Abstract: A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

Abstract: A deposited film is processed in a preselected pattern by discharging electric energy through the film across a gas dielectric. In a preferred embodiment, a voltage pulse chain is applied to a moving probe spaced a preselected distance from the film. The discharge either removes the film material over the pattern to expose underlying material, or produces a conductive path from the top to the bottom of the film.

Abstract: A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.

Abstract: A solar concentrator-photovoltaic module having a matrix of miniaturized photovoltaic cells is formed by using a laser beam to form the miniaturized photovoltaic cell sites in situ. A laminated sheet is formed by a light-transmissive lens sheet having a matrix of lenses, and a substrate including a conductor layer formed onto the bottom side of the lens sheet. The laminated sheet is then irradiated using laser beams directed normal to and through each lens of the lens sheet, to perforate the substrate including the conductor layer forming cell sites. Cells can be formed in situ by applying an amorphous or multi-crystalline semi-conductor material to the cell sites from the bottom of the laminated sheet. The laminated sheet is then irradiated further with laser beams directed through each of the lenses, to thereby convert the amorphous material to a properly doped and fully crystalline photovoltaic junction.

Abstract: The present invention relates to a process for passivation of photoconductive detectors constituted by Hg Cd Te, wherein a layer of native oxide is formed on the faces of an Hg Cd Te wafer and it is made to grow, by pure chemical oxidation in an aqueous solution of K.sub.3 Fe(CN).sub.6 and of KOH. An ordinary layer of ZnS is then formed on the oxide layer. The process makes it possible to produce high-performance infrared detectors, simply.

Abstract: A process is disclosed for fabricating an improved antireflection coating on a substrate. A layer of dielectric material having a first thickness and a first index of refraction are formed overlying a substrate. The dielectric material is implanted with hydrogen to form an implanted surface region having a thickness less than the thickness of the entire layer of dielectric material. The hydrogen reduces the index of refraction of the implanted region to a value less than the index of refraction of the initial layer. The structure overlying the substrate thus includes two integral layers having different indices of refraction with the lower index of refraction, as desired, at the surface of the dielectric material. The process can be extended by further implantation to provide an increased number of distinct layers of differing index or to provide a continuum of regions of varying index of refraction.

Abstract: The present invention provides a method of forming a metal pattern on a solar cell comprising the steps of forcing a molten metal through an aligned array of orifices by use of gas pressure; vibrating the aligned array of orifices to form the molten metal issuing from the orifices into metal droplets; moving a solar cell collinearly with the aligned array of orifices; and allowing each series of metal droplets from a single orifice to fall onto a specific region of the solar cell to build up a metal layer of increasing thickness, each metal droplet being permitted sufficient time to solidify prior to allowing the next metal droplet to strike the metal layer.

Abstract: A method and apparatus for manufacturing tape-shaped silicon bodies for solar cells wherein a tape-shaped reticulate carrier is passed vertically downwardly through a drawing nozzle including a slot which is full of molten silicon. The drawing nozzle is located above the level of molten silicon in a vat containing such molten silicon, and capillary means are provided to deliver the molten silicon from the vat into the drawing nozzle to fill the same with the molten silicon.

Abstract: An article having a primed surface or improved electric charge transfer properties is disclosed. The surface has discrete sites of inorganic materials thereon.

Abstract: The continuous production of solar cells by the glow discharge (plasma) deposition of layers of varying electrical characteristics is achieved by advancing a substrate through a succession of deposition chambers. Each of the chambers is dedicated to a specific material type deposition. The chambers are mutually isolated to avoid the undesired admixture of reaction gases therebetween. Each plasma deposition is carried out in its glow discharge area, chamber, or chambers, with isolation between the plasma regions dedicated to different material types. Masking, mechanical or lithographic, can be employed relative to the substrate to cause the deposition in the desired configuration. After the semiconductor deposition is complete, top contact and anti-reflection layer or layers are deposited, followed by a protective lamination.

Abstract: A substrate is made for silicon solar cells by heating a sheet of large-grained silicon steel at a temperature of at least about 1300.degree. C. in an atmosphere of hydrogen and tungsten hexafluoride (or hexachloride) at a partial pressure ratio of hydrogen to tungsten hexafluoride of about 3 to about 6 to deposit an epitaxial layer of tungsten on said sheet of silicon steel. Epitaxial silicon can then be deposited in a conventional manner on the layer of epitaxial tungsten.

