By Decomposing Metallic Compound (e.g., Pack Process, Etc.) Patents (Class 427/252)
  • Patent number: 7419699
    Abstract: The present invention is a CVD process for forming a thin film which includes a step of recovering an organometallic compound component from an exhaust gas which has been conventionally discarded, and a purifying step of purifying the recovered organometallic compound to thereby eliminate a by-product formed in a film forming step by CVD. According to this process, the organometallic compound is recycled. As a recovering technique, any of the followings is employed: a technique in which the exhaust gas is cooled and is recovered as a recovered content; a technique in which the exhaust gas is brought into contact with a solvent to dissolve the organometallic compound in the solvent; and a technique in which the exhaust gas is brought into contact with an adsorbent to thereby adsorb the organometallic compound.
    Type: Grant
    Filed: March 10, 2005
    Date of Patent: September 2, 2008
    Assignee: Tanaka Kikinzoku Kogyo K. K.
    Inventors: Katsutsuga Kitada, Masayuki Saito
  • Patent number: 7416763
    Abstract: A process in which a base metal film is formed on the surface of a plastic film using a dry plating process, and a liquid containing an organic monomer is then brought in contact with the base metal film, thereby selectively forming a conductive organic polymer coating within any pinhole defects, and effectively filling the defects. A metal film is then formed on top of the base metal film using an electroplating process, thus forming a metal wet plating layer.
    Type: Grant
    Filed: June 16, 2004
    Date of Patent: August 26, 2008
    Assignee: Cookson Electronics Co.
    Inventors: Yuichi Kanda, Takashi Abe, Atsushi Tanaka, Keisuke Nishu
  • Publication number: 20080193642
    Abstract: A method to deposit a thin film on a flexible polymer substrate at room temperature comprising heating source vapor, which is vaporized by an evaporator, in a shower head in a reaction chamber so that the source vapor is thermally decomposed to be converted into the nano-size single phase; and depositing the source vapor in the nano-size single phase on the flexible polymer substrate which is not separately heated.
    Type: Application
    Filed: April 5, 2007
    Publication date: August 14, 2008
    Applicant: THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY
    Inventors: Soon-Gil Yoon, Nak-Jin Seong, Sang-Yong Jeon
  • Publication number: 20080193663
    Abstract: According to a method for forming a coating system on a turbine engine component substrate that comprises a nickel-based superalloy substrate having at least one refractory metal included therein, a nickel-based layer is formed on the substrate, the nickel-based layer comprising at least one active material selected from the group consisting of elemental silicon and a silicon compound. The at least one active material is then diffused into the substrate. An yttrium-modified platinum aluminide bond coating, or a MCrAlX bond coating, may be then formed over the active material-modified nickel-based layer.
    Type: Application
    Filed: February 8, 2007
    Publication date: August 14, 2008
    Inventors: Thomas E. Strangman, Derek Raybould, Devlin M. Gualtieri
  • Publication number: 20080166472
    Abstract: Methods for evaporating (e.g., subliming) a material in the solid state. In one aspect, a mass of the material in the solid state is mixed with a plurality of packing units, wherein each of the packing units comprises an inert material. The structure of each of the packing units, or the structure of an aggregate of the packing units, comprises a plurality of non-smooth features. In one example, Pro-Pak™ metal meshes can be used, which have a plurality of various types of non-smooth features, including sharp edges, corners, and/or protrusions. These non-smooth features are believed to physically disrupt crust formation during the evaporation process. Also disclosed are other methods for evaporating a material and methods for fabricating an organic thin-film device.
    Type: Application
    Filed: December 13, 2007
    Publication date: July 10, 2008
    Applicant: Universal Display Corporation
    Inventors: Peter B. MacKenzie, Hitoshi Yamamoto, Michaeal S. Weaver, Vadim I. Adamovich, Raymond Kwong
  • Patent number: 7378134
    Abstract: Disclosed is a method of forming a high-temperature corrosion-resistant film, which comprises placing a container containing a film-forming fine powder and a target member capable of being heated by an electric current heating process, in an atmosphere-controllable treatment chamber, and floating the fine powder and subjecting the target member to the electric current heating process to allow vapor of the fine powder generated by the heating to be diffused into the target member from a surface thereof so as to form a diffusion film layer, and allow the floated fine powder to be attached onto the surface so as to form a fine-powder film layer on the diffusion film layer. The target member may be masked to form the film only in a non-masked region of the target member. Alternatively, a specific region of the target member may be cooled at a temperature precluding the film formation to prevent the film from being formed in the specific region.
