Carbide-, Nitride-, Or Sulfide-containing Layer Patents (Class 428/698)
  • Patent number: 9297054
    Abstract: The present invention relates to a cemented carbide article comprising a core of metal carbide grains and a binder selected from cobalt, nickel, iron and alloys containing one or more of these metals and a surface layer defining an outer surface for the article, the surface layer comprising 5 to 25 weight percent of tungsten and 0.1 to 5 weight percent carbon, the balance of the surface layer comprising a metal or alloy selected from the binder metals and alloys and the surface layer being substantially free of carbide grains as determined by optical microscopy or SEM. A method for the production of a cemented carbide article is also provided.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: March 29, 2016
    Assignee: Element Six GmbH
    Inventors: Igor Yurievich Konyashin, Bernd Heinrich Ries, Christina Lachmann
  • Patent number: 9273931
    Abstract: Amorphous alloy armor made of at least one thin layer of bulk-solidifying amorphous alloys and methods of forming such armor are provided. Forming the armor in accordance with the current invention provides ruggedness, a lightweight structure, excellent resistance to chemical and environmental effects, and low-cost manufacturing.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: March 1, 2016
    Assignee: Crucible Intellectual Property, LLC
    Inventor: Gerald A. Croopnick
  • Patent number: 9254506
    Abstract: A barrier film having a substrate, a base polymer layer applied to the substrate, an oxide layer applied to the base polymer layer, and a top coat polymer layer applied to the oxide layer. An optional inorganic layer can be applied over the top coat polymer layer. The top coat polymer includes a silane and an acrylate co-deposited to form the top coat layer. The use of a silane co-deposited with an acrylate to form the top coat layer of the barrier films provide for enhanced resistance to moisture and improved peel strength adhesion of the top coat layer to the underlying barrier stack layers.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: February 9, 2016
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Mark A. Roehrig, Alan K. Nachtigal, Mark D. Weigel
  • Patent number: 9255342
    Abstract: The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm?2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: February 9, 2016
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventors: Tadao Hashimoto, Edward Letts, Sierra Hoff
  • Patent number: 9253057
    Abstract: A method and system for evaluating performance of software applications of different web sites. Steps in a first software application of a first web site are mapped to respective similar-function steps in a second software application of a second web site. The mapping for each step in the first software application includes associating both each step in the first software application and the respective similar-function step in the second software with a respective task. Measures of performance of each mapped step in the first software application and measures of performance of the respective similar-function steps and of other steps in the second software application are determined and included in a report. A measure of performance of the first software application and a measure of performance of the second software application are included in the report.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: February 2, 2016
    Assignee: International Business Machines Corporation
    Inventors: Stig A. Olsson, Terrence D. Smetanka, Geetha Vijayan
  • Patent number: 9231155
    Abstract: A composite substrate 10 includes a sapphire body 1A, a seed crystal film 4 composed of gallium nitride crystal and provided on a surface of the sapphire body, and a gallium nitride crystal layer 7 grown on the seed crystal film 4 and having a thickness of 200 ?m or smaller. Voids 5 are provided along an interface between the sapphire body 1A and the seed crystal film 4 in a void ratio of 4.5 to 12.5 percent.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: January 5, 2016
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yoshitaka Kuraoka, Makoto Iwai
  • Patent number: 9211588
    Abstract: A surface-coated cutting tool according to the present invention is a surface-coated cutting tool including a base material and a coating film formed on the base material, wherein the coating film includes at least a wear-resistant layer and an adhesion-resistant layer, the wear-resistant layer has a multilayer structure in which an A layer of a nitride containing Ti and Al as well as a B layer of a nitride containing Al and Cr are alternately stacked, and has a cubic crystal structure, and the adhesion-resistant layer is located at an outermost surface of the coating film, is composed of a nitride expressed by (AlaCrbTi1-a-b)N (wherein a+b<0.99, b>0.01, and 0.2b+0.7<a), and has a wurtzite-type crystal structure.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: December 15, 2015
    Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Makoto Setoyama, Akihiko Shibata, Yinxue Xiao, Akira Kobayashi
  • Patent number: 9196480
