Inorganic Oxide Containing Plating Or Implanted Material Patents (Class 427/529)
  • Publication number: 20110311732
    Abstract: The subject of the invention is a heat treatment process by flame treatment of at least one thin film deposited on a glass substrate (1) running in the path of at least one flame treatment device comprising at least one burner (2), said treatment being able to increase the degree of crystallization of said at least one thin film and/or to increase the size of the crystallites in said at least one thin film, said process being characterized in that the maximum transient bending “b” is less than 150 mm and respects the following condition: b?0.
    Type: Application
    Filed: March 10, 2010
    Publication date: December 22, 2011
    Applicant: SAINT-GOBAIN GLASS FRANCE
    Inventors: Guillaume Bignon, Nicolas Nadaud, Binh Tran, Se-Jong Kim
  • Publication number: 20110300324
    Abstract: The present invention provides an optical recording medium realizing reduced manufacturing cost of the optical recording medium. An optical recording medium 10 includes: a substrate 1; a recording layer 2 formed on the substrate 1, containing In, Sn, Pd, and oxygen, and containing oxygen atoms more than stoichiometric composition of the case where the In and the Sn are completely oxidized; and a light transmission layer 3 formed on the recording layer 2.
    Type: Application
    Filed: March 10, 2010
    Publication date: December 8, 2011
    Applicant: SONY CORPORATION
    Inventor: Takeshi Miki
  • Publication number: 20110297167
    Abstract: Smoking article components, cigarettes, methods for making cigarettes and methods for smoking cigarettes are provided that use transition metal oxide clusters capable of catalyzing and/or oxidizing the conversion of carbon monoxide to carbon dioxide and/or adsorbing carbon monoxide. Cut filler compositions, cigarette paper and cigarette filter material can comprise transition metal oxide clusters.
    Type: Application
    Filed: August 15, 2011
    Publication date: December 8, 2011
    Applicant: PHILIP MORRIS USA INC.
    Inventors: Budda V. Reddy, Firooz Rasouli, Mohammad R. Hajaligol, S. N. Khanna
  • Publication number: 20110269619
    Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.
    Type: Application
    Filed: April 19, 2011
    Publication date: November 3, 2011
    Applicant: University of North Texas
    Inventors: Guido Fridolin Verbeck, Stephen Davila
  • Publication number: 20110240934
    Abstract: An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.
    Type: Application
    Filed: May 19, 2011
    Publication date: October 6, 2011
    Applicant: SUMITOMO METAL CO., LTD.
    Inventors: Yoshiyuki Abe, Tokuyuki Nakayama, Go Ohara, Riichiro Wake
  • Publication number: 20110195261
    Abstract: The present invention relates to a coating for workpieces with at least one layer, the at least one layer comprising metal components represented by AlxCr1?x wherein x is an atomic ratio meeting 0?x?0.84 and comprising non metallic components represented by O1?yZy where Z is at least one Element selected from the group N, B, C and 0?y?0.65, preferably y?0.5 characterized in that the coating comprises at least partially a cubic non gamma Cr and oxide comprising phase in such a way that the x-ray diffraction pattern shows formation of cubic phase which is not the cubic phase of CrN.
    Type: Application
    Filed: October 5, 2009
    Publication date: August 11, 2011
    Applicant: OERLIKON TRADING AG, TRUBBACH
    Inventor: Denis Kurapov
  • Publication number: 20110195196
    Abstract: The present invention relates to a method for manufacturing a transparent oxide electrode using an electron beam post-treatment. The method for manufacturing a transparent oxide electrode comprises the steps of: (a) forming a thin film for the transparent anode on a substrate; and (b) irradiating an electron beam to the surface of the thin film for the transparent oxide electrode. The method of the present invention is characterized in that no additional heat treatment process is performed after step (a). The method for manufacturing a transparent oxide electrode according to the present invention does not perform a high-temperature heat treatment process but rather performs a low-temperature electron beam irradiation process as a post-treatment, thus obtaining a transparent oxide electrode having excellent characteristics in case where the substrate is made of glass, Pyrex, quartz or even a polymer material which has a low resistance against heat.