    Type: Grant
    Filed: February 9, 2004
    Date of Patent: May 27, 2008
    Assignee: Japan Science and Technology Agency
    Inventors: Toshio Narita, Shigenari Hayashi
  • Patent number: 7374701
    Abstract: A composition of (i) an organometallic precursor containing a hydrazine compound coordinating with a central metal thereof and (ii) an organometallic compound of a main group metal and a method of forming metal film or pattern using this composition.
    Type: Grant
    Filed: June 24, 2004
    Date of Patent: May 20, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Euk Che Hwang, Sang Yoon Lee, Young Hun Byun, Joon Sung Ryu, Hae Jung Son
  • Patent number: 7371428
    Abstract: Method of forming different diffusion aluminide coatings on different surface regions of the same superalloy substrate involves positioning the substrate in a coating chamber having a aluminum-bearing coating gas flowing therein with a first substrate surface region enclosed in a masking enclosure having one or more coating gas entrance apertures communicating the interior of the enclosure to the coating gas in the coating chamber and with a second substrate surface region freely communicated to the coating gas in the coating chamber, and gas phase aluminizing the substrate by heating the substrate to an elevated coating temperature in the coating chamber having the coating gas therein to concurrently form an outwardly-grown diffusion aluminide coating on the first substrate surface region and to form an inwardly-grown, diffusion aluminide coating on the second substrate surface region of the same substrate.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: May 13, 2008
    Assignee: Howmet Corporation
    Inventors: Vincent J. Russo, Thomas P. Slavin
  • Patent number: 7354622
    Abstract: A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate side surface of the shower head.
    Type: Grant
    Filed: June 25, 2001
    Date of Patent: April 8, 2008
    Assignees: Tokyo Electron Limited, NEC Corporation
    Inventors: Hiroshi Shinriki, Kenji Matsumoto, Toru Tatsumi
  • Patent number: 7348042
    Abstract: The present invention relates to an enhanced sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.
    Type: Grant
    Filed: May 3, 2002
    Date of Patent: March 25, 2008
    Assignee: Novellus Systems, Inc.
    Inventors: Tony P. Chiang, Karl F. Leeser
  • Patent number: 7323230
    Abstract: A coated aluminum component for a substrate processing chamber comprises an aluminum component having a surface; a first aluminum oxide layer formed on the surface of the aluminum component, the aluminum oxide layer having a surface comprising penetrating surface features; and a second aluminum oxide layer on the first aluminum oxide layer, the second aluminum oxide layer substantially completely filling the penetrating surface features of the first aluminum oxide layer. A method of forming the coated aluminum component is also described.
    Type: Grant
    Filed: August 2, 2004
    Date of Patent: January 29, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Trung T. Doan, Kenny King-Tai Ngan
  • Patent number: 7323220
    Abstract: A method of operating a gas phase growth system is disclosed. The method includes a processing stage and a stabilizer feeding stage. In a non-limiting embodiment of the disclosure, an organometallic complex is vaporized by a vaporizer, and subsequently fed to a reaction chamber through a gas line communicating the vaporizer with the reaction chamber, whereby a film is formed on a substrate in the reaction chamber. During the stabilizer feeding stage, a stabilizer for the organometallic complex is fed in a gaseous state during normal operation of the vaporizer, wherein the stabilizer feeding stage is executed when the vaporizer is not vaporizing the organometallic complex.
    Type: Grant
    Filed: November 30, 2004
    Date of Patent: January 29, 2008
    Assignee: Tokyo Electron Ltd.
