Abstract: A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber. After dispersion, this second gas is fed through pipes through the first dispersing chamber and into the reaction chamber around the first reaction gas. Said first reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the first reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via communicating holes.

Abstract: A process for preparing an electroluminescent device includes the steps of forming an insulating layer and a luminescent layer on a substrate, wherein the insulating and luminescent layers are respectively formed at different forming areas in the same deposition chamber.

Abstract: Si.sub.2 H.sub.6 and PH.sub.3 are introduced into a heated reaction tube in which a plurality of substrates are contained under vacuum pressure, thereby forming phosphor-doped silicon films on the substrates. By changing the flow of Si.sub.2 H.sub.6, a first layer consisting of a silicon film containing phosphor of low density, a second layer substantially consisting of phosphor, and a third layer consisting of substantially the same composition as that of the first layer are deposited in the order mentioned. Thereafter, the first through third layers are heated, thereby diffusing phosphor contained in the second layer. Thus, an integral film of uniform impurity density is formed from the first through third layers.

Abstract: A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.

Abstract: A method for the passivation of superconductive rare earth cuprates involves depositing thereon a thin film of an amorphous or diamond-like carbon film of a thickness ranging from 100 .ANG. to 10 microns. The cuprate film may be in the as-deposited form, so necessitating a subsequent annealing step to convert the film to a superconducting phase and to remove the carbon.

Abstract: A process is disclosed for coating phosphors with hydrolyzed alkylaluminum. The hydrolyzed alkylaluminum coating renders the phosphors insensitive to atmospheric moisture. the coating process involves vaporizing an aluminum-containing precursor such as trimethylaluminum or triethylaluminum in an inert gas stream and passing this through a fluidized bed containing the phosphor particles. Water vapor is also passed through the fluidized bed and the water and aluminum precursor react on the surface of the phosphor particles to form hydrolyzed trimethylaluminum or other alkylaluminum. The hydrolyzed trimethylaluminum or other alkylaluminum phosphors are particularly useful in electroluminescent lamps.

Abstract: A method provides a sequential continuous vapor deposition process comprising a plurality of steps for depositing a predetermined material upon a surface of a substrate mounted for relative movement within a reactor vessel between each of a plurality of gas emitters disposed within the vessel for separately and continuously emitting predetermined gases, each gas emitter having an exhaust port associated therewith for exhausting the said gas emitted by the said gas emitter from the reactor vessel, the method comprising the steps of: separating each of the plurality of gases within the reactor vessel by establishing pressure differences at each of said gas emitters, moving the substrate to pass immediately adjacent to a first one of said plurality of gas emitters for exposing the substrate to a first one of said gases in order to carry out a first step of the vapor deposition process and, moving the substrate to pass immediately adjacent to a second one of said plurality of gas emitters for exposing the substra

Abstract: Photoluminescent materials useful for detection of infrared light are prepared using a base material, first and second dopants, barium sulfate and a fusible salt. The base material is an alkaline earth metal sulfide such as strontium sulfide, calcium sulfide, or a mixture of strontium sulfide and calcium sulfide. Barium sulfate is used to increase the brightness of output light, whereas lithium fluoride is used to allow the material to be fused together. Samarium, cerium and europium compounds are used in specific examples as dopants for providing electron traps. The photoluminescent material is made according to a process involving drying the mixture in a dry inert atmosphere, and heating the mixture in the inert atmosphere in a graphite crucible to a fusing temperature. The resultant material can then be applied to a substrate using thin film physical vapor deposition techniques.

Abstract: The lumen maintenance of fluorescent lamps containing yttrium vanadate phosphors is markedly improved by the presence of a protective oxide layer for the phosphor. The protective oxide layer is produced by evaporating aluminum isopropoxide, in a vacuum, over phorphor particles forming a continuous aluminum isopropoxide over the phosphor particles. The isopropoxide coating is subsequently oxidized by lehring the phosphor at a temperature from about 500.degree. C. to 625.degree. C. forming an alumina coating on the phosphor particles.