    Abstract: Provided is a method for treating a group III nitride substrate capable of obtaining, in the case where a group III nitride layer is laminated thereon, a group III nitride substrate that can form an electronic device having excellent characteristics. The method for treating a group III nitride substrate includes the steps of CMPing a surface of a substrate, elevating a temperature of the group III nitride substrate after the CMP process to a predetermined annealing temperature under a nitrogen gas atmosphere, and holding the group III nitride substrate whose temperature has been elevated to the annealing temperature for four minutes or more and eight minutes or less in a first mixed atmosphere of a hydrogen gas and a nitrogen gas or a second mixed atmosphere of a hydrogen gas and an ammonia gas.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: November 24, 2015
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yoshitaka Kuraoka, Tomohiko Sugiyama, Sota Maehara
  • Patent number: 9184233
    Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate of a first semiconductor material; shallow trench isolation (STI) features formed in the semiconductor substrate; and a fin-like active region of a second semiconductor material epitaxy grown on the semiconductor substrate. The first semiconductor material has a first lattice constant and the second semiconductor material has a second lattice constant different from the first lattice constant. The fin-like active region further includes fluorine species.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: November 10, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Mark van Dal
  • Patent number: 9168717
    Abstract: Solid state nanopore devices for nanopore applications and methods of manufacture are disclosed herein. The method includes forming a membrane layer on an underlying substrate. The method further includes forming a hole in the membrane layer. The method further comprises plugging the hole with a sacrificial material. The method further includes forming a membrane over the sacrificial material. The method further includes removing the sacrificial material within the hole and portions of the underlying substrate. The method further includes drilling an opening in the membrane, aligned with the hole.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: October 27, 2015
    Assignee: GLOBALFOUNDRIES U.S. 2 LLC
    Inventors: Yann Astier, Jingwei Bai, Satyavolu Papa Rao, Kathleen Reuter, Joshua T. Smith
  • Patent number: 9159821
    Abstract: A GaN device suppressing the instantaneous current reduction after the shut-off of a high frequency signal is disclosed. The GaN device provides, on a SiC substrate, an AlN layer, a GaN layer, and an AlGaN layer, The SiC substrate has an energy difference greater than 0.67 eV but less than 1.43 eV; the AlN layer has a thickness less than 50 nm; and the GaN layer has a thickness less than 1.5 ?m.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: October 13, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Ken Nakata, Keiichi Yui, Hiroyuki Ichikawa, Tsuyoshi Kouchi
  • Patent number: 9109280
    Abstract: A hard laminar coating having a first 61 m and a second film having respective different compositions and alternately laminated on a surface of a base structure, wherein the first film is a carbide, a nitride, a carboxide, a nitroxide, a carbonitride or a carbo-oxynitride of (AlaCrbBc), while the second film is TiB2, the hard laminar coating configured to include atomic ratios a, b and c in the first film satisfying a=1?b?c, 0.2?b?0.7, and 0<c?0.2, and a thickness of the first film being no less than 0.1 ?m and no more than 5.0 ?m, while a thickness of the second film being no less than 0.1 ?m and no more than 5.0 ?m, and to have a total thickness of no less than 0.2 ?m and no more than 10.0 ?m, and the hard laminar.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: August 18, 2015
    Assignee: OSG CORPORATION
    Inventors: Masatoshi Sakurai, Toshihiro Ohchi
  • Patent number: 9112096
    Abstract: The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: August 18, 2015
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Kenji Fujito, Kazumasa Kiyomi
  • Patent number: 9109290
    Abstract: A coated cutting tool includes a coating and a substrate. The substrate is at least partly coated with a 4-10 ?m thick coating comprising two adjacent Ti(C,N)-layers where the difference (?) between the residual stress state of the inner layer and the residual stress state of the outer layer is 1000 MPa???2500 MPa, on at least a part of the cutting edge and/or on at least a part of the rake face. A method to produce such a difference between the residual stress states is also disclosed.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: August 18, 2015
    Assignee: Sandvik Intellectual Property AB
    Inventors: Björn Ljungberg, Susanne Norgren
  • Patent number: 9105854
    Abstract: A method for fabricating a photovoltaic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at a weakest interface between the adhesion layer and the substrate by mechanically pulling the release tape to form a transfer substrate including the adhesion layer, the material layer and the release tape. The transfer substrate is transferred to a target substrate to contact the adhesion layer to the target substrate. The transfer substrate includes a material sensitive to formation processes of the transfer substrate such that exposure to the formation processes of the transfer substrate is avoided by the target substrate.
