Coating Formed From Vaporous Or Gaseous Phase Reaction Mixture (e.g., Chemical Vapor Deposition, Cvd, Etc.) Patents (Class 427/255.28)
  • Patent number: 8703248
    Abstract: A polycrystalline silicon reactor which can prevent polycrystalline silicon which deposits on the surface of an electrode holding a silicon seed rod from being peeled off is provided. In a polycrystalline silicon reactor which applies an electric current to a silicon seed rod provided within a furnace, thereby heating the silicon seed rod, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod, the reactor includes, at a bottom plate of the furnace, an electrode holder provided so as to be electrically insulated from the bottom plate, and a seed rod holding electrode connected to the electrode holder, and holding the silicon seed rod toward the upside. Concavo-convex portions exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode.
    Type: Grant
    Filed: March 18, 2009
    Date of Patent: April 22, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventors: Toshihide Endoh, Masayuki Tebakari, Toshiyuki Ishii, Masaaki Sakaguchi
  • Patent number: 8703638
    Abstract: The invention has an object of providing catalysts that are not corroded in acidic electrolytes or at high potential, have excellent durability and show high oxygen reducing ability. An aspect of the invention is directed to a process wherein metal carbonitride mixture particles or metal oxycarbonitride mixture particles are produced from an organometallic compound of a Group IV or V transition metal, a metal salt of a Group IV or V transition metal, or a mixture of these compounds using laser light as a light source.
    Type: Grant
    Filed: October 6, 2009
    Date of Patent: April 22, 2014
    Assignee: Showa Denko K.K.
    Inventors: Yasuaki Wakizaka, Toshikazu Shishikura
  • Publication number: 20140102599
    Abstract: A method of coating all surfaces of a plurality of piston rings in a single run by a chemical vapor deposition (CVD) process is provided. The method can include providing a coil formed of an iron-based material; heating the coil; and depositing a coating on all surfaces of the coil during a single continuous period of time, without having to move the coil during the CVD process. The coil is maintained in a fixed position during the depositing step. The method next includes splitting the coil into a plurality of separate coated piston rings. Alternatively, the method can include providing a plurality of stacked keystone piston ring bodies; and disposing a cylinder around the stack to maintain the keystone piston ring bodies in position while depositing the CVD coating on all surfaces of the keystone piston ring bodies during the single coating run.
    Type: Application
    Filed: October 11, 2013
    Publication date: April 17, 2014
    Applicant: Federal-Mogul Corporation
    Inventors: Robert Aharonov, Haron Gekonde
  • Patent number: 8697175
    Abstract: The present invention consists of an implantable structural element for in vivo delivery of bioactive active agents to a situs in a body. The implantable structural element may be configured as an implantable prosthesis, such as an endoluminal stent, cardiac valve, osteal implant or the like, which serves a dual function of being prosthetic and a carrier for a bioactive agent. Alternatively, the implantable structural element may simply be an implantable article that serves the single function of acting as a time-release carrier for the bioactive agent.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: April 15, 2014
    Assignee: Advanced Bio Prosthetic Surfaces, Ltd., a wholly owned subsidiary of Palmaz Scientific, Inc.
    Inventor: Christopher T. Boyle
  • Patent number: 8691338
    Abstract: A first substrate has a source material forming surface on which source materials for forming a polymerized film is formed in a predetermined pattern, and a second substrate has a film forming surface on which the polymerized film will be formed. Here, the first substrate and the second substrate are installed in a processing chamber such that the source material forming surface and the film forming surface face each other. Then, the first substrate is heated to a first temperature at which the source materials on the source material forming surface are evaporated and the second substrate is heated to a second temperature at which the source materials cause polymerization reaction on the film forming surface. Therefore, the polymerized film is formed on the film forming surface by reacting the source materials and evaporated from the first substrate on the film forming surface of the second substrate.