    Type: Application
    Filed: October 5, 2009
    Publication date: August 11, 2011
    Inventor: Yong Hwan Kim
  • Patent number: 7988836
    Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.
    Type: Grant
    Filed: October 13, 2009
    Date of Patent: August 2, 2011
    Assignee: Guardian Industries Corp.
    Inventor: Vijayen S. Veerasamy
  • Patent number: 7981483
    Abstract: Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: July 19, 2011
    Assignee: TEL Epion Inc.
    Inventors: Noel Russell, Steven Sherman, John J. Hautala
  • Patent number: 7964238
    Abstract: A method of making a heat treated (HT) coated article to be used in shower door applications, window applications, or any other suitable applications where transparent coated articles are desired. For example, certain embodiments of this invention relate to a method of making a coated article including a step of heat treating a glass substrate coated with at least a layer of or including diamond-like carbon (DLC) and an overlying protective film (e.g., of or including zinc oxide) thereon. In certain example embodiments, the protective film may be ion beam treated with at least carbon ions. It has been found that the ion beam treatment improves the shelf-life of the product prior to HT. Following and/or during heat treatment (e.g., thermal tempering, or the like), the protective film may be removed.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: June 21, 2011
    Assignee: Guardian Industries Corp.
    Inventors: Nestor P. Murphy, Maximo Frati, Rudolph Hugo Petrmichl, Jiangping Wang
  • Publication number: 20110143048
    Abstract: A method for depositing a solid film of ZnO onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains a source of Zn, a source of 0, and multiple ligands to further control solution stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated.
    Type: Application
    Filed: February 9, 2011
    Publication date: June 16, 2011
    Inventor: Isaiah O. Oladeji
  • Publication number: 20110039035
    Abstract: Tunable variable emissivity materials, methods for fabricating tunable variable emissivity materials, and methods for controlling the temperature of a spacecraft using tunable variable emissivity materials have been provided. In an exemplary embodiment, a variable emissivity material has the formula M1(1?(x+y))M2xM3yMnO3, wherein M1 comprises lanthanum, praseodymium, scandium, yttrium, neodymium or samarium, M2 comprises an alkali earth metal, M3 comprises an alkali earth metal that is not M2, and x, y, and (x+y) are less than 1. The material has a critical temperature (Tc) in the range of about 270 to about 320K and a transition width is less than about 30K.
    Type: Application
    Filed: February 15, 2010
    Publication date: February 17, 2011
    Inventors: Robert Cumberland, William B. Barvose-Carter, Adam F. Gross
  • Publication number: 20100296943
    Abstract: A sintered material for a thermal barrier coating is provided. The sintered material comprises Gd2Zr2O7 doped with yttria (Y2O3). The sintered material exhibits excellent thermal barrier characteristics and has improved durability and high hardness. Therefore, the sintered material is used to form thermal barrier coatings on the surfaces of a variety of machine parts, thereby achieving high reliability and increased lifetime of the machine parts.
    Type: Application
    Filed: August 31, 2007
    Publication date: November 25, 2010
    Inventors: Kee Sung Lee, Kyu Ick Jung, Sang Hyun Park, Jin-Hyon Lee, Je-Hyun Lee, Yeon-Gil Jung, Ungyu Paik
  • Patent number: 7838083
    Abstract: Methods and apparatus for depositing thermal barrier coatings on gas turbine blades and vanes using Electron Beam Physical Vapor Deposition (EBPVD) combined with Ion Beam Assisted Deposition (IBAD).