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: August 11, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, Tze-bin Song
  • Patent number: 9103015
    Abstract: A sliding element, in particular a piston ring, preferably made of cast iron or steel, has a coating which has a plurality of layers of CrN (14) and a-C:H:Me coatings (16) alternately. In a method for coating the sliding element, in particular a piston ring, preferably made of cast iron or steel, a plurality of layers of CrN and a-C:H:Me coatings are applied alternately.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: August 11, 2015
    Assignee: Federal-Mogul Burscheid GmbH
    Inventors: Marcus Kennedy, Michael Zinnabold
  • Patent number: 9090965
    Abstract: There is provided a slide part used in an environment where there is a lubricant containing a molybdenum compound including a hard protective layer formed on an outermost surface of a substrate of the slide part; in which: the hard protective layer includes mainly carbon, nitrogen, and a metal element; the hard protective layer is composed of a complex of an amorphous carbon body containing nitrogen and a compound crystal of the metal element; the compound crystal is composed of at least one of a metal carbide, a metal nitride, and a metal carbonitride; and a surface hardness of the hard protective layer is 1800 or larger in Vickers hardness.
    Type: Grant
    Filed: August 31, 2010
    Date of Patent: July 28, 2015
    Assignee: HITACHI METALS, LTD.
    Inventors: Itto Sugimoto, Kazutaka Okamoto, Fumiaki Honda, Kenichi Inoue
  • Patent number: 9087812
    Abstract: There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a transition body formed over a diode, the transition body including more than one semiconductor layer. The composite semiconductor device also includes a transistor formed over the transition body. The diode may be connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two.
    Type: Grant
    Filed: July 9, 2012
    Date of Patent: July 21, 2015
    Assignee: International Rectifier Corporation
    Inventor: Michael A. Briere
  • Patent number: 9074279
    Abstract: It is provided a hard laminar coating consisting of a plurality of films including two kinds of films in the form of a first film and a second film having respective different compositions and alternately laminated on a surface of a base structure, wherein the first film is an oxide or an oxynitride of (Ti1aBa), while the second film is TiB2.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: July 7, 2015
    Assignee: OSG CORPORATION
    Inventor: Takaomi Toihara
  • Patent number: 9064775
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: June 23, 2015
    Assignee: International Rectifier Corporation
    Inventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Patent number: 9034488
    Abstract: The present invention relates generally to jewelry articles comprising a substrate and a metallic, external coating.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: May 19, 2015
    Assignee: Frederick Goldman, Inc.
    Inventor: Andrew Derrig
  • Publication number: 20150132606
    Abstract: The present invention relates to an information recording medium that has good enough recording characteristics even without containing Pd. The information recording medium has a recording layer including an oxide of Mn in which Mn atoms are partially or fully present as Mn with a valence of +4.
