Carbide-, Nitride-, Or Sulfide-containing Layer Patents (Class 428/698)
  • Patent number: 9670575
    Abstract: The present invention is a laminated coating film such that at least one of each of the below mentioned coating film (Q) and coating film (R) are laminated in alternation on a substrate. [Coating film Q] At least one coating film selected from the group consisting of: a coating film having a compositional formula of Ti1-a-b-cBaCbNc and satisfying the atom ratios of each element being 0.2?a?0.7, 0?b?0.35, and 0?c?0.35; a coating film having a compositional formula of Si1-d-eCdNe and satisfying the atom ratios of each element being 0.2?d?0.50 and 0?e?0.3; and a coating film having a compositional formula of B1-f-gCfNg and satisfying the atom ratios of each element being 0.03?f?0.25 and 0?g?0.5. [Coating film R] A coating film having a compositional formula of L(BxCyN1-x-y) (where L is at least one element selected from the group consisting of W, Mo, and V) and satisfying the atom ratios of each element being 0?x?0.15 and 0?y?0.5.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: June 6, 2017
    Assignee: Kobe Steel, Ltd.
    Inventors: Kenji Yamamoto, Maiko Abe, Mamoru Hosokawa
  • Patent number: 9666685
    Abstract: A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain electrode includes an ohmic contact and a Schottky contact extending from the ohmic contact toward the gate electrode, spaced apart from the gate electrode (4) by a distance (LGD), and having a length (LEXT) being not less than 2 ?m and not greater than 4 ?m. A ratio of the length (LEXT) to a sum of the length (LEXT) and a distance (LGD) is greater than 0.83 and less than 0.98.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: May 30, 2017
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Shuo-Hung Hsu, Chuan-Wei Tsou, Yi-Wei Lien
  • Patent number: 9649746
    Abstract: A cutting tool formed by a coating layer on a substrate has cutting edges that feature serrations. The linear dimensions of the serrations may vary from a few nanometers up to 10 microns. The serrations result in a smoother cut edge on the workpiece, particularly when the workpiece is formed of certain materials that are seen as particularly difficult to cut, such as hardened steels.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: May 16, 2017
    Assignee: NanoMech, Inc.
    Inventors: Ajay P. Malshe, Wenping Jiang
  • Patent number: 9623468
    Abstract: The present invention relates to a coating for high-temperature applications with tribological stress. The coating comprises a multi-layer system and a top lubrication layer, the top lubricant layer containing, as a main component, molybdenum.
    Type: Grant
    Filed: November 11, 2013
    Date of Patent: April 18, 2017
    Assignee: OERLIKON SURFACE SOLUTIONS AG, PFÄFFIKON
    Inventors: Matthias Lukas Sobiech, Jurgen Ramm
  • Patent number: 9608049
    Abstract: An organic light emitting diode (OLED) display includes a flexible substrate, a barrier layer disposed on the flexible substrate, and an organic light emitting diode disposed on the barrier layer. The barrier layer includes a plurality of metal layers and a plurality of insulation layers in which the metal layers and the insulation layers are alternatively stacked with each other on the flexible substrate.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: March 28, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Jusuck Lee
  • Patent number: 9551062
    Abstract: A tool hard film that is to be disposed as coating on a surface of a tool, the tool hard film being a TiCrMoWV oxycarbide, oxynitride, or oxycarbonitride having a phase with a NaCl-type crystal structure as a main phase, the oxycarbide, oxynitride, or oxycarbonitride having fine crystals due to introduction of oxygen.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: January 24, 2017
    Assignees: OSG CORPORATION, NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
    Inventors: Masatoshi Sakurai, Mei Wang, Toshihiro Ohchi, Yuji Sutou, Junichi Koike, Shoko Komiyama
  • Patent number: 9528180
    Abstract: The present invention relates to a coating for sliding parts that allows using diamond like carbon (DLC) or DLC-comprising coatings in combination with Molybdenum- and/or Zinc-comprising lubricants in such a manner that enhanced reduction of wear and friction in comparison to the state of the art is attained. The coating system according to the present invention comprises at least a metal-comprising carbon layer of the type Me-C/a)-C:X, whose element composition can be expressed as (MeaC1-a)1-bXb with 0.3?a?0.6 and 0<b?0.3, where Me is a metal or a combination of different metals and X is an element different from Me and different from C or X is a mixture of elements different from Me and which doesn't contain C. Me can be preferably Chromium (Cr) or Molybdenum (Mo) and X can be preferably hydrogen (H) or a mixture of silicon and hydrogen (Si+H).