Abstract: In a solid-state imaging device wherein filters of the three primary colors in the mosaic filter configuration are stacked on a solid-state imager LSI in which a plurality of picture elements each consisting of a photoelectric conversion element and a scanning element are arrayed in the shape of a matrix; a method of producing a solid-state imaging device wherein the dimensions of filter layout patterns on exposure masks for the respective colors used in case of manufacturing the color filters of:T.sub.R <T.sub.B <T.sub.Gwhere T.sub.R denotes the thickness of the red filter, T.sub.G that of the green filter and T.sub.B that of the blue filter, are smaller than the dimensions of the picture elements, and especially, the dimensions of the filter layout patterns on the exposure mask for manufacturing the green filters are the smallest.

Abstract: Contact electrodes on a semiconductor device (50) such as a photovoltaic solar cell is formed by screening through a mask (38) onto a surface (40) a pattern of ink containing a dispersion of lower melting, sinterable metal (tin) coated base metal (copper) particles dispersed in a liquid vehicle including a vaporizable binder polymer and a fluorocarbon polymer. On firing the screen coated device (46) in an oven (48) the binder polymer is vaporized, the fluorocarbon vapors etch the surface and the coated metal particles sinter without being oxidized to form an adherent, coherent, contact electrode (53).

Abstract: The present invention is a solution and a method for its use in adhering nickel to a tin-oxide surface.

Abstract: A copper stabilized dipping solution for a photovoltaic device incorporating a Cu.sub.x S layer. The dipping solution contains copper metal which stabilizes the solution by providing a source of copper to continuously reduce CU.sup.++ ions to Cu.sup.+ ions. The copper has no adverse effect on the topochemical formation of a copper sulfide layer on, for example, a semiconductor cadmium sulfide layer in a photovoltaic device. Preferably, the copper stabilized dipping solution has a pH less than about 4.5 and includes counter ions such as chloride or bromide ions.

Abstract: An image sensor having a photoconductor array comprising tightly adherent CdS-CdSe or CdS-CdTe photoconductive solid solution thin film and having fast photoresponse speed and excellent spectral sensitivity characteristics.

Abstract: A method for fabricating a solid-state imaging device using photoconductive film, comprising the step of depositing a photoconductive material onto a scanner IC by the use of a shield plate, the scanner IC including vertical switching MOS transistors and horizontal switching MOS transistors arrayed in the form of a matrix and vertical and horizontal scanning shift registers for scanning the vertical and horizontal switching MOS transistors respectively, the shield plate having an open part corresponding to a vertical switching MOS transistor array area.

Abstract: A process is provided for the preparation of thin films of cadmium sulfide by deposition of cadmium sulfide formed in the thermal decomposition of an aqueous solution of cadmium ammonia thiocyanate complex, useful particularly in the preparation of thin cadmium sulfide films on electrically-conductive substrates useful in photovoltaic cells, and on thermally-conductive substrates useful in solar energy absorbers, for energy conversion systems.

Abstract: The present invention teaches a method for applying an anti-reflection coating to solar cells whereby the coating is interdispersed among the cell's electrodes on the cell's junction surface. The method includes coating the solar cell's surface with an anti-reflection layer, selectively etching a pattern through the anti-reflection layer, which corresponds to the desired electrode pattern and electrolessly plating a layer of nickel onto the cell's surface.

Abstract: An Al-Mg alloy is mixed with a Ni-Sb alloy or Al, in powder form, to form a thick-film metallizing paste useful for making low resistance electrically conductive contacts to a silicon solar cell coated with Si.sub.3 N.sub.4.

Abstract: Method and apparatus for minimizing the deleterious effects of structural imperfections in polycrystalline silicon solar cells uses a high pressure plasma system. The high pressure plasma system is used to introduce atomic hydrogen into the polycrystalline silicon substrates or into polycrystalline silicon solar cells. The silicon can be subjected to the hydrogenation either before or after it has a junction. The high pressure plasma system includes a high pressure chamber having a first and a second auxiliary chamber coupled to the high pressure chamber.

Abstract: A silicon solar cell is metallized with a nickel-antimony alloy to provide external contacts.