    Type: Grant
    Filed: July 17, 2009
    Date of Patent: April 8, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Yumiko Kawano, Yusaku Kashiwagi
  • Publication number: 20140093652
    Abstract: The invention relates to a process for the continuous production of a flexible substrate, preferably a plastics film containing a multi-layer coating in a roll-to-roll coating process, in which at least one vacuum coating process and at least one wet coating process are combined together, and to a device for use in such a process.
    Type: Application
    Filed: March 28, 2012
    Publication date: April 3, 2014
    Applicants: BAYER (SOUTH EAST ASIG) PTE LTD., BAYER INTELLECTUAL PORPERTY GMBH
    Inventors: Min (Martin) Yan, Axel Schmidt, Peter Reichert
  • Publication number: 20140093656
    Abstract: The synthesis of nanostructures uses a catalyst that may be in the form of a thin film layer on a substrate. Precursor compounds are selected for low boiling point or already exist in gaseous form. Nanostructures are capable of synthesis with a masked substrate to form patterned nanostructure growth. The techniques further include forming metal nanoparticles with sizes <10 nm and with a narrow size distribution. Metallic nanoparticles have been shown to possess enhanced catalytic properties. The process may include plasma enhanced chemical vapor deposition to deposit Ni, Pt, and/or Au nanoparticles onto the surfaces of SiO2, SiC, and GaN nanowires. A nanostructure sample can be coated with metallic nanoparticles in approximately 5-7 minutes. The size of the nanoparticles can be controlled through appropriate control of temperature and pressure during the process. The coated nanowires have application as gas and aqueous sensors and hydrogen storage.
    Type: Application
    Filed: October 23, 2013
    Publication date: April 3, 2014
    Applicant: University of Idaho
    Inventor: David McIlroy
  • Publication number: 20140087076
    Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
    Type: Application
    Filed: July 24, 2013
    Publication date: March 27, 2014
    Applicant: ASM International N.V.
    Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
  • Patent number: 8680289
    Abstract: Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated.
    Type: Grant
    Filed: February 1, 2012
    Date of Patent: March 25, 2014
    Assignee: Air Products and Chemicals, Inc.
    Inventors: John Anthony Thomas Norman, Melanie K. Perez, Xinjian Lei, Daniel P. Spence, Sergei Vladimirovich Ivanov, Wade Hampton Bailey, III
  • Patent number: 8673390
    Abstract: There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: March 18, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Vishwanath Bhat, Rishikesh Krishnan, Daniel F. Gealy
  • Patent number: 8669192
    Abstract: First and second vapor deposition particles (91a, 91b) discharged from first and second vapor deposition source openings (61a, 61b) pass through first and second limiting openings (82a, 82b) of a limiting plate unit (80), pass through mask opening (71) of a vapor deposition mask (70) and adhere to a substrate (10) so as to form a coating film. If regions on the substrate to which the first vapor deposition particles and the second vapor deposition particles adhere if the vapor deposition mask is assumed not to exist are respectively denoted by a first region (92a) and a second region (92b), the limiting plate unit limits the directionalities of the first vapor deposition particles and the second vapor deposition particles in a first direction (10a) that travel to the substrate such that the second region is contained within the first region. Accordingly, it is possible to form a light emitting layer with a doping method by using vapor deposition by color.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: March 11, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shinichi Kawato, Satoshi Inoue, Tohru Sonoda
  • Patent number: 8668957
    Abstract: Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc,??(I) wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber; A step (b) of vaporizing a M1 metal containing precursor of the formula (II): (R1yOp)x(R2tCp)zM1R?4-x-z??(II) wherein 0?x?3, preferably x=0 or 1, 0?z?3, preferably z=1 or 2, 1?(x+z)?4, 0?y?7, preferably y=2 0?t?5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric
    Type: Grant
    Filed: March 16, 2007
    Date of Patent: March 11, 2014
    Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Nicolas Blasco, Audrey Pinchart, Christophe Lachaud
  • Patent number: 8669185
    Abstract: A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness.
