Abstract: Methods of forming aluminum oxide layers on substrates are disclosed. In some embodiments, the method includes depositing an aluminum oxide seed layer on the substrate using a first process having a first deposition rate. The method further includes depositing a bulk aluminum oxide layer atop the seed layer using a metalorganic chemical vapor deposition (MOCVD) process having a second deposition rate greater than the first deposition rate.

Abstract: Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.

Abstract: A method for large scale manufacture of photovoltaic devices includes loading a substrate into a load lock station and transferring the substrate in a controlled ambient to a first process station. The method includes using a first physical deposition process in the first process station to cause formation of a first conductor layer overlying the surface region of the substrate. The method includes transferring the substrate to a second process station, and using a second physical deposition process in the second process station to cause formation of a second layer overlying the surface region of the substrate. The method further includes repeating the transferring and processing until all thin film materials of the photovoltaic devices are formed. In an embodiment, the invention also provides a method for large scale manufacture of photovoltaic devices including feed forward control. That is, the method includes in-situ monitoring of the physical, electrical, and optical properties of the thin films.

Abstract: Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxide or it may be doped polycrystalline p-type tin oxide. When the layer of tin oxide is formed on a crystalline substrate, substantially crystalline tin oxide is formed. Dopant precursors for producing doped p-type tin oxide are also disclosed.

Abstract: A method for providing a component with protection against sand related distress includes the steps of: providing a substrate; depositing a layer of a yttria-stabilized zirconia material on the substrate; and forming a molten silicate resistant outer layer over the yttria-stabilized zirconia material.

Abstract: Disclosed is a method for fabricating a CuInS2 thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS2 thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS2 thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS2 thin film fabricated by the method. Disclosed is further a method for fabricating an In2S3 thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS2 thin film by MOCVD. Disclosed further is an In2S3 thin film fabricated by the method. The In2S3 thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.

Abstract: A method for selectively removing an aluminum-poor overlay coating from a substrate of a component, which as a result of its low aluminum content is highly resistant to a selective stripping solution. The method entails diffusing aluminum into the overlay coating to form an aluminum-infused overlay coating having an increased aluminum level in at least an outer surface thereof. The diffusion step is carried out so that the increased aluminum level is sufficient to render the aluminum-infused overlay coating removable by selective stripping. The outer surface of the aluminum-infused overlay coating is then contacted with an aqueous composition to remove the aluminum-infused overlay coating from the substrate. The aqueous composition includes at least one acid having the formula HxAF6, and/or precursors thereof, wherein A is Si, Ge, Ti, Zr, Al, and/or Ga, and x is from 1 to 6.

Abstract: A process for manufacturing glass containers completely or partly treated with the chemical vapor deposition (CVD) technique, by which a layer of oxides of Si and/or B and/or Ti and/or Zr and/or Ta and/or Al and/or mixtures of one or more of said elements is deposited with HTAP-MOCVD technique, includes the step of carrying our the deposition during the annealing of the container, by supplying into the annealing furnace a suitable gas mixture of precursor, reactant and transport gas.

Abstract: A process for coating a surface of a potentially fuel-conducting component of a turbine, in particular a gas turbine, in which the surface is firstly coated with a titanium nitride layer and subsequently with an a-aluminium oxide layer by means of chemical vapour deposition, is disclosed. In addition, a turbine component for example a component of a gas turbine, which includes a base material and a potentially fuel-conducting surface is described. The surface has an intermediate layer including titanium nitride and a covering layer including a-aluminium oxide.

Abstract: A method of making a metal nitride is provided. The method may include introducing a metal in a chamber. A nitrogen-containing material may be flowed into the chamber. Further, a hydrogen halide may be introduced. The nitrogen-containing material may react with the metal in the chamber to form the metal nitride.

Abstract: A method of performing a CVD process on target substrates all together in a vertical CVD apparatus includes repeating, a plurality of times, first and second steps of supplying first and second reactive gases, respectively. The first reactive gas has a vapor pressure of 1.33 kPa or less, or a bond-dissociation energy of 250 kJ/mol or less. The second reactive gas has a vapor pressure of 2.66 kPa or more, and a bond-dissociation energy of 250 kJ/mol or more. The first reactive gas is supplied from a first delivery hole disposed at a bottom of the process chamber. The second reactive gas is supplied from a plurality of second delivery holes arrayed in a vertical direction at a position adjacent to edges of the target substrates entirely over a vertical length of the target substrates stacked at intervals.