    Inventors: Yasuhiko Kojima, Vincent Vezin, Tomohisa Hoshino
  • Patent number: 7265233
    Abstract: An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-based films using the organometallic compound are provided. The organometallic iridium compound represented by the formula (1) (example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4) with a compound represented by the formula (2) or (3) An iridium-based film is prepared using the compound as a precursor. In the formulae, R1 represents hydrogen atom or a lower alkyl group; R2 represents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: September 4, 2007
    Assignees: Tosoh Corporation, Sagami Chemical Research Center
    Inventors: Kazuhisa Kawano, Mayumi Takamori, Noriaki Oshima
  • Patent number: 7250220
    Abstract: An improved component for use in a deposition chamber is constructed from ceramic zirconia and a stabilizing compound. The zirconia is preferably in a partially stabilized form and is coated with a metallic layer such as thermally sprayed aluminum. The surface of the zirconia is roughened to improve adhesion between the zirconia and the aluminum. Alternatively, an intermediate layer may be deposed between the zirconia and the metallic layer to improve the bonding between the layers. The coated zirconia component resists flaking when covered with materials that are being deposited in the deposition chamber and, thus, reduces the likelihood that devices being constructed in the deposition chamber will be contaminated by loose particles.
    Type: Grant
    Filed: August 12, 2003
    Date of Patent: July 31, 2007
    Assignee: Tosoh SET, Inc.
    Inventors: Joseph Patrick Rymer, Rafael Ricolcol
  • Patent number: 7238822
    Abstract: A ruthenium compound from which high-quality film-like metal ruthenium can be obtained and a process for producing a metal ruthenium film from the ruthenium compound by chemical vapor deposition.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: July 3, 2007
    Assignee: JSR Corporation
    Inventors: Tatsuya Sakai, Sachiko Hashimoto, Yasuo Matsuki
  • Patent number: 7192624
    Abstract: Continuously operating furnace and method for obtaining thermal diffusion coating on the outside surface of metallic articles. The furnace is configured as a tunnel through which in succession are advanced closed containers filled with the processed articles and with powder mixture, containing diffusing specie. A chain conveyor, passing through the furnace, advances the containers along a transportation path. The furnace is provided with plurality of stopper means, capable to intermittently prevent the advancement of the containers and to retain them in discrete positions, situated along the transportation path. The containers advance in parallel being always directed perpendicularly to the transportation path and their retention in the discrete positions causes their rotation about their longitudinal axes. Continuous operation is associated with improved efficiency and increased capacity.
    Type: Grant
    Filed: December 26, 2000
    Date of Patent: March 20, 2007
    Assignee: Distek, Ltd.
    Inventors: Isaac Shtikan, Josef Almen
  • Patent number: 7182979
    Abstract: A method directed to the use of a nonvolatile precursor, either a solid or liquid precursor, suitable for CVD, including liquid source CVD (LSCVD). Using the method of the invention the nonvolatile precursor is dissolved in a solvent. Choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature, which can be liquified by combination of pressure and cooling. The solution is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. The solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film.
    Type: Grant
    Filed: August 5, 2002
    Date of Patent: February 27, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Donald L. Westmoreland, Gurtej S. Sandhu
  • Patent number: 7163718
    Abstract: A process for forming diffusion aluminide coatings on an uncoated surface of a substrate, without interdiffusing a sufficient amount of aluminum into a coating layer to adversely affect the coating growth potential and mechanical properties of said coating layer. A metal substrate is provided comprising an external surface and an internal passage therein defined by an internal surface, at least a portion of the external surface of the substrate being coated with a coating layer selected from the group consisting of ?-NiAl-base, MCrAlX, a line-of-sight diffusion aluminide, a non-line-of-sight diffusion aluminide, a pack diffusion aluminide, and a slurry diffusion aluminide on said substrate. The metal substrate is subjected to an aluminum vapor phase deposition process.
    Type: Grant
    Filed: October 15, 2003
    Date of Patent: January 16, 2007
    Assignee: General Electric Company
    Inventors: Nripendra Nath Das, Joseph David Rigney, Jeffrey Allan Pfaendtner, Matthew David Saylor
  • Patent number: 7138013
    Abstract: A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.
