Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition processes are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.

Abstract: The present invention provides methods and apparatus for plasma treatment of tubing surfaces. In one aspect, the invention provides a method for treating a tubing surface which calls for generating a gaseous plasma within a spatially localized region of space by electron cyclotron resonance (ECR), and exposing the surface to this plasma for a selected time period to treat the surface. Subsequent to the plasma treatment, the treated surface can be optionally coated with a selected compound, such as a bioactive material, e.g., anti-biotic or anti-coagulants.

Abstract: A method for manufacturing an optical filter capable of manufacturing an optical filter in such a manner that the transmission wavelength varies linearly with respect to the angle &thgr; in the rotation direction of the substrate and that almost the entire range of the angle &thgr; is utilizable as the optical filter. A mask capable of being rotated relatively with respect to the substrate coaxially on a plane parallel to the substrate, which is either having an aperture extending along a radius direction with an aperture angle &phgr; or itself extending along a radius direction to cover an angle &phgr;, is provided over the substrate. Then, the mask is relatively rotated with respect to the substrate at least once at a non-constant angular speed during a formation of a single layer or multiple layers on the substrate, while depositing a dielectric material in a single layer or multiple layers on the substrate from the mask side within a deposition chamber.

Abstract: This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container 2 including a stage 4 for an object to be processed 10; and applying a bias electric power to the stage 4 in order to draw ions in the plasma toward the object 10 while forming an insulation film consisting of a film of fluorine-added carbon onto the object 10 by the plasma. At first, a first electric power of the bias electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a first flow rate to form the film of fluorine-added carbon onto the object 10. Then, a second electric power of the bias electric power smaller than the first electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a second flow rate smaller than the first flow rate to form the film of fluorine-added carbon onto the object 10.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: A process for forming a coating on a substrate by condensation of a coating material onto the substrate while the substrate is moving through an enclosure under vacuum in which evaporation of the coating material takes place. With the inventive process, deposits with controlled structure and adhesion can be made on moving substrate or support even at very high speeds, so that the process can advantageously be carried out continuously or at variable speed.

Abstract: The present invention generally provides a method and apparatus for forming a doped layer on a substrate to improve uniformity of subsequent deposition thereover. Preferably, the layer is deposited by a sputtering process, such as physical vapor deposition (PVD) or Ionized Metal Plasma (IMP) PVD, using a doped target of conductive material. Preferably, the conductive material, such as copper, is alloyed with a dopant, such as phosphorus, boron, indium, tin, beryllium, or combinations thereof, to improve deposition uniformity of the doped layer over the substrate surface and to reduce oxidation of the conductive material. It is believed that the addition of a dopant, such as phosphorus, stabilizes the conductive material surface, such as a copper surface, and lessens the surface diffusivity of the conductive material.

Abstract: A plasma processing apparatus and method is equipped with a reaction chamber, a microwave generator for generating a microwave within the reaction chamber, and main and auxiliary magnets for producing a magnetic filed parallel with microwave propagation direction. The auxiliary magnet is located along the wall of the reaction chamber so as to strengthen the magnetic filed at the periphery of the reaction chamber. A reactive gas containing a carbon compound gas is introduced into the chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field. The presence of the auxiliary magnet produces a centrifugal drifting force within the reaction chamber, thereby confining the plasma gas to the center of the chamber. A substrate is then placed within the chamber and a film comprising amorphous carbon is deposited thereon.

Abstract: A method of producing a plasma by capacitive discharges between an active electrode and a passive electrode within a sealed chamber at controlled pressure, the passive electrode being placed at a given electric potential while the active electrode is fed with a discharge-maintaining voltage. The active electrode and passive electrode define a separation plane therebetween parallel to the electrodes. According to the method, a multipole magnetic barrier is placed between the electrodes within the sealed chamber, the multipole magnetic barrier producing magnetic field lines extending across the separation plane. Fast electrons accelerated by the active electrode are caused to oscillate between magnetic poles in order to create plasma production and diffusion zones that are situated on either side of a magnetic barrier facing each of the electrodes.

