Abstract: An apparatus for producing an SiC substrate, by which an SiC substrate having a thin base substrate layer is able to be produced, while suppressing deformation or breakage, includes a main container which is capable of containing an SiC base substrate, and which produces a vapor pressure of a vapor-phase species containing elemental Si and a vapor-phase species containing elemental C within the internal space by means of heating; and a heating furnace which contains the main container and heats the main container so as to form a temperature gradient, while producing a vapor pressure of a vapor-phase species containing elemental Si within the internal space. The main container has a growth space in which a growth layer is formed on one surface of the SiC base substrate, and an etching space in which the other surface of the SiC base substrate is etched.

Abstract: Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

Abstract: The present disclosure is directed to antennas for transmitting and/or receiving electrical signals comprising a MXene composition, devices comprising these antennas, and methods of transmitting and receiving signals using these antennas.

Abstract: A method includes forming a gate dielectric layer on a semiconductor region, and depositing a first aluminum-containing work function layer using a first aluminum-containing precursor. The first aluminum-containing work function layer is over the gate dielectric layer. A second aluminum-containing work function layer is deposited using a second aluminum-containing precursor, which is different from the first aluminum-containing precursor. The second aluminum-containing work function layer is deposited over the first aluminum-containing work function layer. A conductive region is formed over the second aluminum-containing work function layer.

Abstract: A semiconductor device includes a fin structure protruding from an isolation insulating layer disposed over a substrate and having a channel region, a source/drain region disposed over the substrate, a gate dielectric layer disposed on the channel region, and a gate electrode layer disposed on the gate dielectric layer. The gate electrode includes a lower portion below a level of a top of the channel region and above an upper surface of the isolation insulating layer, and a width of the lower portion is not constant.

Abstract: An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

Abstract: A cutting tool according to one aspect of the present disclosure includes a substrate and a diamond layer coating the substrate. A cutting tool according to one aspect of the present disclosure includes a rake face, a flank contiguous to the rake face, and a cutting edge configured by a ridge formed by the rake face and the flank. The rake face has a first rake face and a second rake face located between the first rake face and the flank. The second rake face and a surface of the substrate located on the side of the rake face form a negative angle. The second rake face is formed at the diamond layer.

Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.

Abstract: The present invention provides a method for controlling the internal diameter of nanopores to afford nanopore membranes with a zero-order rate of release of a therapeutic agent.

Abstract: A method of manufacturing a semiconductor device, includes: forming a film containing a predetermined element on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a first precursor containing the predetermined element and a halogen group to the substrate; supplying a second precursor containing the predetermined element and an amino group to the substrate; and supplying a reducing agent not containing halogen, nitrogen and carbon to the substrate.

Abstract: Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating (a) through (d). Increased growth rate and 100% step coverage and conformality are attained.

Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

Abstract: Porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's), and to processes for fabricating them. Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, the nuclear fuel may be deposited inside of a highly porous skeletal structure made of, for example, reticulated vitreous carbon foam.

Abstract: The invention relates to a protective coating, having the chemical composition CaSibBdNeOgHlMem, wherein Me is at least one metal of the group consisting of {Al, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Y, Sc, La, Ce, Nd, Pm, Sm, Pr, Mg, Ni, Co, Fe, Mn}, with a+b+d+e+g+l+m=1. According to the invention, the following conditions are satisfied: 0.45?a?0.98, 0.01?b?0.40, 0.01?d?0.30, 0?e?0.35, 0?g?0.20, 0?l?0.35, 0?m?0.20. The invention relates also to a coated member having a protective coating, as well as to a method for producing a protective coating, in particular a multilayer film for a member.

Abstract: One exemplary embodiment includes a process for forming a hard carbide coating onto a low chromium-containing steel article via a chemical deposition process carried out on a particulate mix, in which molybdenum in the form of a compound FeMo or titanium in the form of a compound FeTi, or a mixture of FeMo and FeTi, may be added to the particulate mix used to form the coating.

Abstract: The invention relates to a method for coating, by means of a chemical vapour deposition (CVD) technique, a part with a coating (PAO) for protecting against oxidation. The method enables the preparation of a refractory coating for protecting against oxidation, having a three-dimensional microstructure, which ensures the protection against oxidation at a high temperature, generally at a temperature above 1200° C., for materials that are sensitive to oxidation, such as composite materials, and in particular carbon/carbon composite materials.

Abstract: Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.

