Abstract: A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.

Abstract: A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor.

Abstract: Provided is a method of immobilizing an active material on a surface of a substrate. The method including cleaning a substrate, functionalizing a surface of the substrate using a hydroxyl group, functionalizing the surface of the substrate at atmospheric pressure using a vaporized organic silane compound, and immobilizing an active material to an end of the surface of the substrate. Therefore, since evacuation or the use of carrier gas is not necessary, a uniform, high-density, single-molecular, silane compound film can be formed inexpensively, simply, and reproducibly, and an active material can be immobilized to the single-molecular silane compound film.

Abstract: A plasma silanization system includes a processing vessel having a metal shelf and a non-metallic component support configured to elevate a component above the metal shelf to prevent excess silane deposition. A method of applying silane to a component in a plasma processing apparatus having a metal shelf includes placing a non-metallic component support on the metal shelf and placing a component on the non-metallic component support to prevent excess silane deposition.

Abstract: A method and process for forming a barrier layer on a flexible substrate are provided. A continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. Also provided is a coated flexible substrate comprising a barrier layer based on the structural unit SiC:H, or SiOC:H, or SiOCN:H. The barrier layer possesses high density and low porosity. The barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10?2-10?4 g·m?2d?1 and is appropriate for very low permeability applications.

Abstract: The present invention related to an improved structure of an optically transparent element that can be used in optical scanners, supermarket scanners, lenses for eyeglasses, etc. The application of oxynitride PECVD films provide good hardness and optical transparency. Such films displaying these physical properties are extremely useful as a scratch resistant coatings in lenses and systems in which an article contacts a transparent surface, such as in scanners and in environments in which intermittent, environmental contact occurs such as in displays for computers and suchlike and in liquid crystal displays, touch displays and compact disks.

Abstract: In order to improve the emptying of residual contents from containers, such as pharmaceutical packaging, the invention provides corresponding substrates with a hydrophobic coating. Provided for this purpose is a composite material which comprises a substrate and a coating deposited on it, which forms at least a part of the surface of the coated substrate, with the coating having a compound containing the elements C, O, and H, with further elements, apart from Si, C, H, having a content of less than 10 at %, preferably less than 5 at %, characterized in that this compound has a composition SiOxCyHz, in which x is at most 1.2.

Abstract: The present invention is related to a method for immobilising a biomolecule on a surface by generating and maintaining an atmospheric pressure plasma, the method comprising the steps of: introducing a sample in the space between two electrodes, a mixed atmosphere being present between the electrodes, applying an alternating voltage to the electrodes for generating and maintaining a plasma in the volumetric space between the electrodes, characterized in that the mixed atmosphere comprises an inert gas or nitrogen, an aerosol comprising a reactive precursor and an aerosol comprising a biomolecule, the reactive precursor and biomolecule being deposited and immobilized during the depositing step.

Abstract: A support that includes a flexible substrate and provided thereon, one or two or more polymer layers and one or two or more sealing layers, wherein at least one of the polymer layers and the sealing layers is formed by a process including exciting a reactive gas at a space between opposed electrodes at atmospheric pressure or approximately atmospheric pressure by electric discharge to be in the plasma state, and exposing the flexible substrate, the polymer layer or the sealing layer to the reactive gas in the plasma state.

Abstract: Described are processes for repairing plastic glazing and for the local application of a plasma coating using a plasma depositing device to an edge created by the removal of excess or unwanted plastic from plastic.

Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Abstract: A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by supplying a nitrogen gas onto the silicon oxide film; and nitride-processing the silicon oxide film by the plasma so as to modify an upper portion of the silicon oxide film into the silicon nitride film.

Abstract: A plasma buildup method for building up an optical fiber perform. The method includes the steps of: providing a plasma torch having an outlet nozzle adjacent to a primary perform, wherein an interaction zone is defined between the outlet nozzle and the primary preform; feeding the plasma torch with a plasma-generating gas in the presence of a silica-based material so as to deposit a buildup material on the primary preform; and introducing a reducing element into the interaction zone, the reducing element reacting to induce reduction of the nitrogen oxides produced by interaction between nitrogen and oxygen in the presence of the plasma generated by the torch.