Abstract: A method of manufacturing a solar cell comprising a silicon disc having a region of the n-conductivity type adjoining a major surface, in which an electrode containing silver is provided on the n-type region by means of a silk-screening process, characterized in that during the silk-screening process a paste is used which, in addition to silver, contains an addition in an elementary form, which addition belongs to the group of elements consisting of bismuth, magnesium and indium, that after providing the electrode a thermal treatment in an oxidizing atmosphere is carried out, and that the electrode is then subjected to a chemical or mechanical treatment to improve the junction resistance with the silicon.

Abstract: A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.

Abstract: A photovoltaic cell is formed by applying electrical contact material through an antireflective coating on the light receiving surface of the cell by flame, arc or plasma spraying. The cell so formed has a metal contact spaced portions of which are in electrical contact with the light-receiving surface of the cell.

Abstract: A method, and the composition, for the application of an antireflective coating on solar cells and the subsequent application of metal contacts comprising applying a screen to the surface of a solar cell, applying a paste comprising a metal alkoxide over the screen, heat treating the cell and metal alkoxide paste, and nickel plating the resultant cell.

Abstract: Forming a film by spraying onto a heated substrate an atomized solution containing the appropriate salt of a constituent element of the film and an agent in sufficient amount to change the oxidation state of at least one solute element of the spray solution after contacting the heated substrate.

Abstract: An apparatus to deposit material on a substrate, such as in the making of thin film solar cells, consists of two chambers. A manifold chamber having a plurality of spaced nozzles assures efficient and uniform deposition on a substrate. The rate of depositions is controlled by an orifice in a passageway connecting the manifold chamber to an evaporation chamber.

Abstract: A solar cell structure is produced by a method comprising baking the solar cell, containing a gridded top layer of cuprous sulfide formed on a base of cadmium sulfide, for 20 minutes to 10 hours, to produce a copper doped CdS electrically insulating region in the cadmium sulfide base near the interface of the cuprous sulfide and the cadmium sulfide; removing the cuprous sulfide, and the copper doped CdS insulating region not covered by the grid, to provide a bare cadmium sulfide areas; and then forming a cuprous sulfide layer on the exposed areas not covered by the grid.

Abstract: A technique for manufacturing durable, reliable solar cells by a continuous process suitable for large-scale manufacture involves, in substance, providing a reel of thin metal foil substrate and forming on the substrate a series of layers operative to form a photovoltaic junction, short prevention blocking layers, contacts and integral encapsulation. The foil substrate is processed as a continuous reel substantially until final testing at which point, if desired, it can be cut into individual cells for deployment. In comparison with a batch process, the continuous technique can reduce manufacturing cost by as much as a factor of two.

Abstract: A method of forming an electrical contact on the surface of a photovoltaic cell in which particles of electrically conductive material are formed at a temperature in excess of the alloying temperature of the material and silicon, and thereafter spraying, e.g., flame spraying, arc spraying, or plasma spraying, the particles to one or both major surfaces of the cell so that the particles alloy with the silicon and adhere to the surface of the cell.

Abstract: In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.

Abstract: A method of forming an electrical contact to a shallow junction silicon semiconductor device such as a solar cell comprises evaporating a sufficient amount of a metal which upon heating will form a silicide with the silicon to a predetermined depth and thereafter oxidizing the surface of the silicon so as to form a shallower junction in the unoxidized portions of said silicon. The portion of the silicon device which has formed the silicide does not oxidize and forms an electrical contact to the silicon. In addition, the metal silicide can have additional metal plated thereto to lower the sheet resistivity and resistance of the electrical contact.

Abstract: The present invention is an improvement to the method of growing silicon films on a substrate by bringing the substrate in contact with molten silicon. The improved growth technique may be classified as an asymmetric mode of growth of silicon on the substrate and is characterized by the substrate being maintained at a higher temperature than the solidification of silicon in the area of the substrate where the silicon layer growth is taking place, that is in the area of the liquid-solid interface. The higher temperature of the substrate causes the liquid-solid interface to be tilted to be nearly parallel to the substrate surface but inclined at a reentrant angle, so that the leading edge of the crystallization front is away from the substrate. This provides several advantages including increased growth speed, a nonhomogeneous doping of the silicon layer, that is an impurity concentration gradient and results in a high-low junction at the back surface and gives the back surface field effect.

