Abstract: A plasma film forming apparatus includes: a processing chamber; a mounting table for mounting thereon a target object; a ceiling plate which is installed at a ceiling portion and is made of a dielectric material; a gas introduction mechanism for introducing a processing gas including a film formation source gas and a supporting gas; and a microwave introduction mechanism which is installed at a ceiling plate's side and has a planar antenna member. The gas introduction mechanism includes: a central gas injection hole for the source gas, located above a central portion of the target object; and a plurality of peripheral gas injection holes for the source gas, arranged above a peripheral portion of the target object along a circumferential direction thereof. A plasma shielding member is installed above the target object and between the central gas injection hole and the peripheral gas injection holes along the circumferential direction thereof.

Abstract: A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range ?30 to ?105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.

Abstract: A method for forming a graphitic tin-carbon composite at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one organo tin precursor material in the reactor cell forms a tin-carbon film on a supporting substrate disposed in the cell under influence of the plasma. The three dimensional carbon matrix material with embedded tin nanoparticles can be used as an electrode in lithium-ion batteries.

Abstract: A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse.

Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

Abstract: Electrochemical cells or batteries featuring functional gradations, and having desirable, periodic configurations, and methods for making the same. One or more methods, in alone or in combination, are utilized to fabricate components of such electrochemical cells or batteries, which are designed to achieve certain thermal, mechanical, kinetic and spatial characteristics, and their effects, singly and in all possible combinations, on battery performance. The thermal characteristics relate to temperature distribution during charge and discharge processes. The kinetic characteristics relate to rate performance of the cells or batteries such as the ionic diffusion process and electron conduction. The mechanical characteristics relate to lifetime and efficiency of the cells or batteries such as the strength and moduli of the component materials. Finally, the spatial characteristics relate to the energy and power densities, stress and temperature mitigation mechanisms, and diffusion and conduction enhancements.

Abstract: An object of the invention is to provide a resin material having further improved thermal conductivity, slidability, heat resistance, strength and rigidity of a resin material and having imparted thereto characteristics such as high thermal conductivity, rigidity, scratch prevention, high slidability and the like, and a method for producing the same. A laminate is obtained by laminating the resin material and a carbon film having a thermal conductivity of from 70 to 700 W/mK, a resistance value of 1×107 ?cm or more (100° C.) and a film thickness of from 50 nm to 10 ?m, the carbon film having a spectrum peak at a Brag's angle (2?±0.3°) of from 41 to 42° in an X-ray diffraction spectrum by CuK?1 ray, or the laminate has a plasma-resistant film integrally molded on the resin material according to need.

Abstract: Methods and apparatus for plasma-assisted heat treatments are provided. The method can include initiating a heat treating plasma within a cavity (14) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (70), heating the object by exposing the object to the plasma, and maintaining exposure of the object to the plasma for a sufficient period to alter at least one material property of the object.

Abstract: A microwave plasma processing apparatus performs plasma processing on a substrate by exciting a gas by electric field energy of microwaves emitted from a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; an inner conductor of a coaxial waveguide connected to the coaxial converter to be slidable; a first contact member joined with the coaxial converter and electrically connecting the coaxial converter and the inner conductor; and a first spring member absorbing displacement, due to thermal expansion, of the RLSA and a member disposed above the RLSA.

Abstract: Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate 106 is disposed in a processing chamber 102 of a plasma processing apparatus and is provided with a plurality of gas discharge holes 113a for discharging a plasma excitation gas to generate plasma in the processing chamber 102, wherein an aspect ratio of a length of the gas discharge hole to a hole diameter thereof (length/hole diameter) is equal to or greater than about 20. The gas discharge holes 113a are made of ceramics members 113 which are separated from the shower plate 106, and the ceramics members 113 are installed in vertical holes 105 opened in the shower plate 106.

