Abstract: A resin composition for laser processing which is able to enhance laser processability with maintaining a resist performance of a resin after ultraviolet laser processing, and which can be, for example, used as a resist in forming a circuit of a printed wiring board is provided. Disclosed is a resin composition for laser processing containing a resin and an ultraviolet absorber, wherein the resin is a thermoplastic resin having a carboxyl group and having a softening temperature of from 70 to 140° C., and a content of the ultraviolet absorber is from 1 to 30 parts by mass based on 100 parts by mass of the thermoplastic resin.

Abstract: Lithographic printing plates and processes for preparing the lithographic printing plates are provided. The plates have excellent printing durability, staining resistance and staining resistance over time. The lithographic printing plate precursor includes: a substrate; a photosensitive layer provided on the substrate; and an extra layer optionally provided between the substrate and the photosensitive layer. The photosensitive layer or the extra layer adjacent to the substrate contains (A) a copolymer. The copolymer (A) includes: (a1) a repeating unit of formula (a1-1) below in a side chain, and (a2) a repeating unit having at least one of the structures represented by formulae (a2-1) to (a2-6) shown in the specification in a side chain. L1, Z1, R1, and R21, R22 and R23 in formula (a1-1) and the variables in formulae (a2-1) to (a2-6) are as defined in the specification.

Abstract: The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule.

Abstract: A method for fabricating a semiconductor device is provided. In the method, a first hard mask layer is formed on a stepped structure. The first hard mask layer has a level top surface and thickness sufficient to etch the structure. A second hard mask pattern is formed on the first hard mask layer. The first hard mask layer is etched using the second hard mask pattern. Size dispersion of the patterns may be reduced by the first hard mask layer.

Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.

Abstract: The embodiments of the invention provide a polymerizable oligomer and a photoresist composition including the polymerizable oligomer, wherein the polymerizable oligomer contains a polymerizable double bond and a hydrophilic group.

Abstract: A system and method for middle layers is provided. In an embodiment the middle layer comprises a floating component in order to form a floating region along a top surface of the middle layer after the middle layer has dispersed. The floating component may be a polymer with a floating group incorporated into the polymer. The floating group may comprise a fluorine atom.

Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom. The anti-reflective layers are removed using a fluid.

Abstract: A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom.

Abstract: Single phase, water based, energy curable compositions and a method of preparing coatings and printing inks from same.

Abstract: A conductive pattern can be formed using a polymeric layer that contains a reactive composition having a reactive polymer. This reactive polymer comprises (i) a backbone, and (ii) pendant photosensitive non-aromatic unsaturated heterocyclic groups comprising an amide group that is conjugated with a carbon-carbon double bond. The non-aromatic unsaturated heterocyclic groups are linked to the backbone at an amide nitrogen atom. The reactive composition can be patternwise exposed to suitable radiation to induce crosslinking within the reactive polymer. The reactive composition and reactive polymer in the non-exposed regions can be removed due to their aqueous solubility, but the exposed regions of the polymeric layer are contacted with electroless seed metal ions, which are then reduced, followed by electrolessly plating with a suitable metal to form the desired conductive pattern. Various articles can be prepared during this process, and the product article can be incorporated into various electronic devices.

Abstract: A semiconductor device with a self-aligned contact and a method of manufacturing the same, wherein the method comprises the step of forming a 1st dielectric layer on gate structures, form a self-aligned contact trench between two gate structures, forming an 2nd dielectric layer on the 1st dielectric layer and in the self-aligned contact trench; patterning the 2nd dielectric layer into a 1st portion on the 1st dielectric layer and a 2nd portion filling in the self-aligned contact trench, using the 2nd dielectric layer as a mask to etch the 1st dielectric layer, and forming a metal layer and a self-aligned contact simultaneously in the 1st dielectric layer and in the self-aligned contact trench.

Abstract: This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions.

Abstract: A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements.

Abstract: There is provided a planarizing film-forming composition for a hard disk.