    Type: Application
    Filed: June 3, 2013
    Publication date: May 14, 2015
    Applicant: Sony Corporation
    Inventors: Kotaro Kurokawa, Yo Ota
  • Patent number: 9028930
    Abstract: A multiple glazing comprising at least two substrates, one substrate being coated on an inner face in contact with a gas-filled cavity with a thin-film multilayer coating having reflection properties in the infrared and/or in solar radiation, said coating comprising a single metallic functional layer and two dielectric films, said films each comprising at least one dielectric layer, said functional layer being placed between the two dielectric films, characterized in that at least one dielectric film, or both dielectric films, includes an absorbent layer which is placed in the dielectric film between two dielectric layers, the absorbent material of the absorbent layer(s) being predominantly in the dielectric film subjacent to the metallic functional layer or predominantly in the dielectric film superjacent to the metallic functional layer.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: May 12, 2015
    Assignee: Saint-Gobain Glass France
    Inventors: Vincent Reymond, Hadia Gerardin, Sylvain Belliot, Veronique Rondeau, Eric Petitjean
  • Patent number: 9028954
    Abstract: The invention relates to a cutting tool comprising a main part and a multilayer coating applied thereon. A first layer A made of a hard material is applied on the main part, said hard material being selected from titanium aluminum nitride (TiAlN), titanium aluminum silicon nitride (TiAlSiN), chromium nitride (CrN), aluminum chromium nitride (AlCrN), aluminum chromium silicon nitride (AlCrSiN), and zirconium nitride (ZrN), and a second layer B made of silicon nitride (Si3N4) is applied directly over the first layer A.
    Type: Grant
    Filed: August 1, 2011
    Date of Patent: May 12, 2015
    Assignee: Walter AG
    Inventor: Veit Schier
  • Patent number: 9028960
    Abstract: A wear resistant coating suitable to be deposited on cutting tool inserts for chip forming metal machining, includes at least two layers with different grain size, but with essentially the same composition. The coating is deposited by Physical Vapor Deposition (PVD).
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: May 12, 2015
    Assignee: Seco Tools AB
    Inventors: Jacob Sjölén, Jon Andersson, Jörg Vetter, Jürgen Müller
  • Patent number: 9028953
    Abstract: CVD coated cutting tools are provided. A coated cutting tool described herein, in some embodiments, comprises a PcBN substrate and a polished coating adhered to the substrate including one or more layers of Al2O3 deposited by chemical vapor deposition, wherein the coating has a surface roughness (Ra) less than about 600 nm in an area of the cutting tool for contacting a workpiece.
    Type: Grant
    Filed: January 11, 2013
    Date of Patent: May 12, 2015
    Assignee: Kennametal Inc.
    Inventors: Frank Barry Battaglia, Crystal Jane Nestor, Peter Rudolf Leicht, Kent Lewis Reiner, Charles Graham McNerny
  • Publication number: 20150125717
    Abstract: A method and apparatus for growing truly bulk In2O3 single crystals from the melt, as well as melt-grown bulk In2O3 single crystals are disclosed. The growth method comprises a controlled decomposition of initially non-conducting In2O3 starting material (23) during heating-up of a noble metal crucible (4) containing the In2O3 starting material (23) and thus increasing electrical conductivity of the In2O3 starting material with rising temperature, which is sufficient to couple with an electromagnetic field of an induction coil (6) through the crucible wall (24) around melting point of In2O3. Such coupling leads to an electromagnetic levitation of at least a portion (23.1) of the liquid In2O3 starting material with a neck (26) formation acting as crystallization seed. During cooling down of the noble metal crucible (4) with the liquid In2O3 starting material at least one bulk In2O3 single crystal (28.1, 28.2) is formed.
    Type: Application
    Filed: April 24, 2012
    Publication date: May 7, 2015
    Applicant: FORSCHUNGSVERBUND BERLIN E.V.