Abstract: The present invention relates to a method for treating plastic bottles comprising an operation for cold plasma sterilization with non-germicidal gasses and/or an operation for the cold plasma deposition of a diffusion barrier layer, said method being characterized in that said cold plasma delivers adjustable nonthermal energy to the entire inside surface of the bottle, said cold plasma being generated either through a distributed propagation of microwaves having a maximum intensity in the vicinity of said surface or by a hollow cathode system adapted to the bottle and supplied with pulsed DC and/or RF voltage. The invention also relates to the devices for implementing the method.

Abstract: In one aspect, the invention relates to a method of producing high-quality diamond comprising the steps of providing a mixture comprising hydrogen, a carbon precursor, and oxygen; exposing the mixture to energy at a power sufficient to establish a plasma from the mixture; containing the plasma at a pressure sufficient to maintain the plasma; and depositing carbon-containing species from the plasma to produce diamond at a growth rate of at least about 10 ?m/hr; wherein the diamond comprises less than about 10 ppm nitrogen. The invention also relates to the apparatus, gas compositions, and plasma compositions used in connection with the methods of the invention as well as the products produced by the methods of the invention. This abstract is intended as a safety scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: To generate plasma inside a tube of a small opening diameter and perform plasma processing inside the tube. A plasma processing device 2 is formed by a chamber (4) and a microwave generation device (6). A microwave is introduced into the chamber via a quartz tube (16). A tube holder (18) is arranged inside the quartz tube (16). Two holes are formed in the side surface of the tube holder (18). A tube (20) of a small opening diameter is fixed to the end of the tube holder (18).

Abstract: An electrochemical/electrically controllable device having variable optical and/or energetic properties, including a first carrier substrate including an electrically conductive layer associated with a first stack of electrically active layers and a second carrier substrate including an electrically conductive layer associated with a second stack of electrically active layers. The first and second stacks each function optically in series on at least a portion of their surface and are separated by an electrically insulating mechanism.

Abstract: A method of synthesizing and controlling the internal diameters, conical angles, and morphology of tubular carbon nano/micro structures. Different morphologies can be synthesized included but not limited to cones, straight tubes, nozzles, cone-on-tube (funnels), tube-on-cone, cone-tube-cone, n-staged structures, multijunctioned tubes, Y-junctions, dumbbell (pinched morphology) and capsules. The process is based on changing the wetting behavior of a low melting metals such as gallium, indium, and aluminum with carbon using a growth environment of different gas phase chemistries. The described carbon tubular morphologies can be synthesized using any kind of gas phase excitation such as, but not limited to, microwave excitation, hot filament excitation, thermal excitation and Radio Frequency (RF) excitations. The depositions area is only limited by the substrate area in the equipment used and not limited by the process.

Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.

Abstract: Disclosed are systems for achieving improved film properties by introducing additional processing parameters, such as a movable position for the microwave source and pulsing power to the microwave source, and extending the operational ranges and processing windows with the assistance of the microwave source. A coaxial microwave antenna is used for radiating microwaves to assist in physical vapor deposition (PVD) or chemical vapor deposition (CVD) systems. The system may use a coaxial microwave antenna inside a processing chamber, with the antenna being movable between a substrate and a plasma source, such as a sputtering target, a planar capacitively generated plasma source, or an inductively coupled source. In a special case when only a microwave plasma source is present, the position of the microwave antenna is movable relative to a substrate. The coaxial microwave antenna adjacent to the plasma source can assist the ionization more homogeneously and allow substantially uniform deposition over large areas.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: The invention includes the structure of a multilayer protective coating, which may have, among other properties, scratch resistance, UV absorption, and an effective refractive index matched to a polymer substrate such as polycarbonate. Each layer may contain multiple components consisting of organic and inorganic materials. The multilayer protective coating includes interleaved organic layers and inorganic layers. The organic layers may have 20% or more organic compounds such as SiOxCyHz. The inorganic layers may have 80% or more inorganic materials, such as SiO2, SiOxNy, and ZnO, or mixtures thereof. Each layer of the multilayer protective coating is a micro layer and may have a thickness of 5 angstroms or less in various embodiments. The multilayer protective coating may contain in the order of hundreds or thousands of micro layers, depending upon the design requirement of applications. In each micro layer, the components may have substantially continuous variations in concentration.