    Type: Grant
    Filed: January 28, 2006
    Date of Patent: November 23, 2010
    Assignee: Sandia Corporation
    Inventors: Dennis L. Youchison, Jimmie M. McDonald, Thomas J. Lutz, Michail A. Gallis
  • Patent number: 7838061
    Abstract: Disclosed herein is a method of fabricating a high temperature superconducting film in a vacuum chamber through auxiliary cluster beam spraying using an evaporation method, wherein a high temperature superconducting material is deposited on a substrate in a vapor state by evaporating the high temperature superconducting material, and at the same time, a cluster beam material is formed into gas atoms by heating the cluster beam material charged in a housing, and the formed gas atoms pass through a nozzle of an inlet of the housing and then are sprayed and grown on the substrate in the form of the cluster beam, thereby forming pinning centers in the high temperature superconducting film.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: November 23, 2010
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Sang Soo Oh, Ho Seop Kim, Kyu Jung Song, Do Jun Youm, Sun Mi Lim, Yong Hwan Jung, Sang Moo Lee, Ye Hyun Jung, Jae Eun Yoo
  • Publication number: 20100209718
    Abstract: An oxide film, an oxide film coated material and a method for forming the oxide film, which oxide film is more excellent in wear resistance than existing aluminum oxide-based oxide films are provided. The oxide film of the invention is an oxide film consisting of (Zr1-a-b-cAlaMgbYc) (O1-xNx), characterized in that the following formulas (1)-(5) are satisfied (first invention) 0?a?0.7 ??formula (1) 0?b?0.15 ??formula (2) 0?c?0.15 ??formula (3) 0<b+c ??formula (4) 0?x?0.5 ??formula (5) (wherein a represents an atomic ratio of Al, b represents an atomic ratio of Mg, c represents an atomic ratio of Y, 1-a-b-c represents an atomic ratio of Zr, x represents atomic ratio of N, and 1-x represents an atomic ratio of O.
    Type: Application
    Filed: July 9, 2008
    Publication date: August 19, 2010
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.)
    Inventor: Kenji Yamamoto
  • Publication number: 20100189978
    Abstract: The present invention relates to a cutting tool having a base body and a multilayered coating applied thereto, wherein at least two layers of the multilayered coating arranged one on top of the other contain, or consist of, metal oxide of the same metal or of different metals. In order to create cutting tools which are better than those of the prior art, it is proposed according to the invention that the at least two metal oxide layers arranged one on top of the other be produced successively by different PVD-processes, selected from i) reactive magnetron sputtering (RMS), ii) arc vapour deposition (arc-PVD), iii) ion plating, iv) electron beam vapour deposition and v) laser deposition, wherein modifications of the respective processes i) to v) do not constitute different PVD-processes.
    Type: Application
    Filed: May 16, 2008
    Publication date: July 29, 2010
    Applicant: Walter AG
    Inventor: Veit Schier
  • Publication number: 20100075157
    Abstract: A scratch resistant coated article is provided which is also resistant to attacks by at least some fluorine-inclusive etchant(s) for at least a period of time. In certain example embodiments, an anti-etch layer(s) is provided on a glass substrate in order to protect the glass substrate from attacks by fluorine-inclusive etchant(s), a scratch resistant layer of or including DLC is provided over the anti-layer(s), and a seed layer is provided between the anti-layer(s) and the scratch resistant layer so as to facilitate the adhesion of the scratch resistant layer while also helping to protect the anti-layer(s). Optionally, a base layer(s) or underlayer(s) may be under at least the anti-etch layer(s).
    Type: Application
    Filed: September 19, 2008
    Publication date: March 25, 2010
    Applicant: Guardian Industries Corp.
    Inventors: Rudolph Hugo Petrmichl, Michael P. Remington, JR., Jose Nunez-Regueiro, Maxi Frati, Greg Fisher
  • Publication number: 20100062175
    Abstract: A method for manufacturing an optical waveguide layer includes a substrate that is prepared, onto which a first part-layer is first grown. Subsequently, a second part-layer of the waveguide layer, consisting of the same material as the first part-layer, is grown on the first part-layer. The second part-layer is bombarded with ions as it grows. The method permits manufacturing optical waveguide layers on temperature-sensitive polymer substrates.
    Type: Application
    Filed: September 9, 2009
    Publication date: March 11, 2010
    Inventors: Nancy Bollwahn, Ulrike Schulz, Peter Munzert, Norbert Kaiser
  • Publication number: 20100012349
    Abstract: An object of the invention is to provide a polycrystalline thin film which includes an intermediate layer that is made thinner while keeping high crystal orientation so as to prevent warpage of a substrate resulting from internal stress of the film. A polycrystalline thin film according to the invention includes an intermediate layer formed by a first layer and a second layer laminated in this order and provided on a metal substrate. The first layer has a rock-salt crystal structure and the second layer has a fluorite crystal structure.
