Abstract: An apparatus is provided that includes a magnetic tunnel junction, a magnetic assist layer coupled to the magnetic tunnel junction, a non-magnetic layer disposed between the free layer and the magnetic assist layer, and a spin Hall effect layer coupled to the magnetic assist layer. The magnetic tunnel junction includes a free layer in a plane, the free layer including a switchable magnetization direction perpendicular to the plane. The magnetic assist layer includes a magnetization direction parallel to the plane and free to rotate about an axis perpendicular to the plane.

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

Abstract: A process for chemical mechanical polishing a substrate containing cobalt and TiN to planarize the surface and at least improve surface topography of the substrate. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; aspartic acid or salts thereof; and, colloidal silica abrasives with diameters of ?25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away to planarize the substrate to provide improved cobalt:TiN removal rate selectivity.

Abstract: A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.

Abstract: A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.

Abstract: Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent.

Abstract: Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.

Abstract: Disclosed are a magnetic sheet, a method of manufacturing the same and an antenna including the magnetic sheet. In the magnetic sheet manufactured by stacking a plurality of green sheets on top of each other and calcining the stacked plurality of green sheets, the plurality of green sheets are stacked after a different material layer is formed on a certain portion of both surfaces or one surface of at least one of the plurality of green sheets.

Abstract: A device comprising a magnetic element, which comprises a magnetic material, wherein the magnetic element is adapted to absorb hydrogen to form hydride. The magnetic aspect of the system enhances the hydrogen storage. Also disclosed is a metal hydride element comprising a magnetic material and absorbed hydrogen. The magnetic element and the metal hydride element can be an electrode. Further disclosed are methods for making and using the electrode.

Abstract: A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.

Abstract: A magnetic material is disclosed, which includes magnetic particles containing at least one magnetic metal selected from the group including Fe, Co and Ni, and at least one non-magnetic metal selected from Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, rare earth elements, Ba and Sr; a first coating layer of a first oxide that covers at least a portion of the magnetic particles; oxide particles of a second oxide that is present between the magnetic particles and constitutes an eutectic reaction system with the first oxide; and an oxide phase that is present between the magnetic particles and has an eutectic structure of the first oxide and the second oxide.

Abstract: Textured ceramic compositions having improved piezoelectric characteristics as compared with their random counterparts are provided. Methods of making the compositions and devices using them are also included. More particularly, compositions comprising textured ceramic Na0.5Bi0.5TiO3—BaTiO3(NBT-BT) materials synthesized from high aspect ratio NBT seeds exhibit improved characteristics, including an increased longitudinal piezoelectric constant (d33) and magnetoelectric coupling coefficient over randomly oriented NBT-BT. Additionally provided are compositions comprising of nanostructured Na0.5B0.5TiO3—BaTiO3 ferroelectric whiskers having a high aspect ratio. Nanostructured whiskers can be used to improve the piezoelectric properties of the bulk ceramics. The inventive materials are useful in microelectronic devices, with some finding particular application as multilayer actuators and transducers.

Abstract: There are provided a multilayer ferrite sheet capable of performing communications in a wideband frequency, an antenna device using the same, and a manufacturing method thereof. The multilayer ferrite sheet includes: a Y-type hexaferrite layer; and a Z-type hexaferrite layer, wherein the Y-type hexaferrite and the Z-type hexaferrite are alternately laminated.

Abstract: The practical application of incorporating magnetic receptive printing media coupled with the use of an underlying specifically referenced magnet allows the multi layering of magnetic media while maintaining the reference of position on said surface. This is achieved by aligning the polarity lines to the benefit of the intended design while fabricating the first layer to receive the second or subsequent layers to interact with the intended design.

Abstract: A core-shell type magnetic particle comprises magnetic metal particle and an oxide coating layer formed on the surface of the magnetic metal particle. The magnetic metal particle contains a magnetic metal containing at least one selected from the group consisting of Fe, Co and Ni, a nonmagnetic metal and at least one element selected from carbon and nitrogen. The oxide coating layer is constituted of an oxide or a composite oxide containing the nonmagnetic metal which is one of the constituents of the magnetic metal particle.

Abstract: A structural member for a manufacturing apparatus has a metal base member mainly composed of aluminum, a high-purity aluminum film formed on the surface of the metal base member, and a nonporous amorphous aluminum oxide passivation film which is formed by anodizing the high-purity aluminum film. A method for producing a structural member for a manufacturing apparatus, includes forming a high-purity aluminum film on the surface of a metal base member mainly composed of aluminum, and anodizing the high-purity aluminum film in a chemical conversion liquid having a pH of 4-10 and containing a nonaqueous solvent, which has a dielectric constant lower than that of water and dissolves water, thereby converting at least a surface portion of the high-purity aluminum film into a nonporous amorphous aluminum oxide passivation film.

