of the chemical vapor deposition (CVD) reaction on the glass. A preferred combination of precursor materials includes monosilane and oxygen, with ethylene as the radical scavenger, and including nitrogen as a carrier gas.

Abstract: Surface haze resulting from a rough surface of a substrate e.g. a fluorine doped tin oxide coated glass piece is reduced by coating the rough surface with a smooth surface coating of sufficient thickness to smooth out the rough surface e.g. coating the tin oxide layer with a silica film having a thickness of about 100 to 2000 Angstroms.

Abstract: Liquid methyltin halide compositions and their use as intermediates in chemical synthesis and as precursors for forming tin oxide coatings on substrates are disclosed.

Abstract: A method for producing a coated glass or ceramic article having a surface formed primarily from silicates, comprising the steps of contacting the uncoated glass or ceramic article in a gaseous atmosphere at a pressure of at least 700 Tort with a silane and a carbon source for a sufficient time at a temperature of less than 35.degree. C. to form a coating on and in the glass surface, wherein the coating comprises a silicon-carbide-containing layer having a thickness of at least 100 angstroms and containing 35 to 55 atom % carbon, between 15 and 30% silicon, no more than 10% elements other than silicon, oxygen, and carbon, and the remainder oxygen. Glass and ceramic surfaces having the indicated compositions are also part of the invention.

Abstract: Fluorine doped tin oxide coatings on glass are prepared by providing a uniform, vaporized reactant mixture containing an organotin compound, HF, water and oxygen, and delivering the reactant mixture to the surface of the hot ribbon of glass, where the compounds react to form the fluorine doped tin oxide coating. The fluorine doped tin oxide coatings applied in accordance with the invention exhibit lower sheet resistance, and improved uniformity in sheet resistance over the coated surface of the glass.

Abstract: A conjugated poly(p-phenylene vinylene) is manufactured by means of CVD and using simple monomers. Such a polymer is particularly adaptable for use as an active layer in electroluminescent devices, such as a light-emitting diode.

Abstract: A method of applying a protective coating (15) onto a surface (17) to be coated. The method includes providing a surface (17) to be coated, where the surface to be coated can be selected from a group consisting of a ceramic, a float glass, an artistic glass, a sandblasted glass, and a Pyrex glass product. The method also includes enclosing the surface to be coated in a temporary chamber. A step of introducing a silane and a carbon source into the temporary chamber is also included. The method further includes reacting the silane and the carbon source on the surface to be coated to form a surface coating (15) thereon.

Abstract: The coated substrate product finds particular application in eyeglass and sunglass lenses, architectural glass, analytical instrument windows, automotive windshields and laser bar code scanners for use in retail stores and supermarkets. The product has greatly improved wear resistance for severe abrasive environments and comprises a substantially optically transparent substrate, one or more chemically vapor deposited interlayers bonded to the substrate and a chemically vapor deposited outer layer of optically transparent or substantially optically transparent hard and low friction material bonded to the interlayer and away from the substrate.

Abstract: A method of manufacturing a semiconductor device according to the present invention comprises the steps of forming a conductive film on an insulating film, forming growth nucleuses containing any of elements in group IIIb, group IVb, group Vb and group VIIb that does not constitute the conductive film and the insulating film on the surface of the conductive film, and growing a semiconductor selectively on growth nucleuses.

Abstract: A method for applying a coating to a substrate comprises a gas distributor having an outlet disposed adjacent to the substrate for directing a gaseous reactant mixture to the surface of the substrate. A plurality of drop tubes are provided which communicate with and are spaced along the length of the distributor for supplying the gaseous reactant mixture to the distributor. The uniformity of the thickness of the coating which is applied to the substrate along its width is determined. Finally, one or more of the reactants or an inert gas is supplied to one or more of the drop tubes to alter the concentration of one or more of the reactants in the gaseous reactant mixture flowing through one or more drop tubes. The rate of deposition of the coating in the proximity of such drop tubes is thereby altered to improve the uniformity of the coating deposited.

Abstract: One method for fabricating solderable pads (406) onto a substrate (220) for direct chip attachment uses a multilayer metallization coating (500). The coating has a bottom layer (202) of indium-tin oxide, with an intermediate layer (204) of copper and a top layer (206) of indium-tin oxide. A masking layer (208) is deposited on the active display area (402) of the substrate, leaving the bonding pads uncovered. The revealed bonding pads are then plasma etched, using the polyimide as an etch resist, and the top layer of ITO is selectively removed to reveal the underlying copper layer. The exposed copper layer (204) is then plated with a solderable metal to the desired thickness to form bonding pads that may be used with direct chip attachment schemes.