Abstract: The invention relates to a method for plasma-assisted chemical vapour deposition for coating or material removal on the inner wall of a hollow body (42). The method involves introducing a gas lance (44) into the hollow body (42) and forming a cavity plasma (45) to form a plasma cloud arranged at the tip of the gas lance by applying an electric radio-frequency field to an RF electrode (41).

Abstract: A method and an apparatus are proposed for simultaneously coating the inner walls of a plurality of hollow containers, such as bottles, with fluid-impermeable barrier layers applied by a PECVD method with the use of transversal antennas capable of creating plasma having density increased in the vicinity of the inner walls of the containers. The barrier-layer application period is divided into a coating period and a noncoating cooling period, with RF energy constantly maintained under working conditions with shunting thereof from the coating station to the dummy loads during noncoating periods used for cooling the plastic containers. The apparatus comprises a vacuum chamber with a conveyor that transports the containers in a preoriented state for interaction with a plurality of aligning elements that can be inserted into the container openings for subsequent fixation at equal distances in positions aligned with the antennas that can be inserted into the containers for generation of the coating-applying plasma.

Abstract: A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

Abstract: A system to coat a substrate includes a deposition chamber maintained at sub-atmospheric pressure, one or more arrays containing two or more expanding thermal plasma sources associated with the deposition chamber, and at least one injector containing orifices for each array. The substrate is positioned in the deposition chamber and each expanding thermal plasma source produces a plasma jet with a central axis, while the injector injects vaporized reagents into the plasma to form a coating that is deposited on the substrate. The injector orifices are located within a specified distance from the expanding thermal plasma source to obtain generally a coating with generally uniform coating properties.

Abstract: A method for coating a fuel cell component is provided. The method includes the steps of providing a fuel cell component, and forming a coating on a surface of the fuel cell component with a plasma jet. The step of forming the coating may include applying a coating precursor to a surface of the fuel cell component and then reacting the coating precursor with the plasma jet to form the coating. The step of forming the coating may also include growing the coating on the surface of the fuel cell component by delivering the plasma jet containing the coating precursor.

Abstract: The photovoltaic structure comprises a thin film coating on a transparent substrate, the thin film comprising an effective amount of nanocrystalline silicon embedded in a matrix of amorphous and/or microcrystalline silicon. A transparent conducting oxide layer on a layer of non-conductive transparent oxide provides light-trapping capability as well as electrical conductivity where needed. A chemical vapor deposition (“CVD”) reactor provides improved gas distribution to the substrates being coated in the reactor. An improved sputtering process and an improved RF plasma-enhanced CVD manufacturing method both using high levels of hydrogen in the hydrogen-silane mixture and high electrical power levels for the plasma to increase the speed and to lower the cost of manufacturing.

Abstract: The photovoltaic structure comprises a thin film coating on a transparent substrate, the thin film comprising an effective amount of nanocrystalline silicon embedded in a matrix of amorphous and/or microcrystalline silicon. A transparent conducting oxide layer on a layer of non-conductive transparent oxide provides light-trapping capability as well as electrical conductivity where needed. A chemical vapor deposition (“CVD”) reactor provides improved gas distribution to the substrates being coated in the reactor. An improved sputtering process and an improved RF plasma-enhanced CVD manufacturing method both using high levels of hydrogen in the hydrogen-silane mixture and high electrical power levels for the plasma to increase the speed and to lower the cost of manufacturing.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: This invention relates to a plastic formed article having a vapor-deposited film on a surface of a plastic substrate by a plasma CVD method, the vapor-deposited film including an organosilicon vapor-deposited layer on the surface of the plastic substrate 1 and containing no oxygen, and a silicon oxide vapor-deposited layer on the organosilicon vapor-deposited layer. The plastic formed article not only features favorable gas-barrier property but also effectively prevents the generation of offensive odor at the time of vapor deposition and, further, offers excellent flavor-retaining property.

Abstract: In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency voltages of pulse waves having mutually inverted waveforms are applied to an upper electrode and a lower electrode, and the inversion interval of the pulse wave can be arbitrarily changed, the interior of the reaction chamber is dry cleaned.

