Phosphorus Or Boron Containing Coating (e.g., Aluminum Boride, Boron Phosphide Etc.) Patents (Class 427/255.38)
  • Patent number: 9831083
    Abstract: A film containing a prescribed element and carbon is formed on a substrate, by performing a cycle a prescribed number of times, the cycle including: supplying an organic-based source containing a prescribed element and a pseudo catalyst including at least one selected from the group including a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and confining the organic-based source and the pseudo catalyst in the process chamber; maintaining a state in which the organic-based source and the pseudo catalyst are confined in the process chamber; and exhausting an inside of the process chamber.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: November 28, 2017
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Daigo Yamaguchi, Tsukasa Kamakura, Hiroshi Ashihara, Tsuyoshi Takeda, Taketoshi Sato
  • Publication number: 20150118395
    Abstract: Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
    Type: Application
    Filed: December 31, 2014
    Publication date: April 30, 2015
    Inventors: Roy Gerald GORDON, Jill S. BECKER, Dennis HAUSMANN, Seigi SUH
  • Publication number: 20150099108
    Abstract: A process for producing a hard material layer on a substrate includes depositing a TiCNB hard material layer by chemical vapor deposition (CVD) from a gas system including a titanium source, a boron source, at least one nitrogen source and at least one carbon source, in which the carbon source includes an alkane having at least two carbon atoms, an alkene or an alkyne. A cutting tool includes a substrate to which a TiCNB hard material layer has been applied, in which a ratio of carbon atoms (C) to nitrogen atoms (N) in the TiCxNyB1-x-y system deposited on the substrate is 0.70?X?1.0, preferably 0.75?X?0.85, and a polished section through the substrate and the hard material layer is substantially free of an eta phase following Murakami etching.
    Type: Application
    Filed: February 25, 2013
    Publication date: April 9, 2015
    Inventor: Christoph Czettl
  • Publication number: 20150086460
    Abstract: Provided is a method for producing a high-quality boron nitride film grown by using a borazine oligomer as a precursor through a metal catalyst effect. The method solves the problems, such as control of a gaseous precursor and vapor pressure control, occurring in CVD(Chemical vapor deposition) according to the related art, and a high-quality hexagonal boron nitride film is obtained through a simple process at low cost. In addition, the hexagonal boron nitride film may be coated onto various structures and materials. Further, selective coating is allowed so as to carry out coating in a predetermined area and scale-up is also allowed. Therefore, the method may be useful for coating applications of composite materials and various materials.
    Type: Application
    Filed: November 18, 2013
    Publication date: March 26, 2015
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Myung Jong KIM, Sungchan PARK, Hyunjin CHO, Sukang BAE, Jin-Hyung PARK, Jung Ho KANG, Sang Ook KANG, Changhyup LEE
  • Patent number: 8974857
    Abstract: Disclosed is to a method for manufacturing a cobalt boride coating layer on the surface of iron-based metals by using a pack cementation process. In particular, the present invention relates to a method for manufacturing a cobalt boride coating layer by forming a composite coating layer on the surface of steels which is composed of an outmost layer having a composition of cobalt boride (Co2B) and an inner layer having a composition of iron-cobalt boride ((Fe,Co)2B). Since the cobalt boride coating layer is a compact coating layer having little defects such as pores, it can improve physical properties such as corrosion resistance, wear resistance and oxidation resistance of steels.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: March 10, 2015
    Assignee: Korea Institute of Science and Technology
    Inventors: Jin Kook Yoon, Jung Man Doh, Sang Whan Park
  • Publication number: 20150037612
    Abstract: A surface-coated cutting tool of the present invention includes a base material and a coating film formed on the base material. The coating film includes at least one TiB2 layer. The TiB2 layer has TC (100) that shows a maximum value in an orientation index TC (hkl), or has a ratio I (100)/I (101) of 1.2 or more between an X-ray diffraction intensity I (100) of a (100) plane and an X-ray diffraction intensity I (101) of a (101) plane.
    Type: Application
    Filed: August 10, 2012
    Publication date: February 5, 2015
    Applicant: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Anongsack Paseuth, Susumu Okuno, Hideaki Kanaoka, Erika Iwai, Takahiro Ichikawa
  • Publication number: 20140363574
    Abstract: Ceramic matrix composite materials and a process for making said composite materials are disclosed.