Abstract: The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a plasma chamber having control electrodes and reference electrodes. The control electrodes are biased with a negative potential. The plasma assumes a potential more positive than the control electrodes. The reference electrodes are then biased to be more positive than the plasma. Hence, negative ions or negatively-charged particulates in the plasma are attracted to the more positive reference electrodes, and thus escape the plasma without being trapped therein, and are not available to serve as nucleation or agglomeration points for contaminants. A pair of Helmholtz coils produce a magnetic field having magnetic field lines that run longitudinally between the control electrodes.

Abstract: The described device is introduced into a plastic container with a narrow opening and serves a plasma enhanced process for treating the inside surface of the container. The device (2) extends between the container opening and the container bottom along the container axis (X) and comprising a gas feed tube (23) for feeding a process gas into the container and permanent magnets (24) for establishing a stationary magnetic field inside the container. The magnets (24) form a column of superimposed magnets which is arranged inside the gas feed tube (23). The north and south poles of each magnet are positioned on opposite sides of the container axis (X). The device may also comprise cooling means (25) for cooling the gas feed tube and the magnets.

Abstract: A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.

Abstract: A substrate processing system includes a processing chamber, an electrically floating substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, at least one ion source located in the chamber, and a power source for energizing the ion source by positively biasing the anode and negatively biasing the cathode in a train of pulses of selectably variable duty cycle and magnitude to maintain a selected time averaged current, the bias in each instance being relative to the chamber. The ion source ionizes the process gas producing ions for processing a substrate disposed on the floating substrate holder in the chamber. The floating substrate is biased in accord with the net charge thereon as controlled by the energetic electron flux. One embodiment includes two such ion sources.

Abstract: The present invention provides a process for synthesizing one-dimensional nanosubstances. A membrane having channels serves as the host material for the synthesis. The anodic membrance is brought into contact with a microwave excited plasma of a precursor gas using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system. Parallel aligned nanosubstances can be synthesized in the channels of the membrane over a large area. Carbon nitride nanosubstances are synthesized successfully for the first time in the present invention.

Abstract: The present invention relates to a process for electron cyclotron resonance plasma deposition of electron-emitting carbon films, in which by injecting a microwave power into a plasma chamber incorporating an electron cyclotron resonance zone (9), ionization takes place of a gaseous mixture under a low pressure, the thus created ions and electrons diffusing along the magnetic field lines (6) to a substrate (3), the gaseous mixture comprising organic molecules and hydrogen molecules. Said process comprises the following stages: heating the substrate (3), creating a plasma from the ionized gaseous mixture, creating a potential difference between the plasma and the substrate, diffusion of the plasma up to the substrate (3) which, by heating, has reached a temperature such that said electron-emitting material is deposited on the substrate.

Abstract: A process for reducing intrinsic stress and/or hydrogen content of a SiOx film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

Abstract: A film formation method which comprises the steps of forming a high melting metal film on a substrate to cover an insulating pattern formed on the substrate therewith, and forming on the surface of the high melting metal film a high melting metal nitride film or a high melting oxide nitride film. The high melting metal film in the first step is formed by a chemical vapor deposition process, after which the high melting metal nitride or high melting metal oxide nitride film is continuously formed by the chemical vapor deposition process. During the CVD processes in the first and second steps, the substrate may be applied with an RF bias.

Abstract: To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.

Abstract: Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating means for generating said microwaves, microwave transmitting means for transmitting the microwaves, a process chamber having said semiconductor wafer arranged therein, the microwaves being introduced into said process chamber through said microwave transmitting means, process gas supply means for supplying a process gas into said process chamber, and magnetic field generating means for generating a magnetic field within the process chamber. The frequency of the microwave falls within a range between a lower limit of a cutoff frequency determined by the inner diameter of the process chamber and an upper limit of a maximum frequency at which a standing wave of the microwave does not occur on the surface of the object.