Abstract: A hard magnet may include a seed layer including a first component including at least one of a Pt-group metal, Fe, Mn, and Co, a cap layer comprising the first component, and a multilayer stack between the seed layer and the cap layer. In some embodiments, the multilayer stack may include a first layer of including the first component and a second component including at least one of a Pt-group metal, Fe, Mn, and Co, where the second component is different than the first component. The multilayer stack may further include a second layer formed over the first layer and including the second component, and a third layer formed over the second layer and including the first component and the second component.

Abstract: The corrosion-resistant brick is a corrosion-resistant brick obtained by, in an Al—Cr-based brick, an Al—Mg-based brick and a Cr—Mg-based brick, providing a layer of magnetite powder on a brick surface, and heating and melting the magnetite powder so as to react the respective components of the brick with Fe, thereby forming a coating layer which is a ternary oxide of the brick components and Fe, and is made of a spinel solid solution having a melting point of 1600° C. or higher.

Abstract: A paper includes a paper body containing pulp fibers, a low electric-resistance region provided in a layer inside the paper body and being lower than the paper body in electric resistivity, and magnetic bodies arranged inside the low electric-resistance region and having a large Barkhausen effect.

Abstract: The invention concerns a device for magnetically transferring indicia, such as a design or an image, to a wet coating layer applied on a substrate, such as a sheet or a web, wherein the said coating layer comprises at least one type of magnetic or magnetizable particles; said device comprising a) at least one magnetized permanent-magnetic plate (2) carrying relief, engravings or cut-outs, mounted such that its relief surface remains accessible, b) at least one additional magnet (3), disposed below said at least one permanent-magnetic plate, facing the surface of the magnetic plate which is opposite to the relief, engraving or cut-out, and c) a holder (1), which has the mechanical function to hold the pieces together in fixed positions. A method for producing the device, the use of the device, and magnetically induced designs obtained with the device, which are useful for protecting currency, value—and identity documents, are disclosed as well.

Abstract: This rare earth magnet having high strength and high electrical resistance has a structure including an R—Fe—B-based rare earth magnet particles 18 which are enclosed with a high strength and high electrical resistance composite layer 12. The high strength and high electrical resistance composite layer 12 is constituted from a glass-based layer 16 that has a structure comprising a glass phase or R oxide particles 13 dispersed in glass phase, and R oxide particle-based mixture layers 17 that are formed on both sides of the glass-based layer 16 and contain an R-rich alloy phase 14 which contains 50 atomic % or more of R in the grain boundary of the R oxide particles.

Abstract: An apparatus and associated method are generally directed to a magnetic shield capable of screening magnetic flux with in-plane anisotropy. Various embodiments of the present invention may have at least one magnetic shield. The shield may be constructed of a Cobalt-Iridium compound capable of providing in-plane anisotropy along a longitudinal plane of the shield.

Abstract: An apparatus includes a first magnetic layer including a plurality of grains. The first magnetic layer has a first anisotropy value. The apparatus also includes a second magnetic layer including a plurality of grains. The second magnetic layer has a second anisotropy value that is different than the first anisotropy value. The apparatus also includes an exchange tuning layer including a plurality of grains and located between the first and second magnetic layers. The exchange tuning layer has stronger inter-granular exchange coupling than the first and second magnetic layers. The exchange tuning layer has an anisotropy value less than the first and second anisotropy values.

Abstract: A magnetic semiconductor material contains at least one type of transition metals (Mn2+, Fe3+, Ru3+, Re2+, and Os3+) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.

Abstract: A rare-earth magnet includes a magnet body made of an R—Fe—B based rare-earth magnet material (where R is at least one rare-earth element) and a metal film that has been deposited on the surface of the magnet body. The magnet further includes a plurality of reaction layers between the magnet body and the metal film. The reaction layers include: a first reaction layer, which contacts with at least some of R2Fe14B type crystals, included in the magnet body, to have received the rare-earth element that has been included in the R2Fe14B type crystals; and a second reaction layer, which is located between the first reaction layer and the metal film and which has a lower rare-earth element concentration than that of the first reaction layer.

Abstract: A magnetic artificial superlattice is composed of laminated thin films including two or more kinds of magnetic flaky particles (magnetic titania nanosheets) obtained by exfoliation of a layer titanium oxide in which Ti atoms in the lattice have been substituted with magnetic elements.