    Type: Grant
    Filed: July 30, 2010
    Date of Patent: March 11, 2014
    Assignee: ASM Japan K.K.
    Inventors: Shigeyuki Onizawa, Woo-Jin Lee, Hideaki Fukuda, Kunitoshi Namba
  • Publication number: 20140065368
    Abstract: This disclosure relates to methods that include depositing a first component and a second component to form a film including a plurality of nanostructures, and coating the nanostructures with a hydrophobic layer to render the film superhydrophobic. The first component and the second component can be immiscible and phase-separated during the depositing step. The first component and the second component can be independently selected from the group consisting of a metal oxide, a metal nitride, a metal oxynitride, a metal, and combinations thereof. The films can have a thickness greater than or equal to 5 nm; an average surface roughness (Ra) of from 90 to 120 nm, as measured on a 5 ?m×5 ?m area; a surface area of at least 20 m2/g; a contact angle with a drop of water of at least 120 degrees; and can maintain the contact angle when exposed to harsh conditions.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 6, 2014
    Applicant: UT-BATTELLE, LLC
    Inventors: Tolga AYTUG, Mariappan Parans PARANTHAMAN, John T. SIMPSON, Daniela Florentina BOGORIN
  • Patent number: 8658259
    Abstract: A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: February 25, 2014
    Assignee: ASM International N.V.
    Inventors: Tue Nguyen, Tai Dung Nguyen
  • Patent number: 8658248
    Abstract: A method for atomizing a liquid including providing an atomizer having a liquid supply conduit having an outlet at one end, a gas supply conduit opening into a port in the liquid supply conduit upstream of the outlet, and a means for imparting vibrational energy to the atomizer. In an embodiment, the liquid supply conduit and gas supply conduit are coaxially displaced relative to one another. The method further includes flowing liquid through the liquid supply conduit to the outlet while simultaneously flowing gas through the gas supply conduit, and imparting vibrational energy to the atomizer to atomize the liquid exiting from the outlet. The introduction of gas at the port results in a spray of droplets with improved dimensional properties.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: February 25, 2014
    Assignee: 3M Innovative Properties Company
    Inventors: Edward J. Anderson, Jesus R. Ramos
  • Patent number: 8658545
    Abstract: A vapor deposition source (60), a limiting plate unit (80), and a vapor deposition mask (70) are disposed in this order. The limiting plate unit includes a plurality of limiting plates (81) disposed along a first direction. At least a portion of surfaces (83) defining a limiting space (82) of the limiting plate unit and surfaces (84) of the limiting plate unit opposing the vapor deposition source is constituted by at least one outer surface member (110, 120) capable of attaching to and detaching from a base portion (85). Accordingly, a vapor deposition device that is capable of forming a coating film in which edge blur is suppressed on a large-sized substrate and that has excellent maintenance performance can be obtained.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: February 25, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shinichi Kawato, Satoshi Inoue, Tohru Sonoda
  • Patent number: 8658249
    Abstract: The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: February 25, 2014
    Assignees: L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.
    Inventors: Julien Gatineau, Christian Dussarrat
  • Publication number: 20140050852
    Abstract: To obtain a vaporizer in which thin film-forming raw material solutions are stably and reliably carried by a carrier gas while being reliably separated within the dispersion unit body and the plurality of thin film-forming raw material solutions are stably vaporized in the subsequent vaporization unit, a center rod used in the vaporizer, and a method for vaporizing raw materials entrained by a carrier gas. A carrier gas introduction bore is formed in the center axis direction of the dispersion unit body. A center rod is inserted in the carrier gas introduction bore. The interspace between the inner wall of the bore and the outer wall of the rod forms a gas passage. Multiple thin film-forming material supply units are situated midway of the gas passage of the dispersion unit body, supplying thin film-forming materials. The center rod has sealing members in the longitudinal direction of the center rod.