Abstract: A presensitized plate having a long press life and excellent resistance to scum and corrosive micro-stains and capable of on-press development is provided. The presensitized plate includes a photosensitive layer containing (A) a sensitizing dye, (B) a polymerization initiator, (C) a polymerizable compound, and (D) a binder polymer; and a protective layer which are formed on a support in this order. The support is prepared from an aluminum alloy plate containing intermetallic compound particles with a circle equivalent diameter of 0.2 ?m or more at a surface density of 35,000 pcs/mm2 or more and aluminum carbide particles with a maximum length of 1 ?m or more in an amount of up to 30,000 pcs/g.

Abstract: There is provided a liquid processing apparatus including a first and a second processing regions provided in a left-right direction, each for accommodating a substrate and performing a process on the substrate by a processing solution from a nozzle; a rotary body rotatable about a vertical axis; a plurality of nozzles provided at the rotary body while kept in a standby state at an outside of the processing regions, commonly used for the processing regions; a nozzle transfer device, having a nozzle holder moving back and forth, provided at the rotary body and configured to transfer a nozzle into a selected one of the processing regions while holding the selected nozzle by the nozzle holder; and a rotation driving unit configured to rotate the rotary body so as to allow a front of the nozzle holder in a forward/backward direction thereof to face the selected one of the processing regions.

Abstract: The invention comprises methods for the photolithographic patterning of features in a photo-curable polymer composition coated onto a plastic substrate. In one embodiment of this invention, the plastic substrate is coated with a reflective film such as a metallic barrier. In another embodiment, the plastic substrate is coated or co-extruded with a polymer barrier layer containing an additive that absorbs the photo-curing radiation. In yet another embodiment the plastic substrate contains an intrinsic additive that absorbs the photo-curing radiation. Combinations of these embodiments are also within the scope of this invention. The methods of the present invention may be advantageously applied to the fabrication of optical waveguides comprising a photo-curable polymer supported on a plastic substrate, but are applicable to the fabrication of any device or object comprising a photo-curable polymer supported on a plastic substrate.

Abstract: The present invention provides soluble nanogel polymers produced by polymerization of a monomer mixture comprising a monovinyl monomer, multivinyl monomer, and an iniferter. The disclosure also provides a reactive nanogel with pendant reactive groups such as oxirane or (meth)acrylate groups.

Abstract: A method of manufacturing a layer pattern of a semiconductor device, the method including forming an anti-reflective coating (ARC) layer on an etching object layer such that the ARC layer includes a polymer having an imide group; forming a photoresist pattern on the ARC layer; wet etching portions of the ARC layer exposed by the photoresist pattern to form an ARC layer pattern; and etching the etching object layer using the photoresist pattern as an etch mask to form the layer pattern.

Abstract: A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0° C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Abstract: A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

Abstract: The invention provides an infrared-sensitive positive-working image forming material which provides excellent development latitude, image formability and image region strength, and in which decrease in development property is prevented even when a certain time has passed after pattern exposure until development treatment; an infrared-sensitive positive-working planographic printing plate precursor which is formed from the image forming material and has excellent image formability and image region printing durability; and a method for manufacturing a planographic printing plate using the planographic printing plate precursor. The image forming material includes; on a support, a lower layer containing a polymer having carboxylic acid groups at side chains thereof, at least a part of the carboxylic acid groups forming a salt structure with a monovalent basic compound, and an infrared absorbing agent; and an upper layer whose solubility to aqueous alkaline solution is increased by heat, in this order.

Abstract: A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer of hydroxystyrene with acenaphthylene and/or vinylnaphthalene and a mixture of an alcohol solvent and an ether or aromatic solvent.

Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).

Abstract: A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device.

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

Abstract: A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).

Abstract: An undercoat agent usable in phase separation of a layer formed on a substrate, the layer containing a block copolymer having a plurality of polymers bonded, the undercoat agent including a resin component, and 20 mol % to 80 mol % of all the structural units of the resin component being a structural unit derived from an aromatic ring-containing monomer; and a method of forming a pattern of a layer containing a block copolymer, the method including: step (1) coating the undercoat agent on a substrate (1), thereby forming a layer (2) composed of the undercoat agent, step (2) forming a layer (3) containing a block copolymer having a plurality of polymers bonded on the surface of the layer (2) composed of the undercoat agent, and subjecting the layer (3) containing the block copolymer to phase separation, and step (3) selectively removing a phase (3a) of at least one polymer of the plurality of copolymers constituting the block copolymer from the layer (3) containing the block copolymer.