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: December 27, 2016
    Assignee: OERLIKON SURFACE SOLUTIONS AG, PFAFFIKON
    Inventors: Jürgen Becker, Martin Grischke, Astrid Gies
  • Patent number: 9523145
    Abstract: A cutting tool insert having a cemented carbide substrate and a coating including a layer of NbN, wherein the cemented carbide substrate includes 11-12.5 wt % cobalt, 0.2-1.2 wt % chromium, and 86.3-88.4 wt % wolfram carbide.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: December 20, 2016
    Assignee: SECO TOOLS AB
    Inventors: Tommy Larsson, Peter Lofroth, Hanna Kallerhult, Hindrik Engstrom, Jan Qvick
  • Patent number: 9520597
    Abstract: A cathode material for a solid oxide fuel cell comprises a complex oxide having a perovskite structure expressed by the general formula ABO3, a content amount of P included in the complex oxide being at least 1 ppm and no more than 50 ppm, a content amount of Cr in the complex oxide being at least 1 ppm and no more than 500 ppm, and a content amount of B in the complex oxide being at least 1 ppm and no more than 50 ppm in a weight ratio relative to a total weight of the complex oxide.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: December 13, 2016
    Assignee: NGK INSULATORS, LTD.
    Inventors: Makoto Ohmori, Ayano Kobayashi, Shinji Fujisaki
  • Patent number: 9493871
    Abstract: A surface-coated cutting tool includes a hard coating layer vapor-deposited on a surface of a tool body, in which a composition of the hard coating layer is expressed by a composition formula of (AlxTi1-x)N (0.5?x?0.8), the average layer thickness of the hard coating layer is 0.5 ?m to 7.0 ?m, the hard coating layer is formed of crystal grains having an average grain size of 5 nm to 50 nm, the hard coating layer have a mixed structure including cubic crystal grains having a rock-salt structure, and hexagonal crystal grains having a wurtzite structure, and {200} planes of the cubic crystal grains and {11-20} planes of the hexagonal crystal grains are oriented so as to be perpendicular to the surface of the tool body.
    Type: Grant
    Filed: November 29, 2013
    Date of Patent: November 15, 2016
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Koichi Tanaka, Masakuni Takahashi
  • Patent number: 9487403
    Abstract: Provided are titanium oxynitride having a titanium deficiency-type halite structure (Ti1-xO1-yNy, wherein x and y are real numbers), in which x representing a deficiency degree of titanium is greater than 0 and less than 1, and y representing an introduction degree of nitrogen is greater than 0 and less than 1, and a method of preparing the same. The titanium oxynitride having the titanium deficiency-type halite structure with an improved photocatalyst property in the visible wavelength region may be provided.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: November 8, 2016
    Assignee: TMC Co., LTD.