    Type: Grant
    Filed: June 19, 2003
    Date of Patent: November 21, 2006
    Assignee: Seiko Epson Corporation
    Inventors: Eiji Natori, Koichi Furuyama, Yuzo Tasaki
  • Patent number: 7138189
    Abstract: Disclosed is a heat-resistant Ti alloy material excellent in high-temperature corrosion resistance and oxidation resistance, which comprises a base made of a heat-resistant Ti alloy and a surface layer formed on the surface of the base. The surface layer has a multilayer structure including an inner layer and an outer layer. The inner layer has three coexistent phases consisting of a ? phase, a ? phase and a Laves phase in the phase diagram of a Ti—Al—Cr based alloy, and the outer layer is made of an Al—Ti—Cr based alloy having an Al concentration of 50 atomic % or more.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: November 21, 2006
    Assignee: Japan Science and Technology Agency
    Inventors: Toshio Narita, Takumi Nishimoto
  • Patent number: 7115327
    Abstract: An article comprising a substrate formed of a silicon-comprising material, such as an article exposed to the hostile thermal environment of a gas turbine engine. The article further comprises an environmental barrier layer, e.g., an alkaline earth metal aluminosilicate, and a top coat comprising zirconia or hafnia stabilized with an oxide of a metal selected from the group consisting of magnesium, calcium, scandium, yttrium, and lanthanide metals, and mixtures thereof. The article further comprises a transition layer between the environmental barrier layer and the top coat, the transition layer comprising zirconia or hafnia stabilized with an oxide of a metal selected from the group consisting of magnesium, calcium, scandium, yttrium, and lanthanide metals; and a low CTE oxide selected from the group consisting of niobia and tantala; and mixtures thereof. A method for preparing a thermal/environmental barrier coating system on a substrate formed of a silicon-comprising material is also disclosed.
    Type: Grant
    Filed: January 21, 2005
    Date of Patent: October 3, 2006
    Assignee: General Electric Company
    Inventors: Irene Spitsberg, Christine Govern, Bangalore Aswatha Nagaraj, Brian Thomas Hazel, David Joseph Mitchell
  • Patent number: 7115326
    Abstract: An article comprising a substrate formed of a silicon-comprising material, such as an article exposed to the hostile thermal environment of a gas turbine engine. The article further comprises an environmental barrier layer, e.g., an alkaline earth metal aluminosilicate, and a top coat comprising zirconia or hafnia stabilized with up to about 10 mole % of an oxide of a metal selected from the group consisting of magnesium, calcium, scandium, yttrium, and lanthanide metals, and mixtures thereof. The article further comprises a transition layer between the environmental barrier layer and the top coat, the transition layer comprising zirconia or hafnia stabilized with up to about 10 mole % of an oxide of a metal selected from the group consisting of magnesium, calcium, scandium, yttrium, and lanthanide metals; and a low CTE oxide selected from the group consisting of niobia and tantala; and mixtures thereof.
    Type: Grant
    Filed: January 21, 2005
    Date of Patent: October 3, 2006
    Assignee: General Electric Company
    Inventors: Irene Spitsberg, Christine Govern, Bangalore Aswatha Nagaraj, Brian Thomas Hazel, David Joseph Mitchell
  • Patent number: 7094445
    Abstract: An article such as a hollow gas turbine blade has an internal cavity therein with an inlet and outlet. The outlet has an outlet minimum transverse dimension of from about 0.009 inch to about 0.012 inch. An aluminiding source powder has a minimum particle size of greater than about 0.0015 inch and not greater than about 0.005 inch. The aluminiding source powder is a mixture of from about 5 to about 15 percent by weight of a metallic aluminum-containing powder and from about 85 to about 95 percent by weight of a ceramic powder. The aluminiding source powder is flowed into the internal cavity through the inlet, and the article is heated with the aluminiding source powder in the internal cavity to a temperature of from about 1750° F. to about 2000° F., and for a time of from about 2 hours to about 12 hours, to deposit an aluminum-containing coating on the internal surface of the internal cavity. The aluminiding source powder is thereafter removed from the internal cavity through the inlet.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: August 22, 2006
    Assignee: General Electric Company
    Inventor: Atul Natverlal Shah
  • Patent number: 7083827
    Abstract: A nickel-base superalloy substrate includes a surface region having an integrated aluminum content of from about 18 to about 24 percent by weight and an integrated platinum content of from about 18 to about 45 percent by weight, with the balance components of the substrate. The substrate is preferably a single-crystal advanced superalloy selected for use at high temperatures. The substrate may optionally have a ceramic layer deposited over the platinum-aluminide region, to produce a thermal barrier coating system. The platinum-aluminide region is produced by diffusing platinum into the substrate surface, and thereafter diffusing aluminum into the substrate surface.