Abstract: In a method of manufacturing a thin film, evaporated particles are generated by a vapor source and are clustered. The clustered evaporated particles are deposited onto a substrate in a vacuum atmosphere without ionizing the particles. A partial pressure of water in the vacuum atmoshpere is controlled to not more than 5.times.10.sup.-6 Torr. A temperature of the substrate is maintained to be 150.degree. C. or lower. A film according to this method has a high adhesion characteristics and a high mechanical strength without heating the substrate to a high temperature and without damaging the substrate by ions.

Abstract: A conductive polymer comprises a silicon-containing polymer having, in the main chain thereof, Si--Si bonds or both Si--Si bonds and C--C multiple bonds, and ferric chloride doped in said polymer through vapor phase doping. A method for preparing such a conductive polymer is also described.

Abstract: A method for fabricating solderable pads (106) onto a glass substrate (101) includes the step of depositing a seed metallization layer (step 406) after the polyimide layer is cured (step 404) but prior to buffing the alignment layer (step 414). The seed metallization layer can done by, for example, sputter depositing indium-tin, tin or copper.

Abstract: The present invention relates to the production of hydrogen fluoride dopant source gases for use in the production of conductive coatings on a substrate. More specifically, a fluorocarbon source gas is decomposed in the presence of oxygen to yield HF which is passed to a deposition furnace wherein a fluoride doped metal oxide coated glass substrate is prepared.

Abstract: A method for coating a moving substrate provides a coating having a chemical composition which varies continuously from the interface with the substrate to the opposite surface of the coating. The method involves directing a vapor coating composition toward a substrate surface and moving portions of the vapor in opposite directions. A vapor coating mixture may include a tin-containing precursor and a silicon-containing precursor. An accelerant, e.g. a phosphorus-containing precursor, may be used with the metal-containing precursors to increase the deposition rate of the coating. The coating deposited on the substrate has regions of continuously varying weight percent of silicon oxide and tin oxide as the distance from the substrate-coating interface increases, with the surface of the coating farthest from the substrate-coating interface being predominantly tin oxide.

Abstract: A method is disclosed for depositing a substance on a substrate, including the following steps: providing the substrate in a deposition chamber, providing in the chamber a vapor of the substance, providing a buffer gas in the chamber, and directing a light beam at the substrate to control deposition of the substance by causing light induced drift.

Abstract: A process for forming a thin film of amorphous silicon of a uniform thickness on a relatively large glass plate. The process comprising forming a thin film of amorphous silicon on an insulating substrate by a plasma enhanced chemical vapor deposition process while intermittently generating a high frequency discharge. The duration of each discharge is set shorter than the time period necessary for the DC bias voltage, which is generated on the high frequency-applying electrode side, to attain a saturated value.

Abstract: The present invention relates to a method for the interconnection/repair of circuits on a transparent substrate at ambient temperature using laser induced chemical vapor deposition.

Abstract: A method of manufacturing a flexible amorphous silicon solar cell includes the steps of: a) coating a PI varnish on a glass substrate; b) imidizing the PI varnish film; c) vacuum-depositing a metal film on the PI film; d) vacuum-depositing an amorphous silicon film on the metal film; e) vacuum-depositing a transparent conducting film on the amorphous silicon film; and f) separating the PI film from the glass substrate. The method also provides for preparing the PI varnish by the steps of: 1) preparing a mixed solution of 60-100% by weight aprotic solvent, and 0-40% by weight aromatic solvent; 2) adding into the mixed solution in a mole ratio of 1:9 two aromatic diamines; and 3) further adding in the mixed solution in a mole ratio of 1:5 two aromatic dianhydrides.

Abstract: The deposition of a copper-containing layer on a substrate by decomposing, particularly by a CVD process, a compound corresponding to the formula (I)RO--Cu--L (I)in whichR represents a 1-aryl lower alkyl group, a branched, optionally substituted alkyl group with 3 to 6 carbon atoms, or an aryl group, andL represents (C1 to C6-alkyl)isonitrile, aryl isonitrile, carbon monoxide, dialkylaminodifluorophosphane, organyl difluorophosphane, triaryl phosphane, trialkyl phosphane, trifluorophosphane, or trichlorophosphane,is described, together with previously unknown compounds of formula (I) which may be used in the process.

Abstract: The present invention refers to the deposition of thin film coatings produced by plasma-activated chemical vapor deposition of volatile fluorinated cyclic siloxanes of the structure [RR'SiO].sub.x, in which R is a hydrocarbon radical with 1-6 carbon atoms, R' is a fluorinated hydrocarbon radical with 3-10 carbon atoms, the carbon in the alpha and beta positions with respect to the silicon atom is hydrogenated and x is 3 or 4.