    Type: Application
    Filed: February 27, 2012
    Publication date: February 20, 2014
    Applicant: KABUSHIKI KAISHA WATANABE SHOKO
    Inventors: Masaru Umeda, Masayuki Toda
  • Publication number: 20140048481
    Abstract: Systems and methods for monitoring analytes in real time using integrated chromatography systems and devices. Integrated microfluidic liquid chromatography devices and systems include multiple separation columns integrated into a single substrate. Using such a device, parallel analysis of multiple samples can be performed simultaneously and/or sequential analysis of a single sample can be performed simultaneously on a single chip or substrate. The devices and systems are well suited for use in high pressure liquid chromatography (HPLC) applications. HPLC chips and devices including embedded parylene channels can be fabricated using a single mask process.
    Type: Application
    Filed: October 28, 2013
    Publication date: February 20, 2014
    Applicant: California Institute of Technology
    Inventors: Chi-Yuan Shih, Yu-Chong Tai, Jun Xie, Darron K. Young, Po-Jui Chen
  • Publication number: 20140049923
    Abstract: A method of preparing a surface for deposition of a thin film thereon, wherein the surface including a plurality of protrusions extending therefrom and having shadowed regions, includes locally treating at least one of the protrusions.
    Type: Application
    Filed: August 20, 2012
    Publication date: February 20, 2014
    Applicant: UNIVERSAL DISPLAY CORPORATION
    Inventors: Ruiqing Ma, Chuanjun Xia, Prashant Mandlik
  • Patent number: 8652573
    Abstract: Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising: providing a reaction chamber; providing a substrate in said reaction chamber; subjecting the substrate to a series of deposition cycles, wherein each deposition cycle includes the steps of: (a) during a first time interval, supplying a first reactant to the reaction chamber; (b) during a second time interval, supplying a second reactant to the reaction chamber; and (c) during a third time interval, supplying neither the first nor the second reactant to the reaction chamber; wherein a start of the second time interval lies within the first time interval, such that a pre-exposure interval exists between a start of the first time interval and the start of the second time interval, during which pre-exposure interval the first reactant is supplied to the reaction chamber while the second reactant is not.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: February 18, 2014
    Assignee: ASM International N.V.
    Inventors: Maarten Stokhof, Hessel Sprey, Tatsuya Yoshimi, Bert Jongbloed, Noureddine Adjeroud
  • Patent number: 8652950
    Abstract: A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: February 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: Son Van Nguyen, Alfred Grill, Thomas J. Haigh, Jr., Sanjay Mehta
  • Publication number: 20140044887
    Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed.
    Type: Application
    Filed: January 30, 2012
    Publication date: February 13, 2014
    Applicant: Nederlandse Organisatie Voor Toegpast- Natuurwetenschappelijk Onderzoek TNO
    Inventor: Adrianus Johannes Petrus Maria Vermeer
  • Patent number: 8647714
    Abstract: In a nickel film forming method, an initial Ni film is formed on a substrate by a chemical vapor deposition (CVD) process by using a nickel-containing compound having a molecular structure in which a ligand containing a nitrogen-carbon bond is included and nitrogen of the ligand coordinates with nickel as a film forming source material and at least one selected from ammonia, hydrazine, and derivatives thereof as a reduction gas. Further, a main Ni film is formed on the initial Ni film by CVD by using the nickel-containing compound as the film forming source material and hydrogen gas as the reduction gas.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: February 11, 2014
    Assignee: Tokyo Electron Limited
    Inventor: Hideki Yuasa
  • Publication number: 20140037847
    Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed.
    Type: Application
    Filed: January 31, 2012
    Publication date: February 6, 2014
    Inventors: Adrianus Johannes Petrus Maria Vermeer, Robert Coenraad Wit, Roger M.W. Gortzen
  • Publication number: 20140037846
    Abstract: Heating of precursor before exposing the substrate to the precursor for depositing material on the substrate using a deposition method (e.g., ALD, MLD or CVD). A reactor for injecting precursor onto the substrate includes a heater placed in a path between a channel connected to a source of the precursor and a reaction chamber of the reactor. As the precursor passes the heater, the precursor is heated to a temperature conducive to the deposition process. Alternatively or in addition to the heater, the reactor may inject a heated gas that mixes with the precursor to increase the temperature of the precursor before exposing the substrate to the precursor.
