Abstract: An object of the present invention is to provide a liquid material for chemical vapor deposition (CVD), a method of forming a film by CVD and a CVD apparatus, capable of achieving film formation of a silicate compound of good quality. A liquid material for CVD includes an organometallic compound, a siloxane compound and an organic solvent for dissolving the organometallic compound and the siloxane compound. If the organometallic compound includes an alcoxyl group (e.g., tertialy-butoxyl group) having a larger number of carbon atoms than a propoxyl group or a &bgr;-diketone group (e.g., 2,2,6,6-tetramethyl-3,5-heptanedionate group), the stability in film formation is improved. As the organic solvent, diethyl ether, tetrahydrofuran, nor-octane, iso-octane and the like may be employed. As the siloxane compound, tri-metoxy-silane having a high degree of solubility in a nonsolar solvent and hexa-methyl-di-siloxane and octa-methyl-cycro-tetra-siloxane both having solubility in a polar solvent may be employed.

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof.

Abstract: A process for the deposition of thin layers by chemical vapor deposition includes adding an effective amount of nitroxyl radicals of the formula to a gas stream including the materials to be deposited. In this formula, R1 and R2 are identical or different alkyl, alkenyl, alkynyl, acyl, or aryl radicals, with or without heteroatoms. R1 and R2 can also together form a structure —CR3R4—CR5R6—CR7R8—CR9R10—CR11R12—, where R3, R4, R5, R6, R7, R8, R9, R10, R11, R12 are again identical or different alkyl, alkenyl, alkynyl, acyl, or aryl radicals, with or without heteroatoms.

Abstract: A method of using ammonia to form a GaAs alloy with nitrogen atoms is described. The method includes the operation of introducing ammonia with an agent to assist in the breakdown of the ammonia into a reaction chamber with the GaAs film. Agents that are described include radiation as well as compounds that include aluminum.

Abstract: The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Abstract: A thermal barrier coating (TBC) system and method for forming the coating system on a component. The method generally entails forming a TBC on the surface of the component so that the TBC has at least an outer portion that is resistant to infiltration by CMAS. The TBC is formed by co-depositing first and second ceramic compositions by physical vapor deposition so that the entire TBC has columnar grains and at least the outer portion of the TBC is a mixture of the first and second ceramic compositions. The outer portion is preferably a continuation of the inner portion, such that the TBC is not characterized by discrete inner and outer coatings. The second ceramic composition serves to increase the resistance of the outer portion of the TBC to infiltration by molten CMAS. A platinum-group metal may be co-deposited with the first and second ceramic compositions, or deposited before the TBC and then diffused into the outer portion as a result of the parameters employed in the deposition process.

Abstract: A substrate is set on a susceptor installed in a reactor and arranged horizontally. A cooling jacket is provided at a portion of the inner wall of the reactor that is opposite to the substrate. By flowing a given cooling medium through the cooling jacket with a pump connected to the jacket, at least the opposite portion of the inner wall is cooled down, which inhibits the reaction between raw material gases introduced into the reactor. As a result, in fabricating a III-V nitride film, the film growth rate is developed and the crystal quality is developed.

Abstract: A method for depositing a film onto a substrate is provided. The substrate is contained within a reactor vessel at a pressure of from about 0.1 millitorr to about 100 millitorr. The method comprises subjecting the substrate to a reaction cycle comprising i) supplying to the reactor vessel a gas precursor at a temperature of from about 20° C. to about 150° C. and a vapor pressure of from about 0.1 torr to about 100 torr, wherein the gas precursor comprises at least one organo-metallic compound; and ii) supplying to the reactor vessel a purge gas, an oxidizing gas, or combinations thereof.

Abstract: A method of coating phosphor particles comprises introducing an inert gas into a reaction vessel and charging phosphor particles into the reaction vessel. The reaction vessel is then heated to a reaction temperature and a coating precursor is introduced while the temperature is maintained for a time sufficient to saturate the phosphor particles with the precursor. Thereafter, continuous precursor is introduced into the reaction vessel, along with an oxygen/ozone mixture. The inert gas flow, oxygen/ozone mixture flow and further precursor are supplied for a time sufficient to coat the phosphor particles.

Abstract: A gas turbine component, such as a turbine disk or a turbine seal element, is protected by depositing an oxide coating on the gas turbine component. The deposition is performed by a vapor deposition process such as metal-organic chemical vapor deposition (MOCVD) to a coating thickness of from about 0.2 to about 50 micrometers, preferably from about 0.5 to about 3 micrometers. The deposited oxide may be an oxide of aluminum, silicon, tantalum, titanium, and chromium.