Abstract: An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIA may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process.

Abstract: The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.

Abstract: The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

Abstract: A method for depositing a film onto a substrate is provided. The substrate is contained within a reactor vessel at a pressure of from about 0.1 millitorr to about 100 millitorr. The method comprises subjecting the substrate to a reaction cycle comprising i) supplying to the reactor vessel a gas precursor at a temperature of from about 20° C. to about 150° C. and a vapor pressure of from about 0.1 torr to about 100 torr, wherein the gas precursor comprises at least one organo-metallic compound; and ii) supplying to the reactor vessel a purge gas, an oxidizing gas, or combinations thereof.

Abstract: Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

Abstract: A method for manufacturing a lanthanum oxide compound on a substrate includes: setting the number of H2O molecule, the number of CO molecule and the number of CO2 molecule to one-half or less, one-fifth or less and one-tenth or less per one lanthanum atom, respectively, the H2O molecule, the CO molecule and the CO2 molecule being originated from an H2O gas component, a CO gas component and a CO2 gas component in an atmosphere under manufacture; and supplying a metal raw material containing at least one selected from the group consisting of lanthanum, aluminum, titanium, zirconium and hafnium and an oxygen raw material gas simultaneously for the substrate under the condition that the number of O2 molecule are set to 20 or more per one lanthanum atom, thereby manufacturing the lanthanum oxide compound on the substrate.

Abstract: A refined method to produce textured ?-Al2O3 layers in a temperature range of from about 750 to about 1000° C. with a controlled texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The ?-Al2O3 layer is deposited on a bonding layer of (Ti,Al)(C,O,N) with increasing aluminium content towards the outer surface. Nucleation of ?-Al2O3 is obtained through a nucleation step being composed of short pulses and purges consisting of Ti/Al-containing pulses and oxidizing pulses. The ?-Al2O3 layer according to this invention has a thickness ranging from about 1 to about 20 ?m and is composed of columnar grains. The length/width ratio of the alumina grains is from about 2 to about 12, preferably from about 5 to about 8. The layer is characterized by a strong (116) growth texture, measured using XRD, and by low intensity of (012), (110), (113) (024) and diffraction peaks.

Abstract: The present invention relates to a process for producing CuInSe2 and CuIn1XGa,Se2 thin films used as an absorption layer for a solar cell such that they have a structure near to chemical equivalence ratio. The present invention provides a process for producing a thin film for a solar cell, comprising forming an InSe thin film on a substrate by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor; forming a Cu2Se thin film on the InSe thin film by Metal Organic Chemical Vapor Deposition using a (hfac)Cu(DMB) precursor, and forming a CuInSe2 thin film on the Cu2Se thin film by Metal Organic Chemical Vapor Deposition using a [Me2In-(?SeMe)]2 precursor. Further, the process may further comprise forming a CuIn1,Ga,Se2 thin film on the CuInSe2 thin film by Metal Organic Chemical Vapor Deposition using a [Me2Ga-(?SeMe)]2 precursor.

Abstract: This relates to an improvement to the process of aluminization or activated cementation in which a donor cement containing the aluminium is attacked at high temperature and in a neutral or reducing atmosphere by a gaseous ammonium halide to form a gaseous aluminium halide which decomposes on contact with a nickel-based substrate depositing aluminium metal thereon. According to the invention the aluminium halide is at least partly replaced by a zirconium halide leading to the inclusion of zirconium in the deposit. Improvement in the protection of the hot parts of aircraft engines made of nickel-based superalloy. No figure is to be published.

Abstract: A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 ?m.