    Type: Application
    Filed: July 16, 2013
    Publication date: February 6, 2014
    Inventors: Sang In Lee, Il Song Lee
  • Publication number: 20140030434
    Abstract: A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.
    Type: Application
    Filed: September 26, 2013
    Publication date: January 30, 2014
    Applicant: AIXTRON INC.
    Inventors: Piotr Strzyzewski, Peter Baumann, Marcus Schumacher, Johannes Lindner, Antonio Mesquida Küsters
  • Publication number: 20140030448
    Abstract: Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH3 groups with at least one C2-3 linkage between silicon atoms such as 1,4-disilabutane.
    Type: Application
    Filed: July 24, 2013
    Publication date: January 30, 2014
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Heather Regina Bowen, Jianheng Li, Mark Leonard O'Neill, Manchao Xiao, Andrew David Johnson, Xinjian Lei
  • Publication number: 20140030436
    Abstract: Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented, without limitation to specific orientation, by: wherein R1 and R2 are each independently H or any C1-C3 alkyl group, R4 is trimethylsilyl or C1-C3 alkyl, and L is any ligand that does not contain oxygen; and exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface.
    Type: Application
    Filed: July 25, 2012
    Publication date: January 30, 2014
    Applicant: Applied Materials, Inc.
    Inventor: David Knapp
  • Publication number: 20140008210
    Abstract: The present invention provides a filtration chamber comprising a microfabricated filter enclosed in a housing, wherein the surface of said filter and/or the inner surface of said housing are modified by vapor deposition, sublimation, vapor-phase surface reaction, or particle sputtering to produce a uniform coating; and a method for separating cells of a fluid sample, comprising: a) dispensing a fluid sample into the filtration chamber disclosed herein; and b) providing fluid flow of the fluid sample through the filtration chamber, wherein components of the fluid sample flow through or are retained by the filter based on the size, shape, or deformability of the components.
    Type: Application
    Filed: March 15, 2013
    Publication date: January 9, 2014
    Inventors: Antonio GUIA, Douglas T. YAMANISHI, Andrea GHETTI, Guoliang TAO, Huimin TAO, Ky TRUONG, Lei WU, Xiaobo WANG
  • Patent number: 8623457
    Abstract: A vacuum processing system includes a transfer chamber configured to form a vacuum atmosphere through which a target object is transferred. A transfer mechanism is disposed in the transfer chamber and configured to transfer the target object. A process chamber is connected to the transfer chamber through a first gate valve and configured to perform a process on the target object within a vacuum atmosphere. A first exhaust port is formed in a bottom of the transfer chamber at the foot of the first gate valve. A first gas exhaust section is connected to the first exhaust port and configured to exhaust gas inside the transfer chamber.
    Type: Grant
    Filed: June 16, 2010
    Date of Patent: January 7, 2014
    Assignee: Tokyo Electron Limited
    Inventor: Kengo Ashizawa
  • Patent number: 8617305
    Abstract: Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries.
    Type: Grant
    Filed: January 11, 2012
    Date of Patent: December 31, 2013
    Assignee: Air Products and Chemicals, Inc.
    Inventors: Xinjian Lei, Daniel P. Spence
  • Publication number: 20130344246
    Abstract: An apparatus for performing film deposition includes one or more processing tubes, a heat source, one or more reactant gas manifolds, and one or more exhaust gas manifolds. The one or more processing tubes define a first reaction space and a second reaction space that are not in gaseous communication. The heat source is translatable so as to direct energy into the first reaction space when the energy source is in a first position, and to direct energy into the second reaction space when the energy source is in a second position. The one or more reactant gas manifolds are operative to introduce a first reactant gas flow into the first reaction space, and to introduce a second reactant gas flow into the second reaction space. The one or more exhaust gas manifolds are operative to exhaust gases from the first reaction space and from the second reaction space.