Abstract: The present invention provides a security functional thin film and a security product containing such a thin film. The security functional thin film is of an amorphous structure, and possesses soft magnetic characteristics. Large Barkhausen effect can be detected along the in-plane preferred direction of magnetization; and the Large Barkhausen effect significantly attenuates, or no such signal can be detected, in a direction perpendicular to the in-plane preferred direction of magnetization. The thin film has a thickness of 20-300 nm, and the thin film also possesses element encoding characteristics that can be authenticated by experts. The security functional thin film of the present invention can be fabricated by magnetron sputtering web coating process.

Abstract: A metamaterial has a magnetic permeability response at frequencies sufficient to generate a repulsive force between a fluid and a surface to which the metamaterial may be applied. The metamaterial may be nanofabricated such that an absolute value of the magnetic permeability of the metamaterial is substantially greater than an absolute value of an electric permittivity of the metamaterial. The metamaterial may generate a repulsive force between the surface and the fluid moving relative to the surface and thereby reduce viscous drag of the fluid on the surface. A method of reducing the viscous drag of the fluid moving past the surface includes producing relative motion between the surface and the fluid and generating the repulsive force between the surface and the fluid.

Abstract: The present invention relates to forming the material represented by the following formula (1) into a layer having hexagonal crystalline structure, which is different from the orthorhombic crystalline structure of the material in bulk phase, so that the material can be used more effectively in various fields requiring multiferroic properties by obtaining multiferroic properties enhanced than the conventional multiferroic materials. RMnO3, (R=Lanthanide) . . .

Abstract: Provided is a substrate structure and a manufacturing method thereof, the substrate structure including a base substrate of single crystal; and a rhombohedral ferroelectric thin film exhibiting a spontaneous ferroelectric polarization and of a perovskite structure, the ferroelectric thin film being formed on a surface of the base substrate. The substrate structure may further include an optical waveguide formed on the ferroelectric thin film; and an electric field applying section that applies, to the optical waveguide, an electric field parallel to a surface of the base substrate. The electric field applying section generates the electric field so that the electric field direction of the electric field applied to the optical waveguide is parallel to a direction of the spontaneous ferroelectric polarization of the ferroelectric thin film.

Abstract: In a ferromagnetic material containing at least one kind of rare-earth element, a layer containing at least one kind of alkaline earth element or rare-earth element and fluorine is formed at the grain boundary or near the powder surface of the ferromagnetic material. A further layer containing at least one kind of rare-earth element, having a fluorine concentration lower than that of the layer described first and having a rare-earth element concentration higher than that of the host phase of the ferromagnetic material, or an oxide layer containing a rare-earth element is formed in adjacent with a portion of the layer described first.

Abstract: Multiferroic articles including highly resistive, strongly ferromagnetic strained thin films of BiFe0.5Mn0.5O3 (“BFMO”) on (001) strontium titanate and Nb-doped strontium titanate substrates were prepared. The films were tetragonal with high epitaxial quality and phase purity. The magnetic moment and coercivity values at room temperature were 90 emu/cc (H=3 kOe) and 274 Oe, respectively. The magnetic transition temperature was strongly enhanced up to approximately 600 K, which is approximately 500 K higher than for pure bulk BiMnO3.

Abstract: The invention relates to a read only magnetic information carrier (1b, 1c, 1d) comprising a substrate (2), an information layer (3) and a stabilizing layer (15a, 15b). The information layer (3) comprises a pattern of magnetic bits (4) of magnetic material wherein the pattern of magnetic bits (4) constitutes an array of bit locations. The presence or absence of the magnetic material at a bit location represents a value of the bit location by a magnetic field (5) having a predetermined magnetization direction (6). The stabilizing layer (15a, 15b) is arranged between the substrate (2) and the information layer (3) and comprises hard magnetic material (8, 9) which is magnetically coupled to the magnetic material of the magnetic bit (4). The magnetically coupled hard magnetic material (8, 9) provides the predetermined magnetization direction (6) of the magnetic field (5).

Abstract: An R—Fe—B sinlered magnet having on the surface thereof a vapor deposited film of aluminum or an alloy thereof and a method for producing the same. The vapor deposited film of aluminum or an alloy thereof comprises a columnar crystalline structure grown broader from the surface of the R—Fe—B sintered magnet body outward to the outer surface, which has a part within a region defined in the thickness direction of the film as taken from the surface of the R—Fe—B sintered magnet to ? of the film thickness, 5 to 30 intercrystalline gaps of 0.01 ?m to 1 ?m in width as counted per 10 ?m length in the lateral direction of the film. The method comprises controlling the average film formation rate such that it is slower up to a predetermined point and then is speeded up later thereon.