    Inventors: Young Soo Lim, Won-Seon Seo
  • Patent number: 9415446
    Abstract: A coated tool with a hard coating layer, which has an excellent hardness and heat insulating effect; and exhibits an excellent chipping resistance and an excellent fracturing resistance for a long-term usage, is provided. The hard coating layer included in the coated tool has a chemically vapor deposited alternate laminated structure, which is made of: a region A layer and a region B layer, each of which is expressed by the composition formula of (Ti1-xAlx)(CyN1-y); and has the average total layer thickness of 1-10 ?m. In the region A layer, relationships, 0.70?x?0.80 and 0.0005?y?0.005, are satisfied; the average grain width W is 0.1 ?m or less; and the average grain length L is 0.1 ?m or less. In the region B layer, relationships, 0.85?x?0.95 and 0.0005?y?0.005, are satisfied; the average grain width W is 0.1-2.0 ?m; and the average grain length L is 0.5-5.0 ?m.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: August 16, 2016
    Assignee: Mitsubishi Materials Corporation
    Inventors: Sho Tatsuoka, Naoyuki Iwasaki, Kenji Yamaguchi, Akira Osada
  • Patent number: 9409823
    Abstract: This invention provides a hybrid material that exhibits strength, stiffness and ability to resist high temperatures. This hybrid material essentially consists of component A and component B. Component A is selected from the group consisting of inorganic compounds, oxides, carbides, nitrides, borides, and combinations thereof. Component B is selected from the group comprising elemental carbon, inorganic compounds, oxides, carbides, nitrides, borides, and combinations thereof. Component B comprises a plurality of units, each of the units substantially exhibiting a shape, such that this shape substantially exhibits a long dimension and a short dimension, with the short dimension being in a direction that is essentially perpendicular to the direction of the long dimension and the short dimension being in the range from 0.1 nm to 0.5 ?m. Each of the units of component B is substantially in contact with and substantially bonded to at least one of the units of component A.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: August 9, 2016
    Inventors: Deborah Duen Ling Chung, Xiaoqin Gao
  • Patent number: 9371797
    Abstract: To provide a high-thermal-conductivity piston ring having excellent scuffing resistance and wear resistance, which can be used in a high-heat-load environment in engines, a TiN coating as thick as 10-60 ?m, in which the texture coefficient of a (220) plane is 1.1-1.8 in X-ray diffraction on the coating surface, larger than those of (111) and (200) planes, is formed under the optimized ion plating conditions on a peripheral surface of the piston ring. Also, to obtain excellent sliding characteristics with low friction without losing excellent thermal conductivity of TiN, a hard amorphous carbon coating is formed on the TiN coating.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: June 21, 2016
    Assignee: KABUSHIKI KAISHA RIKEN
    Inventors: Takuma Sekiya, Yuuichi Murayama, Masayuki Sato, Yuji Shima, Junya Takahashi, Masaki Moronuki
  • Patent number: 9347559
    Abstract: A high-thermal-conductivity piston ring having excellent scuffing resistance and wear resistance, which can be used in a high-heat-load environment in engines is provided. Also, to provide a piston ring with low friction for contributing to the improvement of fuel efficiency, a TiN coating as thick as 10-60 ?m, in which the texture coefficient of a (111) plane is 1.2-1.65 in X-ray diffraction on the coating surface, with the texture coefficient of a (111) plane>the texture coefficient of a (220) plane>the texture coefficient of a (200) plane, is formed under the optimized ion plating conditions on a peripheral surface of the piston ring. Further, to obtain excellent sliding characteristics with low friction without losing excellent thermal conductivity of TiN, a hard amorphous carbon coating is formed on the TiN coating.
    Type: Grant
    Filed: June 21, 2012
    Date of Patent: May 24, 2016
    Assignee: KABUSHIKI KAISHA RIKEN
    Inventors: Takuma Sekiya, Yuuichi Murayama, Masayuki Sato, Yuji Shima, Junya Takahashi, Masaki Moronuki
  • Patent number: 9324913
    Abstract: A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 ?m.