Abstract: A photoacid generator includes those of formula (I): wherein each Ra in formula 1 is independently H, F, a C1-10 nonfluorinated organic group, C1-10 fluorinated organic group, or a combination comprising at least one of the foregoing, provided at least one Ra is F or a C1-10 fluorinated organic group, the C1-10 fluorinated and nonfluorinated organic groups each optionally comprising O, S, N, or a combination comprising at least one of the foregoing heteroatoms; L1 is a linking group comprising a heteroatom comprising O, S, N, F, or a combination comprising at least one of the foregoing; G+ is an onium salt of the formula (II): wherein in formula (II), X is S or I, each R0 is independently C1-30 alkyl group; a polycyclic or monocyclic C3-30 cycloalkyl group; a polycyclic or monocyclic C4-30 aryl group; or a combination comprising at least one of the foregoing, provided at least one R0 is substituted where each R0 is a C6 monocyclic aryl group, and wherein when X is I, a is 2, and where X is S, a is 3,

Abstract: The invention provides a patterning process for forming a negative pattern by lithography, comprising at least the steps of: using a composition for forming silicon-containing film, containing specific silicon-containing compound (A) and an organic solvent (B), to form a silicon-containing film; using a silicon-free resist composition to form a photoresist film on the silicon-containing film; heat-treating the photoresist film, and subsequently exposing the photoresist film to a high energy beam; and using a developer comprising an organic solvent to dissolve an unexposed area of the photoresist film, thereby obtaining a negative pattern. There can be a patterning process, which is optimum as a patterning process of a negative resist to be formed by adopting organic solvent-based development, and a composition for forming silicon-containing film to be used in the process.

Abstract: An imageable material can be used to form a mask image for providing a relief image. This imageable material has a simplified structure and consists essentially of, in order: a transparent polymeric carrier sheet and a barrier layer comprising a first infrared radiation absorbing compound. A first ultraviolet radiation absorbing compound is provided in the transparent polymeric carrier sheet or the barrier layer. A non-silver halide thermally sensitive imageable layer is disposed on the barrier layer and comprises a second infrared radiation absorbing compound and a second ultraviolet radiation absorbing compound. A relief image is formed by imaging the imageable material to form an imaged mask material, exposing a relief-forming material with curing radiation through the imaged mask material to form exposed regions and non-exposed regions, and developing the imaged relief-forming material to form a relief image by removing its non-exposed regions.

Abstract: Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a diene/dienophile reaction product. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.

Abstract: A photoacid generator compound has formula (I): G+Z???(I) wherein G has formula (II): In formula (II), X is S or I, each R0 is commonly attached to X and is independently C1-30 alkyl; polycyclic or monocyclic C3-30 cycloalkyl; polycyclic or monocyclic C6-30 aryl; or a combination comprising at least one of the foregoing groups. G has a molecular weight greater than 263.4 g/mol, or less than 263.4 g/mol. One or more R0 groups are further attached to an adjacent R0 group, a is 2 or 3, wherein when X is I, a is 2, or when X is S, a is 2 or 3. Z in formula (I) comprises the anion of a sulfonic acid, a sulfonimide, or a sulfonamide. A photoresist and coated film also includes the photoacid generator, and a method of forming an electronic device uses the photoresist.

Abstract: In a first aspect, organic coating compositions are provided, particularly spin-on antireflective coating compositions, that contain a polyester resin component. In a further aspect, coating compositions are provided that contain a resin component obtained by polymerization of a multi-hydroxy compound. Coating compositions of the invention are particularly useful employed in combination with an overcoated photoresist layer to manufacture integrated circuits.

Abstract: There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition for lithography comprising a dextrin ester compound that at least 50% of hydroxy groups in dextrin is converted into ester groups, a crosslinking compound, and an organic solvent.

Abstract: The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1): -A-B-C-??(1) where A is a fused aromatic ring, B has a structure (2), and C is a hydroxybiphenyl of structure (3) where R1 is C1-C4alkyl and R2 is C1-C4alkyl. The invention further relates to a process for forming an image using the composition.