    Inventors: Zbigniew Galazka, Roberto Fornari, Reinhard Uecker
  • Patent number: 9023467
    Abstract: Provided is a surface-coated cemented carbide insert obtained by containing at least WC powder and Co powder as raw materials, including a WC-based cemented carbide obtained by forming and sintering mixed raw materials containing at least any of (a) Zr compound powder, Nb compound powder, and Ta compound powder, (b) complex compound powder of Nb and Ta, and Zr compound powder, (c) complex compound powder of Nb, Ta, and Zr, (d) complex compound powder of Nb, Zr, and Ta compound powder, and (e) complex compound powder of Ta and Zr, and Nb compound powder, as essential powder components, as a substrate, and forming a hard coating layer on the substrate by vapor deposition, in which a Co enrichment surface region is formed in a substrate surface, Co content in the Co enrichment surface region satisfies to be between 1.30 and 2.10 (mass ratio) of Co content in cemented carbide.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: May 5, 2015
    Assignee: Mitsubishi Materials Corporation
    Inventors: Shin Nishida, Takeshi Ishii
  • Patent number: 9023466
    Abstract: A cutting tool insert for machining by chip removal comprising a body of a hard alloy of cemented carbide, cermet, ceramics or cubic boron nitride based material onto which a hard and wear resistant coating is deposited by CVD, and the methods of making and using the same. The coating includes at least one ?-Al2O3 layer with a thickness between 0.5 ?m and 40 ?m having a {01-15} and/or {10-15} texture exhibiting excellent wear and metal cutting performance.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: May 5, 2015
    Assignee: Seco Tools AB
    Inventors: Tommy Larsson, Mats Johansson
  • Patent number: 9023493
    Abstract: A MAX-phase material is provided for a cutting tool and other applications.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: May 5, 2015
    Inventor: L. Pierre de Rochemont
  • Publication number: 20150118487
    Abstract: The invention describes two methods for manufacturing metal dichalcogenide materials. The invention also includes a coated dichalcogenide substrate.
    Type: Application
    Filed: October 27, 2014
    Publication date: April 30, 2015
    Inventors: Colin A. Wolden, Rachel M. Morrish
  • Patent number: 9017809
    Abstract: In one aspect, cutting tools are described having coatings adhered thereto. A coated cutting tool, in some embodiments, comprises a substrate and a coating adhered to the substrate, the coating comprising at least one composite layer deposited by chemical vapor deposition comprising an aluminum oxynitride phase and a metal oxide phase, the metal oxide phase including at least one oxide of a metallic element selected from Group IVB of the Periodic Table.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: April 28, 2015
    Assignee: Kennametal Inc.
    Inventors: Volkmar Sottke, Doris Lenk, Hartmut Westphal, Hendrikus Van Den Berg, Peter Leicht, Mark Greenfield, Yixiong Liu
  • Patent number: 9017830
    Abstract: The present invention provides a shearing die having longer life and a method for manufacturing the same. The shearing die includes a pair of substrates, at least one of which has a hard film formed by an arc ion plating method and located at least on a region of a curved surface and on an adjacent region from the end part of the curved surface on the side facing to the surface of the sheet or plate material to 300 ?m along the surface of the substrate. The hard film comprises Al and one or more of Ti and Cr, and has a thickness of 1 to 5 ?m, such that a number of metal particles having a diameter of 20 ?m or more, which are present on a line segment having a length of 10 mm on a surface of the hard film, is 2 or less.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: April 28, 2015
    Assignees: Kobe Steel, Ltd., Nippon Koshuha Steel Co., Ltd.
    Inventors: Kenji Yamamoto, Yasuhiro Hayashida, Junji Yoshida
  • Publication number: 20150111063
    Abstract: This invention relates generally to an article that includes a base substrate, an intermediate layer including at least one element or compound selected from titanium, chromium, indium, zirconium, tungsten, and titanium nitride on the base substrate, and a hydrophobic coating on the base substrate, wherein the hydrophobic coating includes a rare earth element material (e.g., a rare earth oxide, a rare earth carbide, a rare earth nitride, a rare earth fluoride, and/or a rare earth boride). An exposed surface of the hydrophobic coating has a dynamic contact angle with water of at least about 90 degrees. A method of manufacturing the article includes providing the base substrate and forming an intermediate layer coating on the base substrate (e.g., through sintering or sputtering) and then forming a hydrophobic coating on the intermediate layer (e.g., through sintering or sputtering).