    Type: Grant
    Filed: February 10, 1999
    Date of Patent: August 1, 2006
    Assignee: General Electric Company
    Inventor: Jon C. Schaeffer
  • Patent number: 7078073
    Abstract: According to an embodiment of the invention, a method for repairing a coated high pressure turbine blade, which has been exposed to engine operation, to restore coated airfoil contour dimensions of the blade, is disclosed. The method comprises providing an engine run high pressure turbine blade including a base metal substrate made of a nickel-based alloy and having thereon a thermal barrier coating system. The thermal barrier coating system comprises a diffusion bond coat on the base metal substrate and a top ceramic thermal barrier coating comprising a yttria stabilized zirconia material. The top ceramic thermal barrier coating has a nominal thickness t. The method further comprises removing the thermal barrier coating system, wherein a portion of the base metal substrate also is removed, and determining the thickness of the base metal substrate removed. The portion of the base metal substrate removed has a thickness, ?t.
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: July 18, 2006
    Assignee: General Electric Company
    Inventors: Joseph D. Rigney, Ching-Pang Lee, Ramgopal Darolia
  • Patent number: 7067351
    Abstract: Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.
    Type: Grant
    Filed: June 8, 2004
    Date of Patent: June 27, 2006
    Assignee: The Regents of the University of California
    Inventors: Michael P. Surh, William D. Wilson, Troy W. Barbee, Jr., Stephen M. Lane
  • Patent number: 7066799
    Abstract: A protection mask used during surface treatment for a turbomachine blade, including for example a sand blasting step and/or a metal coating step, includes at least one part matching the shape of a portion of the blade. The mask is designed to resist surface treatment effects and to be placed on the surface to be protected, and can form a removable and reusable tool according to the invention.
    Type: Grant
    Filed: November 29, 2004
    Date of Patent: June 27, 2006
    Assignee: Snecma Moteurs
    Inventors: Lhocine Oussaada, Thierry Labrousse, Thierry Belkheir, Claude Colas, Habib Mehdaoui, Christian Polis
  • Patent number: 7063871
    Abstract: A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
    Type: Grant
    Filed: July 14, 2003
    Date of Patent: June 20, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Hideaki Yamasaki, Tatsuo Hatano, Tsukasa Matsuda, Taro Ikeda, Kazuhito Nakamura, Koumei Matsuzawa, Yumiko Kawano, Mitsuhiro Tachibana
  • Patent number: 7063740
    Abstract: It is disclosed a method for strengthen the grain boundaries of an article (1) made from a Ni based superalloy while the article (1) is in the solid state and containing at least one grain boundary. A surface diffusion process is applied to the article (1) to enrich the at least one grain boundary with grain boundary strengthening elements of one or a combination of boron, hafnium, zirconium without forming brittle precipitates like borides or carbides.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: June 20, 2006
    Assignee: ALSTOM Technology Ltd
    Inventors: Steffen Müller, Joachim Rösler
  • Patent number: 7045645
    Abstract: Bis(cyclopentadienyl)ruthenium complex havimg a content of at least one member selected from among sodium, potassium, calcium, iron, nickel and zinc of 5 ppm or below; and bis(cyclopentadienyl)ruthenium complex incorporated with 10 to 100 ppm of rhenium The complexes are suitable for metalorganic chemical vapor deposition (MOCVD) and can give ruthenium-containing thin film.
    Type: Grant
    Filed: January 8, 2003
    Date of Patent: May 16, 2006
    Assignee: Mitsubishi Materials Corporation
    Inventors: Hideyuki Hirakoso, Masayuki Ishikawa, Akio Yanagisawa, Katsumi Ogi
  • Patent number: 7026011
    Abstract: A method for applying an aluminide coating on a gas turbine engine blade having an external surface and an internal cooling cavity having an internal surface that is connected to the external surface by cooling holes. The method is conducted in a vapor coating container having a hollow interior coating chamber, and includes the steps of loading the coating chamber with the blade to be coated; providing an aluminide coating gas in the loaded coating chamber; maintaining the loaded coating chamber comprising the aluminide coating gas at a specified temperature and time to deposit an aluminide coating on the external surface of the blade; and then flowing an inert carrier gas into the loaded coating chamber comprising the aluminide coating gas at a specified gas flow rate and time to move the aluminide coating gas through the cooling holes and internal cooling cavity and deposit an aluminide coating on the internal surface of the blade.