Abstract: A surface treating process according to the present invention, a vapor deposited film is formed from an easily oxidizable vapor-depositing material on the surface of a work by evaporating the vapor-depositing material in a state in which the vapor deposition controlling gas has been supplied to at least zones near a melting/evaporating source and the work within a treating chamber. Thus, the vapor deposited film can be formed stably on the surface of a desired work without requirement of a long time for providing a high degree of vacuum and without use of a special apparatus. In addition, the use of the surface treating process ensures that a corrosion resistance can be provided to a rare earth metal-based permanent magnet extremely liable to be oxidized, without degradation of a high magnetic characteristic of the magnet.

Abstract: An object of the present invention is to reduce variance in the flow rates of source gasses and inconsistency in the mixing ratio of the source gasses when the flow paths of the source gasses are switched in a vent/run-type piping system of a vapor deposition apparatus. In a vapor deposition apparatus, a run line for mixing one or more sources with a carrier gas and for supplying the resultant gas to a vapor deposition region; a vent line for allowing the sources to detour away from the vapor deposition region and exhausting the sources; and a mechanism for switching the paths of the sources from the vapor deposition region to the vent line are provided. The paths of the sources are switched from the vent line to the vapor deposition region when the mixing ratio of the sources becomes consistent in the run line.

Abstract: Integrated circuits, the key components in thousands of electronic and computer products, are generally built layer by layer on a silicon substrate. One common layer-formation technique, known as chemical-vapor deposition (CVD), produces uneven layers and covers vertical surfaces poorly. An emergent technique, atomic-layer deposition, overcomes these shortcomings, but has others, such as slow deposition rates and longer than desirable cycle times, particularly as applied to deposition of aluminum oxide. Accordingly, the inventors devised unique atomic-layer deposition systems, methods, and apparatus suitable for aluminum-oxide deposition. One exemplary system includes an outer chamber, a substrate holder, and a gas-distribution fixture that engages or cooperates with the substrate holder to form an inner chamber within the outer chamber.

Abstract: A structure protected by a ceramic coating is prepared by providing a substrate having a surface, and depositing a layer of a sacrificial ceramic precursor material, preferably silica, onto the surface of the substrate. The method further includes furnishing a reactive gas, preferably an aluminum-containing gas, that is reactive with the sacrificial ceramic to produce a protective ceramic different from the sacrificial ceramic, and contacting the reactive gas to the layer of the precursor material to produce a protective ceramic layer.

Abstract: A heat processable coated article suitable for tempering and/or bending which has metallic properties is prepared by coating a glass substrate. The substrate has deposited over it a stabilizing film and a metal-containing film is deposited over the stabilizing film. Also an overcoating with a protective layer of a silicon compound is deposited over the metal-containing film and forms a durable layer and prevents oxidation of the underlying metal-containing film. The coated article can be tempered and/or bent without losing its metallic properties to oxidation.

Abstract: Method for chemical vapor deposition of a film onto a substrate. Before bulk chemical vapor deposition the substrate is subjected to a nucleation treatment. The nucleation treatment comprises atomic layer deposition wherein the substrate is alternatingly and sequentially exposed to pulses of at least two mutually reactive gaseous reactants wherein the nucleation temperature is chosen to prevent condensation of either of the used reactants and to prevent substantial thermal decomposition of each of the reactants individually.

Abstract: A method for growing a group-III nitride compound (including BN, AlN, GaN and InN) semiconductor film, to which much attention is currently paid in the field of optical semiconductors. If the internal pressure of a reactor increases, vertical growth becomes faster, and internal crystal defects are reduced while many fine pits are generated in view of outer appearance. If the internal pressure of a reactor decreases, vertical growth becomes slower and lateral growth becomes relatively faster, producing fewer pits in view of outer appearance, while internal crystal defects increase. Based on such experimental results, nitride crystals having many fine pits and fewer internal defects are first grown by a high pressure growth method and the fine pits relatively increased in number are then filled by a low pressure growth method, thereby attaining a high quality group-III nitride film.

Abstract: Disclosed is a metal sulphide coating composition of the formula MXSiVRYSZFW where M is one or more metals selected from: Mo, Ti, W, Nb, Ta, Zr, and Hf; Si is silicon; R is one or more elements selected from: C, B, Al, V, Cr, Fe, Co, Ni, Sm, Au, Cu, Zn, Sn, Pb, N, H, and O; S is sulphur; F is fluorine; X is 0.2 to 1.5; V is 0.02 to 3; Y is 0 to 4; Z is 0.2 to 6; and W is 0.01 to 6, and in which X, Y, Z, V, and W are given in amounts by atomic ratio. The compositions show good non-stick properties, low hydrophilia, and high stability.