Abstract: In a ferromagnetic material containing at least one kind of rare-earth element, a layer containing at least one kind of alkaline earth element or rare-earth element and fluorine is formed at the grain boundary or near the powder surface of the ferromagnetic material. A further layer containing at least one kind of rare-earth element, having a fluorine concentration lower than that of the layer described first and having a rare-earth element concentration higher than that of the host phase of the ferromagnetic material, or an oxide layer containing a rare-earth element is formed in adjacent with a portion of the layer described first.

Abstract: An electromagnetic wave-absorption multilayer substrate has an electromagnetic wave-absorption sheet which includes a soft magnetic alloy powder and a binding agent and two insulating substrates which have facing surfaces facing the electromagnetic wave-absorption sheet and which are pressure-bonded thereto. In addition, one of the insulating substrates has a plurality of holes formed in the facing surface.

Abstract: Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a magnetic material on a substrate, wherein the magnetic material comprises rhenium, cobalt, iron and phosphorus, and annealing the magnetic material at a temperature below about 330 degrees Celsius, wherein the coercivity of the annealed magnetic material is below about 1 Oersted.

Abstract: A semiconductor device including a ferrite layer, a widebandgap semiconductor material layer, and a buffer layer. The buffer layer comprises an interweaving of MgO and BaM. In addition the buffer layer allows a gradual reduction of the interfacial stress, and mediates the strain between a silicon substrate and a ferrite layer of the device. In addition, the buffer layer allows for high crystal alignment resulting in high crystal quality and thereby producing a low microwave loss semiconductor device. The buffer layer also minimizes chemical interdiffusion of atoms between the substrate and the ferrite layer.

Abstract: A process for fabricating an antiferromagnetic layer includes depositing on a substrate a first layer with a sufficient thickness to establish a specific magnetic order from among one of the following orders, ferrimagnetic, ferromagnetic, paramagnetic, diamagnetic; after establishing the ferrimagnetic, ferromagnetic, paramagnetic or diamagnetic order, applying a magnetic field with sufficient amplitude and duration to shift walls of the magnetic domains of the first layer from a first statistical distribution to a second statistical distribution, the second statistical distribution presenting a minimum magnetic domain size strictly greater than the minimum magnetic domain size of the first statistical distribution and; for a given area, magnetic domains in which the perimeter is greater than that of domains from the first statistical distribution; and depositing on the first layer whose magnetic domain walls have been shifted, a second layer of an antiferromagnetic material in which at least one of the compon

Abstract: An electromagnetic noise suppressor of the present invention has magnetic resonance frequency of 8 GHz or higher, and the imaginary part of complex magnetic permeability at 8 GHz is higher than the imaginary part of complex magnetic permeability at 5 GHz. Such an electromagnetic noise suppressor is capable of achieving sufficient electromagnetic noise suppressing effect over the entire sub-microwave band. The electromagnetic noise suppressor can be manufactured by forming a composite layer on the surface of a binding agent through physical deposition of a magnetic material on the binding agent. The structure with an electromagnetic noise suppressing function of the present invention is a printed wiring board, a semiconductor integrated circuit or the like that is covered with the electromagnetic noise suppressor on at least a part of the surface of the structure.

Abstract: Provided is a substrate structure and a manufacturing method thereof, the substrate structure including a base substrate of single crystal; and a rhombohedral ferroelectric thin film exhibiting a spontaneous ferroelectric polarization and of a perovskite structure, the ferroelectric thin film being formed on a surface of the base substrate. The substrate structure may further include an optical waveguide formed on the ferroelectric thin film; and an electric field applying section that applies, to the optical waveguide, an electric field parallel to a surface of the base substrate. The electric field applying section generates the electric field so that the electric field direction of the electric field applied to the optical waveguide is parallel to a direction of the spontaneous ferroelectric polarization of the ferroelectric thin film.

Abstract: A laminate of a magnetic substrate comprising a high molecular compound layer and a magnetic metal thin plate wherein the volume resistivity defined in JIS H 0505 in a direction perpendicular to the high molecular compound layer surface of the laminate is less than 108 ?cm. The laminate is provided with an electrical continuity point created among magnetic metal thin plates such that the high molecular compound inside the laminate is pushed out to the outside of the laminate by pressurizing the laminate. The laminate can exhibit high thermal conductivity in order to prevent deterioration of heat releasing properties caused by low thermal conductivity when exothermic heat due to the core loss of the laminate of the magnetic substrate is released to the outside.