    Type: Application
    Filed: October 30, 2014
    Publication date: April 23, 2015
    Inventors: Sami Khan, Gisele Azimi, Adam T. Paxson, Kripa K. Varanasi
  • Patent number: 9012876
    Abstract: Germanium antimony telluride materials are described, e.g., material of the formula GexSbyTezCmNn, wherein x is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.2-0.20. One specific composition includes from 0 to 50% Sb, from 50 to 80% Te, from 20 to 50% Ge, from 3 to 20% N and from 2 to 15% carbon, wherein all atomic percentages of all components of the film total to 100 atomic %. Another specific composition includes from 10 to 50% Sb, from 50 to 80% Te, from 10 to 50% Ge, from 3 to 20% N and from 3 to 20% carbon, and wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: April 21, 2015
    Assignee: Entegris, Inc.
    Inventor: Jun-Fei Zheng
  • Patent number: 9012043
    Abstract: A medical implant device or component thereof comprising a metal substrate and a coating layer structure provided on the substrate. The coating layer structure comprises an outermost layer of a ceramic material. A bonding structure is deposited between the metal substrate and the coating layer structure. The bonding structure comprises a chromium rich layer, which is deposited onto the metal substrate surface and has a higher concentration of chromium than the metal substrate, as well as a gradient layer having a composition gradient from the chromium rich layer towards the surface of the device providing increasing proportions of a gradient material which has structural correspondence with the layer of the coating layer structure that is most adjacent to the bonding structure.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: April 21, 2015
    Assignee: Sandvik Intellectual Property AB
    Inventors: Ola Wilhelmsson, Tom Eriksson, Per Mårtensson
  • Patent number: 9006620
    Abstract: A transparent or translucent glass-ceramic plate, capable of covering or receiving at least one underlying heating element. The plate has a coating which at least partly masks the underlying heating element(s), while still allowing the heating element(s) and optional displays to be detected. At least 90% of the coating is on the face of the plate to be turned toward the heating element(s) and optional displays in the use position. The coating has a region or a group of regions known as a background region(s), wherein the background region(s) occupy most of the surface of the coating. The coating also has a region or a group of regions known as indicating region(s), wherein the indicating region(s) making it possible to display, relative to the background region(s), a pattern, a sign and/or the location of functional elements while also making it possible to detect if the elements are in operation.
    Type: Grant
    Filed: November 29, 2006
    Date of Patent: April 14, 2015
    Assignee: Eurokera S.N.C.
    Inventors: Pablo Vilato, Franck Demol
  • Patent number: 9004465
    Abstract: A helical compression spring, preferably of steel, in particular CrSi steel or CrNi steel, comprises a coating which has at least one a-C: H: Me coating or a plurality of layers of CrN (16) and a-C: H: Me coatings (14) alternately. In a method for coating a helical compression spring, preferably of steel, a plurality of layers of CrN and a-C: H: Me coatings are applied alternately.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: April 14, 2015
    Assignee: Federal-Mogul Burscheid GmbH
    Inventors: Marcus Kennedy, Han-Rainer Brillert, Michael Zinnabold
  • Patent number: 9005769
    Abstract: Substrates for joints for orthopaedic implants are described, wherein at least one of the sliding surfaces of non-ferrous metal alloys, in particular of cobalt, chromium, molybdenum alloys, has a coating consisting of niobium nitride nanolayers alternating with chromium nitride nanolayers, the lot being protected by a chromium nitride microlayer.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: April 14, 2015
    Assignee: Medacta International S.A.