    Type: Application
    Filed: June 21, 2012
    Publication date: December 26, 2013
    Inventor: Xuesong Li
  • Publication number: 20130344247
    Abstract: A configuration is provided for a deposition device using the catalytic CVD method which reduces problems associated with extension of the catalyst and is superior in terms of running costs and productivity. The configuration provides a chamber 1 able to maintain reduced interior pressure; a source gas introducing route 32, 33a for introducing source gas into the chamber; a catalyst 4 of tantalum wire having a boride layer on the surface and provided inside the chamber 1 so as to allow the source gas introduced via the source gas introducing route to come into contact with the surface of the catalyst; a gas introducing route 36, 33b for introducing boron-containing gas to the chamber 1 for the reformation of the boride layer on the surface of the catalyst 4; and a power supply unit 5 for applying energy to the catalyst 4 to maintain the catalyst at a predetermined temperature.
    Type: Application
    Filed: August 28, 2013
    Publication date: December 26, 2013
    Applicant: Sanyo Electric Co., Ltd.
    Inventors: Tomonori Ueyama, Motohide Kai
  • Patent number: 8613976
    Abstract: A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: December 24, 2013
    Assignee: L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
    Inventors: Christian Dussarrat, Ikuo Suzuki, Kazutaka Yanagita, Julien Gatineau, Eri Tsukada
  • Publication number: 20130333835
    Abstract: Hybrid inorganic-organic, polymeric alloys are prepared by combining atomic layer deposition and molecular layer deposition techniques provide barrier protection against intrusion of atmospheric gases such as oxygen and water vapor. The alloy may be formed either directly on objects to be protected, or on a carrier substrate to form a barrier structure that subsequently may be employed to protect an object. The alloy thus formed is beneficially employed in constructing electronic devices such as photovoltaic cell arrays, organic light-emitting devices, and other optoelectronic devices.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 19, 2013
    Applicant: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Peter Francis Carcia, Robert Scott Mclean
  • Publication number: 20130337236
    Abstract: A method for growing elongated nanostructures (7) only on the bottom (3) of a recessed structure (4), the method comprising: a. providing a substrate (5) comprising said recessed structure (4), said recessed structure (4) comprising: said bottom (3), and at least one sidewall (6), b. modifying the chemical nature of the surface of said at least one sidewall (6) so that said at least one sidewall (6) has a lower affinity than said bottom (3) for a catalyst film (2), c. providing said catalyst film (2) onto said bottom (3), d. thermally and/or plasma treating said film (2) so as to form said catalyst nanoparticles (1), and e. growing elongated nanostructures (7) in said recessed structure (4) using the catalyst nanoparticles (1).
    Type: Application
    Filed: June 14, 2013
    Publication date: December 19, 2013
    Inventors: Daire J. Cott, Silvia Armini
  • Patent number: 8609193
    Abstract: A method for ionic polymerization of ethylene oxide. In the first step of the method, a gaseous monomer composition comprising ethylene oxide at a first flow rate is mixed with a gaseous ionic polymerization initiator at a second flow rate, thereby forming a mixture. The formed mixture is then heated with at least one heated filament to thereby form at least one polymer. The method may also be employed to coat a variety of different substrates in situ during the polymerization reaction.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: December 17, 2013
    Assignee: Drexel University
    Inventors: Kenneth K. S. Lau, Ranjita K. Bose
  • Patent number: 8609192
    Abstract: A method for guaranteeing the oxidation of a strip designed to prevent the selective oxidation of alloy elements of the steel in a continuous steel strip galvanizing annealing furnace having a pre-heating section and a hold section and provided only with radiant tubes. The oxidation of the strip is designed to prevent the selective oxidation of elements of the steel alloy. The novel method includes the following steps: installation of at least one modified tube capable of injection an oxidizing medium at least one point in the oven heating section and/or at least one point in the hold section and injection of the oxidizing medium by means of the modified tube(s), the oxidizing medium having a composition such that in the conditions of the temperature of the oxidizing medium and the steel strip and as a function of the chemical composition of the strip said medium has a dew point which guarantees an in-depth oxidation of the alloy elements of the steel strip.