Abstract: [Problem] To provide a plasma processing apparatus and a method thereof, which is capable of generating plasma evenly on the lower surface of a dielectric. [Means for Solving] A plasma processing apparatus 1, in which microwave is propagated into a dielectric 32 provided on an upper surface of a processing chamber 4 via plural slots 70 formed on a lower surface of a waveguide 35 and a processing gas supplied in the processing chamber 4 is made into plasma using electric field energy of an electromagnetic field formed on the surface of the dielectric to perform plasma processing on a substrate G. The plasma processing apparatus 1, concave portions 80a to 80g having different depth are formed on a lower surface of dielectric 32. Further, the depths of the respective concave portions 80a to 80g are made different to control a plasma generation on the lower surface of the dielectric 32.

Abstract: A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.

Abstract: A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects.

Abstract: The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle ? equal to or less than 3×10?5 on supports whose diameter is equal to or higher than 100 mm. For this purpose, a SHF discharge is initiated in a gas mixture which is arranged in a reaction chamber and contains at least hydrogen and hydrocarbon. Afterwards, said gas mixture is activated by producing a stable nonequilibrium plasma with the aid of SHF radiation having a frequency f which is many times higher than a commonly used frequency of 2.45 GHz, for example 30 GHz.

Abstract: A method and a device for coating an inner surface of a hollow endless geometry, in particular of a pipe/tube includes introducing a gas mixture comprising at least one precursor into the endless geometry, in which the endless geometry is passed through at least one electrode unit, in which an alternating electric voltage is applied to the electrode unit, so that the gas mixture inside the endless geometry is at least partially transformed into a plasma state in the region of the electrode unit. A reaction product is produced in the gas mixture from the precursor by the plasma and the reaction product is deposited on the inner surface of the endless geometry.

Abstract: Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes to dielectric plates through slots, and performs plasma processing to the surface of the substrate by converting a gas supplied into a vacuum container into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes are arranged in parallel, a plurality of dielectric plates are arranged for each waveguide tube, and partitioning members formed of a conductor and grounded are arranged between the adjacent dielectric plates. The in-tube wavelength of the waveguide tube is adjusted to be an optimum value by vertically moving a plunger. Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma (615) for coating objects (250). In one embodiment, a method of coating a surface of an object (250) includes forming a plasma (615) in a cavity (230) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (240) and adding at least one coating material (510) to the plasma (615) by energizing the material (510) with, for example, a laser (500). The material (510) is allowed to deposit on the surface of the object (250) to form a coating. Various types of plasma (240) catalysts are also provided.

Abstract: A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects.

Abstract: The present invention relates to plasma cleaning methods for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The present invention also provides gas mixtures and activated gas mixtures which provide superior performance in removing deposits from a surface. The methods involve activating a gas mixture comprising a carbon or sulfur source, NF3, and optionally, an oxygen source to form an activated gas, and contacting the activated gas mixture with surface deposits to remove the surface deposits wherein the activated gas mixture acts to passivate the interior surfaces of the apparatus to reduce the rate of surface recombination of gas phase species.

Abstract: The present invention relates to an apparatus for carrying out a PCVD process in which one or more doped or undoped glass layers are coated onto the interior of a glass substrate tube. The apparatus comprises an applicator having an inner wall and an outer wall and a microwave guide that opens into the applicator. The applicator extends around a cylindrical axis and which is provided with a passage adjacent to the inner wall, through which the microwaves supplied via the microwave guide can exit, over which cylindrical axis the substrate tube can be positioned, while the applicator is fully surrounded by a furnace that extends over the cylindrical axis.