    Type: Grant
    Filed: February 4, 2003
    Date of Patent: April 11, 2006
    Assignee: General Electric Company
    Inventors: Roger Dale Wustman, William Scott Walston, Matthew David Saylor, Brian Harvey Pilsner, Jeffrey Allan Pfaendtner
  • Patent number: 7018676
    Abstract: A method for manufacturing ceramics includes a step of forming a ceramic film on a substrate by mixing a fine particle of a raw material species which becomes at least part of raw materials for ceramics with an active species, and feeding the mixed fine particle and active species to the substrate. A manufacture device includes a disposing section which also serves as a heating section for a substrate, a raw material species feeding section for feeding a fine particle of a raw material species, an active species feeding section for feeding an active species, and a mixing section for mixing the raw material species and the active species.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: March 28, 2006
    Assignee: Seiko Epson Corporation
    Inventor: Eiji Natori
  • Patent number: 6989174
    Abstract: An aluminide coating is produced on a hollow article by furnishing an article having a hollow interior and an access opening to the hollow interior, placing an aluminide coating tape into the hollow interior through the access opening, and vapor phase aluminiding the hollow article using an external aluminum vapor source in addition to the aluminide coating tape.
    Type: Grant
    Filed: March 16, 2004
    Date of Patent: January 24, 2006
    Assignee: General Electric Company
    Inventors: Yow Kwok Heng, Chen Keng Nam, Nigel Brian Thomas Langley, Janet Elizabeth Gaewsky
  • Patent number: 6987063
    Abstract: A metal-containing semiconductor layer having a high dielectric constant is formed with a method that avoids inclusion of contaminant elements that reduce dielectric constant of metals. The metal-containing semiconductor layer is formed overlying a substrate in a chamber. A precursor is introduced to deposit at least a portion of the metal-containing semiconductor layer. The precursor contains one or more elements that, if allowed to deposit in the metal-containing layer, would become impurity elements. A reactant gas is used to purify the metal-containing layer by removing impurity elements from the metal-containing layer which were introduced into the chamber by the precursor.
    Type: Grant
    Filed: June 10, 2004
    Date of Patent: January 17, 2006
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Olubunmi O. Adetutu, James K. Schaeffer, Dina H. Triyoso
  • Patent number: 6960675
    Abstract: Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: November 1, 2005
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Tianniu Chen, Chongying Xu, Thomas H. Baum
  • Patent number: 6939578
    Abstract: The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process. This invention also provides a process for making amino-imines and novel amino-imines.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: September 6, 2005
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Alexander Zak Bradley, Jeffrey Scott Thompson, David Lincoln Thorn
  • Patent number: 6933012
    Abstract: A surface of an article is protected by coating the surface with a silicon-containing coating by preparing a coating mixture of silicon, a halide activator, and an oxide powder, positioning the surface of the article in gaseous communication with the coating mixture, and heating the surface of the article and the coating mixture to a coating temperature of from about 1150° F. to about 1500° F. The article is preferably a component of a gas turbine engine made of a nickel-base superalloy.
    Type: Grant
    Filed: December 13, 2002
    Date of Patent: August 23, 2005
    Assignee: General Electric Company
    Inventors: Nripendra Nath Das, Bangalore Aswatha Nagaraj, Matthew David Saylor, Jackie Lee King
  • Patent number: 6924002
    Abstract: A coating and coating process for incorporating surface features on an air-cooled substrate surface of a component for the purpose of promoting heat transfer from the component. The coating process generally comprises depositing a first metallic coating material on the surface of the component using a first set of coating conditions to form a first environmental coating layer, and then depositing a second metallic coating material using a second set of coating conditions that differ from the first set, such that an outer environmental coating layer is formed having raised surface features that cause the surface of the outer environmental coating layer to be rougher than the surface of the first environmental coating layer.