    Type: Application
    Filed: September 29, 2009
    Publication date: January 21, 2010
    Applicants: Fujikara Ltd., International Superconductivity Technology Center
    Inventors: Yasuhiro IIJIMA, Satoru Hanyu
  • Publication number: 20090324845
    Abstract: A method for producing an orientation film that causes orientation of a liquid crystal includes a process of vapor depositing an inorganic oxide from an oblique direction on a substrate and forming an obliquely vapor-deposited film composed of a plurality of columnar structural bodies tilted at an angle equal to or greater than 20° from a substrate normal and a process of performing ion beam irradiation onto the plurality of columnar structural bodies constituting the obliquely vapor-deposited film. An ion beam irradiation direction in the ion beam irradiation process is in a plane including a vapor deposition direction of the inorganic oxide and the substrate normal and an angle of the ion beam irradiation direction ?IB measured from the direction of the columnar structural bodies is within a range of +50°??IB?+100° (?IB is taken to be positive on a side where the ion beam irradiation direction approaches the substrate normal from the direction of the columnar structural bodies).
    Type: Application
    Filed: June 28, 2009
    Publication date: December 31, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yohei Ishida, Hirokatsu Miyata, Akira Sakai
  • Publication number: 20090317958
    Abstract: Ion Implantation is used to form the memristor material and electrode structure with memristance. First, numerous electron-rich element atoms are implanted into a layer made of transition metal or non-metal. Then, a treating process (such as annealing) is proceeded to expel some electron-rich element atoms away the layer. After that, some electron-rich element vacancy rich regions are formed inside the layer, and then a memristor material is formed. Significantly, the usage of ion implantation can precisely control and flexibly adjust the distribution of the implanted atoms, and then both the amount and distribution of these depleted regions can be effectively adjusted. Hence, the quality of the memristor material is improved.
    Type: Application
    Filed: June 17, 2009
    Publication date: December 24, 2009
    Inventors: Daniel TANG, Hong Xiao
  • Patent number: 7622161
    Abstract: A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate. Then, a protective layer is formed on the substrate over the DLC inclusive layer. During heat treatment (HT), the protective layer prevents the DLC inclusive layer from significantly burning off. Thereafter, the resulting coated glass substrate may be used as desired, it having been HT and including the protective DLC inclusive layer.
    Type: Grant
    Filed: July 15, 2004
    Date of Patent: November 24, 2009
    Assignee: Guardian Industries Corp.
    Inventor: Vijayen S. Veerasamy
  • Patent number: 7585396
    Abstract: A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. Ion beam treatment is performed on a layer(s) of the coating. For example, an overcoat layer (e.g., of silicon nitride) of a low-E coating may be ion beam treated in a manner so as to cause the ion beam treated layer to include (a) nitrogen-doped Si3N4, and/or (b) nitrogen graded silicon nitride. It has been found that this permits durability of the coated article to be improved.
    Type: Grant
    Filed: June 25, 2004
    Date of Patent: September 8, 2009
    Assignee: Guardian Industries Corp.
    Inventor: Vijayen S. Veerasamy
  • Patent number: 7578889
    Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: August 25, 2009
    Assignee: Lam Research Corporation
    Inventors: Hong Shih, Yaobo Yin, Shun Jackson Wu, Armen Avoyan, John E. Daugherty, Linda Jiang
  • Publication number: 20090141357
    Abstract: The present invention relates to a plastic lens comprising a multilayer antireflective film and to a method for manufacturing the same. The plastic lens has a multilayer antireflective film present on the surface of a plastic lens substrate, either directly or through another layer. The multilayer antireflective film comprises a composite layer in which at least two metal oxide layers, containing an identical metal element but different quantities of oxygen, are adjacent. In the method for manufacturing the above plastic lens, each of the metal oxide layers constituting said composite layer is formed by employing a single vaporization source and by vapor depositing adjacent layers under differing conditions of partial pressure of reactive oxygen gas.