Abstract: A method for producing flat panels for TFT or plasma display applications includes forming a sputter source within a sputter coating chamber, the source having at least two electrically mutually isolated stationery bar-shaped target arrangements. A controlled magnet arrangement provided under each target with a time-varying magnetron field.

Abstract: A method for achieving a highly uniform plasma density on a substrate by shaping an induced electric field including the steps of positioning the substrate in a processing chamber. supplying a high frequency power to a spiral antenna generating an induced electric field in the processing chamber, generating a plasma in the processing chamber, and shaping the electric field with respect to the substrate to achieve a uniform distribution of plasma on the substrate being processed.

Abstract: A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate are immersed in a CuSO4—H2O solution. A positive dc voltage is applied to the copper plate; the dc current ionizes the CuSO4 solution and forms Cu2+ ions. These Cu2+ ions will diffuse to the wafer surface. Most of the Cu2+ ions will accumulate in and around defective contacts or vias in the semiconductor surface making these defective contacts or vias readily identifiable.

Abstract: Methods and apparatus are provided for uniformly depositing a coating material from a vaporization source onto a powdered substrate material to form a thin coalescence film of the coating material that smoothly replicates the surface microstructure of the substrate material. The coating material is uniformly deposited on the substrate material to form optical interference pigment particles. The thin film enhances the hiding power and color gamut of the substrate material. Physical vapor deposition processes are used for depositing the film on the substrate material. The apparatus and systems employed in forming the coated particles utilize vibrating bed coaters, vibrating conveyor coaters, or coating towers. These allow the powdered substrate material to be uniformly exposed to the coating material vapor during the coating process.

Abstract: A method and apparatus for generating a plasma by inductively coupling electromagnetic energy into the plasma. In one embodiment, first and second antenna coils are disposed about the circumference of the plasma containment area. The first and second antenna coils are relatively spaced along the longitudinal axis of the plasma containment area. A current is generated in the first and second antenna coils. A phase shift regulating network establishes a difference between the phase of the current in the first antenna and the phase of the current in the second antenna. The phase difference corresponds to the phase difference required to launch a helicon wave in the plasma. In a second embodiment, a chamber shield is made of a conductive material and is coupled to the RF source such that the shield functions as an RF antenna. The shield may be coupled in series to a coil surrounding the shield to increase the resultant flux density.

Abstract: A display as for images and/or information comprises a plurality of light-emitting fibers disposed in side-by-side arrangement to define a viewing surface. Each light-emitting fiber includes a plurality of light-emitting elements disposed along its length, each having two electrodes between which are applied electrical signals to cause the light-emitting element to emit light to display a pixel or sub-pixel of the image and/or information. The light-emitting fiber includes an electrical conductor disposed along its length to serve as a first electrode, a layer of light-emissive material disposed thereon, and a plurality of electrical contacts disposed on the light-emissive material to serve as the second electrodes of the light-emitting elements, and are formed in a continuous process wherein a transparent fiber passes through a plurality of processing chambers for receiving the electrical conductor, the light-emissive layer and the plurality of electrical contacts thereon.

Abstract: Disclosed is a magnetic film forming method of forming a magnetic film on a substrate by preparing a material A formed of oxide of an element T of at least one kind of Fe, Co, and Ni and a material B formed of oxide of an element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and making a target by sintering the powders of the material A and the material B or preparing the material A formed of oxide of the element T of at least one kind of Fe, Co, and Ni, the material B formed of oxide of the element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and a material C formed of an element S of at least one kind of Fe, Co, and Ni and making a target by sintering the powders of the material A, the material B and the material C; disposing the target in a film forming apparatus so that the target confronts a substrate; and forming the magnetic film on the substrate.

Abstract: A dielectric layer is deposited on a workpiece by a chemical vapor deposition method in an electron cyclotron resonance vacuum plasma processor having a plasma chamber responsive to a repetitively pulsed microwave field and gases from a plasma source. A reaction chamber responds to at least one reacting gas containing at least one element that chemically reacts in the presence of the plasma with at least one element in at least one of the gases from the plasma source to form the deposited layer on the workpiece. The turn off periods are long enough to cause electrons in the plasma on the deposited dielectric layer to be cooled sufficiently (from about 3.5 eV to a lower value having a minimum value of about 0.1 eV) to reduce the tendencies for opposite polarity charges to be established across the deposited dielectric layer and for damaging discharge current to flow across the deposited dielectric layer.