    Type: Grant
    Filed: June 2, 2014
    Date of Patent: April 26, 2016
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Songbaek Choe, Shunji Yoshida, Toshiya Yokogawa
  • Patent number: 9309120
    Abstract: There is provided a method for efficiently producing a high-purity alkali metal nitride or alkaline earth metal nitride by simple processes. Specifically provided is a method for producing an alkali metal nitride, an alkaline earth metal nitride, or a composite thereof, the method including thermally decomposing one or more alkali metal amides or alkaline earth metal amides.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: April 12, 2016
    Assignee: TAIHEIYO CEMENT CORPORATION
    Inventors: Shoji Suzuki, Kazuhiko Tokoyoda, Tsutomu Suzuki
  • Patent number: 9297054
    Abstract: The present invention relates to a cemented carbide article comprising a core of metal carbide grains and a binder selected from cobalt, nickel, iron and alloys containing one or more of these metals and a surface layer defining an outer surface for the article, the surface layer comprising 5 to 25 weight percent of tungsten and 0.1 to 5 weight percent carbon, the balance of the surface layer comprising a metal or alloy selected from the binder metals and alloys and the surface layer being substantially free of carbide grains as determined by optical microscopy or SEM. A method for the production of a cemented carbide article is also provided.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: March 29, 2016
    Assignee: Element Six GmbH
    Inventors: Igor Yurievich Konyashin, Bernd Heinrich Ries, Christina Lachmann
  • Patent number: 9273931
    Abstract: Amorphous alloy armor made of at least one thin layer of bulk-solidifying amorphous alloys and methods of forming such armor are provided. Forming the armor in accordance with the current invention provides ruggedness, a lightweight structure, excellent resistance to chemical and environmental effects, and low-cost manufacturing.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: March 1, 2016
    Assignee: Crucible Intellectual Property, LLC
    Inventor: Gerald A. Croopnick
  • Patent number: 9254506
    Abstract: A barrier film having a substrate, a base polymer layer applied to the substrate, an oxide layer applied to the base polymer layer, and a top coat polymer layer applied to the oxide layer. An optional inorganic layer can be applied over the top coat polymer layer. The top coat polymer includes a silane and an acrylate co-deposited to form the top coat layer. The use of a silane co-deposited with an acrylate to form the top coat layer of the barrier films provide for enhanced resistance to moisture and improved peel strength adhesion of the top coat layer to the underlying barrier stack layers.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: February 9, 2016
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Mark A. Roehrig, Alan K. Nachtigal, Mark D. Weigel
  • Patent number: 9255342
    Abstract: The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm?2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: February 9, 2016
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventors: Tadao Hashimoto, Edward Letts, Sierra Hoff
  • Patent number: 9253057
    Abstract: A method and system for evaluating performance of software applications of different web sites. Steps in a first software application of a first web site are mapped to respective similar-function steps in a second software application of a second web site. The mapping for each step in the first software application includes associating both each step in the first software application and the respective similar-function step in the second software with a respective task. Measures of performance of each mapped step in the first software application and measures of performance of the respective similar-function steps and of other steps in the second software application are determined and included in a report. A measure of performance of the first software application and a measure of performance of the second software application are included in the report.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: February 2, 2016
    Assignee: International Business Machines Corporation
    Inventors: Stig A. Olsson, Terrence D. Smetanka, Geetha Vijayan
  • Patent number: 9231155
    Abstract: A composite substrate 10 includes a sapphire body 1A, a seed crystal film 4 composed of gallium nitride crystal and provided on a surface of the sapphire body, and a gallium nitride crystal layer 7 grown on the seed crystal film 4 and having a thickness of 200 ?m or smaller. Voids 5 are provided along an interface between the sapphire body 1A and the seed crystal film 4 in a void ratio of 4.5 to 12.5 percent.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: January 5, 2016
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yoshitaka Kuraoka, Makoto Iwai
  • Patent number: 9211588
    Abstract: A surface-coated cutting tool according to the present invention is a surface-coated cutting tool including a base material and a coating film formed on the base material, wherein the coating film includes at least a wear-resistant layer and an adhesion-resistant layer, the wear-resistant layer has a multilayer structure in which an A layer of a nitride containing Ti and Al as well as a B layer of a nitride containing Al and Cr are alternately stacked, and has a cubic crystal structure, and the adhesion-resistant layer is located at an outermost surface of the coating film, is composed of a nitride expressed by (AlaCrbTi1-a-b)N (wherein a+b<0.99, b>0.01, and 0.2b+0.7<a), and has a wurtzite-type crystal structure.