    Type: Application
    Filed: December 26, 2013
    Publication date: December 11, 2014
    Inventors: Andrew J. Lazur, Adam L. Chamberlain
  • Patent number: 8852406
    Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: October 7, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Young Joon Baik, Jong Keuk Park, Wook Seong Lee
  • Patent number: 8846148
    Abstract: A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group.
    Type: Grant
    Filed: November 15, 2006
    Date of Patent: September 30, 2014
    Assignee: Nippon Shokubai Co., Ltd.
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Tetsuya Yamamoto, Yasutaka Nakatani, Takuya Kamiyama
  • Publication number: 20140287249
    Abstract: The invention relates to a method for coating, by means of a chemical vapour deposition (CVD) technique, a part with a coating (PAO) for protecting against oxidation. The method enables the preparation of a refractory coating for protecting against oxidation, having a three-dimensional microstructure, which ensures the protection against oxidation at a high temperature, generally at a temperature above 1200° C., for materials that are sensitive to oxidation, such as composite materials, and in particular carbon/carbon composite materials.
    Type: Application
    Filed: November 23, 2012
    Publication date: September 25, 2014
    Inventors: Alexandre Allemand, Olivier Szwedek, Jean-Francois Epherre, Yann Le Petitcorps
  • Patent number: 8747947
    Abstract: Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.
    Type: Grant
    Filed: September 16, 2011
    Date of Patent: June 10, 2014
    Assignee: Empire Technology Development, LLC
    Inventor: Seth Miller
  • Publication number: 20140113074
    Abstract: Improved methods for synthesizing large area thin films are disclosed, which result in films of enhanced width. The methods comprise providing a separator material which is rolled or wound up, along with the metallic foil substrate on which the thin film is to be deposited, to form a coiled composite which is then subjected to conventional chemical vapor deposition. Optionally, a winding tool may be used to aid in the rolling process. The methods enable a many-fold increase in the effective width of the substrate to be achieved.
    Type: Application
    Filed: October 19, 2012
    Publication date: April 24, 2014
    Applicant: BLUESTONE GLOBAL TECH LTD.
    Inventors: Xuesong LI, Jia-Hung WU
  • Publication number: 20130309402
    Abstract: The invention provides methods and apparatus for supporting a substrate in a chemical vapor deposition reactor, and methods and apparatus for synthesizing large area thin films. The invention provides a substrate support assembly comprising at least two interdigitable substrate support fixtures, each fixture carrying at least one finger-like formation for engaging and positioning the substrate during the deposition process that creates the thin film. When two such fixtures are interdigitated, the substrate may be positioned not only in between and around the finger-like substrate engagement members, but also on the outside of each fixture, thus achieving a many-fold increase in the effective width of the substrate.
    Type: Application
    Filed: May 18, 2012
    Publication date: November 21, 2013
    Inventors: Xuesong Li, Yu-Ming Lin, Chun-Yung Sung
  • Publication number: 20130295387
    Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.
    Type: Application
    Filed: January 18, 2013
    Publication date: November 7, 2013
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Young Joon BAIK, Jong Keuk PARK, Wook Seong LEE
  • Patent number: 8568686
    Abstract: A method for the fabrication of nanostructured semiconducting, photoconductive, photovoltaic, optoelectronic and electrical battery thin films and materials at low temperature, with no molecular template and no organic contaminants. High-quality metal oxide semiconductor, photovoltaic and optoelectronic materials can be fabricated with nanometer-scale dimensions and high dopant densities through the use of low-temperature biologically inspired synthesis routes, without the use of any biological or biochemical templates.
    Type: Grant
    Filed: April 18, 2007
    Date of Patent: October 29, 2013
    Assignee: The Regents of the University of California
    Inventors: Daniel E. Morse, Birgit Schwenzer, John R. Gomm, Kristian M. Roth, Brandon Heiken, Richard Brutchey
  • Publication number: 20130277550
    Abstract: A sampling cone of a mass spectrometer is disclosed having a metallic boride coating such as titanium diboride.