Abstract: A vapor deposition film formation method includes a step for arranging a surface wave generating device (10) using a microwave in a vacuum region, a step for continuously feeding a plastic film substrate (13) into the vacuum region so as to oppose to the surface wave generating device, a step of continuously supplying a reaction gas containing at least organic metal compound into the vacuum region, and a step for executing plasma reaction by the surface wave of the microwave from the surface wave generating device (10), thereby continuously forming a vapor deposition film on the surface of the film substrate (13). This method enables continuous formation of a vapor deposition film on the surface of a film substrate, especially a long film, by the surface wave plasma of the microwave.

Abstract: Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma of selected target species particles, such as atomic H or F, in a first chamber. The target species particles are directed toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target species particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec. *Discrimination against non-target species is provided by (i) use of a target species having a lifetime that is much greater than a lifetime of a non-target species and/or (2) use of an applied magnetic field to discriminate between charged particle trajectories for target species and for non-target species.

Abstract: In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H2 and O2.

Abstract: In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least some of the openings of the respective antennas overlap with at least some of the openings of another antenna, and form an effective plurality of microwave transmissive openings through the antenna assembly. Microwave energy is passed through the effective plurality of openings of the antenna assembly and to a flowing gas effective to form a surface microwave plasma onto a substrate received within the processing chamber. At least one of the antennas is moved relative to another of the antennas to change at least one of size and shape of the effective plurality of openings through the antenna assembly effective to modify microwave energy passed through the antenna assembly to the substrate.

Abstract: A system and method for depositing films on a substrate is described. One embodiment includes a vacuum chamber; a split conductor housed inside the vacuum chamber; a magnetron configured to generate a power signal that can be applied to at least a portion of the split conductor; a power supply configured to provide a power signal to the magnetron, the power signal including a plurality of pulses; and a pulse control connected to the power supply, the pulse control configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and the contour shape of the plurality of pulses.

Abstract: The present invention relates to an apparatus for carrying out plasma chemical vapour deposition, by which one or more layers of doped or undoped silica are deposited onto the interior of an elongated hollow glass substrate tube. The present invention further relates to a method of manufacturing an optical preform by means of plasma chemical vapour deposition, wherein doped or undoped glass-forming gases are passed through the interior of an elongated glass substrate tube while conditions for depositing glass layers are created in the interior of the substrate tube.

Abstract: A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Electromagnetic power is coupled to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate, electromagnetic power is coupled to a gas injection electrode to generate a plasma that ionizes contaminants such that the ionized contaminants are attracted to a plurality of orifices in the gas injection electrode. The process chamber is vacuum pumped through the plurality of orifices to expel the ionized contaminants from the process chamber.

Abstract: A CVD process for producing nanocrystalline films using a plasma (56, 312) created by an argon atmosphere (at least about 90 percent by volume) containing methane (preferably about at least about 1% by volume) and optionally hydrogen (preferably 0.001 to 2% by volume) is described. Strictly controlled gas purity and an apparatus which excludes oxygen and nitrogen from being introduced from outside of the chamber (40, 305) are used. The films are coated on various substrates to provide seals, optical applications such as on lenses and as a substrate material for surface acoustic wave (SAW) devices.

Abstract: A method for forming a graphitic carbon film at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one carbon precursor material in the reactor cell forms a graphitic carbon film on a substrate in the cell under influence of the plasma. This method can be used to coat active electrode material powders with highly conductive carbon, which can be especially useful in forming composite electrodes. When an organometallic is used as the precursor, this method can also be used to form carbon/metal catalyst films.

Abstract: A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave reflected by the plasma that is generated in the process chamber. Moreover, an incidence monitor (36) and a frequency monitor (48) monitor the frequency of the microwave generated by a magnetron (24). An electric power supplied to the magnetron (24) is controlled based on the monitored electric power of the reflected wave and the monitored frequency. This method thus controls plasma density to a constant level.

Abstract: A process for applying alternating layers by chemical vapor deposition comprises the process steps of depositing an adhesion-promoter layer on a substrate and applying a barrier layer. Alternating layers comprising organic and inorganic materials are deposited alternately, and in this process the coating time for application of the adhesion-promoter layer is between 0.05 s and 4.0 s and the coating time for application of the inorganic barrier layer is between 0.1 s and 6.0 s. A composite material is also produced using the process.