Abstract: The invention concerns a plasma CVD system (in particular a plasma pulse CVD system) with an array of microwave antennas. According to the invention, in order to improve the homogeneity of the layer, interference is prevented by controlling adjacent antennas in a chronologically offset manner. To that end, microcapsules are provided within the macrocapsules of the plasma pulse CVD process. Additionally, the uniformity of the layer deposition at the interfaces between adjacent modules can be optimized by radio-frequency excitation by means of suitable electrodes, magnetic fields or the configuration of the gas inlets. The surface coated in an operating cycle can thus be scaled as required.

Abstract: Process for the depositing, onto a substrate, of a coating essentially constituted of an electronic conductor compound, in which the said coating is formed by producing alternatively, on the one hand, in at least one depositing zone, one or several deposits of a determined thickness of an electronic conductor element on the substrate, and, on the other hand, in at least one reaction zone, one or several reactions of the element thus deposited with ions of a reactive gas which are implanted into the deposit of the above-mentioned element over approximately this entire thickness determined in a way as to form, preferably with the totality of this element, the said compound, the above-mentioned ions being submitted to a kinetic energy below 2000 V, while the aforesaid thickness of the deposit of the element is determined as a function of the kinetic energy applied in such a way as to allow the implantation of these ions over approximately this entire thickness.

Abstract: In an ECR plasma generator, radio frequency ranging from 3 to 300 MHz is applied from a radio frequency power supply to an electrode which is provided in a chamber having an exhaust system and which serves as a shower head for gas introduction, and power is supplied to a coil provided at the outer periphery of the chamber, so as to form a magnetic field an integer number of times as large as a resonant magnetic field corresponding to the applied radio frequency, parallel with the direction of an electric field and to generate ECR plasma in an atmosphere of the supplied process gas.

Abstract: In a phase-change recording medium, a recording medium is provided with a barrier layer including Ge--N, Ge--N--O between a recording layer and a dielectric protective layer in order to prevent a chemical reaction and an atom diffusion between the recording layer and the dielectric protective layer. A barrier material can be also applied to the protective layer itself. Thereby, it is possible to considerably suppress a reduction of a reflectivity and a reduction of a signal amplitude due to the repeat of recording and erasing, such reductions being observed in a conventional phase-change optical information recording medium, and thereby the number of overwriting times can be increased.

Abstract: A substrate for a liquid jet recording head is provided at least with a supporting member, an exothermic resistive element arranged on the supporting member for generating thermal energy to be utilized for discharging recording liquid, and pairs of wiring electrodes connected to the exothermic resistive element at given intervals. Such a substrate comprises a layer formed with a film produced by the application of a bias ECR plasma CVD method. With the layer thus formed, a desirable configuration of the wiring stepping portions as well as a desirable film quality can be obtained so as to make the surface of the substrate smooth thereby to implement a liquid jet recording head having an excellent durability at a low manufacturing cost when such a substrate is used for the fabrication of the liquid jet recording head.

Abstract: The invention describes composite coatings, in particular comprising carbon and another metallic element such as silicon or aluminium. These coatings have improved properties compared with pure tetrahedral amorphous carbon coatings, in that they have reduced stress levels and can be deposited at higher thicknesses, whilst retaining acceptable hardness and other useful mechanical properties. Also described are methods of making composite coatings, materials for making the coatings and substrates coated therewith. Specifically, a method of applying a coating to a substrate using a cathode arc source, comprises generating an arc between a cathode target and an anode of the source and depositing positive target ions on the substrate to form the coating, wherein the coating is a composite of at least first and second elements and the target comprises said at least first and second elements.