    Type: Application
    Filed: June 20, 2013
    Publication date: October 24, 2013
    Inventors: Gordon A. Jones, David S. Douce, Amir Farooq
  • Patent number: 8496995
    Abstract: Encapsulated switches are disclosed which substitute non-toxic gallium alloy for mercury. In one embodiment, wetting of the interior surfaces of the housing is prevented by coating the surfaces with an electrically insulative inorganic non-metallic material, such as alumina or boron nitrate. According to another embodiment, a perfluorocarbon liquid is employed as the anti-wetting agent.
    Type: Grant
    Filed: July 11, 2011
    Date of Patent: July 30, 2013
    Assignee: Thermo Fisher Scientific, Inc.
    Inventors: Marcos Hernandez, Carl Rosenblatt
  • Patent number: 8420170
    Abstract: Disclosed is a deposition process for forming a glass film. An embodiment comprising the steps of disposing a substrate in a chemical vapor deposition chamber and exposing the substrate surface to a SiO2 precursor gas, a carrier gas, and optionally a dopant gas in the presence of ozone and exposing the reaction volume of the gases above the substrate surface to a high intensity light source.
    Type: Grant
    Filed: July 26, 2010
    Date of Patent: April 16, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Ravi Iyer
  • Patent number: 8414986
    Abstract: A method of forming a cutting element that includes placing at least one cutting element in an inner surface of at least one hollow tubular member such that at least a portion of the at least one cutting element is exposed; generating plasma within the hollow portion of the tubular; and depositing at least one refractory metal or sp3 carbon-containing coating on an exposed surface of the at least one cutting element is disclosed.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: April 9, 2013
    Assignee: Smith International, Inc.
    Inventor: Madapusi K. Keshavan
  • Publication number: 20130045334
    Abstract: The present disclosure relates generally to hardface coating systems and methods for metal alloys and other materials for wear and corrosion resistant applications. More specifically, the present disclosure relates to hardface coatings that include a network of titanium monoboride (TiB) needles or whiskers in a matrix, which are formed from titanium (Ti) and titanium diboride (TiB2) precursors by reactions enabled by the inherent energy provided by the process heat associated with coating deposition and, optionally, coating post-heat treatment. These hardface coatings are pyrophoric, thereby generating further reaction energy internally, and may be applied in a functionally graded manner. The hardface coatings may be deposited in the presence of a number of fluxing agents, beta stabilizers, densification aids, diffusional aids, and multimode particle size distributions to further enhance their performance characteristics.
    Type: Application
    Filed: September 28, 2012
    Publication date: February 21, 2013
    Applicant: BABCOCK & WILCOX TECHNICAL SERVICES Y-12, L.L.C. Attn. Mike Renner
    Inventor: BABCOCK & WILCOX TECHNICAL SERVICES Y-
  • Publication number: 20130031794
    Abstract: This invention relates to a novel application of hard, low friction aluminum magnesium boride (AlMgB14, also known as BAM) based ceramic coatings to surfaces of razor components and in particular to blade edges of razor blades. On razor blade edges, these coatings may elevate blade performance, while also simplifying the manufacturing process.
    Type: Application
    Filed: July 30, 2012
    Publication date: February 7, 2013
    Inventors: Ronald Richard Duff, JR., Jeffrey Stuart Parker, Yongqing Ju, Xiandong Wang
  • Patent number: 8338825
    Abstract: Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: December 25, 2012
    Assignee: University of North Texas
    Inventor: Jeffry A. Kelber
  • Patent number: 8337950
    Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: December 25, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Yi Chen, Mihaela Balseanu, Isabelita Roflox, Li-Qun Xia, Derek R Witty
  • Publication number: 20120321791
    Abstract: A film forming method for forming a thin film including boron, nitrogen, silicon, and carbon on a surface of a processing target by supplying a boron containing gas, a nitriding gas, a silane-based gas, and a hydrocarbon gas in a processing container in which the processing target is accommodated to be vacuum sucked includes: a first process which forms a BN film by performing a cycle of alternately and intermittently supplying the boron-containing gas and the nitriding gas once or more; and a second process which forms a SiCN film by performing a cycle of intermittently supplying the silane-based gas, the hydrocarbon gas, and the nitriding gas once or more. Accordingly, the thin film including boron, nitrogen, silicon, and carbon with a low-k dielectric constant, an improved wet-etching resistance, and a reduced leak current can be formed.