    Type: Grant
    Filed: June 24, 2013
    Date of Patent: December 15, 2015
    Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Makoto Setoyama, Akihiko Shibata, Yinxue Xiao, Akira Kobayashi
  • Patent number: 9196480
    Abstract: Provided is a method for treating a group III nitride substrate capable of obtaining, in the case where a group III nitride layer is laminated thereon, a group III nitride substrate that can form an electronic device having excellent characteristics. The method for treating a group III nitride substrate includes the steps of CMPing a surface of a substrate, elevating a temperature of the group III nitride substrate after the CMP process to a predetermined annealing temperature under a nitrogen gas atmosphere, and holding the group III nitride substrate whose temperature has been elevated to the annealing temperature for four minutes or more and eight minutes or less in a first mixed atmosphere of a hydrogen gas and a nitrogen gas or a second mixed atmosphere of a hydrogen gas and an ammonia gas.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: November 24, 2015
    Assignee: NGK INSULATORS, LTD.
    Inventors: Yoshitaka Kuraoka, Tomohiko Sugiyama, Sota Maehara
  • Patent number: 9184233
    Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate of a first semiconductor material; shallow trench isolation (STI) features formed in the semiconductor substrate; and a fin-like active region of a second semiconductor material epitaxy grown on the semiconductor substrate. The first semiconductor material has a first lattice constant and the second semiconductor material has a second lattice constant different from the first lattice constant. The fin-like active region further includes fluorine species.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: November 10, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Mark van Dal
  • Patent number: 9168717
    Abstract: Solid state nanopore devices for nanopore applications and methods of manufacture are disclosed herein. The method includes forming a membrane layer on an underlying substrate. The method further includes forming a hole in the membrane layer. The method further comprises plugging the hole with a sacrificial material. The method further includes forming a membrane over the sacrificial material. The method further includes removing the sacrificial material within the hole and portions of the underlying substrate. The method further includes drilling an opening in the membrane, aligned with the hole.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: October 27, 2015
    Assignee: GLOBALFOUNDRIES U.S. 2 LLC
    Inventors: Yann Astier, Jingwei Bai, Satyavolu Papa Rao, Kathleen Reuter, Joshua T. Smith
  • Patent number: 9159821
    Abstract: A GaN device suppressing the instantaneous current reduction after the shut-off of a high frequency signal is disclosed. The GaN device provides, on a SiC substrate, an AlN layer, a GaN layer, and an AlGaN layer, The SiC substrate has an energy difference greater than 0.67 eV but less than 1.43 eV; the AlN layer has a thickness less than 50 nm; and the GaN layer has a thickness less than 1.5 ?m.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: October 13, 2015
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Ken Nakata, Keiichi Yui, Hiroyuki Ichikawa, Tsuyoshi Kouchi
  • Patent number: 9109280
    Abstract: A hard laminar coating having a first 61 m and a second film having respective different compositions and alternately laminated on a surface of a base structure, wherein the first film is a carbide, a nitride, a carboxide, a nitroxide, a carbonitride or a carbo-oxynitride of (AlaCrbBc), while the second film is TiB2, the hard laminar coating configured to include atomic ratios a, b and c in the first film satisfying a=1?b?c, 0.2?b?0.7, and 0<c?0.2, and a thickness of the first film being no less than 0.1 ?m and no more than 5.0 ?m, while a thickness of the second film being no less than 0.1 ?m and no more than 5.0 ?m, and to have a total thickness of no less than 0.2 ?m and no more than 10.0 ?m, and the hard laminar.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: August 18, 2015
    Assignee: OSG CORPORATION
    Inventors: Masatoshi Sakurai, Toshihiro Ohchi
  • Patent number: 9112096
    Abstract: The method for producing a group III nitride semiconductor crystal comprises preparing a seed crystal having a non-polar plane followed by growing a group III nitride semiconductor from the non-polar plane in a vapor phase, wherein the growing includes growing the group III nitride semiconductor so as to extend in the +C-axis direction of the seed crystal. A group III-V nitride semiconductor crystal having high quality and a large-area non-polar plane can be obtained by the method.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: August 18, 2015