    Type: Grant
    Filed: February 24, 2003
    Date of Patent: August 2, 2005
    Assignee: General Electric Company
    Inventors: Ching-Pang Lee, Robert Edward Schafrik, Ramgopal Darolia, Joseph David Rigney
  • Patent number: 6924038
    Abstract: A mask suitable for protecting a portion of a substrate surface against diffusion coating of the substrate with a metal, which mask comprises a ceramic material comprising silica and an inert refractory diluent and a metal or metal alloy, wherein the metal or metal alloy is one which is reactive with silicon thereby minimising or preventing siliconisation of the substrate with silicon in the ceramic material under conditions of diffusion coating, and which is reactive with the metal being applied by diffusion coating thereby preventing diffusion coating of the portion of the substrate surface it is desired to protect.
    Type: Grant
    Filed: March 28, 2000
    Date of Patent: August 2, 2005
    Assignees: Chromalloy United Kingdom Limited, Wade Ceramics Limited
    Inventors: Bryan Anthony Hardy, David Arthur Goddard, Edward Hugh Shaw
  • Patent number: 6911234
    Abstract: Chemical vapor deposition apparatus and method are provided with coating gas distribution and exhaust systems that provide more uniform coating gas temperature and coating gas flow distribution among a plurality of distinct coating zones disposed along the length of a coating chamber.
    Type: Grant
    Filed: May 24, 2004
    Date of Patent: June 28, 2005
    Assignee: Howmet Corporation
    Inventors: Bruce M. Warnes, Andrew L. Purvis, Daniel L. Near
  • Patent number: 6905730
    Abstract: A method for forming an aluminide coating on a turbine engine component having an external surface and an internal cavity defined by an internal surface that is connected to the external surface by at least one hole. The method is conducted in a vapor coating container having a hollow interior coating chamber, and includes the steps of loading the coating chamber with the component to be coated; flowing a tri-alkyl aluminum coating gas into the loaded coating chamber at a specified temperature, pressure, and time to deposit an aluminum coating on the external and internal surfaces of the component; and heating the component in a nonoxidizing atmosphere at a specified temperature and time to form an aluminide coating on the external and internal surfaces. The coated component is typically then maintained at an elevated temperature in the presence of oxygen to form an oxide coating on the external and internal surfaces of the component.
    Type: Grant
    Filed: July 8, 2003
    Date of Patent: June 14, 2005
    Assignee: General Electric Company
    Inventors: John Frederick Ackerman, Michael James Weimer, Joseph Aloysius Heaney, William Scott Walston, Bangalore Aswatha Nagaraj
  • Patent number: 6905737
    Abstract: A method for providing activated species for a cyclical deposition process is provided. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of the reactive species into a processing region to react within a substrate therein, and maintaining at least a portion of the the gas remaining in the plasma generator in an activated state after delivering the fraction of the gas into the process region. The plasma generator may include a high density plasma (HDP) generator, a microwave generator, a radio-frequency (RF) generator, an inductive-coupled plasma (ICP) generator, a capacitively coupled generator, or combinations thereof.
    Type: Grant
    Filed: October 11, 2002
    Date of Patent: June 14, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Donald J. Verplancken, Ashok K. Sinha
  • Patent number: 6902763
    Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surface sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.
    Type: Grant
    Filed: October 16, 2000
    Date of Patent: June 7, 2005
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6887519
    Abstract: A process for coating hollow bodies, in which a powder mixture including a metal donor powder, an inert filler powder and an activator powder including a metal halide is provided, the powder mixture is brought into contact with an inner surface, which is to be coated, of the hollow body and is heated, in which process, in order to increase the internal layer thicknesses, the inert filler powder is provided with a mean particle size which is approximately the same as the mean particle size of the metal donor powder.