Abstract: In a vacuum evaporation method for depositing a thin film on a substrate by heating a sublimable source material under vacuum to vaporize it, the source material is subjectd to vaporization in an unsintered state. Electron-beam heating may be employed. The primary advantage of avoiding precedent sintering of the source material is great reduction in scattering of fine particles of the source material in the vacuum chamber. Consequently the deposited film has an even and smooth surface. A representative of the sublimable source material is a II-VI compound semiconductor such as ZnS used as the host material of an electroluminescent phosphor. Thin-film electroluminsecent devices produced by using the vacuum evaporation method according to the invention possess improved reliability.

Abstract: The process for making a thin Molybdenum sulfide film on a substrate in which the physical properties vary in a wide range and can be adjusted to the desired values comprises depositing on the substrate from a reaction gas mixture in the gas phase. This can be accomplished by decomposing a volatile molybdenum compound together with a volatile sulfur compound as a reactive gas in a glow discharge to form the reaction gas mixture in the presence of the substrate. The molybdenum compound can be molybdenum hexacarbonyl. The sulfur compound can be hydrogen sulfide.

Abstract: Electroluminescent phosphors, electroluminescent panels and lamps made with such phosphors, and a process and apparatus for treating phosphors are disclosed in which the phosphor particles are coated with a very thin coating of SiO.sub.2, to protect the phosphor particles from aging due to moisture intrusion. The phosphor particles are coated in a cold wall reactor by the pyrolytic decomposition of silane in the presence of heat and oxygen to a coating thickness of approximatley between 0.1 and 3.0 microns. The apparatus and method of coating includes the placement of a quantity of phosphor in a cup-shaped heated reactor bowl and subjecting the particles to a temperature of about 490.degree. C. and an atmosphere of silane and oxygen, while continuously mechanically agitating the particles with a blade arrangement in which the particles are continuously rotated and turned so as to expose the surfaces of the heated particles to the reaction atmosphere.

Abstract: A fluorescent lamp containing a Y.sub.2 O.sub.3 or Al.sub.2 O.sub.3 coating on a layer of yttrium vanadate phosphor and a method of coating the layer of the yttrium vanadate phosphor with a continuous protective coating of Y.sub.2 O.sub.3 or Al.sub.2 O.sub.3 is described. The method comprises applying a coating of a metal, such as yttrium or aluminum, on the yttrium vanadate phosphor then lehring the metallic coating at about 500.degree. C. to about 625.degree. C. to form a continuous protective coating of Y.sub.2 O.sub.3 or Al.sub.2 O.sub.3 overlaying the layer of phosphor.

Abstract: An article, having particular use as a scintillator, includes a thin film of calcium sulfide on a substrate, such as alumina, quartz, sapphire, or most glasses. The material is first formed in bulk with cerium sulfide, cerium oxide, or cerium, and lithium fluoride. The material is applied by physical vapor deposition in a relatively thin film to the substrate, and then at least the luminescent material is subjected to a high temperature for a period of time to effect recrystallization and activation of the material, such that the material acquires luminescent characteristics.

Abstract: An electroluminescent device comprising an electroluminescent layer capable of emitting light under application of AC voltage, the electroluminescent layer comprising strontium sulfide as a matrix and containing at least one of halides and sulfides of cerium, europium, thulium, terbium and samarium, and having a lattice constant of not more than 6.04 .ANG. and a half-width value at the (111) face of not more than 0.21 degree has a higher brightness than an electroluminescent device having an electroluminescent layer comprising ZnS as a matrix.

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

Abstract: Vapor deposition crucible is provided at least twenty degrees from the central normal to a smooth surface of a screen on which luminescent material is to be deposited. During deposition the surface is rotated relative to the source to produce a layer having a regular structure and a good fill factor.

