Inorganic Oxide Containing Plating Or Implanted Material Patents (Class 427/529)
  • Patent number: 5246741
    Abstract: A substrate to be modified is placed in a vacuum vessel, a reducing atmosphere is provided over the substrate and simultaneously therewith the substrate is irradiated with accelerated ions, whereby oxygen which bonds to the substrate is freed from the substrate, the oxygen bonds to a material which forms the reducing atmosphere and the surface of the substrate is modified by the accelerated ion. The surface of the substrate can be thus efficiently modifed at relatively low temperatures. Furthermore, by evaporating carbon for an alumina substrate or alumina powder or providing hydrocarbon gas over the alumina substrate or alumina powder in a vacuum vessel, the alumina substrate or alumina powder is providing in the reducing atmosphere and the alumina substrate or alumina powder is irradiated with accelerated nitrogen ions from an ion source, whereby aluminum and oxygen which constitute the alumina substrate or alumina powder are cut off from each other by irradiation with the accelerated nitrogen ions.
    Type: Grant
    Filed: December 20, 1990
    Date of Patent: September 21, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Koukichi Ouhata, Kenichi Natsui
  • Patent number: 5229360
    Abstract: A method for forming a superconducting circuit is disclosed, comprising the steps of forming a mask pattern on a superconducting layer, forming a covering layer, containing a modifying element for superconductor, on the resultant structure, diffusing the modifying element for a superconductor, which is contained in the covering layer, into the superconducting layer to modify a corresponding location to a nonsuperconducting layer. A method for forming a multi-layer superconducting circuit is also disclosed, comprising sequentially repeating the same steps as set forth above over a substrate.
    Type: Grant
    Filed: February 6, 1992
    Date of Patent: July 20, 1993
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Shoji Shiga, Koki Sato, Nakahiro Harada, Kiyoshi Yamamoto
  • Patent number: 5227364
    Abstract: A method of forming a fine groove on a superconducting thin film. A superconducting oxide thin film is formed on a MgO substrate, and a damaged layer is formed thereon by irradiating the superconducting thin film with focused ion beams to such a degree that not sputter is generated and the crystalline structure of the superconducting thin film is disturbed. The damaged layer is then removed by treatment with a strong alkali such as KOH. Thus, a fine groove is effectively formed. By inserting an oxide layer between the substrate and the superconducting thin film, a Josephson junction device suitable for superconducting transistors is produced.
    Type: Grant
    Filed: June 27, 1991
    Date of Patent: July 13, 1993
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Shuji Fujiwara, Ryokan Yuasa, Masao Nakao, Masaaki Nemoto
  • Patent number: 5225396
    Abstract: A method for forming an oxide superconducting film is disclosed. A substrate member comprising an oxygen ion conductor and a material provided thereon having oxygen permeability and good fitting of lattice constant to the oxide superconducting film is prepared, and then an oxide superconducting film is formed on the substrate member. During the formation of the superconducting film, electric current is made to flow through the substrate member, whereby oxygen is supplied to the superconducting film.
    Type: Grant
    Filed: July 24, 1991
    Date of Patent: July 6, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hisashi Ohtani
  • Patent number: 5206213
    Abstract: A process for the preparation of oriented, ceramic oxides from a bilayer structure of a polycrystalline superconducting ceramic oxide and a second ceramic oxide material having a lower melting point than the superconducting ceramic oxide. The process comprises the steps of preparing a substrate, depositing the superconducting ceramic oxide and second ceramic oxide in alternate layers, and heat treating the resulting composite structure to obtain an oriented structure whereby the c-axes of the unit cells of the crystallites are predominantly normal to the surface of the substrate.
    Type: Grant
    Filed: March 23, 1990
    Date of Patent: April 27, 1993
    Assignee: International Business Machines Corp.
    Inventors: Jerome J. Cuomo, Charles R. Guarnieri, Eugene S. Machlin, Ronnen A. Roy, Dennis S. Yee
  • Patent number: 5192410
    Abstract: A metal plate is given an excellent decorative color by a multi-ceramic coating of a colored ceramic layer formed over the metal plate, the colored ceramic layer being made of at least one selected from the group consisting of nitrides and carbides of titanium, zirconium, hafnium, chromium, niobium, and aluminum and having a thickness of 0.1 .mu.m to 1 .mu.m; and a transparent ceramic layer formed over the colored ceramic layer, the transparent ceramic layer being made of at least one of the group consisting of silicon oxide, silicon nitride, and aluminum oxide and having a thickness of 0.1 .mu.m to 5 .mu.m. The depositions of the colored and transparent ceramic layers are effected by a dry process, and the order of deposition of the colored and transparent ceramic layers can be reversed.
    Type: Grant
    Filed: October 4, 1991
    Date of Patent: March 9, 1993
    Assignee: Nippon Steel Corporation
    Inventors: Wataru Ito, Shumpei Miyajima, Misao Hashimoto, Isao Itoh, Tadashi Komori
  • Patent number: 5158931
    Abstract: A laser beam 5 is directed to a target made of an oxide superconductor to allow a target spot which is irradiated with the beam to be evaporated and a matter which is evaporated to be deposited as a thin film on the surface of a substrate 3 at which time excited oxygen is supplied to or near a thin film deposition site on the substrate 3. In this way, an oxide superconductor thin film is formed on the substrate with oxygen atoms incorporated in the crystal structure of the thin film.
    Type: Grant
    Filed: November 16, 1989
    Date of Patent: October 27, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Etsuo Noda, Setsuo Suzuki, Osami Morimiya, Kazuo Hayashi