Abstract: A method of forming a gas turbine part includes forming a bonding underlayer on a superalloy metal substrate, the underlayer including an intermetallic compound of aluminum, nickel, and platinum, and forming a ceramic outer layer on the alumina film formed on the bonding underlayer. The bonding underlayer essentially comprises an Ni—Pt—Al ternary system constituted by an aluminum-enriched ?-NiPt type structure, in particular an Ni—Pt—Al ternary system having a composition NizPtyAlx in which z, y, and x are such that 0.05?z?0.40, 0.30?y?0.06, and 0.15?x?0.40.

Abstract: A method for making a coated cutting tool insert by depositing by CVD, onto a cemented carbide, titanium based or ceramic substrate a hard layer system, having a total thickness of from about 2 to about 50 ?m, comprising at least one layer selected from titanium carbide, titanium nitride, titanium carbonitride, titanium carboxide and aluminum oxide, and an outer, from about 1 to about 15 ?m thick, aluminum oxide layer or (Al2O3+ZrO2)*N multilayer, a penultimate outermost layer of TiOx, where x ranges from about 1 to about 2, and an outermost, from about 0.3 to about 2 ?m thick, TiCxNyOz layer, where x+y+z=1, x?0, y?0, and z?0, followed by a post-treatment removing at least said outermost layer on the edge-line and on the rake face.

Abstract: A method of depositing a crystalline ?-Al2O3 layer onto a cutting tool insert by Chemical Vapor Deposition at a temperature of from about 625 to about 800° C. includes the following steps: depositing a from about 0.1 to about 1.5 ?m layer of TiCxNyOz where x+y+z>=1 and z>0, preferably z>0.2; treating said layer at 625-1000° C. in a gas mixture containing from about 0.5 to about 3 vol-% O2, preferably as CO2+H2, or O2+H2, for a short period of time from about 0.5 to about 4 min, optionally in the presence of from about 0.5 to about 6 vol-% HCl; and depositing said Al2O3-layer by bringing said treated layer into contact with a gas mixture containing from about 2 to about 10 vol-% of AlC3, from about 16 to about 40 vol-% of CO2, in H2 and 0.8-2 vol-% of a sulphur-containing agent, preferably H2S, at a process pressure of from about 40 to about 300 mbar. Also included is a cutting tool insert with a coating including at least one ?-Al2O3-layer.

Abstract: A refined method to produce textured ?-Al2O3 layers in a temperature range of from about 750 to about 1000° C. with a controlled texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The ?-Al2O3 layer is deposited on a bonding layer of (Ti,Al)(C,O,N) with increasing aluminium content towards the outer surface. Nucleation of ?-Al2O3 is obtained through a nucleation step being composed of short pulses and purges consisting of Ti/Al-containing pulses and oxidizing pulses. The ?-Al2O3 layer according to this invention has a thickness ranging from about 1 to about 20 ?m and is composed of columnar grains. The length/width ratio of the alumina grains is from about 2 to about 12, preferably from about 5 to about 8. The layer is characterized by a strong (116) growth texture, measured using XRD, and by low intensity of (012), (110), (113) (024) and diffraction peaks.

Abstract: The invention provides a method for fabricating a superlattice semiconductor structure capable of achieving excellent interfacial properties and uniformity. For the superlattice semiconductor structure according to the invention, a substrate is mounted on a susceptor within a process chamber. First and second source gases are supplied simultaneously to two different areas on the susceptor within the chamber to form first and second source gas areas separate from each other. The susceptor is rotated to revolve the substrate through the first and second source gas areas.

Abstract: A refined method to produce textured ?-Al2O3 layers in a temperature range of 750-1000° C. with a controlled texture and substantially enhanced wear resistance and toughness than the prior art is disclosed. The ?-Al2O3 layer is formed on a bonding layer of (Ti,Al)(C,O,N) with increasing aluminium content towards the outer surface. Nucleation of ?-Al2O3 is obtained through a nucleation step composed of short pulses and purges of Ti-containing and oxidizing steps. The ?-Al2O3 layer has a thickness ranging from 1 to 20 ?m and is composed of columnar grains. The length/width ratio of the alumina grains is from 2 to 15, preferably 6 to 10. The layer is characterised by a strong (110) growth texture, measured using XRD, and by the low intensity of (012), (104), (113), (024) and (116) diffraction peaks.