    Inventors: Philippe Lambert, Alessandro Farinotti
  • Publication number: 20150099108
    Abstract: A process for producing a hard material layer on a substrate includes depositing a TiCNB hard material layer by chemical vapor deposition (CVD) from a gas system including a titanium source, a boron source, at least one nitrogen source and at least one carbon source, in which the carbon source includes an alkane having at least two carbon atoms, an alkene or an alkyne. A cutting tool includes a substrate to which a TiCNB hard material layer has been applied, in which a ratio of carbon atoms (C) to nitrogen atoms (N) in the TiCxNyB1-x-y system deposited on the substrate is 0.70?X?1.0, preferably 0.75?X?0.85, and a polished section through the substrate and the hard material layer is substantially free of an eta phase following Murakami etching.
    Type: Application
    Filed: February 25, 2013
    Publication date: April 9, 2015
    Inventor: Christoph Czettl
  • Patent number: 8999531
    Abstract: A coated cBN sintered body has excellent wear resistance, fracture resistance, adhesiveness between a substrate and a coating, and a tool life of which is elongated as compared with conventional cBN sintered bodies. The coated cBN sintered body has a cBN sintered body substrate and a coating coated on the surface thereof. The cBN sintered body includes 76 to 90% by volume of cBN, and 10 to 24% by volume of a binder phase and inevitable impurities. An average grain size of cBN is 0.5 to 5.0 ?m, an average value of the thickness of the binder phase is 0.05 to 0.8 ?m, and the standard deviation of the thickness of the binder phase is 0.8 ?m or less.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: April 7, 2015
    Assignee: Tungaloy Corporation
    Inventors: Takahide Kudoh, Naohiro Kagawa, Takashi Umemura
  • Patent number: 8999532
    Abstract: Provided is a coating layer for cutting tools, as a hard coating layer stacked and formed in the sequence of a TiN layer, a TiCN layer, a bonding layer, an alumina (Al2O3) layer, and a cover layer from the bottom by using a chemical vapor deposition (CVD) method on a parent material, able to improve cutting performance, because surface residual stress of the coating layer may be maintained in a compressive stress state by adjusting a composition of the cover layer without using a separate additional process, such as a blasting operation, or a mixed process of CVD and physical vapor deposition (PVD), and simultaneously the cover layer may also be used as a wear-resistant layer.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: April 7, 2015
    Assignee: Korloy Inc.
    Inventors: Seong Woo Cho, Han Sung Kim, Dong Youl Lee, Dae Suk Han, Young Ho Seo, Seoun Young Ahn, Dong Bok Park
  • Patent number: 8999511
    Abstract: A cBN sintered body tool has the following feature. In at least one cross sectional surface of the cBN sintered body tool taken along a plane perpendicular to a joining surface having the largest area in joining surfaces between the cBN sintered body and the joining layer, a point C and a point D are assumed to represent points away by ¼ of the length of a line segment connecting a point A and a point B shown in a figure. A value obtained when an area of a region surrounded by a line segment connecting the point C and the point D, the first cBN particle, the second cBN particle, and the binder phase is divided by the length of the line segment connecting the point A and point B to each other is 0.14-0.6 ?m.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: April 7, 2015
    Assignee: Sumitomo Electric Hardmetal Corp.
    Inventors: Yasunori Kobayashi, Satoru Kukino, Makoto Setoyama
  • Publication number: 20150079398
    Abstract: Embodiments of a layered-substrate comprising a substrate and a layer disposed thereon, wherein the layered-substrate is able to withstand fracture when assembled with a device that is dropped from a height of at least 100 cm onto a drop surface, are disclosed. The layered-substrate may exhibit a hardness of at least about 10 GPa or at least about 20 GPa. The substrate may include an amorphous substrate or a crystalline substrate. Examples of amorphous substrates include glass, which is optionally chemically strengthened. Examples of crystalline substrates include single crystal substrates (e.g. sapphire) and glass ceramics. Articles and/or devices including such layered-substrate and methods for making such devices are also disclosed.
    Type: Application
    Filed: September 10, 2014
    Publication date: March 19, 2015
    Inventors: Jaymin Amin, Alexandre Michel Mayolet, Charles Andrew Paulson, James Joseph Price, Kevin Barry Reiman
  • Patent number: 8980445
    Abstract: A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: March 17, 2015
    Assignee: Cree, Inc.