Abstract: A deposition method is adapted to deposit a zinc oxide film that has a high light transmittance, an adequate specific electric resistance and a large thickness at a high deposition rate and at low cost in a process that may last long but is stable. The method for depositing a zinc oxide film on a substrate held in an inert gas atmosphere is conducted by magnetron sputtering so that the maximum magnetic flux density in a direction parallel to the surface of the zinc oxide target is held to be not higher than 350 gauss.

Abstract: An ion flow forming method and apparatus for attracting ions from a plasma generated in a plasma generation chamber and forming a flow of the ions are disclosed. This ion flow forming apparatus includes the plasma generation chamber having a plasma diffusion outlet port, a processing chamber accommodating a target object, for example, two electrodes arranged between the plasma generation chamber and the target object in the processing chamber, and a potential control unit. This potential control unit controls voltages to be applied to the plasma generation chamber, the two electrodes, and the processing chamber, so that the step of diffusing the plasma generated in the plasma generation chamber in a space between the two electrodes, the ion attraction step of repelling electrons in the diffused plasma toward the plasma generation chamber and attracting the ions in the plasma in an opposite direction, and the ion flow formation step of directing the ions toward the target object are sequentially performed.

Abstract: A thermal plasma annealing system comprises a radiation irradiation means for irradiating a thin film formed on a substrate with heat or radiation emitted from a thermal plasma. This annealing system enables a material relatively sensitive to high heat such as glass to be used as a substrate, and can lend itself to a large amount of annealing treatments on a mass-production scale, yielding consistent annealing quality.

Abstract: An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.

Abstract: The present invention relates to a method and structure for controlling plasma uniformity in plasma processing applications. Electron thermal conductivity parallel and perpendicular to magnetic field lines differs by orders of magnitude for low magnetic fields (on the order of 10 gauss). This property allows the directing of heat flux by controlling the magnetic field configuration independent of ions since the effect of modest magnetic fields upon the transport of ions themselves is minimal. Heat is preferentially conducted along magnetic field lines with electron temperatures on the order of 0.1 to 1 eV/cm being sufficient to drive kilowatt-level heat fluxes across areas typical of plasma processing source dimensions.

Abstract: A method for forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field is described, characterized by that the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave of an electromagnetic wave having the same or different wavelength as that of the pulsed wave. The process enables deposition of a uniform film having an excellent adhesion to the substrate, at a reduced power consumption.

Abstract: A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 .ANG. per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively.

Abstract: The present invention provides an apparatus and method for processing a workpiece in an inductively coupled plasma reactor. Inductive power is applied to the reactor to generate a plasma. A magnetic field is generated within the plasma reactor having lines of force oriented perpendicular to the workpiece surface. It is a feature of the invention to control the electron temperature near the surface of the workpiece by controlling the applied magnetic field. It is a further feature to increase average ion density near the workpiece without otherwise causing damage to the workpiece due to uneven charge build-up. The applied magnetic field can be time invariant or time variant. In both cases, processing can be optimized by adjusting the magnitude of the magnetic field to a level just below where damage due to uneven charge build-up occurs. With the time variant field, the average ion density can be adjusted with respect to average electron temperature.

Abstract: In a process for forming a plasma CVD fluorine-doped SiO.sub.2 dielectric film, a feed gas to be supplied to a plasma CVD apparatus is composed to include not only SiH.sub.4 gas, O.sub.2 gas, CF.sub.4 gas and Ar gas but also CO.sub.2 gas, and the amount of carbon and the amount of fluorine included in the feed gas are controlled independently of each other, to form a plasma CVD silicon-based SiO.sub.2 dielectric film doped with fluorine in the concentration range of 4.0.times.10.sup.21 atoms/cc to 1.0.times.10.sup.22 atoms/cc, and carbon in the concentration range of 3.0.times.10.sup.19 atoms/cc to 1.0.times.10.sup.21 atoms/cc. Thus, a plasma CVD silicon-based SiO.sub.2 dielectric film having a low dielectric constant and a sufficient "resistance to moisture" is obtained.