Abstract: A deposited film is formed by introducing a gaseous starting material, a gaseous halogenic oxidizing agent and at least one oxygen or nitrogen type oxidizing agent into a reaction space to form excited precursors and thereafter forming a deposited film on a substrate in a film forming space employing the excited precursors. If desired, a gaseous material containing a component for valence electron control can be added to the reaction space.

Abstract: An image-forming member for electrophotography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (D) for formation of a valence electron controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a doped deposited film.

Abstract: A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

Abstract: A method for forming a deposited film comprises introducing into a reaction space containing a substrate (a) a gaseous starting material for the formation of a deposited film, (b) a gaseous oxidizing agent, and optionally (c) a gaseous material containing a valence electron controller component; effecting chemical contact therebetween to form a plurality of precursors including precursors in an excited state; and forming a deposited film on the substrate with at least one of the precursors.

Abstract: A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.

Abstract: A process for producing an electroluminescent device comprises providing in a film forming space for forming an electroluminescent film a substrate having an electrode formed on the surface thereof, said electrtode optionally having a first insulating layer formed thereon, introducing into said film forming space the compounds (A), (B) and (C) represented by the general formulae (A), (B) and (C) shown below and a gaseous halogenic oxidizing agent capable of chemically reacting with at least one of said compounds (A), (B) and (C), respectively, to thereby form an electroluminescent film on said electrode of said substrate, and if desired forming a second insulating layer and electrode in succession thereon:MmRn (A)AaBb (B)JjQq (C)wherein m is a positive integer equal to the valence of R or said valence multiplied by an integer, n is a positive integer equal to the valence of M or said valence multiplied by an integer, M is zinc (Zn) element, R is hydrogen (H), halogen (X) or hydrocarbon group; a is a positive

Abstract: A method of producing a defined arsenic doping in silicon semiconductor substrates is provided. Preferably, the arsenic doping is produced in the sidewalls and floors of trenches having high aspect ratio which are etched into the substrates. An arseno-silicate glass layer is deposited into these trenches to be used as a diffusion source, the glass layer being removed after the diffusion. The arseno-silicate glass layer is deposited by thermal decomposition from the vapor phase of tetraethylortho silicate Si)OC.sub.2 H.sub.5).sub.4 and triethylarsenate AsO(OC.sub.2 H.sub.5).sub.3. A steep and reproducible doping profile having constant, maximum penetration depth and high arsenic concentration in the substrate surface which is needed for VLSI semiconductor circuits is obtained through the process of the present invention.

Abstract: According to a method of this invention for manufacturing a thin-film electroluminescent display panel of the type having a pair of electrodes sandwiching a three-layer structure composed of a layer covered with dielectric layers on both sides, a silicon nitride or silicon oxynitride film is formed on a layer comprising ZnS by a plasma chemical vapor deposition method with a mixture of silicon and nitrogen gases or of silicon, nitrogen and N.sub.2 O gases. Alternatively, this film may be formed in a double-layer structure, the second layer being formed with a mixture of silicon and ammonia gases or of silicon, ammonia and N.sub.2 O gases. A dielectric layer thus formed by a method embodying this invention can satisfactorily cover the protrusions and impurities in the layer underneath and thin-film electroluminescent elements manufactured by this method have superior brightness characteristics.

Abstract: A photoconverter wherein luminous substances having at least the atomistic property are dispersed among transparent intermediate substances substantially as individually isolated and as fixed together therewith so that, upon incident of light, the photoconverter is excited to cause each exciting photon to emit two or more photons for realizing multi-quantum emission.

Abstract: A radiation-sensitive, imageable article comprises in sequence a substrate, a vapor-deposited colorant layer capable of providing a reflection optical density of at least 0.6 to a 10 nm band of the electromagnetic spectrum between 280 and 900 nm, a vapor-deposited metal or metalloid layer of uniform composition, and a photosensitive resist layer which is non-integral with said colorant layer, the ratio of the thickness of said colorant layer to said metal or metalloid layer being at least 7:1.