    Type: Application
    Filed: June 15, 2012
    Publication date: December 20, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Keisuke SUZUKI, Kentaro KADONAGA, Yoshitaka MORI
  • Publication number: 20120304762
    Abstract: A method for producing a pyrolytic boron nitride (PBN) article comprises introducing a nitrogen containing gas and a boron containing gas into a heated reactor furnace under temperature and pressure conditions sufficient to form a PBN deposit and pulsing the flow of the reactant gases between an on and an off state. The method provides a multi-layered PBN article that exhibits a relatively weak bonding interface between adjacent PBN layers to allow for the layers to be peeled away from one another in a controlled manner.
    Type: Application
    Filed: June 3, 2011
    Publication date: December 6, 2012
    Inventors: Caixuan XU, Subbanna MANJUNATH, Takayuki TOGAWA
  • Patent number: 8246924
    Abstract: The present application is directed to methods of manufacturing calcium phosphate particles. In particular, the method is directed at eliminating the requirement for a sintering step in the manufacturing process. The method involves the atomization and combustion of one or more antecedent compositions containing calcium precursors, phosphorus precursors and hydrogen peroxide.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: August 21, 2012
    Assignee: HKPB Scientific Limited
    Inventor: Donncha Haverty
  • Patent number: 8227030
    Abstract: A process for producing a semiconductor device, in which in the formation of a boron doped silicon film from, for example, monosilane and boron trichloride by vacuum CVD technique, there can be produced a film excelling in inter-batch homogeneity with respect to the growth rate and concentration of a dopant element, such as boron. The process includes the step of performing the first purge through conducting at least once of while a substrate after treatment is housed in a reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto and the steps of performing the second purge through conducting at least once of after carrying of the substrate after treatment out of the reaction furnace, prior to carrying of a substrate to be next treated into the reaction furnace and while at least no product substrate is housed in the reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: July 24, 2012
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takaaki Noda, Kenichi Suzaki
  • Patent number: 8227031
    Abstract: In a method of producing a layered composite, wherein at least one layer including cubic boron nitride is deposited on a substrate and, during the deposition, 3 to 15 at % oxygen is added for assuming the nitrogen locations of the cubic boron-nitride grating or intermediate grating locations, thereby providing for cubic boron nitride layers with a thickness of at least 2 ?m without the formation of cracks.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: July 24, 2012
    Assignee: Karlsruher Institut Fuer Technologie
    Inventors: Sven Ulrich, Jian Ye, Konrad Sell, Michael Stüber
  • Patent number: 8221835
    Abstract: A process for producing a semiconductor device, in which in the formation of a boron doped silicon film from, for example, monosilane and boron trichloride by vacuum CVD technique, there can be produced a film excelling in inter-batch homogeneity with respect to the growth rate and concentration of a dopant element, such as boron. The process includes the step of performing the first purge through conducting at least once of while a substrate after treatment is housed in a reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto and the steps of performing the second purge through conducting at least once of after carrying of the substrate after treatment out of the reaction furnace, prior to carrying of a substrate to be next treated into the reaction furnace and while at least no product substrate is housed in the reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: July 17, 2012
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takaaki Noda, Kenichi Suzaki
  • Patent number: 8163344
    Abstract: A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.
    Type: Grant
    Filed: November 8, 2007
    Date of Patent: April 24, 2012
    Assignee: Specialty Materials, Inc.
    Inventors: Raymond J. Suplinskas, Janet Suplinskas, legal representative
  • Publication number: 20120094483
    Abstract: A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH4)4 gas by feeding H2 gas as carrier gas into a raw material container in which solid M(BH4)4 (where M is Zr or Hf) is accommodated to introduce a mixture gas of H2 gas and M(BH4)4 gas having a volume ratio of flow rates (H2/M(BH4)4) of 2 or more into the processing container, and deposit a MBx film (where M is Zr or Hf and x is 1.8 to 2.5) on the object using a thermal CVD.
    Type: Application
    Filed: October 14, 2011
    Publication date: April 19, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Takayuki KOMIYA
  • Patent number: 8158200
    Abstract: Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by repeated atomic layer deposition (ALD) of a boron-halide or organoborane precursor and NH3 onto a substrate followed by a high temperature anneal. Graphene can then be formed on an ordered BN(111) film by depositing carbon on the ordered surface of the BN(111) film.