    Type: Grant
    Filed: July 4, 2008
    Date of Patent: December 17, 2013
    Assignee: Siemens VAI Metals Technologies SAS
    Inventor: Pierre-Jérôme Borrel
  • Patent number: 8603582
    Abstract: Non-stick fixtures for selectively masking portions of a workpiece during application of a workpiece coating are described herein. These fixtures have predetermined surfaces thereon having an average surface roughness of about 25 Ra or less and a Rockwell hardness of about 65 Rc or more. The controlled average surface roughness ensures that these fixtures are non-stick with respect to the workpiece coating being applied to the workpieces disposed therein. The controlled Rockwell hardness ensures that the desired average surface roughness can be maintained throughout repeated use of the fixture in harsh coating environments. These fixtures reduce the workpiece coating bridging that occurs between the fixture and the workpiece, and also reduce the amount of overspray that occurs on the workpiece, thereby minimizing the amount of handwork and/or rework that is necessary after the workpiece is coated. This improves process cycle times and yields significantly.
    Type: Grant
    Filed: December 10, 2012
    Date of Patent: December 10, 2013
    Assignee: United Technologies Corporation
    Inventors: Ryan Richard Bernaski, Bartolomeo Palmieri
  • Patent number: 8603581
    Abstract: A layer of an n-type chalcogenide compositions including at least cadmium that is provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. Such n-type chalcogenide compositions are particularly useful in the making of photovoltaic devices.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: December 10, 2013
    Assignee: Dow Global Technologies LLC
    Inventors: Todd R. Bryden, Buford I. Lemon, Joseph George, Rebekah Kristine-Ligman Feist
  • Publication number: 20130323157
    Abstract: An apparatus is provided for synthesizing a film on a substrate in a reactor that defines an outer reaction space. The apparatus comprises a vessel body and one or more vessel closures. The one or more vessel closures are adapted to be removably attached to the vessel body to form a reaction vessel therewith. The reaction vessel: i) comprises graphite; ii) defines an inner reaction space adapted to contain the substrate; iii) is adapted to be placed within the outer reaction space; and iv) is adapted to allow gas outside the reaction vessel to enter the inner reaction space.
    Type: Application
    Filed: May 31, 2012
    Publication date: December 5, 2013
    Inventor: Xuesong Li
  • Publication number: 20130323519
    Abstract: A barrier film including a substrate, a base (co)polymer layer applied on a major surface of the substrate, an oxide layer applied on the base (co)polymer layer, and a protective (co)polymer layer applied on the oxide layer. The protective (co)polymer layer is formed as the reaction product of a first (meth)acryloyl compound and a (meth)acryl-silane compound derived from a Michael reaction between a second (meth)acryloyl compound and an aminosilane. The first and second (meth)acryloyl compounds may be the same. In some embodiments, a multiplicity of alternating layers of the oxide layer and the protective (co)polymer layer may be used. An oxide layer can be applied over the top protective (co)polymer layer. The barrier films provide, in some embodiments, enhanced resistance to moisture and improved peel strength adhesion of the protective (co)polymer layer(s) to the underlying layers. A process of making, and methods of using the barrier film are also described.
    Type: Application
    Filed: August 7, 2013
    Publication date: December 5, 2013
    Applicant: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Thomas P. Klun, Suresh Iyer, Alan K. Nachtigal, Joseph C. Spagnola, Mark A. Roehrig
  • Publication number: 20130323423
    Abstract: Provided is a method for producing a gas barrier plastic molded body by forming a gas barrier thin film which is substantially colorless and has gas barrier properties, on the surface of a plastic molded body by a heating element CVD method using only raw material gases that are highly safe.