Abstract: In order to obtain actuator elements capable of being displaced such as expansion and contract or bending for practical use even when used as actuator elements with larger size, stacked layers or bundles in which conductive polymer-containing layers or fiber-like tubes are provided with conductive polymer composite structures which include conductive substrates and conductive polymers, said conductive substrates have deformation property, and conductivity of said conductive substrates is not less than 1.0×103 S/cm are used.

Abstract: This rare earth magnet having high strength and high electrical resistance has a structure including an R—Fe—B-based rare earth magnet particles 18 which are enclosed with a high strength and high electrical resistance composite layer 12. The high strength and high electrical resistance composite layer 12 is constituted from a glass-based layer 16 that has a structure comprising a glass phase or R oxide particles 13 dispersed in glass phase, and R oxide particle-based mixture layers 17 that are formed on both sides of the glass-based layer 16 and contain an R-rich alloy phase 14 which contains 50 atomic % or more of R in the grain boundary of the R oxide particles.

Abstract: A reader/writer comprises a circuit board, a communication control portion mounted on the circuit board and configured to perform communication with IC tags, sealing resin for sealing the communication control portion; and an antenna electrically connected to the communication control portion, in which a resin layer is disposed on the sealing resin, the resin layer having a higher adhesiveness to a conductive film used as the antenna than that of the sealing resin, and the antenna is disposed on the resin layer.

Abstract: Methods of reorienting ferromagnetic layers of a plurality of magnetoresistive elements and structures formed by the methods. The plurality of magnetoresistive elements, preferably GMR multilayer elements, are manufactured and arranged on a planar substrate. The method effectively allows selective orientation and reorientation of distinct ferromagnetic layers of a subset of the magnetoresistive elements on the substrate. The methods make either use of subsequent annealing processes making use of magnetic fields pointing in different directions. Prior to application of a subsequent annealing process, a complimentary subset of magnetoresistive elements is effectively shielded by selective deposition of a soft-magnetic shielding layer. Alternatively, a single annealing process can be performed when an externally applied magnetic field is locally modified by soft-magnetic structures, such as fluxguides.

Abstract: Certain example embodiments of this invention relate to a window having anti-fungal/anti-bacterial properties and/or self-cleaning properties, and a method of making the same. In certain example embodiments, a silver based layer is be provided and the layer(s) located thereover (e.g., the zirconium oxide inclusive layer) are designed to permit silver particles to migrate/diffuse to the surface over time to kill bacteria/germs at the surface of the coated article thereby creating an anti-bacterial/anti-fungal effect. In certain example embodiments, silver may also or instead be mixed in with other material as the top layer of the anti-bacterial coating.

Abstract: A rare-earth magnet having a protective film for enhancing a corrosion resistance is provided. The protective film is a three-layer film including a first protective layer with a crystalline structure ? (for example, a polycrystalline structure), a second protective layer with a crystalline structure ? (for example, a columnar-crystalline structure), and a third protective layer with the crystalline structure ? from the side near a magnet body. Since the adjoining first and second protective layers have different crystalline structures from each other, and the adjoining second and third protective layers have also different crystalline structures from each other, compactness among the three layers in the protective film may be improved. Therefore, development of a pinhole is restrained, and corrosion of the protective film can be restrained.

Abstract: An R—Fe—B based thin film magnet including an R—Fe—B based alloy which contains 28 to 45 percent by mass of R element (where R represents at least one type of rare-earth lanthanide elements) and which is physically formed into a film, wherein the R—Fe—B based alloy has a composite texture composed of R2Fe14B crystals having a crystal grain diameter of 0.5 to 30 ?m and R-element-rich grain boundary phases present at boundaries between the crystals. The magnetization characteristics of the thin film magnet are improved. The R—Fe—B based thin film magnet can be prepared by heating to 700° C. to 1,200° C. during physical film formation or/and the following heat treatment, so as to grow crystal grains and form R-element-rich grain boundary phases.

Abstract: An ME composite laminate of at least one (1-3) piezo-fiber layer coupled with high-permeability alloy magnetostrictive layers, optionally formed of FeBSiC or equivalent. The composite laminate alternates the (1-3) piezo-fiber and high-permeability alloy magnetostrictive layers in a stacked manner. Optionally, the magnetization direction of the high-permeability alloy magnetostrictive layers and polarization direction of the piezo-fiber layer are an (L-L) arrangement. Optionally, thin film polymer layers are between the (1-3) piezo-fiber layer and high-permeability alloy magnetostrictive layers. Optionally, piezo-electric fibers within the (1-3) piezo-fiber layer are poled by inter-digitated electrodes supported by the thin film polymer, arranged as alternating symmetric longitudinally-poled “push-pull” units.