Abstract: Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.

Abstract: Methods for forming a high-k dielectric layer that may be utilized to form a metal gate structure in TANOS charge trap flash memories. In one embodiment, the method may include providing a substrate into a chamber, supplying a gas mixture containing an oxygen containing gas and aluminum containing compound into the chamber, wherein the aluminum containing compound has a formula selected from a group consisting of RxAly(OR?)x and Al(NRR?)3, heating the substrate, and depositing an aluminum oxide layer having a dielectric constant greater than 8 on the heated substrate by a chemical vapor deposition process.

Abstract: The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.

Abstract: A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

Abstract: A method for improving atomic layer deposition (ALD) performance and an apparatus thereof are disclosed. The apparatus alternates the process temperature of the different ALD steps rapidly, and the process temperature of each step is determined in accordance with the specific precursor and the substrate surface used. In case a higher process temperature is needed, a plurality of heating units of the apparatus increases and keeps the temperature of the deposited substrate to complete surface reaction. When the lower process temperature is needful for the next ALD step, the heating units are turned off to reduce the temperature of the deposited substrate and a gas flow puffed to the heater and the deposited substrate to assist in temperature cooling.

Abstract: The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses.

Abstract: A work piece or structural component is coated with a system of film layers at least one of which is composed of (AlyCr1-y)X, where X=N, C, B, CN, BN, CBN, NO, CO, BO, CNO, BNO or CBNO and 0.2?y<0.7, with the composition within said film being either essentially constant or varying over the thickness of the film continually or in steps, as well as a process for producing it.

Abstract: The invention includes methods of forming material on a substrate and methods of forming a field effect transistor gate oxide. In one implementation, a first species monolayer is chemisorbed onto a substrate within a chamber from a gaseous first precursor. The first species monolayer is discontinuously formed over the substrate. The substrate having the discontinuous first species monolayer is exposed to a gaseous second precursor different from the first precursor effective to react with the first species to form a second species monolayer, and effective to form a reaction product of the second precursor with substrate material not covered by the first species monolayer. The substrate having the second species monolayer and the reaction product is exposed to a third gaseous substance different from the first and second precursors effective to selectively remove the reaction product from the substrate relative to the second species monolayer. Other implementations are contemplated.

Abstract: There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Abstract: A chemical vapor deposition process for laying down an aluminum oxide coating on a glass substrate through the use of an organic ester having a ? hydrogen on the alkyl group bonded to the carboxylate oxygen and an inorganic aluminum halide. The resulting article has an aluminum oxide coating which can be of substantial thickness because of the high deposition rates attainable with the novel process. Preferably, the coating deposition rates resulting from the method of the present invention may be greater than or equal to 200 ? per second.

Abstract: A method for processing a substrate article is provided. The method includes masking a first portion of the substrate article with a maskant that includes a formed graphite piece that overlays and contacts the first portion of the substrate such that a second portion of the substrate is not overlaid nor contacted by the maskant; and processing the substrate article such that a coating of material is deposited on the second portion of the substrate, and wherein the maskant facilitates preventing the coating from being deposited on the first portion of the substrate article.

Abstract: The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid to introduce a metal-containing precursor into a reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

Abstract: A coated cutting tool is composed of one or more layers of refractory compounds of which at least one layer is single-phase ?-alumina with a pronounced columnar grain-structure and strong texture in the [300]-direction. The alumina layer is preferably deposited by CVD (Chemical Vapor Deposition) and the preferred microstructure and texture are achieved by adding a second metal halide, and a texture modifying agent, to the reaction gas. When coated cemented carbide cutting tools according to the invention are used in the machining of steel or cast iron, several important improvements compared to prior art have been observed, particularly in the machining of nodular cast iron.

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract: A coated article, a coating for protecting an article, and a method for protecting an article are provided. The article comprises a metallic substrate and a substantially single-phase coating disposed on the substrate, wherein the coating comprises nickel (Ni) and at least about 30 atomic percent aluminum (Al); the coating further comprises a gradient in Al composition, the gradient extending from a first Al concentration level at an outer surface of the coating to a second Al concentration level at an interface between the substantially single-phase coating and the substrate, wherein the first Al concentration level is greater than the second Al concentration level and the second concentration level is at least about 30 atomic percent Al.