Abstract: A substrate to be coated with a thin film is placed inside a vacuum chamber, an ECR plasma is generated and introduced into the vacuum chamber by means of a specified magnetic field generated inside the vacuum chamber and a reaction gas, as well as an inert gas, is introduced into the vacuum chamber while a negative DC voltage superposed with a high-frequency pulse with frequency 25-250 kHz is applied to the substrate by a voltage applying device such that the voltage of the substrate reaches a positive value instantaneously. The frequency of the superposed pulse is selected by using an ammeter to determine an optimum frequency for minimizing the load current of the voltage-applying circuit.

Abstract: A plasma CVD process for a metal film made from Ti or the like and a formation process of a metal nitride film made from TiN or the like. Each process solves problems on asymmetry of a film shape at an opening portion of a contact hole, corrosion of an underlaying material layer, remaining halogen in the film, and peeling of the film. In the plasma CVD using a mixed gas containing TiCl.sub.4, H.sub.2 and Ar, species for forming a Ti film is efficiently ionized and the Ti ions thus generated are made incident on a substrate to be processed in the direction substantially perpendicular to the substrate, to thus form a metal film being good in coverage. A metal nitride film having a specific thickness is formed by repeating the step of forming such a metal film and the step of nitriding the metal film by plasma nitriding.

Abstract: In a magnetic film forming method, a plurality of chips formed of Fe.sub.3 O.sub.4 and a plurality of chips formed of HfO.sub.2 are disposed on a target formed of Fe. The composition ratio of a Fe--Hf--O film can be set within a proper range by adjusting the numbers of the up said two kind of chips.

Abstract: A method of depositing a polymer film onto a semiconductor wafer is provided which includes the steps of connecting the wafer to one terminal of a voltage source, connecting an electrode to an other pole of the voltage source and placing the electrode and substrate in superposed orientation to form a parallel plate capacitor, wherein an electric field is produced between the electrode and substrate. The parallel plate capacitor is placed in a chamber where pressure andc temperature are maintained at predetermined levels and gaseous monomers of the desired film to be polymerized are introduced into the chamber. The gaseous monomers are then permitted to flow between the electrode and wafer while the voltage of the electric field is maintained at a level sufficient to polarize the monomers without breaking their chemical bonds wherein the polarized monomers react to form a polymer film on the wafer at an enhanced rate.

Abstract: An apparatus for forming thin films such as protective layers on both surfaces of a substrate of a magnetic memory device has an evacuable reaction chamber sandwiched between two electron cyclotron resonance plasma generators disposed on mutually opposite sides. Each plasma generator includes a wave guide for introducing microwave energy and a magnetic coil for providing a magnetic field for generating a plasma and causing the generated plasma to move to the substrate set inside the reaction chamber with a negative bias voltage applied thereto.

Abstract: A device, and a method for using the device, for altering the surface of a substrate with a plasma includes a vessel having a chamber, a magnet and a plasma generator. Both the generator and the magnet are positioned outside the vessel while the substrate to be altered is placed in the chamber. The magnetic field is established substantially parallel to the substrate surface that is to be altered to insulate the plasma from the substrate surface. Also, a radio frequency wave is propagated from the generator into the chamber to generate the plasma in chamber which alters the surface. Specifically, the plasma is generated in ionization zones located between the substrate surface and the vessel walls. A region in the chamber is thus defined between the ionization zones where the plasma is established with substantially uniform density. Additionally, electrodes can be placed to voltage bias directly or capacitively the plasma for ion etching or deposition on the substrate surface.

Abstract: A microwave plasma processing apparatus comprises a plasma generation chamber, a processing chamber communicating with the plasma generation chamber, supporting of a substrate to be processed arranged in the processing chamber, a circular waveguide with slots arranged around the plasma generation chamber, and a magnetic field generation unit for generating a cusp magnetic field in the plasma generation chamber. A microwave plasma processing method using this apparatus is provided, to maintain a high-density and large-area uniform plasma, even at a low temperature, and even in a low-pressure region having a pressure of 1 mTorr.