Abstract: The invention relates to an antireflective coating composition comprising a crosslinkable polymer, where the crosslinkable polymer comprises at least one unit of fused aromatic moiety, at least one unit with a phenylene moiety in the backbone of the polymer, and at least one hydroxybiphenyl unit, furthermore where the polymer comprises a crosslinking moiety of structure (4), where R?3, R?3 and R??3 are independently hydrogen or a C1-C4alkyl. The invention further relates to a process for forming an image using the composition.

Abstract: The present invention provides a cross-linking agent capable of preventing formation of scum from a bottom anti-reflective coating, and also provides a composition for forming a bottom anti-reflection coating containing the agent. The cross-linking agent is a nitrogen-containing aromatic compound having at least one vinyloxy group or N-methoxymethylamide group, and the composition contains the cross-linking agent. The cross-linking agent of the formula (1) can be produced by reaction of a nitrogen-containing aromatic compound, a halogen compound having a vinyloxy group or N-methoxymethylamide group and a basic compound.

Abstract: A photoacid generator compound has the formula (I): [A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)n—SO3?Z+??(I) wherein A is a substituted or unsubstituted, monocyclic, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing, R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A, each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen, L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group, Z is an organic or inorganic cation, p is an integer of 0 to 10,k is 1 or 2, m is an integer of 0 or greater, and n is an integer of 1 or greater.

Abstract: Lithographic printing plates and processes for preparing the lithographic printing plates are provided. The plates have excellent printing durability, staining resistance and staining resistance over time. The lithographic printing plate precursor includes: a substrate; a photosensitive layer provided on the substrate; and an extra layer optionally provided between the substrate and the photosensitive layer. The photosensitive layer or the extra layer adjacent to the substrate contains (A) a copolymer. The copolymer (A) includes: (a1) a repeating unit of formula (a1-1) below in a side chain, and (a2) a repeating unit having at least one of the structures represented by formulae (a2-1) to (a2-6) shown in the specification in a side chain. L1, Z1, R1, and R21, R22 and R23 in formula (a1-1) and the variables in formulae (a2-1) to (a2-6) are as defined in the specification.

Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

Abstract: Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure. The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

Abstract: A method of making a flexographic printing form precursor for laser engraving including the steps of (i) providing at least one layer of a curable composition on a substrate; (ii) curing the at least one layer; wherein the curable composition defining an outermost layer includes at least 0.5% by weight relative to the total weight of the composition of an organo-silicon compound including at least one polymerizable group; and a urethane (meth)acrylate oligomer having three or less polymerizable groups.

Abstract: A method for making a lithographic printing plate is disclosed which comprises the steps of: (1) providing a heat-sensitive lithographic printing plate precursor comprising on a support having a hydrophilic surface or which is provided with a hydrophilic layer, a heat-sensitive coating, (2) image-wise exposing said precursor with IR-radiation or heat, and (3) developing said image-wise exposed precursor with an alkaline developing solution, characterised in that a sludge inhibiting agent is present in said precursor or in said developing solution or in said precursor and said developing solution, and wherein said sludge inhibiting agent is a triazaindolisine compound. According to the above method, the formation of sludge is inhibited or reduced.

Abstract: A negative-working lithographic printing plate precursor comprises a negative-working radiation-sensitive imageable layer and an outermost layer comprising a vinyl alcohol copolymer comprising at least one unit of each of the (a), (b), and (c) recurring units, in any order, defined in the disclosure. The (c) recurring units are present in the vinyl alcohol copolymer in an amount of at least 0.5 mol %, based on the total recurring units. These precursors can be used to prepare lithographic printing plates either on-press or off-press after imaging using near-UV, visible, or infrared radiation.

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.

Abstract: In one aspect, coating compositions are provided that comprise a component a component that comprises one or more silicon, antimony, aluminum, yttrium, cerium, lanthanum, tin, titanium, zirconium, hafnium, indium or zinc compounds. In another aspect, coating compositions are provided that comprise a plurality of discrete particles. Preferred coating compositions of the invention are useful for antireflective purposes, particularly with an underlaying photoresist coating layer, as well as for a barrier layer in immersion lithography.