    Type: Grant
    Filed: December 9, 1999
    Date of Patent: May 3, 2005
    Assignee: MTU Aero Engines GmbH
    Inventors: Horst Pillhöffer, Andreas Fritsch, Thomas Dautl, Guido Schesny
  • Patent number: 6884476
    Abstract: A masking material and a method for applying the masking material to preselected surfaces of a component to protect the surfaces to which the masking material is applied from exposure to a vapor phase of aluminum gas while a protective environmental coating is applied to other surfaces of the component. The component, such as found in the hot section of a gas turbine engine, typically has intricate internal passageways. A ceramic material is applied as a mask over preselected surfaces while leaving remaining surfaces of a component exposed. The component typically is a superalloy component, and the exposed surfaces are to be coated with an environmental protective coating. The surfaces are preselected on the basis of whether coating is desired on the surface. The ceramic material forms a continuous, crack-free mask on these preselected surfaces without obstructing the internal passageways. The ceramic material which forms a mask is stable at the elevated temperatures of environmental coating application.
    Type: Grant
    Filed: October 28, 2002
    Date of Patent: April 26, 2005
    Assignee: General Electric Company
    Inventors: Jeff Pfaendtner, James Ruud, Ted Grossman, Peter Meschter, Joseph Rigney
  • Patent number: 6884463
    Abstract: The present invention is a CVD process for forming a thin film which includes a step of recovering an organometallic compound component from an exhaust gas which has been conventionally discarded, and a purifying step of purifying the recovered organometallic compound to thereby eliminate a by-product formed in a film forming step by CVD. According to this process, the organometallic compound is recycled. As a recovering technique, any of the followings is employed: a technique in which the exhaust gas is cooled and is recovered as a recovered content; a technique in which the exhaust gas is brought into contact with a solvent to dissolve the organometallic compound in the solvent; and a technique in which the exhaust gas is brought into contact with an adsorbent to thereby adsorb the organometallic compound.
    Type: Grant
    Filed: March 27, 2001
    Date of Patent: April 26, 2005
    Assignee: Tanaka Kikinzoku Kogyo K.K.
    Inventors: Katsutsugu Kitada, Masayuki Saito
  • Patent number: 6884902
    Abstract: An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2): wherein R1 represents hydrogen or a lower alkyl group; R2 to R7 each represents hydrogen, a halogen, or the like, provided that specific combinations of R1 to R7 are excluded; R8 represents a lower alkyl group; R9 to R12 each represents hydrogen, a halogen, or the like, provided that specific combinations of R8 to R12 are excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.
    Type: Grant
    Filed: April 20, 2004
    Date of Patent: April 26, 2005
    Assignee: Tosoh Corporation
    Inventors: Mayumi Takamori, Noriaki Oshima, Kazuhisa Kawano
  • Patent number: 6881452
    Abstract: A thermal barrier coating system having an improved life as a result of a preoxidation treatment applied to a single phase platinum aluminide bond coat. After coating the substrate to form a diffusion platinum aluminum bond coat, the surface finish of the bond coat was grit blasted with an inert grit of preselected size at a preselected pressure to achieve a predetermined surface finish. After the grit blasting, but before application of the ceramic top coat of yttria-stabilized zirconia (YSZ), the coating was preoxidized to form a thin alumina scale by heat treating the diffusion platinum aluminide bond coat at an elevated temperature at a preselected partial pressure of oxygen.
    Type: Grant
    Filed: July 6, 2001
    Date of Patent: April 19, 2005
    Assignee: General Electric Company
    Inventor: Irene Spitsberg
  • Patent number: 6878402
    Abstract: A system and method for that allows one part of an atomic layer deposition (ALD) process sequence to occur at a first temperature while allowing another part of the ALD process sequence to occur at a second temperature. In such a fashion, the first temperature can be chosen to be lower such that decomposition or desorption of the adsorbed first reactant does not occur, and the second temperature can be chosen to be higher such that comparably greater deposition rate and film purity can be achieved. Additionally, the invention relates to improved temperature control in ALD to switch between these two thermal states in rapid succession. It is emphasized that this abstract is provided to comply with rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
    Type: Grant
    Filed: May 10, 2001
    Date of Patent: April 12, 2005
    Assignee: Novellus Systems, Inc.
    Inventors: Tony P. Chiang, Karl F. Leeser
  • Patent number: 6872420
    Abstract: The present invention provides methods for the preparation of compounds of the formula (Formula I): LyM(CO)z wherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru3(CO)12 or Os3(CO)12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.
    Type: Grant
    Filed: April 21, 2003
    Date of Patent: March 29, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Stefan Uhlenbrock, Brian A. Vaartstra