Abstract: The present invention is an improvement to the method of growing silicon films on a substrate by bringing the substrate in contact with molten silicon. The improved growth technique may be classified as an asymmetric mode of growth of silicon on the substrate and is characterized by the substrate being maintained at a lower temperature than the solidification of silicon in the area of the substrate where the silicon layer growth is taking place, that is in the area of the liquid-solid interface. The lower temperature of the substrate, say 5.degree.-10.degree. C. below the freezing temperature of silicon, causes the liquid-solid interface to be tilted to be nearly parallel to the substrate surface but inclined at a reentrant angle, so that the leading edge of the crystallization front is on the substrate. This provides an advantage of increased growth speed.

Abstract: A method for forming a thin film of cerium oxide as a blocking layer which constitutes a portion of a photoelectric film of a blocking type image pickup tube is disclosed. A substrate deposition rate in a vacuum deposition process is established in a range between 0.01 to 0.6 A/sec to prevent the deposition of particles which result in black or white spots in a picture image. It is more effective to select a particle size of 5 .mu. or more for the primary particles to be deposited.

Abstract: A method of making silicon solar cells and other silicon photovoltaic cells. The method includes the steps of forming a silicon element having a metallic electrode coating on one surface of the element, applying to the other surface of the element a coating containing aluminum and silicon and heating the coated element at a temperature below the eutectic temperature of aluminum-silicon to form an antireflective coating of a fine matrix of silicon pyramids doped with aluminum. The matrix formed on the surface of the silicon has an overlying aluminum coating. A portion of the aluminum coating is removed to expose the matrix for use as a photovoltaic cell.

Abstract: A process for the manufacture of an electrooptical display device including a circuit board and a liquid crystal display cell mounted on the circuit board, including forming a circuit board having at least one light conducting region; disposing the liquid crystal display cell adjacent the light conducting region of the circuit board; locating at least one light emitting element in the circuit board for illuminating the light conducting region; and attaching a semi-transparent reflector to the liquid crystal cell; wherein at least part of the circuit board is manufactured by combining a reflecting layer, which is produced by the deposition of a reflective material on a substrate or on one side of a mesh, with a light diffusing substance, by embedding these two materials together in a transparent polyester or epoxy resin.

Abstract: A photovoltaic cell that incorporates a PbO-SnO heterojunction of graded composition which, among other applications, can be utilized for the conversion of solar energy to electrical energy. A p-i-n junction is formed while PbO and SnO are simultaneously deposited on a substrate in a varying ratio that is either decreased or increased to form the compositions Pb.sub.1-x Sn.sub.x O where x varies in the range of 0 to 1.

Abstract: A method of pattern generating a circuit film and adjacent barrier film on a substrate. A continuous layer of circuit film is applied to the substrate surface, and a photoresist pattern is delineated on the circuit film such that the photoresist remains on the circuit film pattern area. The area of circuit film not covered by photoresist is then removed, exposing the substrate surface. While retaining the photoresist which covers the circuit film pattern, the entire substrate surface is coated with the barrier film. The remaining photoresist is then removed, causing the barrier film which covers it to lift off, thereby exposing the circuit film pattern.

Abstract: Semiconductor particles are distributed in a single level layer orientation in a glass sheet with portions of each particle exposed at both surfaces of the sheet. A metal layer on one surface of the sheet is in ohmic contact with the body of each particle and forms a common electrode.

Abstract: A silicon solar cell having a body of boron doped P-type silicon material with a shallow P/N junction formed therein through diffusion of phosphorous into one surface thereof. A contact pattern of conductive material is formed on the surface of the solar cell in which the P/N junction is formed. The pattern is formed by first depositing a metallic layer upon the entire surface of the body and then applying the contact pattern by printing upon the surface of the metal. The metal has a characteristic such that when heated in the presence of oxygen to an appropriate temperature to fire the conductive material, it oxidizes and forms an anti-reflective layer on the surface of the cell except in those areas where the printed contact pattern is disposed. In the areas of the printed contact pattern the metal forms an ohmic contact between the surface of the silicon and the printed contact pattern and provides a barrier to preclude the conductive contact pattern material from punching through the shallow P/N junction.