Abstract: An apparatus for atomic layer deposition of a material on a moving substrate comprises a conveying arrangement for moving a substrate along a predetermined planar or curved path of travel and a coating bar having at least one precursor delivery channel. The precursor delivery channel conducts a fluid containing a material to be deposited on a substrate toward the path of travel. When in use, a substrate movable along the path of travel defines a gap between the outlet end of the precursor delivery channel and the substrate. The gap defines an impedance Zg to a flow of fluid from the precursor delivery channel. A flow restrictor is disposed within the precursor delivery channel that presents a predetermined impedance Zfc to the flow therethrough. The restrictor is sized such that the impedance Zfc is at least five (5) times, and more preferably at least fifteen (15) times, the impedance Zg. The impedance Zfc has a friction factor f.

Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.

Abstract: The invention relates to a transparent glass substrate, associated with a transparent electro-conductive layer capable of constituting an electrode of a photovoltaic cell and composed of a doped oxide, characterized by the interposition, between the glass substrate and the transparent electroconductive layer, of a mixed layer of one or more first nitride(s) or oxynitride(s), or oxide(s) or oxycarbide(s) having good adhesive properties with glass, and one or more second nitride(s) or oxynitride(s) or oxide(s) or oxycarbide(s) capable of constituting, possibly in the doped state, a transparent electroconductive layer; a method for producing this substrate; a photovoltaic cell, a tempered and/or curved glass, a shaped heating glass, a plasma screen and a flat lamp electrode having this substrate.

Abstract: Provision of a laminate excellent in weather resistance and gas barrier property and also excellent in adhesion between layers and its durability; and a process for producing such a laminate. A laminate which comprises a substrate sheet containing a fluororesin, and a gas barrier layer containing, as the main component, an inorganic compound composed of a metal and at least one member selected from the group consisting of oxygen, nitrogen and carbon, the gas barrier layer being directly laminated on at least one surface of the substrate sheet; wherein in a C1s spectrum of a surface of the substrate sheet on which the gas barrier layer is laminated, that is measured by X-ray photoelectron spectroscopy, the position of the highest peak present within a binding energy range of from 289 to 291 eV is present within a range of from 290.1 to 290.6 eV.

Abstract: A brake disk formed of a light weight ceramic and ceramic composite materials, the brake disk having a coating overlying at least a portion of the brake disk. The brake disk includes parallel surfaces wherein at least a portion of the parallel surfaces are coated with a coating material to increase wear resistance and decrease corrosion. The coating over the brake disk includes multiple layers of the coating material, wherein the coating material includes coating material particles configured to construct a pattern of repetition that is consistent with a lattice structure when applied over the parallel surfaces of the brake disk.

Abstract: Described are methods for deposition of metal-aluminum films using metal PCAI precursors and aluminum precursors. Such metal-aluminum films can include metal aluminum carbide, metal aluminum nitride and metal aluminum carbonitride films. The aluminum precursors may be alkyl aluminum precursors or amine alanes.

Abstract: Described are methods for deposition of metal-aluminum films using metal amidinate precursors and aluminum precursors. Such metal-aluminum films can include metal aluminum carbide, metal aluminum nitride and metal aluminum carbonitride films. The aluminum precursors may be alkyl aluminum precursors or amine alanes.

Abstract: An approach is provided for coating a golf club head with a material. The approach involves securing a first golf club head component to a second golf club head component using an adhesive, resulting in a golf club head main body having an exterior surface. The approach further includes physical vapor depositing at least one layer on at least a portion of the exterior surface of the golf club head main body at a temperature less than a melting point of the adhesive.

Abstract: A mass spectrometer includes an ion source, which includes a coating or surface formed of a metallic carbide, a metallic boride, a ceramic or DLC, or an ion-implanted transition metal.

Abstract: A brake disk including carbon steel, stainless steel or a ceramic composite material and coated with a coating material that is wear and corrosion resistant and when applied properly allows for the coated surface to have a variety of “textured” appearances. For example, the coated surface can be made to look like woven carbon fiber. The aesthetically pleasing, wear and corrosion resistant coating overlays wear surfaces and portions of the brake disk that will be, in many cases, visible when the brake disk is installed on the vehicle. The coating includes a first layer of a metal, such as a pure titanium metal, and a second layer that can include a Nitride, Boride, Carbide or Oxide of the metal used in the first layer. The coating can be applied using a physical vapor deposition source such as a cathodic arc source with a controlled gas atmosphere.

Abstract: In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.

Abstract: A process and apparatus for depositing a ceramic coating, such as a thermal barrier coating (TBC) for a gas turbine engine component. The process deposits a coating whose composition includes multiple oxide compounds and a carbon-based constituent, e.g., elemental carbon, carbides, and carbon-based gases. The process uses at least one evaporation source to provide multiple different oxide compounds and at least one carbide compound comprising carbon and an element. The evaporation source is evaporated to produce a vapor cloud that contacts and condenses on the component surface to form the ceramic coating, and particularly so that the coating comprises the oxide compounds, an oxide of the element of the carbide compound, and the carbide compound and/or a carbon-containing gas. The process is carried out with an apparatus comprising a coating chamber in which the evaporation source is present, and a device for evaporating the evaporation source.