Abstract: Provided are a metal line, a method of forming the same, and a display using the same. To increase resistance of a metal line having a multilayered structure of CuO/Cu and prevent blister formation, a plasma treatment is performed using a nitrogen-containing gas and a silicon-containing gas or using a hydrogen or argon as and the silicon-containing gas. Accordingly, a plasma treatment layer such as a SiNx or Si layer is thinly formed on the copper layer, thereby preventing an increase in resistance of the copper layer and also preventing blister formation caused by the damage of a copper oxide layer. Consequently, it is possible to improve the reliability of a copper line and thus enhance the reliability of a device.

Abstract: A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.

Abstract: The invention relates to a method for forming high sp3 content amorphous carbon coatings deposited by plasma enhanced chemical vapor deposition on internal surfaces and employing the “hollow-cathode” technique. This method allows adjustment of tribological properties, such as hardness, Young's modulus, wear resistance and coefficient of friction as well as optical properties, such as refractive index. In addition the resulting coatings are uniform and have high corrosion resistance. By controlling pressure, type of diamondoid precursor and bias voltage, the new method prevents the diamondoid precursor from fully breaking upon impact with the substrate. The diamondoid retains sp3 bonds which yields a high sp3 content film at higher pressure. This enables a faster deposition rate than would be possible without the use of a diamondoid precursor.

Abstract: Cyclical methods of depositing a silicon nitride film on a substrate are provided. In one embodiment, a method includes supplying a chlorosilane to a reactor in which a substrate is processed; supplying a purge gas to the reactor; and providing ammonia plasma to the reactor. The method allows a silicon nitride film to be formed at a low process temperature and a high deposition rate. The resulting silicon nitride film has a relatively few impurities and a relatively high quality. In addition, a silicon nitride film having good step coverage over features having high aspect ratios and a thin and uniform thickness can be formed.

Abstract: What is disclosed includes OD-doped synthetic silica glass capable of being used in optical elements for use in lithography below about 300 nm. OD-doped synthetic silica glass was found to have significantly lower polarization-induced birefringence value than non-OD-doped silica glass with comparable concentration of OH. Also disclosed are processes for making OD-doped synthetic silica glasses, optical member comprising such glasses, and lithographic systems comprising such optical member. The glass is particularly suitable for immersion lithographic systems due to the exceptionally low polarization-induced birefringence values at about 193 nm.

Abstract: Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate.

Abstract: Syringes for holding fluids susceptible to void formation when the syringe and fluid are frozen and thawed before use. The interior surface of the syringe barrel is modified by exposure to a plasma such that the incidence of void formation in the fluid is prevented or, at the least, significantly reduced in comparison with conventional syringes.

Abstract: A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

Abstract: A polysiloxane-based material presents a predetermined structure or conformation such that the polysiloxane-based material comprises a ratio between a number of linear —Si—O— bonds and a number of cyclic —Si—O— bonds less than or equal to 0.4, and preferably less than or equal to 0.3. Such a polysiloxane-based material enables a wetting hysteresis less than 10°, and preferably less than 5° to be obtained. Such a low wetting hysteresis material can be achieved by chemical vapor deposition enhanced by a plasma wherein a precursor is injected. The precursor is selected from the group consisting of cyclic organosiloxanes such as octamethylcyclotetrasiloxane and derivatives thereof and cyclic organosilazanes such as octamethylcyclosilazane and derivatives thereof. A ratio between a power density dissipated in the plasma and a precursor flow rate injected in the plasma is less than or equal to 100 W.cm?2/mol.min?1.

Abstract: A microfluidic device having a substrate with an array of curvilinear cavities. The substrate of the microfluidic device is preferably fabricated of a polymer such as polydimethylsiloxane (PDMS). The microfluidic device is manufactured using a gas expansion molding (GEM) technique.

Abstract: A “hybrid” photovoltaically active layer is homogenous (in a direction parallel to the major surfaces of the layer) with respect to film constituents, but is non-homogenous with respect to photovoltaic properties. First regions exhibit high absorptivity, while second regions that are perpendicular to the major surfaces of the layer exhibit a higher carrier mobility. The method for forming the layer includes one or all of chemical vapor deposition, the hollow cathode effect, and high power DC pulsing.