    Type: Application
    Filed: December 28, 2011
    Publication date: December 5, 2013
    Applicant: KIRIN BEER KABUSHIKI KAISHA
    Inventors: Masaki Nakaya, Midori Takiguchi, Mari Shimizu, Aiko Sato, Hiroyasu Tabuchi, Eitaro Matsui
  • Publication number: 20130323652
    Abstract: Methods of preparing organosilane-functionalized regions on a substrate surface and more specifically fabricating patterned functionalized substrates suitable to be optically read, the methods generally comprising employing a vapor deposition process of an organosilane gas onto a lithographically patterned silicon surface followed by removal of the patterning media in a bath of organic solvents and ultrasonic excitation. The inventive methods provide optimized surface density of functional species while avoiding deleterious effects that can occur when lithographically patterned substrates are exposed to various gaseous species during the functionalization process.
    Type: Application
    Filed: June 5, 2012
    Publication date: December 5, 2013
    Applicant: Complete Genomics, Inc.
    Inventors: Andres Fernandez, Shaunak Roy, Jay Shafto, Norman L. Burns, Claudia Richter, Pierre F. Indermuhle
  • Publication number: 20130316108
    Abstract: A gas barrier plastic molded product having high gas barrier properties is provided. The gas barrier plastic molded product is a gas barrier plastic molded product comprising a plastic molded product and a gas barrier thin film provided on the surface of the plastic molded product, in which the gas barrier thin film contains silicon (Si), carbon (C), oxygen (O) and hydrogen (H) as constituent elements, and comprises a Si-containing layer having a Si content percentage represented by (Mathematical Formula 1) of 40.1% or more: Si content percentage[%]={(Si content[atomic %])/(total content of Si, O and C [atomic %])}×100??(Mathematical Formula 1) wherein in Mathematical Formula 1, the content of Si, O or C is a content thereof in the items of the three elements of Si, O and C.
    Type: Application
    Filed: December 28, 2011
    Publication date: November 28, 2013
    Applicant: KIRIN BEER KABUSHIKI KAISHA
    Inventors: Mari Shimizu, Eitaro Matsui, Aiko Sato, Masaki Nakaya, Hiroyasu Tabuchi
  • Publication number: 20130309506
    Abstract: A flexible laminate formed from at least a first layer comprising a first flexible elastomer and a second layer comprising a second flexible elastomer, which are connected to one another by an intermediate layer. The intermediate layer comprises parylene and is applied to the first layer such that the intermediate layer has an irregular surface with irregularities. The second flexible elastomer or an adhesive connected to the second layer is applied in liquid form to the intermediate layer such that the irregularities the intermediate layer are at least partially filled.
    Type: Application
    Filed: May 14, 2013
    Publication date: November 21, 2013
    Inventor: Dionys DORNIEDEN
  • Publication number: 20130309417
    Abstract: The present application relates generally to atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A-B-O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed.
    Type: Application
    Filed: May 16, 2012
    Publication date: November 21, 2013
    Applicant: ASM IP HOLDING B.V.
    Inventors: Raija Matero, Tom Blomberg
  • Patent number: 8586140
    Abstract: A film formation method for forming a metal oxide film includes loading a target object into a process container configured to maintain a vacuum therein; supplying a film formation source material into the process container; supplying an oxidizing agent into the process container; and causing the film formation source material and the oxidizing agent to react with each other, thereby forming a metal oxide film on the target object. The film formation source material is an organic metal compound containing a metal of the metal oxide film and prepared by mixing a first organic metal compound that is solid at room temperature and has a higher vapor pressure with a second organic metal compound that is liquid at room temperature such that the organic metal compound is liquid at room temperature.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: November 19, 2013
    Assignee: Tokyo Electron Limited
    Inventor: Haruhiko Furuya