Abstract: This invention relates to a preparation method and equipment of graphite and catalyst composite for a kind of synthetic diamond. Firstly, graphite particles shall be placed into the heating chamber for pre-heating; secondly, the heated graphite particle will be fed into the coating room with vibrator or agitator and steam of carbonyl metal complex is input for coating; finally, the coated graphite particles are fed into a cooling and passivation room for cooling and passivation of the discharging materials or enter a next round of heating and coating. The surface of each graphite particle is plated with metal layer which can promote the crystal nucleus growing into perfect diamond crystal.

Abstract: The invention relates to a method for producing a coated substrate body by chemical vapor deposition at least on one layer made of a carbonitride of a metal of IVa-Vla-groups of the periodic table, wherein a monocyclic hydrocarbon is used in the gas atmosphere during the deposition, in addition to a nitrile. According to the invention, the thus produced coated substrate body has a high degree of hardness and is used, preferably, in cutting operations where the cutting speeds are ?250 m/min.

Abstract: A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Abstract: A method for coating a tool or tool part, includes providing a base structure of the tool or the tool part at a temperature of 850° C. to 950° C. and applying at least one layer to the base structure. One or more layers of the at least one layer is formed of a metal carbonitride of composed of at least one of titanium, zirconium, hafnium, vanadium, niobium, tantalum and chromium. The one or more layers of the at least one layer is deposited by a deposition of a gas containing methane, nitrogen and at least one metal compound. After beginning the applying, the temperature is increased by at least 40° C. to an increased temperature and the deposition is continued for a time at the increased temperature.

Abstract: A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.

Abstract: A tool or wear part has a coating formed over a substrate. The coating includes at least one sequence of a ductile nano-layer located between two hard layers, though the coating may have several such sequences created by alternating ductile nano-layers with hard layers, with adjacent sequences sharing a hard layer. The various hard layers may differ in composition from one another, as can the ductile nano-layers. An optional adhesion layer may be provided between the substrate and the sequence, and an optional top layer may be provided over the outermost hard layer. The various layers may be deposited by physical vapor deposition in a single chamber.

Abstract: An apparatus for atomic layer deposition of a material on a moving substrate comprises a conveying arrangement for moving a substrate along a predetermined planar or curved path of travel and a coating bar having at least one precursor delivery channel. The precursor delivery channel conducts a fluid containing a material to be deposited on a substrate toward the path of travel. When in use, a substrate movable along the path of travel defines a gap between the outlet end of the precursor delivery channel and the substrate. The gap defines an impedance Zg to a flow of fluid from the precursor delivery channel. A flow restrictor is disposed within the precursor delivery channel that presents a predetermined impedance Zfc to the flow therethrough. The restrictor is sized such that the impedance Zfc is at least five (5) times, and more preferably at least fifteen (15) times, the impedance Zg. The impedance Zfc has a friction factor f.

Abstract: In a method of producing a layer arrangement, a substantially carbon-comprising, electrically conductive carbon layer is formed. A protective layer is formed on the carbon layer. An electrically insulating layer is formed on the protective layer, the protective layer protecting the carbon layer from damage during the formation of the electrically insulating layer. Furthermore, a layer arrangement is provided, having a substantially carbon-comprising, electrically conductive carbon layer, a protective layer formed on the carbon layer, and an electrically insulating layer formed on the protective layer, the protective layer being used to avoid damage to the carbon layer by the electrically insulating layer.

Abstract: The present disclosure is directed to cutting tools. The disclosed cutting tools may have a wear resistant coating on a substrate. The substrate may have hard particles cemented in a binder phase. The binder may have a near-surface concentration gradient of at least one platinum group element and/or rhenium. Processes for producing cutting tools are also disclosed.

Abstract: A process and apparatus for depositing a ceramic coating, such as a thermal barrier coating (TBC) for a gas turbine engine component. The process deposits a coating whose composition includes multiple oxide compounds and a carbon-based constituent, e.g., elemental carbon, carbides, and carbon-based gases. The process uses at least one evaporation source to provide multiple different oxide compounds and at least one carbide compound comprising carbon and an element. The evaporation source is evaporated to produce a vapor cloud that contacts and condenses on the component surface to form the ceramic coating, and particularly so that the coating comprises the oxide compounds, an oxide of the element of the carbide compound, and the carbide compound and/or a carbon-containing gas. The process is carried out with an apparatus comprising a coating chamber in which the evaporation source is present, and a device for evaporating the evaporation source.