    Type: Grant
    Filed: August 18, 2009
    Date of Patent: April 17, 2012
    Assignee: University of North Texas
    Inventor: Jeffry Kelber
  • Patent number: 8142847
    Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
    Type: Grant
    Filed: March 3, 2008
    Date of Patent: March 27, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik, Qin-Min Wang
  • Publication number: 20120045700
    Abstract: Triethylboron is a useful precursor for depositing films in an atomic layer deposition process. This precursor is useful for depositing boron containing films. Boron containing films are excellent lubricating coatings for zinc powders, improving their flow properties and simplifying powder handling. This makes the coated zinc powders especially useful for battery applications in which a zinc powder is used as an anode material.
    Type: Application
    Filed: May 20, 2011
    Publication date: February 23, 2012
    Inventors: David M. King, Dean S. Dinair
  • Patent number: 7985713
    Abstract: A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10?5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.
    Type: Grant
    Filed: March 22, 2006
    Date of Patent: July 26, 2011
    Assignee: Incorporated National University Iwate University
    Inventors: Yoshitomo Harada, Masahito Yoshizawa, Haruyuki Endo
  • Patent number: 7959733
    Abstract: A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: June 14, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Kazuhide Hasebe, Pao-Hwa Chou, Chaeho Kim
  • Publication number: 20110121283
    Abstract: A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is a neutralized acid having a pKa of 5 or less, wherein at least 90% of the acid groups are neutralized. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
    Type: Application
    Filed: November 20, 2009
    Publication date: May 26, 2011
    Inventor: David H. Levy
  • Publication number: 20100279093
    Abstract: A coated article, in particular a tool for cutting machining, has at least one titanium diboride layer which has been deposited by a thermal CVD process and has a thickness of at least 0.1 ?m. The titanium diboride layer has an extremely fine-grained microstructure with an average grain size of not more than 50 nm.
    Type: Application
    Filed: December 4, 2008
    Publication date: November 4, 2010
    Applicant: CERATIZIT AUSTRIA GMBH
    Inventors: Wolfgang Wallgram, Uwe Schleinkofer, Karl Gigl, Josef Thurner
  • Publication number: 20100129994
    Abstract: A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.
    Type: Application
    Filed: February 27, 2008
    Publication date: May 27, 2010
    Inventors: Yousef Awad, Sebastien Allen, Michael Davies, Alexandre Gaumond, My Ali El Khakani, Riadh Smirani
  • Patent number: 7674728
    Abstract: A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber.
    Type: Grant
    Filed: March 29, 2007
    Date of Patent: March 9, 2010
    Assignee: ASM America, Inc.
    Inventors: Michael A Todd, Ivo Raaijmakers
  • Patent number: 7638161
    Abstract: A method and apparatus for controlling dopant concentration during borophosphosilicate glass film deposition on a semiconductor wafer to reduce consumption of nitride on the semiconductor wafer. In one embodiment of the invention, the method starts by placing a substrate having a nitride layer in a reaction chamber and providing a silicon source, an oxygen source and a boron source into the reaction chamber while delaying providing a phosphorous source into the reaction chamber to form a borosilicate glass layer over the nitride layer. The method continues by providing the silicon, oxygen, boron and phosphorous sources into the reaction chamber to form a borophosphosilicate film over the borosilicate glass layer.
    Type: Grant
    Filed: July 20, 2001
    Date of Patent: December 29, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Kevin Mukai, Shankar Chandran
  • Publication number: 20090286674
    Abstract: A process for the preparation of active surfaces terminated by a desired form of organic, organic-inorganic, or inorganic nature comprising growing with a gas phase deposition technique preferable the ALCVD (atomic layer chemical vapour deposition) technique. As an example, trimethylaluminium (TMA), hydroquinone (Hq) and phloroglucinol (Phl) have been used as precursors to fabricate surfaces that are terminated by hydroxyl groups attached to aromates. Further types of active surfaces are described. These surfaces can be used to produce surfaces: suitable for adhesion through the use of glue or other adhesive, providing receptors for biological molecules, making the surfaces biocompatible, of catalytically active materials, where upon subsequent types of chemical reactions can take place, with different degrees of wetting properties.