Abstract: According to the present invention there is provided a body at least partially coated with one or more refractory layers of which at least one layer essentially consist of ?-Al2O3. Said ?-Al2O3 layer consists of essentially equiaxed grains with an average grain size of <1 ?m and with a bimodal grain size distribution with coarser grains with an average grainsize in the interval 0.5-1 ?m and finer grains with an average grainsize of <0.5 ?m. The Al2O3 layer further contains striated zones containing titanium (>5 at %) but no nitrogen or carbon. This particular microstructure is obtained by temporarily stopping the gases needed for the growth of the Al2O3 layer and introducing TiCl4.

Abstract: A method of forming a dielectric film on a Si substrate comprises the steps of adsorbing a gaseous molecular compound of a metal element constituting a dielectric material on a Si substrate, and causing a decomposition of the gaseous molecular compound thus adsorbed by a hydrolysis process or pyrolytic decomposition process or an oxidation process.

Abstract: An anti-static, anti-reflection, transparent coating for a transpatent substrate, the coating including at least one electrically conductive layer, wherein the sheet resistance of the coating is less than about 1010 ohm/square. The coating is preferably higher transparent.

Abstract: A process for making an electroluminescent phosphor having a given emission spectra A, comprises the steps of manufacturing a beginning electroluminescent phosphor having an emission spectra B, different than A. A coating is applied to the phosphor having the emission spectra B to increase the resistance of the phosphor to the deleterious effects of moisture and change the emission spectra of the phosphor to emission spectra A. The application of the coating includes the steps of reacting a coating precursor with a mixture of oxygen and ozone.

Abstract: The present invention relates to a method of depositing a crystalline &agr;-Al2O3-layer onto a cutting tool insert by Chemical Vapor Deposition at a temperature of from about 625 to about 800° C.

Abstract: At least one wafer is exposed to a treatment environment in a treatment chamber at a treatment pressure. The backside of the wafer is exposed to a heat transfer gas for thermally coupling the wafer to the support arrangement. Control of the heat transfer gas provides a fixed flow to the support arrangement enabling thermal coupling with the support arrangement. A first portion of the heat transfer gas leaks between the support arrangement and the wafer. Responsive to a backside pressure signal, a second portion of the fixed flow is released in a way which maintains the backside pressure at a selected value. In one feature, effluent flow control is used for controllably releasing the second portion of heat transfer gas. In another feature, the second portion of heat transfer gas is released into the treatment chamber. Dilution control and multi-wafer configurations are described.

Abstract: A composite target is placed in a chamber. The target is in the form of a bar made of ceramic powder and it presents composition that is not uniform in the longitudinal direction. At least one substrate is introduced into the chamber in order to have formed thereon a ceramic coating with a composition gradient. The top face of the bar is swept by an electron beam so as to melt the bar material at its top face and form a vapor cloud in the chamber under low pressure. A bar is used that presents a plurality of superposed layers of different compositions, with the composition within each layer being uniform over the entire cross-section of the bar. Each layer of the bar comprises zirconia and at least one oxide selected from the oxides of nickel, cobalt, iron, yttrium, hafnium, cerium, lanthanum, tantalum, niobium, scandium, samarium, gadolinium, dysprosium, ytterbium, and aluminum.

Abstract: A process for producing aluminum oxide thin films on a substrate by the ALD method comprises the steps of bonding a vaporizable aluminum compound to a growth substrate, and converting the bonded organoaluminum compound to aluminum oxide. The bonded aluminum compound is converted to aluminum oxide by contacting it with a reactive vapor source of oxygen other than water, and the substrate is kept at a temperature of less than 190° C. during the growth process. By means of the invention it is possible to produce films of good quality at low temperatures. The dielectric thin films having a dense structure can be used for passivating surfaces that do not endure high temperatures. Such surfaces include, for example, polymer films such as organic electroluminescent displays. Further, when a water-free oxygen source is used, surfaces that are sensitive to water can be passivated.