Abstract: Lumen maintenance and spectral output of fluorescent lamps is improved by applying over the phosphor a vapor deposited film consisting of yttrium oxide and at least one activator. The vapor is generated by electron beam bombardment of the activated yttrium oxide target and the film is most efficacious when applied to a thickness of from about 0.2 microns to about 1.5 microns.

Abstract: A thin-film electroluminescent (EL) display panel comprises a thin-film EL layer, first and second dielectric layers, the thin-film EL layer being disposed between the dielectric layers, first and second metal oxide layers, and first and second electrodes, the first and second metal oxide layers being disposed respectively between the first and second dielectric layers, and the first and second electrodes. Preferably, at least one of the first and second metal oxide layers is made of Al.sub.2 O.sub.3, SiO.sub.2 or the like with a thickness of about 100-800.ANG. and at least one of the dielectric layers being about 1000-3000.ANG..

Abstract: A scintillation crystal is provided for a radiation detector, which comprises a first layer of a crystal material having relatively poor mechanical properties, however having a high energy resolution; and a second layer of a crystal material having relatively good mechanical and optical properties. Both layers are arranged in sandwich form.

Abstract: Formation of a plasma etch mask on a film on a substrate by photodecomposition of a gas at selective portions of the film's surface to deposit etch mask material and form the etch mask is disclosed. The photodecomposition by blanket illumination through a photomask and by direct write with a computer controlled laser are both disclosed. The formation of the etch mask can be immediately followed by the plasma etch without breaking vacuum.

Abstract: Disclosed is a method for applying a continuous protective coating to the surface of individual phosphor particles. The method involves chemical vapor deposition of the protective coating on individual particles of a phosphor powder while the phosphor particles are suspended in a fluidized bed. During the method, the fluidized particles are exposed to the vaporized coating precursor material at a first temperature, which is less than the decomposition temperature of the precursor material, and the precursor material is reacted to form the desired coating material at a second temperature, which is greater than or equal to the temperature at which the precursor material reacts to form the coating material.

Abstract: A method of electroluminescent panel manufacture in which a doped zinc chalcogenide phospher film--for example manganese doped zinc sulphide, is deposited upon an electrode bearing substrate in the presence of a hydrogen enriched atmosphere--for example a 90%:10% argon:hydrogen atmosphere. This is followed by rapid anneal treatment, the substrate being raised quickly to a temperature of 450.degree. C., or greater, and cooled rapidly. It is preferable that, prior to film deposition, the substrate is pretreated by baking in the hydrogen enriched atmosphere. An additional current density limiting film may be applied--a film of low resistance cermet material--for example silica/nickel 20% Ni in SiO.sub.2, or a film of amorphous silicon.

Abstract: A faceplate of a cathode ray tube is shown wherein a cathodoluminescent phosphor material 1 is deposited on glass faceplate 2. A metal nitride metal absorbing inhomogeneous film 3, where the metal is aluminum or silicon, is deposited on the back side of the phosphor material 1. To avoid unwanted reflections at the interface between the glass 2 and the phosphor 1, a homogeneous film 4 is optionally deposited on glass plate 2 prior to deposition of the phosphor film 1. Additionally, an anti-reflection coating 5 may also be optionally applied to the exterior of the glass plate 2 to eliminate reflection that would otherwise occur at the air-glass interface.

Abstract: A direct current electroluminescent device having a phosphor layer and coating electrodes, at least one of which is translucent, which has interposed between the phosphor layer and at least one of said electrodes a thin non-planar layer of an electrically non-conducting substance. The non-planar layer may have a cross section of undulating outline or may be a discontinuous layer, e.g. in the form of closely spaced dots. Preferably the non-planar layer is translucent and is arranged between the phosphor layer and a translucent electrode. Suitable materials for the non-planar layer include silicon monoxide, silicon dioxide, germanium dioxide, magnesium fluoride, cadmium fluoride, yttrium fluoride, yttrium oxide, zinc sulphide, copper sulphide.