Abstract: Method for manufacturing a polymer article having a thin carbon coating formed on at least one of its sides by plasma enhanced chemical vapor deposition, this method including: a first step, corresponding to a time T1 when the treatment pressure is reached in the treatment area, the reactive fluid being injected in the treatment area; a second step, corresponding to a time T2 during which electromagnetic field is applied in the treatment area, characterized in that time T1 is around 1.5 second, time T2 being around 1.2 second, the reactive fluid being a carbon precursor in the gaseous state, its flow being of around 100 sccm.

Abstract: A process system and a deposition method for depositing a highly controlled layered film on a workpiece is disclosed. The basic component of the apparatus is a pulsing plasma source that is capable of either exciting or not-exciting a first precursor. The pulsing plasma source includes an energy source to generate a plasma, and a plasma adjusting system to cause the plasma to either excite or not-excite a precursor. The precursor could flow continuously (an aspect totally new to ALD), or intermittently (or pulsing, standard ALD operation process). The deposition method includes the steps of pulsing the plasma to excite/not-excite the precursors and the ambient to deposit and modify the deposited layers. This procedure then can be repeated until the film reaches the desired thickness.

Abstract: The present invention relates to a method for manufacturing an optical preform by carrying out one or more chemical vapor deposition reactions in a substrate tube. The method includes the steps of (i) supplying one or more doped or undoped glass-forming precursors to a substrate tube and (ii) effecting a reaction between these glass-forming precursors to form one or more glass layers on the interior of the substrate tube via the creation of a pulsed plasma zone in the interior of the substrate tube.

Abstract: A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element.

Abstract: A plasma surface treatment method for performing a surface treatment on a quartz member used under a plasma-exposed environment by using a plasma having an ion energy greater than about 5.3 eV. The plasma has, near a surface of the quartz member, an electron temperature higher than or equal to about 2 eV. Further, in a plasma processing apparatus for generating a plasma by introducing a microwave into a processing chamber through a planar antenna having a plurality of slots, the surface treatment is carried out for about 30-300 seconds by using a plasma of a processing gas containing Ar gas and N2 gas under conditions of a processing pressure lower than or equal to about 15 Pa and a microwave power higher than or equal to about 0.9 W/cm2, the surface treatment being repeated 25 to 2000 times.

Abstract: A coated aluminum component for a substrate processing chamber comprises an aluminum component having a surface; a first aluminum oxide layer formed on the surface of the aluminum component, the aluminum oxide layer having a surface comprising penetrating surface features; and a second aluminum oxide layer on the first aluminum oxide layer, the second aluminum oxide layer substantially completely filling the penetrating surface features of the first aluminum oxide layer. A method of forming the coated aluminum component is also described.

Abstract: Electron cyclotron resonance plasma deposition process and device for single-wall carbon nanotubes (SWNTs) on a catalyst-free substrate, by injection of microwave power into a deposition chamber comprising a magnetic confinement structure with a magnetic mirror, and at least one electron cyclotron resonance area inside or at the border of the deposition chamber and facing the substrate, whereby dissociation and/or ionization of a gas containing carbon is caused, at a pressure of less than 10?3 mbars, in the magnetic mirror at the center of the deposition chamber, producing species that will be deposited on said heated substrate. The substrate surface includes raised and/or lowered reliefs. The invention concerns the SWNTs thus obtained.

Abstract: Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma of selected target particles, such as atomic H or F, in a first chamber. The target particles are directed toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec.

Abstract: A frequency control circuit (45) controls an oscillation frequency of a second high frequency power source 51 based on a phase difference between a voltage component and a current component measured by a phase difference sensor (41) and an input impedance to an impedance matching device (34) measured by an impedance sensor (42). An amplitude control circuit (44) controls a level of a high frequency electricity output by the second high frequency power source (51) based on an electricity (effective electricity) which is measured by a power sensor (40) and is to be supplied to the impedance matching device (34).

Abstract: A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region.