    Inventors: Robert T. Leonard, Mark Brady, Adrian Powell
  • Patent number: 8980398
    Abstract: A component which dissipates heat produced during operation thereof has a ceramic base the surface of which is covered in at least one area by a metalized coating, the ceramic base being spatially structured.
    Type: Grant
    Filed: April 17, 2008
    Date of Patent: March 17, 2015
    Assignee: CeramTee GmbH
    Inventor: Claus Peter Kluge
  • Patent number: 8980386
    Abstract: Certain example embodiments of this invention relate to articles including anticondenzation coatings that are exposed to an external environment, and/or methods of making the same. In certain example embodiments, the anticondenzation coatings may be survivable in an outside environment. The coatings also may have a sufficiently low sheet resistance and hemispherical emissivity such that the glass surface is more likely to retain heat from the interior area, thereby reducing (and sometimes completely eliminating) the presence condensation thereon. The articles of certain example embodiments may be, for example, skylights, vehicle windows or windshields, IG units, VIG units, refrigerator/freezer doors, and/or the like.
    Type: Grant
    Filed: April 25, 2013
    Date of Patent: March 17, 2015
    Assignee: Guardian Industries Corp.
    Inventors: Jean-Marc Lemmer, Nestor P. Murphy
  • Patent number: 8980446
    Abstract: The present invention concerns a method for depositing mixed crystal layers with at least two different metals on a substrate by means of PVD methods. To provide a method of depositing mixed crystal layers with at least two different metals on a substrate by means of PVD methods, which gives mixed crystal layers which are as free as possible of macroparticles (droplets) and which have a proportion as high as possible of a desired crystalline phase and which are highly crystalline, it is proposed according to the invention that deposition of the mixed crystal layer is effected with simultaneous application of i) the cathode sputtering method of dual magnetron sputtering or high power impulse magnetron sputtering and ii) arc vapour deposition.
    Type: Grant
    Filed: May 3, 2011
    Date of Patent: March 17, 2015
    Assignee: Walter AG
    Inventors: Wolfgang Engelhart, Veit Schier
  • Patent number: 8980027
    Abstract: The method comprises the steps of: forming a porous fiber-reinforcing structure; introducing into the pores of the fiber structure powders containing elements for constituting the composite material matrix; and forming at least a main fraction of the matrix from said powders by causing a reaction to take place between said powders or between at least a portion of said powders and at least one delivered additional element; the powders introduced into the fiber structure and the delivered additional element(s) comprising elements that form at least one healing discontinuous matrix phase including a boron compound and at least one discontinuous matrix phase including a crack-deflecting compound of lamellar structure. At least a main fraction of the matrix is formed by chemical reaction between the powders introduced into the fiber structure and at least one delivered additional element, or by sintering the powders.
    Type: Grant
    Filed: October 16, 2007
    Date of Patent: March 17, 2015
    Assignee: Herakles
    Inventors: René Pailler, Nicolas Eberling-Fux, Eric Philippe, Sébastien Bertrand
  • Publication number: 20150072123
    Abstract: Disclosed is a coating material for aluminum die casting and a method for coating the same, the coating material including: a CrN adhesion layer formed on a surface of a base material; a TrAlN/CrN support layer formed on a surface of the CrN adhesion layer; and a TiAl(CrSi)VCN functional layer formed on a surface of the TiAlN/CrN support layer. The present coating material solves the hot stamping and sticking problem of a conventional aluminum die casting mold and the like, enhances thermal resistance, and further has enhanced thermal resistance, high-temperature wear resistance, sticking resistance and thermal impact resistance compared to that of a conventional coating material.
    Type: Application
    Filed: December 29, 2013
    Publication date: March 12, 2015
    Applicant: HYUNDAI MOTOR COMPANY
    Inventors: Sung-Chul Cha, Seong-Jin Kim, Seong-Hoon Lee