    Type: Application
    Filed: November 25, 2008
    Publication date: June 4, 2009
    Applicant: HOYA CORPORATION
    Inventors: Hitoshi KAMURA, Yukihiro Takahashi, Hisao Kawai
  • Publication number: 20090110915
    Abstract: A method for a new universal nucleation-layer/diffusion barrier, which is based on amorphous films of Si—O and Si—N for ion-beam-assisted deposition (IBAD) process. Unlike other nucleation layers that were used in the past, this process works on a variety of substrates (glass, Hastelloy tape, Cu), with varying surface roughness, and with a wide range of thickness. In addition, this new material system of Si—O (and Si—N) is ideally suited for oxide (and nitride) based multilayer stacks. As importantly, the flexibility in nucleation layer thickness allows the nucleation layer to be an effective diffusion barrier, and to be grown at room temperature, while the IBAD layer and subsequent epitaxial layers can be grown much thinner than usual.
    Type: Application
    Filed: October 24, 2007
    Publication date: April 30, 2009
    Applicant: LOS ALAMOS NATIONAL SECURITY, LLC
    Inventor: Alp T. FINDIKOGLU
  • Patent number: 7510786
    Abstract: A coated article is provided which includes a layer including titanium oxycarbide. In order to form the coated article, a layer of titanium oxide is deposited on a substrate by sputtering or the like. After sputtering of the layer including titanium oxide, an ion beam source(s) is used to implant at least carbon ions into the titanium oxide. When implanting, the carbon ions have sufficient ion energy so as to knock off oxygen (0) from TiOx molecules so as to enable a substantially continuous layer comprising titanium oxycarbide to form near a surface of the previously sputtered layer.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: March 31, 2009
    Assignee: Guardian Industries Corp.
    Inventors: Vijayen S. Veerasamy, Scott V. Thomsen, Rudolph Hugo Petrmichl
  • Publication number: 20090071934
    Abstract: Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.
    Type: Application
    Filed: July 31, 2008
    Publication date: March 19, 2009
    Inventors: Sang-moo Choi, Jung-hun Sung, Kwang-soo Seol, Woong-chul Shin, Sang-jin Park
  • Publication number: 20080305360
    Abstract: An organic light emitting device includes an organic light emitting diode on a substrate and an encapsulation layer covering the organic light emitting diode. The encapsulation layer includes an organic layer, an inorganic layer on the organic layer, and an intermixing region between the organic layer and the inorganic layer, the organic layer includes an organic material, the inorganic layer includes an inorganic material, and the intermixing region includes the organic material and the inorganic material.
    Type: Application
    Filed: June 5, 2008
    Publication date: December 11, 2008
    Inventors: Dong-Won Han, Yeon-Gon Mo, Jin-Ho Kwack
  • Publication number: 20080304131
    Abstract: An electrochromic device includes a first conductive layer, a single-layer or dual-layer ion conductor layer, and a second conductive layer. The layers are deposited using PVD, CVD, PECVD, atomic layer deposition, pulsed laser deposition, plating, or sol-gel techniques.
    Type: Application
    Filed: December 13, 2007
    Publication date: December 11, 2008
    Inventor: Paul Nguyen
  • Publication number: 20080280119
    Abstract: A ZnO-based conductive film having acceptable practical use moisture resistance, properties required for a transparent conductive film, and economical advantage and a method for manufacturing the film are provided. A first ZnO conductive film layer 1, optionally containing a Group III oxide dopant, is formed on a surface of a substrate 11 and a second ZnO conductive film layer 2, which is transparent and includes a Group III oxide different from a Group III oxide (if present) included in the first conductive film layer is formed on the first ZnO conductive film layer to form a multi-layer structure. The thickness of the first ZnO conductive film layer is preferably 5 to 50 nm, and the second and any following ZnO conductive film layers include a Group III oxide at a concentration of 7 wt % or less.
    Type: Application
    Filed: July 30, 2008
    Publication date: November 13, 2008
    Applicant: MURATA MANUFACTURING CO., LTD.