Abstract: An input phosphor screen includes a substrate having a substantially smooth surface, and first and second phosphor layers both vapor-deposited sequentially on the substrate. The first layer is made of phosphor crystal particles having a mean diameter of 15 .mu.m or less. The second layer has a thickness ten or more times that of the first layer and is made of individual columnar crystals of alkali halide grown vertically on the crystal particles, standing close together with fine spaces therebetween. A third layer is preferably deposited on the second layer as a continuous film. These three layers can be deposited by evaporating a phosphor material or materials at a prescribed temperature and at a predetermined degree of vacuum.

Abstract: Red cathode ray phosphors are coated with a vapor deposited layer of cadmium selenide in order to achieve controlled color shifts in the light output of the phosphors. Such coated phosphors are especially suited for color television and monitor applications.

Abstract: A method and apparatus for microencapsulating an electroluminescent phosphor with an extremely thin coating. The process involves vaporizing a poly-para-xylylene, pyrolyzing the resulting vapors to form reactive monomeric radicals, and then passing such vaporous radicals to a vacuum deposition zone where they contact tumbling particles of an electroluminescent phosphor under vacuum conditions. As the particles are being coated, they are sifted by means of a screen. The reactive monomeric radicals deposit on the tumbling particles, are adsorbed by the particles, and polymerized into a very thin coating on the surfaces of the particles.

Abstract: An input screen and method of forming one for an image intensifier tube including a substrate in which a plurality of crystal grains of aluminum or aluminum alloy are formed in a plane with the crystal grains having non-directional shapes in the plane. The crystal grains are formed by heating in a vacuum or non-oxidizing atmosphere at a temperature between 450.degree. C. and 650.degree. C. The oxidized layer is next removed by an etchant, and a phosphor layer formed on the crystal grains by vapor-deposit.

Abstract: A method for preparing display electrode layers in an electrochromic display device, comprises the steps of forming a transparent, conductive film on a substrate, forming an insulating film over the entire surface of the transparent, conductive film forming a mask at portions on the insulating film other than a display pattern and a lead-in electrode, removing the insulating film at the display pattern and the lead-in electrode, forming an electrochromic material layer over entire portions other than the lead-in electrode, and removing the mask formed on the insulating film. Preferably, an inorganic resist is used to form the mask at the portions on the insulating film.

Abstract: A phosphor screen is produced by a vacuum deposition process using a planetary structure for simultaneously rotating and revolving structured substrates within a chamber. A thermal radiation shield is provided at the central axis and, because of the offset positions of the substrates, the deposited phosphor layers are formed with thicker edges than centers to thereby inherently exhibit uniformity correction characteristics. The process allows for single-layer depositions of relatively great thicknesses which, when annealed for relatively short periods of time, are comprised primarily of columnar fibers aligned normally to the substrate to inhibit lateral scattering of generated light within the screen.

Abstract: A new silicon based semiconductor device comprises a layer of amorphous silicon in which the density of energy states in the energy gap has been reduced by hydrogenation; this layer is deposited on a layer of a hydrogen-containing substrate material that can supply hydrogen in atomic form to the amorphous silicon. In processes of the invention the silicon layer and a substrate layer are hydrogenated separately to permit optimum hydrogenation; the silicon layer may be deposited without hydrogenation and hydrogenated subsequently with hydrogen from the substrate material. A specific example consists of a layer of hydrogenated amorphous silicon of about 1 micrometer thickness deposited on a hydrogen-containing chromium layer which is itself deposited on a carrier, the silicon then forming the active element of a photovoltaic cell particularly functional as a solar cell.