Abstract: A method of making an imaging system wherein an imaging member comprising a layer of softenable substantially electrically insulating material containing a dispersion of randomly oriented electrically photosensitive orientation particles is imaged by: (A) applying a uniform electric field across said member, (B) imagewise exposing said member to activating electromagnetic radiation, and (C) developing said member by decreasing the resistance of said softenable layer to reorientation of said orientation particles sufficiently to allow imagewise reorientation of said orientation particles, comprising providing an electrically insulating material, adding photosensitive electret particles and forming a layer while applying vibration.

Abstract: A transparent, conductive collector layer containing conductive metal channels is formed as a layer on a photovoltaic substrate by coating a photovoltaic substract with a conductive mixed metal layer; attaching a heat sink having portions protruding from one of its surfaces which define a continuous pattern in combination with recessed regions among said protruding portions to said substrate such that said protruding portions of said heat sink are in contact with the conductive layer of said substrate; andHeating said substrate while simultaneously oxidizing the portions of the conductive layer exposed to a gaseous oxidizing substance forced into said recessed regions of said heat sink, thereby creating a transparent metal oxide layer on said substrate containing a continuous pattern of highly conductive metal channels in said layer.

Abstract: A silicon solar cell having a body of boron doped P-type silicon material with a shallow P/N junction formed therein through diffusion of phosphorous into one surface thereof. A contact pattern of conductive material is formed on the surface of the solar cell in which the P/N junction is formed. The pattern is formed by first depositing a metallic layer upon the entire surface of the body and then applying the contact pattern by printing upon the surface of the metal. The metal has a characteristic such that when heated in the presence of oxygen to an appropriate temperature to fire the conductive material, it oxidizes and forms an anti-reflective layer on the surface of the cell except in those areas where the printed contact pattern is disposed. In the areas of the printed contact pattern the metal forms an ohmic contact between the surface of the silicon and the printed contact pattern and provides a barrier to preclude the conductive contact pattern material from punching through the shallow P/N junction.

Abstract: Diffusants are applied onto semiconductor solar cell substrates using screen printing techniques. The method is applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, simultaneous diffusion of both dopants can be performed with a single furnace pass.

Abstract: A method of manufacturing a film thermopile, whereby a film of a thermoelectric semiconductor material which is an n-type stoichiometric solid solution containing Bi.sub.2 Te.sub.3 and Sb.sub.2 Te.sub.3 is deposited on a substrate. Then heating is effected so that adjacent arms of the film are at different temperatures, some at a temperature of not above 300.degree. C, and others at a temperature of not less than 350.degree. C.

Abstract: An improved method for providing electrical conductive paths in a Dewar flask is disclosed. A thin metal film is deposited over the side and top of the inner flask of the Dewar. Portions of the metal film are then selectively removed to provide electrical conductive paths which extend from the side on to the top of the inner flask.

Abstract: A method of making low cost photovoltaic cells on a large scale basis by means of a continuous process of coating sheet glass while the sheet glass moves in and has its under surface immersed in a tank of molten material, comprising forming the film of CdS microcrystals on the glass sheet, which has previously been coated with transparent SnO.sub.x to a thickness of about 0.3 to 0.6 microns. A water solution of a cadmium salt, a sulphur compound, and an aluminum containing soluble compound is intermittenty sprayed on said glass while its exposed surface is maintained at a constant temperature in the range 500.degree. F to 1100.degree. F and while irradiating the surface with intense ultraviolet light so as to form a film of CdS microcrystals. This CdS film has Al impregnated within the stratum of the film adjacent to the SnO.sub.x, but only optionally has Al impregnated in the stratum of the CdS film adjacent to the exposed surface of the CdS film.

Abstract: A transparent, conductive collector layer containing conductive metal channels is formed as a layer on a photovoltaic substrate by coating a photovoltaic substrate with a conductive mixed metal layer; attaching a heat sink having portions protruding from one of its surfaces which define a continuous pattern in combination with recessed regions among said protruding portions to said substrate such that said protruding portions of said heat sink are in contact with the conductive layer of said substrate; andHeating said substrate while simultaneously oxidizing the portions of the conductive layer exposed to a gaseous oxidizing substance forced into said recessed regions of said heat sink, thereby creating a transparent metal oxide layer on said substrate containing a continuous pattern of highly conductive metal channels in said layer.