    Inventors: Yutaka Kishimoto, Souko Fukahori
  • Patent number: 7435443
    Abstract: The invention is directed to a method of producing the material that is unaffected by the low-temperature degradation, humidity-enhanced phase transformation typical of yttria-stabilized zirconia, as well as of yttria-stabilized tetragonal zirconia polycrystalline ceramic (Y-TZP). Because of the high fracture toughness and high mechanical strength, this class of materials is widely used, including as implants, such as for the packaging material for small implantable neural-muscular sensors and stimulators. The destructive phase transformation rate is dramatically reduced by coating the surface of the Y-TZP component with dense alumina by a physical vapor deposition process, preferably ion beam assisted deposition.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: October 14, 2008
    Assignee: Alfred E. Mann Foundation for Scientific Research
    Inventor: Guangqiang Jiang
  • Publication number: 20080152834
    Abstract: A method for forming a MgO barrier layer in a tunnel junction magnetoresistive sensor (TMR). The MgO barrier layer is deposited by an ion beam deposition process that results in a MgO barrier layer having exceptional, uniform properties and a well controlled oxygen content. The ion beam deposition of the barrier layer includes placing a wafer into an ion deposition chamber and placing Mg target into the chamber. An ion beam from an ion beam gun is directed at the target thereby dislodging Mg atoms from the target for deposition onto the wafer. Oxygen is introduced into the chamber by one or both of pumping molecular oxygen (O2) into the chamber and/or introducing oxygen ions into the chamber from a second ion beam gun. The use of ion beam deposition avoids oxygen poisoning of the Mg target, such as would occur using a more conventional plasma vapor deposition technique.
    Type: Application
    Filed: December 22, 2006
    Publication date: June 26, 2008
    Inventor: Mustafa Michael Pinarbasi
  • Patent number: 7389580
    Abstract: A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists in controlling the growth and stoichiometry of the film. The method allows for the fabrication of ultrathin films such as electrolyte films and dielectric films.
    Type: Grant
    Filed: March 27, 2007
    Date of Patent: June 24, 2008
    Assignee: Cymbet Corporation
    Inventors: Mark L. Jenson, Victor H. Weiss
  • Publication number: 20080095999
    Abstract: A protective film for polarizing plate having a substrate film of a resin material and, laminated on at least one surface thereof directly or via another layer, an antireflection layer, characterized in that the substrate film has a photoelastic coefficient of less than 9×10?12 Pa?1 and a saturated water-absorbing percentage of less than 0.05%, and the resin material constituting the substrate film exhibits a warpage percentage of 1% or less when the film having an average thickness of 50 ?m and a dimension of 100 mm×100 mm is allowed to stand at 60° C. and a humidity of 95% for 500 hours is below 1%; a method for preparing the protective film for polarizing plate; a polarizing plate with antireflection function comprising the protective film and a polarizing plate laminated thereon; and an optical article having the polarizing plate with antireflection function.
    Type: Application
    Filed: March 26, 2004
    Publication date: April 24, 2008
    Inventors: Masanori Yoshihara, Tetsuya Toyoshima, Yasumasa Yoshitomi
  • Publication number: 20080085375
    Abstract: An MgO protective layer formed on a front substrate of a plasma display panel and a method of manufacturing the protective layer are disclosed. The protective layer is manufactured by using an MgO pellet, which is simultaneously doped with a first doping material of BeO and/or CaO among alkali earth metals and a second material selected from the group consisting of Sc2O3, Sb2O3, Er2O3, Mo2O3, and Al2O3, as a deposition source through a vacuum deposition method. The protective layer remarkably improves a discharge efficiency of the PDP and shortens a discharge delay time, so that it is applied to a signal can PDP. Also, it lowers a manufacturing cost by reducing the number of electronic components.
    Type: Application
    Filed: February 16, 2007
    Publication date: April 10, 2008
    Inventors: Jeong Seok Kim, Seok Jung, You Han Kim, Jin Ho Pyo, Yong Seog Kim, Kyung Hyun Park
  • Patent number: 7338683
    Abstract: A method of forming a superconductive device is provided, including providing a substrate having a dimension ratio of not less than about 102, depositing a buffer film to overlie the substrate by ion beam assisted deposition utilizing and ion beam, monitoring spatial ion beam density of the ion beam over a target area, and depositing a superconductor layer to overlie the buffer film. Monitoring may be carried out by utilizing an ion detector having an acceptance angle of not less than 10°.