Abstract: Metal oxide films such as lithium niobate are formed in an amorphous state on a substrate such as lithium niobate and can be readily etched by conventional liquid or dry etchants. The amorphous film may then be converted by annealing to a crystalline form well suited to formation of electro-optical devices.

Abstract: An outwardly grown diffusion aluminide bondcoat is formed on a superalloy substrate and has higher concentrations of Al and Pt and lower concentrations of harmful impurities (e.g. Mo, W, Cr, Ta, S, etc.) at an outermost region of the bondcoat than at an innermost region thereof adjacent the substrate. The bondcoat is pretreated prior to deposition of a ceramic thermal insulative layer in a manner that reduces grain boundary ridges on the outermost bondcoat surface without adversely affecting the outermost region thereof, and then is heat treated to thermally grow a stable alpha alumina layer on the bondcoat prior to deposition of a ceramic layer.

Abstract: A liquid precursor for forming a transparent metal oxide thin film comprises a first organic precursor compound. In one embodiment, the liquid precursor is for making a conductive thin film. In this embodiment, the liquid precursor contains a first metal from the group including tin, antimony, and indium dissolved in an organic solvent. The liquid precursor preferably comprises a second organic precursor compound containing a second metal from the same group. Also, the liquid precursor preferably comprises an organic dopant precursor compound containing a metal selected from the group including niobium, tantalum, bismuth, cerium, yttrium, titanium, zirconium, hafnium, silicon, aluminum, zinc and magnesium. Liquid precursors containing a plurality of metals have a longer shelf life. The addition of an organic dopant precursor compound containing a metal, such as niobium, tantalum or bismuth, to the liquid precursor enhances control of the conductivity of the resulting transparent conductor.

Abstract: An organometallic compound of formula LiOR′.(R′O)MR2 is vaporized at a low temperature and employed in a CVD process of a heterometallic oxide film of the LiMO2 type, wherein M is a Group 13 element such as Al or Ga; R is a C1-10 alkyl group; and R′ is a C2-10 alkyl group.

Abstract: A method is disclosed for forming an aluminum oxide film on a semiconductor device. In a process of depositing an aluminum oxide film by atomic layer deposition method using TMA (trimethyl aluminum; Al(CH3)3) as an aluminum source and H2O as an oxygen reaction gas, the disclosed method supplies a NH3 reaction gas at the same time when an aluminum source is supplied. Therefore, it can increase the growth rate of an aluminum oxide film and can also improve the characteristic of preventing penetration of hydrogen into an underlying layer or a semiconductor substrate. Thus, the disclosed method can prevent degradation in a charge storage characteristic in a capacitor and lower in an electrical characteristic of various elements, thus improving an overall characteristic of a semiconductor device.

Abstract: A gas collector for collecting gasses from within a reaction chamber of a reactor comprises a rigid body having a conduit, inlets, an outlet, and a seal disposed on the body. The seal cooperates with a lid of the reactor to prevent escape of reaction gasses from the reaction chamber. The inlets direct the gasses from the reaction chamber into the conduit, and the outlet exhausts the gasses from the conduit. The body includes a first member and a second member with the seal disposed on the second member. The body can include inter-member seals for reducing the flow of the gasses across an interface between the first member and the second member. The inter-member seals disposed between the first member and the second member and allow movement of the first member relative to the second member. The body can also be formed from graphite and can also shape the flow of gasses into the reaction chamber to prevent the formation of standing eddy currents adjacent the gas collector.

Abstract: A phosphor is prepared by depositing a compound semiconductor of Groups III-V in the form of fine particles or a thin film on a surface of a carrier particle by hetero-epitaxial growth. Thus, the phosphor increased in quality is obtained with satisfactory reproducibility.

Abstract: In a method and evaporation chamber for generating a continuous vapor stream containing a compound in which gallium is present in monovalent form of a vacuum coating method for vacuum coating a substrate, an evaporation substance containing gallium in bivalent or trivalent form, is arranged together with metallic gallium in the evaporation chamber, that is closed on all sides and has a vapor exit opening. The evaporation substance is evaporated, and the vapor is brought into contact with the metallic gallium, causing the bivalent or trivalent gallium to be reduced to monovalent gallium in a vapor stream which subsequently exits in the direction of the substrate via the vapor exit opening.