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Kenji Fujito, Kazumasa Kiyomi
  • Patent number: 9109290
    Abstract: A coated cutting tool includes a coating and a substrate. The substrate is at least partly coated with a 4-10 ?m thick coating comprising two adjacent Ti(C,N)-layers where the difference (?) between the residual stress state of the inner layer and the residual stress state of the outer layer is 1000 MPa???2500 MPa, on at least a part of the cutting edge and/or on at least a part of the rake face. A method to produce such a difference between the residual stress states is also disclosed.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: August 18, 2015
    Assignee: Sandvik Intellectual Property AB
    Inventors: Björn Ljungberg, Susanne Norgren
  • Patent number: 9105854
    Abstract: A method for fabricating a photovoltaic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at a weakest interface between the adhesion layer and the substrate by mechanically pulling the release tape to form a transfer substrate including the adhesion layer, the material layer and the release tape. The transfer substrate is transferred to a target substrate to contact the adhesion layer to the target substrate. The transfer substrate includes a material sensitive to formation processes of the transfer substrate such that exposure to the formation processes of the transfer substrate is avoided by the target substrate.
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: August 11, 2015
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, Tze-bin Song
  • Patent number: 9103015
    Abstract: A sliding element, in particular a piston ring, preferably made of cast iron or steel, has a coating which has a plurality of layers of CrN (14) and a-C:H:Me coatings (16) alternately. In a method for coating the sliding element, in particular a piston ring, preferably made of cast iron or steel, a plurality of layers of CrN and a-C:H:Me coatings are applied alternately.
    Type: Grant
    Filed: February 17, 2011
    Date of Patent: August 11, 2015
    Assignee: Federal-Mogul Burscheid GmbH
    Inventors: Marcus Kennedy, Michael Zinnabold
  • Patent number: 9090965
    Abstract: There is provided a slide part used in an environment where there is a lubricant containing a molybdenum compound including a hard protective layer formed on an outermost surface of a substrate of the slide part; in which: the hard protective layer includes mainly carbon, nitrogen, and a metal element; the hard protective layer is composed of a complex of an amorphous carbon body containing nitrogen and a compound crystal of the metal element; the compound crystal is composed of at least one of a metal carbide, a metal nitride, and a metal carbonitride; and a surface hardness of the hard protective layer is 1800 or larger in Vickers hardness.
    Type: Grant
    Filed: August 31, 2010
    Date of Patent: July 28, 2015
    Assignee: HITACHI METALS, LTD.
    Inventors: Itto Sugimoto, Kazutaka Okamoto, Fumiaki Honda, Kenichi Inoue
  • Patent number: 9087812
    Abstract: There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a transition body formed over a diode, the transition body including more than one semiconductor layer. The composite semiconductor device also includes a transistor formed over the transition body. The diode may be connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two.
    Type: Grant
    Filed: July 9, 2012
    Date of Patent: July 21, 2015
    Assignee: International Rectifier Corporation
    Inventor: Michael A. Briere
  • Patent number: 9074279
    Abstract: It is provided a hard laminar coating consisting of a plurality of films including two kinds of films in the form of a first film and a second film having respective different compositions and alternately laminated on a surface of a base structure, wherein the first film is an oxide or an oxynitride of (Ti1aBa), while the second film is TiB2.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: July 7, 2015
    Assignee: OSG CORPORATION
    Inventor: Takaomi Toihara
  • Patent number: 9064775
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: June 23, 2015
    Assignee: International Rectifier Corporation
    Inventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Patent number: 9034488
    Abstract: The present invention relates generally to jewelry articles comprising a substrate and a metallic, external coating.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: May 19, 2015
    Assignee: Frederick Goldman, Inc.