    Type: Grant
    Filed: May 10, 2004
    Date of Patent: March 4, 2008
    Assignee: Superpower, Inc.
    Inventors: Venkat Selvamanickam, Xuming Xiong
  • Patent number: 7320815
    Abstract: A method for forming an oriented film is provided for forming an oriented film on a base material by irradiating the surface of the base material where the oriented film will be formed with an ion beam comprising nitrogen ions from a direction inclined at a prescribed angle ?a with respect to the direction perpendicular to the surface, while evaporating carbon from an evaporation source. The prescribed angle, ?a, is preferably 45-89°. The accelerating voltage of the ion beam comprising nitrogen ions is preferably 100-500 V. The electric current of the ion beam comprising nitrogen ions is preferably 10-500 mA.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: January 22, 2008
    Assignee: Seiko Epson Corporation
    Inventors: Hidenobu Ota, Yukihiro Endo
  • Patent number: 7229675
    Abstract: The invention relates to metallurgy and mechanical engineering, in particular to the development of methods for providing metallic pieces with protective coatings with a view to improving the performance characteristics thereof. In accordance with the inventive method, a multilayer coating is formed by combining and simultaneously or consecutively using of various technologies including ion-plasma evaporation diffusive metallization and controlled atmosphere thermal treatment. The obtained coatings possess superior characteristics with respect to overall properties and are used for gas turbine construction, in particular, for manufacturing gas turbine vanes of aircraft engines.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: June 12, 2007
    Inventors: Anatoly Nikolaevich Paderov, Jury Genrikhovich Vexler
  • Patent number: 7204013
    Abstract: In a method of forming a magnetoresistive sensor, first and second magnetic leads are formed. Next, a junction of magnetic and electrically conductive material is formed between the first and second magnetic leads. Finally, the magnetic and electrical conductivity of an outer shell portion of the junction is reduced to form a constricted junction comprising a magnetic and electrically conductive junction core that is at least partially surrounded by the outer shell portion. Another aspect of the present invention is directed to the magnetoresistive sensor that is formed using the method.
    Type: Grant
    Filed: July 29, 2003
    Date of Patent: April 17, 2007
    Assignee: Seagate Technology LLC
    Inventors: Ge Yi, Suguo Huo
  • Patent number: 7147931
    Abstract: A coated steel strip product with a dense and hard abrasion resistant coating on one side or both sides of said strip substrate is provided. The thickness of said coating is in total maximally 25 ?m, the hardness of said coating is at least 600 HV and the tensile strength of the steel strip substrate is at least 1200 MPa. The coating is preferably applied by electron beam evaporation and the coating may be, e.g., of Al2O3. The coated metal strip is suitable for shaving equipment, medical instruments, utility and industrial knives as well as saw applications.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: December 12, 2006
    Assignee: Sandvik Intellectual Property AB
    Inventors: Anna Hultin Stigenberg, Mikael Schuisky
  • Patent number: 7147932
    Abstract: A coated steel strip product with a dense and hard abrasion resistant coating on one side or both sides of said strip. The thickness of said coating is in total maximally 25 ?m, the hardness of said coating is at least 600 HV and the tensile strength of the steel strip substrate is at least 1200 MPa. The coating is preferably applied by electron beam evaporation and the coating may be, e.g., of Al2O3. The coated metal strip is useful for the manufacturing of doctor and coater blades for paper and printing industry.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: December 12, 2006
    Assignee: Sandvik Intellectual Property AB
    Inventors: Anna Hultin Stigenberg, Mikael Schuisky
  • Patent number: 7112453
    Abstract: This invention provides methods of retentate chromatography for resolving analytes in a sample. The methods involve adsorbing the analytes to a substrate under a plurality of different selectivity conditions, and detecting the analytes retained on the substrate by desorption spectrometry. The methods are useful in biology and medicine, including clinical diagnostics and drug discovery.