Abstract: A method of making the cathode of a diode image intensifier tube by evaporating some alkali metals and antimony on to the inner surface of a cathode window which by means of a layer of frit is joined to a metallic cathode flange, and in which there is provided between the cathode and the cathode flange, or, as the case may be, the cathode housing, an electrical resistance of a pre-determined value such that at light levels at which there is a danger of the anode being burnt, the diode image intensifier tube is defocussed or cut off, and wherein prior to the evaporation of the metals an alkali-resistant and insulating layer is applied to the frit layer, and that the evaporation of the antimony is carried out so that there is formed between the cathode and the cathode flange an area extending around the cathode and where no antimony is present, and that at least one galvanic connection is passed vacuum-tight outside the diode image intensifier tube, and one end of said connection is arranged at the place of the

Abstract: A process for preparing polymer electrets comprising the following steps:(a) providing a parylene film having one side affixed to a metal layer and grounding said metal layer;(b) charging the free side of the film with a direct current corona, the charge being of sufficient magnitude to convert the film to an electret;(c) providing p-xylylene monomer vapor in sufficient amount to coat the charged film; and(d) introducing the vapor from step (c) and the electret into a deposition zone, said zone being under vacuum and at a temperature at which the vapor will condense, whereby the electret is conformally coated with parylene.

Abstract: A process for preparing polymer electrets comprising the following steps:(a) providing two electrodes in a deposition zone, said electrodes being in a spaced relationship to one another, having opposing surfaces, and being connected to an external voltage source capable of impressing an intense electric field between the opposing surfaces;(b) providing a dipolar substituted p-xylylene monomer vapor in sufficient amount to coat the opposing surfaces of the electrodes;(c) activating the power source; and(d) introducing the vapor from step (b) into the deposition zone, said zone being under vacuum and at a temperature at which the vapor will condense,whereby the vapor condenses on the opposing surfaces of the electrodes, the monomer polymerizing to parylene, coating said surfaces, and forming electrets.

Abstract: In an X-ray image intensifier consisting of a scintillator screen associated with a photocathode, an electron-optical system and an output screen on which a strong visible image appears, resolution is improved by providing the scintillator screen, formed by a layer of cesium iodide doped with sodium deposited onto the substrate, a structure of needles approximately micrometers in diameter which are kept in the form of separate needles during the subsequent heat treatment by virtue of the presence of silicon oxide in the cesium iodide lattice.

Abstract: Improved adhesion of the phosphor coating in a fluorescent lamp having a transparent film of conductive material (such as tin oxide) on the inner surface of the bulb is obtained by adding small but correlated amounts of finely-divided aluminum oxide, calcium nitrate, and ammonium nitrate to the water-base phosphor-coating composition. The combination of additives bonds the phosphor particles to the bulb despite the intervening layer of tin oxide and the lower lehring temperature required to preserve its conductivity. When the conductive film is composed of a material which can tolerate higher lehring temperatures, other additives such as barium nitrate, cadmium nitrate and strontium nitrate can be substituted for or admixed with the calcium nitrate.

Abstract: A method of manufacturing an input screen for an image intensifier which comprises the steps of thermally depositing a phosphor layer of alkaline metal halide on one side of a substrate to provide a phosphor layer formed of columnar crystals extending in a direction substantially perpendicular to the plane of the substrate; treating the surface of the phosphor layer by a liquid material of low boiling point and incapable of dissolving the phosphor, thereby producing cracks extending in a direction substantially perpendicular to the plane of the substrate in said phosphor layer; and forming a photoemissive layer on the surface of the phosphor layer, thereby enabling the phosphor layer to have a high light-guiding property and ensuring the prominent elevation of the resolving power of an image intensifier.

Abstract: Coating apparatus having a vacuum chamber and a rotary motion assembly rotatably mounted in the vacuum chamber. Drive means is carried by the vacuum chamber for rotating the rotary motion assembly on an axis. At least one coating source is disposed within the chamber and is generally coincident with the axis of rotation for the rotary motion assembly. A mask structure is mounted in the chamber for rotational movement about an axis which is generally coincident with the axis of rotation of the rotary motion assembly. Additional drive means is provided for rotating the mask structure as the rotary motion assembly is rotated.