    Inventor: Andrew Derrig
  • Publication number: 20150132606
    Abstract: The present invention relates to an information recording medium that has good enough recording characteristics even without containing Pd. The information recording medium has a recording layer including an oxide of Mn in which Mn atoms are partially or fully present as Mn with a valence of +4.
    Type: Application
    Filed: June 3, 2013
    Publication date: May 14, 2015
    Applicant: Sony Corporation
    Inventors: Kotaro Kurokawa, Yo Ota
  • Patent number: 9028930
    Abstract: A multiple glazing comprising at least two substrates, one substrate being coated on an inner face in contact with a gas-filled cavity with a thin-film multilayer coating having reflection properties in the infrared and/or in solar radiation, said coating comprising a single metallic functional layer and two dielectric films, said films each comprising at least one dielectric layer, said functional layer being placed between the two dielectric films, characterized in that at least one dielectric film, or both dielectric films, includes an absorbent layer which is placed in the dielectric film between two dielectric layers, the absorbent material of the absorbent layer(s) being predominantly in the dielectric film subjacent to the metallic functional layer or predominantly in the dielectric film superjacent to the metallic functional layer.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: May 12, 2015
    Assignee: Saint-Gobain Glass France
    Inventors: Vincent Reymond, Hadia Gerardin, Sylvain Belliot, Veronique Rondeau, Eric Petitjean
  • Patent number: 9028954
    Abstract: The invention relates to a cutting tool comprising a main part and a multilayer coating applied thereon. A first layer A made of a hard material is applied on the main part, said hard material being selected from titanium aluminum nitride (TiAlN), titanium aluminum silicon nitride (TiAlSiN), chromium nitride (CrN), aluminum chromium nitride (AlCrN), aluminum chromium silicon nitride (AlCrSiN), and zirconium nitride (ZrN), and a second layer B made of silicon nitride (Si3N4) is applied directly over the first layer A.
    Type: Grant
    Filed: August 1, 2011
    Date of Patent: May 12, 2015
    Assignee: Walter AG
    Inventor: Veit Schier
  • Patent number: 9028960
    Abstract: A wear resistant coating suitable to be deposited on cutting tool inserts for chip forming metal machining, includes at least two layers with different grain size, but with essentially the same composition. The coating is deposited by Physical Vapor Deposition (PVD).
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: May 12, 2015
    Assignee: Seco Tools AB
    Inventors: Jacob Sjölén, Jon Andersson, Jörg Vetter, Jürgen Müller
  • Patent number: 9028953
    Abstract: CVD coated cutting tools are provided. A coated cutting tool described herein, in some embodiments, comprises a PcBN substrate and a polished coating adhered to the substrate including one or more layers of Al2O3 deposited by chemical vapor deposition, wherein the coating has a surface roughness (Ra) less than about 600 nm in an area of the cutting tool for contacting a workpiece.
    Type: Grant
    Filed: January 11, 2013
    Date of Patent: May 12, 2015
    Assignee: Kennametal Inc.
    Inventors: Frank Barry Battaglia, Crystal Jane Nestor, Peter Rudolf Leicht, Kent Lewis Reiner, Charles Graham McNerny
  • Publication number: 20150125717
    Abstract: A method and apparatus for growing truly bulk In2O3 single crystals from the melt, as well as melt-grown bulk In2O3 single crystals are disclosed. The growth method comprises a controlled decomposition of initially non-conducting In2O3 starting material (23) during heating-up of a noble metal crucible (4) containing the In2O3 starting material (23) and thus increasing electrical conductivity of the In2O3 starting material with rising temperature, which is sufficient to couple with an electromagnetic field of an induction coil (6) through the crucible wall (24) around melting point of In2O3. Such coupling leads to an electromagnetic levitation of at least a portion (23.1) of the liquid In2O3 starting material with a neck (26) formation acting as crystallization seed. During cooling down of the noble metal crucible (4) with the liquid In2O3 starting material at least one bulk In2O3 single crystal (28.1, 28.2) is formed.