    Type: Application
    Filed: June 19, 2007
    Publication date: November 19, 2009
    Applicant: UNIVERSITETET I OSLO
    Inventors: Helmer Fjellvag, Ola Nilsen
  • Publication number: 20090232987
    Abstract: The present invention provides a composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. By using the composition, physical properties such as low dielectric constant property and mechanical strength of the thin film produced from a borazine-ring-containing compound can be improved.
    Type: Application
    Filed: November 15, 2006
    Publication date: September 17, 2009
    Applicant: NIPPON SHOKUBAI CO., LTD.
    Inventors: Teruhiko Kumada, Hideharu Nobutoki, Naoki Yasuda, Tetsuya Yamamoto, Yasutaka Nakatani, Takuya Kamiyama
  • Patent number: 7556839
    Abstract: A process for producing a semiconductor device, in which in the formation of a boron doped silicon film from, for example, monosilane and boron trichloride by vacuum CVD technique, there can be produced a film excelling in inter-batch homogeneity with respect to the growth rate and concentration of a dopant element, such as boron. The process includes the step of performing the first purge through conducting at least once of while a substrate after treatment is housed in a reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto and the steps of performing the second purge through conducting at least once of after carrying of the substrate after treatment out of the reaction furnace, prior to carrying of a substrate to be next treated into the reaction furnace and while at least no product substrate is housed in the reaction furnace, vacuuming of the reaction furnace and inert gas supply thereto.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: July 7, 2009
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Takaaki Noda, Kenichi Suzaki
  • Publication number: 20090169781
    Abstract: A pyrolytic boron-nitride material is disclosed having an in-plane thermal conductivity of no more than about 30 W/m-K and a through-plane thermal conductivity of no more than about 2 W/m-K. The density is less than 1.85 g/cc.
    Type: Application
    Filed: December 31, 2007
    Publication date: July 2, 2009
    Inventors: Marc Schaepkens, Demetrius Sarigiannis, Douglas Longworth
  • Patent number: 7510742
    Abstract: A composite is described which has particular utility in the formation of components for gas turbine engines. The composite broadly comprises a substrate having a surface and at least one layer of a BN/Si3N4 coating on the substrate surface. The coating preferably is formed by alternative layers of a BN material and a Si3N4 material. The substrate may be a cloth material with fibers, such as SiC fibers, woven therein.
    Type: Grant
    Filed: November 18, 2005
    Date of Patent: March 31, 2009
    Assignee: United Technologies Corporation
    Inventor: Michael Kmetz
  • Publication number: 20090017208
    Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
    Type: Application
    Filed: March 3, 2008
    Publication date: January 15, 2009
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik, Qing Min Wang
  • Publication number: 20080304131
    Abstract: An electrochromic device includes a first conductive layer, a single-layer or dual-layer ion conductor layer, and a second conductive layer. The layers are deposited using PVD, CVD, PECVD, atomic layer deposition, pulsed laser deposition, plating, or sol-gel techniques.
    Type: Application
    Filed: December 13, 2007
    Publication date: December 11, 2008
    Inventor: Paul Nguyen
  • Publication number: 20080299313
    Abstract: A film forming apparatus that forms a film on an inner wall of a tubular body by a chemical vapor deposition method is provided. The film forming apparatus includes: a source material storage section; a process gas generation section that forms process gas containing source material supplied from the source material storage section; a film forming section that forms a film on an inner wall of the tubular body; a process gas supply tube that connects to the tubular body and supplies the process gas from the process gas generation section to the tubular body; and a process gas discharge tube that connects to the tubular body and discharges the process gas that has passed through the tubular body, wherein the film forming section includes a retaining section that holds the tubular body.
    Type: Application
    Filed: May 2, 2008
    Publication date: December 4, 2008
    Applicant: Seiko Epson Corporation
    Inventor: Takeshi Kijima
  • Patent number: 7445672
    Abstract: Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.
    Type: Grant
    Filed: August 14, 2006
    Date of Patent: November 4, 2008
    Assignees: NGK Insulators, Ltd., Dowa Mining Co., Ltd.
    Inventor: Tomohiko Shibata