    Type: Grant
    Filed: August 5, 2002
    Date of Patent: September 26, 2006
    Assignee: Ciphergen Biosystems, Inc.
    Inventors: T. William Hutchens, Tai-Tung Yip
  • Patent number: 7097745
    Abstract: A method of forming a tunneling magnetoresistive head begins by forming a tunneling magnetoresistive stack having a tunnel barrier. An air bearing surface is formed of the tunneling magnetoresistive stack. The air bearing surface is ion etched causing a deficiency of a constituent in a portion of the tunnel barrier adjacent the air bearing surface. The deficiency of the constituent is replenished in the portion of the tunnel barrier adjacent the air bearing surface to restore the electrical properties of the tunnel barrier.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: August 29, 2006
    Assignee: Seagate Technology, LLC
    Inventors: Joel William Hoehn, Cyril Peter DeVries, Kristin Joy Duxstad, Harry Sam Edelman
  • Patent number: 7052585
    Abstract: A coated article is provided which includes a layer including titanium oxycarbide. In order to form the coated article, a layer of titanium oxide is deposited on a substrate by sputtering or the like. After sputtering of the layer including titanium oxide, an ion beam source(s) is used to implant at least carbon ions into the titanium oxide. When implanting, the carbon ions have sufficient ion energy so as to knock off oxygen (O) from TiOx molecules so as to enable a substantially continuous layer comprising titanium oxycarbide to form near a surface of the previously sputtered layer.
    Type: Grant
    Filed: March 11, 2003
    Date of Patent: May 30, 2006
    Assignee: Guardian Industries Corp.
    Inventors: Vijayen S. Veerasamy, Scott V. Thomsen, Rudolph Hugo Petrmichl
  • Patent number: 6962613
    Abstract: A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step, especially a cathode anneal of thin-film batteries. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists the growth of the crystalline structure of film. For lithium-ion energy-storage devices, the first material is an intercalation material, which releasably stores lithium ions therein. Supercapacitors and energy-conversion devices are also fabricated according the methods.
    Type: Grant
    Filed: March 23, 2001
    Date of Patent: November 8, 2005
    Assignee: Cymbet Corporation
    Inventor: Mark L. Jenson
  • Patent number: 6955578
    Abstract: A method of varying a transmittance of a transparent conductive film includes forming the transparent conductive film on a substrate and injecting a high energy source into the transparent conductive film to vary the transmittance of the transparent conductive film.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: October 18, 2005
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Sang-Il Park, Chang-Soo Kim
  • Patent number: 6919138
    Abstract: A mixture of TiO2 and Co is placed in a vacuum chamber under selected oxygen pressure and irradiated in the vacuum chamber with a selected laser light to cause TiO2 and Co to evaporate from the target and a layer of TiO2-Co to epitaxially grow on a heated single crystal substrate. The titanium dioxide-cobalt magnetic film for use in a photocatalyst, a semiconductor material having optical, electrical and magnetic functions, and a transparent magnet. The film is expressed by Ti1-xCoxO2 where 0<x?0.3, and wherein a Ti atom at its lattice position is replaced with a Co atom. The film has anatase or rutile crystalline structure, has its band gap energy varying in a range between 3.13 eV and 3.33 eV, retains its magnetization even at a temperature higher than a room temperature, and is transparent to visible light.
    Type: Grant
    Filed: August 17, 2001
    Date of Patent: July 19, 2005
    Assignee: Japan Science and Technology Corporation
    Inventors: Hideomi Koinuma, Yuji Matsumoto
  • Patent number: 6899928
    Abstract: The present invention is directed towards a process and apparatus for epitaxial deposition of a material, e.g., a layer of MgO, onto a substrate such as a flexible metal substrate, using dual ion beams for the ion beam assisted deposition whereby thick layers can be deposited without degradation of the desired properties by the material. The ability to deposit thicker layers without loss of properties provides a significantly broader deposition window for the process.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: May 31, 2005
    Assignee: The Regents of the University of California
    Inventors: James R. Groves, Paul N. Arendt, Robert H. Hammond