    Type: Application
    Filed: April 24, 2012
    Publication date: May 7, 2015
    Applicant: FORSCHUNGSVERBUND BERLIN E.V.
    Inventors: Zbigniew Galazka, Roberto Fornari, Reinhard Uecker
  • Patent number: 9023467
    Abstract: Provided is a surface-coated cemented carbide insert obtained by containing at least WC powder and Co powder as raw materials, including a WC-based cemented carbide obtained by forming and sintering mixed raw materials containing at least any of (a) Zr compound powder, Nb compound powder, and Ta compound powder, (b) complex compound powder of Nb and Ta, and Zr compound powder, (c) complex compound powder of Nb, Ta, and Zr, (d) complex compound powder of Nb, Zr, and Ta compound powder, and (e) complex compound powder of Ta and Zr, and Nb compound powder, as essential powder components, as a substrate, and forming a hard coating layer on the substrate by vapor deposition, in which a Co enrichment surface region is formed in a substrate surface, Co content in the Co enrichment surface region satisfies to be between 1.30 and 2.10 (mass ratio) of Co content in cemented carbide.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: May 5, 2015
    Assignee: Mitsubishi Materials Corporation
    Inventors: Shin Nishida, Takeshi Ishii
  • Patent number: 9023466
    Abstract: A cutting tool insert for machining by chip removal comprising a body of a hard alloy of cemented carbide, cermet, ceramics or cubic boron nitride based material onto which a hard and wear resistant coating is deposited by CVD, and the methods of making and using the same. The coating includes at least one ?-Al2O3 layer with a thickness between 0.5 ?m and 40 ?m having a {01-15} and/or {10-15} texture exhibiting excellent wear and metal cutting performance.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: May 5, 2015
    Assignee: Seco Tools AB
    Inventors: Tommy Larsson, Mats Johansson
  • Patent number: 9023493
    Abstract: A MAX-phase material is provided for a cutting tool and other applications.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: May 5, 2015
    Inventor: L. Pierre de Rochemont
  • Publication number: 20150118487
    Abstract: The invention describes two methods for manufacturing metal dichalcogenide materials. The invention also includes a coated dichalcogenide substrate.
    Type: Application
    Filed: October 27, 2014
    Publication date: April 30, 2015
    Inventors: Colin A. Wolden, Rachel M. Morrish
  • Patent number: 9017809
    Abstract: In one aspect, cutting tools are described having coatings adhered thereto. A coated cutting tool, in some embodiments, comprises a substrate and a coating adhered to the substrate, the coating comprising at least one composite layer deposited by chemical vapor deposition comprising an aluminum oxynitride phase and a metal oxide phase, the metal oxide phase including at least one oxide of a metallic element selected from Group IVB of the Periodic Table.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: April 28, 2015
    Assignee: Kennametal Inc.
    Inventors: Volkmar Sottke, Doris Lenk, Hartmut Westphal, Hendrikus Van Den Berg, Peter Leicht, Mark Greenfield, Yixiong Liu
  • Patent number: 9017830
    Abstract: The present invention provides a shearing die having longer life and a method for manufacturing the same. The shearing die includes a pair of substrates, at least one of which has a hard film formed by an arc ion plating method and located at least on a region of a curved surface and on an adjacent region from the end part of the curved surface on the side facing to the surface of the sheet or plate material to 300 ?m along the surface of the substrate. The hard film comprises Al and one or more of Ti and Cr, and has a thickness of 1 to 5 ?m, such that a number of metal particles having a diameter of 20 ?m or more, which are present on a line segment having a length of 10 mm on a surface of the hard film, is 2 or less.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: April 28, 2015
    Assignees: Kobe Steel, Ltd., Nippon Koshuha Steel Co., Ltd.
    Inventors: Kenji Yamamoto, Yasuhiro Hayashida, Junji Yoshida