Abstract: This material suitable for constituting an electrolyte for a fuel cell has a hydrophobic matrix comprising carbon, fluorine, oxygen and hydrogen, and silicon.

Abstract: A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects.

Abstract: A barrier coating of organic-inorganic composition, the barrier coating having optical properties that are substantially uniform along an axis of light transmission, said axis oriented substantially perpendicular to the surface of the coating.

Abstract: Sub-atmospheric pressure chemical vapor deposition is described with a directed reactant flow and a substrate that moves relative to the flow. Thus, using this CVD configuration a relatively high deposition rate can be achieved while obtaining desired levels of coating uniformity. Deposition approaches are described to place one or more inorganic layers onto a release layer, such as a porous, particulate release layer. In some embodiments, the release layer is formed from a dispersion of submicron particles that are coated onto a substrate. The processes described can be effective for the formation of silicon films that can be separated with the use of a release layer into a silicon foil. The silicon foils can be used for the formation of a range of semiconductor based devices, such as display circuits or solar cells.

Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

Abstract: A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage.

Abstract: There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.

Abstract: A substrate processing system includes a deposition chamber and a plurality of tubular electrodes positioned within the deposition chamber defining plasma regions adjacent thereto.

Abstract: A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

Abstract: A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction chamber with a component of a gas generated by the sacrifice film, and bakes a second semiconductor substrate on which a predetermined film including the same component as that of the sacrifice film is formed in the preliminarily coated reaction chamber, while irradiating electron beams on the predetermined film to change quality of the predetermined film.

Abstract: A method for forming a coating on a substrate using an atmospheric pressure plasma discharge. The method comprises introducing an atomized liquid and/or solid coating-forming material into an atmospheric pressure plasma discharge and/or an ionized gas stream resulting therefrom, and exposing the substrate to the atomized coating-forming material. The application also described a method for polymerizing a polymer forming material, and further to apparatus for forming a coating on a substrate.

Abstract: The present invention relates to an apparatus and related method for manufacturing an optical preform. The present invention embraces a novel insert tube that is strategically positioned within a quartz substrate tube during the internal vapor deposition process.

Abstract: An electrode material of the present invention includes a plurality of particles capable of absorbing and desorbing lithium, and a plurality of nanowires capable of absorbing and desorbing lithium. The particles and the nanowires include silicon atoms. The plurality of nanowires are entangled with each other to form a network, and the network is in contact with at least two of the plurality of particles.

Abstract: A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Electromagnetic power is coupled to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate, electromagnetic power is coupled to a gas injection electrode to generate a plasma that ionizes contaminants such that the ionized contaminants are attracted to a plurality of orifices in the gas injection electrode. The process chamber is vacuum pumped through the plurality of orifices to expel the ionized contaminants from the process chamber.

Abstract: Processes are provided for preparing a substrate coated with a biomolecule, comprising: a) providing a substrate; b) coating the substrate with a polysiloxane, typically by exposing the substrate to a reactive gas containing siloxane functional groups and to plasma energy to yield a plasma-deposited polysiloxane surface on the substrate; c) rendering the polysiloxane surface amino functional; and d) contacting the amino-functional polysiloxane surface with a biomolecule under conditions effective to attach the biomolecule to the substrate. The coated substrate may be a medical device that demonstrates an ability to maintain gas permeability when in contact with blood or blood components, compared to a substantially identical medical device that has not been coated with a biomolecule using this process.

Abstract: The invention relates to a substrate of which at least one part of the surface thereof has been rendered hydrophobic and, for said purpose, has a hydrophobic surface structure consisting of an essentially-mineral silicon-containing sub-layer and an outer layer comprising a hydrophobic agent which is grafted onto said sub-layer. The invention is characterised in that the outer hydrophobic agent layer is applied to the sub-layer while the surface of the latter is in an activated state before being brought into contact with said hydrophobic agent. The invention also relates to rain-repellent glass comprising one such substrate, which is particularly suitable for use in the automobile, aviation, construction, electric household appliance and ophthalmic lens industries.