Abstract: The present embodiments relate methods of preparing metal carbides, for example some embodiments relate to methods of preparing metal carbides that do not contain the formation of an intermediate oxide compound. Some embodiments relate to methods that do not employ hydrocarbons in the reaction. Some embodiments relate to a method of preparing metal carbides that involves citrate gel precursors and a non-hydrocarbon gas but does not use a hydrocarbon gas, does not form an oxide intermediate species and does not produce carbon monoxide. In some embodiments, the metal carbides are transition metal carbides.

Abstract: A process for producing a wear-resistant coating and to a wear-resistant coating on predetermined surfaces (2) of machine or engine parts (1) consisting of a sintered material which are exposed to frictional wear, for fuel feed units in particular, comprising at least one metal-free amorphous hydrocarbon layer (5) with sp2- and sp3-hybridized carbon applied to the predetermined surface (2) of the machine or engine part (I) for reducing friction and increasing the wear resistance of the predetermined surface (2) of the machine or engine part (1), and at least one intermediate layer of a metal-containing hydrocarbon layer formed between the predetermined surface of the machine or engine part and the amorphous hydrocarbon layer wherein the metal is a combination of W, Ti, Hf and Ge.

Abstract: This invention relates to a process for preparing a substrate-supported aligned carbon nanotube film including: synthesizing a layer of aligned carbon nanotubes on the substrate capable of supporting nanotube growth, applying a layer of a second substrate to a top surface of aligned carbon nanotube layer, removing said substrate capable of supporting nanotube growth to provide an aligned carbon nanotube film supported on said second substrate.

Abstract: A transparent conductive film containing magnesium, at least one element (A) selected from the group consisting of carbon, silicon and boron, plus oxygen, and hydrogen. For example, this transparent conductive film may be manufactured by forming a film containing magnesium and an element (A) on a substrate and holding the film in an atmosphere containing water, which forming uses a target containing magnesium and a target containing the element (A) being at least one selected from the group consisting of carbon, silicon and boron.

Abstract: Methods for manufacturing porous nuclear fuel elements for use in advanced high temperature gas-cooled nuclear reactors (HTGR's). Advanced uranium bi-carbide, uranium tri-carbide and uranium carbonitride nuclear fuels can be used. These fuels have high melting temperatures, high thermal conductivity, and high resistance to erosion by hot hydrogen gas. Tri-carbide fuels, such as (U,Zr,Nb)C, can be fabricated using chemical vapor infiltration (CVI) to simultaneously deposit each of the three separate carbides, e.g., UC, ZrC, and NbC in a single CVI step. By using CVI, a thin coating of nuclear fuel may be deposited inside of a highly porous skeletal structure made, for example, of reticulated vitreous carbon foam.

Abstract: A method for forming a metal carbide or metal carbonitride film on a substrate using a vapor deposition process. The method includes comprises introducing a first process material, such as a film precursor, to the substrate followed by introducing a second process material, such as a film reducing agent, to the substrate, whereby plasma can be formed during the introduction of the second process material in order to assist reduction of the first process material on the substrate. Additionally, the temperature of the substrate is elevated to a value approximately equal to or greater than the decomposition temperature of the first process material in order to improve adhesion properties for the metal carbide or metal carbonitride film.

Abstract: An optical information recording medium that can simultaneously achieve both a high transmittance and high signal quality of an information layer, improve the reliability of long-term conservation, and reduce the manufacturing cost, and a manufacturing method thereof are provided. To achieve this, according to the present invention, in an optical information recording medium comprising at least one information layer on a substrate, at least one of the information layers has a recording layer and a dielectric layer, the recording layer contains Te, O, and M (M is one or a plurality of elements selected from Au, Pd, and Pt) as major components, the dielectric layer has a thermal conductivity of 0.01 W/K·cm or more, and the dielectric layer has an extinction coefficient of 0 through 1.0 inclusive.

Abstract: A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

Abstract: A method for producing a substrate having a carbon-doped titanium oxide layer, which is excellent in durability (high hardness, scratch resistance, wear resistance, chemical resistance, heat resistance) and functions as a visible light responding photocatalyst, is provided. The surface of a substrate, which has at least a surface layer comprising titanium, a titanium alloy, a titanium alloy oxide, or titanium oxide, is heat-treated in a combustion gas atmosphere of a gas consisting essentially of a hydrocarbon, or in a gas atmosphere consisting essentially of a hydrocarbon, such that the surface temperature of the substrate is 900 to 1,500° C.; or a combustion flame of a gas consisting essentially of a hydrocarbon, is directly struck against the surface of the substrate for heat treatment such that the surface temperature of the substrate is 900 to 1,500° C., thereby forming a carbon-doped titanium oxide layer, whereby the substrate having the carbon-doped titanium oxide layer is obtained.